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2008 MRS Spring Meeting & Exhibit

March 24-28, 2008 | San Francisco
Meeting Chairs: Jeffrey C. Gelpey, Robert J. Hamers, Paul Muralt, Christine A. Orme

Symposium G : Phase-Change Materials for Reconfigurable Electronics and Memory Applications

2008-03-25   Show All Abstracts

Symposium Organizers

Simone Raoux IBM Almaden Research Center
Arthur (Art) H. Edwards Air Force Research Laboratory/VSSE
Matthias Wuttig I. Physikalisches Institut IA
Paul J. Fons Advanced Institute of Industrial Science and Technology
P. Craig Taylor Colorado School of Mines

Symposium Support

Air Force Office of Scientific Research (AFOSR)
IBM Almaden Research Center
G1: Theory of Phase Change Materials
Session Chairs
Matthias Wuttig
Tuesday PM, March 25, 2008
Room 2007 (Moscone West)

9:30 AM - *G1.1
Market Opportunities and Challenges for Phase-change Memory.

Stefan Lai 2 , Stephen Hudgens 1
2 , Ovonyx, Inc., Rochester Hills, Michigan, United States, 1 , Ovonyx Technologies, Inc., Santa Clara, California, United States

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10:15 AM - **G1.2
Computer Simulation of the Phase-change Cycle of GST-225.

Stephen Elliott 1 , Jozsef Hegedus 1
1 Chemistry, University of Cambridge, Cambridge United Kingdom

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10:45 AM - G1:Theory
BREAK

11:15 AM - **G1.3
Tight-Binding Theory of Phase-Change Materials.

Walter Harrison 1
1 Applied Physics, Stanford University, Stanford, California, United States

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11:45 AM - **G1.4
Phase Change Alloys for Non-volatile Memories - Designing New Storage Materials from First Principles.

Wojciech Welnic 1 2 3 , Daniel Lusebrink 4 , Daniel Wamwangi 4 , Michael Gillessen 5 , Richard Dronskowski 5 , Silvana Botti 1 2 , Lucia Reining 1 2 , Matthias Wuttig 4
1 Laboratoire des Solides Irradies, Ecole Polytechnique, Palaiseau France, 2 , European Theoretical Spectroscopy Facility (ETSF), Palaiseau France, 3 , European Synchrotron Radiation Facility (ESRF), Grenoble France, 4 I. Physikalisches Institut IA, RWTH Aachen, Aachen Germany, 5 Instituts für Anorganische Chemie, RWTH Aachen, Aachen Germany

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12:15 PM - G1.5
First Principles Study of Models for Amorphous Ge-X-Y Compounds.

Arthur Edwards 1 , Andrew Pineda 1
1 , AFRL, Kirtland AFB, New Mexico, United States

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12:30 PM - G1.6
Massively-parallel Density Functional Simulations of the Disordered Te-based Phase-change Materials.

Jaakko Akola 1 2 , R. Jones 2
1 IFF, Forschungszentrum Jülich, Jülich Germany, 2 Department of Physics, University of Jyväskylä, Jyväskylä Finland

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12:45 PM - G1.7
Theoretical model of Crystal Nucleation in PCM NANO-Glasses.

Y. Kryukov 1 , M. Mitra 1 2 , I. Karpov 2 , V. Karpov 1
1 Physics and Astronomy, University of Toledo, Toledo, Ohio, United States, 2 , Intel Corporation, Santa Clara, California, United States

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2008-03-27   Show All Abstracts

Symposium Organizers

Simone Raoux IBM Almaden Research Center
Arthur (Art) H. Edwards Air Force Research Laboratory/VSSE
Matthias Wuttig I. Physikalisches Institut IA
Paul J. Fons Advanced Institute of Industrial Science and Technology
P. Craig Taylor Colorado School of Mines
G6: Phase Change Materials - Applications I
Session Chairs
Chung Lam
Thursday AM, March 27, 2008
Room 2007 (Moscone West)

9:00 AM - *
*G6.1 Transferred to *U5.1

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9:30 AM - **G6.2
Interlayer Atomic Zipper with Large Optical and Electrical Transition in SbTe Alloy.

Junji Tominaga 1 , Paul Fons 1 , Takayuki Shima 1 , Masashi Kuwahara 1 , Osamu Suzuki 1 , Alexander Kolobov 1
1 CAN-FOR, AIST, Tsukuba Japan

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10:00 AM - **G6.3
Prospective Of Phase-Change Memory.

Sumio Hosaka 1 , Naoya Higano 1 , Kazuhiro Ohta 1 , Akihira Miyachi 2 , Hayato Sone 1 , You Yin 1
1 Graduate School of Engineering, Gunma National University, Kiryu, Gunma, Japan, 2 Advanced Technology Research Center, Gunma National University, Gunma Japan

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10:30 AM - G6.4
Blu-ray Type Super-Resolution Near-Field Phase Change Disk with Sn-doped GST Mask Layer.

Irene Lee 1 , Xiangshui Miao 1 , Kok Thong Yong 2 , Chee Lip Gan 2 , Luping Shi 1
1 Optical Materials and System, Data Storage Institute, Singapore Singapore, 2 Materials Science and Engineering, Nanyang Technological University, Singapore Singapore

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10:45 AM - G6 Appl1
BREAK

11:15 AM - **G6.5
Recent Advances on the Modeling of Phase Change Materials and Devices.

Andrea Lacaita 1 , Ugo Russo 1 , Daniele Ielmini 1
1 , Politecnico di Milano, Milano Italy

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11:45 AM - **G6.6
Highly Scalable Phase Change Memory Cell; A Technological Overview.

Sunglae Cho 1 , Jinil Lee 1 , Hyeyoung Park 1 , Dohyung Kim 1 , Dong-Hyun Im 1 , Young-Lim Park 1 , Heeju Shin 1 , Hyeong-Geun An 1 , Han-Bong Ko 1 , Dong-Ho Ahn 1 , Myungjin Kang 1 , Doo-Hwan Park 1 , Jeonghee Park 1 , Hyun-Suk Kwon 1 , Yongho Ha 1 , Junsoo Bae 1 , Mi-Lim Park 1 , Byoung-Jae Bae 1 , Hideki Horii 1 , Soon-Oh Park 1 , Hee-Seok Kim 1 , U-In Chung 1 , Joo-Tae Moon 1 , Won-Seong Lee 1
1 , Samsung Electronics Co., LTD., Yongin-City, Gyeonggi-Do, Korea (the Republic of)

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12:15 PM - G6.7
RESET Resistance Dynamics in Phase Change Bridge Devices.

Daniel Krebs 1 , Simone Raoux 2 , Charles Rettner 2 , Yi-Chou Chen 3 , Geoffrey Burr 2 , Matthias Wuttig 1
1 I. Institute of Physics, RWTH Aachen University, Aachen, Nordrhein-Westfalen, Germany, 2 , IBM Almaden Research Center, San Jose, California, United States, 3 , Macronix International Co. Ltd., Hsinchu Taiwan

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12:30 PM - G6.8
Phase Separation Behavior of Ge2Sb2Te5 Line Structure During Electrical Stress Biasing.

Sung-Wook Nam 1 , Cheolkyu Kim 2 , Min-Ho Kwon 1 , Jung-Sub Wi 1 , Hyo-Sung Lee 1 , Dongbok Lee 1 , Dongmin Kang 1 , Tae-Yon Lee 2 , Yoonho Khang 2 , Ki-Bum Kim 1
1 Department of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 Semiconductor Device Lab, Samsung Advanced Institute of Technology, Suwon Korea (the Republic of)

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12:45 PM - G6.9
Investigation of SET and RESET States Resistance in Ohmic Regime for Phase-Change Memory.

Semyon Savransky 1 , Ilya Karpov 1
1 , Intel Corporation, Santa Clara, California, United States

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