The scaling of silicon MOSETs, DRAM, and Flash memory has already required the use for high-k dielectrics and the trend is expected to continue. Present Si MOSFETs employ high-K dielectrics, metal gates, and strain-engineered layers. Further progress requires new semiconductor channel materials and new device structures. For future MOSFET logic devices and power MOSFETs, novel channel materials such as III-V, Ge, SiGe, GaN, and transition metal dichalcogenides are being investigated. Tunnel FETs are one alternative device structure. Future non-volatile memory includes resistive RAM, phase change, and 3D Flash memory. This symposium will emphasize not only the advances in materials but also the new device structures that are required for the new materials to provide substantial improvements in device performance.