Meetings & Events

Publishing Alliance

MRS publishes with Springer Nature

 

Corporate Partners

 

2015 MRS Fall Meeting Logo2015 MRS Fall Meeting & Exhibit

November 29-December 4, 2015 | Boston
Meeting Chairs: T. John Balk, Ram Devanathan, George G. Malliaras, Larry A. Nagahara, Luisa Torsi

Symposium RR : Wide-Bandgap Materials for Energy Efficiency---Power Electronics and Solid-State Lighting

2015-11-30   Show All Abstracts

Symposium Organizers

Madhu Chinthavali, Oak Ridge National Laboratory
Robert Kaplar, Sandia National Laboratories
Martin Kuball, University of Bristol
Tetsuya Takeuchi, Meijo University
RR2: GaN Power Devices II
Session Chairs
Debdeep Jena
Siddharth Rajan
Monday PM, November 30, 2015
Hynes, Level 3, Room 306

2:30 AM - *RR2.01
Near-Junction Microfluidic Cooling for Wide Bandgap Devices

Avram Bar-Cohen 1 J. Maurer 1 Abirami Sivananthan 1

1DARPA-MTO Arlington United States

Show Abstract

3:00 AM - *RR2.02
Power Switching Transistors Based on GaN and AlGaN Channels

Siddharth Rajan 1 Ting-Hsiang Hung 1 Saurabh Bajaj 1 Fatih Akyol 1 Sriram Krishnamoorthy 1

1The Ohio State University Columbus United States

Show Abstract

3:30 AM - RR2.03
Polarization and Two Dimensional Electron Gas Visualization in AlGaN/GaN Heterostructure

Kotaro Hirose 1 Norimichi Chinone 1 Yasunori Goto 2 Yasuo Cho 1

1Tohoku Univ Sendai Japan2Toyota Motor Corporation Toyota Japan

Show Abstract

3:45 AM - RR2
DISCUSSION TIME

Show Abstract

4:00 AM - RR2
Break

4:30 AM - *RR2.05
Oh Thatrsquo;s SiC, Yes We GaN!

Shashank Krishnamurthy 1

1United Technologies Research Center East Hartford United States

Show Abstract

5:00 AM - RR2.06
Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns

Yusuke Takei 1 Tomohiro Shimoda 1 Wataru Saito 2 Kuniyuki Kakushima 1 Hitoshi Wakabayashi 1 Kazuo Tsutsui 1 Hiroshi Iwai 1

1Tokyo Institute of Technology Yokohama-shi Japan2Toshiba Corporation Kawasaki-shi Japan

Show Abstract

5:15 AM - RR2.07
Study of Temperature Dependent Electrical Characteristics of Graphene/AlGaN/GaN Schottky Contacts

Rajendra Singh 1 Ashutosh Kumar 1 R. Khashid 2 Arindham Ghosh 2 Vikram Kumar 1

1IIT-Delhi New Delhi India2IISc Bangalore India

Show Abstract

5:30 AM - *RR2.08
Polarization-Engineered Wide-Bandgap Power Electronic Devices

Debdeep Jena 1 2

1Cornell University Ithaca United States2University of Notre Dame Notre Dame United States

Show Abstract

RR1: GaN Power Devices I
Session Chairs
Martin Kuball
Robert Kaplar
Avram Bar-Cohen
Monday AM, November 30, 2015
Hynes, Level 3, Room 306

9:30 AM - *RR1.01
GaN Power Devices for Vehicles

Tetsu Kachi 1

1Toyota Central Ramp;D Laboratories Aichi Japan

Show Abstract

10:00 AM - RR1.02
P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation

Shunsuke Kubota 1 Rei Kayanuma 1 Akira Nakajima 2 Shin-ichi Nishizawa 2 Hiromichi Ohashi 1 Kuniyuki Kakushima 1 Hitoshi Wakabayashi 1 Kazuo Tsutsui 1

1Tokyo Institute of Technology Yokohama-shi Japan2National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba-shi Japan

Show Abstract

10:15 AM - RR1.03
Performance Enhancement in AlGaN/GaN HEMT Characteristics with the Implementation of Dynamic Body Bias Technique

Isra Mahaboob 1 Jeffrey Leathersich 1 Jonathan Marini 1 John Bulmer 1 Neil Newman 1 Fatemeh Shahedipour-Sandvik 1

1SUNY Polytechnic Institute Albany United States

Show Abstract

10:30 AM - RR1.04
High-Resistance GaN-Based Buffer Layer Grown by the Polarization Doping Method

Lian Zhang 1 2 Yun Zhang 1 2 Xuecheng Wei 1 2 Ning Zhang 1 2 Junxi Wang 1 2 Jinmin Li 1 2

1Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences Beijing China2Institute of Semiconductors, Chinese Academy of Sciences Beijing China

Show Abstract

10:45 AM - RR1.05
Experimental Characterization of Inverse Piezoelectric Strain in GaN HEMTs

Kevin Robert Bagnall 1 Sameer Joglekar 1 Tomas Palacios 1 Evelyn Wang 1

1MIT Cambridge United States

Show Abstract

11:00 AM - RR1
Break

11:30 AM - *RR1.06
Dependencies of Dynamic On-State Resistance Increase in GaN Power Switching Transistors

Joachim Wurfl 1 Oliver Hilt 1 Eldad Bahat-Treidel 1 Nasser Badawi 2 Jan Boecker 2 Sibylle Dieckerhoff 2

1Ferdinand-Braun-Institut, Leibniz-Institut fuuml;r Houml;chstfrequenztechnik Berlin Germany2Technical University of Berlin Berlin Germany

Show Abstract

12:00 PM - RR1.07
Trapping Effect Analysis of AlGaN/InGaN/GaN Heterostructure by Conductance-Frequency Measurement

Apurba Chakraborty 2 Saptarsi Ghosh 1 Partha Mukhopadhyay 1 Syed Mukullika Dinara 1 Ankush Bag 1 Mihir Kumar Mahata 1 Rahul Kumar 1 Subhashis Das 1 Sanjay K Jana 1 Shubhankar Majumdar 1 Dhrubes Biswas 1 2

1IIT Kharagpur Kharagpur India2Indian Institute of Technology Kharagpur India

Show Abstract

12:15 PM - RR1.08
Role of Bulk Traps on Intermodulation Distortion of AlGaN/GaN HEMT

Ankush Bag 1 Partha Mukhopadhyay 1 Shubhankar Majumdar 1 Dhrubes Biswas 1

1Indian Institute of Technology Kharagpur Kharagpur India

Show Abstract

12:30 PM - RR1.09
Electrical Degradation Mechanism of GaN High Electron Mobility Transistors on Silicon and Sapphire under OFF-state Stress

Saptarsi Ghosh 1 Subhashis Das 1 Partha Mukhopadhyay 1 Ankush Bag 1 Shubhankar Majumdar 1 Dhrubes Biswas 1

1IIT Kharagpur Khargapur India

Show Abstract

12:45 PM - RR1.10
Spectroscopic Photo IV Analysis of Sub-Bandgap Defects in AlGaN/GaN HEMT Structures on Si Substrates

Burcu Ozden 1 Min P. Khanal 1 Vahid Mirkhani 1 Kosala Yapabandara 1 Suhyeon Youn 1 Sangjong Ko 1 Chungman Yang 1 Mobbassar Sk 2 Ayayi Claude Ahyi 1 Minseo Park 1

1Auburn Univ Auburn United States2Qatar University Doha Qatar

Show Abstract

2015-12-01   Show All Abstracts

Symposium Organizers

Madhu Chinthavali, Oak Ridge National Laboratory
Robert Kaplar, Sandia National Laboratories
Martin Kuball, University of Bristol
Tetsuya Takeuchi, Meijo University
RR4/DD8: Joint Session: Diamond and GaN High Power Devices
Session Chairs
Martin Kuball
Yasuo Koide
Tuesday PM, December 01, 2015
Hynes, Level 3, Room 306

2:30 AM - *RR4.01/DD8.01
GaN Cooling by Microwave Plasma Chemical Vapor Deposition Diamond

Daniel Francis 1 Daniel Twitchen 1 Firooz Faili 1

1Element Six Technologies Santa Clara United States

Show Abstract

3:00 AM - RR4.02/DD8.02
Seeking of the Best Diamond Schottky Diode Performance

David Eon 1 Aboulaye Traore 2 Etienne Gheeraert 1 Julien Pernot 1

1Univ. Grenoble Alpes/CNRS Grenoble France2AIST Tsukuba Japan

Show Abstract

3:15 AM - RR4.03/DD8.03
High Resolution Temperature Measurement of GaN HEMTs via Thermoreflectance Thermography

Banafsheh Barabadi 1 Kevin Robert Bagnall 1 Yuhao Zang 1 Tomas Palacios 1 Evelyn Wang 1

1Massachusetts Institute of Technology Cambridge United States

Show Abstract

3:30 AM - RR4.04/DD8.04
Investigation into the Efficiency and Stability of Surface-Transfer Doped Hydrogen-Terminated Diamond Using MoO3

Kevin George Crawford 1 Dongchen Qi 2 Alexandre Tallaire 3 Claudio Verona 4 Ernesto Limiti 4 David A.J. Moran 1

1The University of Glasgow Glasgow United Kingdom2Latrobe University Melbourne Australia3Universiteacute; Paris 13 Paris France4Universitagrave; di Roma Tor Vergata Rome Italy

Show Abstract

3:45 AM - RR4.05/DD8.05
Trench-Channel Vertical MOSFET Using C-H Diamond Surface

Toshiki Saito 1 Mikinori Kobayashi 1 Yuya Kitabayashi 1 Daisuke Matsumura 1 Masafumi Inaba 1 Atsushi Hiraiwa 1 2 Hiroshi Kawarada 1 2 3

1Waseda University Tokyo Japan2Institute of Nano-Science and Nano-Engineering, Waseda University Tokyo Japan3Kagami Memorial Laboratory for Material Science and Technology, Waseda University Tokyo Japan

Show Abstract

4:00 AM - RR4/DD8
Break

4:30 AM - *RR4.06/DD8.06
Schottky and Merged Schottky/PN-Junction Vertical Diamond Diodes for High Voltage and High Current

Timothy A. Grotjohn 1 2 Steven Zajac 1 Nutthamon Suwanmonka 1 Ayan Bhattacharya 1 Jes Asmussen 1 Timothy P. Hogan 1 Robert Rechenberg 2 Aaron Hardy 2 Michael Becker 2 Thomas Schuelke 2

1Michigan State Univ East Lansing United States2Fraunhofer Center for Coatings and Diamond Technologies East Lansing United States

Show Abstract

5:00 AM - RR4.07/DD8.07
High Current Density p-i-n Diode Enabled by Homoepitaxial Phosphorus Doped Diamond

Franz A. Koeck 1 Maitreya Dutta 2 Srabanti Chowdhury 2 Robert J. Nemanich 1

1Arizona State University Tempe United States2Arizona State University Tempe United States

Show Abstract

5:15 AM - *RR4.08/DD8.08
GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz

Pane C Chao 1

1BAE Systems Nashua United States

Show Abstract

5:45 AM - RR4.09/DD8.09
C-H Diamond MOSFETs with 1.7 kV Breakdown Voltage and >190mA/mm Current Density

Yuya Kitabayashi 1 Tetsuya Yamada 1 Dechen Xu 1 Toshiki Saito 1 Daisuke Matsumura 1 Atsushi Hiraiwa 2 Hiroshi Kawarada 1 2 3

1Faculty of Science and Engineering, Waseda University Tokyo Japan2Institute of Nano-Science and Nano-Engineering, Waseda University Tokyo Japan3Kagami Memorial Laboratory for Material Science and Technology, Waseda University Tokyo Japan

Show Abstract

RR3: Oxide Semiconductors
Session Chairs
Robert Kaplar
Daniel Francis
Tuesday AM, December 01, 2015
Hynes, Level 3, Room 306

9:45 AM - RR3.01
Homoepitaxial Growth of Si-Doped Thick (001) beta;-Ga2O3 Layers by Halide Vapor Phase Epitaxy

Hisashi Murakami 1 Kazushiro Nomura 1 Ken Goto 1 2 Kohei Sasaki 2 3 Quang Tu Thieu 1 Rie Togashi 1 Yoshinao Kumagai 1 Keita Konishi 3 Masataka Higashiwaki 3 Akito Kuramata 2 Shigenobu Yamakoshi 2 Bo A. Monemar 1 4 Akinori Koukitu 1

1Tokyo University of Agriculture and Technology Koganei, Tokyo Japan2Tamura Corporation Sayama Japan3National Institute of Information and Communications Technology Koganei Japan4Linkouml;ping University Linkouml;ping Sweden

Show Abstract

10:00 AM - RR3.02
Solid-Phase Epitaxial Crystallization of Ga2O3 Thin Films by Pulsed KrF Excimer Laser Annealing towards Low-Temperature Device Fabrication

Daishi Shiojiri 1 Daiji Fukuda 1 Nobuo Tsuchimine 2 Koji Koyama 3 Satoru Kaneko 4 1 Akifumi Matsuda 1 Mamoru Yoshimoto 1

1Tokyo Inst. of Tech. Yokohama-shi Japan2TOSHIMA Manufacturing Co., Ltd. Higashimatsuyama-shi Japan3Namiki Precision Jewel Co., Ltd. Adachi-ku Japan4Kanagawa Ind. Tech. Center Ebina-shi Japan

Show Abstract

10:15 AM - RR3.03
Tin Doped Gallium Oxide Wide Band Gap Semiconductors

Lauren Garten 1 Kipil Lim 2 Laura Theresa Schelhas 2 Michael F. Toney 2 Sin Cheng Siah 3 Riley E Brandt 3 Tonio Buonassisi 3 Paul F. Ndione 1 Andriy Zakutayev 1 David S. Ginley 1

1National Renewable Energy Laboratory Golden United States2SLAC National Accelerator Laboratory Menlo United States3Massachusetts Institute of Technology Cambridge United States

Show Abstract