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2007 MRS Fall Meeting & Exhibit

November 26 - 30, 2007  | Boston
Meeting Chairs:
 Duane Dimos, Mary Galvin, David Mooney, Konrad Samwer

Symposium Q : Nitrides and Related Bulk Materials

2007-11-26   Show All Abstracts

Symposium Organizers

Ruediger Kniep Max-Planck-Institute for Chemical Physics of Solids
Francis J. DiSalvo Cornell University
Ralf Riedel Technische Universitaet Darmstadt
Zachary Fisk University of California
Yoshiyuki Sugahara Waseda University
Q1:
Session Chairs
Zachary Fisk
Monday PM, November 26, 2007
Back Bay B (Sheraton)

9:30 AM - Q1
Opening Remarks by Symposium Organizers

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9:45 AM - Q1.1
Raman Spectroscopy of Single Crystal ZnGeN2.

Timothy Peshek 1 , Kathleen Kash 1 , John Angus 2 , Tula Paudel 1 , Walter Lambrecht 1
1 Physics, Case Western Reserve University, Cleveland, Ohio, United States, 2 Chemical Engineering, Case Western Reserve University, Cleveland, Ohio, United States

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10:00 AM - Q1.2
Characteristic Features of PVT Growth of Bulk AlN and SiC Crystals: Modeling Analysis and Optimization.

Alexander Segal 1 , Denis Bazarevskiy 1 , Mark Ramm 1 , Yuri Makarov 2
1 , Soft-Impact, Ltd, St.Petersburg Russian Federation, 2 , STR, Inc, Richmond, Virginia, United States

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10:15 AM - **Q1.3
Solids with Mobile Nitrogen Ions.

Martin Lerch 1
1 Institut fuer Chemie, TU Berlin, Berlin Germany

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10:45 AM - Q1.4
MOCVD Growth of Hexagonal Nitride on Si(100).

Qian Sun 1 , Soon–Yong Kwon 1 , Jung Han 1
1 Electrical Engineering, Yale University, New Haven, Connecticut, United States

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11:00 AM - *
Break

11:30 AM - Q1.5
Negative or Zero Thermal Expansion in Silicon Dicarbodiimide, Si(NCN)2.

Peter Kroll 1 , Emanuel Ionescu 2 , Ralf Riedel 2
1 Department of Chemistry and Biochemistry, The University of Texas at Arlington, Arlington, Texas, United States, 2 Fachbereich Material- und Geowissenschaften, Technische Universität Darmstadt, Darmstadt Germany

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11:45 AM - Q1.6
Analysis of Structural Defect Distributions in Aluminum Nitride (AlN) Bulk Crystals Grown by the Seeded Physical Vapor Transport (PVT) Technique.

Balaji Raghothamachar 1 , Michael Dudley 1 , Rafael Dalmau 2 , Ziad Herro 2 , Zlatko Sitar 2 , Raoul Schlesser 2
1 Materials Science & Engineering, Stony Brook University, Stony Brook, New York, United States, 2 Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina, United States

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12:00 PM - Q1.7
Free-Standing Zinc-Blende (Cubic) GaN Substrates Grown by a Modified Molecular Beam Epitaxy Process.

Anthony Kent 1 , Sergei Novikov 1 , Nicola Stanton 1 , Richard Campion 1 , Charles Foxon 1
1 School of Physics and Astronomy, University of Nottingham, Nottingham United Kingdom

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12:15 PM - Q1.8
Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD).

Vibhu Jindal 1 , James Grandusky 1 , Mihir Tungare 1 , Neeraj Tripathi 1 , Fatemeh Shahedipour-Sandvik 1 , Peter Sandvik 2
1 , CNSE, Albany, New York, United States, 2 Global Research Centre, General Electric, Niskayuna, New York, United States

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12:30 PM - Q1.9
Phonons in Zn-IV-N2 Semiconductors.

Tula Paudel 1 , Walter Lambrecht 1
1 Department of Physics, Case Western Reserve University, Cleveland, Ohio, United States

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12:45 PM - Q1.10
Electronic Properties of Mixed Conducting Solid Oxides Containing Nitride.

Hans Wiemhoefer 1 , Mustafa Dogan 1 , Vera Ruehrup 1 , Ilia Valov 2 , Juergen Janek 2 , Martin Lerch 3 , Eberhard Schweda 4
1 Institute of Inorganic & Analytical Chem., University of Muenster, Muenster Germany, 2 Institute of Physical Chemistry, University of Giessen, Giessen Germany, 3 Institute of Chemistry, Technical University of Berlin, Berlin Germany, 4 Institute of Inorganic Chemistry, University of Tuebingen, Tuebingen Germany

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Q2
Session Chairs
Ralf Riedel
Monday PM, November 26, 2007
Back Bay B (Sheraton)

2:30 PM - **Q2.1
Ion-conducting Nitride Oxides: Transport, Reactions and Electrochemistry.

Juergen Janek 1 , Ilia Valov 1
1 Institute of Physical Chemistry, Justus-Liebig-University Giessen, Giessen Germany

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3:00 PM - Q2.2
Seeded Growth of AlN on m-plane Seed.

Peng Lu 1 , Rafael Dalmau 1 , Zlatko Sitar 1
1 Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina, United States

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3:15 PM - Q2.3
Growth and Texturing of Rare-earth Nitride Thin Films.

Jianping Zhong 1 , Andrew Preston 1 , B. Ruck 1 , H. Trodahl 1
1 School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington New Zealand

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3:45 PM - Q2.5
Contact Formation on GaN Investigated with Electron and Soft X-ray Spectroscopies.

Sujitra Pookpanratana 1 , Marcus Baer 1 , Lothar Weinhardt 1 , Clemens Heske 1 , Ryan France 2 , Tao Xu 2 , Theodore Moustakas 2 , Oliver Fuchs 3 , Monika Blum 3 , Jonathan Denlinger 4
1 Dept. of Chemistry, University of Nevada, Las Vegas, Las Vegas, Nevada, United States, 2 Dept. of Electrical and Computer Engineering, Boston University, Boston, Massachusetts, United States, 3 Experimentelle Physik II, Universität Würzburg, Würzburg Germany, 4 Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, United States

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4:00 PM - *
Break

4:30 PM - Q2.6
AlN Thermal Expansion Coefficients Determined from Bulk Crystals.

Stephan Figge 1 , Hanno Kroencke 1 , Boris Epelbaum 2 , Detlef Hommel 1
1 Department of Physics and Electrotechniques, University of Bremen, Bremen Germany, 2 Department of Materials Science, University of Erlangen, Erlangen Germany

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4:45 PM - Q2.7
Enhancement of Light Extraction Efficiency in GaInN Blue Light-emitting Diodes by Graded-refractive-index Antireflection Coating of Co-sputtered Titanium Dioxide and Silicon Dioxide.

Frank Mont 1 2 , David Poxson 1 3 , Jong Kim 1 2 , E. Fred Schubert 1 2 3 , Arthur Fischer 4 , Mary Crawford 4
1 Future Chips Constellation, Rensselaer Polytechic Institute, Troy, New York, United States, 2 Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechic Institute, Troy, New York, United States, 3 Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechic Institute, Troy, New York, United States, 4 Semiconductor Materials and Device Sciences, Sandia National Laboratories, Albuquerque, New Mexico, United States

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