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Wide Bandgap Semiconductors

Group III-Nitrides—Growth, Processing, Characterization, Theory and Devices

  • Srabanti Chowdhury, University of California, Davis
  • Theeradetch Detchprohm, Georgia Institute of Technology
  • Alan Doolittle, Georgia Institute of Technology
  • Russell Dupuis, Georgia Institute of Technology
  • Daniel Ewing, Department of Energy’s Kansas City National Security Campus
  • Qhalid Fareed, Texas Instruments
  • Daniel Feezell, The University of New Mexico
  • Hiroshi Fujioka, The University of Tokyo
  • Jennifer Hite, U.S. Naval Research Laboratory
  • Andrew Koehler, U.S. Naval Research Laboratory
  • Xiaohang Li, King Abdullah University of Science and Technology
  • Michael Manfra, Purdue University
  • Siddharth Rajan, The Ohio State University
  • Shadi Shahedipour-Sandvik, State University of New York Polytechnic Institute
  • Andrei Vescan, RWTH Aachen University
  • Christian Wetzel, Rensselaer Polytechnic Institute
  • Jonathon Wierer, Lehigh University
  • Huili Grace Xing, Cornell University

Silicon Carbide—Growth, Processing, Characterization, Theory and Devices

  • Joshua Caldwell, Vanderbilt University
  • MVS Chandrashekhar, University of South Carolina
  • Sarit Dhar, Auburn University
  • Michael Dudley, Stony Brook University, The State University of New York
  • Daniel Ewing, Department of Energy’s Kansas City National Security Campus
  • Nadeemullah Mahadik, U.S. Naval Research Laboratory
  • Michael Spencer, Cornell University
  • Jun Suda, Kyoto University

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61st Electronic Materials Conference

June 26-28, 2019

University of Michigan
Ann Arbor, Michigan

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  • Awards
    • NIST Student Award
    • Student Award Winners
  • Exhibit
  • Officers
  • Program
    • Speakers
    • Topics
      • Electronic Materials Science and Technology
      • Energy Storage and Conversion Materials
      • Nanoscale Science and Technology
      • Organic Materials and Thin-Film Technology
      • Oxide Semiconductors and Dielectrics
      • Wide Bandgap Semiconductors