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2006 MRS Spring Meeting Logo2006 MRS Spring Meeting & Exhibit



April 17-21, 2006
| San Francisco
Meeting Chairs: J. Charles Barbour, Paul S. Drzaic, Gregg S. Higashi, Viola Vogel

Symposium G : Science and Technology of Nonvolatile Memories

2006-04-18   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Jan Van Houdt IMEC
Rick Carter LSI Logic
Seungbum Hong Samsung Advanced Institute of Technology
G1: Flash Memories
Session Chairs
Ko-Min Chang
Tuesday PM, April 18, 2006
Room 3010 (Moscone West)

9:30 AM - **G1.1
TwinFlash Charge Trapping Devices and Major Challenges.

Georg Tempel 1 , Thomas Mikolajick 2 , Stephan Riedel 2
1 IFD TC RM, Infineon, Dresden Germany, 2 IFD TC FL, Infineon, Dresden Germany

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10:00 AM - G1.2
NROM with Alumina as the Top Oxide in the Memory Stack.

E. Alon 1 , E. Aloni 1 , T. Claasen 5 , R. Edrei 4 , A. Gladkikh 3 , A. Fenigstein 1 , A. Heiman 1 , A. Hoffman 4 , M. Kovler 1 , I. Levin 2 , M. Lisiansky 1 , M. Oksman 3 , Y. Roizin 1 , R. Shima-Edelstein 1 , Y. Shneider 4
1 , Tower Semiconductor Ltd, Migdal HaEmek Israel, 5 , ASM Europe , Leuven Belgium, 4 , Technion - IIT, Haifa Israel, 3 Wolfson Applied Material Research Center, Tel Aviv University, Tel Aviv Israel, 2 , NIST, Gaithersburg, Maryland, United States

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10:15 AM - G1.3
Charge Trapping Characteristics of Two-layered Al2O3/SiO2 Stack for Non-volatile Memory Device.

Takashi Nakagawa 1 , Yukishige Saitoh 1 , Ayuka Morioka 1 , Hiroshi Sunamura 1 , Nobuyuki Ikarashi 1 , Makiko Oshida 1 , Shinji Fujieda 1 , Toru Tatsumi 1 , Hirohito Watanabe 1
1 system devices laboratories, NEC corporation, kanagawa Japan

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10:30 AM - G1.4
Towards a Viable high-k Interpoly Dielectric for Aggressively Scaled Floating-gate Flash Memory.

Bogdan Govoreanu 1 , David Brunco 2 , Luc Haspeslagh 1 , Joeri De Vos 1 , Daniel Ruiz Aguado 1 , Pieter Blomme 1 , Giuseppina Puzzilli 3 , Koen van der Zanden 4 , Fernanda Irrera 3 , Jan Van Houdt 1
1 , IMEC, Leuven Belgium, 2 , Intel Corp. c/o IMEC, Leuven Belgium, 3 , University of Rome "La Sapienza", Rome Italy, 4 , Infineon Technologies c/o IMEC, Leuven Belgium

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10:45 AM - G1.5
Composition-Property Relationships for New Amorphous Ultra-thin TixAl1-xOy Alloy Oxide Layers for Next Generation of CMOS and Flash Memory Gate Dielectrics

Lijuan Zhong 1 , IL-Seok Kim 1 , M. Nieto 2 , B. Kabius 1 , J. Allain 2 , A. Hassanein 2 , O. Auciello 1
1 Materials Science Division, Argonne National Lab, Argonne, Illinois, United States, 2 Energy Technology Division, Argonne National Lab, Argonne, Illinois, United States

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11:00 AM - G1
BREAK

11:30 AM - **G1.6
Technology Evolution of Semiconductor Devices for Nano Generation.

Kinam Kim 1
1 Advanced Technology Development Team, Memory Division, Samsung Electronics, Kyunggi-Do Korea (the Republic of)

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12:15 PM - G1.8
Studies of Charge Retention in Silicon Nanocrystal Layer for Memory Device Applications: Electrons or Holes?.

Tao Feng 1 , Gerald Miller 1 , Harry Atwater 1
1 , California Institute of Technology, Pasadena, California, United States

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12:30 PM - G1.9
Si-nanodot-based Multi-bit Memories Using Hybrid Structures Composed of Electron- and Hole- trap Layers.

Sangjin Park 1 , Young-Kwan Cha 1 , Daigil Cha 1 , Youngsoo Park 1 , In-Kyeong Yoo 1 , Jung-Hyun Lee 2 , Suk-Ho Choi 3
1 Nano Devices Lab, Samsung Advanced Institute of Technology, Suwon Korea (the Republic of), 2 Nano Fabrication Center, Samsung Advanced Institute of Technology, Suwon Korea (the Republic of), 3 Department of Physics and Applied Physics, Kyung Hee University, Yongin Korea (the Republic of)

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12:45 PM - G1.10
Fabrication of Dense Ordered Arrays of Metal Dots for Flash Memory Application

Davood Shahrjerdi 1 , Joy Sarkar 1 , Sanjay Banerjee 1
1 ECE, Univ of Texas at Austin, Austin, Texas, United States

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G2: Advanced Nanocrystal-Based Gate-Flash Memories
Session Chairs
Georg Tempel
Tuesday PM, April 18, 2006
Room 3010 (Moscone West)

2:30 PM - **G2.1
Silicon Nanocrystal Memory – Physics and Technology.

Ko-Min Chang 1
1 Technology Solutions Organization, Freescale Semiconductor, Inc., Austin, Texas, United States

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3:00 PM - G2.2
Germanium Implantation of Silicon Oxide for Nanocrystal Non-Volatile Memories

Jeong Han 1 , Chanjin Park 1 , Chungwoo Kim 1 , U.-I. Chung 1 , J. T. Moon 1 , B.I. Ryu 1
1 Process Development Team, Samsung Electronics Co., Ltd., Yongin, Gyeonggi, Korea (the Republic of)

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3:15 PM - G2.3
Approaches to the Self-assembling of Nanostructures for Charge Storage in Discrete Trap Memories.

Rosaria Puglisi 1 , Piero La Fata 1 , Salvatore Lombardo 1
1 Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche, Catania Italy

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3:30 PM - G2.4
Temperature Dependence of Hole Retention in Silicon Nanocrystals Embedded in SiO2

Gerald Miller 1 , Tao Feng 1 , Harry Atwater 1
1 Applied Physics, California Institute of Technology, Pasadena, California, United States

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3:45 PM - G2.5
Influence of the Ge Dose in Ion-implanted SiO2 Layers on the Related Nanocrystal-memory Properties.

Sebastien Duguay 1 , Abdelillah Slaoui 1 , Jean-Jacques Grob 1 , Philippe Kern 1
1 , InESS, STRASBOURG France

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4:00 PM - G2
BREAK

4:30 PM - G2.6
Ge Nanocrystals Grown by Pulsed Low-energy Ion-beam Assisted Deposition on SiO2 Films.

Anatoly Dvurechenskii 1 , P. Novikov 1 , Y. Khang 2 , Zh. Smagina 1 , V. Armbrister 1 , Rainer Groetzschel 3 , A. Gutakovskii 1 , V. Kesler 1
1 Siberian Branch of Russian Academy of Science, Institute of Semiconductor Physics, Novosibirsk Russian Federation, 2 , Material Center, Samsung Advanced Institute of Technology, Yongin-Si Korea (the Republic of), 3 , Institute of Ion Beam Physics and Materials Research, Research Center Rossendorf, Dresden Germany

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4:45 PM - G2.7
Core-shell Ge Nanoparticles on Oxide Surfaces for Enhanced Interface Stability.

Scott Stanley 1 , Yueran Liu 2 , Sanjay Banerjee 2 , John Ekerdt 1
1 Chemical Engineering, University of Texas Austin, Austin, Texas, United States, 2 Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas, United States

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5:00 PM - G2.8
Formation and Memory Effect of Ru Nanocrystals with High Spatial Density and Small Size Distribution by Controlling Nucleation and Growth Stage of Plasma Enhanced Atomic Layer Deposition.

Sung-Soo Yim 1 , Moon-Sang Lee 1 , Ki-Su Kim 1 , Ki-Bum Kim 1
1 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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5:15 PM - G2.9
Charge Trapping Memory Cell with TANOS (Oxide-SiN-Al2O3-TaN) Structure erased by Fowler-Nordheim tunneling of Hole

Chang-Hyun Lee 1 , Jang-Sik Lee 1 , Juhyung Kim 1 , Jaesung Sim 1 , Sanghun Jeon 1 , Yoocheol Shin 1 , Ki-Tae Park 1 , Jongsun Sel 1 , Younseok Jeong 1 , Byeongin Choi 1 , Viena Kim 1 , Wonseok Jung 1 , Chung-II Hyun 1 , Changseok Kang 1 , Jungdal Choi 1 , Kinam Kim 1
1 Semiconducor R&D Center, Samsung Electronics, Yongin-City,, Kyungki-Do, Korea (the Republic of)

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5:30 PM - G2.10
CMOS Compatible Bottom-up Approach of Multi-Dot Floating-Gate Nonvolatile Memory Fabrication.

Karl-Heinz Heinig 1 , Bernd Schmidt 1 , Torsten Mueller 3 1 , Lars Roentzsch 1 , Karl-Heinz Stegemann 2
1 Inst. of ion beam physics and materials research, Research Center Rossendorf, DRESDEN Germany, 3 Flash Technology Predevelopment, Infineon Technologies Dresden, DRESDEN Germany, 2 , ZMD Analog Mixed Signal Service Company, DRESDEN Germany

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5:45 PM - G2.11
In-situ Characterization of Surfaces and Interfaces at the Nanoscale for Application to Nonvolatile Memory Systems.

Jean Allain 1 , Lijuan Zhong 2 , Martin Nieto 1 , Vladimir Titov 1 , Ahmed Hassanein 1 , Orlando Auciello 2
1 Energy Technology Division, Argonne National Laboratory, Argonne, Illinois, United States, 2 Materials Science Division, Argonne National Laboratory, Argonne, Illinois, United States

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2006-04-19   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Jan Van Houdt IMEC
Rick Carter LSI Logic
Seungbum Hong Samsung Advanced Institute of Technology
G3: Ferroelectric Random Access Memories (FeRAMs)
Session Chairs
Seungbum Hong
Wednesday AM, April 19, 2006
Room 3010 (Moscone West)

9:30 AM - **G3.1
High Density Thin Film Ferroelectric Nonvolatile Memories.

Ramamoorthy Ramesh 1
1 , University of California, Berkeley, Berkeley, California, United States

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10:00 AM - G3.2
Ferroelectric Properties of Bi(4-x)Ce(x)Ti(3)O(12) Thin Films and Quantitative Structure – Spontaneous Polarization Relationship.

Min Ku Jeon 1 2 , Yong-Il Kim 3 , Soon-Gil Yoon 4 2 , Seong Ihl Woo 1 2
1 Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of), 2 Center for Ultramicrochemical Process Systems, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of), 3 , Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of), 4 Materials Engineering, Chungnam National University, Daejeon Korea (the Republic of)

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10:15 AM - G3.3
Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution Deposition

Sushil Singh 1 , Hiroshi Ishiwara 1
1 Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama Japan

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10:30 AM - G3.4
Novel Multiferroic Thin Films of Modified BiFeO3 for Non-Volatile Memory Applications.

Vaijayanti Palkar 1 , Anisha Ramesh 2 , Shashank Purandare 1 , Smita Gohil 1 , Richard Pinto 2 , Shobo Bhattacharya 1
1 Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, Maharashtra, India, 2 Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai, Maharashtra, India

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10:45 AM - G3.5
Electrical and Magnetic Properties of NiFe2O4 and CoFe2O4 Modified Pb(Zr,Ti)O3 Nanocomposite Thin Films.

Nora Ortega 1 , Pijush Bhattacharya 1 , Ram Katiyar 1 , Prasanta Dutta 2 , Mohindar Seehra 2
1 Physics, University of PUerto Rico, San Juan, Puerto Rico, United States, 2 Physics, West Virginia University , Morgantown, West Virginia, United States

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11:00 AM - G3
BREAK

11:30 AM - **G3.6
Status of FeRAM Technology and Commercialization as of 2006.

Carlos Paz de Araujo 1 2
1 , Symetrix Corporation, Colorado Springs, Colorado, United States, 2 Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, Colorado Springs, Colorado, United States

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12:00 PM - G3.7
Scaling Potential of pin-type 3-D SBT Ferroelectric Capacitors Integrated in 0.18μm CMOS Technology.

Ludovic Goux 1 , Dirk Wouters 1 , Judit Lisoni 1 , David Maes 1 , Hans Vander Meeren 1 , Vasile Paraschiv 1 , Luc Haspeslagh 1 , Cesare Artoni 2 , Giuseppina Corallo 2 , Raffaele Zambrano 2
1 SPDT, IMEC, Leuven Belgium, 2 Memory Products Group Stradale Primosole, STMicroelectronics, Catania Italy

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12:15 PM - G3.8
Ferroelectric Domain Dynamics in Epitaxial LaxBi1-xFeO3 Films Grown on Different Substrates.

M.P. Cruz 1 2 , F. Zavaliche 2 , Y.H. Chu 2 , T. Zhao 2 , P. Shafer 2 , M. Scullin 2 , R. Ramesh 2
1 , Centro de Ciencias de la Materia Condensada (CCMC)-UNAM, Ensenada, B.C., Mexico, 2 , University of California, Berkeley, California, United States

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12:30 PM - G3.9
Fabrication of Ferroelectric Thin Films on Crystalline HfO2/γ-Al2O3/Si(100) Substrates for MFIS-FET Applications.

Takayuki Okada 1 , Daisuke Masunaga 1 , Mikinori Ito 1 , Kazuaki Sawada 1 2 , Makoto Ishida 1 2
1 Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, Japan, 2 Intelligent Sensing System Research Center, Toyohashi University of Technology, Toyohashi, Aichi, Japan

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12:45 PM - G3.10
Simultaneous Measurement of the Piezoelectric, Dielectric and Resistive Current Response of Ferroelectric Capacitors by an Atomic Force Microscopy Based Approach.

Adrian Petraru 2 , Hermann Kohlstedt 1 2 , Valanoor Nagarajan 4 , Ramamoorthy Ramesh 5 , Darrell Schlom 3 , Kristoff Szot 2 , Rainer Waser 2
2 IFF_IEM, Institut fuer Festkoerperforschung and CNI, Forschungszentrum Juelich GmbH, Juelich Germany, 1 Advanced Light Source, LBNL , Berkeley, California, United States, 4 School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, Australia, 5 Department of Materials Science and Engineering and Department of Physics, University of California , Berkeley, California, United States, 3 Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, United States

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G4: RRAMs and Scanning Probe Memories
Session Chairs
R. Ramesh
Wednesday PM, April 19, 2006
Room 3010 (Moscone West)

2:30 PM - **G4.1
Resistance Change of NiO and its Memory Applications.

In Yoo 1
1 Nano Devices Lab, Samsung Advanced Institute of Technology, Suwon Korea (the Republic of)

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3:00 PM - G4.2
Oxygen-vacancy Mediated Resistance Switching of Perovskite Oxide Material; First-principles Study.

Sang Ho Jeon 2 , Bora Lee 1 , Bae Ho Park 2 , Seungwu Han 1
2 Department of Physics, Konkuk University, Seoul Korea (the Republic of), 1 Department of Physics, Ewha Womans University, Seoul Korea (the Republic of)

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3:15 PM - G4.3
Resistance Switching in Cr-doped SrTiO3. A Candidate for Nonvolatile Memory.

Gerhard Ingmar Meijer 1 , M. Janousch 2 , U. Staub 2 , S. F. Karg 1 , D. Widmer 1 , J. G. Bednorz 1
1 , IBM Zurich Research Laboratory, CH-8803 Rueschlikon Switzerland, 2 , Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen Switzerland

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3:30 PM - G4.4
Resistive Switching in Pt/TiO2/Pt Thin Film Capacitor – A Candidate for a Resistive Non-volatile Memory.

Doo Seok Jeong 1 , Herbert Schroeder 1
1 IEM / IFF and CNI, Forschungszentrum Juelich GmbH, Juelich Germany

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3:45 PM - G4.5
The Interfacial Layer between Pt/PCMO and the Bi-stable Resistive States

Wei Pan 1 , David Evans 1
1 , Sharp Labs of America, Camas, Washington, United States

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4:00 PM - G4
BREAK

4:30 PM - **G4.6
A Scanning-Probe Based Complete Storage System

Evangelos Eleftheriou 1
1 , IBM Zurich Research Lab, Rueschlikon Switzerland

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5:00 PM - G4.7
Transfer of Si3N4 Cantilever Array on a CMOS Circuit Using New Wafer Level Bonding Method for Probe-Based Nano Data-Storage Applications.

Il-Joo Cho 1 , Caroline Lee 1 2 , Young-Sik Kim 1 , Hyo-Jin Nam 1 , SongSoo Jang 1 , Won-Hyeog Jin 1 , Jong-Uk Bu 1 , Sun-Il Chang 3 , Euisik Yoon 3
1 Devices and Materials Lab, LG Electronics, Seoul Korea (the Republic of), 2 , Hanyang University, Seoul Korea (the Republic of), 3 , University of Minnesota, Minneapolis, Minnesota, United States

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5:15 PM - G4.8
Lead Titanate thin Films Obtained from the Reaction of a TiO2 Precursor Layer with PbO for the Application as Ferroelectric Media in High Density Probe Storage

S. Buhlmann 1 , Y. W. Nam 1 , S. Hong 1 , Y. Kim 2 , K. No 2
1 Nano Devices Lab, Samsung Advanced Institute of Technology (SAIT), Yongin-Si, Gyeonggi-Do, Korea (the Republic of), 2 Electronic and Optical Materials Lab, Korea Advanced Institute of Science and Technology (KAIST), Daejeon Korea (the Republic of)

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5:30 PM - G4.9
Effect of Pulse Parameters and Scan Speed on Domain Size in Ferroelectric Probe Storage.

Yunseok Kim 1 , Seungbum Hong 2 , Yun-Woo Nam 2 , Seung-Hyun Kim 3 , Kwangsoo No 1
1 Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of), 2 Nano Device Lab., Samsung Advanced Institute of Technology, Suwon Korea (the Republic of), 3 , Inostek Inc., Ansan-si Korea (the Republic of)

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5:45 PM - G4.10
Resistive Probe Storage: R/W Mechanism.

Seungbum Hong 1 , Hyoungsoo Ko 1 , Dong-Ki Min 1 , Juhwan Jung 1 , Yun-Woo Nam 1 , Hongsik Park 1 , Simon Buehlmann 1 , Yong Ho Seo 1 , Jong Youp Shim 1 , Chulmin Park 1 , Yunseok Kim 2 , Kwangsoo No 2 , Junsoo Kim 3 , Hyungcheol Shin 3 , Hyunjung Shin 4 , Seung-Hyun Kim 5 , In Kyeong Yoo 1
1 Nano Devices Lab, Samsung Advanced Institute of Technology, Suwon, Kyounggi, Korea (the Republic of), 2 Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejon Korea (the Republic of), 3 Nano Systems Institute and School of Electrical Engineering, Seoul National University, Seoul Korea (the Republic of), 4 Nano Materials and System Lab, Kookmin University, Seoul Korea (the Republic of), 5 , INOSTEK, Ansan Korea (the Republic of)

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G5: Poster Session: FeRAMs and Other Concepts of Non-Volatile Memories
Session Chairs
Rick Carter
Thursday AM, April 20, 2006
Salons 8-15 (Marriott)

9:00 PM - G5.1
Influence of Intermediate Layers on the Imprint of PZT Ferroelectric Capacitors

Ulrich Boettger 1
1 IWE II, RWTH Aachen, Aachen Germany

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9:00 PM - G5.10
Predictive Process Simulation of Si Nanocluster Layer Formation by Low-Energy Ion Implantation

Karl-Heinz Heinig 1 , Mueller Torsten 2 1 , Bernd Schmidt 1
1 Inst. of ion beam physics and materials research, Research Center Rossendorf, DRESDEN Germany, 2 Flash Technology Predevelopment, Infineon Technologies Dresden, DRESDEN Germany

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9:00 PM - G5.11
Combinatorial Studies for High Density Si and Ge Nanoparticle Arrays.

Scott Stanley 1 , John Ekerdt 1
1 Chemical Engineering, University of Texas Austin, Austin, Texas, United States

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9:00 PM - G5.13
New Design of Scanning Resistive Microscopy (SRM) Probe for Spatial Resolution Improvement.

Hyoungsoo Ko 1 , Seungbum Hong 1 , Hongsik Park 1 , Chulmin Park 1 , Ding-Ki Min 1 , Yongho Seo 1 , Jongyoup Shim 1 , Yunwoo Nam 1 , Simon Buhlmann 1 , Juhwan Jung 1 , Inkyung Yoo 1
1 Nano Device Lab, Samsung Advanced Institute of Technology, Yongin-Si, Kyunggi-Do, Korea (the Republic of)

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9:00 PM - G5.14
Effect of Oxygen Stoichiometry on Resistive Switching Characteristics of Pr0.7Ca0.3MnO3 Thin Films Grown by Pulsed Laser Deposition.

Young-Hwan Kim 1 , Dong-Soo Kim 1 2 , Sung-Mok Jung 1 3 , Seong-Il Kim 1 , Yong Tae Kim 1
1 Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 2 Department of Physics, Korea University, Seoul Korea (the Republic of), 3 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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9:00 PM - G5.15
Co/Ru Sandwich Stacks Fabricated for MRAMs by ALD.

Eun Ho Kim 1 , Y. J. Kong 1 , D. H. Lee 1 , H. S. Kim 1 , S. J. Noh 1 , Yongmin Kim 1
1 Applied Physics, Dankook University, Seoul Korea (the Republic of)

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9:00 PM - G5.16
Mechanism of Resistive Memory Switching in NiO Thin Films.

Jung Bin Yun 1 , Hyunjung Shin 1 , Sunae Seo 2 , Myoung-Jae Lee 2 , Seung-Eon Ahn 2 , Dong-Chul Kim 2 , In-Kyeoug Yoo 2
1 School of Advanced Materials Engineering, kookmin university, seoul Korea (the Republic of), 2 Nano Devices Lab, Samsung Advanced Inst. of Technology, Kyeonggi-do Korea (the Republic of)

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9:00 PM - G5.2
Effect Of Plt Buffer Layers With Different Lanthanum Concentration On The Pzt Thin Films For Fram Applications.

Li Dong Hua 1 , Lee Sang Yeol 1
1 Electrical and Electronic Engineering, Yonsei University , Seoul Korea (the Republic of)

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9:00 PM - G5.4
Growth of BiFeO3 Thin Films by Radiofrequency Beam Assisted Laser Ablation.

Maria Dinescu 1 , Mitoseriu Liliana 2 , Ianculescu Adelina -Carmen 3 , Dinescu Gheorghe 1 , Constantinescu Catalin 1 , Moldovan Antoniu 1 , Birjega Ruxandra 1
1 , NILPRP, Bucharest Romania, 2 , University Al. I. Cuza, Iasi Romania, 3 , Polytehnica University, Bucharest Romania

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9:00 PM - G5.5
Electrical Properties of Ferroelectric Thin Films on the sol-gel Derived LaNiO3 Bottom Electrode.

Pei-Ying Lai 1 , Yi-Sheng Lai 1 , Jen-Sue Chen 1
1 Department of Materials Science and Engineering, National Cheng Kung University, Tainan Taiwan

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9:00 PM - G5.6
Electrical Characteristics of Ferroelectric Field Effect Transistors (FeFETs) Incorporating Langmuir-Blodgett Films of a Vinylidene Fluoride Ferroelectric Copolymer.

Andreas Gerber 2 , Hermann Kohlstedt 2 1 , Michael Fitsilis 2 , Rainer Waser 2 , Timothy Reece 3 , Stephen Ducharme 3 , E. Rije 4 , Juergen Schubert 4
2 Research Center Juelich, Institute of Solid State Research (IFF), and CNI Center of Nanoelectronic Systems for Information Technology, Juelich Germany, 1 Lawrence Berlekely National Laboratory, Advanced Light Source, Berkeley, California, United States, 3 University of Nebraska, Lincoln, Department of Physics and Astronomy, Center for Materials, Lincoln, Nebraska, United States, 4 Research Center Juelich, Institute for Thin Films and Interfaces (ISG 1), and CNI Center of Nanoelectronic Systems for Information Technology, Pittsburgh, Pennsylvania, United States

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9:00 PM - G5.7
Electrode Influence on the Transport Through Metal-insulator-oxide Conductor Junctions.

Hwan-Soo Lee 1 , Sukwon Choi 2 , Paul Salvador 2 , James Bain 1
1 Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States, 2 Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States

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9:00 PM - G5.9
Data Storage and Retention in a Polymer-Based Non-Volatile Ferroelectric Capacitor.

Timothy Reece 1 , Andreas Gerber 2 , Chris Othon 1 , Hermann Kohlstedt 2 , Stephen Ducharme 1
1 Department of Physics and Astronomy, Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska, United States, 2 Institute of Solid State Research (IFF) and CNI-Center of Nanoelectronic Systems for Information Technology, Juelich Research Center, Juelich Germany

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2006-04-20   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Jan Van Houdt IMEC
Rick Carter LSI Logic
Seungbum Hong Samsung Advanced Institute of Technology
G6/H5: Joint Session: Phase Change Memories I
Session Chairs
Stephen Hudgens
Jon Maimon
Thursday AM, April 20, 2006
Room 3010 (Moscone West)

9:00 AM - **G6.1/H5.1
OUM Nonvolatile Semiconductor Memory Technology Overview

Stephen Hudgens 1
1 , Ovonyx, Inc., Sunnyvale, California, United States

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9:30 AM - G6.2/H5.2
Thermal Analysis and Structural Design of Phase Change Random Access Memory.

Rong Zhao 1 , Ler Ming Lim 1 , Luping Shi 1 , Hock Koon Lee 1 , Hongxin Yang 1 , Tow Chong Chong 1
1 , Data Storage Institute, Singapore Singapore

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9:45 AM - G6.3/H5.3
On the Kinetic Characteristics of the Set Process in a Non-volatile Phase-change Memory.

Dae-Hwan Kang 1 , Byung-ki Cheong 1 , Jeung-hyun Jeong 1 , Taek Lee 1 , In Kim 1 , Won Kim 1 , Ki-Bum Kim 2
1 Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 2 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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10:00 AM - G6.4/H5.4
Multi-level Operation in Multi-layered Structure of Ge2Sb2Te5 and TiN.

Hyun-Goo Jun 1 , Dong-Ho Ahn 1 , Tae-Yon Lee 2 , Dongbok Lee 1 , Ki-Bum Kim 1
1 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 Nano Systems Institute - National Core Research Center, Seoul National University, Seoul Korea (the Republic of)

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10:15 AM - G6.5/H5.5
Investigation on Ultra-high Density and High Speed Non-volatile Phase Change Random Access Memory (PCRAM) by Material Engineering.

E.G. Yeo 1 , L.P. Shi 1 , R Zhao 1 , T.C. Chong 1
1 , Data Storage Institute, Singapore Singapore

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10:30 AM - G6/H5
BREAK

11:00 AM - **G6.6/H5.6
Modeling Considerations for Phase Change Electronic Memory Devices.

Guy Wicker 1
1 , Ovonyx, Inc., Rochester Hills, Michigan, United States

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11:30 AM - G6.7/H5.7
An Analysis of the Operation Characteristics of PRAM and Development of a New Multi–bit Structure through 3-D Transient Simulation Modeling.

YoungWook Park 1 , Kyung-Woo Yi 1
1 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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11:45 AM - G6.8/H5.8
Thermal Conductivity of Phase Change Material Ge2Sb2Te5

Ho-Ki Lyeo 1 2 , David Cahill 1 2 , Min-Ho Kwon 5 2 , Bong-Sub Lee 1 3 , John Abelson 1 3 , Stephen Bishop 3 4 , Ki-Bum Kim 5 , Byung-ki Cheong 6
1 Materials Science and Engineering, University of Illinois, Urbana, Illinois, United States, 2 Frederick-Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois, United States, 5 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 3 The Coordinated Sciences Laboratory, University of Illinois, Urbana, Illinois, United States, 4 Electrical & Computer Engineering, University of Illinois, Urbana, Illinois, United States, 6 Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of)

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12:00 PM - G6.9/H5.9
Investigation on the Enhanced Switching Reliability of a Phase Change Memory Device with an Oxidized TiN Electrode.

Dae-Hwan Kang 1 , In Kim 1 , Jeung-hyun Jeong 1 , Byung-ki Cheong 1 , Dong-Ho Ahn 2 , Dongbok Lee 2 , Hyun-Mi Kim 2 , Ki-Bum Kim 2
1 Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 2 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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12:15 PM - G6.10/H5.10
Formation of the Ultra Small Programming Volume of Phase Change Random Access Memory by Phase Segregation of Ge2Sb2Te5-SiO2 Mixed Layer.

Tae-Yon Lee 1 , Dongbok Lee 2 , Dong-Ho Ahn 2 , Hyungoo Jun 2 , Ki-Bum Kim 1 2
1 Nano Systems Institute - National Core Research Center, Seoul National University, Seoul Korea (the Republic of), 2 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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12:30 PM - G6.11/H5.11
Oxygen Contamination in Sb2Te3.

John Boyd 1 , Arthur Edwards 1
1 Electronics Foundations Group, AF Research Lab Space Vehicles Directorate, Albuquerque, New Mexico, United States

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12:45 PM - G6/H5
Poster Resume

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G7/H6: Joint Session: Phase Change Memories II
Session Chairs
Stephen Hudgens
Thursday PM, April 20, 2006
Room 3010 (Moscone West)

2:30 PM - **G7.1/H6.1
Localized Light Focusing and Super Resolution by Chalcogen Thin Film.

Junji Tominaga 1 , Paul Fons 1 , Alexander Kolobov 2 1
1 Center for Applied Near-Field Optics Research, National Institute of Advanced Industrial Science and Technology, Tsukuba Japan, 2 Laboratoire de Physicochimie la Matiere Condensee, University of Montpellier, Montpellier France

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3:00 PM - G7.2/H6.2
Impact of Material Crystallization Characteristics on the Switching Behavior of the Phase Change Memory Cell.

Thomas Gille 1 2 , Ludovic Goux 1 , Judit Lisoni 1 , Kristin De Meyer 1 2 , Dirk Wouters 1
1 , IMEC, Leuven Belgium, 2 ESAT, KU Leuven, Leuven Belgium

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3:15 PM - G7.3/H6.3
Kinetics of Optically-induced Crystallization and Structure of Ag-Sb-S Chalcogenide Films and its Potential Application.

Tomas Wagner 1 , Jan Gutwirth 1 , Milos Krbal 1 , Tomas Kohoutek 1 , Miloslav Frumar 1 , Petr Bezdicka 2 , Jan Pokorny 3
1 , University of Pardubice, Pardubice Czech Republic, 2 , Institute of Inorganic Chemistry, ASCR, , Rez u Prahy, 25068 Czech Republic, 3 , Department of Dielectrics, Institute of Physics, ASCR, , Praha, 18221 Czech Republic

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3:30 PM - G7.4/H6.4
Phase-Change Dynamics of Eutectic GeSb Alloy.

Robert Shelby 1 2 , Martin Salinga 3 1 2 , Frances Houle 1 2 , Simone Raoux 1 2
1 , IBM Almaden Research Center, San Jose, California, United States, 2 IBM/Infineon/Macronix PCRAM Joint Project, IBM Almaden Research Center, San Jose, California, United States, 3 , Physikalisches Institut 1A der RWTH Aachen, Aachen Germany

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3:45 PM - G7.5/H6.5
Effect of Doping on the Properties of the Phase Change Materials SbTe and GeSb.

Simone Raoux 1 , Martin Salinga 1 2 , Jean Jordan-Sweet 3 , Qing Wang 1 4
1 IBM/Infineon Technologies/Macronix PCRAM Joint Project, IBM Almaden Research Center, San Jose, California, United States, 2 1. Physikalisches Institut 1A, RWTH Aachen, Aachen Germany, 3 IBM/Infineon Technologies/Macronix PCRAM Joint Project, IBM T. J. Watson Research Center, Yorktown Heights, New York, United States, 4 , San Jose State University, San Jose, California, United States

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4:00 PM - G7/H6
BREAK

4:30 PM - G7.6/H6.6
A Study on the Phase Transformation Behavior and Microstructures of N-doped Ge2Sb2+xTe5 Thin Films for the Application to Phase Change Memory Devices

Kihoon Do 1 , Byung ho Lee 1 , Jaesuk Kwon 1 , Dae-hong Ko 1
1 Ceramic Engineering, Yonsei University , Seoul Korea (the Republic of)

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4:45 PM - G7.7/H6.7
Nitrogen Incorporation in Ge2Sb2Te5 Films by N2+ Ion Implantation

YoungKuk Kim 2 1 , S. A. Park 1 , E. J. Jeong 3 , M.-H. Cho 1 , D. -H. Ko 3 , K. Jeong 2
2 IPAP, Yonsei University, Seoul Korea (the Republic of), 1 Nano Surface Group, korea Research Institute of Standards and Science, Daejeon Korea (the Republic of), 3 Dep. of Ceramic Engineering, Yonsei University, Seoul Korea (the Republic of)

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5:00 PM - G7.8/H6.8
InGeSbTe Compounds as a New Phase Change Material for Low-power Operation of High Density PRAM.

Jin-Seo Noh 1 , Kijoon Kim 1 , Dong-Seok Suh 1 , Woong-Chul Shin 1 , Sang Mock Lee 1 , Eunhye Lee 1 , Hyo-Jeong Kim 1 , Youn-Seon Kang 1 , Yoonho Khang 1
1 Materials Center, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do Korea (the Republic of)

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5:15 PM - G7.9/H6.9
Operating Current Reduction in Phase Change RAM by using Ge2Sb2Te5 nanoparticles

Eunhye Lee 1 , Dong-Seok Suh 1 , Kijoon Kim 1 , Jin-Seo Noh 1 , Woong-Chul Shin 1 , Hyo-Jeong Kim 1 , Youn-Seon Kang 1 , Yoonho Khang 1
1 Materials Center, Samsung Advanced Institute of Technology, Yongin-si Korea (the Republic of)

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5:30 PM - *
Poster Resumes

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G8/H7: Joint Poster Session: Phase Change Materials: Processing, Characterization, and Devices
Session Chairs
Orlando Auciello
Friday AM, April 21, 2006
Salons 8-15 (Marriott)

9:00 PM - G8.1/H7.1
Ag-Sb-S Thin Films Prepared by RF Magnetron Sputtering and Their Properties.

Jan Gutwirth 1 , Tomas Wagner 1 , Petr Bezdicka 2 , Cestmir Drasar 3 , Miloslav Frumar 1 , Milan Vlcek 4
1 , University of Pardubice, Pardubice Czech Republic, 2 , Institute of Inorganic Chemistry, AS CR, , 25068 Rez near Prague Czech Republic, 3 , University of Pardubice, Department of Physics, , 53210 Pardubice Czech Republic, 4 , Joint Laboratory of Solid State Chemistry of University of Pardubice and Institute of Macromolecular Chemistry AS CR, 53210 Pardubice Czech Republic

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9:00 PM - G8.10/H7.10
Preparation of Ge2Sb2Te5 thin film for Phase Change Random Access Memory by RF magnetron Sputtering and DC Magnetron Sputtering.

Shin Kikuchi 1 , Dong Oh 1 , Isao Kimura 1 , Yutaka Nishioka 1 , Koukou Suu 1
1 Institute for Semiconductor Technologies, ULVAC,Inc., Susono, Shizuoka, Japan

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9:00 PM - G8.11/H7.11
Stack-Structured Phase Change Memory Cell for Multi-State Storage

Sangouk Ryu 1 , Kyujeong Choi 1 , Sungmin Yoon 1 , Namyeal Lee 1 , Seungyun Lee 1 , Youngsam Park 1 , Byoung-gon Yu 1
1 , Electronics and Telecommunications Research Institute, Daejeon Korea (the Republic of)

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9:00 PM - G8.12/H7.12
Crystallization Kinetics of Phase Change Materials

Shan Liu 1
1 Materials and Engineering Physics Program, Ames Laboratory, Ames, Iowa, United States

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9:00 PM - G8.13/H7.13
A SiTiNx Heating/Barrier Layer for Phase-Change RAMs.

Huai-Yu Cheng 1 , Tsung-Shune Chin 1 , Chain-Ming Lee 2 , Yi-Chen Chen 2
1 Department of Materials Science and Engineering, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan, 2 Electronic Research and Service Organization, Industrial Technology Research Institute, Chu-Tung Taiwan

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9:00 PM - G8.14/H7.14
Effect of Thermal and Intrinsic Stresses on the Mechanical Failure of Ge2Sb2Te5 Films.

Il-Mok Park 1 , Young-Chang Joo 1 , Jung-Kyu Jung 1
1 Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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9:00 PM - G8.15/H7.15
Characterization of Ge2Sb2Te5 Grown by the Method of an Ion Beam Sputtering Deposition.

YoungKuk Kim 2 1 , S. A. Park 1 , E. J. Jeong 3 , M. -H. Cho 1 , D. -H. Ko 3 , K. Jeong 2
2 IPAP, Yonsei University, Seoul Korea (the Republic of), 1 Nano Surface Group, korea Research Institute of Standards and Science, Daejeon Korea (the Republic of), 3 Dep. of Ceramic Engineering, Yonsei University, Seoul Korea (the Republic of)

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9:00 PM - G8.2/H7.2
Phase Transition Characteristics of Sb-based Phase Change Materials for PRAM Application.

Tae Jin Park 1 , M. J. Kang 1 , S. Y. Choi 1 , S. M. Yoon 2 , B. G. Yu 2
1 Department of Material Science and Engineering, Yonsei University, Seoul Korea (the Republic of), 2 , ETRI, Deajeon Korea (the Republic of)

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9:00 PM - G8.3/H7.3
Electrochemically-Deposited Bi2S3 and Pb3xBi2(1-x)S3 Nanowires.

Jana Sommerlatte 1 2 , Woo Lee 1 , Roland Scholz 1 , Ulrich Goesele 1 , Klaus Bente 2 , Kornelius Nielsch 1
1 , Max Planck Institute of Microstructure Physics, Halle Germany, 2 Institute of Mineralogy, University of Leipzig, Leipzig Germany

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9:00 PM - G8.4/H7.4
Effect of Heavy Ion Irradiation on the Optical Properties of a-Se85Te15 Thin Film.

Vineet Sharma 1 , Virendra Singh 2 , Anup Thakur 3 , Jeewan Sharma 3 , S Tripathi 3
1 Physics, Jaypee University of Information Technology , Waknaghat, HP, India, 2 Chemistry, Panjab University Chandigarh, Chandigarh India, 3 Physics, Panjab University , Chandigarh, Chandigarh, India

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9:00 PM - G8.5/H7.5
In Situ Transmission Electron Microscopy Study of the Structural Transformation in Ge2Sb2Te5 Thin Films.

Yu Jin Park 1 , Jeong Yong Lee 1 , Yong Tae Kim 2
1 Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of), 2 Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul Korea (the Republic of)

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