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2008 MRS Spring Meeting & Exhibit

March 24-28, 2008 | San Francisco
Meeting Chairs: Jeffrey C. Gelpey, Robert J. Hamers, Paul Muralt, Christine A. Orme

Symposium F : Materials Science and Technology for Nonvolatile Memories

2008-03-25   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Dirk Wouters IMEC
Steven Soss Intel Corporation
Seungbum Hong Argonne National Laboratory

Symposium Support

Applied Materials Inc
Numonyx
Seagate Technology
Symetrix Corp, Colorado Springs
F1: Ferroelectric/Ferromagnetic/Multi-Ferroic
Session Chairs
Orlando Auciello
Ramamoorthy Ramesh
Tuesday PM, March 25, 2008
Room 2006 (Moscone West)

9:30 AM - **F1.1
High Density Thin Film Ferroelectric Nonvolatile Memories.

Ramamoorthy Ramesh 1
1 Department of Materials Science & Engineering and Department of Physics, University of California-Berkeley, Berkeley, California, United States

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10:00 AM - F1.2
Magnetic Multilayer Ring Devices for Non-volatile Data Storage.

Caroline Ross 1 , Fernando Castano 1 , Bryan Ng 1 , Wonjoon Jung 1 , Irenee Colin 1
1 Dept. Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States

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10:15 AM - F1.3
In-situ Studies of Surface Structural and Chemical Phenomena in Ultra-Thin Ferroelectric Films.

Junsoo Shin 1 , Peter Maksymovych 1 , Von Braun Nascimento 1 , Albina Borisevich 1 , E. Ward Plummer 1 , Vincent Meunier 1 , Sergei Kalinin 1 , Arthur Baddorf 1
1 , Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States

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10:30 AM - F1.4
Theoretical Study of A Localized Quantum Spin Reversal by The Spin Injection in A Spin Quantum Dot: A Data Writing Method for A Single-Atom Memory.

Satoshi Kokado 1 , Kazumasa Ueda 1 , Kikuo Harigaya 2 , Akimasa Sakuma 3
1 Faculty of Engineering, Shizuoka University, Hamamatsu Japan, 2 Nanotechnology Research Institute, AIST, Tsukuba Japan, 3 Graduate School of Engineering, Tohoku University, Sendai Japan

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10:45 AM - F1.5
Local Piezoelectric Response and Domain Structure of PbTiO3 Nanotubes.

Yunseok Kim 1 , Changduck Bae 2 , Kyu-Hyung Lee 1 , Jeong Yong Lee 1 , Kwangsoo No 1 , Hyunjung Shin 2
1 Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of), 2 School of Advanced Materials Engineering and Center for Materials and Processes of Self-Assembly, Kookmin University, Seoul Korea (the Republic of)

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11:00 AM - F1
BREAK

11:30 AM - **F1.6
MgO-barrier-based Magnetic Tunnel Junctions for Spin Transfer Torque Random Access Memory.

Jun Hayakawa 1 2 , Shoji Ikeda 2 , Katsuya Miura 1 2 , Michihiko Yamanouchi 1 , Young Min Lee 2 , Ryutaro Sasaki 2 , Toshiyasu Meguro 2 , Masahiko Ichimura 1 , Kenchi Ito 1 , Takayuki Kawahara 3 , Riichiro Takemura 3 , Fumihiro Matsukura 2 , Hiromasa Takahashi 1 3 , Hideyuki Matsuoka 1 , Hideo Ohno 2
1 , Hitachi Advanced research Laboratory, Tokyo Japan, 2 , Tohoku University, Laboratory for Nanoelectronics and Spintronics, RIEC, Sendai Japan, 3 , Hitachi Central Research Laboratory, Tokyo Japan

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12:00 PM - F1.7
High-Density Ferroelectric Nanocapacitors Based on Nanowire/CNT Bottom Electrodes and Ferrelectric Nanotubes.

Hongjin Fan 1 , Susumu Kawasaki 1 , James Scott 1 , Paul Evans 2 , John Gregg 2
1 Centre of Ferroics, University of Cambridge, Cambridge United Kingdom, 2 Centre for Nanostructured Media, Queens University Belfast, Belfast, Northern Ireland, United Kingdom

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12:15 PM - F1.8
Chemistry, Electronic, Structural, and Transport Studies of CoFeB / MgO / CoFeB Magnetic Tunnel Junctions.

John Read 1 , Judy Cha 1 , Pinshane Huang 2 , William Egelhoff 3 , David Muller 1 , Robert Buhrman 1
1 , Cornell University, Ithaca, New York, United States, 2 , Carleton College, Northfield, Minnesota, United States, 3 , National Institute of Standards & Technology, Gaithersburg, Maryland, United States

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12:30 PM - F1.9
A Room Temperature Ferroelectric Directly on Silicon.

Maitri Warusawithana 1 , Y. Li 1 , L. Chen 1 , D. Schlom 1 , C. Cen 2 , C. Sleasman 2 , J. Levy 2 , J. Woicik 3 , L. Kourkoutis 4 , D. Muller 4 , J. Klug 5 , M. Bedzyk 5 , H. Li 6 , L. Wang 7
1 Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, United States, 2 Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania, United States, 3 , National Institute of Standards and Technology, Gaithersburg, Maryland, United States, 4 School of Applied and Engineering Physics, Cornell University, Ithaca, New York, United States, 5 Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States, 6 Physical Sciences Research Laboratories, Motorola Laboratories, Tempe, Arizona, United States, 7 , Intel Corporation, Santa Clara, California, United States

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12:45 PM - F1.10
Spin and Symmetry Filtering Effects in Single Crystal Magnetic Tunnel Junctions.

Coriolan Tiusan 1 , Fanny Greullet 1 , Michel Hehn 1 , Francois Montaigne 1 , David Halley 2 , Olivier Bengone 2 , Martin Bowen 2 , Wolfgang Weber 2
1 Laboratoire de Physique des Materiaux LPM-UMR7556, CNRS - University of Nancy, Vandoeuvre les Nancy France, 2 IPCMS UMR7504, CNRS - University of Strasbourg, Vandoeuvre les Nancy France

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2008-03-26   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Dirk Wouters IMEC
Steven Soss Intel Corporation
Seungbum Hong Argonne National Laboratory
F5: Poster Session: Emerging (RRAM/Crosspoint/Organic/Probe) II
Session Chairs
Wednesday PM, March 26, 2008
Exhibit Hall (Moscone West)

1:00 AM - F5.1
Molecular Conformation-dependent Memory Effects in Non-conjugated Polymers with Pendant Carbazole Moieties.

Siew Lay Lim 1 2 , Qidan Ling 2 , Eric Yeow Hwee Teo 3 , Chun Xiang Zhu 3 , Daniel Siu Hung Chan 3 , En-Tang Kang 2 , Koon Gee Neoh 2
1 NUS Graduate School of Integrative Sciences and Engineering (NGS), National University of Singapore, Singapore Singapore, 2 Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore Singapore, 3 SNDL, Department of Electrical and Computer Engineering, National University of Singapore, Singapore Singapore

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1:00 AM - F5.10
Electronic and Optical Data Read Out from Single Layer Organic Memory Device.

Basudev Pradhan 1 , Ghassan Jabbour 1
1 School of Materials, Arizona State University, Tempe, Arizona, United States

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1:00 AM - F5.11
Dependence of Organic Thickness on Electrical characteristic Behavior in Low Molecular Organic Nonvolatile Memory.

Yool Guk Kim 1 , Sung Ho Seo 1 , Gon Sub Lee 1 , Jae Gun Park 1 , Yoon Joong Kim 2
1 Department of Electrical & Computer Engineering, Hanyang University, Seoul Korea (the Republic of), 2 Electron Microscopy Team, Korea Basic Science Institute, Deajeon Korea (the Republic of)

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1:00 AM - F5.12
Low Molecular Organic Nonvolatile Memory Fabricated with Ni Nanocrystals Embedded in Alq3.

Oh YoungHwan 1 , Nam Woo Sik 1 , Lee Gon Sub 1 , Park Jea Gun 1 , Lee Yong Bok 2
1 , hanyang university, Seoul Korea (the Republic of), 2 , Korea Basic Science Institute, Daejeon Korea (the Republic of)

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1:00 AM - F5.13
Current Conduction Mechanism for Low-molecular Organic Nonvolatile Memory.

Sungho Seo 1 , Woo Sik Nam 1 , Gon Sub Lee 1 , Jea Gun Park 1
1 , Hanyang University, Seoul Korea (the Republic of)

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1:00 AM - F5.14
Effect of Au Nanocrystals Embedded in Conductive Polymer on Non-volatile Memory Window.

Hyun Min Seung 1 , Jong Dae Lee 1 , Byeong Il Han 1 , Gon Sub Lee 1 , Jae Gun Park 1
1 , Hanyang Univ., Seoul Korea (the Republic of)

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1:00 AM - F5.15
Resistive Switching Devices Based on Solid State Electrolytes.

Jiang Yin 1 , Hongxuan Guo 1 , Liang Chen 1 , Zhiguo Liu 1
1 Dept. of Phys./National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu, China

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1:00 AM - F5.16
Optical Properties of NiO Thin Films Grown by DC and RF Sputtering Deposition Studied with Spectroscopic Ellipsometry.

Seoung Ho Baek 1 , Hosun Lee 1 , Kwang Nam Choi 1 , Kwan Soo Chung 1 , Jun Woo Park 1
1 Dept. of Physics, Kyung Hee University, Yong-In, Kyonggi, Korea (the Republic of)

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1:00 AM - F5.18
Oxide Diode Fabricated at Room Temperature as a Switch Element.

Kwan Soo Chung 1 , Kwang Nam Choi 1 , Jun Woo Park 2 , Hosun Lee 2
1 Electronic Engineering, KyungHee University, Yongin-si, Gyenggi-do, Korea (the Republic of), 2 Physics, Kyunghee University, Yongin-si, Gyenggi-do, Korea (the Republic of)

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1:00 AM - F5.19
Substantial Reduction of Reset Current in CoO RRAM with Ta Bottom Electrode.

Hisashi Shima 1 , Fumiyoshi Takano 1 , Yukio Tamai 2 , Hidenobu Muramatsu 1 , Hiro Akinaga 1 , Isao Inoue 3 , Hidenori Takagi 3 4
1 Nanotechnology Research Institute , National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan, 2 Advanced Technology Research Laboratories, Sharp Corporation, 1 Asahi, Daimon-cho, Fukuyama, Hiroshima, Japan, 3 Correlated Electron Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki, Japan, 4 Department of Advanced Materials, University of Tokyo, Kashiwa, Chiba, Japan

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1:00 AM - F5.2
Direct Metal Transfer (DMT) at Nanoscale for the Ubiquitous Organic Devices Era.

Gun Young Jung 1 , Kyeongmi Lee 1
1 Materials Science and Engineering, GIST, Gwangju Korea (the Republic of)

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1:00 AM - F5.20
The Interfacial States between Metal/Oxide and the RRAM – Part II.

Wei Pan 1 , David Evans 1
1 Materials and Device Applications Lab, Sharp Labs of America, Camas, Washington, United States

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1:00 AM - F5.21
Process Optimization of Ni Nanocrystals Formation Using O2 Plasma Oxidation to Fabricate Low-molecular Organic Nonvolatile Memory.

Woo Sik Nam 1 , Gon Sub Lee 1 , Sung Ho Seo 1 , Jea Gun Park 1
1 , Tera-bit Nonvolatile Memory Development Center, Hanyang University, Seoul Korea (the Republic of)

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1:00 AM - F5.3
AC Characterization of Cross-linkable Polymer Memory Devices.

Bao Lei 1 , Wei Lek Kwan 1 , Yang Yang 1
1 Materials Science and Engineering, UCLA, Los Angeles, California, United States

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1:00 AM - F5.4
Resistance Switching of Organic Devices Based on P3HT-PCBM Bulk Heterojunction.

Hey Jin Myoung 1 , Sung-Soo Bae 1 , Hu Young Jeong 1 , Sung-Yool Choi 1
1 , ETRI, Daejeon Korea (the Republic of)

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1:00 AM - F5.5
Stackable Polymer Memory Devices.

Wei Lek Kwan 1 , Ricky J. Tseng 1 , Wei Wu 1 , Qibing Pei 1 , Yang Yang 1
1 Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California, United States

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1:00 AM - F5.6
Au Nanoparticles Blended poly(N-vinylcarbazole) Films for Nonvolatile Memory Applications.

Pei-Ying Lai 1 , Jen-Sue Chen 1
1 Materials Science and Engineering, National Cheng Kung University, Tainan Taiwan

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1:00 AM - F5.7
Metal Nanoparticles Free Transparent Organic Bistable Memory Devices.

Sung Hyun Kim 1 , Kyoung Soo Yook 2 , Jyongsik Jang 1 , Oh Young Kim 2 , Jun Yeob Lee 2
1 , Seoul National University, Seoul Korea (the Republic of), 2 , Dankook University, YoungIn Korea (the Republic of)

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1:00 AM - F5.9
Effect of Ferroelectric Polarization on Tunneling Current.

Evgeny Kiriranov 1 , Andrei Sokolov 3 4 , Jody Redepenning 2 4
1 , Lincoln South-West High School, Lincoln, Nebraska, United States, 3 Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska, United States, 4 Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, United States, 2 Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska, United States

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1:00 AM - F5
F5.8 Transferred to F7.3

Show Abstract

2008-03-27   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Dirk Wouters IMEC
Steven Soss Intel Corporation
Seungbum Hong Argonne National Laboratory
F7: Emerging (Probe/Cross-point/Organic) III
Session Chairs
Hyoungsoo Ko
Yang Yang
Thursday AM, March 27, 2008
Room 2006 (Moscone West)

9:30 AM - **F7.1
Recent Progress on Organic/polymer Memory Devices and Their Stacking Structure.

Yang Yang 1 2 , Wei Lek Kwan 1 , Bao Lei 1 , Ricky Tseng 1
1 Materials Sci. & Eng., UCLA, Los Angeles, California, United States, 2 California Nanosystem Institute, UCLA, Los Angeles, California, United States

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10:00 AM - F7.2
Understanding the Bi-polar Nonvolatile Switching in Oxide Based Resistive Junctions.

J. Yang 1 , F. Miao 1 , D. Ohlberg 1 , J. Borghetti 1 , M. Pickett 1 , Z. Li 1 , W. Tong 1 , D. Stewart 1 , R. Williams 1
1 , Hewlett-Packard Laboratories, Palo Alto, California, United States

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10:15 AM - F7.3
Polymeric Schottky Diodes for Non-volatile Memories.

Kamal Asadi 1 , Dago de Leeuw 1 2 , Bert de Boer 1 , Paul Blom 1
1 Zernike Institute for Advanced Materials, University of Groningen, Groningen Netherlands, 2 High Tech Campus, Philips Research Laboratoires, Eindhoven Netherlands

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10:30 AM - F7.4
Amorphous Silicon Based Nonvolatile Resistive Switching Crossbar Memory.

Sung Hyun Jo 1 , Wei Lu 1
1 , University of Michigan, Ann Arbor, Michigan, United States

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10:45 AM - F7.5
High Performance MIM and Cross-Point Non-volatile Organic Memory Devices using Novel Polyfluorene-Derivative Single Layer Film.

Tae Wook Kim 1 , Seung-Hwan Oh 1 , Hyejung Choi 1 , Gunuk Wang 1 , Dong-Yu Kim 1 , Hyunsang Hwang 1 , Takhee Lee 1
1 Material science and engineering, Gwangju Institute of Science and Technology& techenlogy, Gwangju Korea (the Republic of)

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11:00 AM - F7
BREAK

11:30 AM - F7.6
Resistance Switching in Ionic Nanowires.

David Schoen 1 , Stephen Conner 1 , Yi Cui 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States

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11:45 AM - F7.7
Dual-frequency resonance-tracking Piezoresponse Force Microscopy: High Sensitivity Imaging, Spectroscopy, and Energy Dissipation.

Anil Ganepalli 1 , Stephen Jesse 2 , Katyayani Seal 2 , Keith Jones 1 , Brian Rodriguez 2 , Clint Callahan 1 , Sergei Kalinin 2 , Roger Proksch 1
1 , Asylum Research, Santa Barbara, California, United States, 2 The Center for Nanophase Materials Sciences and Materials Sciences and Technology Division, Oak Ridge national Laboratory, Oak Ridge, Tennessee, United States

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12:00 PM - F7.8
Nonvolatile Resistive Switching Characteristics of HfO2 with Cu Doping.

Weihua Guan 1 , Shibing Long 1 , Ming Liu 1 , Wei Wang 2
1 , Institute of Microelectronics, Chinese Academy of Sciences, Beijing China, 2 , Indiana University - Purdue University Indianapolis, Indianapolis, Indiana, United States

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12:15 PM - F7.9
Lattice Strain and Properties of Self Assembled BiFeO3-CoFe2O4 Nanocomposite Thin Films.

Murali Rajaram 1 , Nico Dix 1 , Celine Lichtensteiger 4 , Jill Guyonnet 4 , Vassil Skumryev 2 , Manuel Varela 3 , Florencio Sanchez 1 , Jean-Marc Triscone 4 , Josep Fontcuberta 1
1 , ICMAB-CSIC, Barcelona Spain, 4 DPMC, Université de Genève, Genève Switzerland, 2 , ICREA, Barcelona Spain, 3 Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Barcelona Spain

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12:30 PM - F7.10
Diblock-copolymer Mediated Nanopatterning of Solution-Derived Electronic Oxides.

Geoff Brennecka 1 , John Ekerdt 2 , Jill Wheeler 1 , Bruce Tuttle 1
1 Electronic and Nanostructured Materials, Sandia National Laboratories, Albuquerque, New Mexico, United States, 2 Deparment of Chemical Engineering, University of Texas at Austin, Austin, Texas, United States

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12:45 PM - F7.11
Evolution of the Resistive Switching Characteristics During Electroforming of Epitaxial Iron-doped SrTiO3 Thin Films.

Tobias Menke 1 2 , Regina Dittmann 1 2 , Krzysztof Szot 1 2 , Paul Meuffels 1 2 , Rainer Waser 1 2
1 Institute of Solid State Research, Research Center Jülich, Jülich Germany, 2 Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, Jülich Germany

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F8: Future Nonvolatile Memories I
Session Chairs
Orlando Auciello
Seungbum Hong
Thursday PM, March 27, 2008
Room 2006 (Moscone West)

2:30 PM - **F8.1
Optimization of Advanced FeRAM Materials and Processes.

Carlos Paz de Araujo 1 2
1 , Symetrix Corp., Colorado Springs, Colorado, United States, 2 Electrical Engineering, University of Colorado, Colorado Springs, Colorado, United States

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3:00 PM - F8.2
Aluminum Oxide Thin Films Using Sputtering Technique as Blocking Oxide for Flash Memory Applications.

Pawan Singh 1 2 , Kaushal Singh 1 , Ralf Hofmann 1 , Karl Armstrong 1 , Souvik Mahapatra 2 , Nety Krishna 1
1 , Applied Materials, Santa Clara, California, United States, 2 Electrical Engineering, Indian Institite of Technology Bombay, Mumbai India

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3:15 PM - F8.3
Materials Aspects of Si-rich Silicon Nitrides for Use in Antifuse Nonvolatile Memories with Low Programming Voltages.

Scott Habermehl 1 , Roger Apodaca 1 , Robert Kaplar 1 , Liz Roherty-Osmum 1 , David Stein 1
1 Microelectronics Development Lab, Sandia National Laboratories, Albuquerque, New Mexico, United States

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3:30 PM - F8.4
Molecular Memory Devices using Ruthenium-terpyridine, MLCT, Complexes.

Hyoyoung Lee 1 , Junghyun Lee 1 , Kyoungja Seo 1 , Gyeong Sook Bang 1 , Hojong Chang 1 , Sangkwan Kim 1
1 NCRI, Center of Smart Molecular Memory , ETRI, Daejeon Korea (the Republic of)

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3:45 PM - F8.5
Direct Time Resolved Observation of Magnetization Switching induced by Spin-Transfer in Magnetic Tunnel Junctions for MRAM.

Thibaut Devolder 1 , Jun Hayakawa 2 3 , Kenchi Ito 2 , Hiromasa Takahashi 2 , Shoji Ikeda 3 , Paul Crozat 1 , Joo-von Kim 1 , Claude Chappert 1 , Hideo Ohno 3
1 IEF-UMR CNRS 8622, University Paris Sud, Orsay France, 2 Advanced Research Laboratory, Hitachi, Ltd, Tokyo Japan, 3 Laboratory for Nanoelectronics and Spintronics, RIEC-Tohoku University , Sendai Japan

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4:00 PM - F8:
BREAK

4:30 PM - F8.6
Electron Energy-loss Spectroscopy of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions.

Judy Cha 1 , J. Read 2 , William Egelhoff 3 , R. Buhrman 1 , David Muller 1
1 School of Applied and Engineering Physics, Cornell University, Ithaca, New York, United States, 2 Department of Physics, Cornell University, Ithaca, New York, United States, 3 Metallurgy Division, Materials Science and Engineering Laboratory, National Institute of Standards & Technology, Gaithersburg, Maryland, United States

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4:45 PM - F8.7
Highly Robust Thermal Stability of Metal-Rich Gd Nanocrystal Memory for High Density Flash Application.

Chao-Sung Lai 1 , Jian-Yi Wong 1 , Jer-Chyi Wang 3 , Chin Ting Lin 1 , Hsing-Kan Peng 1 , Yu-Ching Fang 2 , Li Hsu 2 , Hui-Chun Wang 2
1 Electronic Engineering, Chang Gung University, Tao-Yuan Taiwan, 3 , Nanya, Tao-Yuan Taiwan, 2 Science & Technology, Materials & Electro-Optics Research Division, Chung-Shan, Tao-Yuan Taiwan

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5:00 PM - F8.8
Temperature Dependence of Electrical Properties of NiO Thin Films for Resistive Random Access Memory.

Ryota Suzuki 1 , Jun Suda 1 , Tsunenobu Kimoto 1 2
1 Department of Electronic Science and Engineering, Kyoto University, Kyoto Japan, 2 Photonics and Electronics Science and Engineering Center (PESEC), Kyoto University, Kyoto Japan

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5:15 PM - F8.9
Simulation of Resistance Switching Behavior in Oxide Thin Film Heterostructures.

Sukwon Choi 1 , Joanna Meador 1 , Kevin Jiang 1 , Rozana Hussin 2 , Mohammad Noman 2 , Paul Salvador 1 , Marek Skowronski 1 , James Bain 2
1 Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States, 2 Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States

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5:45 PM - F8.11
Nanostructured, Non-volatile Charge Trap Flash Memory Devices Based on Layer-by-layer Assembled Functional Nanoparticle/polyelectrolyte Multilayers.

Inpyo Kim 1 , Jinhan Cho 1 , Jang-sik Lee 1 , Jeongju Park 1 , Chiyoung Lee 1 , Yong-mu Kim 1 , Hyunjung Shin 1 , Jaegab Lee 1 , Frank Caruso 2
1 School of Advanced Material Engineering, Kookmin University, Seoul Korea (the Republic of), 2 Centre for Nanoscience and Nanotechnology, Department of Chemical and Biomolecular Engineering, The University of Melbourne, Melbourne, Victoria, Australia

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