Perovskite solar cells promise to yield efficiencies beyond 30% by further improving the quality of the materials and devices. Electronic defect passivation, and suppression of detrimental charge-carrier recombination at the different device interfaces has been used as a strategy to achieve high performance perovskite solar cells.In this presentation, I will discuss the role of electronic defects and how these can be passivated to improve charge-carrier lifetimes and to achieve high open-circuit voltages. I will discuss the characterization of 2D and 3D defects, such as grain boundaries, crystal surface defects, and precipitate formation within the films, by synchrotron-based techniques. The importance of interfaces and their contribution to detrimental recombination will also be discussed. As a result of these contributions to better understanding 2D and 3D defects, the perovskite solar cell field has been able to improve device performance. Albeit the rapid improvements in performance, there is still a need to improve these defects to push these solar cells beyond the current state-of-the-art.
Non-radiative recombination loss specially at the interfaces is a big challenge in the perovskite solar cells (PSCs) and affect the performance, stability, reproducibility of devices. Engineering the interfacial regions of the PSCs using an interface layer or additives is an effective strategy to address this issue. Our new findings report on a major breakthrough in the PSCs research. We discovered amazingly effective ways to mitigate the radiationless recombination