Student Award Winners

2021 63rd Electronic Materials Virtual Conference

• A F M Anhar Uddin Bhuiyan, "Orientation-Dependent Band Offsets at MOCVD Grown β-(AlxGa1–x)2O3/β-Ga2O3 Heterointerfaces," advisor Hongping Zhao, The Ohio State University
    
• Angela Cleri, "Mid-Wave to Near-IR Optoelectronic Properties and Epsilon-Near-Zero Behavior in In-Doped CdO, "advisor Jon-Paul Maria, The Pennsylvania State University
    
• Zhe (Ashley) Jian, "Electrical Properties of MOCVD-Grown AlSiO Gate Dielectric on (001) β-Ga2O3,"advisor Elaheh Ahmadi, University of Michigan
    
• Jonathan McCandless, "Stabilizing α-Ga2O3 and α-(Al,Ga)2O3 up to 900°C" advisor Debdeep Jena, Cornell University
    
• Bosun Abbas Roy-Layinde, (Poster) “Temperature Dependence of Thermophotovoltaic Conversion Using InGaAs Air-Bridge Cells,” advisor Andrej Lenert, University of Michigan

2021 NIST Uncertainty Analysis Student Award Winner

• Annatoma Arif, “Inkjet Printed 3D Metal Electrodes on Shape Memory Polymer towards Improved Electrochemical Bio-Sensing Performance,” advisor Robert Roberts, The University of Texas at El Paso

2020 62nd Electronic Materials Virtual Conference

• Eamonn Hughes, "Compositional Changes at Dislocations and Interfaces in Heteroepitaxial Semiconductors Studied by Atom Probe," advisor Kunal Mukherjee, University of California, Santa Barbara

• Wenshen Li, “Observation of Near-Ideal Reverse Leakage Current in β-Ga2O3 Schottky Barrier Diodes and Its Implications for High Electric-Field Operation," advisor Huili Grace Xing, Cornell University

• Evyn Routh, (Poster) “Device Quality In_xGa_x-1N Templates (0.07〈x〈0.10) for Optoelectronic Applications,” advisors Nadia El-Masry and Salah Bedair, North Carolina State University
  
  
• Jennifer Selvidge, "Displacing Deleterious Misfit Dislocations from the Active Regions of InAs Quantum Dot Lasers on Si," advisors Kunal Mukherjee and John Bowers, University of California, Santa Barbara 

2020 NIST Uncertainty Analysis Student Award Winner

• Prashanth R Gopalan, "Anisotropic Permittivity of β-Ga2O3 in the Terahertz band," advisor Berardi Sensale Rodriguez, The University of Utah
   

2019 61st Electronic Materials Conference

University of Michigan

• Zixuan Feng, “LPCVD Growth of Si Doped β-Ga2O3 Thin Films with Superior Room Temperature Mobilities," advisor Hongping Zhao, The Ohio State University
  
  
• Anisha Kalra, “Record High Zero-Bias External Quantum Efficiency of 88% for Al0.40Ga0.60N-Based p-i-n UV Detectors,” advisors Digbijoy N. Nath and Srinivasan Raghavan, Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science
  
  
• Max Kneiß, (Poster) “Epitaxial Stabilization of κ-Ga₂O₃ and κ-(Al_xGa_1-x)₂O₃ Thin Films for Heterostructure Device Applications by Tin-Assisted PLD on Different Substrates,” advisors Marius Grundmann and Holger von Wenckstern, Universität Leipzig, Faculty of Physics and Earth Sciences, Felix Bloch Institute for Solid State Physics
  
  
• Debarghya Sarkar, "Direct Growth of Crystalline III-Vs on Amorphous Dielectrics Using a Combination of Epitaxial and Non-Epitaxial Methods”, advisor Rehan Kapadia, University of Southern California

2018 60th Electronic Materials Conference

University of California, Santa Barbara

• Brian Haidet, “Direct Observation of Recombination Enhanced Dislocation Glide in GaAs/Si Thin Films Using Electron Channeling Contrast Imaging," advisor Kunal Mukherjee, University of California, Santa Barbara

• Anisha Kalra, (Poster) “Demonstration of High Responsivity Epitaxial β-Ga₂O₃/GaN Metal-Heterojunction-Metal (MHM) Broadband UV-A/UV-C Detector,” advisors Digbijoy N. Nath and Srinivasan Raghavan, Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science

• Kyle McNicholas, "BGaAs/GaP Heteroepitaxy for Strain-Free Luminescent Layers on Si”, advisor Seth Bank, The University of Texas at Austin

2018 NIST Uncertainty Analysis Student Award Winner

University of California, Santa Barbara

• Jimy Encomendero, “Resonant Tunneling Transport as a Sensitive Measurement of the Internal Polarization Fields in III-Nitride Tunneling Heterostructures,"  advisor Huili Grace Xing, Cornell University

2017 59th Electronic Materials Conference

University of Notre Dame

• Akanksha Gupta, “Lipid Membrane and Zinc Oxide Thin-Film Transistor Based Biosensors,” advisors Esther Gomez and Thomas Jackson, The Pennsylvania State University
   
• Kamyar Ahmadi Majlan, “Thickness Dependent Metal-Insulator Transition of a Correlated Oxide Heterostructure Integrated Directly on Si,” advisor Joseph H. Ngai,  The University of Texas at Arlington

2017 NIST Uncertainty Analysis Student Award Winner

University of Notre Dame

• Robert Rounds, “Thermal Conductivity of Bulk GaN,” advisor Zlatko Sitar, North Carolina State University

2016 58th Electronic Materials Conference

University of Delaware

• Cory C. Bomberger, "Growth and Characterization of ErAs Nanoparticles Epitaxially Embedded within GaBiAs," advisor Joshua Zide, University of Delaware
  
  
• Daniel Ironside, "Optimal Integration of Rare-Earth Monopnictide Nanostructures in III-V for High Optical Quality Applications," advisor Seth Bank, The University of Texas at Austin
  
  
• Geoffrey E. Purdum, "Traversing the Polymorphic Landscape of Core-Chlorinated Naphthalene Diimides through Tuning Molecule-Molecule, Molecule-Substrate, and Molecule-Solvent Interactions," advisor Lin Loo, Princeton University
  
  
• Lei Zhang, " Comparing Interface Defect Density vs Material Interface Charge for Gap Passivation of Inter-Digitated Back Contact Silicon Heterojunction Solar Cells," advisor Steven Hegedus, University of Delaware

2016 NIST Uncertainty Analysis Student Award Winner

University of Delaware

• Jonathan Marini, "Mg dopant incorporation efficiency in pulsed MOCVD Growth of N-polar p-GaN," advisor Fatemeh (Shadi) Shahedipour-Sandvik, SUNY Polytechnic Institute

2015 57th Electronic Materials Conference

The Ohio State University  

• Lan Yu, "Mid-Infrared Emisson from In(Ga)Sb Layers on InAs(Sb)," advisor Daniel Wasserman, University of Illinois at Urbana-Champaign
• Zeng Zhang, "Deep Level States in p-Type GaN Grown by Ammonia-Based Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition," advisor Steve Ringel, The Ohio State University
  

2015 NIST Uncertainty Analysis Student Award Winner

The Ohio State University  

• Katherine Kragh-Buetow, "Characterization of Tungsten-Nickel Simultaneous Ohmic Contacts to p- and n-type 4H-SiC," advisor Suzanne Mohney, The Pennsylvania State University

2014 56th Electronic Materials Conference

University of California, Santa Barbara

• Alan Liu, “Record Lifetimes of GaAs Based Lasers Epitaxially Grown on Silicon,” advisors John Bowers and Art Gossard, University of California, Santa Barbara
• Scott Maddox, “Effects of Growth Rate, Substrate Temperature, and a Bi Surfactant on Doping Limits in InAs: Si Grown by Molecular Beam Epitaxy,” advisor Seth Bank, University of Texas at Austin
• Kevin Schulte, “Key Factors Controlling EL2 Incorporation in n-GaAs Layers Grown by Hydride Vapor Phase Epitaxy,” advisor Thomas Kuech, University of Wisconsin-Madison

2014 NIST Uncertainty Analysis Student Award Winner

University of California, Santa Barbara

• Rusen Yan, “Extraction of Thermal Conductivity in Suspended MoS₂ by Raman Spectroscopy,” advisor Huili Grace Xing, University of Notre Dame

2013 55th Electronic Materials Conference

University of Notre Dame

• Mark T. Durniak, “Cubic GaN Templates for LED Applications,” advisor Christian Wetzel, Rensselaer
• Benjamin Leung, “Single Crystal GaN Growth on SiO₂ by Evolutionary Selection,” advisor Jung Han, Yale University
• James R. Riley, “Atom Probe Tomography of Polar, Nonpolar, and Semipolar InGaN Quantum Wells,” advisor Lincoln Lauhon, Northwestern University

2012 54th Electronic Materials Conference

The Pennsylvania State University

• Santino Carnevale, “Polarization-Induced pn-Diodes in Wide Band Gap Nanowires with Ultraviolet Electroluminescence,” advisor Roberto Myers, The Ohio State University
• Hari Nair, “Thermal Annealing Induced Optical Quality Enhancement in GaSb-Based Dilute-Nitrides,” advisor Seth Bank, University of Texas at Austin
• Christopher Yerino, “Tensile Strained III-V Quantum Dots on a (110) Surface: Morphology and Optical Properties,” advisor Minjoo Larry Lee, Yale University

2011 53rd Electronic Materials Conference

University of California, Santa Barbara

• Yan Mui Kitty Yeung, "Tuning of Plasmonic Cavity Resonances Using Atomic Layer Deposition," advisor Evelyn Hu, Harvard University
• Joshua Shapiro, "Structural Characterization of InGaAs Axial Inserts in GaAs Catalyst-Free Nanopillars Grown by Selective-Area MOCVD," advisor Diana Huffaker, University of California, Los Angeles

2010 52nd Electronic Materials Conference

University of Notre Dame

• Ashish Baraskar, "In Situ Ohmic Contacts to p-InGaAs," advisors Mark Rodwell and Arthur Gossard, University of California, Santa Barbara
• Anthony Rice, "Morphological Development of Homoepitaxial AlN Thin Films Grown by MOCVD," advisor Zlatko Sitar, North Carolina State University
• James Riley, "Pulsed-Laser Atom Probe Tomographic Analysis of Ge-Ge/Co/Mn," advisor Lincoln Lauhon, Northwestern University

2009 51st Electronic Materials Conference

The Pennsylvania State University

• Sebastien Vincent, "Study of the Formation, Evolution and Dissolution of Interfacial Bonding Defects Based on the Hydrogen Storage and Diffusion Mechanisms," advisor Hubert Renevier, Institut Polytechnique de Grenoble
• John Simon, "Polarization Enhanced p-Type Conductivity in Graded N-Face AlGaN Slabs," advisor Debdeep Jena, University of Notre Dame
• Charles Brooks, "Growth and Microstructure of Homoepitaxial Strontium Titanate Thin Films by Molecular-Beam Epitaxy," advisor Darrell Schlom, The Pennsylvania State University
• Shriram Shivaraman, "Epitaxial Graphene Micro-Bridges," advisor Michael Spencer, Cornell University

2008 50th Electronic Materials Conference

University of California, Santa Barbara

• J. Pedrazzani, "Virtual Elimination of Surface Leakage Currents in Unpassivated IR Photodetectors," advisor Gary Wicks, University of Rochester

2007 49th Electronic Materials Conference

University of Notre Dame

• Michael Mori, "Lattice-Engineering for Monolithic Visible Yellow-Green Light Emitters," advisor Eugene A. Fitzgerald, Massachusetts Institute of Technology
• Andrea Corrion, "Properties of GaN Buffer Layers on 6H-SiC Grown by Ammonia Molecular Beam Epitaxy for High Electron Mobility Transistors," advisor Jim Speck, University of California, Santa Barbara
• Lee Mosbacker, "Correlation of Bulk Native Point Defects and Metal Reactivity on ZnO Using Depth Resolved Cathodoluminescence Spectroscopy," advisor Len Brillson, The Ohio State University

2006 48th Electronic Materials Conference

The Pennsylvania State University

• Shadi Dayeh, "Growth Mechanism and Optimization of InAs Nanowires Synthesized by OMVPE, advisors Deli Wang and Edward T. Yu, University of California, San Diego
• Nathan Yoder, "Investigating the Stability of Organic Molecules Bound to Semiconductor Surfaces with Low Temperature UHV-STM ," advisor Mark C. Hersam, Northwestern University
• Xiaodong Chen, "Direct Write Composition Patterning of InGaN during Molecular Beam Epitaxy," advisor Lester Eastman, Cornell University

2005 47th Electronic Materials Conference

University of California, Santa Barbara

• Eric Krauland, “Composition and Contextual Influence of Peptide Specificity for Inorganic Material Surfaces,” advisor Angela Belcher, Massachusetts Institute of Technology
• Christiane Poblenz, “Effect of AlN Nucleation Layer Growth Conditions on Buffer Leakage in AlGaN/GaN High Electron Mobility Transistors Grown by Molecular Beam Epitaxy,” advisor Jim Speck, University of California, Santa Barbara
• Nate Quitoriano, “Defect Behavior in Metamorphic Buffer Layers on Lattice Constants Near InP Grown by Metal Organic Chemical Vapor Deposition on GaAs,” advisor Gene Fitzgerald, Massachusetts Institute of Technology
• Siddharth Rajan, “Structural and Electrical Characterization of N-Face GaN Grown on C-Face SiC by MBE,” advisor Umesh Mishra, University of California, Santa Barbara

2004 46th Electronic Materials Conference

University of Notre Dame

• Jeff Gleason, “Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Films,” advisor Rachel Goldman, University of Michigan
• Tihomir Gugov, “Transmission Electron Microscopy Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy,” advisor Jim Harris, Stanford University
• Jessica Hilton, “Reaction Kinetics, Thermodynamics, and Growth Characteristics of Ultrathin Mn Films on GaAs (001),” advisor Chris Palmstrom, University of Minnesota
• Vincenzo Lordi, “Electroabsorption and Band Edge Optical Properties of GaInNAsSb Quantum Wells around 1550 nm,” advisor Jim Harris, Stanford University