Meetings & Events

 

2014 MRS Fall Meeting Logo2014 MRS Fall Meeting & Exhibit

November 30-December 5, 2014 | Boston
Meeting Chairs: Husam N. Alshareef, Amit Goyal, Gerardo Morell, José A. Varela, In Kyeong Yoo

Symposium T : Wide-Bandgap Materials for Solid-State Lighting and Power Electronics

2014-12-01   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Gaudenzio Meneghesso, University di Padova
Burak Ozpineci, Oak Ridge National Laboratory
Tetsuya Takeuchi, Meijo University

Symposium Support

AIXTRON SE
T2: GaN Power Devices II
Session Chairs
Isik Kizilyallil
Robert Kaplar
Monday PM, December 01, 2014
Hynes, Level 3, Room 300

2:30 AM - *T2.01
Materials for High-Speed, Low-Loss GaN Power Switch Transistor Technology

Andrea L Corrion 1 Keisuke Shinohara 1 Joel Wong 1 Zenon Carlos 1 David F Brown 1 Sameh Khalil 1 Florian Herrault 1 Alexandros Margomenos 1 John Robinson 1 Isaac Khalaf 1 Brian Hughes 1 Karim Boutros 1 Miroslav Micovic 1

1HRL Laboratories, LLC Malibu USA

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3:00 AM - *T2.02
Materials Issues for GaN-Based HEMTs for Power Electronics

James Speck 1

1University of California Santa Barbara USA

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3:30 AM - T2.03
Changes of Electronic Properties of AlGaN/GaN HEMTs by Surface Treatment

Wilfried Pletschen 1 Stefanie Linkohr 1 Lutz Kirste 1 Volker Cimalla 1 Stefan Mamp;#252;ller 1 Marcel Himmerlich 2 Stefan Krischok 2 Oliver Ambacher 1

1Fraunhofer-Institut of Applied Solid State Physics Freiburg Germany2University of Technology Ilmenau Germany

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3:45 AM -
Break

4:15 AM - *T2.04
GaN Bipolar Power Devices

Russell Dupuis 1 Yi-Che Lee 1 Tsung-Ting Kao 1 Jeomoh Kim 1 Mi-Hee Ji 1 Theeradetch Detchprohm 1 Shyh-Chiang Shen 1

1Georgia Institute of Technology Atlanta USA

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4:45 AM - *T2.05
Vertical GaN Electronic Devices on Bulk-GaN Substrates

David Bour 1 Isik Kizilyalli 1 Ozgur Aktas 1 Thomas Prunty 1 Hui Nie 1 Andrew Edwards 1 Gangfeng Ye 1 Brendan Kayes 1 Xiaobin Xin 1 Quentin Diduck 1 Brian Alvarez 1

1Avogy San Jose USA

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5:15 AM -
Discussion Time

5:30 AM - T2.07
Wrap around Field Plate for High Break-Down GaN Schottky Barrier Diode

Sowmya Kolli 1 Bruce Alphenaar 1 Robert Hickman 2 Prabhu Mushini 2 Mahendra Sunkara 1

1University of Louisville Louisville USA2Apiq Semiconductor LLC Louisville USA

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5:45 AM - T2.08
Temperature Dependent Electrical Characterization of Pt/n-GaN Metal-Semiconductor and Pt/HfO2/n-GaN Metal-Insulator-Semiconductor Schottky Diodes

Arjun Shetty 1 Basanta Roul 2 Shruti Mukundan 2 Greeshma Chandan 2 Lokesh Mohan 2 K J Vinoy 1 S B Krupanidhi 2

1Indian Institute of Science Bangalore India2Indian Institute of Science Bangalore India

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T1: GaN Power Devices I
Session Chairs
Matteo Meneghini
Martin Kuball
Monday AM, December 01, 2014
Hynes, Level 3, Room 300

9:30 AM - *T1.01
GaN Electronic Devices - Reliability and Thermal Challenges

Martin Kuball 1

1University of Bristol Bristol United Kingdom

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10:00 AM - T1.02
The Impact of Interfacial Layers on the Thermal Boundary Resistance and Residual Stress in GaN on Si Epitaxial Layers

Luke A Yate 1 Thomas Bougher 1 Thomas E Beechem 2 Baratunde Cola 1 Samuel Graham 1

1Georgia Institute of Technolog Atlanta USA2Sandia National Labs Albuquerque USA

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10:15 AM - T1.03
Impact of the GaN Buffer on Proton-Radiation Induced Threshold Voltage Shifts in AlGaN/GaN Heterostructures

Zeng Zhang 1 Drew Cardwell 1 A Sasikumar 1 A Arehart 1 Erin Kyle 2 E Zhang 3 D Fleetwood 3 Ronald Schrimpf 3 James speck 2 Steven Ringel 1

1The Ohio State University Columbus USA2University of California Santa Barbara Santa Barbara USA3Vanderbilt University Nashville USA

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10:30 AM - T1.04
Structural Evolution of Defects in AlGaN/GaN HEMTs under On-State and Off-State Stress Conditions

Andrew C Lang 1 Hessam Ghassemi 1 David J Meyer 2 Mitra L Taheri 1

1Drexel University Philadelphia USA2U.S. Naval Research Laboratory Washington USA

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10:45 AM - T1.05
GaN HEMT Drain-Lag Performance Dependence on GaN Channel Quality

Yoichi Kamada 1 Naoya Okamoto 1 Masaru Sato 1 Atsushi Yamada 1 Toshihiro Ohki 1 Shiro Ozaki 1 Kozo Makiyama 1 Keiji Watanabe 1 Kazukiyo Joshin 1

1Fujitsu Laboratories Ltd. Atsugi Japan

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11:00 AM -
Break

11:30 AM - *T1.06
MOCVD of GaN-Based HEMT Structures on 8 Inch Silicon Substrates

Oleg Laboutin 1 Chien-Fong Lo 1 Chen-Kai Kao 1 Kevin O'Connor 1 Daily Hill 1 Wayne Johnson 1

1IQE Taunton USA

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12:00 PM - *T1.07
Gallium Nitride: The Next-Si of Power Electronics

Tomas Palacios 1

1MIT Cambridge USA

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12:30 PM - T1.08
Stress Engineering Using AlN/GaN Superlattices for Epitaxy of GaN on 200 mm Si Wafers

Jie Su 1 Eric A Armour 1 Balakrishnan Krishnan 1 Soo Min Lee 1 George D Papasouliotis 1

1Veeco Instrument Inc Somerset USA

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12:45 PM - T1.09
Characterization of Al2O3/AlGaN/GaN HEMT Structure Using Capacitance-Voltage and In Situ XPS

Xiaoye Qin 1 Antonio Lucero 1 Angelica Azcatl 1 Jiyoung Kim 1 Robert M. Wallace 1

1University of Texas at Dallas Richardson USA

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2014-12-02   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Gaudenzio Meneghesso, University di Padova
Burak Ozpineci, Oak Ridge National Laboratory
Tetsuya Takeuchi, Meijo University

Symposium Support

AIXTRON SE
T4: LEDs for Solid-State Lighting I
Session Chairs
Yasufumi Fujiwara
Katsumi Kishino
Tuesday PM, December 02, 2014
Hynes, Level 3, Room 300

2:30 AM - *T4.01
InGaN-Based Visible Nanocolumn Photonic Crystal Emitters

Katsumi Kishino 1 2 Ai Yanagihara 1 Shunsuke Ishizawa 1

1Sophia University Tokyo Japan2Sophia Nanotechnology Research Center Tokyo Japan

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3:00 AM - *T4.02
InGaN-Based LEDs: Non-Radiative Losses and Degradation Mechanisms

Matteo Meneghini 1 Gaudenzio Meneghesso 1 Enrico Zanoni 1

1University of Padova Padova Italy

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3:30 AM - T4.03
Correlated XRD, Micro-PL and Atom Probe Tomography Analysis of Continuous and Discontinuous InGaN QWs

Xiaochen Ren 1 James R. Riley 1 Daniel D. Koleske 2 Lincoln J. Lauhon 1

1Northwestern University Evanston USA2Sandia National Laboratories Albuquerque USA

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3:45 AM - T4.04
Evaluation of Electron Overflow in Blue-LEDs with P-AlGaN Or P-GaN Electron Blocking Layer

Kento Hayashi 1 Toshiki Yasuda 1 Shota Katsuno 1 Tetsuya Takeuchi 1 Satoshi Kamiyama 1 Motoaki Iwaya 1 Isamu Akasaki 1

1Meijo Univ. Nagoya Japan

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4:00 AM -
Break

4:15 AM - *T4.05
Eu Site-Dependent Energy Transfer in Red Light Emitter of Eu-Doped GaN

Yasufumi Fujiwara 1 Ryuta Wakamatsu 1 Don-gun Lee 1 Brandon Mitchell 2 Atsushi Koizumi 1 Volkmar Dierolf 2

1Osaka University Osaka Japan2Lehigh University Bethlehem USA

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4:45 AM - T4.06
Low-Temperature Growth of Eu-Doped GaN by Organometallic Vapor Phase Epitaxy

Wanxin Zhu 2 Dolf Timmerman 2 Brandon Mitchell 1 Atsushi Koizumi 2 Yasufumi Fujiwara 2

1Lehigh University Bethlehem USA2Osaka University Suita Japan

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5:00 AM - T4.07
AlN Nanoparticles: Chemical Vapor Synthesis and Characterization

Stevan Mihajlo Ognjanovic 1 Markus Winterer 1

1University Duisburg-Essen Duisburg Germany

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5:15 AM - T4.08
Optimization of Carrier Distributions in Periodic Gain Structures towards Blue VCSELs

Kenjo Matsui 1 Kosuke Horikawa 1 Yugo Kozuka 1 Kazuki Ikeyama 1 Tetsuya Takeuchi 1 Satoshi Kamiyama 1 Motoaki Iwaya 1 Isamu Akasaki 1 2

1Meijo University Nagoya Japan2Akasaki Research Center Nagoya Japan

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5:30 AM - *T4.09
Growth and Optical Characterization of Fluorescent SiC for White LED Application

Satoshi Kamiyama 1

1Meijo University Nagoya Japan

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T5: Poster Session I
Session Chairs
Robert Kaplar
Tuesday PM, December 02, 2014
Hynes, Level 1, Hall B

9:00 AM - T5.01
Dense InGaN Nanopyramid Arrays Grown by Selective Area MOCVD on AlN/Si(111) Substrates with Intense Green Photoluminescence

Jian Wei Ho 1 2 4 Michael Heuken 3 5 Andrew A. O. Tay 6 Soo-Jin Chua 2 7 8

1National University of Singapore Singapore Singapore2Institute of Materials Research and Engineering, A*STAR Singapore Singapore3AIXTRON SE Herzogenrath Germany4National University of Singapore Singapore Singapore5RWTH Aachen University Aachen Germany6National University of Singapore Singapore Singapore7National University of Singapore Singapore Singapore8National University of Singapore Singapore Singapore

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9:00 AM - T5.02
AR-XPS Spectra and Band-Bending Properties of +c, -c and m-GaN Surfaces

Daiki Isono 1 Syuhei Fujioka 1 Yohei Sugiura 1 Takeyoshi Onuma 2 Tomohiro Yamaguchi 1 Tohru Honda 1

1Kogakuin University Tokyo Japan2TNCT Tokyo Japan

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9:00 AM - T5.03
Gate Junction Temperature Estimation in AlGaN/GaN-on-SiC HEMTs Using Raman Spectroscopy and Gate Resistance Thermometry

Georges Pavlidis 1 Samuel Graham 1

1Georgia Institute of Technology Atlanta USA

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9:00 AM - T5.04
Synthesis and Electrochemical Analysis of GaN Polycrystalline Films and Nanostructures on Silicon

Vijay Parameshwaran 1 Bruce Clemens 1

1Stanford University Stanford USA

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9:00 AM - T5.05
HVPE GaN with Low Concentration of Point Defects for Power Electronics

Michael A Reshchikov 1 Joy D McNamara 1 Alexander Usikov 2 3 Heikki Helava 2 Yuri Makarov 2

1Virginia Commonwealth University Richmond USA2Nitride Crystals, Inc. Deer Park USA3Saint-Petersburg National Research University of Information Technologies Saint Petersburg Russian Federation

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9:00 AM - T5.06
Direct Demonstration of Mode-Selective Phonon Excitation for 6H-SiC by a MIR Pulse Laser with Anti-Stokes Raman Scattering Spectroscopy

Kyohei Yoshida 2 Taro Sonobe 3 Heishun Zen 2 Kan Hachiya 1 Tomoya Murata 2 Takeshi Nogi 2 Yusuke Tsugamura 1 Motoharu Inukai 2 Sikharin Supakun 2 Hani Negm 2 Konstantin Torgasin 2 Toshiteru Kii 2 Kai Masuda 2 Hideaki Ohgaki 2

1Graduate School of Energy Science Kyoto Japan2Institute of Advanced Energy Uji Japan3Kyoto University Research Administration office Kyoto Japan

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9:00 AM - T5.07
A Facile Method for Reducing Threading Dislocation Density in GaN Epilayers via Vicinal Surfaces

Kwadwo Konadu Ansah-Antwi 1 2 Hongfei Liu 1 Chengguo Li 2 Jian Wei Ho 2 Ping Yang 3 Parviz Hajiyev 4 Lay Ting Ong 1 Ting Yu 4 Soo Jin Chua 2 1

1Institute of Materials Research and Engineering Singapore Singapore2National University of Singapore Singapore Singapore3National University of Singapore Singapore Singapore4National University of Singapore Singapore Singapore

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9:00 AM - T5.08
Au-Free Ohmic Contacts for AlGaN/GaN Heterostructure with a Thin GaN Cap

Sang-min Jung 1 2 Chul-jin Park 1 2 Chang-tack Lee 1 2 Moo-whan Shin 1 2

1Yonsei University Incheon Korea (the Republic of)2Yonsei University Incheon Korea (the Republic of)

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9:00 AM - T5.10
Study on the High Reflective Ag Ohmic Contact on High Carrier Concentration Si-Doped Al0.03Ga0.97N

Shunsuke Kawai 1 Daisuke Iida 1 Motoaki Iwaya 1 Tetsuya Takeuchi 1 Satoshi Kamiyama 1 Isamu Akasaki 1 2

1Meijo University Nagoya Japan2Akasaki Research Center Nagoya Japan

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9:00 AM - T5.11
Improved Surface Morphology of a Ti/Al/Ni/Au Ohmic Contact for AlGaN-GaN Heterostructure by Al2O3 Particles

Jin Hong Lim 1 Jeong Jin Kim 1 Jeon Wook Yang 1

1Chonbuk National University Jeonju Korea (the Republic of)

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9:00 AM - T5.12
GaN/SiC Epitaxy Growth for High Frequency and High Power Device Applications

Zheng Sun 1 Shigeyoshi Usami 1 Di Lu 1 Takahiro Ishii 1 Marc Olsson 1 Kouhei Yamashita 1 Tadashi Mitsunari 1 Yoshio Honda 1 Hiroshi Amano 1 2

1Nagoya University Nagoya Japan2Nagoya University Nagoya Japan

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