Symposium EL12—Ferroic Materials and Heterostructures for Electronics and Data Storage
Following sustained research efforts over the past decades, ferromagnetic, ferroelectric, and multiferroic materials are continuing to provide an ever-changing landscape with exciting developments. For example, breakthroughs have been made in bulk and nanoscale ferroic materials, including voltage control of nanomagnetism, the emergence of robust ferroelectricity in strained ultrathin nanoscale gate dielectrics, the stabilization and manipulation of topological defects (e.g. skyrmions) in oxide ferroics, the discovery of exotic topological states in bulk ferroics, among others. Furthermore, the applications of ferroic materials are moving beyond the traditional boundaries set by electronics and data storage, manifested by the recent confluence of nanoscale ferroics, neuromorphic computing, and artificial intelligence.
This three-day symposium will cover the latest developments in ferroic materials using six sessions: (1) Magnetoelectric and multiferroic thin films and nanostructures; (2) New Frontiers in bulk ferroics; (3) Topological defects in ferroic materials; (4) Voltage control of nanomagnetism; (5) Advanced imaging techniques for ferroic nanomaterials; (6) Emergent applications of ferroic nanomaterials.
Two of us will offer tutorials that have not been covered previously, one on "Phase-field modeling of ferroic nanomaterials" (by Jiamian Hu) and one on "Imaging of ferroic nanomaterials" (by Massimo Ghidini). We expect to attract attendees from the wide community of scientists working on ferroic materials and material scientists interested in the design and synthesis of new materials, engineers interested in energy materials and spintronic devices, computer scientists interested in alternative approaches to artificial intelligence and neuromorphic computing.