Keynote Speakers
Masataka Higashiwaki, National Institute of Information and Communications Technologies
Gallium Oxide Power Electronics
Akito Kuramata, Novel Crystal Technologies, Inc.
Bulk Growth and Wafer Production of Gallium Oxide
Grace Xing, Cornell University
Progress in Vertical Gallium Oxide Devices for Power Applications
Confirmed Invited Speakers
Oliver Bierwagen, Paul-Drude-Instit für Festkörperelektronik
Suboxide-mediated Reaction and Catalysis During the Molecular Bearm Epitaxy of Gallium Oxide,
Indium Oxide, and their Alloys
Shizuo Fujita, Kyoto University
Mist CVD Growth of Alpha Gallium Oxide and Heterostructures
Zbigniew Galazka, Leibniz Institute for Crystal Growth
Melt Growth and Doping of Bulk Beta Gallium Oxide and Zinc Gallate Single Crystals
Yoshinao Kumagai, Tokyo University
Growth of Gallium Oxide by HVPE
Yuichi Oshima, National Institute for Materials Science
Heteroepitaxial Growth of Alpha and Epsilon Gallium Oxide
Andrei Osinsky, Agnitron
MOCVD Growth of Gallium Oxide and Alloy Heterostructures
Stephen Pearton, University of Florida
Influence of Voltage, Temperature and Radiation Damage on Vertical Geometry Gallium Oxide Rectifiers
Andreas Popp, Leibniz Institute for Crystal Growth
MOVPE Growth of Gallium Oxide
Uttam Singisetti, University at Buffalo, The State University of New York
Ab-initio Electron Transport Calculations in Gallium Oxide
Chris Van de Walle, University of California, Santa Barbara
First Principals Studies of Gallium Oxide: Defects, Doping and Heterostructures
Virginia Wheeler, U.S. Naval Research Laboratory
Gallium Oxide Phase Control Using Atomic Layer Epitaxy