Meetings & Events

fall 1997 logo1997 MRS Fall Meeting & Exhibit

December 1 - 5, 1997 | Boston
Meeting Chairs:
 Harry A. Atwater, Peter F. Green, Dean W. Face, A. Lindsay Greer 
 

Symposium X—Frontiers of Materials Research Authoritative Reviews for Nonspecialists

Chairs

Harry Atwater, California Inst of Technology 
Dean Face, DuPont
Peter Green, Univ of Texas-Austin
A. Lindsay Greer, Cambridge Univ

* Invited paper

SESSION X1: 
Chairs: Harry A. Atwater, Dean W. Face, Peter F. Green and A. Lindsay Greer 
Tuesday Afternoon, December 2, 1997 
Salon E (M)

12:05 PM *X1.1 
RECENT ADVANCES IN PHOTORESIST MATERIALS. C. Grant Willson, University of Texas at Austin, Department of Chemical Engineering, Austin, TX.

Abstract Not Available

12:45 PM *X1.2 
BIOLOGICAL CERAMICS OR ALL YOU WANTED TO KNOW ABOUT SHELLS. A.H. Heuer, Case Western Reserve University, Department of Materials Science and Engineering, Cleveland, OH.

Abstract Not Available

SESSION X2: 
Chairs: Harry A. Atwater, Dean W. Face, Peter F. Green and A. Lindsay Greer 
Wednesday Afternoon, December 3, 1997 
Salon E (M)

12:05 PM *X2.1 
GENETICALLY ENGINEERED MATERIALS. David Tirrell, University of Massachusetts, Polymer Science and Engineering, Amherst, MA.

Abstract Not Available

12:45 PM *X2.2 
ELECTRON CONDUCTING REDOX HYDROGELS AND THEIR APPLICATIONS IN BIOSENSORS. Adam Heller, The University of Texas at Austin, Department of Chemical Engineering, Austin, TX.

Abstract Not Available

SESSION X3: 
Chairs: Harry A. Atwater, Dean W. Face, Peter F. Green and A. Lindsay Greer 
Thursday Afternoon, December 4, 1997 
Salon E (M)

12:05 PM *X3.1 
MRS MEDAL AWARD TALK PRESENTATION
III-NITRIDE LASERS AND OPTOELECTRONIC DEVICES. Shuji Nakamura, Nichia Chemical Industries, Ltd., Dept of Research & Development, Tokushima, JAPAN.

Recent research on III-V nitrides has paved the way for the realization of high-quality crystals of GaN, AlGaN and InGaN, and of p-type conduction in GaN and AlGaN The mechanism of the acceptor-compensation which prevented obtaining low-resistivity p-type GaN has been elucidated. These developments in wide-gap III-V nitride semiconductors have led to the commercial production of high-brightness blue/green light-emitting diodes (LEDs) and to the demonstration of room-temperature (RT) bluish-purple laser light emission in InGaN/GaN/AlGaN-based heterostructures under pulsed and continuous-wave (CW) operations. The lifetime of the InGaN multi-quantum-well (MQW) structure laser diodes (LDs) have been improved to 300 hours under RT-CW operation. However, further improvements of the LD characteristics, including the lifetime, are required to enable commercialization of short-wavelength LDs. Here, the present status of the RT-CW operated InGaN MQW structure LDs with a high output power of 50 mW, a high operating temperature of 170 K and a long lifetime of more than 300 hours. Also, the current developments and the future prospects of high-brightness blue/green InGaN qunatum well structure LEDs are described.

12:45 PM *X3.2 
SWITCHABLE MIRRORS FROM METAL HYDRIDES. Peter A. Duine, Philips Research Laboratory, Eindhoven, NETHERLANDS.

Abstract Not Available