Meetings & Events

 

2014 MRS Fall Meeting Logo2014 MRS Fall Meeting & Exhibit

November 30-December 5, 2014 | Boston
Meeting Chairs: Husam N. Alshareef, Amit Goyal, Gerardo Morell, José A. Varela, In Kyeong Yoo

Symposium T : Wide-Bandgap Materials for Solid-State Lighting and Power Electronics

2014-12-01   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Gaudenzio Meneghesso, University di Padova
Burak Ozpineci, Oak Ridge National Laboratory
Tetsuya Takeuchi, Meijo University

Symposium Support

AIXTRON SE
T2: GaN Power Devices II
Session Chairs
Isik Kizilyallil
Robert Kaplar
Monday PM, December 01, 2014
Hynes, Level 3, Room 300

2:30 AM - *T2.01
Materials for High-Speed, Low-Loss GaN Power Switch Transistor Technology

Andrea L Corrion 1 Keisuke Shinohara 1 Joel Wong 1 Zenon Carlos 1 David F Brown 1 Sameh Khalil 1 Florian Herrault 1 Alexandros Margomenos 1 John Robinson 1 Isaac Khalaf 1 Brian Hughes 1 Karim Boutros 1 Miroslav Micovic 1

1HRL Laboratories, LLC Malibu USA

Show Abstract

3:00 AM - *T2.02
Materials Issues for GaN-Based HEMTs for Power Electronics

James Speck 1

1University of California Santa Barbara USA

Show Abstract

3:30 AM - T2.03
Changes of Electronic Properties of AlGaN/GaN HEMTs by Surface Treatment

Wilfried Pletschen 1 Stefanie Linkohr 1 Lutz Kirste 1 Volker Cimalla 1 Stefan Mamp;#252;ller 1 Marcel Himmerlich 2 Stefan Krischok 2 Oliver Ambacher 1

1Fraunhofer-Institut of Applied Solid State Physics Freiburg Germany2University of Technology Ilmenau Germany

Show Abstract

3:45 AM - T2
Break

4:15 AM - *T2.04
GaN Bipolar Power Devices

Russell Dupuis 1 Yi-Che Lee 1 Tsung-Ting Kao 1 Jeomoh Kim 1 Mi-Hee Ji 1 Theeradetch Detchprohm 1 Shyh-Chiang Shen 1

1Georgia Institute of Technology Atlanta USA

Show Abstract

4:45 AM - *T2.05
Vertical GaN Electronic Devices on Bulk-GaN Substrates

David Bour 1 Isik Kizilyalli 1 Ozgur Aktas 1 Thomas Prunty 1 Hui Nie 1 Andrew Edwards 1 Gangfeng Ye 1 Brendan Kayes 1 Xiaobin Xin 1 Quentin Diduck 1 Brian Alvarez 1

1Avogy San Jose USA

Show Abstract

5:15 AM - T2
Discussion Time

Show Abstract

5:30 AM - T2.07
Wrap around Field Plate for High Break-Down GaN Schottky Barrier Diode

Sowmya Kolli 1 Bruce Alphenaar 1 Robert Hickman 2 Prabhu Mushini 2 Mahendra Sunkara 1

1University of Louisville Louisville USA2Apiq Semiconductor LLC Louisville USA

Show Abstract

5:45 AM - T2.08
Temperature Dependent Electrical Characterization of Pt/n-GaN Metal-Semiconductor and Pt/HfO2/n-GaN Metal-Insulator-Semiconductor Schottky Diodes

Arjun Shetty 1 Basanta Roul 2 Shruti Mukundan 2 Greeshma Chandan 2 Lokesh Mohan 2 K J Vinoy 1 S B Krupanidhi 2

1Indian Institute of Science Bangalore India2Indian Institute of Science Bangalore India

Show Abstract

T1: GaN Power Devices I
Session Chairs
Matteo Meneghini
Martin Kuball
Monday AM, December 01, 2014
Hynes, Level 3, Room 300

9:30 AM - *T1.01
GaN Electronic Devices - Reliability and Thermal Challenges

Martin Kuball 1

1University of Bristol Bristol United Kingdom

Show Abstract

10:00 AM - T1.02
The Impact of Interfacial Layers on the Thermal Boundary Resistance and Residual Stress in GaN on Si Epitaxial Layers

Luke A Yate 1 Thomas Bougher 1 Thomas E Beechem 2 Baratunde Cola 1 Samuel Graham 1

1Georgia Institute of Technolog Atlanta USA2Sandia National Labs Albuquerque USA

Show Abstract

10:15 AM - T1.03
Impact of the GaN Buffer on Proton-Radiation Induced Threshold Voltage Shifts in AlGaN/GaN Heterostructures

Zeng Zhang 1 Drew Cardwell 1 A Sasikumar 1 A Arehart 1 Erin Kyle 2 E Zhang 3 D Fleetwood 3 Ronald Schrimpf 3 James speck 2 Steven Ringel 1

1The Ohio State University Columbus USA2University of California Santa Barbara Santa Barbara USA3Vanderbilt University Nashville USA

Show Abstract

10:30 AM - T1.04
Structural Evolution of Defects in AlGaN/GaN HEMTs under On-State and Off-State Stress Conditions

Andrew C Lang 1 Hessam Ghassemi 1 David J Meyer 2 Mitra L Taheri 1

1Drexel University Philadelphia USA2U.S. Naval Research Laboratory Washington USA

Show Abstract

10:45 AM - T1.05
GaN HEMT Drain-Lag Performance Dependence on GaN Channel Quality

Yoichi Kamada 1 Naoya Okamoto 1 Masaru Sato 1 Atsushi Yamada 1 Toshihiro Ohki 1 Shiro Ozaki 1 Kozo Makiyama 1 Keiji Watanabe 1 Kazukiyo Joshin 1

1Fujitsu Laboratories Ltd. Atsugi Japan

Show Abstract

11:00 AM - T1
Break

11:30 AM - *T1.06
MOCVD of GaN-Based HEMT Structures on 8 Inch Silicon Substrates

Oleg Laboutin 1 Chien-Fong Lo 1 Chen-Kai Kao 1 Kevin O'Connor 1 Daily Hill 1 Wayne Johnson 1

1IQE Taunton USA

Show Abstract

12:00 PM - *T1.07
Gallium Nitride: The Next-Si of Power Electronics

Tomas Palacios 1

1MIT Cambridge USA

Show Abstract

12:30 PM - T1.08
Stress Engineering Using AlN/GaN Superlattices for Epitaxy of GaN on 200 mm Si Wafers

Jie Su 1 Eric A Armour 1 Balakrishnan Krishnan 1 Soo Min Lee 1 George D Papasouliotis 1

1Veeco Instrument Inc Somerset USA

Show Abstract

12:45 PM - T1.09
Characterization of Al2O3/AlGaN/GaN HEMT Structure Using Capacitance-Voltage and In Situ XPS

Xiaoye Qin 1 Antonio Lucero 1 Angelica Azcatl 1 Jiyoung Kim 1 Robert M. Wallace 1

1University of Texas at Dallas Richardson USA

Show Abstract

2014-12-02   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Gaudenzio Meneghesso, University di Padova
Burak Ozpineci, Oak Ridge National Laboratory
Tetsuya Takeuchi, Meijo University

Symposium Support

AIXTRON SE
T4: LEDs for Solid-State Lighting I
Session Chairs
Yasufumi Fujiwara
Katsumi Kishino
Tuesday PM, December 02, 2014
Hynes, Level 3, Room 300

2:30 AM - *T4.01
InGaN-Based Visible Nanocolumn Photonic Crystal Emitters

Katsumi Kishino 1 2 Ai Yanagihara 1 Shunsuke Ishizawa 1

1Sophia University Tokyo Japan2Sophia Nanotechnology Research Center Tokyo Japan

Show Abstract

3:00 AM - *T4.02
InGaN-Based LEDs: Non-Radiative Losses and Degradation Mechanisms

Matteo Meneghini 1 Gaudenzio Meneghesso 1 Enrico Zanoni 1

1University of Padova Padova Italy

Show Abstract