Meetings & Events

2012 MRS Spring Meeting Logo

2012 MRS Spring Meeting & Exhibit

April 9-13, 2012 | San Francisco
Meeting Chairs: Lara A. Estroff, Jun Liu, Kornelius Nielsch, Kazumi Wada

Symposium C : Interconnect Challenges for CMOS Technology-Materials, Processes, and Reliability for Downscaling, Packaging, and 3D Stacking

2012-04-10   Show All Abstracts

Symposium Organizers

Geraud Dubois, IBM Almaden Research Center
Francesca Iacopi, Griffith University
Atsuko Sekiguchi, National Institute of Advanced Industrial Science and Technology
Sean W. King, Intel Corporation
Christian Dussarat, Air Liquide Delaware Research and Technology Center

Symposium Support

Air Liquide
Air Products
Applied Materials, Inc.
IBM Almaden Research Center
Intel Corporation
TEL Technology Center, America, LLC

C2: Low-k II
Session Chairs
Willi Volksen
Tuesday PM, April 10, 2012
Moscone West, Level 2, Room 2003

2:30 AM - *C2.1
Plasmas Processes Challenges for Porous SiCOH Integration in Advanced Interconnects

Thierry Chevolleau 1 Maxime Darnon 1 Nicolas Posseme 2 Thibaut David 2 Regis Bouyssou 3 Fanny Bailly 3 Julien Ducote 3 Christophe Licitra 2 Christophe Verove 3 Olivier Joubert 1

1LTM - CNRS Grenoble France2CEA-Leti Minatec Grenoble France3STMicroelectronics Crolles France

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3:00 AM - C2.2
Damage Imaging of Low-k Materials in Cu Interconnect by Helium Ion Microscopy

Shinichi Ogawa 1 Tomohiko Iijima 1

1AIST Tsukuba-city, Ibarki-ken Japan

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3:15 AM - C2.3
Development of Effective Repair Chemistries for Restoration of Damaged Low-k Films

Curtis Anderson 1 Francois Doniat 1 James McAndrew 1 Christian Dussarrat 1

1Air Liquide Newark USA

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3:30 AM - C2.4
Application of Downstream Hydrogen Plasma for Photoresist Strip with Minimal Damage to and Losses of Materials Involved in Advanced-Device Fabrication

Bayu Atmaja Thedjoisworo 1 Davoud Zamani 2 David Cheung 1

1Novellus Systems San Jose USA2University of Arizona Tuscon Tuscon USA

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3:45 AM - C2.5
Etch Challenges of a Spin-on Trilayer Resist System for Narrow Pitch Dual Damascene Patterning

Frederic Lazzarino 1 Christopher Wilson 1 Vincent Truffert 1 Bart Vereecke 1 Steven Demuynck 1 Jean-Francois de Marneffe 1 Mikhail R Baklanov 1

1imec vzw Leuven Belgium

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4:00 AM -
BREAK

4:30 AM - C2.6
A New Class of ULK for Advanced Interconnects

Yusuke Matsuda 1 Geraud Dubois 2 Jitendra Rathore 2 Leonard Interrante 3 Reinhold Dauskardt 1

1Stanford University Stanford USA2IBM San Jose USA3Rensselaer Polytechnic Institute Troy USA

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4:45 AM - C2.7
Evaluation of New Ultra Low-k Material with Exceptionally Good Chemical Stability

Mikhail B Krishtab 1 2 Toan Q Le 2 Kris Vanstreels 2 Liping Zhang 2 Mikhail R Baklanov 2 Mark Phillips 3

1Saint Petersburg Electrotechnical University St. Petersburg Russian Federation2imec Leuven Belgium3SBA Materials, Inc. Albuquerque USA

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5:00 AM - C2.8
Effect of Silane Alkylation on Mechanical Performance and Etch Resistance in Spin-on Ultralow-kappa; (1.8-2.4) SiOCH Films

Mark L.F. Phillips 1 Travis J Savage 1

1SBA Materials, Inc. Albuquerque USA

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5:15 AM - C2.9
Study of Ion and VUV Effects on Self-assembled Organic Low-k Material Exposed to Argon Plasma

Jean-Francois de Marneffe 1 Rami Ljazouli 2 Laurent Souriau 1 Liping Zhang 1 Hsiang-Yun Lee 3 Christopher C Wilson 1 Mikhail R Baklanov 1

1imec vzw Leuven Belgium2Polytech'Orleans Orleans France3Stanford University Stanford USA

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C1: Low-k I
Session Chairs
Geraud Dubois
Tuesday AM, April 10, 2012
Moscone West, Level 2, Room 2003

9:00 AM -
Organizers Introduction

9:15 AM - *C1.1
Post Porosity Plasma Protection: A New Platform to Minimize Process Damage of Highly Porous Dielectric Materials

Willi Volksen 1 Theo Frot 1 Teddie Magbitang 1 Sampath Purushothaman 2 Robert L Bruce 2 Geraud Dubois 1

1IBM Almaden Research Center San Jose USA2IBM T.J. Watson Research Center Yorktown Heights USA

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9:45 AM - C1.2
Pore Sealing to Enable Integration of Porous Low-k Inter Layer Dielectrics with ALD Metals

Rohan Akolkar 1 Jeff Bielefeld 1 James Clarke 1 Tejaswi Indukuri 1 Christopher Jezewski 1 John Plombon 1 Jeanette Roberts 1

1Intel Corporation Hillsboro USA

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10:00 AM - C1.3
Pore Sealing of High Porosity Mesoporous Silica Films by Self-assembled Carbon-bridged Organosilicas

Isabel Van Driessche 1 Frederik Goethals 1 Mikhail R Baklanov 2 Pascal Van Der Voort 1

1Ghent University Ghent Belgium2IMEC Leuven Belgium

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10:15 AM - C1.4
Pore Seal Property of Ultra-thin Layer for Porous Low-k Films Using Ellipsometric Porosimetry

Shoko Sugiyama Ono 1 Yasuhisa Kayaba 1 Tsuneji Suzuki 1 Hirofumi Tanaka 1 Kazuo Kohmura 1

1Mitsui Chemicals, Inc. Sodegaura, Chiba Japan

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10:30 AM - C1.5
Pore Sealing of SiOCH Ultra Low-k Dielectric with Polyimide Langmuir-Blodgett Film

Svetlana I Goloudina 1 Alexey S Ivanov 1 Mikhail B Krishtab 1 2 Victor V Luhinin 1 Vyacheslav M Pasyuta 1 Mikhail R Baklanov 2

1Saint Petersburg Electrotechnical University St. Petersburg Russian Federation2imec Leuven Belgium

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10:45 AM - C1.6
Post Porosity Plasma Protection II: An Alternative Integration Approach for Microporous Ultra Low k Materials

Teddie Magbitang 1 Theo Frot 1 Robert L Bruce 2 Sampath Purushothaman 2 Willi Volksen 1 Geraud Dubois 1

1IBM Almaden Research Center San Jose USA2IBM TJ Watson Research Center Yorktown Heights USA

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11:00 AM -
BREAK

11:30 AM - *C1.7
Extending PECVD Based Porous Ultra-Low-k Dielectrics for Sub-22nm Generation

Dimitri Kioussis 1 Todd Ryan 3 Steve M Gates 5 Alfred Grill 5 Anita Madan 2 Nancy Klymko 2 Christopher Parks 2 Steve Molis 2 Leo Tai 2 Elbert Huang 5 Larry Clevenger 2 Hideaki Masuda 7 Ben Kim 8 Byunghee Kim 9 Shao Beng Law 1 Darryl Restaino 2 Zhiguo Sun 1 Youbo Lin 1 Shobha Hosadurga 4 Steven A Cohen 5 Janine Protzman 2 Kumar Virwani 6

1GLOBALFOUNDRIES Hopewell Junction USA2IBM, Semiconductor Research and Development Center Hopewell Junction USA3GLOBALFOUNDRIES, at Albany Nanotech Albany USA4IBM, at Albany Nanotech Albany USA5IBM T.J. Watson Research Center Yorktown Heights USA6IBM Almaden Research Center San Jose USA7Toshiba Electronic Components America Hopewell Junction USA8STMicroelectronics Hopewell Junction USA9Samsung Electronics Corporation Hopewell Junction USA

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12:00 PM - C1.8
Nanoporous SiCOH/CxHy Dual Phase Films with Ultralow Dielectric Constant and High Youngrsquo;s Modulus

Jong-Min Park 1 Byung-Seon Kong 2 Hee-Tae Jung 1

1KAIST Daejeon Republic of Korea2KCC Central Research Institute Yongin Republic of Korea

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12:15 PM - C1.9
Novel Ultralow-k Interconnect Dielectric Fabricated with Single Precursor

Son Nguyen 2 Hosadurga Shobha 2 Stephan Cohen 1 Anita Madan 3 Eduard Adams 4 Kumar Virwani 5 Donald Canaperi 2 Todd Ryan 6 Alfred Grill 1

1IBM T.J.Watson Res.Ctr. Yorktown Heights USA2IBM at Albany Nanotech Albany USA3IBM STG Hopewell Junction USA4IBM STG Essex Junction USA5IBM Almaden Res.Ctr. San Jose USA6GLOBALFOUNDRIES Albany USA

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12:30 PM - C1.10
Understanding the Impact of Porosity and Pore Structure in Ultra Low Dielectric Constant Organosilicate Glasses

Jennifer E Al-Rashid 1 Raymond N Vrtis 1 Irene J Hsu 1 Anupama Mallikarjunan 1 Kathleen E Theodorou 1 John M Zielinski 2

1Air Products and Chemicals, Inc. Allentown USA2Intertek Analytical Sciences Americas Allentown USA

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12:45 PM - C1.11
Development of a Suite of Computational Models for the Design of Ultralow-k SiCOH-based Materials

Alexandra Cooper 1 Paulette Clancy 1

1Cornell University Ithaca USA

Show Abstract

2012-04-11   Show All Abstracts

Symposium Organizers

Geraud Dubois, IBM Almaden Research Center
Francesca Iacopi, Griffith University
Atsuko Sekiguchi, National Institute of Advanced Industrial Science and Technology
Sean W. King, Intel Corporation
Christian Dussarat, Air Liquide Delaware Research and Technology Center

Symposium Support

Air Liquide
Air Products
Applied Materials, Inc.
IBM Almaden Research Center
Intel Corporation
TEL Technology Center, America, LLC

C5: Metallization II (Copper Seed and Characterization)
Session Chairs
Christian Dussarat
Wednesday PM, April 11, 2012
Moscone West, Level 2, Room 2003

2:30 AM - *C5.1
Approaches to Copper Electrodeposition for the 2x nm Node and Beyond

George Andrew Antonelli 1 Huanfeng Zhu 1 Jon Reid 1

1Novellus Systems, Inc. Tualatin USA

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3:00 AM - C5.2
Evaluation of Wet Cu Seed Deposition to Enable Downscaling Damascene Metallization

Silvia Armini 1 Johan Swerts 1 Yong Kong Siew 1 Zaid El-Mekki 1 Leonardus Leunissen 1

1IMEC Leuven Belgium

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3:15 AM - C5.3
Plasma Etching of Copper Thin Film over a Dielectric Step and Electromigration Failure Mechanism

Yue Kuo 1 Chi-Chou Lin 1

1Texas Aamp;M University College Station USA

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3:30 AM - C5.4
Stress Effects in Cu Interconnects for RF Technology

Jeff Gambino 1 Edward Cooney 1 Felix Anderson 1 John He 1 Cyril Cabral 2

1IBM Microelectronics Essex Junction USA2IBM Research Yorktown Heights USA

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3:45 AM - C5.5
RF Characteristics of Copper Vias

Anshul Ashok Vyas 1 Francisco Madriz 1 Patrick Wilhite 1 Toshishige Yamada 1 Cary Y Yang 1

1Santa Clara University Santa Clara USA

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4:00 AM -
BREAK

C6: Metallization III (Copper Reliability and CMP)
Session Chairs
Sean King
Wednesday PM, April 11, 2012
Moscone West, Level 2, Room 2003

4:30 AM - *C6.1
Stress and Reliability in Cu Interconnects

Paul Besser 1 Conal Murray 2

1GLOBALFOUNDRIES Sunnyvale USA2IBM Yorktown Heights USA

Show Abstract

5:00 AM - C6.2
Simulating SEM Images of Crystalline Copper with Amorphous Top Layer: The Modeling and Verification

Satoshi Takada 1 2 Makoto Suzuki 2 Sergey Borisov 3 Eric Eisenbraun 1

1State University of New York Albany USA2Hitachi High-Technologies Corporation Hitachinaka Japan3Abeam Technologies Castro Valley USA

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5:15 AM - C6.3
Cu CMP and Its Challenge for 20nm Nodes and Beyond

John Zhang 1 Wei-Tsu Tseng 2 Economikos Laertis 2 Qiang Fang 3 Jianping Zheng 3 Lin Yang 2 Donald F Canaperi 4 Michael Lofaro 5 Ben Kim 1 Chao-Kun Hu 5 Eric Liniger 5 Richard Murphy 2 Tsong Lin L Tai 2 Naftali Lustig 2 Walter Kleemier 1 Cindy Goldberg 1 Jennifer Muncy 2 Griselda Bonilla 5 Xiaomeng Chen 2 Ron Sampson 1

1STMicroelectronics Hopewell Junction USA2IBM Semiconductor Research and Development Center (SRDC) Hopewell Junction USA3GLOBALFOUNDRIES Hopewell Junction USA4IBM at Albany Nanotech Albany USA5IBM Research Center Yorktown Heights USA

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5:30 AM - C6.4
Pad Roughness Effects by Diamond Conditioner on the Step Height Reduction in CMP Processes

Jae-Young Bae 1 Jihoon Seo 1 Kwangseob Yoon 2 Jinok Moon 1 3 Ungyu Paik 1 2

1Hanyang University Seoul Republic of Korea2Hanyang University Seoul Republic of Korea3Samsung Electronics Gyeonggi-Do Republic of Korea

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5:45 AM - C6.5
A Model of Chemical Mechanical Planarization to Predict Impact of Pad Conditioning on Process Performance

G. Bahar Basim 1 Serkan Kincal 2

1Ozyegin University Istanbul Turkey2Middle East Technical University Ankara Turkey

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C7: Poster Session
Session Chairs
Sean King
Wednesday PM, April 11, 2012
Marriott, Yerba Buena, Salons 8-9

9:00 AM - C7.1
A Novel Polymer Technology for Underfill

Toshiyuki Sato 1 Osamu Suzuki 1 Paul Czubarow 2 David Son 3

1NAMICS Corporation Niigata Japan2eM-TECH, Inc. Wellesley USA3Southern Methodist University Dallas USA

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9:00 AM - C7.10
Characterization of Nanotwinned Cu Films Prepared by Pulsed Electrodeposition at Low Temperature

Che-Yi Lin 1 Tsung-Cheng Chan 1 Chien-Neng Liao 1

1National Tsing Hua University Hsinchu Taiwan

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9:00 AM - C7.11
Surface Cleaning for Enhanced Adhesion to Packaging Surfaces: Plasma and Free Radical Chemistries

Sneha Sen Gaddam 1 Haseeb Kazi 2 Jeff Kelber 3

1University of North Texas Denton USA2University of North Texas Denton USA3University of North Texas Denton USA

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9:00 AM - C7.12
Plasma Cleaning of Ru for Cu Interconnect Adhesion

Xin Liu 1 Chiyu Zhu 1 Tianyin Sun 1 Sean W King 2 Robert J Nemanich 1

1Arizona State Unversity Tempe USA2Intel Corporation Hillsboro USA

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9:00 AM - C7.13
New Concentration Dependence of Pressure in Nanopores: Diffusion Mechanism of Impulse Transfer in Nanoscaled Systems

Valeriy Efimovich Arkhincheev 1 Mikhail R Baklanov 2 Bair Z Darmaev 1

1Institute of Physical Materials Science Ulan-Ude Russian Federation2IIMEC Leuven Belgium

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9:00 AM - C7.2
Hydrofluoric-acid-resistant Spin-on Dielectrics by Sol-gel Process

Takahisa Yamazaki 1 Masaaki Hirakawa 1 Hirohiko Murakami 1

1Ulvac, Inc. Tsukuba Japan

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9:00 AM - C7.3
Simulation of Electromigration Effects on Voids in Monocrystalline Ag Films

Andreas Latz 1 Dietrich E Wolf 1

1University Duisburg-Essen Duisburg Germany

Show Abstract

9:00 AM - C7.4
Etch Process Optimization and Electrical Improvement in TiN Hard Mask Ultra-low k Interconnection

Chih-Yang Chang 1 Sean Kang 1 Chia-ling Kao 1 Bhargav S Citla 1 Nikos Bekiaris 1 Yongmei Chen 1 Bryan Pu 1 Throsten Lill 1

1Applied Materials, Inc Sunnyvale USA

Show Abstract

9:00 AM - C7.5
Characteristics of Nickel Thin Film Deposited by Plasma Enhanced ALD Using Ni(EtCp)2

Jingyu Park 2 Taeyong Park 1 Jaesang Lee 2 Heeyoung Jeon 2 Hyeongtag Jeon 1

1Hanyang University Seoul Republic of Korea2Hanyang Universtiy Seoul Republic of Korea

Show Abstract

9:00 AM - C7.8
Advanced Slurry Formulations for New Generation Chemical Mechanical Planarization (CMP) Applications

G. Bahar Basim 1 Ayse Karagoz 1 Brij M. Moudgil 2

1Ozyegin University Istanbul Turkey2University of Florida Gainesville USA

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9:00 AM - C7.9
Electromigration in Ag Nanowires with a Single Grain Boundary Structured by Focused Ion Beam

Simon Sindermann 1 Guenter Dumpich 1 Frank-J. Meyer zu Heringdorf 1

1University Duisburg-Essen D-47057 Duisburg Germany

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C3: Reliability (Low-k)
Session Chairs
Geraud Dubois
Wednesday AM, April 11, 2012
Moscone West, Level 2, Room 2003

9:15 AM - *C3.1
Leakage and Dielectric Breakdown in Low K Dielectrics

T. M Shaw 1 E. G Liniger 1 C. J Penny 2 E. Huang 1 J. M Atkin 3 R. B Laibowitz 3 G. Bonilla 1

1IBM Yorktown Heights USA2Albany Nano Technology Research Center Albany USA3Columbia University New York USA

Show Abstract

9:45 AM - C3.2
Determination of the Low-k Dielectric/Cu Band Diagram for a Fundamental Understanding of Interconnect Leakage Mechanisms

Sean King 1 Marc French 1 Milt Jaehnig 1 Markus Kuhn 1 Benjamin French 1

1Intel Corporation Hillsboro USA

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10:00 AM - C3.3
Magnetic Resonance Studies of Back End of Line Dielectrics

Brad Bittel 1 Thomas Pomorski 1 Patrick Lenahan 1 Sean King 2

1Penn State University Park USA2Intel Corp. Hillsboro USA

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10:15 AM - C3.4
Nano-porosity Limitations for Dielectric Constant Scaling of Low-k a-SiC(N):H Diffusion Barriers and SiOC:H Inter Layer Dielectrics

Ebony Mays 1 Jeff Bielefeld 1 Danya Jacob 1 Brent Colvin 1 David Vanleuven 1 Sean King 1 Ming Liu 2 David Gidley 2

1Intel Corporation Hillsboro USA2University of Michigan Ann Arbor USA

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10:30 AM - C3.5
Using Scratch Testing to Further Evaluate the Mechanical Integrity of a New Class of Low- kappa; Thin Films

Bryan Crawford 2 Sukesh Mahajan 1

1SBA Materials, Inc. Albuquerque USA2Nanomechanics, Inc. Oak Ridge USA

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10:45 AM - C3.6
Development of Composite Porous Thin Films with Tunable Properties

Theo Frot 1 Willi Volksen 1 Teddie Magbitang 1 Geraud Dubois 1 Anita Madan 2 Janine L Protzman 2

1IBM San Jose USA2IBM Hopewell Junction USA

Show Abstract

11:00 AM -
BREAK

C4: Metallization I (Barrier)
Session Chairs
Christian Dussarat
Wednesday AM, April 11, 2012
Moscone West, Level 2, Room 2003

11:30 AM - *C4.1
CVD of Self-Aligned Manganese Capping Layers and Diffusion Barriers, Void-free Filling of Narrow Vias with Copper, and Highly Conformal Copper-Manganese Seed Layers for through-Silicon Vias

Roy Gordon 1 Yeung Au 1 QingMin Wang 2 Huazhi Li 2 Sebastien Lehn 2 Deo V Shenai 2

1Harvard University Cambridge USA2The Dow Chemical Company North Andover USA

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12:00 PM - C4.2
Study of Deposition Behavior of Thermal/Plasma-Enhanced Chemical Vapor Deposition (CVD/PECVD) of Manganese on Porous SiCOH Low-k Dielectric Materials for Copper Diffusion Barrier Application in Advanced Interconnect Technology

Nicolas Jourdan 1 Mikhail R Baklanov 1 Johan Meersschaut 1 Guy Vereecke 1 Thierry Conard 1 Christopher J Wilson 1 James M Ablett 2 Emiliano Fonda 2 Jef Geypen 1 Yong Kong Siew 1 Sven Van Elshocht 1 Zsolt Tokei 1

1imec Leuven Belgium2Synchrotron Soleil Gif-sur Yvette France

Show Abstract

12:15 PM - C4.3
Low Resistive Co(W) Film by Atomic Layer Deposition as Cu Barrier/Liner for Future ULSIs

Hideharu Shimizu 1 2 Kohei Shima 1 Kaoru Sakoda 2 Takeshi Momose 1 Yukihiro Shimogaki 1

1The University of Tokyo Tokyo Japan2Taiyo Nippon Sanso Tsukuba Japan

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12:30 PM - C4.4
Chemical Vapor Deposition of Cobalt Nitride and Its Application as an Adhesion-enhancing Layer for Advanced Copper Interconnects

Jing Yang 1 Harish B Bhandari 1 Roy Gordon 1 2 Qing Min Wang 3 Jean-Sebastien Lehn 3 Deo Shenai 3

1Harvard Cambridge USA2Harvard University Cambridge USA3Dow Chemical Midland USA

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12:45 PM - C4.5
Ru Thin Film Characteristics Deposited by ALD

Taeyong Park 1 Jaesang Lee 2 Jingyu Park 2 Heeyoung Jeon 2 Hyeongtag Jeon 1

1Hanyang University Seoul Republic of Korea2Hanyang University Seoul Republic of Korea

Show Abstract

2012-04-12   Show All Abstracts

Symposium Organizers

Geraud Dubois, IBM Almaden Research Center
Francesca Iacopi, Griffith University
Atsuko Sekiguchi, National Institute of Advanced Industrial Science and Technology
Sean W. King, Intel Corporation
Christian Dussarat, Air Liquide Delaware Research and Technology Center

Symposium Support

Air Liquide
Air Products
Applied Materials, Inc.
IBM Almaden Research Center
Intel Corporation
TEL Technology Center, America, LLC

C10: Packaging III (CPI amp; TSV)
Session Chairs
Francesca Iacopi
Thursday PM, April 12, 2012
Moscone West, Level 2, Room 2003

2:30 AM - *C10.1
Understanding Chip-Package Interaction: Simulations of Crack Initiation and Propagation in Dielectric Stacks

Ganesh Subbarayan 1 Abhishek Tambat 1 Hung-Yun Lin 1 Dae Young Jung 2 Bahgat G Sammakia 2

1Purdue University West Lafayette USA2SUNY at Binghamton Binghamton USA

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3:00 AM - C10.2
Inspecting the Effect of Thermal Stress on Copper Filled through Silicon Vias by Laboratory X-Ray Microscopy

LayWai Kong 1 2 Jeff Gelb 3 James R Lloyd 1 Michael Liehr 1 Wenbing Yun 3 Alain C Diebold 1

1College of Nanoscale Science amp; Engineering At SUNY Albany Albany USA2GLOBALFOUNDRIES Albany USA3Xradia, Inc Pleasanton USA

Show Abstract

3:15 AM - C10.3
Mechanical Stress Measurements in Cu through-Silicon via (TSV) Using Synchrotron X-Ray Microdiffraction for 3-D Integration: Effect of Thermal History

Arief Budiman 1 H. Shin 2 Young-Chang Joo 2 H. Son 3 M. Suh 3 Q. Chung 3 K. Byun 3 R. Caramto 4 L. Smith 4 M. Kunz 5 N. Tamura 5

1Los Alamos National Laboratory (LANL) Los Alamos USA2Seoul National University Seoul Republic of Korea3Hynix, Inc. Seoul Republic of Korea4SEMATECH New York USA5Advanced Light Source (ALS) Berkeley USA

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3:30 AM - C10.4
Silicon Interposer Reliability Optimization through Process-oriented Stress Modeling

Sri Ramakanth Kappaganthu 1 Xiaopeng Xu 2

1Synopsys Pvt Ltd Hyderabad India2Synopsys Inc. Mountain View USA

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3:45 AM - C10.5
Cu TSV CMP Via Reveal Planarization Modeling

Max Gage 1 Thomas Gartner 1 Zhihong Wang 1 Wen-Chiang Tu 1

1Applied Materials Sunnyvale USA

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4:00 AM -
BREAK

C11: 3D and Other Interconnects
Session Chairs
Francesca Iacopi
Thursday PM, April 12, 2012
Moscone West, Level 2, Room 2003

4:30 AM - *C11.1
Roadmap for 3D Systems and Its Implications on Material Properties

Marchal Pol 1

1IMEC Leuven Belgium

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5:00 AM - C11.2
Stretchable and Robust Interconnects of Conductive CNT Rubbers Fabricated by Lithography Technique and Transfer Process on a Rubber Substrate

Atsuko Sekiguchi 1 Takeo Yamada 1 Motoo Yumura 1 Kenji Hata 1 2

1National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Japan2Japan Science and Technology Agency (JST) Kawaguchi Japan

Show Abstract

5:15 AM - C11.3
Oriented Multi-layer Graphene Grown Directly on SiO2 Dielectric Film by Annealing Sputtered Amorphous Carbon with a Co Catalyst

Motonobu Sato 1 Makoto Takahashi 1 Tomo Murakami 1 Haruhisa Nakano 1 Akio Kawabata 1 Takayuki Muro 2 Yuji Takakuwa 3 Mizuhisa Nihei 1 Naoki Yokoyama 1

1AIST Tsukuba Japan2JASRI Sayo-gun Japan3Tohoku Univ. Sendai Japan

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5:30 AM - C11.4
Increased Current Capacity of Graphene Interconnects on Synthetic Diamond

Jie Yu 1 Guanxiong Liu 1 Anirudha V Sumant 2 Alexander A Balandin 1

1University of California, Riverside Riverside USA2Argonne National Laboratory Argonne USA

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C8: Packaging I (CPI)
Session Chairs
Francesca Iacopi
Thursday AM, April 12, 2012
Moscone West, Level 2, Room 2003

9:30 AM - *C8.1
Mechanical Properties of Cu/ULK Interconnect Stacks Studied with Double Cantilever Beam and Nanoindentation Techniques

Ehrenfried Zschech 1 Sven Niese 1 KongBoon Yeap 1 Jeff Gelb 2 Reinhold H Dauskardt 3

1Fraunhofer Institute for Nondestructive Testing Dresden Germany2Xradia Inc. Pleasanton USA3Stanford University Stanford USA

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10:00 AM - C8.2
Quantitative Determination of the Mechanical Stresses in BEoL Films and Structures on Si Wafers with Sub-micron Spatial Resolution by fibDAC

Sven Rzepka 1 Dietmar Vogel 1 Ellen Auerswald 1 Bernd Michel 1

1Fraunhofer ENAS Chemnitz Germany

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10:15 AM - C8.3
Microprobing the Effects of Dielectric Layers and through-silicon Vias for Advanced Packaging

Alexander Hsing 1 Holm Geisler 2 Francesca Iacopi 3 Kashi Machani 2 Matthias U Lehr 2 Sven Niese 4 Yvonne Ritz 4 Jens Paul 2 Paul Besser 3 Reinhold H Dauskardt 1

1Stanford University Stanford USA2GLOBALFOUNDRIES Dresden Module One LLC amp; Co. KG Dresden Germany3GLOBALFOUNDRIES Sunnyvale USA4Fraunhofer Institute for Nondestructive Testing Dresden Germany

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10:30 AM - C8.4
Fracture in Complex Interconnect Multilayer Structures

Minkyu Kim 1 Reinhold H Dauskardt 1

1Stanford University Stanford USA

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10:45 AM - C8.5
Moisture-resistant Hybrid Layers for High-performance Polymer/Silicon Adhesion

Marta Giachino 1 Chaohui Wang 1 Shanwa M Liff 2 Nisha Ananthakrishnan 2 Reinhold H Dauskardt 1

1Stanford University Stanford USA2Intel Chandler USA

Show Abstract

11:00 AM -
BREAK

C9: Packaging II (Electromigration)
Session Chairs
Francesca Iacopi
Thursday AM, April 12, 2012
Moscone West, Level 2, Room 2003

11:30 AM - *C9.1
Electromigration Trends for Die- and Package-level Interconnects

Christine Hau-Riege 1 You-Wen Yau 2

1Qualcomm Santa Clara USA2Qualcomm San Diego USA

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12:00 PM - C9.2
Microstructural Investigation of Electromigration in Pb-free Microbumps for 3D-IC

YiTing Huang 1 Hsueh-Hsien Hsu 1 Albert T. Wu 1

1National Central University Jhongli Taiwan

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12:15 PM - C9.3
Nucleation Behavior of Sn-Ag-Cu Solder Alloys

Daniel Lewis 1 Jie Mao 1

1Rensselaer Polytechnic Institute Troy USA

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12:30 PM - C9.4
3D Tomography Study of Void Formation in Pb-free Flip Chip Solder Joints during Electromigration

Tian Tian 1 Yuan-Wei Chang 2 Alastair MacDowell 3 Dula Parkinson 3 Chih Chen 2 King-Ning Tu 1

1UCLA Los Angeles USA2National Chiao Tung University Hsinchu Taiwan3Lawrence Berkeley National Lab Berkeley USA

Show Abstract