Meetings & Events

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2007 MRS Fall Meeting & Exhibit

November 26 - 30, 2007  | Boston
Meeting Chairs:
 Duane Dimos, Mary Galvin, David Mooney, Konrad Samwer

Symposium M : Materials and Hyperintegration Challenges in Next-Generation Interconnect Technology

2007-11-27   Show All Abstracts

Symposium Organizers

Robert Geer State University of New York-Albany
James D. Meindl Georgia Institute of Technology
Rajashree (Raji) Baskaran Intel Corporation
Pulickel M. Ajayan Rice University
Ehrenfried Zschech AMD Saxony LLC & Co. KG

Symposium Support

Intel Corp.
M1: Broad Interconnect Issues
Session Chairs
Pulickel M. Ajayan
Tuesday PM, November 27, 2007
Hampton (Sheraton)

2:30 PM - **M1.1
Nanoscale Electronic Interconnects and Devices: Challenges and Opportunities.

Alain Kaloyeros 1
1 College of Nanoscale Science and Engineering, SUNY at Albany, Albany, New York, United States

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3:00 PM - **M1.2
High Speed Chip-to-Chip Signal Links on Organic Substrates.

Paul Kohl 1 , Todd Spencer 1
1 Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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3:30 PM - **M1.3
I-PVD and PE-ALD Technologies and Integration Challenges for 32 and 22 nm Node Metallization.

Stephen Rossnagel 1
1 T.J. Watson Res, Ctr., IBM Research, Yorktown Heights, New York, United States

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4:00 PM - M1
BREAK

4:30 PM - **M1.4
Bonded Cu Interconnects for Tree-Dimensional Integrated Circuits.

Carl Thompson 1 , Rajappa Tadepalli 1 , Kevin Turner 2 , Chee Lip Gan 3
1 , M.I.T., Cambridge, Massachusetts, United States, 2 , University of Wisconsin-Madison, Madison, Wisconsin, United States, 3 , Nanyang Technical University, Singapore Singapore

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5:00 PM - **M1.5
How to Achieve High Strength and High Conductivity Simultaneously in Copper?

Ke Lu 1
1 , Chinese Academy of Sciences, Shenyang China

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5:30 PM - **M1.6
Systems-Driven View of Interconnect Material and Process Challenges.

Seshadri Subbanna 1 , Robert Wisnieff 2
1 Strategic Alliances and Office of CTO, IBM Systems & Technology Group, Yorktown Heights, New York, United States, 2 Research Division,, IBM Corp.,, Yorktown Heights, New York, United States

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2007-11-28   Show All Abstracts

Symposium Organizers

Robert Geer State University of New York-Albany
James D. Meindl Georgia Institute of Technology
Rajashree (Raji) Baskaran Intel Corporation
Pulickel M. Ajayan Rice University
Ehrenfried Zschech AMD Saxony LLC & Co. KG
M2: Optical Interconnect Systems and Advanced Interconnects
Session Chairs
Robert Geer
Wednesday AM, November 28, 2007
Hampton (Sheraton)

9:30 AM - **M2.1
Germanium on Silicon Modulators and Nanometallic-Enhanced Detectors for Optical Interconnects.

David Miller 1
1 Electrical Engineering, Stanford University, Stanford, California, United States

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10:00 AM - **M2.2
Novel Concepts of Fast Optical Sources for off-Chip Interconnect Applications.

Serge Oktyabrsky 1 , Vadim Tokranov 1 , Jobert van Eisden 1 , Michael Yakimov 1 , Manasa Varanasi 1 , Rama Kambhampati 1
1 CNSE, University at Albany, Albany, New York, United States

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10:30 AM - **M2.3
Plasmonics - The Next Wave of Chipscale Technologies!

Mark Brongersma 1
1 , Geballe Laboratory for Advanced Materials, Stanford, California, United States

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11:00 AM - M2
BREAK

11:30 AM - **M2.4
Cellular Automata-based Electronic Architecture: An Alternative Approach to Meet the Materials and Processing Challenges for the Next Generation Interconnect Technology.

Shashi Karna 1 , James Lyke 2
1 Weapons & Materials Research Directorate, US Army Research Laboratory, Aberdeen Proving Ground, Maryland, United States, 2 Space Vehicles Directorate, AFRL/VSSE, US Air Force Research Laboratory, Kirtland Air Force Base, New Mexico, United States

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12:00 PM - M2.5
Effects of Nanometer-Scale Surface Roughness and Applied Load on the Contact Resistance of Cu-Cu Bonded 3D ICs.

Hoi Liong Leong 2 1 , Chee Lip Gan 1 2 , Carl Thompson 5 2 , Kin Leong Pey 3 2 , Hongyu Li 4
2 Advanced Materials for Micro- and Nano-Systems, Singapore-MIT Alliance, Singapore Singapore, 1 School of Materials Science and Engineering, Nanyang Technological University, Singapore Singapore, 5 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States, 3 School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore Singapore, 4 , Institute of Microelectronics, Singapore Singapore

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12:15 PM - M2.6
Low Temperature, Metal(Ni)-induced Lateral Crystallization(MILC) of amorphous(α)-Germanium(Ge) for 3-Dimensional Integrated Circuits(3D ICs).

Jin-Hong Park 1 , Pawan Kapur 1 , Hailin Peng 2 , Krishna Saraswat 1 2
1 Electrical Engineering, Stanford University, Stanford, California, United States, 2 Material&Science Engineering, Stanford University, Stanford, California, United States

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12:30 PM - M2.7
Performance of Random-metal Dielectric Film for Signal Transmission.

Mitsuo Fukuda 1 , Atsushi Utsumi 1 , Yusuke Yamasaki 1 , Hiroya Funato 1 , Naohiro Takemoto 1 , Norihiro Oota 1
1 Electrical & Electronics Engineering Department, Toyohashi University of Technology, Toyohashi, Aichi, Japan

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12:45 PM - M2.8
All Copper Chip-to-Substrate Interconnects.

Paul Kohl 1 , Tyler Osborn 1
1 Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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M3: Growth and Characterization of Interconnect Materials
Session Chairs
Kevin O'Brien
Wednesday PM, November 28, 2007
Hampton (Sheraton)

2:30 PM - M3.1
Low Temperature Silicon Nitride Films Deposited on 3D Topography by Hot Wire Chemical Vapor Deposition (HWCVD).

Stephan Warnat 1 , Markus Hoefer 2 , Lothar Schaefer 2 , Helmut Foll 3 , Peter Lange 1
1 , Fraunhofer Institute for Silicon Technology, Itzehoe Germany, 2 , Fraunhofer Institute for Surface Engineering and Thin Films, Braunschweig Germany, 3 Technical Faculty, University of Kiel, Kiel Germany

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2:45 PM - M3.2
Dielectric Constant Measurement of Pure-Silica-Zeolite Low-k Powder Materials by Time Domain Reflectometry (TDR).

Minwei Sun 1 , Wolfgang Maichen 2 , Ramdas Pophale 3 , Christopher Lew 1 , Yan Liu 1 , Heather Hunter 4 , Michael Deem 3 , Mark Davis 4 , Yushan Yan 1
1 CEE, University of California, Riverside, Riverside, California, United States, 2 , Teradyne Inc., Agoura Hills, California, United States, 3 Department of Bioengineering, Physics and Astronomy, Rice University, Houston, Texas, United States, 4 Chemical Engineering, California Institute of Technology, Pasadena, California, United States

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3:00 PM - M3.3
Plasma Enhanced Atomic Layer Chemical Vapor Deposition of TaNX Diffusion Barrier on Plasma-modified Ultralow-k Mesoporous Silica Dielectric Thin Films.

Chih-Chieh Chang 1 , Fu-Ming Pan 1 , Ching-Wen Chen 1
1 Materials Science and Engineering, National Chiao-Tung University, Hsinchu Taiwan

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3:15 PM - M3.4
Diffusion Barrier Property of Mo/Ti Bi-layer Films for Cu-metallization.

Prodyut Majumder 1 , Christos Takoudis 2
1 Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois, United States, 2 Departments Chemical Engineering and Bioengineering, University of Illinois at Chicago, Chicago, Illinois, United States

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3:30 PM - M3.5
Influence of Trench Width on the Microstructural Evolution of Copper Electroplated in Narrow Features.

Ruud van den Boom 1 , Eric Lifshin 1 , Kathleen Dunn 1
1 College of Nanoscale Science & Engineering, University at Albany - SUNY, Albany, New York, United States

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3:45 PM - M3.6
Microstructure Optimization and Texture Manipulation of Al and Cu Films via SLS.

Min Hwan Choi 1 , Jae Beom Choi 2 , Ui-Jin Chung 1 , Paul Van Der Wilt 1 , Alexander Limanov 1 , James Im 1
1 Applied Physics and Applied Mathematics, Columbia University, New York, New York, United States, 2 , Samsung Electronics Co., Ltd., Yongin Korea (the Republic of)

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4:00 PM - M3
BREAK

4:30 PM - M3.7
A Specimen Preparation Technique for 3D Characterization of Nano Materials at Specific-site using FIB-STEM/TEM System.

Toshie Yaguchi 1 , Mitsuru Konno 1 , Takeo Kamino 1 , Kuniyasu Nakamura 1 , Junzo Azuma 1 , Takashi Kita 2 , Tomoya Inoue 2
1 , Hitahi High-Technologies Corporation, Hitachinaka-shi Japan, 2 , Kobe University, Kobe Japan

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4:45 PM - M3.8
Dielectrophoretic Aligned Ni Silicide Nanowire Connections and Electrical Properties.

Joondong Kim 1 , Yun Chang Park 2 , Dong Hun Shin 1 , Eung-Sug Lee 1 , Chang-Soo Han 1
1 Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials, Daejeon Korea (the Republic of), 2 Measurement and Analysis Division, National Nanofab Center, Daejeon Korea (the Republic of)

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5:00 PM - M3.9
Carbon Nanotube Growth on Conductive Substrates for Interconnect Applications.

Gilbert Nessim 1 , Donatello Acquaviva 2 , Harvey Tang 1 , Matteo Seita 1 , Nicola Abate 1 , Carl Thompson 1
1 Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts, United States, 2 Laboratory of Micro and Nanoelectronics Devices (LEG2), Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne Switzerland

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5:15 PM - M3.10
Strained Zigzag Single Walled Carbon Nanotubes (SWNTs) for Interconnects.

Subbulakshmi Sreekala 1 2 , Xi-Hong Penx 1 , Ajayan Pulickel 2 , Saroj Nayak 1
1 Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Department of Materials Science and Enggineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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5:30 PM - M3.11
Very High Density Three Dimensional Single-Walled Carbon Nanotube Based Interconnects.

Mehmet Dokmeci 1 , Chia-Ling Chen 1 , Selvapraba Selvarasah 1 , Shih-Hsien Chao 1 , Prashanth Makaram 2 , Ahmed Busnaina 2
1 Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts, United States, 2 Department of Mechanical and Industrial Engineering, Northeastern University, Boston, Massachusetts, United States

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M4: Poster Session
Session Chairs
Pulickel M. Ajayan
Raji Baskaran
Thursday AM, November 29, 2007
Exhibition Hall D (Hynes)

9:00 PM - M4.1
Photonic Crystal Light Emitting Devices on Silicon on Insulator.

Nicolas Pauc 1 2 , Vincent Aimez 2 , Emmanuel Hadji 1 , Dominique Drouin 2
1 DRFMC/SP2M, CEA Grenoble, Grenoble France, 2 CRN2, Universite de Sherbrooke, Sherbrooke, Quebec, Canada

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9:00 PM - M4.10
Evaluation of the Kinetics of Sn Nucleation in Near Eutectic SnAgCu and Examination of Corresponding Solder Joint Microstructures.

Babak Arfaei 1 , Eric Cotts 1
1 Physics and Materials Science, Binghamton University, Binghamton, New York, United States

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9:00 PM - M4.11
Mesoporous Silica Films with Enhanced Stability by Passivation with Multifunctional Organosilanes.

Binay Singh 1 , Darshan Gandhi 1 , Amit Singh 1 , G. Ramanath 1
1 , Rensselaer Polytechnic Institute, Troy, New York, United States

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9:00 PM - M4.12
Influence of Plating Parameters on the Voiding Propensity at Electroplated Copper-Solder Interface.

Y. Liu 1 , J. Wang 1 , L. Yin 4 , P. Kondos 4 , P. Borgesen 4 , D. Henderson 5 , C. Parks 5 , N. Dimitrov 1 3 , E. Cotts 1 2
1 Material Science and Engineering program, Binghamton University, Binghamton, New York, United States, 4 Area Array Consortium , Unovis Solutions, Binghamton, New York, United States, 5 , IBM, Endicott, New York, United States, 3 Department of Chemistry, Binghamton University, Binghamton, New York, United States, 2 Department of Physics, Binghamton University, Binghamton, New York, United States

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9:00 PM - M4.13
Energy Gaps in Zero-dimensional Graphene Nanoribbons.

Philip Shemella 1 , Yiming Zhang 1 , Li Chen 1 , Mitch Mailman 1 , Pulickel Ajayan 2 , Saroj Nayak 1
1 Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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9:00 PM - M4.14
Thermal Diffusivity Measurement of Thin Films on Silicon Substrate by Telecom Wavelength Picosecond Laser Thermoreflectance.

Shakhawat Firoz 1 , Takashi Yagi 1 , Naoyuki Taketoshi 1 , Tetsuya Baba 1
1 Material Properties and Metrological Statistics Division, National Metrology Institute of Japan, AIST, Tsukuba, Ibaraki, Japan

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9:00 PM - M4.15
Quantum Resistance of Copper Nanowire and its Comparison with Carbon Nanotube for Interconnect Applications from First Principles Calculations.

Yu Zhou 1 , Yiming Zhang 1 , Subbalakshmi Sreekala 1 , Pulickel Ajayan 1 , Saroj Nayak 1
1 Physics, RPI, Troy, New York, United States

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9:00 PM - M4.16
Ferromagnetic Metal Impregnated Multi-wall Nanotubes for Spin-sensitive Interconnects.

Swastik Kar 1 , Caterina Soldano 2 , Saroj Nayak 2 , Saikat Talapatra 3 , Pulickel Ajayan 1
1 Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Deparment of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, United States, 3 Department of Physics, Southern Illinois University at Carbondale, Carbondale, Illinois, United States

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9:00 PM - M4.17
A Unique Method of Forming either Pseudomorphic or Relaxed GexSi1-x Thin-Films on Insulator.

Khalid Hossain 1 , Jerome Duggan 1 , Floyd McDaniel 1 , Orin Holland 1 2
1 Department of Physics, University of North Texas, Denton, Texas, United States, 2 , Amethyst Research Inc., Ardmore, Oklahoma, United States

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9:00 PM - M4.18
ALD Precursors Based on Formamidinates for High-k Application.

Deodatta Shenai 1 , Huazhi Li 1 , Ralph Pugh 1
1 Metalorganics, Rohm and Haas Company, North Andover, Massachusetts, United States

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9:00 PM - M4.19
Oxygen Effect on the Pulsed Laser Deposition and Post-deposition Heat Treatment for Yttrium Iron Garnet Thin Films.

Michael Zaezjev 1 , M. Sekhar 1 , M. Ferrera 1 , L. Razzari 1 , G. Ross 1 , B. Holmes 2 , M. Sorel 2 , D. Hutchings 2 , S. Roorda 3 , R. Morandotti 1
1 , INRS-EMT, Varennes, Quebec, Canada, 2 Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow United Kingdom, 3 Physics Department, University of Montreal, Montreal, Quebec, Canada

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9:00 PM - M4.2
Contrast Enhancement Layers as Extensions of 193 nm Lithography: Materials and Viability Evaluation.

Libor Vyklicky 1 , Gregory McIntyre 2 , David Medeiros 1
1 , IBM T.J.Watson Res. Center, Yorktown Heights, New York, United States, 2 , IBM Corp., Hopewell Junction, New York, United States

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9:00 PM - M4.4
Interfacial Microstructure of SIMOX Materials for Photonic Application.

Dongwoo Suh 1 , Junghyung Pyo 1 , O-Kyun Kwon 1 , Gyungock Kim 1
1 , ETRI, Daejeon Korea (the Republic of)

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9:00 PM - M4.5
Fracture Pathways in Molecularly-passivated Mesoporous Silica Films Interfaced with Copper Wiring in Nanodevices.

Darshan Gandhi 1 , Amit Singh 1 , Binay Singh 1 , Richard Moore 2 , Eva Simonyi 3 , Michael Lane 3 , Ganapathiraman Ramanath 1
1 Materials Science and Engg., Rensselaer Polytechnic Institute, Troy, New York, United States, 2 College of Nanoscale Science & Engineering, State University of New York, Albany, New York, United States, 3 Microelectronics, T. J. Watson Research Center, IBM, Yorktown Heights, New York, United States

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9:00 PM - M4.6
High-Yield Approach of Pure-Silica-Zeolite MFI Nanocrystals and Applications in Ultra-Low-k Films

Minwei Sun 1 , Christopher Lew 1 , Yan Liu 1 , Yushan Yan 1
1 CEE, University of California, Riverside, Riverside, California, United States

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9:00 PM - M4.7
Understanding the Effects of Surfactant in Post-CMP Cleaning.

Dedy Ng 1 , Hong Liang 1
1 Mechanical Engineering, Texas A&M University, College Station, Texas, United States

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9:00 PM - M4.8
Thermal Stability of Sputtered Mo-WNx Thin Films for Cu Diffusion Barrier Applications.

Prodyut Majumder 1 , Christos Takoudis 2
1 Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois, United States, 2 Departments of Chemical Engineering and Bioengineering, University of Illinois at Chicago, Chiacgo, Illinois, United States

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9:00 PM - M4.9
Laterally Grown CNT Arrays for Lateral Interconnection.

Xiaofeng Wang 1 , SeongHo Moon 1 , Subramanya Mayya 1 , Sunwoo Lee 1 , DongWoo Kim 1 , KyungRae Byun 1 , Hongsik Yoon 1 , In-Seok Yeo 1 , Sung-Tae Kim 1 , Woosung Han 1
1 , Samsung Electronics, San#24 Nongseo-Ri,Giheung-Eup,Yongin-City,Gyeonggi-Do Korea (the Republic of)

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2007-11-29   Show All Abstracts

Symposium Organizers

Robert Geer State University of New York-Albany
James D. Meindl Georgia Institute of Technology
Rajashree (Raji) Baskaran Intel Corporation
Pulickel M. Ajayan Rice University
Ehrenfried Zschech AMD Saxony LLC & Co. KG
M5: Nanoscale Interconnects
Session Chairs
Raji Baskaran
Thursday AM, November 29, 2007
Hampton (Sheraton)

9:00 AM - **M5.1
First Principles Study of Charge and Spin Transport in Carbon Nanotubes and Graphenes for Interconnect Applications: From Electrons to Interconnects.

Yu Zhou 1 , Subbalakshmi Sreekala 2 , Philip Shemella 1 , Yiming Zhang 1 , Li Chen 1 , Catarina Soldano 1 2 , Swastik Kar 2 , Pulickel Ajayan 2 , Saroj Nayak 1
1 Physics Department, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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9:30 AM - **M5.2
Electromigration Reliability in Nanoscale Cu Interconnects.

Chao-Kun Hu 1 , L. Gignac 1 , B. Baker-O'Neal 1 , G. Bonilla 2 , E. Liniger 1 , P. Flaitz 2
1 , IBM, Yorktown Heights, New York, United States, 2 , IBM, Hopewell Junction, New York, United States

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10:00 AM - **M5.3
Mechanical Properties of Interconnects at the Nanoscale: Where is the Limit?

Ralph Spolenak 1
1 Department of Materials, ETH Zurich, Zurich Switzerland

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10:30 AM - M5.4
Colossal Interfacial Toughening of Copper-silica Interfaces using a Molecular Nanolayer for Nanodevice Wiring.

Darshan Gandhi 1 , Yu Zhou 2 , Saroj Nayak 2 , Michael Lane 3 , Ganapathiraman Ramanath 1
1 Materials Science and Engg., Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Physics, Rensselaer Polytechnic Institute, Troy, New York, United States, 3 Microelectronics, T. J. Watson Research Center, IBM, Yorktown Heights, New York, United States

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10:45 AM - M5.5
Effect of Grain Orientation on Stress-Induced Void Formation in Nanoscale Copper Interconnects.

Jin Ho An 1 , Paulo J. Ferreira 1
1 , University of Texas at Austin, Austin, Texas, United States

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11:00 AM - M5
BREAK

11:30 AM - **M5.6
DNA-Directed Assembly of Nanocomponents: A Versatile Approach to Nano-Materials, Nano-Components and Nano-Integration.

Richard Kiehl 1
1 Electrical and Computer Engineering Department, University of Minnesota, Minneapolis, Minnesota, United States

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12:00 PM - **M5.7
Electromigration Phenomena in Single-Crystalline Ag Nanowires.

B. Stahlmecke 1 , K. Roos 2 1 , K. Roos 3 1 , G. Dumpich 1 , Frank Meyer zu Heringdorf 1
1 Dept. of Physics and Center for Nanointegration Duisberg-Essen , University of Duisburg-Essen, Duisburg Germany, 2 , Bradley University, Peoria, Illinois, United States, 3 , Caterpillar Inc., Peoria, Illinois, United States

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12:30 PM - **M5.8
Nanostructured Thermal Materials.

Kenneth Goodson 1
1 Mechanical Engineering, Stanford University, Stanford, California, United States

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M6: Carbon Nanotube Based Interconnects
Session Chairs
Shashi Karna
Thursday PM, November 29, 2007
Hampton (Sheraton)

2:30 PM - **M6.1
Novel LSI Interconnect Using Bundles of Carbon Nanotubes Synthesized at a Low Temperature.

Shintaro Sato 1 , Tatsuhiro Nozue 1 , Akio Kawabata 1 , Daiyu Kondo 1 , Miho Mishima 1 , Tomo Murakami 1 , Takashi Hyakushima 1 , Mizuhisa Nihei 1 , Yuji Awano 1
1 , MIRAI-SELETE, Atsugi Japan

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3:00 PM - **M6.2
Theory and Measurements of the RF Impedance of Individual and Massively Parallel Single Walled Carbon Nanotubes.

Peter Burke 1 , Chris Rutherglen 1
1 , University of California at Irvine, Irvine, California, United States

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3:30 PM - **M6.3
Carbon Nanotube Interconnects - A Data Perspective.

Kevin O'Brien 1
1 Components Research, Intel Corporation, Hillsboro, Oregon, United States

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4:00 PM - M6
BREAK

4:30 PM - **M6.4
Modeling of Carbon Nanotube-Based Interconnect for Future VLSI Applications.

Yehia Massoud 1
1 , Rice University, Houston, Texas, United States

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5:00 PM - M6.5
Metallization of Nanotubes for Interconnect Applications.

Caterina Soldano 1 , Fung Ou 2 , Mancheri Shaijumon 2 , Swastik Kar 2 , Saroj Nayak 1 , Pulickel Ajayan 2
1 Deparment of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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5:15 PM - M6.6
Carbon Nanotubes as Interconnects in CMOS.

John Robertson 1
1 Engineering, Cambridge University, Cambridge United Kingdom

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5:30 PM - **M6.7
Chip Cooling with Tailored Carbon Nanotube Architectures.

Robert Vajtai 1 , K. Kordas 2 , G. Toth 2 , X. An 3 , P. Ajayan 3
1 Rensselaer Nanotechnology Center, RPI, Troy, New York, United States, 2 Department of Electrical and Information Engineering, University of Oulu, Oulu Finland, 3 3Department of Materials Science & Engineering, RPI, Troy, New York, United States

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