2018 MRS Fall Meeting Home

Symposium EP08 : Ultra-Wide-Bandgap Materials and Devices

2018-11-26   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mark Hollis, Massachusetts Institute of Technology - Lincoln Laboratory
David Moran, University of Glasgow
Rachael Myers-Ward, U.S. Naval Research Laboratory

Symposium Support

BAE Systems
Novel Crystal Technology, Inc.
EP08.01: Oxide Devices I
Session Chairs
Monday AM, November 26, 2018
Hynes, Level 2, Room 209

8:30 AM - *EP08.01.01
Investigation of Process Techniques for Ga2O3 Based Diodes

Fan Ren1,Jiancheng Yang1,Stephen Pearton1,Marko Tadjer2,Akito Kuramata3

University of Florida1,U.S. Naval Research Laboratory2,Tamura Corporation and Novel Crystal Technology, Inc3

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9:00 AM - *EP08.01.02
Advances in Ga2O3 MOSFETs for Power Switching and Beyond

Masataka Higashiwaki1,Man Hoi Wong1,Takafumi Kamimura1,Yoshiaki Nakata1,Chia-Hung Lin1,Akinori Takeyama2,Takahiro Makino2,Takeshi Ohshima2,Manikant Singh3,James Pomeroy3,Michael Uren3,Michael Casbon4,Paul Tasker4,Ken Goto5,Kohei Sasaki5,Akito Kuramata5,Shigenobu Yamakoshi5,Martin Kuball3,Hisashi Murakami6,Yoshinao Kumagai6

National Institute of Information and Communications Technology1,National Institutes for Quantum and Radiological Science and Technology2,University of Bristol3,Cardiff University4,Tamura Corporation5,Tokyo University of Agriculture and Technology6

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9:30 AM - EP08.01.03
Gate Dielectrics for Gallium Oxide MISFETs

Sarit Dhar1,Asanka Jayawardena1,Ayayi Ahyi1,Rahul Ramamurthy2,Dallas Morisette2,Jacob Leach3

Auburn University1,Purdue University2,Kyma Technologies Inc.3

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9:45 AM - EP08.01.04
Nitrogen Ion Implantation for the Effective Inter-Device Isolation of β-Ga2O3 Power Transistors

Kornelius Tetzner1,Eldad Bahat-Treidel1,Andreas Thies1,Frank Brunner1,Günter Wagner2,Joachim Würfl1

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik1,Leibniz-Institut für Kristallzüchtung2

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10:00 AM -
BREAK


EP08.02: Late News—Gallium Oxide and III-Nitride Materials
Session Chairs
Monday AM, November 26, 2018
Hynes, Level 2, Room 209

10:30 AM - EP08.02.01
High Performance β-Ga2O3 Based Vertical Solar Blind Schottky Photodiode

Fikadu Alema1,Brain Hertog1,Andrei Osinsky1,Yuewei Zhang2,Akhil Mauze2,James Speck2,Partha Mukhopadhyay3,Winston V. Schoenfeld3

Agnitron Technology Incorporated1,University of California, Santa Barbara2,University of Central Florida3

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10:45 AM - EP08.02.02
Device Quality β-Ga2O3 and β-(AlxGa1-x)2O3 Heterostructures—Control of Doping and Impurity incorporation in MOCVD Process

Fikadu Alema1,Andrei Osinsky1,Yuewei Zhang2,Akhil Mauze2,James Speck2

Agnitron Technology Incorporated1,University of California, Santa Barbara2

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11:00 AM - EP08.02.03
Polarization Engineering of ε-(AlGa)2O3/ε-Ga2O3 Heterostructures

Praneeth Ranga1,Sung Beom Cho2,Rohan Mishra2,Sriram Krishnamoorthy1

University of Utah1,Washington University in St. Louis2

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11:15 AM - EP08.02.04
Development of Selective Trench Refilling Epitaxy Process to Form p-n Junction on GaN-on-Sapphire Substrate

Sizhen Wang1,Andrew Klump1,Felix Kaess2,1,Ramon Collazo1,Zlatko Sitar1,Alex Huang3

North Carolina State University1,IQE, Inc.2,The University of Texas at Austin3

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11:30 AM - EP08.02.05
AlGaN/GaN HEMT Operation with Body-Diode Back-Gate Control—Enabling Dynamic Control of Device Behavior

Isra Mahaboob1,Michael Yakimov1,Kasey Hogan1,Emma Rocco1,Sean Tozier1,F.Shadi Shahedipour-Sandvik1

SUNY Polytechnic Institute1

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11:45 AM - EP08.02.06
InGaN Nanowire Light Emitting Diode Integrated with Field Effect Transistor

Matthew Hartensveld1,Jing Zhang1

Rochester Institute of Technology1

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1:30 PM - *EP08.03.01
Electrical and Thermal Studies of β-Ga2O3 Nano-Membrane Field-Effect Transistors on Different Substrates

Peide Ye1

Purdue University1

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2:00 PM - EP08.03.02
Developing New High Thermal Conductivity Materials for Thermal Management of High-Power Electronics

Yongjie Hu1,Joon Sang Kang1,Man Li1,Huuduy Nguyen1,Huan Wu1

University of California, Los Angeles1

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2:15 PM - EP08.03.03
Etchpits with a Core Related to the Leakage Current of HVPE (001) β-Ga2O3 Schottky Barrier Diodes

Makoto Kasu1,Eitesu Katagiri1,Kohei Sasaki2,3,Katsumi Kawasaki4,Jun Hirabayashi4,Akito Kuramata2,3

Saga University1,Novel Crystal Technologies2,Tamura Corporation3,TDK Corporation4

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2:30 PM - EP08.03.04
Band Engineering of Ga2O3 and In2O3 by Adding Post Transition Metals

Fernando Sabino1,Anderson Janotti1

University of Delaware1

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2:45 PM - EP08.03.05
Stability, Band Gap and Band Edge Positions of (AlxGa1-x)2O3 Alloys

Wei Li1,Tianshi Wang1,Chaoying Ni1,Anderson Janotti1

University of Delaware1

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3:00 PM -
BREAK


3:30 PM - *EP08.03.06
β-Ga2O3 Nano-Electronic Devices

Jihyun Kim1

Korea University1

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4:00 PM - EP08.03.07
Anisotropic Optical Properties in Zn2GeO4 and Ga2O3 Nanowires

Bianchi Mendez1,Jaime Dolado1,Manuel Alonso-Orts1,Iñaki Lopez2,1,Pedro Hidalgo1,Emilio Nogales1

University of Complutense1,Istituto Nazionale di Ottica2

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4:15 PM - EP08.03.08
Gallium Oxide Nanowires for Gas Sensing Applications—Growth, Device Fabrication and Gas Response

Guillem Domenech-Gil1,Irmina Peiró1,Jordi Sama1,Paolo Pellegrino1,Sergi Hernández1,Mauricio Moreno1,J.D. Prades1,Isabel Gràcia2,Carles Cané2,Sven Barth3,Albert Romano-Rodriguez1

Universitat de Barcelona (UB)1,CNM2,TUW3

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4:30 PM - EP08.03.09
New Perspective of Room-Temperature Gas Sensor Using Ionic Conduction Based SnO2 Nanorods

Young Geun Song1,2,Young-Seok Shim3,Jun Min Suh4,Ho Won Jang4,Byeong-Kwon Ju2,Chong-Yun Kang1,2

Korea Institute of Science and Technology1,Korea University2,Korea Advanced Institute of Science and Technology3,Seoul National University4

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4:45 PM - EP08.03.10
Doping Dependence of Electrical Characteristics of Zn-O-N Thin-Film Transistors

Hiroshi Tsuji1,Tatsuya Takei1,Mitsuru Nakata1,Masashi Miyakawa1,Yoshihide Fujisaki1

NHK Science & Technology Research Labs1

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2018-11-27   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mark Hollis, Massachusetts Institute of Technology - Lincoln Laboratory
David Moran, University of Glasgow
Rachael Myers-Ward, U.S. Naval Research Laboratory

Symposium Support

BAE Systems
Novel Crystal Technology, Inc.
EP08.04: Oxide Growth
Session Chairs
Tuesday AM, November 27, 2018
Hynes, Level 2, Room 209

9:00 AM - EP08.04.02
Epitaxial Lateral Overgrowth of α-Ga2O3 on Sapphire Substrates

Riena Jinno1,Nobuhiro Yoshimura1,Kentaro Kaneko1,Shizuo Fujita1

Kyoto University1

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9:15 AM - EP08.04.03
Low Pressure CVD Growth of N-Type Ga2O3 Thin Films Using Solid Ge Source

Praneeth Ranga1,Berardi Sensale-Rodriguez1,Michael Scarpulla1,Sriram Krishnamoorthy1

University of Utah1

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9:30 AM - EP08.04.04
High-Bias-Stability in Atomic-Layer-Deposition Al2O3 by Post-Deposition-Anneal on Wide- and Ultra-Wide-Bandgap Semiconductors

Kiyotaka Horikawa1,Atsushi Hiraiwa2,Satoshi Okubo1,Taisuke Kageura1,Hiroshi Kawarada1

Waseda University1,Nagoya University2

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9:45 AM -
BREAK


10:15 AM - *EP08.04.05
Molecular Beam Epitaxy of β-Ga2O3 and β-(AlxGa1-x)2O3

Elaheh Ahmadi1,Onur Koksaldi2,Feng Wu2,Umesh Mishra2,James Speck2

University of Michigan1,University of California, Santa Barbara2

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10:45 AM - EP08.04.06
High-Quality β-(AlxGa1-x)2O3/Ga2O3 (010) and Si-Doped β-(AlxGa1-x)2O3/Ga2O3 (010) Heterostructures Grown by Pulsed Laser Epitaxy

Shanee Pacley1,Shin Mou1,Adam Neal1,Kurt Eyink1,Krishnamurthy Mahalingam1,Lawrence Grazulius1,Eric Heller1,Brandon Howe1,Kelson Chabak1,Gregg Jessen1

Air Force Research Laboratory1

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11:00 AM - EP08.04.07
TEM-EELS Analysis of Ga2O3 /SiO2 and Ga2O3 /Al2O3 Interface Structures with Electron Beam Induced Crystallization of Al2O3 Gate Layer

Christopher Klingshirn1,Asanka Jayawardena2,Sarit Dhar2,Tsvetanka Zheleva3,Aivars Lelis3,Lourdes Salamanca-Riba1

University of Maryland1,Auburn University2,U.S. Army Research Laboratory3

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11:15 AM - EP08.04.08
Scanning Transmission Electron Microscopy of Gallium Oxide Materials and Interfaces

Jared Johnson1,Yuewei Zhang1,Md Rezaul Karim1,Hongping Zhao1,Siddharth Rajan1,Jinwoo Hwang1

Ohio State University1

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EP08.05: Oxide Physics
Session Chairs
Tuesday PM, November 27, 2018
Hynes, Level 2, Room 209

1:45 PM - *EP08.05.01
Topics in the Ab Initio Theory of Ga2O3, Mainly the ε Phase

Vincenzo Fiorentini1,Barbara Maccioni1,Roberta Farris1,Paola Alippi2

University di Cagliari1,CNR-ISM2

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2:15 PM - EP08.05.02
Characterizing the Influence of Impurities and Dopants on the Electrical Properties of Ga2O3 Through Hybrid Functional Calculations

Joel Varley1

Lawrence Livermore National Laboratory1

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2:30 PM - EP08.05.03
Dynamically Modeled Current Conduction in Atomic-Layer-Deposited Al2O3 on Wide- and Ultra-Wide-Bandgap Semiconductors

Atsushi Hiraiwa1,2,Kiyotaka Horikawa1,Satoshi Okubo1,Hiroshi Kawarada1

Waseda University1,Nagoya University2

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2:45 PM - EP08.05.04
How the Competition Between Compact and Diffuse States Can Determine Luminescence Properties in Wide Gap Nitrides and Oxides

John Buckeridge1,Zijuan Xie2,Richard Catlow1,Aron Walsh2,David Scanlon1,Alexey Sokol1

University College London1,Imperial College London2

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3:00 PM -
BREAK


3:30 PM - *EP08.05.05
Doping and Defects in β-Ga2O3

Klaus Irmscher1,Andreas Fiedler1,Zbigniew Galazka1,Günter Wagner1,Andreas Popp1,Robert Schewski1,Martin Albrecht1

Leibniz Institute for Crystal Growth1

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4:00 PM - EP08.05.06
Impact of Neutron Irradiation on Deep Levels in Ge-Doped (010) β-Ga2O3 Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Esmat Farzana1,Akhil Mauze2,James Speck2,Aaron Arehart1,Steven Ringel1

The Ohio State University1,University of California2

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4:15 PM - EP08.05.07
Interface Chemistry and Electrical Characteristics of 4H-SiC/SiO2 After Nitridation in Varying Atmospheres

Anna Regoutz1,Gregor Pobegen2,Thomas Aichinger3

Imperial College London1,Kompetenzzentrum für Automobil- und Industrieelektronik GmbH2,Infineon Technologies Austria AG3

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4:30 PM - EP08.05.08
High-Resolution Observation of Defects at SiO2/SiC Interfaces by Local Deep Level Transient Spectroscopy Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy

Yasuo Cho1,Yuji Yamagishi1

Tohoku University1

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4:45 PM - EP08.05.09
Quantum Sensing in 4H-SiC Power Devices

Mutsuko Hatano1,Tuan Hoang1,Takeshi Ohshima2,Makoto Nakajima1,Kosuke Mizuno1,Yuta Masuyama1,Takayuki Iwasaki1,Digh Hisamoto1

Tokyo Institute of Technology1,National Institutes for Quantum and Radiological Science and Technology2

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2018-11-28   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mark Hollis, Massachusetts Institute of Technology - Lincoln Laboratory
David Moran, University of Glasgow
Rachael Myers-Ward, U.S. Naval Research Laboratory

Symposium Support

BAE Systems
Novel Crystal Technology, Inc.
EP08.06/EP09.08: Joint Session I: Diamond Devices
Session Chairs
Etienne Gheeraert
Mark Hollis
Wednesday AM, November 28, 2018
Hynes, Level 2, Room 207

8:30 AM - *EP08.06.01/EP09.08.01
Recent Progresses in Deep Depletion Diamond MOSFET

Julien Pernot1,Cedric Masante1,Toan Thanh Pham1,2,Nicolas Rouger3,Gauthier Chicot1,2,Florin Udrea4,David Eon1,Etienne Gheeraert1,Daniel Araujo5

University Grenoble Alpes, CNRS, Grenoble INP, Institut Néel1,Univ. Grenoble Alpes, CNRS, Grenoble INP G2Elab, Grenoble, France2,Université de Toulouse; LAPLACE; CNRS; INPT; UPS3,The University of Cambridge4,Universidad de Cadiz5

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9:00 AM - *EP08.06.02/EP09.08.02
High Frequency, High Voltage and Vertical Diamond MOSFETs Using Two-Dimensional Hole Gas

Hiroshi Kawarada1,Nobutaka Oi1,Shoichiro Imanishi1,Masayuki Iwataki1,Atsushi Hiraiwa1

Waseda University1

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9:30 AM - EP08.06.03/EP09.08.03
Integration of V2O5 into H-Diamond MOSFETs for Enhanced Device Performance

David Moran1,David Macdonald1,Kevin Crawford1,Alexandre Tallaire2,Riadh Issaoui2

University of Glasgow1,Université Paris2

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9:45 AM - EP08.06.04/EP09.08.04
Diamond Surface Conduction FET RF Performance Correlated to Internal Charge Carrier Characteristics

Pankaj Shah1,James Weil1,Khamsouk Kingkeo1,Kevin Crawford1,Mahesh Neupane1,Anthony Birdwell1,Edward Viveiros1,Tony Ivanov1

Army Research Laboratory1

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10:00 AM -
BREAK


10:30 AM - *EP08.06.05/EP09.08.05
Diamond Power Electronic Devices—Schottky Diodes

Timothy Grotjohn1,2,John Albrecht1,Michael Becker2,Ayan Bhattacharya1,Ramon Diaz1,Aaron Hardy2,Timothy Hogan1,Matthias Muehle2,Robert Rechenberg2,Thomas Schuelke1,2,Steven Zajac1

Michigan State University1,Fraunhofer USA Center for Coatings and Diamond Technologies2

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11:00 AM - *EP08.06.06/EP09.08.06
Recent Progress in Diamond Field-Effect Transistor Technologies

Makoto Kasu1

Saga University1

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11:30 AM - EP08.06.07/EP09.08.07
Diamond:H/Transition Metal Oxides Transfer-Doping Efficiency and Transistors Performance

Moshe Tordjman1,2,Zongyou Yin3,1,youngtack Lee1,Alon Vardi1,Rafi Kalish2,Jesus del Alamo1

Massachusetts Institute of Technology1,Technion–Israel Institute of Technology2,The Australian National University3

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11:45 AM - EP08.06.08/EP09.08.08
3.8 W/mm Power Density at 1GHz for ALD-Al2O3 2DHG Diamond High Frequency MOSFETs

Shoichiro Imanishi1,Nobutaka Oi1,Satoshi Okubo1,Kiyotaka Horikawa1,Taisuke Kageura1,Atsushi Hiraiwa1,Hiroshi Kawarada1,2

Waseda University1,The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University2

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EP08.07/EP09.09: Joint Session II: Diamond Growth
Session Chairs
Philippe Bergonzo
Travis Wade
Wednesday PM, November 28, 2018
Hynes, Level 2, Room 207

1:30 PM - *EP08.07.01/EP09.09.01
Heteroepitaxial Diamond—Scaling of an Ultra-Wide-Bandgap Material to Wafer Dimensions

Matthias Schreck1,Stefan Gsell2,Martin Fischer2,Michael Mayr1,Björn-Christoph Gallheber1

University of Augsburg1,Augsburg Diamond Technology GmbH2

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2:00 PM - *EP08.07.02/EP09.09.02
Engineering Doped Single Crystal Diamond Films for Electronic and Quantum Applications

Jocelyn Achard1,Riadh Issaoui1,Alexandre Tallaire1,2,Ovidiu Brinza1,Vianney Mille1,Audrey Valentin1,André Tardieu1,Fabien Bénédic1

LSPM-CNRS1,IRCP - Ecole Nationale Supérieure de Chimie de Paris2

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2:30 PM -
BREAK


3:30 PM - *EP08.07.03/EP09.09.03
Heteroepitaxial Growth of Diamond on 3C-SiC/Si Substrates for Diamond Electronics

Mutsuko Hatano1,Takayuki Iwasaki1

Tokyo Institute of Technology1

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4:00 PM - *EP08.07.04/EP09.09.04
Thin CVD Diamond Films on AlGaN/GaN HEMT Structures

Ken Haenen1,2

Hasselt University1,IMEC vzw2

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4:30 PM - EP08.07.05/EP09.09.05
Gate Oxide Stability in Diamond Power Transistors

Etienne Gheeraert1,7,Loto Oluwasayo1,Matthieu Florentin1,Cedric Masante1,Nazareno Donato2,Marie-Laure Hicks3,Alex Pakpour-Tabrizi3,Richard Jackman3,Verena Zuerbig4,Philippe Godignon5,David Eon1,Julien Pernot1,Florin Udrea2,Daniel Araujo6

University of Grenoble-Alpes1,University of Cambridge2,University College London3,Fraunhofer Institute for Applied Solid State Physics4,Centro National de Microelectronica5,University of Cadix6,University of Tsukuba7

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4:45 PM - EP08.07.06/EP09.09.06
Diamond Power Electronics—Drift Layer Doping vs Injection Mode Transport

Robert Nemanich1,Raghuraj Hathwar1,Manpuneet Benipal2,Franz Koeck1,Mohamadali Malakoutian3,Srabanti Chowdhury3,Stephen Goodnick1

Arizona State University1,Advent Diamond2,University of California - Davis3

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2018-11-29   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mark Hollis, Massachusetts Institute of Technology - Lincoln Laboratory
David Moran, University of Glasgow
Rachael Myers-Ward, U.S. Naval Research Laboratory

Symposium Support

BAE Systems
Novel Crystal Technology, Inc.
EP08.08: III-Nitrides I
Session Chairs
Thursday AM, November 29, 2018
Hynes, Level 2, Room 209

8:15 AM - *EP08.08.01
High-Al AlxGa1-xN Channel Transistors Over Thick AlN/Sapphire Templates

Asif Khan1,Xuhong Hu1,Richard Floyd1,Abu Shahab1,Kamal Hussein1,Seongmo Hwang1,Fatema Asif1,Grigory Simin1,MVS Chandrashekhar1

University of South Carolina1

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8:45 AM - EP08.08.02
Enhancement-Mode, High Al-Content HEMTs Using Epitaxial Gate Oxides

Peter Dickens1,Brianna Klein1,Erica Douglass1,Andrew Armstrong1,Andrew Allerman1,Albert Baca1,Michael Brumbach1,Rebecca Chow1,Jon Ihlefeld2,Elizabeth Paisley1

Sandia National Labs1,University of Virginia2

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9:00 AM - EP08.08.03
Design and Modeling of III-Nitride HEMTs for Extremely Linear RF Operation

Kexin Li1,Shaloo Rakheja1

New York University1

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9:15 AM - EP08.08.04
Reverse-Bias-Induced Virtual Gate Phenomenon in N-Polar GaN HEMTs

Tetsuya Suemitsu1,Kiattiwut Prasertsuk1,2,Tomoyuki Tanikawa1,Takeshi Kimura1,Shigeyuki Kuboya1,Takashi Matsuoka1

Tohoku University1,National Electronic and Computer Technology Center2

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9:30 AM - EP08.08.05
Investigation on the Trap States at p-GaN MO(I)S Interface with Different Gate Dielectric Layers

Liwen Sang1

NIMS1

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9:45 AM - EP08.08.06
Hyperspectral Quantum Rod Thermal Imaging of GaN Electronic Devices

Bahar Oner1,James Pomeroy1,Serge Karboyan1,Martin Kuball1

University of Bristol1

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10:00 AM -
BREAK


10:30 AM - *EP08.08.07
Point Defect Management in Ultra-Wide Bandgap Materials

Pramod Reddy2,Zlatko Sitar1,2,Ramon Collazo1

North Carolina State University1,Adroit Materials2

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11:00 AM - EP08.08.08
Impact of Ge Doping on Growth Stress and Dislocation Microstructure in AlGaN

Anushka Bansal1,Joan Redwing1

The Pennsylvania State University1

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11:15 AM - EP08.08.09
Heteroepitaxy of Thick GaN on Si and Improvement of Electrical/Material Characteristics by Defect Annihilation

Atsunori Tanaka1,Woojin Choi1,Renjie Chen1,Ren Liu1,Shadi Dayeh1

Univ of California-San Diego1

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11:30 AM - EP08.08.10
Rehybridization Enhanced Incorporation of Boron at GaN and AlN (0001) Surfaces—A Novel Route to Grow High B Content Alloys

Liverios Lymperakis1,Jorg Neugebauer1

Max-Planck-Institut für Eisenforschung GmbH1

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