Electrical Characterization of the Alleged Bio-Memristor Physarum Polycephalum

Quantum circuits can be simulated using classical computers and various physical systems, including memristors. Reports in the literature suggest that the slime mold <i>Physarum polycephalum</i> exhibits memristive properties. In this study, we aimed to simulate a quantum CNOT gate using memristors based on <i>P. polycephalum</i>.<br/>We cultivated 25 slime molds in a setup comprising two chambers connected by electrically conductive rings and a transparent tube. After the slime molds traversed the tube, we conducted 187 electrical measurements using the conductive rings. Surprisingly, the resulting I-V curves provided minimal evidence of memristive behavior in the slime molds.<br/>We developed equivalent circuit models and determined that most slime molds could be approximated primarily by resistors and capacitors. A more detailed equivalent circuit must account for the slight resistance (impedance) changes induced by internal plasma flow at a frequency of approximately 1/60 to 1/120 Hz and a voltage source of about 20-40 mV. Although our findings do not support the initial objective of simulating a quantum CNOT gate with slime molds, we will discuss the potential for organisms like <i>P. polycephalum</i> to serve as components in bioelectronic circuits (e.g. biosensors, microbial fuel cells).