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Symposium ED7 : Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power

2017-04-18   Show All Abstracts

Symposium Organizers

Andrew Kummel, University of California, San Diego
Alexander Demkov, University of Texas, Austin
John Robertson, Cambridge Univ
Shinichi Takagi, University of Tokyo
ED7.1: Memory I
Session Chairs
Andrew Kummel
Dirk Wouters
Tuesday AM, April 18, 2017
PCC North, 100 Level, Room 131 A

10:30 AM - *ED7.1.01
Computing with Coupled Dynamical Systems

Suman Datta 1 , Nikhil Shukla 1 , A. Parihar 2 , V. Narayanan 3 , A. Raychowdhury 2
1 , University of Notre Dame, Notre Dame, Indiana, United States, 2 , Georgia Institute of Technology, Atlanta, Georgia, United States, 3 , The Pennsylvania State University, State College, Pennsylvania, United States

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11:00 AM - ED7.1.02
Growth of NbO2 by Molecular-Beam Epitaxy and Characterization of its Metal-Insulator Transition

Lindsey Noskin 1 , Darrell Schlom 1 2
1 Materials Science and Engineering, Cornell University, Ithaca, New York, United States, 2 , Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York, United States

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11:15 AM - ED7.1.03
Infrared Near-Field Spectroscopy of Free Charge Carriers at Grain Boundaries in Sr1-xLaxTiO3 Ceramics on the nm-Scale

Martin Lewin 1 2 , Fabian Gaussmann 2 , Jochen Wueppen 2 , Sebastian Nyga 2 , Bernd Jungbluth 2 , Rainer Waser 3 4 , Thomas Taubner 1 2
1 Institute of Physics (IA), RWTH Aachen University, Aachen Germany, 2 , Fraunhofer Institute for Laser Technology (ILT), Aachen Germany, 3 Institute of Electronic Materials (IWE 2), RWTH Aachen University, Aachen Germany, 4 , Juelich Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT), Aachen Germany

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11:30 AM - ED7.1.04
Molecular Beam Epitaxy Grown NbO2 Thin Films for Selector Devices

Alexander Demkov 1 , Tobias Hadamek 1 , Agham Posadas 1 , Hyunsang Hwang 2 , JaeHyuk Park 2
1 , University of Texas, Austin, Texas, United States, 2 , Pohang University of Science and Technology, Pohang Korea (the Republic of)

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11:45 AM - ED7.1.05
A Novel Forming-Free Bipolar Resistive Memory Based On ITO/V2O5/ITO Structure

Zhenni Wan 1 , Robert Darling 1 , M.P. Anantram 1
1 , University of Washington, Seattle, Washington, United States

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ED7.2: Memory II
Session Chairs
Alexander Demkov
John Robertson
Tuesday PM, April 18, 2017
PCC North, 100 Level, Room 131 A

1:30 PM - *ED7.2.01
ReRAM Devices—From New Memory to Beyond von Neumann Computing Applications

Dirk Wouters 1
1 , RWTH Aachen University, Aachen Germany

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2:00 PM - ED7.2.02
Oxygen Stoichiometry Controlled Resistive Switching Modes in HfOx and TaOx Based RRAM Devices

Sankaramangalam Sharath 1 , Stefan Vogel 1 , Erwin Hildebrandt 1 3 , Jose Kurian 1 , Philipp Komissinskiy 1 , Thomas Schroeder 2 3 , Lambert Alff 1
1 Institute of Materials Science, TU Darmstadt, Darmstadt Germany, 3 , Brandenburgische Technische Universität, Cottbus, Cottbus Germany, 2 , IHP, Frankfurt Germany

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2:15 PM - ED7.2.03
The Effect of Oxygen Exchange Layer on the Performance of Tantalum Oxide-Based RRAM

Zahiruddin Alamgir 1 , Joshua Holt 1 , Nathaniel Cady 1
1 , State University of New York Polytechnic Institute, Albany, New York, United States

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2:30 PM - *ED7.2.04
In Case of Emergency Break the Z-Glass Ceiling—Thin Film Processes for Advanced Integration and Devices

R. Clark 1 , T. Hakamata 1 , K. Tapily 1 , K.-H. Yu 1 , S. Consiglio 1 , D. O'Meara 1 , J. Smith 1 , D. Newman 1 , C. Wajda 1 , G. Leusink 1
1 , TEL Technology Center, America LLC, Albany, New York, United States

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3:00 PM -
BREAK

3:30 PM - *ED7.2.05
Quantum Computing in Silicon with Donors

Michelle Simmons 1
1 UNSW Australia, Centre for Quantum Computation and Communication Technology, Kensington, New South Wales, Australia

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4:00 PM - ED7.2.06
Impact of In Situ Reducing Plasma Treatments on the Electrical Properties of RRAM Devices Based on ALD Deposited Al2O3 Dielectric Material

Brice Eychenne 1 2 , Patrice Gonon 1 2 , Marceline Bonvalot 1 2
1 , LTM-CNRS, Grenoble France, 2 , CEA-LETI, Grenoble France

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4:15 PM - ED7.2.07
Investigation of the Cell-to-Cell Interference Induced by the Bended ONO Structure in 3D NAND Flash Memories

Won-Hyo Cha 1 , BongReol Park 1 , Jaehyun Chung 1 , Kyeong Rok Kim 1 , Hae Soon Oh 1 , Byeong Chan Bang 1 , Jung Woo Lee 1 , Han Soo Joo 1 , Yong Seok Suh 1 , Seok Won Cho 1 , Se Kyung Choi 1 , Ki Seog Kim 1 , Myoung Kwan Cho 1 , Heehyun Chang 1 , Jin Woong Kim 1
1 , SK HYNIX, Chung-Ju Korea (the Republic of)

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4:30 PM - ED7.2.08
Controllable Formation of Conductive Filament by Selective Oxidation near the Tip-Region of Pyramid-Structured Active Electrode in Resistive Memory

Youngjin Kim 1 2 , Keun-Young Shin 1 , Jong Hyuk Park 1 , Sang-Soo Lee 1 2
1 , Korea Institute of Science and Technology, Seoul Korea (the Republic of), 2 KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul Korea (the Republic of)

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4:45 PM - ED7.2.09
The Low Temperature Data Retention Improvement in 1Znm TLC NAND Flash

Jaewook Yang 1 , Hyunyoung Shim 1 , Hae Soo Kim 1 , Honam Yoo 1 , Heonjin Choo 1 , Sangmi Kim 1 , Minchul Lee 1 , Namcheol Jeon 1 , Jihyeun Shin 1 , Keum-Whan Noh 1 , Heehyun Chang 1
1 Flash Development, SK Hynix Inc., Cheongju-si, Chungcheongbuk-do, Korea (the Republic of)

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2017-04-19   Show All Abstracts

Symposium Organizers

Andrew Kummel, University of California, San Diego
Alexander Demkov, University of Texas, Austin
John Robertson, Cambridge Univ
Shinichi Takagi, University of Tokyo
ED7.3: CMOS
Session Chairs
Robert Clark
Wednesday AM, April 19, 2017
PCC North, 100 Level, Room 131 A

8:00 AM - ED7.3.01
Selective Isotropic Etching of Silicon in Preference to Germanium and Si0.5Ge0.5

Christopher Ahles 1 , Jong Choi 1 , Richard Yang 2 , Andrew Kummel 1
1 , University of California, San Diego, La Jolla, California, United States, 2 , LAM Research, Fremont, California, United States

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8:15 AM - ED7.3.02
Reducing Fermi Level Pinning at Contacts on Ge by Germanides

Hongfei Li 1 , John Robertson 1
1 , University of Cambridge, Cambridge United Kingdom

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8:30 AM - ED7.3.03
Trap Characterization and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks

Kechao Tang 1 , Felix Palumbo 2 , Ravi Droopad 3 , Paul McIntyre 1
1 , Stanford University, Stanford, California, United States, 2 , National Scientific and Technical Research Council, Buenos Aires Argentina, 3 , Texas State University, San Marcos, Texas, United States

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8:45 AM - ED7.3.04
Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks

Kechao Tang 1 , Andrew Meng 1 , Ravi Droopad 2 , Paul McIntyre 1
1 , Stanford University, Stanford, California, United States, 2 , Texas State University, San Marcos, Texas, United States

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9:00 AM - *ED7.3.05
Bringing III-Vs into CMOS—From Epitaxy to Circuits

Lukas Czornomaz 1 , Veeresh Deshpande 1 , Eamon O'Connor 1 , Marilyne Sousa 1 , Daniele Caimi 1 , Jean Fompeyrine 1
1 , IBM Research GmbH, Ruschlikon, ZH, Switzerland

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9:30 AM -
BREAK

10:00 AM - *ED7.3.06
Reliability of Metal Gate/High-K Devices and Its Impact on CMOS Technology Scaling

Andreas Kerber 1
1 , GLOBALFOUNDRIES, Malta, New York, United States

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10:30 AM - ED7.3.07
Al2O3-HfO2 Nanolaminate Gate Oxides with Organic Precursor on Silicon Germanium

Mahmut Sami Kavrik 1 , Kasra Sardashti 1 , Iljo Kwak 1 , Scott Ueda 2 , Andrew Kummel 2 1
1 Material Science and Engineering, University of California San Diego, La Jolla, California, United States, 2 Chemical Engineering, University of California, San Diego, La Jolla, California, United States

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10:45 AM - ED7.3.08
Yttrium Passivation of Defects in GeO2 and GeO2/Ge Interfaces

Hongfei Li 1 , John Robertson 1
1 , University of Cambridge, Cambridge United Kingdom

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11:00 AM - ED7.3.09
High-Dielectric Constant Al2O3 / TiOx Nanolaminates for Next Generation Gates in Nanoscale Devices

Orlando Auciello 1 , Geunhee Lee 1 , Bo-Kuai Lai 2 , Charudatta Phatak 3 , Ram Katiyar 4
1 Materials Science and Engineering & Bioengineering, University of Texas at Dallas, Richardson, Texas, United States, 2 , Lake Shore Cryotronics, Inc., Westerville, Ohio, United States, 3 , Argonne National Laboratory, Lemont, Illinois, United States, 4 , University of Puerto Rico, San Juan, Puerto Rico, United States

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11:15 AM - ED7.3.10
DFT Molecular Dynamic Simulations of Nealy Ideal Sub-Nanometer Interface Passivation Layer for a-HfO2/SiGe Devices and Comparison to Experiment

Andrew Kummel 1 , Evgueni Chagarov 1 , Kasra Sardashti 1 , Iljo Kwak 1 , Michael Yakimov 2 , Serge Oktyabrsky 2
1 , University of California, San Diego, La Jolla, California, United States, 2 , College of NanoScience, Albany, New York, United States

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11:30 AM - *ED7.3.11
High Performance Ge and GeSn Epi Channels

C. W. Liu 1 2 , Fang-Liang Lu 1 , Yu-Shiang Huang 1 , I-Hsieh Wong 1
1 Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei Taiwan, 2 , National Nano Device Laboratories, Hsinchu Taiwan

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ED7.4: Ferroelectrics
Session Chairs
Suman Datta
Alexander Demkov
Wednesday PM, April 19, 2017
PCC North, 100 Level, Room 131 A

1:30 PM - *ED7.4.01
Ferroelectric HfO2 or ZrO2 for Non-Volatile Memory Devices

Uwe Schroeder 1 , Tony Schenk 1 , Michael Hoffmann 1 , Claudia Richter 1 , Milan Pesic 1 , Franz Fengler 1 , Stefan Slesazeck 1 , Sergei Kalinin 5 , Alfred Kersch 3 , Jacob L. Jones 4 , James LeBeau 4 , Thomas Mikolajick 1 2
1 , Namlab, Dresden Germany, 5 , Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States, 3 , UAS Munich, Munich Germany, 4 , North Carolina State University, Raleigh, North Carolina, United States, 2 , TU Dresden, Dresden Germany

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2:00 PM - ED7.4.02
Structural Study of Ferroelectric HfO2 in Metal-Insulator-Metal Stack—Lateral Grain Growth and Transition to Non-Centrosymmetric Phase

Takashi Ando 1 , John Bruley 1 , Xiao Sun 1 , Adam Pyzyna 1 , Martin Frank 1 , Vijay Narayanan 1
1 , IBM T.J. Watson Research Center, Ossining, New York, United States

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2:15 PM - ED7.4.03
Ferroelectric Capacitors with Quasi-Amorphous BaTiO3 Integrated on Silicon

Lucie Mazet 1 , Martin Frank 2 , Sylvie Schamm-Chardon 3 , Eduard Cartier 2 , Hiroyuki Miyazoe 2 , John Bruley 2 , Sang Mo Yang 4 , Sergei Kalinin 4 , Vijay Narayanan 2 , Catherine Dubourdieu 1 5
1 , Institut des Nanotechnologies de Lyon, Ecully France, 2 , IBM T.J. Watson Research Center, Yorktown Heights, New York, United States, 3 , CEMES-CNRS, Université de Toulouse, Toulouse France, 4 , Oak Ridge National Laboratory, CNMS, Oak Ridge, Tennessee, United States, 5 , Helmholtz Zentrum Berlin für Materialien und Energie, Berlin Germany

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2:30 PM -
BREAK

3:30 PM - *ED7.4.04
Ferroelectricity in Hf-Based Oxide—Negative Capacitance FETs for Steep Subthreshold Swing

Min-Hung Lee 1 , P.G. Chen 1 2 , S.T. Fan 2 , C.Y. Kuo 1 , C.-H. Tang 1 , H.H. Chen 1 , C. W. Liu 2
1 , National Taiwan Normal University, Taipei Taiwan, 2 , National Taiwan University, Taipei Taiwan

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4:00 PM - *ED7.4.05
Recent Advances in Negative Capacitance for Ultra-Low Power Computing

Asif Khan 1
1 , Georgia Institute Technology, Atlanta, Georgia, United States

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4:30 PM - ED7.4.06
Flexible Ferroelectric Hafnia Films and Devices

Hyeonggeun Yu 1 , Ching-Chang Chung 1 , Jacob L. Jones 1 , Franky So 1
1 , North Carolina State University, Gainesville, Florida, United States

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4:45 PM - ED7.4.07
Rapid Imaging of Polarization Switching in Ferroelectrics Using the Complete Information Stream from Scanning Probe Microscopes

Suhas Somnath 1 , Sergei Kalinin 1 , Stephen Jesse 1
1 , Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States

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ED7.5: Poster Session
Session Chairs
Andrew Kummel
John Robertson
Wednesday PM, April 19, 2017
Sheraton, Third Level, Phoenix Ballroom

8:00 PM - ED7.5.01
Hydrogen Silsesquioxane (HSQ) Resistance Switching Nanopillar Arrays

Wing Ng 1 , Mark Buckwell 1 , Adnan Mehonic 1 , Anthony Kenyon 1
1 , University College London, London United Kingdom

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8:00 PM - ED7.5.02
Investigation of Ferroelectric Behavior in Doped Hafnium Oxide

Irving Cashwell 1 , Aswini Pradhan 1 , Bo Xiao 1
1 , Norfolk State University, Norfolk, Virginia, United States

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8:00 PM - ED7.5.03
Dependences of Memory Characteristics on Schottky Parameters in Pt/Nb:SrTiO3 Schottky Junction Type Resistive Memory

Kentaro Kinoshita 1 2 , Shiomi Toshiki 1 , Yuuto Hagihara 1 , Satoru Kishida 1 2
1 , Tottori University, Tottori Japan, 2 , Tottori Integrated Frontier Research Center, Tottori, Tottori, Japan

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8:00 PM - ED7.5.04
Beyond the Nanoparticle—Memory Devices Using Near Atomic Structures

Febin Paul 1 , Shashi Paul 1
1 , De Montfort University, Leicester United Kingdom

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8:00 PM - ED7.5.05
Analog Memcapacitance in Pt/HfOx/n-IGZO Structure through Redistribution of Oxygen

Paul Yang 1 , Hyung Jun Kim 1 , Hong Zheng 1 , Jong-Sung Park 1 , Chi Jung Kang 1 , Tae-Sik Yoon 1
1 , Myongji University, Yongin, Gyeonggi-do Korea (the Republic of)

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8:00 PM - ED7.5.06
Strain-Induced Shift of the Electrical Properties in AlGaN/GaN Heterostructures

Wulin Tong 1 , Wu Tang 1
1 , University of Electronic Science and Technology of China, Chengdu China

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8:00 PM - ED7.5.07
Directly Observation of the Switching Behaviors in VCM-Based Ta2O5 Memristor

Jui-Yuan Chen 1 , Chun-Wei Huang 1 , Wen-Wei Wu 1
1 Materials Science and Engineering, National Chiao Tung University, HsinChu Taiwan

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8:00 PM - ED7.5.08
Effect of Displacement Damage on Tantalum Oxide Resistive Memory Devices

Joshua Holt 1 , Karsten Beckmann 1 , Zahiruddin Alamgir 1 , Jean Yang-Scharlotta 2 , Nathaniel Cady 1
1 , State University of New York Polytechnic Institute, Albany, New York, United States, 2 , Jet Propulsion Laboratory, Pasadena, California, United States

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8:00 PM - ED7.5.09
Resistive Memory Structures of Nano-Layered Al2O3

Sita Dugu 1 , Shojan Pavunny 1 , Ram Katiyar 1
1 , University of Puerto Rico, San Juan, Puerto Rico, United States

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8:00 PM - ED7.5.10
Switching Characteristic Improvement of TaOx-Based ReRAM Stack by Magnetron Sputtering Method

Yusuke Miyaguchi 1 , Shunpei Ota 1 , Kazushi Fuse 1 , Hyung-Woo Ahn 1 , Shun Manita 1 , Takehito Jimbo 1
1 , Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono Japan

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8:00 PM - ED7.5.11
Taguchi Design of Experiment Enabling the Reduction of Spikes on the Sides of Patterned Thin Films for Tunnel Junction Fabrication

Pawan Tyagi 1 , Beachrhell Jacques 1 , Edward Friebe 1 , Tobias Goulet 1 , Stanley Travers 1
1 , University of the District of Columbia, Washington, District of Columbia, United States

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8:00 PM - ED7.5.12
Polarity Dependent Resistive Switching Characteristics in Ta2O5/Ag2Se and Ag2Se/Ta2O5 Bilayer Structures

Lee Tae Sung 1
1 , Myoung Ji University, Yong in city Korea (the Republic of)

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8:00 PM - ED7.5.13
Oxygen Vacancy Electromigration versus Joule Heating in Local Programming of TiO2 RRAM Conductivity

Kechao Tang 1 , Andrew Meng 1 , Fei Hui 2 , Yuanyuan Shi 2 , Trevor Petach 1 , David Goldhaber-Gordon 1 , Mario Lanza 2 , Paul McIntyre 1
1 , Stanford University, Stanford, California, United States, 2 , Soochow University, Suzhou China

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8:00 PM - ED7.5.14
Multi-Level Organolead Halide Perovskite Resistive Random Access Memories

Feichi Zhou 1 , Yang Chai 1
1 , HK Polytechnic Universtiy, Hong Kong Hong Kong

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8:00 PM - ED7.5.16
Subsurface Engineering of Silicon for 3D Devices

Onur Tokel 1 , Ahmet Turnali 1 , Ghaith Makey 1 , Parviz Elahi 1 , Serim Ilday 1 , Tahir Colakoglu 2 , Ozgun Yavuz 1 , R. Huebner 3 , Mona Zolfaghari 2 , Ihor Pavlov 1 , Alpan Bek 2 , Rasit Turan 2 , Omer Ilday 1
1 , Bilkent University, Ankara Turkey, 2 , Middle East Technical University, Ankara Turkey, 3 Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden Germany

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8:00 PM - ED7.5.17
The Influence of Local Defects on the Magnetic Properties of NiCo2O4

Sibylle Gemming 1 2 , Matthias Zschornak 1 3 , Parul Pandey 1 , Yugandhar Bitla 4 , Ying-Hao Chu 4
1 , Helmholtz-Zentrum Dresden-Rossendorf, Dresden Germany, 2 Institute of Physics, Technische Universität Chemnitz, Chemnitz Germany, 3 Experimental Physics, TU Bergakademie Freiberg, Freiberg/S Germany, 4 , National Chiao Tung University, Hsinchu Taiwan

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8:00 PM - ED7.5.18
Reliable Resistive Switching Memory with Self-Compliance Based on Electrodeposited CuOx Multilayer

Min-Kyu Kim 1 , Jang-Sik Lee 1
1 , Pohang University of Science and Technology (POSTECH), Pohang Korea (the Republic of)

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8:00 PM - ED7.5.19
Flexible Threshold Switching Device Based on Electrochemical Deposition

Youngjun Park 1 , Jang-Sik Lee 1
1 , POSTECH, Pohang Korea (the Republic of)

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8:00 PM - ED7.5.20
First-Principles Study on Charge Trap States in Amorphous Si3N4-x

Gijae Kang 1 , Seungwu Han 1
1 , Seoul National University, Seoul Korea (the Republic of)

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8:00 PM - ED7.5.21
Resistive Switching Characteristics of All-Solution-Processed Ag/TiO2/Mo-Doped In2O3 Nonvolatile Memory Device

Sujayakumar Vishwanath 1 , Jihoon Kim 1
1 , Kongju National University, Chungcheongnam-do Korea (the Republic of)

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8:00 PM - ED7.5.22
Effect of Off-Center Ion Substitution in Morphotropic Composition Lead Zirconate Titanate

Mohan Bhattarai 1 , Shojan Pavunny 2 , Alvaro Instan 1 , James Scott 3 1 , Ram Katiyar 2
1 , Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico, United States, 2 , Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico, United States, 3 School of Chemistry and Physics, St Andrews University, St Andrews, Scotland, United Kingdom

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8:00 PM - ED7.5.23
Forming-Free Resistive Switching Characteristics of Ag/CeO2/Pt Structure

Hong Zheng 1 , Hyung Jun Kim 1 , Paul Yang 1 , Jong-Sung Park 1 , Chi Jung Kang 1 , Tae-Sik Yoon 1
1 , Myongji University, Yongin Korea (the Republic of)

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8:00 PM - ED7.5.24
Resistive Switching Properties and Behaviors in Core-Shell Ni/NiO/HfO2 Nanowire ReRAM Device

Ting Kai Huang 1 , Jui-Yuan Chen 1 , Yi-Hsin Ting 1 , Wen-Wei Wu 1
1 Materials Science and Engineering, National Chiao Tung University, Hsinchu Taiwan

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8:00 PM - ED7.5.26
Direct Observation of Resistive Switching Behavior in Core-shell Ni/NiO Nanowires Based Memristor Crossbar

Yi-Hsin Ting 1 , Jui-Yuan Chen 1 , Chun-Wei Huang 1 , Ting Kai Huang 1 , Wen-Wei Wu 1
1 Materials Science and Engineering, National Chiao Tung University, Hsinchu Taiwan

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8:00 PM - ED7.5.27
Organic Non-Volatile Memory Using Nickel Oxide Nano-Floating-Gate and Polymer Electrets

Yeon-Ju Kim 1 , Minji Kang 1 , Min Hye Lee 1 , Ye-Jin Jeon 1 , Kyeongil Hwang 1 , Kyoungtae Hwang 1 , Dong-Yu Kim 1
1 , GIST, Gwangju Korea (the Republic of)

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8:00 PM - ED7.5.28
Detection and Mapping of Static Charges in Nanometer Scale Memory Devices

Rudra Dhar 1
1 Electronics & Communication Engineering, National Institute of Technology Mizoram, Aizawl, Mizoram, India

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2017-04-20   Show All Abstracts

Symposium Organizers

Andrew Kummel, University of California, San Diego
Alexander Demkov, University of Texas, Austin
John Robertson, Cambridge Univ
Shinichi Takagi, University of Tokyo
ED7.6: 2D and Others
Session Chairs
John Conley
Thursday AM, April 20, 2017
PCC North, 100 Level, Room 131 A

8:00 AM - ED7.6.01
Cause of RRAM Device Switching Variability and its Impact on Memrisitve Dynamic Adaptive Neural Network Arrays

Karsten Beckmann 1 , Joshua Holt 1 , Nadia Suguitan 1 , Joseph Van Nostrand 2 , Nathaniel Cady 1
1 , SUNY Polytechnic Institute, Albany, New York, United States, 2 , Air Force Research Laboratory/RITB, Rome, New York, United States

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8:15 AM - ED7.6.02
The Analog Information Limit of Magnetic Domain Wall Positions in Nanowires

Sumit Dutta 1 , Saima Siddiqui 1 , Joseph Finley 1 , C. A. Ross 1 , Marc Baldo 1
1 , Massachusetts Institute of Technology, Cambridge, Massachusetts, United States

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8:30 AM - *ED7.6.03
Tunnel FETs—Vertical or Lateral?

Huili Xing 1 , Rusen Yan 1 , Mingda Li 1 , Suresh Vishwanath 1 , Xiang Li 1 , Hyunjea Lee 1 , Randall Feenstra 2 , Debdeep Jena 1
1 School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, United States, 2 Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States

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9:00 AM - *ED7.6.04
2D Semiconductor Electronics—Advances, Challenges and Opportunities

Ali Javey 1
1 , University of California, Berkeley, Berkeley, California, United States

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9:30 AM -
BREAK

10:00 AM - *ED7.6.05
Graphene and Beyond—Creating and Exploring Atomically Thin Materials

Joshua Robinson 1
1 , The Pennsylvania State University, University Park, Pennsylvania, United States

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10:30 AM - ED7.6.06
Quasi-2D β-Ga2O3 Field-Effect Transistors with Hexagonal Boron Nitride Gate Dielectric

Janghyuk Kim 1 , Sooyeoun Oh 1 , Jihyun Kim 1
1 , Korea University, Seoul Korea (the Republic of)

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10:45 AM - ED7.6.07
Approaching the Quantum Conductance Limit in Carbon Nanotube Array Transistors

Gerald Brady 1 , Austin Way 1 , Nathaniel Safron 1 , Katherine Jinkins 1 , Harold Evensen 2 , Padma Gopalan 1 , Michael Arnold 1
1 , University of Wisconsin–Madison, Madison, Wisconsin, United States, 2 Engineering Physics, University of Wisconsin-Platteville, Platteville, Wisconsin, United States

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11:00 AM - *ED7.6.08
Two Dimensional Materials for Electronic Devices

Seongjun Park 1
1 , Samsung Advanced Institute of Technology, Suwon-si, Gyeonggi-do Korea (the Republic of)

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11:30 AM - ED7.6.09
Internal Photoemission Spectroscopy Measurement of Energy Barriers between Amorphous Metals and High-K Dielectrics

Melanie Jenkins 1 , Dustin Austin 1 , John McGlone 1 , L. Wei 2 , Nhan Nguyen 2 , John Wager 1 , John Conley 1
1 School of EECS, Oregon State University, Corvallis, Oregon, United States, 2 SDM Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland, United States

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11:45 AM - ED7.6.10
All-Transparenet and Flexible Schottky Barrier Transistors and Logics Based on Ion Gel-Gated Graphene/Metal Oxide Heterostructure

Seong Chan Kim 1 , JaeHoon Park 1 , Jeong Ho Cho 1
1 , Sungkyunkwan University, Suwon Korea (the Republic of)

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ED7.7: TFET
Session Chairs
Lukas Czornomaz
Huili Xing
Thursday PM, April 20, 2017
PCC North, 100 Level, Room 131 A

1:30 PM - *ED7.7.01
The Impact of Contact Deposition Ambient on the Interfacial Chemistry of 2D Materials

Robert Wallace 1
1 , University of Texas at Dallas, Richardson, Texas, United States

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2:00 PM - ED7.7.02
Vertical InAs/GaAsSb/GaSb Tunneling Field-Effect Transistors on Si with Sub 50 mV/dec. Operation

Elvedin Memisevic 1 , Johannes Svensson 1 , Markus Hellenbrand 1 , Erik Lind 1 , Lars-Erik Wernersson 1
1 , Lund University, Lund Sweden

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2:15 PM - ED7.7.03
Band Engineering, Doping and Tunnel FETs with InSe

Yuzheng Guo 1 , John Robertson 2
1 , University of Swansea, Swansea United Kingdom, 2 Engineering Department, University of Cambridge, Cambridge United Kingdom

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2:30 PM - *ED7.7.04
2D Crystals for Smart Life

Kaustav Banerjee 1
1 , University of California, Santa Barbara, Santa Barbara, California, United States

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3:00 PM -
BREAK

3:30 PM - *ED7.7.05
Exploring Interfacial Properties of Pristine MoS2 MOS Interface

Mitsuru Takenaka 1 2 , Shinichi Takagi 1 2
1 , The University of Tokyo, Tokyo Japan, 2 , JST-CREST, Tokyo Japan

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4:00 PM - *ED7.7.06
ON Current Boosting Technology for Si-Based Tunnel Field-Effect Transistors Utilizing Isoelectronic Trap

Takahiro Mori 1
1 , National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Japan

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4:30 PM - ED7.7.07
Probing the Nanostructure in State-of-the-Art FinFET Devices

Pritesh Parikh 1 , Corey Senowitz 3 , Don Lyons 3 , Michael DiBattista 3 , Arun Devaraj 2 , Y. Shirley Meng 1
1 , University of California, San Diego, La Jolla, California, United States, 3 , Qualcomm Technologies Inc., San Diego, California, United States, 2 Physical and Computational Sciences Directorate, Pacific Northwest National Lab, Richland, Washington, United States

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4:45 PM - ED7.7.08
Charge Transition Levels in ZrO2 and Si:ZrO2 Interfacial Layer Probed by DLTS

Arvind Kumar 1 , Sandip Mondal 1 , KSR Koteswara Rao 1
1 Physics, Indian Institute of Science, Bangalore, Karnataka, India

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2017-04-21   Show All Abstracts

Symposium Organizers

Andrew Kummel, University of California, San Diego
Alexander Demkov, University of Texas, Austin
John Robertson, Cambridge Univ
Shinichi Takagi, University of Tokyo
ED7.8: Processing and Others
Session Chairs
Alexander Demkov
John Robertson
Friday AM, April 21, 2017
PCC North, 100 Level, Room 131 A

8:45 AM - ED7.8.02
How Do the Electrodes Affect the Electrical Response of a M/La2NiO4/M' Memristive Device?

Klaasjan Maas 1 , Dolors Pla Asesio 1 , Sarunas Bagdzevicius 1 , Michel Boudard 1 , Quentin Rafhay 2 , Carmen Jimenez 1 , Monica Burriel 1
1 , Univ Grenoble Alpes, CNRS, LMGP, Grenoble France, 2 , Univ Grenoble Alpes, CNRS, IMEP-LAHC, Grenoble France

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9:00 AM - ED7.8.03
Structural Properties of Cerium Dioxide Film Prepared by Atomic Layer Deposition on TiN and Si Substrates

Silvia Vangelista 1 , Rossella Piagge 2 , Satu Ek 3 , Tiina Sarnet 3 , Gabriella Ghidini 2 , Alessio Lamperti 1
1 , IMM-CNR, MDM unit, Agrate Brianza Italy, 2 , STMicroelectronics, Agrate Brianza (MB) Italy, 3 , Picosun Oy, Espoo Finland

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9:15 AM - ED7.8.04
Characterization of Low Temperature Thermal ALD BN on Si0.7Ge0.3(001)

Steven Wolf 1 , Mary Edmonds 1 , Kasra Sardashti 1 , Max Clemons 1 , Ellie Yieh 2 , Srinivas Nemani 2 , Daniel Alvarez 3 , Andrew Kummel 1
1 , University of California, San Diego, La Jolla, California, United States, 2 , Applied Materials, Santa Clara, California, United States, 3 , Rasirc, Inc, San Diego, California, United States

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