Meetings & Events

2012 MRS Spring Meeting Logo

2012 MRS Spring Meeting & Exhibit

April 9-13, 2012 | San Francisco
Meeting Chairs: Lara A. Estroff, Jun Liu, Kornelius Nielsch, Kazumi Wada

Symposium F : Phase-Change Materials for Memory and Reconfigurable Electronics Applications

2012-04-10   Show All Abstracts

Symposium Organizers

Paul Fons, National Institute for Advanced Industrial Science and Technology Nanodevice Innovation Center
Bart J. Kooi, University of Groningen Zernike Institute for Advanced Materials and Materials Innovation Institute M2i
Bong-Sub Lee, Invensas Corporation
Martin Salinga, I. Physikalisches Institut IA RWTH Aachen
Rong Zhao, Data Storage Institute A*STAR
F3: Theory of Phase-change Materials, Theory II
Session Chairs
Paul Fons
Tuesday PM, April 10, 2012
Moscone West, Level 2, Room 2004

2:30 AM - F3.1
Disorder-Induced Localization in Phase Change Materials

Matthias Wuttig 1 Hanno Volker 1 Nicholas Breznay 2 Aharon Kapitulnik 2

1RWTH Aachen Aachen Germany2Stanford University Stanford CA 94305 USA

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2:45 AM - *F3.2
Large Scale Molecular Dynamics Simulations of Phase Change Materials

Marco Bernasconi 1 Gabriele Sosso 1 Giacomo Miceli 1 Davide Donadio 3 Sebastiano Caravati 2 Joerg Behler 4

1University of Milano-Bicocca Milano Italy2ETHZ c/o USI-Campus Lugano Switzerland3Max Planck Institute for Polymer Research Mainz Germany4Ruhr-Universitauml;t Bochum Bochum Germany

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3:15 AM - F3.3
Defects in Interfacial Phase Change Memories

Bolong Huang 1 John Robertson 1

1Cambridge University Cambridge United Kingdom

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3:30 AM - F3.4
Ab initio Molecular-dynamics Simulations of the Early Stages of Crystallization in Phase-change Materials: The Significance of the Medium-range Ordered Planar Structure and Vacancies

Tae-Hoon Lee 1 Stephen Elliott 1

1University of Cambridge Cambridge United Kingdom

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3:45 AM - F3.5
The Crystallization of Ge2Sb2Te5 Alloys: An Ab initio Molecular Dynamics Study

Paulo Sergio Branicio 1

1Institute of High Performance Computing Singapore Singapore

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4:00 AM -
BREAK

F4: Device and Industry Trends
Session Chairs
Bong-Sub Lee
Tuesday PM, April 10, 2012
Moscone West, Level 2, Room 2004

4:15 AM - *F4.1
Material Requirements of Advanced Phase-change Memory

Hsiang-Lan Lung 1 2

1IBM/Macronix PCRAM Joint Project, IBM T. J. Watson Research Center Yorktown Heights USA2Macronix International Co., Ltd. Science Park, Hsinchu Taiwan

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4:45 AM - F4.2
Threshold Voltage Drift in Phase Change Memories: Scaling and Modeling

Nicola Ciocchini 1 Marco Cassinerio 1 Davide Fugazza 1 Daniele Ielmini 1

1Politecnico di Milano Milano Italy

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5:00 AM - F4.3
Effects of Defect Annihilation and Stress Relaxation on the Resistance Drift in Amorphous Ge2Sb2Te5

Ju-Young Cho 1 Tae-Youl Yang 1 Yong-Jin Park 1 Young-Chang Joo 1

1Seoul National University Seoul Republic of Korea

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5:15 AM - *F4.4
Progress in Technology and Characteristics of 20 nm Node PRAM

Youn-Seon Kang 1 S. P Koh 1 M. J Kang 1 Y. J Song 1 J. H Park 1 H. Jeong 1 T. H Ahn 1 S. J Ahn 1 D. W Ha 1 B. C Kim 1 S. W Nam 1 G. Jeong 1 C. Chung 1

1Samsung Electronics Co. Gyeonggi-Do Republic of Korea

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5:45 AM - F4.5
Flexible Phase Change Memory Array on Plastic Substrates

Byoungkuk Yoo 1 Keon Jae Lee 1

1Korea Advanced Institute of Science and Technology Daejeon Republic of Korea

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F5: Poster Session: Phase-change Materials
Session Chairs
Rong Zhao
Tuesday PM, April 10, 2012
Moscone West, Level 1, Exhibit Hall

6:00 AM - F5.1
Determination of the Anisotropic Elastic Properties of Ge1Sb2Te4

Krisztian Kohary 1 Arnaud Marmier 1 C David Wright 1

1University of Exeter Exeter United Kingdom

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6:00 AM - F5.10
Binary Chalcogenide Nanowires for Implementing Nonvolatile Phase-change Memory

Robin Jacobs-Gedrim 1 Bhaskar Nagabhirava 1 Jeff Sun 2 Bin Yu 1

1SUNY Albany Albany USA2Soochow University Suzhou China

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6:00 AM - F5.11
Electronic Structure of a Stable Phase-change Material GeSb_2Te_4: An Ab-initio Calculation

Sibel Kurt 1 Seher Bayram 2 Cagil Kaderoglu 2 Sibel Ozkaya 3 Mehmet Cakmak 4 Bora Alkan 2 Sinasi Ellialtioglu 1

1Middle East Technical University Ankara Turkey2Ankara University Ankara Turkey3Aksaray University Aksaray Turkey4Gazi University Ankara Turkey

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6:00 AM - F5.12
Composition Threshold of Phase Change Characteristics in Te Substituted Sn-Sb-Se Films for Memory Applications

Ravi Chander 1 2 R. Thangaraj 1

1GNDU Amritsar India2Govt Polytechnic College Bhikhiwind India

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6:00 AM - F5.13
MOCVD Chalcogenide Film Deposition Technology for 150 to 200 mm Wafers

Elane Coleman 1 Tom Salagaj 1 Nick M. Sbrockey 1 Gary S Tompa 1

1Structured Materials Industries Piscataway USA

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6:00 AM - F5.14
Fabrication and Characterization of Solution-phase Deposited GeTe Nanocomposites

Ann-Katrin Ursula Michel 1 2 Tracy Mattox 1 Marissa Caldwell 1 Richa Sharma 1 Robert Y Wang 1 Matthias Wuttig 2 Delia J Milliron 1

1Lawrence Berkeley National Laboratories - Molecular Foundry Berkeley USA2I. Institute of Physics 1A Aachen Germany

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6:00 AM - F5.15
Study of GeTe with Boron Doping for Phase Change Memory Applications

Sandhya Chandrashekhar 1 Audrey Bastard 2 3 Pierre Noe 1 Jean-Claude Bastien 1 4 Alain Toffoli 1 Ewen Henaff 1 Anne Roule 1 Alain Persico 1 Frederic Fillot 1 Olivier Renault 1 Xavier Biquart 1 Germain Servanton 2 Francois Pierre 1 Berangere Hyot 1 Luca Perniola 1 Veronique Sousa 1 Barbara De Salvo 1 Gilles Reimbold 1 Sylvain Maitrejean 1 Giada Ghezzi 1

1CEA Grenoble Cedex 9 France2STMicroelectronics Crolles France3CNRS Toulouse France4UMR CNRS 6226 Rennes France

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6:00 AM - F5.2
Theoretical Scaling Analysis of Phase Change Memory

Jie Liu 1 Bin Yu 2 Anant Anantram 1

1Univ of Washington Seattle USA2The State University of New York, Albany New York USA

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6:00 AM - F5.3
Sb-Te Phase-change Nanowires by Templated Electrodeposition

Chandrasiri Ihalawela 1 Gang Chen 1 Russell Cook 2 Xiao-Min Lin 3 Hsien-Hau Wang 4

1Ohio University Athens USA2Argonne National Lab Argonne USA3Argonne National Lab Argonne USA4Argonne National Lab Argonne USA

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6:00 AM - F5.4
Electromigration Behaviors of Pure and Nitrogen-doped Ge2Sb2Te5 Chalcogenide Layers under DC Bias

Yin-Hsien Huang 1 Chi-Hang Hang 1 Yu-Jen Huang 1 Tsung-Eong Hsieh 1

1National Chiao Tung University Hsinchu Taiwan

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6:00 AM - F5.5
Modeling of Phase Change Memory Mushroom Cells with Thermoelectric Effects

Azer Faraclas 1 Helena Silva 1 Ali Gokirmak 1

1University of Connecticut Storrs USA

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6:00 AM - F5.6
Application of Phase Change Materials in Photonics

Robert E Simpson 1 Jan Renger 1 Davide Janner 1 Miquel Rude 1 Vittoria Finazzi 1 Romain Quidant 1 Valerio Pruneri 1

1ICFO - Institut de Ciegrave;ncies Fotograve;niques Castelldefels Spain

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6:00 AM - F5.7
Structural and Optical Properties of Phase-change Ge1-xTex Thin Films

Jun-Woo Park 1 Misun Song 2 Seokhyun Yoon 2 Hyungkwang Lim 3 Doo Seok Jeong 3 Byung-ki Cheong 3 Hosun Lee 1

1Kyung Hee University Yong-In Republic of Korea2Ewha Womans University Seoul Republic of Korea3Korea Institute of Science and Technology Seoul Republic of Korea

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6:00 AM - F5.8
Ultra-dense and Ultra-thin Electron System from Gate-controlled Surface Metal-insulator Transition of Vanadium Dioxide

Kai Liu 1 2 Deyi Fu 1 Jinbo Cao 1 2 Joonki Suh 1 Kevin X Wang 1 Junqiao Wu 1 2

1University of California, Berkeley Berkeley USA2Lawrence Berkeley National Laboratory Berkeley USA

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F1: Theory of Phase-change Materials, Theory I
Session Chairs
Martin Salinga
Tuesday AM, April 10, 2012
Moscone West, Level 2, Room 2004

9:45 AM - *F1.1
A Strategy to Achieve Sub-nanosecond Write Speeds: Ab initio Molecular-dynamics Simulations of Nucleation in GST

Stephen Elliott 1 Desmond Loke 1 2 3 Tae-Hoon Lee 1

1University of Cambridge Cambridge United Kingdom2Data Storage Institute Singapore Singapore3NUS Singapore Singapore

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10:15 AM - *F1.2
Ge-Te Bond Polyvalency and Polyamorphism in GeTe-based Phase-change Alloys

Alexander Kolobov 1 Paul Fons 1 Milos Krbal 1 Junji Tominaga 1

1AIST Tsukuba Japan

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10:45 AM -
BREAK

11:15 AM - F1.3
Electron Self-trapping in Ge2Se3 and Its Role in Ag and Sn Incorporation

Arthur Edwards 1 Kristy A Campbell 2

1Air Force Research Laboratory Kirtland AFB USA2Boise State University Boise USA

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11:30 AM - F1.4
Electric Field Induced Crystallization in Phase-change Materials for Memory Applications

Krisztian Kohary 1 Jorge Vazquez-Diosdado 2 Peter Ashwin 2 C David Wright 1

1University of Exeter Exeter United Kingdom2University of Exeter Exeter United Kingdom

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F2: Experiment I
Session Chairs
Bart Kooi
Tuesday AM, April 10, 2012
Moscone West, Level 2, Room 2004

11:45 AM - *F2.1
Development of Phase-Change Magnetic Materials

Luping Shi 1 Wendong Song 1 Kewu Bai 2 Ding Ding 1

1Data Storage Institute, (A*STAR) Agency for Science, Technology and Research Singapore Singapore2Institute of High Performance Computing, (A*STAR) Agency for Science, Technology and Research Singapore Singapore

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12:15 PM - F2.2
Transrotational Crystalline Nanostructure Formed as a Result of Glass-crystal Transitions

Vladimir Yu. Kolosov 1

1Ural Federal University Ekaterinburg Russian Federation

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12:30 PM - F2.3
New Insights on the Crystallization Process in Ge15Sb85 Phase Change Material: A Combined Simultaneous Calorimetric and Quick-EXAFS Measurement

Marie-Vanessa Coulet 1 Peter Zalden 2 Giuliana Aquilanti 3 Berangere Andre 1 Carmello Prestipino 4 Olivier Mathon 4

1CNRS Marseille France2RWTH Aachen Germany3Sincrotrone Trieste Trieste Italy4ESRF Grenoble France

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12:45 PM - F2.4
Finite Element Analysis of Thermoelectric Effect in Phase-change Memory Cells

Faruk Dirisaglik 1 Gokhan Bakan 1 Ali Gokirmak 1 Helena Silva 1

1University of Connecticut Storrs USA

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2012-04-11   Show All Abstracts

Symposium Organizers

Paul Fons, National Institute for Advanced Industrial Science and Technology Nanodevice Innovation Center
Bart J. Kooi, University of Groningen Zernike Institute for Advanced Materials and Materials Innovation Institute M2i
Bong-Sub Lee, Invensas Corporation
Martin Salinga, I. Physikalisches Institut IA RWTH Aachen
Rong Zhao, Data Storage Institute A*STAR
F8: Experiment III, Electrical Effects
Session Chairs
Bong-Sub Lee
Wednesday PM, April 11, 2012
Moscone West, Level 2, Room 2004

2:30 AM - *F8.1
Ultrafast Dynamics and Coherent Control of Phase Changes in Ge-Sb-Te Materials

Muneaki Hase 1

1University of Tsukuba Tsukuba Japan

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3:00 AM - F8.2
Effect of dopant and contact materials on the resistance drift and the reduction for high density PCRAM

Rong Zhao 1 Minghua Li 1 Theng Kiat Tan 1 Leong Tat Law 1 Weijie Wang 1

1Data Storage Institute Singapore Singapore

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3:15 AM - F8.3
Volume Changes and Void Formations in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 Films, with Repeated Phase Changes

Dokyu Lee 1 Kihoon Do 1 3 Doosung Lee 1 Dohyung Kim 3 Hyunchul Sohn 1 Mann-Ho Cho 2 Dae-Hong Ko 1

1Yonsei University Seoul Republic of Korea2Yonsei University Seoul Republic of Korea3Samsung Electronics Co. Hwasung Republic of Korea

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3:30 AM - F8.4
Defect States in Amorphous Phase-change Materials

Jennifer Maria Luckas 1 4 Pascal Rausch 1 Daniel Krebs 2 Peter Zalden 1 Janika Boltz 1 Jean-Yves Raty 3 Martin Salinga 1 Christophe Longeaud 4 Matthias Wuttig 1

1RWTH Aachen Aachen Germany2IBM Zuuml;rich Research Laboratory Ruuml;schlikon Switzerland3University of Liege Liege Belgium4Laboratoire de Geacute;nie Electrique de Paris Paris France

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3:45 AM -
BREAK

4:15 AM - *F8.5
Low-Power Phase-Change Memory with Carbon Nanotube Electrodes

Eric Pop 1 Feng Xiong 1 Albert Liao 1 Yuan Dai 1 Myung-Ho Bae 1 Ashkan Behnam 1

1Univ Illinois Urbana-Champaign Urbana USA

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4:45 AM - F8.6
Evidence for Correlated Structural and Electrical Changes in Chalcogenide Thin Films from Combined Synchrotron X-Ray Techniques and Sheet Resistance Measurements during In situ Thermal Annealing

Magali Putero 1 Toufik Ouled-Khachroum 1 Marie-Vanessa Coulet 1 Damien Deleruyelle 1 Eric Ziegler 2 Christophe Muller 1

1Aix Marseille Universiteacute; Marseille Cedex 20 France2ESRF Grenoble France

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F9: Experiment IV
Session Chairs
Rong Zhao
Wednesday PM, April 11, 2012
Moscone West, Level 2, Room 2004

5:00 AM - F9.1
Single-crystal Epitaxially Grown GST on Si (111) by Physical Vapor Deposition and by Solid Phase Epitaxy

Guy M Cohen 1 Simone Raoux 1 Yu Zhu 1 Marinus Hopstaken 1 Horatio Wildman 1 Siegfried Maurer 1 Alessandro Giussani 2 Raffaella Calarco 2

1IBM T.J. Watson Research Center Yorktown Heights USA2Paul Drude Institute fuuml;r Festkouml;rperelektronik Berlin Germany

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5:15 AM - F9.2
Effects of Stresses on Competing Crystal Growth Modes in Ge-Sb Materials

Gert Eising 1 Bart J Kooi 1

1University of Groningen Groningen Netherlands

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5:30 AM - F9.3
Structure and Vibrational Modes of Ge2Sb2Te5

Peter Erhard Zalden 1 Simon Siegert 1 Philipp Merkelbach 1 Jean-Yves Raty 2 Herny Fischer 3 Stephane Rols 3 Mark Johnson 3 Matthias Wuttig 1

1RWTH Aachen Aachen Germany2Universiteacute; de Liegrave;ge Sart-Tilman Belgium3Institut Laue-Langevin Grenoble France

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5:45 AM - F9.4
Nanometer Resolution XANES Imaging of Individual PC-RAM Devices

Jan Hinnerk Richter 1 Junji Tominaga 1 Paul Fons 1 2 Alex B Kolobov 1 2 Milos Krbal 1 Xiaomin Wang 1 Robert E Simpson 1

1AIST Tsukuba Japan2SPring-8 Koutou 1-1-1 Japan

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F6: Experiment II, Growth
Session Chairs
Bart Kooi
Wednesday AM, April 11, 2012
Moscone West, Level 2, Room 2004

9:30 AM - *F6.1
Materials Design for Phase Change Random Access Memory

Simone Raoux 1 Huai-Yu Cheng 2 Jury Sandrini 3 Jean L Jordan-Sweet 1 David Cabrera 4 Archana Devasia 4 Santosh Kurinec 4

1IBM T. J. Watson Research Center Yorktown Heights USA2Macronix International Co., Ltd. Hsinchu Taiwan3Turin Polytechnic University Turin Italy4Rochester Institute of Technology Rochester USA

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10:00 AM - F6.2
Magnetic Properties from Interfacial Phase-change Memory

Junji Tominaga 1 Paul J Fons 1 Alexander V Kolobov 1 Toshimichi Shintani 1 Muneaki Hase 2

1National Institute of Advanced Industrial Science amp; Technology Tsukuba Japan2Tsukuba University Tsukuba Japan

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10:15 AM - F6.3
Growth Morphology and Structure of GeTe/Sb2Te3 Heterostructures Grown on Si(111) Substrates

Raffaella Calarco 1 Karthick Perumal 1 Alessandro Giussani 1 Peter Rodenbach 1 Michael Hanke 1 Henning Riechert 1

1Paul-Drude-Institut fuuml;r Festkouml;rperelektronik Berlin Germany

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