“for advancing the understanding of low-dimensional and nanoscale electronic materials, surfaces and interfaces, through elegant theoretical models that highlight the essential physics controlling growth, structure and electronic properties"
Jerry D. Tersoff is a principal research staff member at the IBM T.J. Watson Research Center. His recent research includes semiconductor nanowire growth; nanoscale effects in heteroepitaxy, including stress-driven self-assembly and self-organization;
and the physics of carbon nanotube devices. Tersoff's early work includes theories of scanning tunneling microscopy, Schottky barriers and heterojunction band lineups. He also developed model interatomic potentials that are widely used in materials
simulations. His work has been recognized by the Davisson-Germer Prize of the American Physical Society (APS), the Medard W. Welch Award of the American Vacuum Society (AVS) and the Materials Research Society (MRS) Medal. Tersoff is a member of the
National Academy of Engineering and a Fellow of the APS, AVS and MRS. He served on the Board of Directors of the Materials Research Society from 2003 to 2005. He received his BA degree in physics from Swarthmore College and his PhD degree in physics
from the University of California, Berkeley.