2019 MRS Spring Meeting & Exhibit

Symposium EP09 : Devices and Materials to Extend the CMOS Roadmap for Logic and Memory Applications

2019-04-23   Show All Abstracts

Symposium Organizers

Rinus Lee, GlobalFoundries
Kah-Wee Ang, National University of Singapore
Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin
John Robertson, Cambridge University

Symposium Support

Applied Materials, Inc.
EP09.01: Ferroelectric HfO2
Session Chairs
Rinus Lee
John Robertson
Tuesday AM, April 23, 2019
PCC North, 200 Level, Room 224 B

10:30 AM - *EP09.01.01
Steep-Slope Devices with New Operation Mechanisms for Ultra-Low-Power Applications

Qianqian Huang1,Ru Huang1,Huimin Wang1,Yang Zhao1,Cheng Chen1,Yangyuan Wang1

Peking University1

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11:00 AM - *EP09.01.02
Negative Capacitance in Ferroelectric Hafnium Oxide

Thomas Mikolajick1,2,Uwe Schroeder1,Michael Hoffmann1,Benjamin Max2,Stefan Slesazeck1

NaMLab1,Technische Universität Dresden2

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11:30 AM - *EP09.01.03
A Ferroelectric Semiconductor Field-Effect Transistor

Peide Ye1

Purdue University1

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EP09.02: 2D Materials
Session Chairs
Tony Low
John Robertson
Tuesday PM, April 23, 2019
PCC North, 200 Level, Room 224 B

1:45 PM - *EP09.02.01
Prospects and Challenges of 2D Materials and Devices

Won Jong Yoo1

Sungkyunkwan University1

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2:15 PM - *EP09.02.02
Theoretical Exploration of Energy Efficient Spin Transduction and Switching

Tony Low1

University of Minnesota1

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2:45 PM - EP09.02.03
STM Investigation of Graphene/Few-Layer Molybdenum Disulfide Memristor Devices

Jesse Thompson1,Tania Roy1,Masa Ishigami1

University of Central Florida1

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3:00 PM -
BREAK


3:30 PM - *EP09.02.04
2D Semiconductor Electronics—Advances, Challenges and Opportunities

Ali Javey1

University of California, Berkeley1

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4:00 PM - *EP09.02.05
Contact Engineering for 2D Field-Effect Transistors

Po-Wen Chiu1,2,Chun-Hao Chu1,Chao-Hui Yeh1

National Tsing Hua University1,Academia Sinica2

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4:30 PM - EP09.02.06
Reducing Contact Resistances, Unpinning Femi Levels and Understanding Schottky Barriers

John Robertson2,Yuzheng Guo1

Swansea University1,Cambridge University2

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EP09.03: Poster Session: Devices and Materials to Extend the CMOS Roadmap for Logic and Memory Applications
Session Chairs
Catherine Dubourdieu
Rinus Lee
John Robertson
Tuesday PM, April 23, 2019
PCC North, 300 Level, Exhibit Hall C-E

5:00 PM - EP09.03.01
MEMS Process and Characterization for Strain-Engineered 2D Materials

Edgar Acosta1,Mariana Martinez1,Aldo Vidaña1,Sergio Almeida2,Jose Mireles3,David Zubia1

University of Texas at El Paso1,University of California, Berkeley2,Universidad Autónoma de Ciudad Juárez3

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5:00 PM - EP09.03.02
Application-Driven Perovskite Thin Films with Oxygen Vacancies Controlled

Pratheek Gopalakrishnan1,Nikoleta Theodoropoulou2,Ethan Ahn1

The University of Texas at San Antonio1,Texas State University2

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5:00 PM - EP09.03.03
Single- and Double-Gate Synaptic Transistor with a TaOx Gate Insulator and an IGZO Semiconductor Channel Layer

Keonwon Beom1,Paul Yang1,Daehoon Park1,Minju Kim1,Sunki Kim1,Hyung Jun Kim1,Chi Jung Kang1,Tae-Sik Yoon1

Myongji University1

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5:00 PM - EP09.03.04
Multiscale Modeling Framework for 2D-Material MOS Transistors

Madhuchhanda Brahma1,Santanu Mahapatra1

Indian Institute of Science, Bangalore1

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5:00 PM - EP09.03.05
Suppression of Defects at High-K/SiGe Interface with Monolayer Si ALD Deposition

Harshil Kashyap1,Mahmut Kavrik1,Victor Wang1,Andrew Kummel1

University of California, San Diego1

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5:00 PM - EP09.03.07
Influence of Intermixing on Perpendicular Magnetic Anisotropy of Ion-Beam-Deposited CoFeB
MTJs for STT-RAM

Tania Henry1,Narasimhan Srinivasan1,Katrina Pietruski1,Vincent Ip1,Frank Cerio1

Veeco Instruments Inc1

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5:00 PM - EP09.03.08
Role of Hypochlorous Acid in Solution-Processed P-Type Oxide Thin-Film Transistors for Oxide Semiconductor-Based CMOS Logic

Jusung Chung1,Tae Soo Jung1,Heesoo Lee1,Hee Jun Kim1,Jin Hyeok Lee1,Hyun Jae Kim1

Yonsei University1

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5:00 PM - EP09.03.09
Ge2Se3/Ge2Se3-M (M = Sn, Al, Ti, W, Cr, Pb, Cu, C)-Based Optically-Gated Transistor—M Influence on Optical and Electrical Properties

Md Faisal Kabir1,Randall Bassine1,Kristy Campbell1

Boise State University1

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5:00 PM - EP09.03.10
MoTe2 p-n Junction Formed via Edge Contact and Oxidation

Changsik Kim1,Won Jong Yoo1

Sungkyunkwan University1

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5:00 PM - EP09.03.11
Nonvolatile Capacitance Changes in Metal-Oxide-Semiconductor Device with Resistive Switching Floating-Gate Structure for Nonvolatile Memory and Programmable Logic Device Application

Minju Kim1,Daehoon Park1,Keonwon Beom1,Paul Yang1,Sunki Kim1,Hyung Jun Kim1,Tae-Sik Yoon1

Myongji University1

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5:00 PM - EP09.03.14
Influence of the Type of Chalcogen (Ch) Atom on the Electrical Properties of a Ge2Se3/Sn-Ch Memristive Device

Pradeep Kumar Kumaravadivel1,Kristy Campbell1

Boise State University1

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5:00 PM - EP09.03.15
Enhancement of Electrical Properties for Black Phosphorus Using the via Contacts Embedded in h-BN

Myeongjin Lee1,Won Jong Yoo1

Sungkyunkwan University1

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5:00 PM - EP09.03.16
Giant Electroresistance Effect in Single-Crystalline Lithium Niobate Thin Films Enabled by Domain Wall Control

Haidong Lu1,J.P.V. McConville2,P. Chaudhary1,A. Lipatov3,Alexander Sinitskii3,Ursel Bangert4,Michele Conroy4,Kalani Moore4,Alexei Gruverman1,Marty Gregg2

University of Nebraska–Lincoln1,Queen’s University Belfast2,University of Nebraska-Lincoln3,University of Limerick4

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5:00 PM - EP09.03.17
Transport Analysis of 4H-SiC Power Devices Using Full-Band Ensemble Monte Carlo Method

Chi-Yin Cheng1,Dragica Vasileska1

Arizona State University1

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5:00 PM - EP09.03.19
Manipulating the Electrochemical Metallization Cell Kinetics by the Anion Electrode and Tunable Electrolyte

Ziyang Zhang1,Yaoyuan Wang1,Huanglong Li1,Luping Shi1

Tsinghua University1

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5:00 PM - EP09.03.20
Bidirectional and Multilevel Threshold Switching of Ag-Dielectrics Diffusive Devices for Neuromorphic Computing Applications

Yaoyuan Wang1,Ziyang Zhang1,Shuang Wu1,Lei Tian1,Huanglong Li1,Luping Shi1

Tsinghua University1

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5:00 PM - EP09.03.21
Optoelectronic CMOS Transistors—Performance Advantages for Sub-7nm ULSI, RF ASIC, Memories and Power MOSFETs

James Pan1

Advanced Enterprise and License Company1

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5:00 PM - EP09.03.22
Atomic Force High Frequency Phonons Nonvolatile Dynamic Random-Access Memory Compatible with Sub-7nm ULSI CMOS Technology

James Pan1

Advanced Enterprise and License Company (AELC)1

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5:00 PM - EP09.03.23
Generic 2D Schrödinger-3D Poisson Solver for AlGaN/GaN Nanowire FinFETs

Viswanathan Naveen Kumar1,Dragica Vasileska1

Arizona State University1

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5:00 PM - EP09.03.24
Observation of Threshold and Resistive Switching Behaviors in Epitaxially Regrown GaN p-n Diodes by MOCVD

Tsung-Han Yang1,Houqiang Fu1,Kai Fu1,Xuanqi Huang1,Hong Chen1,Jossue Montes1,Chen Yang1,Jingan Zhou1,Yuji Zhao1

Arizona State University1

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5:00 PM - EP09.03.28
Performance Degradation Due to Nonlocal Heating Effects in Resistive ReRAM Memory Arrays

Mohammad Al-Mamun1,Marius Orlowski1

Virginia Tech1

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5:00 PM - EP09.03.29
Suppression of Gate-Induced Drain Leakage in Single-Gate Feedback Field Effect Transistors

Doohyeok Lim1,Sangsig Kim1

Korea University1

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5:00 PM - EP09.03.30
Introducing a Single MOF Crystal into a Micro CBRAM Device by a Selective Growth Method of MOF

Atsushi Shimizu1,Kentaro Kinoshita1,Yusuke Nakaune1,Hisashi Shima2,Makoto Takahashi2,Yasuhisa Naitoh2,Hiro Akinaga2

Tokyo University of Science1,National Institute of Advanced Industrial Science and Technology2

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2019-04-24   Show All Abstracts

Symposium Organizers

Rinus Lee, GlobalFoundries
Kah-Wee Ang, National University of Singapore
Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin
John Robertson, Cambridge University

Symposium Support

Applied Materials, Inc.
EP09.04: RRAM
Session Chairs
Peide Ye
Wednesday AM, April 24, 2019
PCC North, 200 Level, Room 224 B

8:00 AM - EP09.04.01
Current Density and Electric Field Decomposition During Nonlinear Electronic Instabilities

Suhas Kumar1,R. Stanley Williams1

HP Labs1

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8:30 AM - *EP09.04.03
Reliable Integrated HfO2 RRAM—Material Insights and Filaments Confinement

Gang Niu1,Pauline Calka2,Eduardo Perez2,Markus Andreas Schubert2,Wei Ren1,Zuo-Guang Ye1,Lambert Alff3,Christian Wenger2,Thomas Schroeder2

Xi'an Jiaotong University1,IHP2,Technische Universität Darmstadt3

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9:00 AM - *EP09.04.04
Device and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-Point Memory Technology

Shimeng Yu1,Jiyong Woo1

Georgia Institute of Technology1

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9:30 AM -
BREAK


EP09.05/EP08.06: Joint Session: Neuromorphic Devices
Session Chairs
Catherine Dubourdieu
Kotaro Makino
Wednesday AM, April 24, 2019
PCC North, 200 Level, Room 224 B

10:00 AM - *EP09.05.01/EP08.06.01
Device and Materials Requirements for Neuromorphic Computing

Raisul Islam1,Haitong Li1,Pai-Yu Chen2,Weier Wan1,Hong-Yu Chen3,Bin Gao4,Huaqiang Wu4,Shimeng Yu5,Krishna Saraswat1,H.S. Philip Wong1

Stanford University1,Arizona State University2,GigaDevice Semiconductor Inc.3,Tsinghua University4,Georgia Institute of Technology5

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10:30 AM - EP09.05.02/EP08.06.02
Emulating Biological Synaptic Behavior for Ultra-Low Power Neuromorphic Applications Using MoS2/Graphene Heterojunctions

Adithi Pandrahally Krishnaprasad Sharada1,Nitin Choudhary1,Sonali Das1,Durjoy Dev1,Hirokjyothi Kalita1,Hee-Suk Chung2,YeonWoong Jung1,Tania Roy1

University of Central Florida1,Korea Basic Science Institute2

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10:45 AM - EP09.05.03/EP08.06.03
Ferroelectric Spiking Neurons for Unsupervised Clustering

Zheng Wang1,Brian Crafton1,Jorge Gomez2,Ruijuan Xu3,Aileen Luo3,Zoran Krivokapic4,Lane W. Martin3,Suman Datta2,Arijit Raychowdhury1,Asif Khan1

Georgia Institute of Technology1,University of Notre Dame2,University of California, Berkeley3,Consultant4

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11:00 AM - EP09.05.04/EP08.06.04
Parallel Programming of an Ionic Floating-Gate Memory Array for Scalable Neuromorphic Computing

Elliot Fuller1,Scott Keene2,Armantas Melianas2,Zhongrui Wang3,Sapan Agarwal1,Yiyang Li1,Yaakov Tuchman2,Conrad James1,Matthew Marinella1,Joshua Yang3,Alberto Salleo2,Alec Talin1

Sandia National Laboratories1,Stanford University2,University of Massachusetts Amherst3

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11:15 AM - EP09.05.05/EP08.06.05
Correlation Between Traps Jumping Distance and Gradual Conductance Change Under Different Conductance Update Schemes in HfOx-based Memristive Devices

Putu Dananjaya1,Desmond Loy1,Xiao Liang Hong1,Wen Siang Lew1

Nanyang Technological University1

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11:30 AM - EP09.05.06/EP08.06.06
Memristive Behavior in Core-Shell Nanowire Networks for Neuromorphic Architectures

Shangradhanva Eswara Vasisth1,Jadie Palenzuela1,Hiraku Maruyama1,Juan Nino1

University of Florida1

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11:45 AM - EP09.05.07/EP08.06.07
Ultralow Power Dual Gated Sub-Threshold Oxide Neuristors—An Enabler for Higher Order Neuronal Temporal Correlations

Rohit John1,Nidhi Tiwari1,Anh Chien Nguyen1,Arindam Basu1,Nripan Mathews1

Nanyang Technological University1

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EP09.06: MoS2
Session Chairs
Won Jong Yoo
Wednesday PM, April 24, 2019
PCC North, 200 Level, Room 224 B

1:30 PM - *EP09.06.01
Excitons in Two-Dimensional Semiconductors “Talking” to Their Environment

Kirill Bolotin1

Freie Universitaet Berlin1

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2:00 PM - EP09.06.02
Near-Ideal 2D/2D and 2D/High-Κ Dielectric Interfaces Extracted Using the Conductance Method

Durjoy Dev1,Adithi Pandrahally Krishnaprasad Sharada1,Tania Roy1

University of Central Florida1

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2:15 PM - EP09.06.03
Effect of Dose Rate on Interstitial-Vacancy Recombination in Silicon During Helium Implantation

Katherine Haynes1,Xunxiang Hu2,Brian Wirth2,3,Christopher Hatem4,Kevin Jones1

University of Florida1,Oak Ridge National Laboratory2,The University of Tennessee, Knoxville3,Applied Materials, Inc.4

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2:30 PM -
BREAK


EP09.07: RRAM Materials
Session Chairs
Catherine Dubourdieu
Gang Niu
Wednesday PM, April 24, 2019
PCC North, 200 Level, Room 224 B

3:30 PM - EP09.07.01
New Generation of ReRAM Based on Oxidized Carbon Nanofibers

Paolo Bondavalli1,Louiza Hamidouche1,Marie-Blandine Martin1,Aikaterini Trompeta2,Konstantinos Charitidis2,Christophe Galindo1,Elias Koumoulos2

Thales Research and Technology1,National Technical University of Athens2

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3:45 PM - EP09.07.02
Impacts of an Asymmetric Stack Structure in TaOx-Based ReRAM Cells on Resistive Switching Characteristics

Toshiki Miyatani1,Yusuke Nishi1,Tsunenobu Kimoto1

Kyoto University1

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4:00 PM - EP09.07.03
Non-Volatile Electrochemical Memory Operating Near the Thermal Voltage Limit

Yiyang Li1,Elliot Fuller1,Shiva Asapu2,Sapan Agarwal1,Joshua Yang2,Alec Talin1

Sandia National Laboratories1,University of Massachusetts Amherst2

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4:15 PM - EP09.07.04
Spatial Distribution of Conductive Filaments and the Effect of Device Geometry

Sanjoy Nandi1,Shimul Nath1,Shuai Li1,Robert Elliman1

Australian National University1

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4:30 PM - EP09.07.05
Effects of Crystallinity and Oxygen Composition on Forming Characteristics in TMO-Based Resistive Switching Cells

Yusuke Nishi1,Masaya Arahata1,Tsunenobu Kimoto1

Kyoto University1

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4:45 PM - EP09.07.06
Nearest Neighbor Hopping in High Retention MgO-Based Resistive Switching Devices in the High Resistance State

Desmond Loy1,2,Putu Dananjaya1,Wai Cheung Law1,2,Gerard Lim1,Funan Tan1,2,Xiao Liang Hong1,Samuel Chow1,2,Eng Huat Toh2,Wen Siang Lew1

Nanyang Technological University1,Globalfoundries Singapore Pte Ltd2

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2019-04-25   Show All Abstracts

Symposium Organizers

Rinus Lee, GlobalFoundries
Kah-Wee Ang, National University of Singapore
Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin
John Robertson, Cambridge University

Symposium Support

Applied Materials, Inc.
EP09.08: ALD, High K, Ge, 2D and Others
Session Chairs
Rinus Lee
John Robertson
Thursday AM, April 25, 2019
PCC North, 200 Level, Room 224 B

8:00 AM - EP09.08.01
Coexistence of Interface-Type and Filament-Type Resistive Switching Phenomena in Ti/Pr0.7Ca0.3MnO3/Pt Cells

Naoki Kanegami1,Yusuke Nishi1,Tsunenobu Kimoto1

Kyoto University1

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8:15 AM - EP09.08.02
Milisecond Flash Lamp Annealing for the Ferroelectric Phase Stabilization in HfxZr1-xO2

Mattia Halter1,2,Éamon O’Connor1,Felix Eltes1,Youri Poppoff1,3,Marilyne Sousa1,Stefan Abel1,Bert Offrein1,Jean Fompeyrine1

IBM Research GmbH1,Swiss Federal Institute of Technology Zurich2,EMPA - Swiss Federal Laboratories for Materials Science and Technology3

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8:30 AM - EP09.08.03
Crystal Structure Identification in Mixed-Phase HfO2-ZrO2 Nanolaminates by EXAFS Analysis

Martin McBriarty1,Vijay Narasimhan1,Stephen Weeks1,Huazhi Fang1,Apurva Mehta2,Ryan Davis2,Trevor Petach2,Michael Toney2,Sergey Barabash1,Karl Littau1

Intermolecular, Inc.1,SLAC National Accelerator Laboratory2

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8:45 AM - EP09.08.04
Unravelling Ferroelectric Switching of a Nanometric HfO2:Si Layer by First-Principles Simulation

Philippe Blaise1

CEA-LETI1

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9:00 AM - *EP09.08.05
Time-Resolved Simulation of the Negative Capacitance Stage Emerging at the Ferroelectric/Semiconductor Hetero-Junction

Norifumi Fujimura1

Osaka Prefecture University1

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9:30 AM -
BREAK


10:00 AM - *EP09.08.06
Advanced MOSFETs and TFETs Using Alternative Semiconductors for Ultralow Power Logic Applications

Shinichi Takagi1,Kimihiko Kato1,Kei Sumita1,Kwangwon Jo1,Ryotaro Takaguchi1,Dae-Hwan Ahn1,Kasidit Toprasertpong1,Mitsuru Takenaka1

University of Tokyo1

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10:30 AM - *EP09.08.07
Materials and Process Innovations for High-Performance Strained Silicon-Germanium FinFETs with High Ge Content

Takashi Ando1,Pouya Hashemi1,Eduard Cartier1,John Bruley1,Vijay Narayanan1

IBM T.J. Watson Research Center1

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11:00 AM - EP09.08.08
Rapid Ge Diffusion During High Temperature Oxidation of Si/SiGe Pillars for the Formation of Si/SiGe Quantum Dots

Emily Turner1,Keshab Sapkota2,Christopher Hatem3,Kevin Jones1,George Wang2

University of Florida1,Sandia National Laboratories2,Applied Materials, Inc.3

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11:15 AM - EP09.08.09
Impact of Germanium Doping on the Mechanical Strength of Ultra-Low Oxygen Concentration Silicon Wafers

Junnan Wu1,2,Robert Standley2,Katharine Flores1

Washington University in St. Louis1,MEMC, LLC2

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