Schedule
12:00 pm–6:30 pm—Registration, 2nd Floor Foyer
PreSession Location: Grand Ballroom
1:00 pm–2:00 pm—Perspectives on Ga2O3 Application
Vivek Mehrotra, Teledyne
2:00 pm–5:00 pm—GOX Special Session
Kelson Chabak, Air Force Research Laboratory; Jim Speck, University of California, Santa Barbara; Mike Scarpulla, The University of Utah; Michael Thompson, Cornell University; Shin Mou, Air Force Research Laboratory
5:30 pm–6:30 pm—Welcome Reception, 2nd Floor Foyer
8:00 am – 5:00 pm—Registration, 2nd Floor Foyer
General Session Location: Grand Ballroom
8:30 am—Welcome
Keynote 1
8:40 am—KEY 1.1 (Keynote) Evolution of Ga2O3 Power Devices: Past, Present, and Future
Masataka Higashiwaki, National Institute of Information and Communications Technology
Epitaxial Growth 1
9:20 am—EPI 1.1 (Invited) Homoepitaxial β- Ga2O3 Thin Films Growth by MOCVD Using Various Oxygen Sources
Andrei Osinsky, Agnitron Technology
9:40 am—EPI 1.2 (Invited) Correlation Between Substrate Miscut Angle and Growth Rate for Homoepitaxial β- Ga2O3 Layers Grown by MOVPE
Andreas Popp, Leibniz-Institut für Kristallzüchtung
10:00 am—EPI 1.3 MOCVD Epitaxy of Si-Doped β- Ga2O3 Thin Films with Record High Electron Mobilities
Zixuan Feng, The Ohio State University
10:15 am—EPI1.4 MOVPE Growth of Homoepitaxial β- Ga2O3 Films Using Far Injection Showerhead
Praneeth Ranga, The University of Utah
10:30 am—Break, 2nd Floor Foyer
Epitaxial Growth 2
10:45 am—EPI 2.1 (Invited) Integration of Corundum-Structured Oxides for Device Tailoring
Shizuo Fujita, Kyoto University
11:05 am—EPI 2.3 Ternary Orthorhombic (InxGa1-x)2O3 and (AlxGa1-x)2O3 Thin Films: Growth and Material Properties
Anna Hassa, Universität Leipzig
11:20 am—EPI 2.2 Epitaxial Stabilization of κ-(InxGa1-x)2O3 and κ-(AlxGa1-x)2O3 Layers up to xIn ≤ 0.28 and xAl ≤ 0.68 by Tin-Assisted VCCS-PLD
Max Kneiß, Universität Leipzig
11:35 am—EPI 2.4 Epitaxial Growth of α-(InxAl1-x)2O3 Alloy Films by Mist Chemical Vapor Deposition
Daisuke Tahara, Kyoto Institute of Technology
11:50 am—EPI 2.5 (Invited) Ga2O3 Phase Control and Heterojunctions Using Plasma-Enhanced Atomic Layer Epitaxy
Virginia D. Wheeler, U.S. Naval Research Laboratory
12:10 pm – 1:40 pm—Lunch Break (Lunch is not provided)
Devices 1
1:40 pm—DEV 1.1 Demonstration of Over 10-A Ga2O3 Schottky Barrier Diodes Fabricated by Using High-Quality β- Ga2O33 Homoepitaxial Films
Kohei Sasaki, Novel Crystal Technology, Inc.
1:55 pm—DEV 1.2 Near Unity Ideality Factor for Sidewall Schottky Contacts Achieved Through Anisotropic Wet Etching of β- Ga2O3
Yuewei Zhang, University of California, Santa Barbara
2:10 pm—DEV 1.3 (Invited) Influence of Voltage, Temperature and Radiation Damage on Vertical Geometry Ga2O3 Rectifiers
Jiancheng Yang, University of Florida
2:30 pm—DEV 1.4 Investigation of Interfacial Evolution at Beta Phase Gallium Oxide Titanium/Gold Ohmic Junctions
Ming-Hsun Lee, University of Michigan
2:45 pm—DEV 1.5 MOCVD Growth of β-(AlxGa1−x)2O3 Thin Films on Ga2O3 Substrates
Anhar Bhuiyan, The Ohio State University
3:00 pm—DEV 1.6 High Temperature (> 350 °C) Schottky Contacts on β- Ga2O3
Martin Allen, University of Canterbury
3:15 pm—DEV 1.7 Dual-Modality Solar-Blind Ultraviolet Light Sensing by β-Ga2O3 Nanoelectromechanical Transducer
Xu-Qian Zheng, Case Western Reserve University
3:30 pm—Break, 2nd Floor Foyer
Devices 2
3:45 pm—DEV 2.1 β- Ga2O3 Delta-Doped Field Effect Transistors with Cutoff Frequency of 27GHz
Zhanbo Xia, The Ohio State University
4:00 pm—DEV 2.2 Ga2O3 MOSFETs with (AlGa)2O3 Back Barrier
Takafumi Kamimura, National Institute of Information and Communications Technology
4:15 pm—DEV 2.3 Self-Aligned Gate Thin-Channel β-Ga2O3 MOSFETs
Kyle J Liddy, KBRwyle
4:30 pm—DEV 2.4 Nearly-Ideal Characteristics of SiO2/β- Ga2O3 MOS Capacitors Fabricated with High-Temperature O2-Annealing
Koji Kita, The University of Tokyo
4:45 pm—DEV 2.5 Development of Si:α-(AlxGa1-x)2O3/α-(CryGa1-y)2O3 High Electron Mobility Transistors
Giang T. Dang, Kochi University of Technology
5:00 pm – 6:00 pm—Poster Session I and Reception, Patio and 2nd Floor Foyer
7:00 pm – 9:00 pm—Rump Session: Is Ga2O3 Too Hot to Handle?, Pfahl 140
Wednesday, August 14, 2019
8:00 am – 5:00 pm—Registration, 2nd Floor Foyer
General Session Location: Grand Ballroom
8:30 am—Welcome Back
Keynote 2
8:40 am—KEY 2.2 (Keynote) Ga2O3 Power Schottky Barrier Diodes and Transistors: Design Principles and Experimental Validation
Grace H. Xing, Cornell University
Epitaxial Growth 3
9:20 am—EPI 3.1 (Invited) Growth of Gallium Oxide by HVPE
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
9:40 am—EPI 3.2 (Invited) Halide Vapor Phase Epitaxy of Meta-Stable Ga2O3
Yuichi Oshima, National Institute for Materials Science
10:00 am—EPI 3.3 Influence of Growth Temperature and Input VI/III Ratio on Crystallinity in Homoepitaxy of β-Ga2O3 by Halide Vapor Phase Epitaxy
Ken Goto, Tokyo University of Agriculture and Technology
10:15 am—EPI 3.4 Single-Phase α-(AlxGa1-x)2O3 Films Grown on m-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy
Riena Jinno, Cornell University
10:30 am—Break, 2nd Floor Foyer
Epitaxial Growth 4
10:45 am—EPI 4.1 (Invited) Thermodynamics and Suboxide-Related Kinetics during Molecular Beam Epitaxy of Ga2O3: Catalysis, Faceting, and Phase Formation
Oliver Bierwagen, Paul-Drude-Institut für Festkörperelektronik
11:05 am—EPI 4.2 High Electron Density β-(Al0.18Ga0.82)2O3/Ga2O3 Modulation Doping with Ultrathin (1 nm) Spacer Layer
Nidhin Kurian Kalarickal, The Ohio State University
11:20 am—EPI 4.3 Acceptors in (010) β-Ga2O3 Grown by Plasma-Assisted Molecular Beam Epitaxy
Akhil Mauze, University of California, Santa Barbara
11:35 am—EPI 4.4 Efficient Suboxide Sources for Oxide MBE Using the Sublimation of SnO2+Sn and Ga2O3+Ga Mixtures
Georg Hoffmann, Paul-Drude-Institut für Festkörperelektronik
11:50 am—EPI 4.5 Substrate-Orientation Dependence of In-Mediated Metal-Exchange Catalysis During β- Ga2O3 Homoepitaxy by MBE
Piero Mazzolini, Paul-Drude-Institut für Festkörperelektronik
12:10 pm – 1:35 pm—Lunch Break (Lunch is not provided)
Modeling
1:35 pm—MOD 1.1 (Invited) First-Principles Studies of Ga2O3: Defects, Doping, and Heterostructures
Chris G. Van de Walle, University of California, Santa Barbara
1:55 pm—MOD 1.2 Ab-initio Study of the Effects of Stress on the Low Field Electron Mobility in β-Ga2O3
Ankit Sharma, University at Buffalo
2:10 pm—MOD 1.3 Calculated Electron Paramagnetic Resonance Parameters for Defects in β-Ga2O3 and Related Materials
Walter Lambrecht, Case Western Reserve University
2:25 pm—MOD 1.4 Theoretical Investigation of Infrared Photodetection in Gallium Oxide/Aluminum Gallium Oxide Quantum Well Structures
Joseph E Lyman, The University of Utah
2:40 pm—MOD 1.5 (Invited) Ab Initio Electron Transport in Monoclinic β-Ga2O3
Uttam Singisetti, University at Buffalo
3:00 pm—Break, 2nd Floor Foyer
Devices 3
3:15 pm—DEV 3.1 Orientation Dependence in Ga2O3 Vertical Fin-Channel Power Devices
Wenshen Li, Cornell University
3:30 pm—DEV 3.2 Etch Damage Control in Deep-Recessed β-Ga2O3 Field Effect Transistors
Chandan Joishi, The Ohio State University; Indian Institute of Technology Bombay
3:45 pm—DEV 3.3 Lateral 750 V Ga2O3 MISFET with 100 MW/cm² Power Figure-of-Merit
Kornelius Tetzner, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
4:00 pm—DEV 3.4 Ga2O3 Field Plated MOSFETs with Ohmic Cap Layer
Ke Zeng, University at Buffalo
4:15 pm—DEV 3.5 Comparison Between Lateral and Vertical Ga2O3 Isolation Structures
Carlo De Santi, University of Padova
4:30 pm—DEV 3.6 Metal/BaTiO3/β-Ga2O3 Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown
Zhanbo Xia, The Ohio State University
4:45 pm—DEV 3.7 Hydrogen Environment Anisotropic Thermal Etching Characteristics of (010) β-Ga2O3 and Fabrication of High Aspect Nanowall Structure
Yuki Ooe, Sophia University
5:00 pm – 6:00 pm—Poster Session II and Reception, Patio and 2nd Floor Foyer
6:45 pm – 8:45 pm—Dinner Reception at The Ohio State Faculty Club
Thursday, August 15, 2019
8:00 am – 2:00 pm—Registration, 2nd Floor Foyer
General Session Location: Grand Ballroom
8:30 am—Welcome–Last Day
Keynote 3
8:40 am—KEY 3.3 (Keynote) Recent Progress in Edge-Defined Film-Fed Growth and Halide Vapor Phase Epitaxy of β- Ga2O3 for Power Device Applications
Akito Kuramata, Novel Crystal Technology, Inc.
Bulk Growth
9:20 am—BULK 1.1 (Invited) Czochralski-Grown Bulk β-Ga2O3 Single Crystals Doped with Mono-, Di-, Tri-, and Tetravalent Ions, and VGF-Grown Bulk ZnGa2O4 Single Crystals
Zbigniew Galazka, Leibniz-Institut für Kristallzüchtung
9:40 am—BULK 1.2 Phonon Order and Longitudinal-Optical Phonon Plasmon Coupling in β-Ga2O3
Mathias M. Schubert, University of Nebraska-Lincoln
9:55 am—BULK 1.4 Bulk β-Ga2O3 Single Crystal Growth Interface Control and In-Plane Polarization
Wenxiang Mu, Shandong University
10:10 am—Break, 2nd Floor Foyer
Thermal and Devices
10:25 am—TRN 1.1 Thermal Characterization of Delta-Doped β-Ga2O3MESFET
Nitish Kumar, Georgia Institute of Technology
10:40 am—TRN 1.2 Thermal Boundary Conductance Across Heterogeneous Ga2O3-Diamond Interfaces
Zhe Cheng, Georgia Institute of Technology
10:55 am—TRN 1.3 Integration of Thinned Ga2O3 with Single Crystal 4H-SiC for Thermal Management of Ga2O3 Power Devices
Jacob H. Leach, Kyma Technologies
11:10 am—TRN 1.4 Characterization of Annealing-Induced Conductivity Changes in (-201) β-Ga2O3
Marko J. Tadjer, U.S. Naval Research Laboratory
11:25 am—TRN 1.5 Orientation-Dependent Electrical Performance of β-Ga2O3 MOSFETs
Taylor Moule, University of Bristol
11:40 am—TRN 1.6 Investigation of Hydrogen in MOCVD β-Ga2O3
Adam Neal, Air Force Research Laboratory
11:55 am – 1:25 pm—Lunch Break (Lunch is not provided)
Characterization 1
1:25 pm—CHA 1.1 Full-Bandgap Investigation of Electronic Defect States in High-Mobility MOCVD-Grown (010) β-Ga2O3
Hemant Jagannath Ghadi, The Ohio State University
1:40 pm—CHA 1.3 Comparison of the Electrical Properties of β-Ga2O3 Layers Homoepitaxially Grown by MOVPE and HVPE
Andreas Fiedler, Leibniz-Institut für Kristallzüchtung
1:55 pm—CHA 1.4 Characteristics of Terahertz Emissions from (010) and (-201) Surfaces of β-Ga2O3 Excited by Femtosecond Laser Pulses
Kawayama Iwao, Osaka University
2:10 pm—CHA 1.5 Electron Paramagnetic Resonance and Charge State Transition Levels of Cobalt in β-Ga2O3
Klaus Irmscher, Leibniz-Institut für Kristallzüchtung
2:25 pm—CHA 1.6 Examination of Dielectric Function Tensor (1.5 eV to 9.0 eV), Anisotropy, and Band-to-Band Transitions for Monoclinic β-(AlxGa1-x)2O3 (x ≤ 0.21) Films Using Generalized Spectroscopic Ellipsometry
Matthew Hilfiker, University of Nebraska-Lincoln
2:40 pm—Break, 2nd Floor Foyer
Characterization 2
2:55 pm—CHA 2.1 Direct Determination of Point Defects and Complexes in β-Ga2O3 Using Scanning Transmission Electron Microscopy
Jinwoo Hwang, The Ohio State University
3:10 pm—CHA 2.2 Direct Imaging of Surface Segregation of Tin Dopants and Preferential Dopant Sites in β- (Al0.15Ga0.85)2O3 Films
Celesta S. Chang, Cornell University
3:25 pm—CHA 2.3 Atomic Scale Investigation of Substitutional Alloying in β-(InxGa1-x)2O3 and β-(AlxGa1-x)2O3
Jared Johnson, The Ohio State University
3:40 pm—CHA 2.4 Leveraging Three Dimensional Chemical Imaging to Investigate Structure and Chemistry of β-(AlxGa1-x)2O3; Towards an Ultra-High Band Gap Material
Jith Sarker, University at Buffalo, The State University of New York
3:55 pm—CHA 2.5 Optical Transitions in β-Ga2O3 Single Crystal Studied by Electroreflectance Measurements
Takeyoshi Onuma, Kogakuin University
4:10 pm—CHA 2.6 IR-VUV Dielectric Function of Kappa-(In,Al,Ga)2O3 Thin Films
Chris Sturm, Universität Leipzig
4:25 pm–4:55 pm—Closing
GOX Special Session
The purpose of this workshop is to provide a platform for discussion for recent advances in the Gallium Oxide semiconductor system and identify scientific gaps for which the community should focus. The intent is to create actionable coordination across the government, industry and academia. A program will be released shortly. GOX2019 will be a special session at IWGO2019. Attendees should select the GOX session when registering for IWGO2019. If you will only be attending this session and not staying for IWGO2019, please contact us.
Invited Speakers
- Kelson Chabak, Air Force Research Laboratory
- Jim Speck, University of California, Santa Barbara
- Mike Scarpulla, The University of Utah
- Michael Thompson, Cornell University
- Shin Mou, Air Force Research Laboratory
Poster Session I
Tuesday, 5:00–6:00 pm
P1.1—Intentional Iron Diffusion in β-Ga2O3 (Bray)
P1.2—Demonstration of CuI as a P-N Heterojunction to β-Ga2O3 (Gallagher)
P1.3—Synchrotron X-Ray Topography Observation of Defects in Vertical-Bridgman-Grown β-Ga2O3 Single Crystal (Kasu)
P1.4—High-Performance Si/ β-Ga2O3 pn Heterojunction Diodes (Kim)
P1.5—Demonstration of (AlGa)2O3-channel MOSFETs (Okumura)
P1.6—WITHDRAWN—High-Performance Solar-Blind Lateral Schottky Photodiode Based on Heteroepitaxial ε-Ga2O3 Thin Film (Qin)
P1.7—Ga2O3 Field Effect Transistors on Grown on Sapphire by MOCVD (Razeghi)
P1.8—Enhanced III-Nitride Quantum Wells Grown on Conductive, Transparent (-201)- β-Ga2O3, for High Efficiency Vertical Visible and UV Light-Emitting Devices (Roqan)
P1.9—Highly Rectifying Contacts on (In,Ga)2O3 Thin Films Grown by PLD (Splith)
P1.10—Metal/BaTiO3/ β-Ga2O3 Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field (Xia)
P1.11—High-Performances Self-Powered Deep Ultraviolet Photodetector Based on β-Ga2O3/4H-SiC Heterojunction (Yu)
P1.12—Impact of Flat-Band Shift in the HfAlO/Ga2O3 MOSCAPs with Different Gate Metal (Zhang)
P1.13—Electrical Property of α-Ga2O3 Films on m-Plane Sapphire Substrates (Akaiwa)
P1.14—MOCVD Growth of β-(AlxGa1−x)2O3 Thin Films on Ga2O3 Substrates (Bhuiyan)
P1.15—Effects of Nano Epitaxial Lateral Overgrowth on Growth of α-Ga2O3 by Halide Vapor Phase Epitaxy (Cha)
P1.16—MOCVD Growth of ε- Ga2O3 Thin Films on Si(111) Substrate with AlN Buffer (Chen)
P1.17—Growth of High-Crystalline-Quality α- Ga2O3 Epilayer Grown by Halide Vapor-Phase Epitaxy Using Pulse Oxygen Flow Mode (Jeon)
P1.18—Ga-Etching of Different β- Ga2O3 Surface (Mazzolini)
P1.19—Excitonic Emission Observed in Mist CVD Grown α- Ga2O3 (Muazzam)
P1.20—Ga2O3 on Si(100) Based Vertical Schottky UV-C Photodetectors by Molecular Beam Epitaxy (Mukhopadhyay)
P1.21—MBE Growth and Characterization of β-Ga2O3/NbNx Heterostructures on SiC (Nepal)
P1.22—Biaxial-Textured Epitaxial Gallium Oxide Thin Films on Low Cost, Flexible Metal Substrates (Sun)
P1.23—Growth of High Quality α-Ga2O3 on Sapphire Substrate by Mist-CVD (Yang)
P1.24—Mobility Calculation of the Gallium Oxide Double-Gate Metal-Insulator-Semiconductor Structure (Cha)
P1.25—A Computational Survey of Wide Band Gap Materials for Next-Generation Power Electronic Devices Beyond Ga2O3 (Gorai)
P1.26—Thermodynamic Study on Halide Vapor Phase Epitaxy of Ga2O3 Using GaCl or GaCl3 as a Group-III Precursor (Kamo)
P1.27—Stress/Strain Behavior of Infrared-Active Phonons and Phonon Deformation Potentials in β-Ga2O3 (Korlacki)
P1.28—Epsilon-Gallium Oxide-Based Ferroelectric Semiconductors (Mishra)
P1.29—Temperature-Dependent Thermal and Thermoelectric Properties of β-Ga2O3 Thin Films and Bulk Substrates (Handwerg)
P1.30—Electron Diffraction and Cathodoluminescence Imaging of β-Ga2O3 Using a Scanning Electron Microscope (Gunasekar)
P1.31—Atomic Scale Investigation of Substitutional Alloying in β-(InxGa1-x)2O3 and β-(AlxGa1-x)2O3 (Johnson)
P1.32—Study of Defects in β-Ga2O3 by Steady-State Capacitance Spectroscopy (Li)
P1.33—Properties of Epitaxial β-Ga2O3 films Determined by Long-Wavelength Spectroscopic Ellipsometry and Their Relation to Strain (Mock)
P1.34—Diffusion of Hydrogen in β-Ga2O3 and Interplay with Gallium Vacancies (Reinertsen)
P1.35—Multi-Photon Photoluminescence Behaviors of β-Ga2O3 as Probed by Wavelength-Dependent Nonlinear Optical Spectroscopy (Song)
P1.36—Utilizing Steady-State Photocapacitance Measurements to Study Migration/Passivation of Defects in β-Ga2O3 (Zimmermann)
P1.37—Deep Traps in N-Type α-Ga2O3:Sn Films Grown by HVPE on (0001) Sapphire (Vladimir I. Nikolaev, Ioffe Institute & Perfect Crystals LLC)
Poster Session II
Wednesday, 5:00–6:00 pm
P2.1—Crucible Material Alloys Based on Platinum for VB β-Ga2O3 Crystal Growth in Ambient Air (Hoshikawa)
P2.2—Relation Between Emission Spots and Reverse Leakage Current in HVPE (001) β-Ga2O3 Schottky Barrier Diodes (Kasu)
P2.3—Developments in Bulk Growth Of β-Ga2O3 via the Czochralski Method and Fabrication of (010) Epi-Ready Substrates (Lindsey)
P2.4—Switching Characteristics of PFC Circuit Using β-Ga2O3 Schottky Barrier Diodes (Arima)
P2.5—Schottky Barrier Height Engineering in β-Ga2O3 Using a Dielectric Interlayer (Bhattacharyya)
P2.6—Large Area Nanometer-Thin Ga2O3 Films from Gallium-Melt Exfoliation (Cooke)
P2.7—Role of Oxygen Vacancies and Interface States in High Quality Schottky Contacts to β-Ga2O3 (Allen)
P2.8—Electrical Behavior of (100) β-Ga2O3 Schottky Diodes with Different Schottky Metals (Jiang)
P2.9—Ultraviolet-C p-NiO/n-Ga2O3 Photodetectors Grown on c-Plane Sapphire by Pulsed Laser Deposition (Li)
P2.10—Band Gap Tunable β-(AlxGa1-x)2O3 Thin Film Achieved by Ultra-High Temperature Annealing (Liao)
P2.11—Impact of Electron-Beam Irradiation on the Performance of β-Ga2O3 Schottky Barrier Diodes (Lin)
P2.12—p-NiO/n-Ga2O3 Heterojunction for Power Electronics (Lu)
P2.13—High Responsivity Tin Alloyed Ga2O3 Solar Blind Photodetectors on β-Ga2O3 Substrates by Molecular Beam Epitaxy (Mukhopadhyay)
P2.14—WITHDRAWN—Optical Float-Zone Grown Bulk β-Ga2O3-Based Linear MSM Array of UV-C Photodetectors (Pratiyush)
P2.15—WITHDRAWN—LPCVD-Grown β-Ga2O3-Based UV-C Photodetectors: Effect of Oxygen Flow (Pratiyush)
P2.16—β-Ga2O3 Solar-Blind Photodetector on Thermal Pretreated c-Plane and r-Plane Sapphire Substrates by Pulsed Laser Deposition (Shalabi)
P2.17—Large Area (7mm×7mm) Schottky Solar-Blind Photodiode with a Benchmark Response Speed (Yang)
P2.18—Effect of Inlet Position and Flow Velocity in Hot-Wall Mist Chemical Vapor Deposition During Ga2O3 Thin Film Growth (Bae)
P2.19—Carrier Compensation and Scattering Mechanism in Laser-MBE Grown Degenerate Si-Doped Ga2O3 (-201) Homoepilayers (Chen)
P2.20—Heteroepitaxy of ε- Ga2O3 Thin Films by Metal Organic Chemical Vapor Deposition (Chen)
P2.21—Effect of Plasma Treatment of GaN Templates on ε-Ga2O3 Epitaxial Growth by Mist Chemical Vapor Deposition (Ito)
P2.22—Comparison of Ga2O3 Thin Films on c-Plane and m-Plane Sapphire Substrates Grown by Mist CVD (Kim)
P2.23—Gallium Oxide Deposition by Atomic Layer Deposition and Improved Electrical Properties by Annealing (Kroencke)
P2.24—Growth of β-Ga2O3 Layer on β-Ga2O3(-201) and c-Plane Sapphire Substrate by HVPE (Lee)
P2.25—Morphology Effect of Different Unintentional Substrate Offcuts on (010) β-Ga2O3 Films Homoepitaxially Grown by MBE (Mazzolini)
P2.26—Investigation of Thermal and Chemical Stabilities of (001), (010), and (-2 01) β-Ga2O3 Substrates in a Flow of Either N2 or H2 (Togashi)
P2.27—High Temperature LPCVD Growth of β-Ga2O3 Films (Zhang)
P2.28—Technoeconomic Analysis of Gallium Oxide Wafer Cost (Reese)
P2.29—Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors (Choi)
P2.30—Evolution and Recovery of Ion Implantation-Induced Damage Zone in β-Ga2O3 (Anber)
P2.31—Optical Absorption of Impurities in Doped Ga2O3 (Bhandari)
P2.32—Insights on Oxygen Vacancies in G2O3 Epitaxial Films (Freitas)
P2.33—Nanoscale Studies of Schottky Barrier Contacts on (-201) β-Ga2O3 Using Ballistic Electron Emission Microscopy (BEEM) (Galiano)
P2.34—Neutron Irradiation and Thermal Anneal Impact on Ga2O3 Deep Level Defects (Gao)
P2.35—Thermal Conductivity of β-Ga2O3 Thin Films Grown by Molecular Beam Epitaxy (Vaca)
P2.36—Deep Level Traps in β-Ga2O3 Studied by Thermally Stimulated Current (TSC) Spectroscopy (Wang)