James J. Coleman, University of Illinois Urbana-Champaign, United States
Strained-layer MOCVD Growth – a Paradigm Shift in Epitaxy
James J. Coleman is the Intel Alumni Endowed Chair Emeritus in electrical engineering at the University of Illinois, Urbana. He received his degrees from Illinois and joined the faculty there after working at Bell Laboratories and Rockwell International. He and his students were the first to define experimentally the ranges of wavelength, threshold current density, and reliability of MOCVD-grown 980 nm strained-layer InGaAs lasers. Other research interests include MOCVD-grown diode lasers and other photonic devices, selective-area epitaxy, and the growth processes for quantum dot lasers. Jim is a member of the US National Academy of Engineering and a Fellow of the MRS, IEEE, OSA, SPIE, APS, AAAS, and the National Academy of Inventors. He was awarded the 2021 Nishizawa Medal for “for contributions to the development of strained-layer semiconductor lasers.” Other awards include the David Sarnoff Award, the John Tyndall Award, the SPIE Technical Achievement Award, and the Nick Holonyak, Jr. Award.