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2007 MRS Fall Meeting & Exhibit

November 26 - 30, 2007  | Boston
Meeting Chairs:
 Duane Dimos, Mary Galvin, David Mooney, Konrad Samwer

Symposium Q : Nitrides and Related Bulk Materials

2007-11-26   Show All Abstracts

Symposium Organizers

Ruediger Kniep Max-Planck-Institute for Chemical Physics of Solids
Francis J. DiSalvo Cornell University
Ralf Riedel Technische Universitaet Darmstadt
Zachary Fisk University of California
Yoshiyuki Sugahara Waseda University
Q1:
Session Chairs
Zachary Fisk
Monday PM, November 26, 2007
Back Bay B (Sheraton)

9:30 AM - Q1
Opening Remarks by Symposium Organizers

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9:45 AM - Q1.1
Raman Spectroscopy of Single Crystal ZnGeN2.

Timothy Peshek 1 , Kathleen Kash 1 , John Angus 2 , Tula Paudel 1 , Walter Lambrecht 1
1 Physics, Case Western Reserve University, Cleveland, Ohio, United States, 2 Chemical Engineering, Case Western Reserve University, Cleveland, Ohio, United States

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10:00 AM - Q1.2
Characteristic Features of PVT Growth of Bulk AlN and SiC Crystals: Modeling Analysis and Optimization.

Alexander Segal 1 , Denis Bazarevskiy 1 , Mark Ramm 1 , Yuri Makarov 2
1 , Soft-Impact, Ltd, St.Petersburg Russian Federation, 2 , STR, Inc, Richmond, Virginia, United States

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10:15 AM - **Q1.3
Solids with Mobile Nitrogen Ions.

Martin Lerch 1
1 Institut fuer Chemie, TU Berlin, Berlin Germany

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10:45 AM - Q1.4
MOCVD Growth of Hexagonal Nitride on Si(100).

Qian Sun 1 , Soon–Yong Kwon 1 , Jung Han 1
1 Electrical Engineering, Yale University, New Haven, Connecticut, United States

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11:00 AM - *
Break

11:30 AM - Q1.5
Negative or Zero Thermal Expansion in Silicon Dicarbodiimide, Si(NCN)2.

Peter Kroll 1 , Emanuel Ionescu 2 , Ralf Riedel 2
1 Department of Chemistry and Biochemistry, The University of Texas at Arlington, Arlington, Texas, United States, 2 Fachbereich Material- und Geowissenschaften, Technische Universität Darmstadt, Darmstadt Germany

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11:45 AM - Q1.6
Analysis of Structural Defect Distributions in Aluminum Nitride (AlN) Bulk Crystals Grown by the Seeded Physical Vapor Transport (PVT) Technique.

Balaji Raghothamachar 1 , Michael Dudley 1 , Rafael Dalmau 2 , Ziad Herro 2 , Zlatko Sitar 2 , Raoul Schlesser 2
1 Materials Science & Engineering, Stony Brook University, Stony Brook, New York, United States, 2 Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina, United States

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12:00 PM - Q1.7
Free-Standing Zinc-Blende (Cubic) GaN Substrates Grown by a Modified Molecular Beam Epitaxy Process.

Anthony Kent 1 , Sergei Novikov 1 , Nicola Stanton 1 , Richard Campion 1 , Charles Foxon 1
1 School of Physics and Astronomy, University of Nottingham, Nottingham United Kingdom

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12:15 PM - Q1.8
Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD).

Vibhu Jindal 1 , James Grandusky 1 , Mihir Tungare 1 , Neeraj Tripathi 1 , Fatemeh Shahedipour-Sandvik 1 , Peter Sandvik 2
1 , CNSE, Albany, New York, United States, 2 Global Research Centre, General Electric, Niskayuna, New York, United States

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12:30 PM - Q1.9
Phonons in Zn-IV-N2 Semiconductors.

Tula Paudel 1 , Walter Lambrecht 1
1 Department of Physics, Case Western Reserve University, Cleveland, Ohio, United States

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12:45 PM - Q1.10
Electronic Properties of Mixed Conducting Solid Oxides Containing Nitride.

Hans Wiemhoefer 1 , Mustafa Dogan 1 , Vera Ruehrup 1 , Ilia Valov 2 , Juergen Janek 2 , Martin Lerch 3 , Eberhard Schweda 4
1 Institute of Inorganic & Analytical Chem., University of Muenster, Muenster Germany, 2 Institute of Physical Chemistry, University of Giessen, Giessen Germany, 3 Institute of Chemistry, Technical University of Berlin, Berlin Germany, 4 Institute of Inorganic Chemistry, University of Tuebingen, Tuebingen Germany

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Q2
Session Chairs
Ralf Riedel
Monday PM, November 26, 2007
Back Bay B (Sheraton)

2:30 PM - **Q2.1
Ion-conducting Nitride Oxides: Transport, Reactions and Electrochemistry.

Juergen Janek 1 , Ilia Valov 1
1 Institute of Physical Chemistry, Justus-Liebig-University Giessen, Giessen Germany

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3:00 PM - Q2.2
Seeded Growth of AlN on m-plane Seed.

Peng Lu 1 , Rafael Dalmau 1 , Zlatko Sitar 1
1 Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina, United States

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3:15 PM - Q2.3
Growth and Texturing of Rare-earth Nitride Thin Films.

Jianping Zhong 1 , Andrew Preston 1 , B. Ruck 1 , H. Trodahl 1
1 School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington New Zealand

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3:45 PM - Q2.5
Contact Formation on GaN Investigated with Electron and Soft X-ray Spectroscopies.

Sujitra Pookpanratana 1 , Marcus Baer 1 , Lothar Weinhardt 1 , Clemens Heske 1 , Ryan France 2 , Tao Xu 2 , Theodore Moustakas 2 , Oliver Fuchs 3 , Monika Blum 3 , Jonathan Denlinger 4
1 Dept. of Chemistry, University of Nevada, Las Vegas, Las Vegas, Nevada, United States, 2 Dept. of Electrical and Computer Engineering, Boston University, Boston, Massachusetts, United States, 3 Experimentelle Physik II, Universität Würzburg, Würzburg Germany, 4 Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, United States

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4:00 PM - *
Break

4:30 PM - Q2.6
AlN Thermal Expansion Coefficients Determined from Bulk Crystals.

Stephan Figge 1 , Hanno Kroencke 1 , Boris Epelbaum 2 , Detlef Hommel 1
1 Department of Physics and Electrotechniques, University of Bremen, Bremen Germany, 2 Department of Materials Science, University of Erlangen, Erlangen Germany

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4:45 PM - Q2.7
Enhancement of Light Extraction Efficiency in GaInN Blue Light-emitting Diodes by Graded-refractive-index Antireflection Coating of Co-sputtered Titanium Dioxide and Silicon Dioxide.

Frank Mont 1 2 , David Poxson 1 3 , Jong Kim 1 2 , E. Fred Schubert 1 2 3 , Arthur Fischer 4 , Mary Crawford 4
1 Future Chips Constellation, Rensselaer Polytechic Institute, Troy, New York, United States, 2 Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechic Institute, Troy, New York, United States, 3 Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechic Institute, Troy, New York, United States, 4 Semiconductor Materials and Device Sciences, Sandia National Laboratories, Albuquerque, New Mexico, United States

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5:00 PM - Q2.8
HRTEM Observation of Dislocations in AlN Films.

Yuki Tokumoto 1 , Naoya Shibata 2 , Teruyasu Mizoguchi 2 , Masakazu Sugiyama 3 , Yukihiro Shimogaki 3 , Takahisa Yamamoto 1 , Yuichi Ikuhara 2
1 Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba, Japan, 2 Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo, Japan, 3 Department of Materials Science, The University of Tokyo, Bunkyo, Tokyo, Japan

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5:15 PM - Q2.9
Epitaxial Lateral Overgrowth of Thick AlN Layers by Migration Enhanced Metalorganic Chemical Vapor Deposition.

R. Jain 1 , J. Zhang 1 , W. Sun 1 , X. Hu 1 , M. Shatalov 1 , J. Deng 1 , I. Shtrum 1 , A. Lunev 1 , Y. Bilenko 1 , J. Yang 1 , R. Gaska 1
1 , Sensor Electronic Technology, Inc., Columbia, South Carolina, United States

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5:30 PM - Q2.10
Large Area Aluminum Nitride Substrates for UV Optoelectronics.

Robert Bondokov 1 , Kenneth Morgan 1 , Stephan Mueller 1 , Sandra Schujman 1 , Glen Slack 1 , Leo Schowalter 1
1 , Crystal IS, Inc. , Green Island, New York, United States

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5:45 PM - Q2.11
Sapphire Nano-Patterning and GaN Nano-heteroepitaxy.

Hongwei Li 1 , Jason Perkins 1 , Sreya Dutta 1 , Yik Khoon Ee 2 , Ronald Arif 2 , Nelson Tansu 2 , Richard Vinci 1 , Helen Chan 1 , Pavel Capek 3 , Naveen Jha 3 , Volkmar Dierolf 3
1 Center for Advanced Materials and Nanotechnology, Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania, United States, 2 Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania, United States, 3 Center for Optical Technologies, Department of Physics, Lehigh University, Bethlehem, Pennsylvania, United States

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2007-11-27   Show All Abstracts

Symposium Organizers

Ruediger Kniep Max-Planck-Institute for Chemical Physics of Solids
Francis J. DiSalvo Cornell University
Ralf Riedel Technische Universitaet Darmstadt
Zachary Fisk University of California
Yoshiyuki Sugahara Waseda University
Q3
Session Chairs
Rudiger Kneip
Tuesday AM, November 27, 2007
Back Bay B (Sheraton)

9:30 AM - Q3.1
Sublimation Growth and Defect Characterization of AlN Single Crystals.

Shaoping Wang 1 , Balaji Raghothamachar 2 , Michael Dudley 2 , Zaiyuan Ren 3 , Jung Han 3 , Andrew Timmerman 1
1 , Fairfield Crystal Technology, LLC, New Milford, Connecticut, United States, 2 Dept. of Materials Science & Engineering, State University of New York at Stony Brook, Stony Brook, New York, United States, 3 Dept. of Electrical Engineering, Yale University , New Haven, Connecticut, United States

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9:45 AM - Q3.2
Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes.

Mingwei Zhu 1 2 , Yong Xia 1 2 , Wei Zhao 1 2 , Yufeng Li 1 2 , Jayantha Senawiratne 1 2 , Shi You 1 2 , Theeradetch Detchprohm 1 2 , Christian Wetzel 1 2
1 Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, United States

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10:00 AM - Q3.3
Growth and Characterization of High-Performance GaN and AlxGa1-xN Ultraviolet Avalanche Photodiodes Grown on GaN Substrates.

Russell Dupuis 1 , Dongwon Yoo 1 , Jae Hyun Ryou 1 , Yun Zhang 1 , Shyh-Chiang Shen 1 , Jae Boum Limb 1 , Drew Hanser 2 , Edward Preble 2 , Keith Evans 2
1 School of ECE, Georgia Institute of Technology, Atlanta, Georgia, United States, 2 , Kyma Technologies, Raliegh, North Carolina, United States

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10:15 AM - **Q3.4
Synthesis and Physical Properties of LixZrNCl Superconductors.

Yasujiro Taguchi 1
1 , Institute for Materials Research, Tohoku Universiy, Sendai Japan

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10:45 AM - Q3.5
Investigation on Origin of Efficiency Droops in InGaN-based High-Power Blue Light Emitting Diodes.

Min-Ho Kim 1 2 3 , Martin Schubert 1 2 , Jong-Kyu Kim 1 2 , E. Schubert 1 2 , Hee Seok Park 3 , Yong Jo Park 3 , Joachim Piprek 4
1 Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Electrical, Computer, & Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States, 3 Central R&D Institute , Samsung Electro-Mechanics, Su-Won, Gyunggi-Do, Korea (the Republic of), 4 , NUSOD Institute LLC, Newark, Delaware, United States

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11:00 AM - *
Break

11:45 AM - Q3.7
Growth and Characterization of Non-polar GaN Multi-Quantum-Well Structures on LiAlO2.

H. Behmenburg 1 , A. Alam 1 , Y. Dikme 1 , B. Dlugosch 2 , C. Sommerhalter 2 , N. Rzheutski 3 , R. Schreiner 1 , E. Lutsenko 3 , A. Gurskii 3 , G. Yablonskii 3 , M. Heuken 1
1 , AIXTRON AG, Aachen Germany, 2 , AIXTRON Inc., Sunnyvale, California, United States, 3 , National Academy of Sciences of Belarus, Minsk Belarus

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12:00 PM - Q3.8
Green Light Emitting Diodes under Photon and Electron Beam Modulation.

Yufeng Li 1 2 , Jayantha Senawiratne 1 2 , Yong Xia 1 2 , Mingwei Zhu 1 2 , Wei Zhao 1 2 , Theeradetch Detchprohm 1 2 , Christian Wetzel 1 2
1 Future Chips Constellation, Rensselaer Polytechinic Institute, Troy, New York, United States, 2 Physics, Applied Physics and Astronomy, Rensselaer Polytechinic Institute, Troy, New York, United States

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12:15 PM - Q3.9
Nanoporous GaN p-n Junctions Fabricated by a Simple Chemical Vapor Deposition Approach.

Dominique Drouin 1 , Juan Carvajal 2 , M. Aguilo 2 , Arnaud Beaumont 1 , F. Diaz 2 , J. Rojo 3
1 Nanofabrication and nanocharacterization research center, Electrical and computer engineering, Universite de Sherbrooke, Sherbrooke, Quebec, Canada, 2 Física i Cristalolografia de Materials, Universitat Rovira i Virgili, Tarragona Spain, 3 , GE Global Research, Niscayuna, New York, United States

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12:30 PM - Q3.10
Photoluminescence of Gallium Nitride in Air with Acidic and Basic Vapors.

Vidhya Chakrapani 1 , John Angus 1 , Kathleen Kash 1 , Chandrashekar Pendyala 2 , Mahendra Sunkara 2
1 , Case Western Reserve University, Cleveland, Ohio, United States, 2 , University of Louisville, Louisville, Kentucky, United States

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Q4
Session Chairs
Francis J. DiSalvo
Tuesday PM, November 27, 2007
Back Bay B (Sheraton)

3:00 PM - Q4.2
Molecular Beam Epitaxy of Nonpolar Cubic AlxGa1-xN/GaN Epilayers.

Donat As 1 , Stefan Potthast 1 , Joerg Schoermann 1 , Elena Tschumak 1 , Marcio de Godoy 1 , Klaus Lischka 1
1 Department of Physics, University of Paderborn, Paderborn Germany

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3:15 PM - Q4.3
Two- and Three-Dimensional Design of InGaN White Light Emitting Diodes Nanostructures.

Zhiwen Liang 1 , Edwin Garcia 1
1 Materials Engineering, Purdue University, West Lafayette, Indiana, United States

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3:45 PM - Q4.5
Multifunctional Ultracomposites: Piezoelectric Materials Grown on Binary Metallic Glasses.

Michael Brougham 1 2 , Colin Ophus 1 2 , Steven Melenchuk 1 2 , Jia Luo 1 2 , Erik Luber 1 2 , Mohsen Danaie 1 2 , Fraser Forbes 1 , Velimir Radmilovic 3 , Zonghoon Lee 3 , David Mitlin 1 2
1 Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta, Canada, 2 , National Institute for Nanotechnology, Edmonton, Alberta, Canada, 3 NCEM, Lawrence Berkeley National Laboratory, University of California, Berkeley, California, United States

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4:00 PM - *
Break

4:30 PM - Q4.6
GaN Nanowalls Grown by RF-plasma Assisted Molecular Beam Epitaxy.

Akihiko Kikuchi 1 2 , Takayuki Hoshino 1 , Shunsuke Ishizawa 1 2 , Hiroto Sekiguchi 1 2 , Katsumi Kishino 1 2
1 Engineering of Electrical and Electronics, Sophia University, Tokyo Japan, 2 , CREST, JST Japan

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4:45 PM - **Q4.7
Semiconducting and Metallic Perovskite Nitrides: Structures and Properties.

Rainer Niewa 1
1 Chemistry, TU Munich, Garching Germany

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5:15 PM - Q4.8
LED it be.

Andries Meijerink 1 , Volker Bachmann 1 2 , Cees Ronda 1 2
1 Chemistry, Debye Institute, Utrecht Netherlands, 2 , Philips Research Labortaories, Aachen Germany

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5:30 PM - Q4.9
Polarization Anisotropy in the Light Emission of Blue GaInN/GaN Light-emitting Diodes Grown on (0001) Oriented Sapphire Substrates.

Martin Schubert 1 , Sameer Chhajed 1 , Jong Kim 1 , E. Fred Schubert 1 2 , Jaehee Cho 3
1 Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Department of Physics, Applied Physics, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States, 3 Opto System Laboratory, Corporate R&D Institute, Samsung Electro-Mechanics, Suwoon Korea (the Republic of)

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2007-11-28   Show All Abstracts

Symposium Organizers

Ruediger Kniep Max-Planck-Institute for Chemical Physics of Solids
Francis J. DiSalvo Cornell University
Ralf Riedel Technische Universitaet Darmstadt
Zachary Fisk University of California
Yoshiyuki Sugahara Waseda University
Q5
Session Chairs
Yoshiyuki Sugahara
Wednesday AM, November 28, 2007
Back Bay B (Sheraton)

9:30 AM - Q5.1
Host Dependence of Photoluminescence from Eu-implanted AlGaN Alloys.

Kevin O'Donnell 1 , Ke Wang 1 , Benjamin Hourahine 1 , Robert Martin 1 , Katharina Lorenz 2 , Eduardo Alves 2 , Ian Watson 3
1 Physics, University of Strathclyde, Glasgow United Kingdom, 2 , ITN, Sacavem Portugal, 3 Photonics, University of Strathclyde, Glasgow United Kingdom

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9:45 AM - Q5.2
Electron Band Structure of MnGaN.

Dimiter Alexandrov 1 , Nikolaus Dietz 2 , Ian Ferguson 3 , Hang Yu 1
1 Electrical Engineering, Lakehead University, Thunder Bay, Ontario, Canada, 2 Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia, United States, 3 School of Elect. & Comp. Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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10:00 AM - Q5.3
Deep Ultraviolet Photoluminescence Studies of AlN Epilayers Grown on Different Substrates.

Neeraj Nepal 2 , B. Pantha 2 , T. Tahtamouni 2 , J. Li 2 , M. Nakarmi 2 , J. Lin 2 , H. Jiang 2 , J. Zavada 3
2 Department of Physics, Kansas State University, Manhattan, Kansas, United States, 3 , U. S. Army Research Office, Durham, North Carolina, United States

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10:15 AM - **Q5.4
Shock Wave Synthesis and Exploration of High-pressure Nitrides and Related Materials.

Toshimori Sekine 1
1 , National Institute for Materials Science, Tsukuba Japan

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10:45 AM - Q5.5
Superfluorescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation.

Jayantha Senawiratne 1 2 , Stephanie Tomasulo 2 , Theeradetch Detchprohm 1 2 , Mingwei Zhu 1 2 , Yufeng Li 1 2 , Wei Zhao 1 2 , Yong Xia 1 2 , Peter Persans 2 , Christian Wetzel 1 2
1 Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, United States

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11:00 AM - *
Break

11:30 AM - Q5.6
Magnetic Exchange Interactions in Mn-doped ScN.

Aditi Herwadkar 1 , Walter Lambrecht 2 , Mark Schilfgaarde 3
1 Department of Physics and Astronomy, University of Nebraska Lincoln, Lincoln, Nebraska, United States, 2 Department of Physics, Case Western Reserve University , Cleveland , Ohio, United States, 3 Department of Chemical and Materials Engineering, Arizona State University , Tempe, Arizona, United States

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11:45 AM - Q5.7
Blue Light Emitting Diodes Based on ZnO/GaN Wafer Bonding.

Akihiko Murai 1 , Daniel Thompson 1 , Natalie Fellows 1 , Hitoshi Sato 1 , Umesh Mishra 1 , Shuji Nakamura 1 , Steven DenBaars 1
1 , University of California Santa Barbara, Santa Barbara, California, United States

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12:00 PM - Q5.8
Alkaline-earth Nitrodocobaltates(I) Containing [CoIN2]5- Complexes.

Joanna Bendyna 1 , Peter Hoehn 1 , Walter Schnelle 1 , Ruediger Kniep 1
1 chemistry, Max-Planck-InstituteCPFS, Dresden Germany

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12:15 PM - Q5.9
Comparison of UV, Blue- and Yellow-Band Micro-Photoluminescence Maps Near Defects in Semi-Insulating GaN.

Bruce Claflin 1 2 , David Look 1 2
1 Materials and Manufacturing Directorate, AFRL/MLPS, WPAFB, Ohio, United States, 2 Semiconductor Research Center, Wright State University, Dayton, Ohio, United States

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12:30 PM - Q5.10
Electronic and Magnetic Properties of Mixed Valence Monoclinic SrN.

Piotr Boguslawski 1 , Oksana Volnianska 1
1 , Institute of Physics PAN, Warsaw Poland

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Q6
Session Chairs
M. Lerch
Wednesday PM, November 28, 2007
Back Bay B (Sheraton)

2:30 PM - **Q6.1
Thermodynamic and Kinetic Investigations in the System Ga-O-N.

Manfred Martin 1
1 Institute of Physical Chemistry, RWTH Aachen University, Aachen Germany

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3:00 PM - Q6.2
Density Functional Theory Calculations for the Binding Energies and Adatom Diffusion on Strained AlN (0001) and GaN (0001) Surfaces.

Vibhu Jindal 1 , James Grandusky 1 , Neeraj Tripathi 1 , Mihir Tungare 1 , James Raynolds 1 , Fatemeh Shahedipour Sandvik 1
1 , CNSE, Albany, New York, United States

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3:15 PM - Q6.3
Light Emitting Diode and Lasers Beyond 1.55 μm with GaAsSbN/GaAs Single Quantum Wells

Kalyan Nunna 1 , Shanthi Iyer 1 , Jia Li 1 , Ward Collis 1
1 Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina, United States

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3:30 PM - Q6.4
GaN Nanowires for Label-free Bio-sensing Applications.

Li-Chyong Chen 1 , Chin-Pei Chen 1 , Abhijit Ganguly 1 , Chen-Hao Wang 1 , Chih-Wei Hsu 2 , Yu-Kuei Hsu 2 , Kuei-Hsien Chen 1 2
1 Center for Condensed Matter Sciences, National Taiwan University , Taipei Taiwan, 2 Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei Taiwan

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3:45 PM - Q6.5
Spinel-type Structured Gallium Oxonitride with Composition Ga3O3N.

Isabel Kinski 1 , Stefanie Hering 2 , Carmen Zvoriste 1 , Ralf Riedel 1 , Hubert Huppertz 2
1 Institute of Materials Science, Darmstadt University of Technology, Darmstadt Germany, 2 , Ludwig-Maximilians-Univeristaet Munich, Munich Germany

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4:00 PM - *
Break

4:30 PM - Q6.6
Growth and Characterization of Zinc-blende InN Thin Films on R-plane Sapphire Substrates by Molecular Beam Epitaxy.

Ching-Lien Hsiao 1 , Ting-Wei Liu 2 , Hsu-Cheng Hsu 1 , Wen-Yu Hsiao 3 , Chih-Chung Yang 3 , Chia-Chun Chen 2 , Li-Chyong Chen 1 , Kuei-Hsien Chen 4 1
1 Center for Condensed Matter Sciences, National Taiwan University , Taipei Taiwan, 2 Department of Chemistry, National Taiwan Normal University, Taipei Taiwan, 3 Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei Taiwan, 4 Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei Taiwan

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4:45 PM - Q6.7
High Stress PECVD Silicon Nitride Films For 65nm SOI Technology and Beyond.

Hartmut Ruelke 1 , Volker Jaschke 1 , Kai Frohberg 1 , Mihaela Balseanu 2 , Tsutomu Kiyohara 2 , Li-Qun Xia 2 , Derek Witty 2 , Hichem M'Saad 2 , Olaf Hiller 3 , Wolfgang Senninger 3
1 , Advanced Micro Devices, AMD Fab36 LLC& Co. KG, , Dresden Germany, 2 , Applied Materials, Sunnyvale, California, United States, 3 , Applied Materials, Dresden Germany

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