Wide Bandgap Semiconductors

Group III-Nitrides—Growth, Processing, Characterization, Theory and Devices

• Srabanti Chowdhury, University of California, Davis
• Theeradetch Detchprohm, Georgia Institute of Technology
• Alan Doolittle, Georgia Institute of Technology
• Russell Dupuis, Georgia Institute of Technology
• Daniel Ewing, Department of Energy’s Kansas City National Security Campus
• Qhalid Fareed, Texas Instruments
• Daniel Feezell, The University of New Mexico
• Hiroshi Fujioka, The University of Tokyo
• Jennifer Hite, U.S. Naval Research Laboratory
• Andrew Koehler, U.S. Naval Research Laboratory
• Xiaohang Li, King Abdullah University of Science and Technology
• Michael Manfra, Purdue University
• Siddharth Rajan, The Ohio State University
• Shadi Shahedipour-Sandvik, State University of New York Polytechnic Institute
• Andrei Vescan, RWTH Aachen University
• Christian Wetzel, Rensselaer Polytechnic Institute
• Jonathon Wierer, Lehigh University
• Huili Grace Xing, Cornell University

Silicon Carbide—Growth, Processing, Characterization, Theory and Devices

• Joshua Caldwell, Vanderbilt University
• MVS Chandrashekhar, University of South Carolina
• Sarit Dhar, Auburn University
• Michael Dudley, Stony Brook University, The State University of New York
• Daniel Ewing, Department of Energy’s Kansas City National Security Campus
• Nadeemullah Mahadik, U.S. Naval Research Laboratory
• Michael Spencer, Cornell University
• Jun Suda, Kyoto University

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