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Call for Papers

Symposium ED1—Silicon-Carbide, Diamond and Related Materials for Quantum Technologies

The current advancements in quantum technologies will enable the development of ultrafast data processing and communications which will lead to scalable quantum networks and computation. In the center of these developments is an advanced material science platform allowing realization of quantum devices and addressing and readout protocols. The nanoscale nature of this topic brings forth challenges in the materials physics, chemistry and engineering needed to enable this development. This symposium will address the materials issues associated with developing quantum technologies: properties of new and existing color centers, engineering properties especially for quantum memory, entanglement and readout requirements, and defining the limits of competing interactions which cause spin decoherence. Development and understanding of addressable quantum states in solid state materials, such as color centers in diamond and point defects in silicon and silicon carbide, that are coherent at non-cryogenic temperatures provides the framework for these innovative technologies.

This symposium aims to address recent progress in solid state quantum technologies that are driven by materials preparation and the associated color center or defect characterization. The topics that will be addressed will include defect formation and characterization including scenarios on managing the effects of level crossing when appropriate, quantum photonics, entanglement, and addressing/read-out of quantum states. External materials issues that affect applications are also of interest.

Topics will include:

  • Materials issues in addressing quantum states
  • Entanglement and quantum repeaters
  • Methods to create color centers and point defects in diamond, silicon and silicon carbide
  • Advantages and disadvantages of epitaxial vs bulk grown samples
  • Defect characterization and engineering; control of defect density with aim towards quantum technologies applicability
  • New color centers and point defects, especially for the wide range of SiC polytypes
  • Placement of color centers into photonic structures and cavities
  • Single photon sources including electrically controlled sources

Invited Speakers:

  • Igor Aharonovich (University of Technology Sydney, Australia)
  • David Awschalom (University of Chicago, USA)
  • Thomas Babinec (U.S. Army Research Laboratory, USA)
  • Lee Bassett (University of Pennsylvania, USA)
  • Luke Bissell (Air Force Research Laboratory, USA)
  • Sam Carter (U.S. Naval Research Laboratory, USA)
  • Vladimir Dyakonov (Würzburg University, Germany)
  • Viktor Ivády (Linköping University and Wigner RCP, Sweden)
  • Ania Bleszynski Jayich (University of California, Santa Barbara, USA)
  • Fedor Jelezko (Ulm University, Germany)
  • Brett C Johnson (University of Melbourne, Australia)
  • Helena Knowles (University of Cambridge, England)
  • Sang-Yun Lee (Stuttgart University, Germany)
  • Nathalie P de Leon (Princeton University, USA)
  • Gavin Morely (University of Warwick, England)
  • Nguyen Tien Son (Linköping University, Sweden)

Symposium Organizers

Kurt Gaskill
U.S. Naval Research Laboratory

Adam Gali
Wigner Research Centre for Physics
Institute for Solid State Physics and Optics, Hungarian Academy of Sciences
36-1-392-2222/1913, agali@eik.bme.hu

Brenda VanMil
U.S. Army Research Laboratory

Jörg Wrachtrup
Stuttgart University