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2013 MRS Fall Meeting Logo2013 MRS Fall Meeting & Exhibit

December 1-6, 2013 | Boston
Meeting Chairs: Charles Black, Elisabetta Comini, Gitti Frey, Kristi Kiick, Loucas Tsakalakos

Symposium T : Compound Semiconductor Materials and Devices

2013-12-02   Show All Abstracts

Symposium Organizers

L. Douglas Bell, Jet Propulsion Laboratory
F. (Shadi) Shahedipour-Sandvik, University at Albany - SUNY
Kenneth A. Jones, Army Research Laboratory
Andrew Clark, Translucent Inc.
Kenji Ohmori, University of Tsukuba

Symposium Support

Army Research Office
T2: Defect Generation and Characterization
Session Chairs
Robert Hull
Joshua Smith
Monday PM, December 02, 2013
Hynes, Level 2, Room 202

2:30 AM - *T2.01
Mapping Dislocation Generation in Semiconductor Thin Film Growth and Processing: Materials Phylogenetics

Robert Hull 1 Hamed Parvaneh 1 Dustin Andersen 1

1RPI Troy USA

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3:00 AM - T2.02
Mechanisms for Layer Relaxation and Tilt Generation in Thick Metamorphic Buffer Layers Grown by Hydride Vapor Phase Epitaxy

Kevin L Schulte 1 Adam W Wood 2 Susan E Babcock 2 Thomas F Kuech 1

1University of Wisconsin-Madison Madison USA2University of Wisconsin-Madison Madison USA

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3:15 AM - T2.03
GaSb on Si: Structural Defects and Their Effect on Surface Morphology and Electrical Properties

Serge Oktyabrsky 1 Vadim Tokranov 1 Shailesh Madisetti 1 Andrew Greene 1 Steven Novak 1 Michael Yakimov 1 Steven Bentley 2 Ajey Jacob 2

1University at Albany Albany USA2GLOBALFOUNDRIES at Albany NanoTech Albany USA

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3:30 AM - T2.04
Real-Time Characterization of Structural Defect Evolution in AlGaN/GaN HEMTs during On-State Bias Application

Hessam Ghassemi 1 Andrew Lang 1 Ronghua Wang 2 Huili Xing 2 David Meyer 3 Mitra Taheri 1

1Drexel Univ Philadelphia USA2University of Notre Dame Notre Dame USA3Naval Research Lab Washington USA

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3:45 AM - T2.05
Comparative Chemical Wet Etching Studies of Semipolar (11-22) Undoped and Mg-Doped GaN Grown on M-Sapphire

Hye-Rin Yi 1 Ki-Ryong Song 1 Sung-Nam Lee 1

1Korea Polytechnic University Siheung-si Republic of Korea

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4:00 AM - T2
BREAK

4:30 AM - T2.06
Prospects of Positron Annihilation Spectroscopy in Studying the Atomic-Scale Structure of Ternary III-N Semiconductors of Varying Homogeneity

Filip Tuomisto 1 Ilja Makkonen 1

1Aalto University Aalto Finland

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4:45 AM - T2.07
Electrical and Optical Properties of Carbon Impurities in the Nitride Semiconductors

John L Lyons 1 Anderson Janotti 1 Chris G Van de Walle 1

1UCSB Santa Barbara USA

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5:00 AM - T2.08
Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Containing Various Carbon Concentrations

Yoshitaka Nakano 1 Yoshihiro Irokawa 2 Masatomo Sumiya 2 Yasunobu Sumida 3 Shuichi Yagi 3 Horoji Kawai 3

1Chubu University Kasugai Japan2National Institute for Materials Science Tsukuba Japan3POWDEC Oyama Japan

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5:15 AM - T2.09
Modeling Point Defect Diffusion in Compound Semiconductor Alloys

Normand Modine 1 Alan F. Wright 1 Stephen R. Lee 1 Stephen M. Foiles 1 Corbett C. Battaile 1 John C. Thomas 2 Anton Van der Ven 2

1Sandia National Laboratories Albuquerque USA2University of Michigan Ann Arbor USA

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5:30 AM - T2.10
Charge Density Gradient at the N-Polarity Face of Ammonothermal Si-Doped GaN Probed by Confocal Raman Scattering

Luis Artus 1 Ramon Cusco 1 Nuria Domenech-Amador 1 Juan Jimenez 2 Bugou Wang 3 4 Matthew Mann 4 David Look 3 5

1Inst. Jaume Almera (C.S.I.C.) Barcelona Spain2GdS Optronlab, Univ.Valladolid Valladolid Spain3Air Force Research Lab, Sensors Directorate Dayton USA4Solid State Scientific Corporation Nashua USA5Wright State University Dayton USA

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5:45 AM - T2.11
Electrically Active Defects in GaAsBi and GaAs Grown at Low Temperatures

P. M. Mooney 1 K. P. Watkins 1 Zenan Jiang 1 A. F. Basile 1 R. B. Lewis 2 V. Bahrami-Yekta 2 M. Masnadi-Shirazi 2 D. A. Beaton 2 T. Tiedje 2

1Simon Fraser University Burnaby Canada2University of Victoria Victoria Canada

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T3: Poster Session I
Session Chairs
Monday PM, December 02, 2013
Hynes, Level 1, Hall B

9:00 AM - T3.01
Effect of Lithium Ion Implantation on the Optical Properties of In0.15Ga0.85As Capped InAs/GaAs Quantum-Dot Heterostructures

Dipankar Biswas 1 Arjun Mandal 1 Subhananda Chakrabarti 1

1Indian Institute of Technology Mumbai India

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9:00 AM - T3.02
Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

Yongkun Sin 1 Stephen LaLumondiere 1 William Lotshaw 1 Steven C. Moss 1

1The Aerospace Corporation El Segundo USA

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9:00 AM - T3.03
Highly Efficient Quantum Dot Light Emitting Diodes Based on Environmentally-Benign InP@ZnSeS Quantum Dots

Jaehoon Lim 1 2 Myeongjin Park 1 Wan Ki Bae 4 Donggu Lee 1 Jeonghun Kwak 5 Seonghoon Lee 3 Kookheon Char 2 Changhee Lee 1

1Seoul National University Seoul Republic of Korea2Seoul National University Seoul Republic of Korea3Seoul National University Seoul Republic of Korea4Los Alamos National Laboratory Los Alamos USA5Dong-A University Busan Republic of Korea

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9:00 AM - T3.05
Growth and Characterization of Non-Polar (10-10) ZnO Nanorods Grown on M-Plane Sapphire Substrate

Hyo-Soo Son 1 Nak-Jung Choi 1 Il-Kyu Park 2 Sung- Nam Lee 1

1Korea Polytechnic University Siheung-si Republic of Korea2Yeungnam University Gyeongsan-Si Republic of Korea

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9:00 AM - T3.08
Effects of Y2 Ordering on the Properties of III-V Ternary Semiconductor Alloys

Dongguo Chen 1

1New Jersey Inst. of Tech. Newark USA

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9:00 AM - T3.09
Characterization of Traps in High-Resistivity MOCVD GaN Doped with Carbon

Yutaka Tokuda 1 Takeshi Tanaka 2 3 Kenji Shiojima 2 Yohei Otoki 3

1Aichi Institute of Technology Toyota Japan2University of Fukui Fukui Japan3Hitachi Cable Ltd. Hitachi Japan

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T1: Nanostructures
Session Chairs
Chennupati Jagadish
Michelle Povinelli
Monday AM, December 02, 2013
Hynes, Level 2, Room 202

9:30 AM - *T1.01
Modeling of III-V Nanowire Solar Cells

Ningfeng Huang 1 Michelle Povinelli 1

1University of Southern California Los Angeles USA

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10:00 AM - T1.02
The Formation Mechanism of Binary Semiconductor Nanomaterials

Kui Yu 1

1National Research Council Canada Ottawa Canada

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10:15 AM - T1.03
Optical Fabrication of Semiconductor Single-Crystalline Microspheres in Superfluid Helium

Shinya Okamoto 1 Satoshi Ichikawa 2 Yosuke Minowa 1 Masaaki Ashida 1

1Osaka University Toyonaka Japan2Osaka University Toyonaka Japan

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10:30 AM - T1.04
Control of Population Dynamics in SML Stacks by Spatially Coupling to Stranski-Krastanov Quantum Dots Based on InAs/GaAs

Thomas Switaiski 1 Jan-Hindrik Schulze 2 Dorian E. Alden Angeles 2 Tim David Germann 2 Andre Strittmatter 2 Axel Hoffmann 2 Udo W. Pohl 2 Ulrike Woggon 1

1TU Berlin Berlin Germany2TU Berlin Berlin Germany

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10:45 AM - T1.05
Whispering-Gallery-Mode Lasing from GaN Microdisks Grown on Graphene Microdots

Hyeonjun Baek 1 Chul-Ho Lee 1 2 Kunook Chung 1 Gyu-Chul Yi 1

1Seoul National University Seoul Republic of Korea2Columbia University New York USA

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11:00 AM - T1
BREAK

11:30 AM - T1.06
Nanogenerators as Active Sensors for Variable Practical Applications

Long Lin 1 Fengru Fan 1 Ya Yang 1 Rui Zhang 1 Youfan Hu 1 Qingshen Jing 1 Zhong Lin Wang 1 2

1Georgia Institute of Technology Atlanta USA2Chinese Academy of Sciences Beijing China

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11:45 AM - T1.07
Production and Biofunctionalization of Elongated Semiconducting Nanocrystals for Ex-Vivo Applications

Tobias Jochum 1 Daniel Ness 1 Katja Werner 1 Jan Niehaus 1 Horst Weller 1 2

1CAN GmbH Hamburg Germany2University of Hamburg Hamburg Germany

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12:00 PM - *T1.08
Semiconductor Nanowires for Optoelectronic Device Applications

Chennupati Jagadish 1

1The Australian National Univ Canberra Australia

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12:30 PM - T1.09
Vapor-Liquid-Solid Growth of Serrated GaN Nanowires: Shape Selection Driven by Kinetic Frustration

Moneesh Upmanyu 1 Latika Menon 2

1Northeastern University Boston USA2Northeastern University Boston USA

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12:45 PM - T1.10
Enhanced Performances of GaN Nanobelt Based Photodetector by Piezo-Phototronic Effect

Ruomeng Yu 1 Caofeng Pan 2 Youfan Hu 1 Zhong Lin Wang 1 2

1Georgia Tech Atlanta USA2Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences Beijing China

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2013-12-03   Show All Abstracts

Symposium Organizers

L. Douglas Bell, Jet Propulsion Laboratory
F. (Shadi) Shahedipour-Sandvik, University at Albany - SUNY
Kenneth A. Jones, Army Research Laboratory
Andrew Clark, Translucent Inc.
Kenji Ohmori, University of Tsukuba

Symposium Support

Army Research Office
T5: III-Nitrides II: Optical Devices
Session Chairs
F. (Shadi) Shahedipour-Sandvik
Russell Dupuis
Tuesday PM, December 03, 2013
Hynes, Level 2, Room 202

2:30 AM - T5.01
Low-Threshold Optically Pumped AlGaN-Based Deep-UV Multiple-Quantum-Well Lasers Grown by MOCVD

Russell Dupuis 1 Yuh-Shiuan Liu 1 Tsung-Ting Kao 1 Zachary Lochner 1 Xiaohang Li 1 Mahbub Satter 1 Jae-Hyun Ryou 1 3 Theeradetch Detchphrom 1 Shyh-Chiang Shen 1 P. Douglas Yoder 1 Yong Wei 2 Xie Hongne 2 Alec Fischer 2 Fernando Ponce 2

1Georgia Institute of Technology Atlanta USA2Arizona State University Tempe USA3University of Houston Houston USA

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2:45 AM - T5.02
Development of Removal Free Vertical Deep Ultraviolet Light Emitting Diode (Ref-V-DUVLED) Using AlGaN Nitride Semiconductors on Si+(111) Substrate

Noriko Kurose 1 Kentaro Shibano 2 Tsutomu Araki 2 Yoshinobu Aoyagi 1

1Ritsumeikan University Kusatsu, Japan2Ritsumeikan University Kusatsu Japan

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3:00 AM - T5.03
Polarized InGaN Green Light Emitting Diode by Integrating Bilayer Nanowire-Grid Polarizer

Liyuan Deng 1 Soo Jin Chua 1 2 Jing Hua Teng 2

1National University of Singapore Singapore Singapore2Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR) Singpaore Singapore

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3:15 AM - T5.04
Suppression of Auger-Stimulated Efficiency Droop in Nitride-Based Light Emitting Diodes

Roman Vaxenburg 1 Efrat Lifshitz 1 Alexander L. Efros 2

1Technion - Israel Institute of Technology Haifa Israel2Naval Research Laboratory Washington USA

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3:30 AM - T5.05
Piezo-Phototronic Effect on Electroluminescence Properties of P-Type GaN Thin Films

Youfan Hu 1 Yan Zhang 1 Long Lin 1 Yong Ding 1 Guang Zhu 1 Zhong Lin Wang 1

1Georgia Institute of Technology Atlanta USA

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3:45 AM - T5.06
P-type Doped 2D/3D Graphene-Based Transparent Conductive Electrodes in GaN-Based LEDs

Byung-Jae Kim 1 Michael A. Mastro 2 Jihyun Kim 1

1Korea University Seoul Republic of Korea2US Naval Research Laboratory Washington USA

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4:00 AM - T5
BREAK

4:30 AM - T5.07
First Principles Investigation of Water Adsorption and Charge Transfer on III-V(110) Semiconductor Surfaces

Kristen S. Williams 1 Joseph L. Lenhart 1 Jan W. Andzelm 1 Sumith V. Bandara 2 Neil F. Baril 2 Nathan C. Henry 2 Meimei Z. Tidrow 2

1U.S. Army Research Laboratory Aberdeen Proving Ground USA2CERDEC Ft. Belvoir USA

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4:45 AM - T5.08
Optimization of the AlN Thickness for the Polarization Engineered Photocathode Consisting of Only N-Type Nitrides for Water Splitting

Akihiro Nakamura 1 Katsushi Fujii 2 Masakazu Sugiyama 1 Yoshiaki Nakano 1

1the University of Tokyo Tokyo Japan2the University of Tokyo Tokyo Japan

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5:00 AM - T5.09
Achieving >20% Efficiency Using a Vacuum Thermionic Energy Converter Featuring a III-Nitride, Negative Electron Affinity Anode

Joshua Ryan Smith 1

1United States Army Research Laboratory Adelphi USA

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5:15 AM - T5.10
Permanent NEA in Cs-Free AlGaN/GaN Photocathodes

Jonathan Marini 1 Puneet Suvarna 1 Jeff Leathersich 1 Isra Mahaboob 1 L. D. Bell 2 Shouleh Nikzad 2 John Hennessy 2 F. (Shadi) Shahedipour-Sandvik 1

1University at Albany, State University of New York Albany USA2California Institute of Technology Pasadena USA

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5:30 AM - T5.11
Device Designs for High Performance III-N Avalanche Photodiodes

Puneet Suvarna 1 Jeffrey M Leathersich 1 Jonathan Marini 1 F. (Shadi) Shahedipour-Sandvik 1 L. Douglas Bell 2 John Hennessy 2 Shouleh Nikzad 2

1State University of New York Albany USA2California Institute of Technology Pasadena USA

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5:45 AM - T5.12
Atomic-Layer Deposition for Improved Performance of III-N Avalanche Photodiodes

L. Douglas Bell 1 John Hennessy 1 Shouleh Nikzad 1 Puneet Suvarna 2 Jeffrey M. Leathersich 2 Jonathan Marini 2 F. (Shadi) Shahedipour-Sandvik 2

1California Institute of Technology Pasadena USA2University at Albany Albany USA

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T6: Poster Session II
Session Chairs
Tuesday PM, December 03, 2013
Hynes, Level 1, Hall B

9:00 AM - T6.01
Multiphonon Raman Scattering in He-Irradiated InGaN Alloys

Nuria Domenech-Amador 1 Ramon Cusco 1 Luis Artus 1 Eric Garcia Hemme 2 Rodrigo Garcia 2 German Gonzalez-Diaz 2 Jateen Gandhi 3 Abdelhak Bensaoula 3

1Inst. Jaume Almera (C.S.I.C.) Barcelona Spain2Dpto. Electricidad y Electronica, Univ. Complutense Madrid Spain3Department of Physics, Univ. of Houston Houston USA

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9:00 AM - T6.02
Deep-Level Characterization of Thick InGaN Films with Various In Contents for Photovoltaic Applications

Yoshitaka Nakano 1 Liwen Sang 2 Masatomo Sumiya 2

1Chubu University Kasugai Japan2National Institute for Materials Science Tsukuba Japan

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9:00 AM - T6.03
Electrical Characterization of p-i-n Junction Based on Thick i-InGaN Film for Photovoltaic Applications

Yoshitaka Nakano 1 Liwen Sang 2 Masatomo Sumiya 2 Fumio Hasegawa 1

1Chubu University Kasugai Japan2National Institute for Materials Science Tsukuba Japan

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9:00 AM - T6.04
RF-MBE Growth of AlN on a Sapphire Substrate Using an AlON Buffer Layer

Toshiki Makimoto 1 Kazuhide Kumakura 2 Michiya Maeda 1 Yuki Kobayashi 1 Hideki Yamamoto 2 Yoshiji Horikoshi 1 3

1Waseda University Tokyo Japan2NTT Corporation Kanagawa Japan3Waseda University Tokyo Japan

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9:00 AM - T6.05
Molecular Beam Epitaxy of Highly Mismatched GaN Alloys with GaAs, GaSb and GaBi

Sergei Novikov 1 K. M Yu 2 W. L Sarney 3 Z. Liliental-Weber 2 M. Ting 2 4 R. EL Powell 1 M. Shaw 5 A. J Kent 1 R. W Martin 5 S. P Svensson 3 W. Walukiewicz 2 C. T Foxon 1

1University of Nottingham Nottingham United Kingdom2Lawrence Berkeley National Laboratory Berkeley USA3US Army Research Laboratory Adelphi USA4University of California Berkeley USA5University of Strathclyde Glasgow United Kingdom

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9:00 AM - T6.06
AlN Heteroepitaxial Growth on Diamond (111) 2x1 Reconstructed Surface by Molecular Beam Epitaxy (MBE)

Tomohiro Hakamata 1 Wako Ono 1 Yuki Yokoyama 1 Daiki Utsunomiya 1 Yuji Seshimo 1 Atsushi Hiraiwa 1 Hiroshi Kawarada 1

1Waseda University Shinjuku-ku Japan

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9:00 AM - T6.08
Pseudomorphic Stabilization of Cubic AlxSc1-xN with High Al Concentration and Large Critical Thickness on (001) MgO Substrates with TiN as a Seed Layer

Bivas Saha 1 3 Sammy Saber 1 3 Gururaj Naik 2 3 Alexandra Boltasseva 2 3 Eric Stach 1 4 Eric Kvam 1 3 Timothy D. Sands 1 2 3

1Purdue University West Lafayette USA2Purdue University West Lafayette USA3Purdue University West Lafayette USA4Brookhaven National Laboratory Upton USA

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9:00 AM - T6.09
Structural and Morphological Study of CBE Grown (Al)GaNAs Alloys

Gitanjali Kolhatkar 1 Abderraouf Boucherif 1 Simon Fafard 2 Vincent Aimez 1 Richard Ares 1

1Universitamp;#233; de Sherbrooke Sherbrooke Canada2Cyrium Technologies Inc. Ottawa Canada

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9:00 AM - T6.10
Growth of hBN Using Metallic Boron: Isotopically Enriched h10BN for Neutron Detection

Tim Bruce Hoffman 1 James H Edgar 1 Jeffrey Geuther 2 George Tyrel 2 Tashfin Hossain 1 Kyle C. Snow 1 Benjamin Clubine 1 Yichao Zhang 1

1Kansas State University Manhattan USA2Kansas State University Manhattan USA

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9:00 AM - T6.14
Metal Work Function Dependence of Schottky Barrier Height by Internal Photoemission Measurements of Low-Mg-Doped p-GaN Schottky Contacts

Toshichika Aoki 1 Kenji Shiojima 1

1Univ. of Fukui Fukui Japan

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9:00 AM - T6.15
High Resistivity Isolation for AlGaN/GaN HEMT Using Al Double-Implantation

Andrzej Taube 1 2 Maciej Kozubal 1 Jakub Kaczmarski 1 Marcin Juchniewicz 1 Adam Barcz 1 3 Jan Dyczewski 3 Rafal Jakiela 3 Elzbieta Dynowska 1 3 Michal Adam Borysiewicz 1 Pawel Prystawko 4 5 Jakub Jasinski 2 Pawel Borowicz 1 6 Eliana Kaminska 1 Anna Piotrowska 1

1Institute of Electron Technology Warsaw Poland2Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Warsaw Poland3Institute of Physics, Polish Academy of Sciences Warsaw Poland4Institute of High Pressure Physics, Polish Academy of Sciences Warsaw Poland5TopGaN Ltd. Warsaw Poland6Institute of Physical Chemistry, Polish Academy of Sciences Warsaw Poland

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9:00 AM - T6.16
Effects of the Indium Profile on InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes

Patrick M. McBride 1 Qimin Yan 1 2 Chris G. Van de Walle 1

1University of California, Santa Barbara Santa Barbara USA2The Molecular Foundry, Lawrence Berkeley National Laboratory Berkeley USA

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9:00 AM - T6.17
The Effects of Grain Size on the Optical Properties on AlxGa1-xN/AlyGa1-yN MQW

Idris Ajia 1 P. R. Edwards 2 Z. Liu 3 R. W. Martin 2 J. Chang 3 I. S. Roqan 1

1KAUST Thuwal Saudi Arabia2University of Strathclyde Glasgow United Kingdom3Chinese Academy of Science Haidian District China

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9:00 AM - T6.18
InGaN Structure Influence on Efficiency Droop

Oleg I. Rabinovich 1

1NUST MISIS Moscow Russian Federation

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