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Call for Papers

Symposium EP2—Silicon CarbideSubstrates, Epitaxy, Devices, Circuits and Graphene

Advances in silicon carbide materials, processing, and device design have recently resulted in the implementation of SiC-based electronics for high voltage, high temperature, and high frequency applications. This symposium will focus on new developments in basic science of SiC materials as well as rapidly maturing device and circuit technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in homo- and hetero-epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures and integrated circuits.

This symposium will bring together the crystal growers, materials engineers, modelers, physicists, and device experts needed to continue the rapid pace of silicon carbide-based technology.

Topics will include:

  • Devices for efficient power conversion
  • Integrated circuits for harsh environments
  • SiC sensors and biomedical applications
  • Graphene from SiC
  • Improved ohmic and rectifying contacts
  • Surfaces and interfaces
  • Oxidation and alternative dielectric materials
  • Bulk SiC growth (including large diameter crystals), modeling, and characterization
  • Homo- and hetero-epitaxial growth (doping control, carrier lifetimes, etc.)

Invited Speakers:

  • Nance Ericson (Oak Ridge National Laboratory, USA)
  • Michael Fuhrer (Monash University, Australia)
  • Chih-Fang Huang (National Tsing Hua University, Taiwan)
  • Olle Kordina (Linkoeping University, Sweden)
  • Robert Okojie (NASA Glenn Center, USA)
  • Adolf Schoner (Ascatron, Sweden)
  • Maki Suemitsu (Tohoku University, Japan)
  • Sid Sundaresan (GeneSiC, USA)
  • Hidekazu Tsushida (Central Research Institute of Electric Power Industry, Japan)
  • Feng Zhao (Washington State University, USA)
  • Marcin Zielinski (NovaSiC, France)

Symposium Organizers

Francesca Iacopi
Griffith University
Queensland Micro and Nanotechnology Centre
Australia
61-7-373-58014, f.iacopi@griffith.edu.au

Camilla Coletti
Istituto Italiano di Tecnologia
Italy
39-050-509874, camilla.coletti@iit.it

Sei-Hyung Ryu
Cree Inc.
USA

Stephen E. Saddow
University of South Florida
Electrical Engineering Department
USA
813-974-4773, saddow@ieee.org

Carl-Mikael Zetterling
KTH Royal Institute of Technology
Sweden
46-8-790-4344, bellman@kth.se