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Call for Papers

Symposium EP15—Diamond Power Electronic Devices

Due to its wide band gap, large electron and hole mobility, high thermal conductivity and outstanding breakdown field, diamond is the ultimate semiconductor for high power electronics. Diamond is currently attracting attention as a semiconductor material having a low loss for the next generation of power devices that follows Si, SiC and GaN. Recent progresses in the field of wafer production, doping and processing allow to fabricate devices, which confirm the potentialities of diamond for high power / high voltage electronics operating at high temperature. However, diamond is a material having some specificities inherent to its properties and crystal growth processes. For example, doping by ion implantation or diffusion is not achievable, or as another example, the larger ionization energy of dopants results in large serial resistance of device. In order to overcome these problems, new architectures or operating principles of devices must be developed in order to fully beneficiate from the outstanding diamond properties. Also, the higher working temperature and higher power densities bring new challenges for materials scientists. The symposium will bring together researchers working on diamond and other wide bandgap semiconductors, devices engineers and materials scientists. Abstracts are solicited in all areas of mono-crystal material research and devices applications, taking into account the unique combination of their superlative properties including thermal conductivity, electrical conductivity and outstanding breakdown field.

Topics will include:

  • Diamond heteroepitaxy for large size substrates
  • Diamond doping (n- and p-type)
  • Electronic and optical properties of diamond
  • Defect characterization and modeling
  • Diamond surfaces and interfaces (MOS and Schottky)
  • Device analysis and modeling
  • Unipolar diamond devices: Schottky, MOSFET, MESFET, JFET
  • Bipolar diamond devices: BJT, PN, PIN, Schottky-PIN
  • Electron emission devices using negative electron affinity
  • Particles and radiation detection devices
  • UV light diamond emitter
  • Physics of NV centers sensing and emitting devices
  • Diamond devices integration in power converters
  • High temperature packaging
  • System integration of diamond power devices
  • Bulk and epitaxial growths of high quality mono-crystalline diamond

Invited Speakers:

  • Jocelyn Achard (University of Paris, France)
  • Daniel Araujo (University of Cadiz, Spain)
  • David Eon (University of Grenoble Alpes, France)
  • Tim Grotjohn (Michigan State University, USA)
  • Takayuki Iwasaki (Tokyo Institute of Technology, Japan)
  • Nicolas Rouger (Centre National Recherche Scientifique, France)
  • Daisuke Takeuchi (National Institute of Advanced Industrial Science and Technology, Japan)
  • Tokuyuki Teraji (National Institute for Materials Science, Japan)
  • Hitoshi Umezawa (National Institute of Advanced Industrial Science and Technology, Japan)

Symposium Organizers

Julien Pernot
University of Grenoble Alpes
Institut Néel - CNRS
France

Satoshi Koizumi
National Institute for Materials Science
Optical and Electronic Materials Unit
Japan

Robert J. Nemanich
Arizona State University
Department of Physics
USA

Mariko Suzuki
Toshiba Corporation
Corporate Research & Development Center
Japan