Due to its wide band gap, large electron and hole mobility, high thermal conductivity and outstanding breakdown field, diamond is the ultimate semiconductor for high power electronics. Diamond is currently attracting attention as a semiconductor material having a low loss for the next generation of power devices that follows Si, SiC and GaN. Recent progresses in the field of wafer production, doping and processing allow to fabricate devices, which confirm the potentialities of diamond for high power / high voltage electronics operating at high temperature. However, diamond is a material having some specificities inherent to its properties and crystal growth processes. For example, doping by ion implantation or diffusion is not achievable, or as another example, the larger ionization energy of dopants results in large serial resistance of device. In order to overcome these problems, new architectures or operating principles of devices must be developed in order to fully beneficiate from the outstanding diamond properties. Also, the higher working temperature and higher power densities bring new challenges for materials scientists. The symposium will bring together researchers working on diamond and other wide bandgap semiconductors, devices engineers and materials scientists. Abstracts are solicited in all areas of mono-crystal material research and devices applications, taking into account the unique combination of their superlative properties including thermal conductivity, electrical conductivity and outstanding breakdown field.