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2008 MRS Spring Meeting & Exhibit

March 24-28, 2008 | San Francisco
Meeting Chairs: Jeffrey C. Gelpey, Robert J. Hamers, Paul Muralt, Christine A. Orme

Symposium D : Silicon Carbide---Materials, Processing, and Devices

2008-03-25   Show All Abstracts

Symposium Organizers

Michael Dudley State University of New York-Stony Brook
C. Mark Johnson University of Nottingham
Adrian Powell Cree, Inc.
Sei-Hyung Ryu Wayne State University

Symposium Support

Cree Inc
Sula Technologies
D1: Bulk Growth
Session Chairs
Michael Dudley
Tuesday PM, March 25, 2008
Room 2004 (Moscone West)

9:30 AM - **D1.1
Bulk Growth of SiC.

Peter Wellmann 1 , Sakwe Aloysius Sakwe 1 , Philip Hens 1 , Matthias Stockmeier 2 , Katja Konias 2 , Rainer Hock 2 , Andreas Magerl 2 , Michel Pons 3 , Mikael Syväjärvi 4 , Rositza Yakimova 4
1 Materials Department 6, University of Erlangen, Erlangen Germany, 2 Physics, University of Erlangen, Erlangen Germany, 3 LTPCM, Institut National Polytechnique, Grenoble France, 4 Physics, University of Linkoeping, Linkoeping Sweden

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10:00 AM - D1.2
Unseeded Sublimation Growth of High Quality 3C-SiC Single Crystals.

Didier Chaussende 1 , Irina-Georgiana Galben 1 , Jessica Eid 1 , Michel Pons 2
1 LMGP, CNRS - Grenoble INP, Grenoble France, 2 SIMAP, CNRS - Grenoble INP - UJF, Saint-Martin d'Hères France

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10:30 AM - **D1.4
Influence of Crystal Growth Conditions on Nitrogen Incorporation During PVT Growth of SiC.

Darren Hansen 1 , Roman Drachev 1 , Seung-ho Park 1 , Mark Loboda 1
1 , Dow Corning Compound Semiconductor Solutions, Auburn, Michigan, United States

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11:00 AM - D1: Bulk
BREAK

2008-03-26   Show All Abstracts

Symposium Organizers

Michael Dudley State University of New York-Stony Brook
C. Mark Johnson University of Nottingham
Adrian Powell Cree, Inc.
Sei-Hyung Ryu Wayne State University
D6: Deep Level Defects and Carrier Lifetime
Session Chairs
P. Bergman
Wednesday AM, March 26, 2008
Room 2004 (Moscone West)

11:30 AM - **D6.1
Deep Levels and Lifetime-Killing Defects in 4H-SiC Epilayers.

Tsunenobu Kimoto 1 2 , Katsunori Danno 1
1 Electronic Science & Engineering, Kyoto University, Kyoto Japan, 2 Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto Japan

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12:00 PM - D6.2
Comparison of Deep Levels and Injected Carrier Lifetimes of 4° and 8° off-axis 4H-SiC Epitaxial Layers.

Rachael Myers-Ward 1 , Kok-Keong Lew 1 , Brenda VanMil 1 , Paul Klein 2 , Evan Glaser 2 , Charles Eddy 1 , Kurt Gaskill 1
1 Code 6882, Naval Research Laboratory, Washington , District of Columbia, United States, 2 Code 6877, Naval Research Laboratory, Washington , District of Columbia, United States

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12:15 PM - **D6.3
Mapping Point and Extended Defects in Wide Bandgap Substrates, Epitaxial Films, and Device structures by Luminescence Techniques.

Jaime Freitas 1 , M. Murthy 2 , S. Maximenko 1 , P. Klein 1 , J. Caldwell 1 , O. Glembocki 1 , Y. Chen 3 , R. Balaji 3 , M. Dudley 3 , B. Vanmil 1 , R. Myers-Ward 1 , D. Gaskill 1 , C. Eddy 1 , G. Chung 4 , M. Laboda 4
1 ESTD, Naval Research Laboratory, Washington, District of Columbia, United States, 2 Department of ECE, George Mason University, Fairfax, Virginia, United States, 3 Department of MSE, Stony Brook University, Stony Brook , New York, United States, 4 , Dow Corning Compound Semiconductors Solutions, Midland, Michigan, United States

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2008-03-27   Show All Abstracts

Symposium Organizers

Michael Dudley State University of New York-Stony Brook
C. Mark Johnson University of Nottingham
Adrian Powell Cree, Inc.
Sei-Hyung Ryu Wayne State University
D10: Devices I
Session Chairs
Lin Cheng
Thursday AM, March 27, 2008
Room 2004 (Moscone West)

9:30 AM - **D10.1
Considerations on Bipolar Power Devices.

Wolfgang Bartsch 1
1 , SiCED GmbH & Co. KG, Erlangen Germany

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10:00 AM - D10.2
Design and Fabrication of High-Voltage N-channel DMOS IGBTs on 4H-SiC Free-standing Epilayers.

Xiaokun Wang 1 , James Cooper 1
1 School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, United States

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10:15 AM - D10.3
Power Device Degradation due to Dislocations and Stacking Faults in 4H-SiC Epitaxy.

Robert Stahlbush 1 , Sei-Hyung Ryu 2 , Qingchun Zhang 2 , Husna Fatima 2 , Sarah Haney 2 , Anant Agarwal 2
1 , Naval Research Laboratory, Washington, District of Columbia, United States, 2 , Cree, Inc., Durham, North Carolina, United States

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10:30 AM - D10.4
Influence of Shockley Stacking Fault Propagation and Contraction on the Electrical Behavior of 4H-SiC Bipolar and Unipolar Devices.

Joshua Caldwell 1 , Robert Stahlbush 1 , Orest Glembocki 1 , Karl Hobart 1 , Eugene Imhoff 1 , Marko Tadjer 1 , Kendrick Liu 1
1 Power Electronics, Naval Research Lab, Washington , District of Columbia, United States

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10:45 AM - D10.5
Performance of SiC Microwave Transistors in Power Amplifiers.

Sher Azam 1 , Rolf Jonnson 2 , Erik Janzen 1 , Qamar Wahab 1 2
1 Physics (IFM), Linköping University, Linköping Sweden, 2 Swedish Defense Research Agency (FOI), Swedish Defense Research Agency (FOI), Linköping Sweden

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11:00 AM - D10: Devices1
BREAK

D12: Devices and Applications II
Session Chairs
Philip Neudeck
Thursday PM, March 27, 2008
Room 2004 (Moscone West)

2:30 PM - **D12.1
SiC-based Power Converters.

Madhu Chinthavali 1 , Burak Ozpineci 1 , Leon Tolbert 1 2 , Hui Zhang 2
1 Power Electronics and Electric Machinery Research Center, Oak Ridge National Laboratory, Knoxville, Tennessee, United States, 2 Electrical Engineering and Computer Science, The University of Tennessee, Knoxville, Tennessee, United States

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3:00 PM - D12.2
3D Thermal Stress Models for Single Chip SiC Power Sub-Modules.

Bang-Hung Tsao 1 , Jacob Lawson 1 , James Scofield 2
1 , University of Dayton Reserach Institute, Dayton, Ohio, United States, 2 , Air Force Research Labratory, WPAFB, Ohio, United States

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3:15 PM - D12.3
Numerical Modeling and Characterization of a 4H-SiC DMOSFET.

Siddharth Potbhare 1 , Neil Goldsman 1 , Aivars Lelis 2
1 Electrical and Computer Engineering, University of Maryland, College Park, Maryland, United States, 2 , US Army Research Laboratory, Adelphi, Maryland, United States

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3:30 PM - D12.4
Evaluation of Nitrogen and Aluminum Doping Impurities in Epitaxial 4H-SiC for Avalanche Photo Diode Applications.

Kurt Gaskill 1 , Brenda VanMil 1 , Evan Glaser 1 , Kok-Keong Lew 1 , Rachael Myers-Ward 1 , Charles Eddy 1 , Larry Wang 2 , Peter Zhao 2
1 , Naval Research Laboratory, Washington , District of Columbia, United States, 2 , Evans Analytical Group, Sunnyvale, California, United States

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4:00 PM - D12: Devices 3
BREAK