Meetings & Events

 

2015 MRS Fall Meeting Logo2015 MRS Fall Meeting & Exhibit

November 29-December 4, 2015 | Boston
Meeting Chairs: T. John Balk, Ram Devanathan, George G. Malliaras, Larry A. Nagahara, Luisa Torsi

Symposium RR : Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting

2015-11-30   Show All Abstracts

Symposium Organizers

Madhu Chinthavali, Oak Ridge National Laboratory
Robert Kaplar, Sandia National Laboratories
Martin Kuball, University of Bristol
Tetsuya Takeuchi, Meijo University
RR2: GaN Power Devices II
Session Chairs
Debdeep Jena
Siddharth Rajan
Monday PM, November 30, 2015
Hynes, Level 3, Room 306

2:30 AM - *RR2.01
Near-Junction Microfluidic Cooling for Wide Bandgap Devices

Avram Bar-Cohen 1 J. Maurer 1 Abirami Sivananthan 1

1DARPA-MTO Arlington United States

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3:00 AM - *RR2.02
Power Switching Transistors Based on GaN and AlGaN Channels

Siddharth Rajan 1 Ting-Hsiang Hung 1 Saurabh Bajaj 1 Fatih Akyol 1 Sriram Krishnamoorthy 1

1The Ohio State University Columbus United States

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3:30 AM - RR2.03
Polarization and Two Dimensional Electron Gas Visualization in AlGaN/GaN Heterostructure

Kotaro Hirose 1 Norimichi Chinone 1 Yasunori Goto 2 Yasuo Cho 1

1Tohoku Univ Sendai Japan2Toyota Motor Corporation Toyota Japan

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3:45 AM -
DISCUSSION TIME

4:00 AM -
Break

4:30 AM - *RR2.05
Oh Thatrsquo;s SiC, Yes We GaN!

Shashank Krishnamurthy 1

1United Technologies Research Center East Hartford United States

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5:00 AM - RR2.06
Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns

Yusuke Takei 1 Tomohiro Shimoda 1 Wataru Saito 2 Kuniyuki Kakushima 1 Hitoshi Wakabayashi 1 Kazuo Tsutsui 1 Hiroshi Iwai 1

1Tokyo Institute of Technology Yokohama-shi Japan2Toshiba Corporation Kawasaki-shi Japan

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5:15 AM - RR2.07
Study of Temperature Dependent Electrical Characteristics of Graphene/AlGaN/GaN Schottky Contacts

Rajendra Singh 1 Ashutosh Kumar 1 R. Khashid 2 Arindham Ghosh 2 Vikram Kumar 1

1IIT-Delhi New Delhi India2IISc Bangalore India

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5:30 AM - *RR2.08
Polarization-Engineered Wide-Bandgap Power Electronic Devices

Debdeep Jena 1 2

1Cornell University Ithaca United States2University of Notre Dame Notre Dame United States

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RR1: GaN Power Devices I
Session Chairs
Martin Kuball
Robert Kaplar
Avram Bar-Cohen
Monday AM, November 30, 2015
Hynes, Level 3, Room 306

9:30 AM - *RR1.01
GaN Power Devices for Vehicles

Tetsu Kachi 1

1Toyota Central Ramp;D Laboratories Aichi Japan

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10:00 AM - RR1.02
P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation

Shunsuke Kubota 1 Rei Kayanuma 1 Akira Nakajima 2 Shin-ichi Nishizawa 2 Hiromichi Ohashi 1 Kuniyuki Kakushima 1 Hitoshi Wakabayashi 1 Kazuo Tsutsui 1

1Tokyo Institute of Technology Yokohama-shi Japan2National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba-shi Japan

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10:15 AM - RR1.03
Performance Enhancement in AlGaN/GaN HEMT Characteristics with the Implementation of Dynamic Body Bias Technique

Isra Mahaboob 1 Jeffrey Leathersich 1 Jonathan Marini 1 John Bulmer 1 Neil Newman 1 Fatemeh Shahedipour-Sandvik 1

1SUNY Polytechnic Institute Albany United States

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10:30 AM - RR1.04
High-Resistance GaN-Based Buffer Layer Grown by the Polarization Doping Method

Lian Zhang 1 2 Yun Zhang 1 2 Xuecheng Wei 1 2 Ning Zhang 1 2 Junxi Wang 1 2 Jinmin Li 1 2

1Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences Beijing China2Institute of Semiconductors, Chinese Academy of Sciences Beijing China

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10:45 AM - RR1.05
Experimental Characterization of Inverse Piezoelectric Strain in GaN HEMTs

Kevin Robert Bagnall 1 Sameer Joglekar 1 Tomas Palacios 1 Evelyn Wang 1

1MIT Cambridge United States

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