Plenary Speakers

Shigefusa Chichibu, Tohoku University
Impact of Vacancy Complexes on the Nonradiative Recombination Processes in III-N Devices

Nicolas Grandjean, École Polytechnique Fédérale de Lausanne
Efficiency of Nitride LEDs—Impact of Point and Extended Defects

Zetian Mi, University of Michigan
Emerging Applications of III-Nitride Nanocrystals

Umesh Mishra, University of California, Santa Barbara
Conventional and N-Polar GaN HEMTs for High Frequency and High Power Applications

Shuji Nakamura, University of California, Santa Barbara
Developments of Nonpolar/Semipolar Edge Emitting Laser Diodes and VCSELs

Zlatko Sitar, North Carolina State University
How Do We Make AIGaN into a Versatile Semiconductors?

Martin Strassburg, OSRAM
Industrial LED Development—From UV to Red and from Efficient Components to Smart Devices

Jun Suda, Nagoya University
Development of Vertical GaN Power Devices

Invited Speakers

Martin Albrecht, Leibniz Institute for Crystal Growth
Challenges in Shifting the Emission of InGaN Quantum Wells towards the Red

Oliver Ambacher, Fraunhofer Institute
ScAlN-Based Ferroelectric and Piezoelectric Electro Acoustic Devices

Andrew Armstrong, Sandia National Laboratories
Visible and Solar-Blind Photodetectors using AlGaN High Electron Mobility Transistors with Nanodot-Based Floating Gate

Guillaume Cassabois, Université de Montpellier
Hexagonal Boron Nitride: Physics and Applications in the Deep Ultraviolet

Ana Cros, University of Valencia
Electrical Force Microscopies for the Study of Nitride Semiconductors—Results and Challenges

Rafael Dalmau, HexaTech, Inc.
AlN Single Crystal Substrate Growth for UV Applications

Russell Dupuis, Georgia Institute of Technology
Progress in Ultraviolet Vertical-Cavity Surface-Emitting Lasers

Sven Einfeld, Leibniz Ferdinand Braun Institute
GaN-Based Distributed Feedback and Distributed Bragg Reflection Laser Diodes with High-Order Surface Gratings

Hiroshi Fujioka, Tokyo University
Sputtering of III-Nitrides and Device Performance of Sputtered Material

Yasufumi Fujiwara, Osaka University
Development of Semiconductor Intra-Center Photonics

Noëlle Gogneau, University of Paris-Saclay
GaN Nanowires Based Piezoelectric Generators

Izabella Grzegory, Unipress
High Pressure in Physics and Technology of Bulk GaN Crystallization and Wafer Processing

Jung Han, Yale University
Semipolar GaN for Lighting and Display—Will This Ever Become Real?

Matthew Hardy, U.S. Naval Research Laboratory
Epitaxial Transition-Metal Nitrides—ScAlN, NbNx, and TaNx for Next-Generation Electronic Devices

Tamotsu Hashizume, Hokkaido University
Interface Control of Al2O3-Based MOS Structures for Advanced GaN Transistors

Johannes Herrnsdorf, University of Strathclyde
Gallium Nitride Micro-LED Drive Circuits for Visible Light Communications

Hideki Hirayama, RIKEN
LEE Enhancement in AlGaN UVC LED using Photonic Crystal Reflector

Robert Howell, Northrup Grumman Corporation
Next Generation RF Switches Using the Super Lattice Castellated Field Effect Transistor (SLCFET)

Debdeep Jena, Cornell University
The New Nitrides—Epitaxial Integration of 2D, Ferromagnetic and Superconducting Nitrides with GaN & AlN for Novel Device Applications

Yoshihiro Kangawa, Kyushu University
A New Theoretical Approach to Nitride Crystal Growth—Impurity Incorporation Mechanism

Jeehwan Kim, Massachusetts Institute of Technology
Opportunity and Challenges in 2D Material-Based Layer Transfer (2DLT) of III-N System

Katsumi Kishino, Sophia University
III-N Nanocolumn Visible LEDs

Hu Liang, imec
Enhancement-Mode p-GaN-HEMT Epitaxy Technology on 200 mm Si Substrates

Robert Martin, University of Strathclyde
Challenges in Accurate Assessment of Nanorod Structures

Farid Medjdoub, Institute of Electronics, Microelectronics and Nanotechnology
Towards Higher Voltage in III-Nitride Devices

Elke Meissner, Fraunhofer Institute
Identification of Key-Defects in GaN Epitaxial Layers Relevant for the Performance and Reliability of a GaN Based Device

Matteo Meneghini, Università degli Studi di Padova
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives

Yutaka Mikawa, Mitsubishi Chemicals Corporation
Acidic Ammonothermal Growth of Bulk GaN

Tomoyoshi Mishima, Hosei University
High Breakdown Voltage Vertical p-n Junctions GaN Diodes

Yusuke Mori, Osaka University
Recent Advances of GaN Growth by Na-Flux Method

Yusuke Nakayama, Sony Corporation
Watt-Class Operation of Green Laser Diodes on Semipolar {20-21} Gallium Nitride Substrates

Tetsuo Narita, Toyota
Growth of p-Type GaN Layers with Low Mg Concentrations by using MOVPE and the Application to Vertical Power Devices

Lorenzo Rigutti, University of Rouen
Quantitative Atom Probe Tomography of Ternary III-N Alloys—Accuracy Issues and Correlation with Optical Spectroscopy

Stefan Schulz, Tyndall National Institute
Nonlinear Piezoelectricity in III-N Heterostructures—The Role of the Growth Plane

Ulrich Schwarz, Chemnitz University of Technology
Group-III-Nitride Based Optoelectronics as Enabling Technology for Medical Implants

James Speck, University of California, Santa Barbara
Exploring the Fundamentals of Efficiency in III-N LEDs

Qian Sun, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO)
Heteroepitaxy of GaN-Based Materials and Devices on Si

Tetsuya Takeuchi, Meijo University
Epitaxy and Performance of VCSEL Structures

Yan Tang, HRL Laboratories
W Band and Beyond GaN Devices

Maria Tchernycheva, Université Paris-Sud
Nitride Nanowires for Mechanically Flexible Devices

Michael Uren, University of Bristol
Impact of Deep Levels on GaN HEMTs

Chris Van de Walle, University of California, Santa Barbara
Dopants and Defects in Ultrawide-Band-Gap Nitrides

Maria Vladimirova, CNRS-University of Montpellier
Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

Xinqiang Wang, Peking University
Growth of Ultrathin GaN Quantum Wells towards Deep Ultraviolet Light Sources

Tim Wernicke, Technischen Universität Berlin
Controlling defects in AlGaN and AlN for high efficiency deep UV LEDs

Euijoon Yoon, Seoul National University
Self-Passivated High-Efficiency c-Plane Micro-LED Array without Singulation Fabricated on Sapphire Nano-Membrane Structures




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