2018 MRS Fall Meeting Home

Symposium EP08 : Ultra-Wide-Bandgap Materials and Devices

2018-11-26   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mark Hollis, Massachusetts Institute of Technology - Lincoln Laboratory
David Moran, University of Glasgow
Rachael Myers-Ward, U.S. Naval Research Laboratory

Symposium Support

BAE Systems
Novel Crystal Technology, Inc.
EP08.01: Oxide Devices I
Session Chairs
Monday AM, November 26, 2018
Hynes, Level 2, Room 209

8:30 AM - EP08.01.01
Investigation of Process Techniques for Ga2O3 Based Diodes

Fan Ren1,Jiancheng Yang1,Stephen Pearton1,Marko Tadjer2,Akito Kuramata3

University of Florida1,U.S. Naval Research Laboratory2,Tamura Corporation and Novel Crystal Technology, Inc3

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9:00 AM - EP08.01.02
Advances in Ga2O3 MOSFETs for Power Switching and Beyond

Masataka Higashiwaki1,Man Hoi Wong1,Takafumi Kamimura1,Yoshiaki Nakata1,Chia-Hung Lin1,Akinori Takeyama2,Takahiro Makino2,Takeshi Ohshima2,Manikant Singh3,James Pomeroy3,Michael Uren3,Michael Casbon4,Paul Tasker4,Ken Goto5,Kohei Sasaki5,Akito Kuramata5,Shigenobu Yamakoshi5,Martin Kuball3,Hisashi Murakami6,Yoshinao Kumagai6

National Institute of Information and Communications Technology1,National Institutes for Quantum and Radiological Science and Technology2,University of Bristol3,Cardiff University4,Tamura Corporation5,Tokyo University of Agriculture and Technology6

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9:30 AM - EP08.01.03
Gate Dielectrics for Gallium Oxide MISFETs

Sarit Dhar1,Asanka Jayawardena1,Ayayi Ahyi1,Rahul Ramamurthy2,Dallas Morisette2,Jacob Leach3

Auburn University1,Purdue University2,Kyma Technologies Inc.3

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9:45 AM - EP08.01.04
Nitrogen Ion Implantation for the Effective Inter-Device Isolation of β-Ga2O3 Power Transistors

Kornelius Tetzner1,Eldad Bahat-Treidel1,Andreas Thies1,Frank Brunner1,Günter Wagner2,Joachim Würfl1

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik1,Leibniz-Institut für Kristallzüchtung2

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10:00 AM -
BREAK


EP08.02: Late News—Gallium Oxide and III-Nitride Materials
Session Chairs
Monday AM, November 26, 2018
Hynes, Level 2, Room 209

10:30 AM - EP08.02.01
High Performance β-Ga2O3 Based Vertical Solar Blind Schottky Photodiode

Fikadu Alema1,Brain Hertog1,Andrei Osinsky1,Yuewei Zhang2,Akhil Mauze2,James Speck2,Partha Mukhopadhyay3,Winston V. Schoenfeld3

Agnitron Technology Incorporated1,University of California, Santa Barbara2,University of Central Florida3

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10:45 AM - EP08.02.02
Device Quality β-Ga2O3 and β-(AlxGa1-x)2O3 Heterostructures—Control of Doping and Impurity incorporation in MOCVD Process

Fikadu Alema1,Andrei Osinsky1,Yuewei Zhang2,Akhil Mauze2,James Speck2

Agnitron Technology Incorporated1,University of California, Santa Barbara2

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11:00 AM - EP08.02.03
Polarization Engineering of ε-(AlGa)2O3/ε-Ga2O3 Heterostructures

Praneeth Ranga1,Sung Beom Cho2,Rohan Mishra2,Sriram Krishnamoorthy1

University of Utah1,Washington University in St. Louis2

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11:15 AM - EP08.02.04
Development of Selective Trench Refilling Epitaxy Process to Form p-n Junction on GaN-on-Sapphire Substrate

Sizhen Wang1,Andrew Klump1,Felix Kaess2,1,Ramon Collazo1,Zlatko Sitar1,Alex Huang3

North Carolina State University1,IQE, Inc.2,The University of Texas at Austin3

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11:30 AM - EP08.02.05
AlGaN/GaN HEMT Operation with Body-Diode Back-Gate Control—Enabling Dynamic Control of Device Behavior

Isra Mahaboob1,Michael Yakimov1,Kasey Hogan1,Emma Rocco1,Sean Tozier1,F.Shadi Shahedipour-Sandvik1

SUNY Polytechnic Institute1

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11:45 AM - EP08.02.06
InGaN Nanowire Light Emitting Diode Integrated with Field Effect Transistor

Matthew Hartensveld1,Jing Zhang1

Rochester Institute of Technology1

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1:30 PM - EP08.03.01
Electrical and Thermal Studies of β-Ga2O3 Nano-Membrane Field-Effect Transistors on Different Substrates

Peide Ye1

Purdue University1

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2:00 PM - EP08.03.02
Developing New High Thermal Conductivity Materials for Thermal Management of High-Power Electronics

Yongjie Hu1,Joon Sang Kang1,Man Li1,Huuduy Nguyen1,Huan Wu1

University of California, Los Angeles1

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2:15 PM - EP08.03.03
Etchpits with a Core Related to the Leakage Current of HVPE (001) β-Ga2O3 Schottky Barrier Diodes

Makoto Kasu1,Eitesu Katagiri1,Kohei Sasaki2,3,Katsumi Kawasaki4,Jun Hirabayashi4,Akito Kuramata2,3

Saga University1,Novel Crystal Technologies2,Tamura Corporation3,TDK Corporation4

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2:30 PM - EP08.03.04
Band Engineering of Ga2O3 and In2O3 by Adding Post Transition Metals

Fernando Sabino1,Anderson Janotti1

University of Delaware1

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2:45 PM - EP08.03.05
Stability, Band Gap and Band Edge Positions of (AlxGa1-x)2O3 Alloys

Wei Li1,Tianshi Wang1,Chaoying Ni1,Anderson Janotti1

University of Delaware1

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3:00 PM -
BREAK


3:30 PM - EP08.03.06
β-Ga2O3 Nano-Electronic Devices

Jihyun Kim1

Korea University1

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4:00 PM - EP08.03.07
Anisotropic Optical Properties in Zn2GeO4 and Ga2O3 Nanowires

Bianchi Mendez1,Jaime Dolado1,Manuel Alonso-Orts1,Iñaki Lopez2,1,Pedro Hidalgo1,Emilio Nogales1

University of Complutense1,Istituto Nazionale di Ottica2

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4:15 PM - EP08.03.08
Gallium Oxide Nanowires for Gas Sensing Applications—Growth, Device Fabrication and Gas Response

Guillem Domenech-Gil1,Irmina Peiró1,Jordi Sama1,Paolo Pellegrino1,Sergi Hernández1,Mauricio Moreno1,J.D. Prades1,Isabel Gràcia2,Carles Cané2,Sven Barth3,Albert Romano-Rodriguez1

Universitat de Barcelona (UB)1,CNM2,TUW3

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4:30 PM - EP08.03.09
New Perspective of Room-Temperature Gas Sensor Using Ionic Conduction Based SnO2 Nanorods

Young Geun Song1,2,Young-Seok Shim3,Jun Min Suh4,Ho Won Jang4,Byeong-Kwon Ju2,Chong-Yun Kang1,2

Korea Institute of Science and Technology1,Korea University2,Korea Advanced Institute of Science and Technology3,Seoul National University4

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4:45 PM - EP08.03.10
Doping Dependence of Electrical Characteristics of Zn-O-N Thin-Film Transistors

Hiroshi Tsuji1,Tatsuya Takei1,Mitsuru Nakata1,Masashi Miyakawa1,Yoshihide Fujisaki1

NHK Science & Technology Research Labs1

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2018-11-27   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mark Hollis, Massachusetts Institute of Technology - Lincoln Laboratory
David Moran, University of Glasgow
Rachael Myers-Ward, U.S. Naval Research Laboratory

Symposium Support

BAE Systems
Novel Crystal Technology, Inc.
EP08.04: Oxide Growth
Session Chairs
Tuesday AM, November 27, 2018
Hynes, Level 2, Room 209

8:30 AM - EP08.04.01
Bulk Crystal Growth and Devices Fabrication of β-Ga2O3

Xutang Tao1

Shandong University1

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9:00 AM - EP08.04.02
Epitaxial Lateral Overgrowth of α-Ga2O3 on Sapphire Substrates

Riena Jinno1,Nobuhiro Yoshimura1,Kentaro Kaneko1,Shizuo Fujita1

Kyoto University1

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9:15 AM - EP08.04.03
Low Pressure CVD Growth of N-Type Ga2O3 Thin Films Using Solid Ge Source

Praneeth Ranga1,Berardi Sensale-Rodriguez1,Michael Scarpulla1,Sriram Krishnamoorthy1

University of Utah1

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9:30 AM - EP08.04.04
High-Bias-Stability in Atomic-Layer-Deposition Al2O3 by Post-Deposition-Anneal on Wide- and Ultra-Wide-Bandgap Semiconductors

Kiyotaka Horikawa1,Atsushi Hiraiwa2,Satoshi Okubo1,Taisuke Kageura1,Hiroshi Kawarada1

Waseda University1,Nagoya University2

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9:45 AM -
BREAK


10:15 AM - EP08.04.05
Molecular Beam Epitaxy of β-Ga2O3 and β-(AlxGa1-x)2O3

Elaheh Ahmadi1,Onur Koksaldi2,Feng Wu2,Umesh Mishra2,James Speck2

University of Michigan1,University of California, Santa Barbara2

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10:45 AM - EP08.04.06
High-Quality β-(AlxGa1-x)2O3/Ga2O3 (010) and Si-Doped β-(AlxGa1-x)2O3/Ga2O3 (010) Heterostructures Grown by Pulsed Laser Epitaxy

Shanee Pacley1,Shin Mou1,Adam Neal1,Kurt Eyink1,Krishnamurthy Mahalingam1,Lawrence Grazulius1,Eric Heller1,Brandon Howe1,Kelson Chabak1,Gregg Jessen1

Air Force Research Laboratory1

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11:00 AM - EP08.04.07
TEM-EELS Analysis of Ga2O3 /SiO2 and Ga2O3 /Al2O3 Interface Structures with Electron Beam Induced Crystallization of Al2O3 Gate Layer

Christopher Klingshirn1,Asanka Jayawardena2,Sarit Dhar2,Tsvetanka Zheleva3,Aivars Lelis3,Lourdes Salamanca-Riba1

University of Maryland1,Auburn University2,U.S. Army Research Laboratory3

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11:15 AM - EP08.04.08
Scanning Transmission Electron Microscopy of Gallium Oxide Materials and Interfaces

Jared Johnson1,Yuewei Zhang1,Md Rezaul Karim1,Hongping Zhao1,Siddharth Rajan1,Jinwoo Hwang1

Ohio State University1

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EP08.05: Oxide Physics
Session Chairs
Tuesday PM, November 27, 2018
Hynes, Level 2, Room 209

1:45 PM - EP08.05.01
Topics in the Ab Initio Theory of Ga2O3, Mainly the ε Phase

Vincenzo Fiorentini1,Barbara Maccioni1,Roberta Farris1,Paola Alippi2

University di Cagliari1,CNR-ISM2

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2:15 PM - EP08.05.02
Characterizing the Influence of Impurities and Dopants on the Electrical Properties of Ga2O3 Through Hybrid Functional Calculations

Joel Varley1

Lawrence Livermore National Laboratory1

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2:30 PM - EP08.05.03
Dynamically Modeled Current Conduction in Atomic-Layer-Deposited Al2O3 on Wide- and Ultra-Wide-Bandgap Semiconductors

Atsushi Hiraiwa1,2,Kiyotaka Horikawa1,Satoshi Okubo1,Hiroshi Kawarada1

Waseda University1,Nagoya University2

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2:45 PM - EP08.05.04
How the Competition Between Compact and Diffuse States Can Determine Luminescence Properties in Wide Gap Nitrides and Oxides

John Buckeridge1,Zijuan Xie2,Richard Catlow1,Aron Walsh2,David Scanlon1,Alexey Sokol1

University College London1,Imperial College London2

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3:00 PM -
BREAK


3:30 PM - EP08.05.05
Doping and Defects in β-Ga2O3

Klaus Irmscher1,Andreas Fiedler1,Zbigniew Galazka1,Günter Wagner1,Andreas Popp1,Robert Schewski1,Martin Albrecht1

Leibniz Institute for Crystal Growth1

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4:00 PM - EP08.05.06
Impact of Neutron Irradiation on Deep Levels in Ge-Doped (010) β-Ga2O3 Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Esmat Farzana1,Akhil Mauze2,James Speck2,Aaron Arehart1,Steven Ringel1

The Ohio State University1,University of California2

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4:15 PM - EP08.05.07
Interface Chemistry and Electrical Characteristics of 4H-SiC/SiO2 After Nitridation in Varying At