Plenary Speakers


James J. ColemanUniversity of Illinois Urbana-Champaign, United States

Strained-layer MOCVD Growth – a Paradigm Shift in Epitaxy

James J. Coleman is the Intel Alumni Endowed Chair Emeritus in electrical engineering at the University of Illinois, Urbana. He received his degrees from Illinois and joined the faculty there after working at Bell Laboratories and Rockwell International. He and his students were the first to define experimentally the ranges of wavelength, threshold current density, and reliability of MOCVD-grown 980 nm strained-layer InGaAs lasers. Other research interests include MOCVD-grown diode lasers and other photonic devices, selective-area epitaxy, and the growth processes for quantum dot lasers. Jim is a member of the US National Academy of Engineering and a Fellow of the MRS, IEEE, OSA, SPIE, APS, AAAS, and the National Academy of Inventors. He was awarded the 2021 Nishizawa Medal for “for contributions to the development of strained-layer semiconductor lasers.” Other awards include the David Sarnoff Award, the John Tyndall Award, the SPIE Technical Achievement Award, and the Nick Holonyak, Jr. Award.



Kei May Lau, Hong Kong University of Science & Technology, Hong Kong

III-V/Si Photonic Integration by Lateral Epitaxy

Kei May Lau is a Research Professor at the Hong Kong University of Science & Technology (HKUST).  She received her degrees from the University of Minnesota and Rice University and served as a faculty member at the University of Massachusetts/Amherst before joining HKUST in the summer of 2000. Lau is a Fellow of the IEEE, Optica (formerly OSA), and the Hong Kong Academy of Engineering Sciences. She was also a recipient of the IPRM award, IET J J Thomson medal for Electronics, Optica Nick Holonyak Jr. Award, IEEE Photonics Society Aron Kressel Award, US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers, and Hong Kong Croucher Senior Research Fellowship. She was an Editor of the IEEE Transactions on Electron Devices and Electron Device Letters, an Associate Editor for the Journal of Crystal Growth and Applied Physics Letters. Lau’s research work focuses on monolithic integration of semiconductor devices and systems on industry-standard silicon/SOI substrates by MOCVD. 



Francesco Monitalenti, Università degli Studi di Milano Bicocca, Italy

Machine Learning Modelling of Epitaxy and Nanostructures

Author of more than 150 publications on international journals, FM started using and developing computational methods for simulating diffusion processes and crystal growth already during his PhD in Physics (University of Genoa, 1996-1999), under the supervision of Riccardo Ferrando. He then moved to the Theoretical Division of the Los Alamos National Laboratory, where he worked for two years in the group of Art Voter, helping in developing accelerated molecular dynamics methods. In 2002 he joined the Materials Science Department of the University of Milano-Bicocca as a junior faculty researcher. There, he developed an interest for semiconductor films and heterostructures. Presently he still works in the same Department, but as full Professor in Theoretical Physics of Matter and Dean of the PhD program in Materials Science and Nanotechnology. In the last few years FM embraced the Machine-Learning revolution, epitaxy being the primary focus of application so far.



Kevin Schulte, National Renewable Energy Laboratory, United States

MOVPE of Devices for Thermophotovoltaics and Laser Power Conversion

Dr. Kevin Schulte is a scientist in the High Efficiency Crystalline Photovoltaics group at the National Renewable Energy Laboratory (NREL) in Golden, Colorado, USA. He received B.S. and M.S. degrees in Chemical Engineering from Northwestern University in 2008 and 2009, respectively, and a Ph.D. in Chemical Engineering from the University of Wisconsin-Madison in 2014 where he studied defect incorporation in III-V materials grown by hydride vapor phase epitaxy (HVPE). At NREL, he researches the epitaxial growth of III-V materials and devices via metalorganic vapor phase epitaxy (MOVPE) and HVPE, seeking to increase the efficiency and reduce the cost of these devices by understanding the mechanisms that control defect incorporation in epitaxial III-V materials. He was part of a team that received an R&D 100 award for the development of dynamic HVPE, and is on the executive committee of the American Association of Crystal Growth. 






Zlatko Sitar, North Carolina State University, United States

AlN Dopant Incorporation and Activation by MOCVD





Invited Speakers

Erik Bakkers, Eindhoven University of Technology, Japan
Recent Advances in Wurtzite III-V & Hexagonal IV Epitaxy (also II-VI Heteroepitaxy)
Chirag Gupta, University of Wisconsin-Madison, United States
Vertical GaN and  Ga2O3 Power Devices enabled by MOVCD and HVPE respectively 
Motoaki Iwaya, Meiji University, Japan
Monolithic InGaN RGB Micro-LED
Jeehwa Kim, Massachusetts Institute of Technology, United States
Remote Epitaxy
Sriram Krishnamoorthy, University of California, Santa Barbara, United States
Ga2O3 MOCVD and Device Application
Maki Kushimoto, Nagoya University, Japan
UVC CW Laser Diode by Local Strain Control of Ridge Wave Guide
Bernardette Kunert, imec, Belgium 
Electrically injected InGaAs/GaAs nano-ridge laser fully processed in a 300 mm CMOS pilot line
Stefano Leone, Fraunhofer Institute for Applied Solid State Physics IAF, Germany
MOCVD of AIScN and AIYN for electronic applications 
Charles Li, Playnitride Inc., Taiwan
Challenges of MOCVD in Mass Production of micro-LEDs
Hideto Miyake, Mie University, Japan
Epitaxial Growth of AIGaN on High-Temperature Annealed  AIN Template and UV- C LED Application 
Tim Wernicke, Technische Universität Berlin, Germany 
MOCVD of UV Light Emitters