Meetings & Events

1998 MRS Fall Meeting & Exhibit

November 30 - December 4, 1998 | Boston
Meeting Chairs:
 Clyde L. Briant, Eric H. Chason, Howard E. Katz, Yuh Shiohara

Symposium B—Growth Instabilities and Decomposition During Heteroepitaxy

-MRS-

Chairs

Jerrold Floro, Sandia National Laboratories 
Rachel Goldman, Univ of Michigan 
Jerry Tersoff, IBM T.J. Watson Research Ctr 
Peter Voorhees, Northwestern Univ

Symposium Support

  • American Xtal Technology
  • k-Space Associates, I
  • nc. SVT Associates, I
  • nc. TLI Enterprises, Inc.

 Invited paper

SESSION B1: COHERENT ISLAND EVOLUTION I 
Chair: Peter W. Voorhees 
Wednesday Morning, December 2, 1998 
Provincetown/Orleans (M)

8:30 AM *B1.1 
INSTABILITY AND METASTABILITY DURING STRAINED LAYER EPITAXY. D.E. Jesson, G. Chen, K.M. Chen and S.J. Pennycook, Solid State Division, Oak Ridge National Laboatory, Oak Ridge, TN. 

9:00 AM *B1.2 
INTERACTION OF STRESS AND MORPHOLOGY IN SiGe HETEROEPITAXY. E. Chason, J.A. Floro, M.B. Sinclair, R.Q. Hwang, Sandia National Laboratories, Albuquerque, NM; L.B. Freund, Brown University, Providence, RI; G. Lucadomo, Lehigh University, Lehigh, PA. 

9:30 AM B1.3 
SELF-ORGANIZED ORDERING OF Si1-xGex NANOSCALE ISLANDS STUDIED BY GRAZING INCIDENCE SMALL ANGLE X-RAY SCATTERING. Martin Schmidbauer, Thomas Wiebach, Helmut Raidt, Michael Hanke, Rolf Köhler, Arbeitsgruppe Röntgenbeugung, Institut für Physik, Humboldt-Universität zu Berlin, Berlin, GERMANY; Herbert Wawra, Institut für Kristallzüchtung, Berlin, GERMANY. 

9:45 AM BREAK 

10:15 AM *B1.4 
CHEMICAL THERMODYNAMICS OF THE SIZE AND SHAPE EVOLUTION OF STRAINED Ge NANOCRYSTALS GROWN ON Si(001). R. Stanley Williams, Gilberto Medeiros-Ribeiro, Theodore I. Kamins and Douglas A. A. Ohlberg, Hewlett-Packard Laboratories, Palo Alto, CA. 

10:45 AM B1.5 
DEVELOPMENT OF SiGe/Si HETEROSTRUCTURES: SELFORDERING AND GROWTH DYNAMICS. Silke Christiansen, Silke Christiansen, M.Albrecht, W.Dorsch, H.P.Strunk, Institut fuer Werkstoffwissenschaften, Mikrocharakterisierung Universitaet Erlangen Nuernberg, Erlangen, F.R.G.; H.Wawra, G.Wagner, Institut fuer Kristallzuechtung Berlin, Berlin, GERMANY. 

11:00 AM *B1.6 
ISLAND FORMATION IN LATTICE-MISMATCHED SYSTEMS: Ge/Si(100) AND CoSi2/Si(111). F.M. Ross, IBM T.J. Watson Research Research Center, Yorktown Heights, NY. 

11:30 AM B1.7 
SHAPE TRANSITION IN GROWTH OF STRAINED ISLANDS. István Daruka, Univ. of Notre Dame, Dept of Physics, Notre Dame, IN; Jerry Tersoff, IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY; Albert-László Barabási, Univ. of Notre Dame, Dept of Physics, Notre Dame, IN. 

11:45 AM B1.8 
HETEROEPITAXIAL STRAIN STABILIZATION OF THE SI$\{105\}$ P(2$\times$1) RECONSTRUCTION*. J.S. Sullivan, P. Sutter, and M.G. Lagally, University of Wisconsin-Madison, Dept of Materials Science and Engineering, Madison, WI. 

SESSION B2: COHERENT ISLAND EVOLUTION II 
Chair: Brian J. Spencer 
Wednesday Afternoon, December 2, 1998 
Provincetown/Orleans (M)

1:30 PM *B2.1 
ISLAND SHAPE INSTABILITIES AND SURFACTANT-LIKE EFFECTS IN THE GROWTH OF InGaAs/GaAs QUANTUM DOTS. R. Leon, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA; C. Lobo, Research School of Physical Sciences and Engineering, Australian National University, Canberra, AUSTRALIA; J. Zou and D.J.H. Cockayne, Australian Key Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, AUSTRALIA. 

2:00 PM B2.2 
TEMPERATURE AND DEPOSITION RATE DEPENDENCE OF MORPHOLOGICAL INSTABILITY IN INDIUM ARSENIDE/GALLIUM ANTIMONIDE HETEROSTRUCTURES. M.E. Twigg, B.R. Bennett, and R. Magno, Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC. 

2:15 PM B2.3 
STRUCTURAL EVOLUTION AND THE ROLE OF DISLOCATIONS IN INGAAS ISLAND FORMATION ON (110), (111)B AND (311)B GAAS SURFACES. C. Lobo, Dept of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, AUSTRALIA; R. Leon, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA; X. Z. Liao, Australian Key Centre for Microscopy and Microanalysis, University of Sydney, Sydney AUSTRALIA; M. A. Stevens Kalceff, M. Toth, Microstructural Analysis Unit, University of Technology, Sydney AUSTRALIA; M. Gal, School of Physics, University of New South Wales, Sydney AUSTRALIA. 

2:30 PM B2.4 
EQUILIBRIUM SHAPES AND ENERGIES OF COHERENT STRAINED INP ISLANDS. Quincy K.K. Liu, Bereich Theoretische Physik, Hahn-Meitner-Institut, Berlin-Wannsee, GERMANY; N. Moll, M. Scheffler, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin-Dahlem, GERMANY; E. Pehlke, Physik-Department T30, Technische Universität München, Garching, GERMANY. 

2:45 PM B2.5 
SHAPE CHANGE OF InAs SELF-ASSEMBLED QUANTUM DOTS INDUCED BY AS/P EXCHANGE REACTION. Sukho Yoon, Youngboo Moon, Tae-Wan Lee, Heedon Hwang, Euijoon Yoon, Seoul National University, School of Materials Science and Engineering, Seoul, KOREA; Young Dong Kim, Kyung Hee University, Department of Physics, Seoul, KOREA. 

3:00 PM BREAK 

3:30 PM *B2.6 
SELF-ORDERING IN SINGLE-SHEET AND MULTI-SHEET ARRAYS OF STRAINED ISLANDS. Dieter Bimberg, Vitaliy Shchukin, Institute for Solid State Physics, Technical University of Berlin, Berlin, GERMANY. 

4:00 PM B2.7 
NEARLY PERFECT THREE DIMENSIONAL ORDERING OF SELF-ASSEMBLED PbSe QUANTUM DOTS IN STRAIN-SYMMETRIZED PbSe/PbEuTe QUANTUM DOT SUPERLATTICES GROWN BY MOLECULAR BEAM EPITAXY. G. Springholz, M. Pinczolits, G. Bauer and V. Holy, Institut fuer Halbleiterphysik, University of Linz, Linz, AUSTRIA. 

4:15 PM B2.8 
DECOMPOSITION OF TWO-DIMENSIONAL GALLIUM ARSENIDE HETEROEPITAXIAL FILMS ON SILICON (001) INTO THREE- DIMENSIONAL DISCONTINUOUS VOLMER-WEBER ISLANDS MONITORED BY IN-SITU AUGER ELECTRON SPECTROSCOPY. Patrick Taylor*, William A. Jesser, University of Virginia, Dept. of Materials Science and Engineering, Charlottesville, VA; Michael Martinka, John H. Dinan, US Army CECOM-Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA; William Clark III, US Army Research Laboratory, Sensors and Electronic Device Directorate, Adelphi, MD *now with M.I.T.-Lincoln Laboratory, Lexington, MA. 

4:30 PM B2.9 
ORIGINS OF DEFECTS IN SELF-ASSEMBLED GaP ISLANDS GROWN ON (001) AND (111) Si. V. Narayanan1, N. Sukidi2, K.J. Bachmann2, S.Mahajan11Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ; 2Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC. 

4:45 PM B2.10 
NANOMETER-SCALE STUDIES OF VERTICAL ORGANIZATION AND EVOLUTION OF STACKED SELF-ASSEMBLED InAs/GaAs QUANTUM DOTS. B. Lita and R.S. Goldman, Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI; J. Phillips and P.K. Bhattacharya, Solid State Electronics Laboratory, The University of Michigan, Ann Arbor, MI. 

SESSION B3: POSTER SESSION: 
GROWTH INSTABILITIES AND DECOMPOSITON DURING HETEROEPITAXY 
Chair: Peter W. Voorhees 
Wednesday Evening, December 2, 1998 
8:00 P.M. 
America Ballroom (W)

B3.1 
GROWTH CHARACTERISTICS OF HETEROEPITAXIAL SiGe LAYERS GROWN ON Si (111) BY LIQUID PHASE EPITAXY. Thomas Fueller, Juergen Zipprich, Florian Banhart, Max-Planck-Institut fuer Metallforschung, Stuttgart, GERMANY. 

B3.2 
THE STRAIN FIELD IN Si1-xGex ISLANDS AS STUDIED BY X-RAY RECIPROCAL SPACE MAPPING AND FINITE ELEMENT METHOD CALCULATIONS. Thomas Wiebach, Martin Schmidbauer, Helmut Raidt, Michael Hanke, Rolf Köhler, Arbeitsgruppe Röntgenbeugung, Institut für Physik, Humboldt-Universität zu Berlin, Berlin, GERMANY; Herbert Wawra, Institut für Kristallzüchtung, Berlin, GERMANY. 

B3.3 
A COMPARISON OF In(.267)Ga(.733)As SURFACE MORPHOLOGY IN COMPRESSIVE AND TENSILE STRAIN. Nehal S. Chokshi, Joanna Mirecki-Millunchick, University of Michigan, Ann Arbor, MI. 

B3.4 
ANISOTROPIC STABILITY ANALYSIS OF SURFACE UNDULATIONS OF STRAINED LATTICE-MISMATCHED LAYERS. Yoshiyuki Obayashi, Kazuhito Shintani, Univ of Electro-Communications, Dept of Mechanical and Control Engineering, Tokyo, JAPAN. 

B3.5 
COMPARISON BETWEEN HOMOGENEOUSLY GROWN AND TEMPERATURE-GRADED InAlAs BUFFERS IN THE RANGE 250$^{\circ}$C-560$^{\circ}$C: EFFECTS ON SURFACE MORPHOLOGY AND LAYER STABILITY. J. Arbiol, F. Peiró, A. Cornet, J.R. Morante, Dept of Electronics, Univ of Barcelona, Barcelona, SPAIN; A. Georgakilas, M. Kayambaki, Microelectronics Research Group IESL/FORTH and Physics Dept, Univ of Crete, Heraklion, Crete, GREECE. 

B3.6 
TRANSITIONS IN SURFACE MORPHOLOGY DURING (001)INSB MOLECULAR BEAM EPITAXY. A.B.J. Smout, A.D. Johnson, A.J. Pidduck, R. Jefferies, J.W. Cairns and T. Martin, Electronic and Optical Materials Centre (EOMC), DERA, Malvern, UK; M.S.M. Lamb, Wafer Technology Ltd., Tongwell, UK. 

B3.7 
SELF-ASSEMBLED FORMATION OF ZnCdSe QUANTUM DOTS ON ATOMICALLY SMOOTH ZnSe SURFACES BY MOLECULAR BEAM EPITAXY. Kenta Arai, Takashi Hanada, Takafumi Yao, Inst. for Materials Research, Tohoku Univ., Sendai, JAPAN; Akihiro Ohtake, Joint Res. Cen. for Atom Tech.-ATP, Tsukuba, JAPAN; Tetsuji Yasuda, Joint Res. Cen. for Atom Tech.-NAIR, Tsukuba, JAPAN. 

B3.8 
EQUILIBRIUM PHASE DIAGRAMS FOR DISLOCATION FREE SELF-ASSEMBLED QUANTUM DOTS. István Daruka, Albert-László Barabási, Univ of Notre Dame, Dept of Physics, Notre Dame, IN. 

B3.9 
NANOMETER-SCALE IMAGING OF STRAIN IN Ge ISLAND ON Si(001) SURFACE. Takashi Ide, NEC Corp, Device Analysis and Evaluation Technology Center, Kawasaki, JAPAN; Akira Sakai, NEC Corp, Fundamental Research Labratories, Tsukuba, JAPAN; Keiji Shimizu, NEC Corp, Device Analysis and Evaluation Technology Center, Kawasaki, JAPAN. 

B3.10 
MORPHOLOGICAL INSTABILITY OF Si1-xGex/Si MULTIPLE QUANTUM WELLS GROWN IN A HYDROGEN ATMOSPHERE: A PHOTOLUMINESCENCE STUDY. Gregory A. Balchin and Paul M. Amirtharaj, Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD; Conrad Silvestre, Philip Thompson and Mark Twigg, Naval Research Laboratory, Washington, DC. 

B3.11 
EXPONENTIAL GROWTH KINETICS OF GaN ON SAPPHIRE(0001). Arthur R. Woll, Joel D. Brock, Dept of Applied & Engineering Physics, Cornell Univ, Ithaca, NY; Randy L. Headrick, Stefan Kycia, Cornell High Energy Synchrotron Source, Cornell Univ, Ithaca, NY. 

B3.12 
NUCLEATION AND EPITAXIAL GROWTH OF Mo (110) ON (11$\bar{2}$0) SAPPHIRE SUBSTRATES. Lei Wu, and Frank Tsui, University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC. 

B3.13 
THE FORMATION OF 2D-SiC IN Si1-xCx/Si. Yinshu Wang, Jinmin Li, Fangfang Zhang, Lanying Lin Institute of Semiconductors, Chinese Academy of Sciences, Beijing, CHINA. 

B3.14 
ATOMIC FORCE MICROSCOPY EXAMINATION OF THE EVOLUTION OF THE SURFACE MORPHOLOGY OF Bi4Ti3O12 GROWN BY MOLECULAR BEAM EPITAXY. G.W. Brown, M.E. Hawley, Materials Science $\&$Technology Division, Los Alamos National Laboratory, Los Alamos, NM; C.D. Theis, J. Yeh, and D.G. Schlom, Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA. 

B3.15 
Abstract Withdrawn. 

B3.16 
GROWTH AND SELF-ASSEMBLY OF THREE DIMENSIONAL SILICON-GERMANIUM ISLANDS VIA STRESS INDUCED SURFACE EVOLUTION. Cengiz S. Ozkan, Applied Micro Circuits Corporation, San Diego, CA. 

SESSION B4: THE 2D-3D TRANSITION 
Chair: Frances M. Ross 
Thursday Morning, December 3, 1998 
Provincetown/Orleans (M)

8:30 AM *B4.1 
MEAN-FIELD THEORY OF COHERENT ISLAND HETEROEPITAXY. Andrew Zangwill, Georgia Institute of Technology, Atlanta, GA. 

9:00 AM B4.2 
ELASTIC INTERACTION OF ADATOMS AND STEPS. Demitris Kouris, Alonso Peralta, Karl Sieradzki, Dept of Mechanical and Aerospace Engineering, Arizona State University, Tempe, AZ. 

9:15 AM B4.3 
AN INSTABILITY STUDY OF STRAINED THIN FILMS VIA THE DISCRETE ATOM METHOD. J.K. Lee and D.C. Shin, Department of Metallurgical and Materials Engineering, Michigan Technological University, Houghton, MI. 

9:30 AM B4.4 
A NEW KINETICALLY DRIVEN GROWTH INSTABILITY IN STRESSED SOLIDS. W. Barvosa-Carter, Naval Research Laboratory, Washington, DC; M.J. Aziz, Harvard University, Cambridge, MA; T. Kaplan and L.J. Gray, Oak Ridge National Laboratory, Oak Ridge, TN. 

9:45 AM BREAK 

10:15 AM B4.5 
NUMERICAL SIMULATIONS OF ISLAND FORMATION IN A COHERENT STRAINED EPITAXIAL FILM. Y-W. Zhang, Institute for Materials Research and Engineering, SINGAPORE; A.F. Bower, Division of Engineering, Brown University, Providence, RI. 

10:30 AM B4.6 
STABILITY, TOPOLOGY, AND COARSENING OF 2D ISLANDS UNDER STRESS. Adam Li, Feng Liu and M.G. Lagally, Dept. of MS&E, University of Wisconsin-Madison, WI. 

10:45 AM B4.7 
THE COMBINED EFFECTS OF STRESS AND DIFFUSION ON THE GROWTH OF STRAINED EPITAXIAL FILMS. R. V. Kukta and K. Bhattacharya, California Inst of Technology, Div of Engineering and Applied Sciences, Pasadena, CA. 

11:00 AM B4.8 
NUMERICAL SIMULATIONS OF THE MORPHOLOGICAL EVOLUTION OF THREE-DIMENSIONAL ISLANDS DURING HETEROEPITAXY. Cheng-hsin Chiu, Institute of Materials Research and Engineering, National University of Singapore, SINGAPORE. 

11:15 AM B4.9 
SURFACE EVOLUTION AND GROWTH INSTABILITY DURING CVD OF THIN FILMS. M. E. Jabbour and K. Bhattacharya, California Inst of Technology, Div of Engineering and Applied Sciences, Pasadena, CA. 

11:30 AM B4.10 
STEP BUNCHING IN Si1-xGex LAYERS WITH MISMATCH $\le$1$\%$. C. Schelling, J. Stangl, G. Bauer, and F. Schäffler, Johannes Kepler Universität, Abt. f. Halbleiterphysik, Linz, AUSTRIA. 

11:45 AM B4.11 
STRUCTURAL CHARACTERIZATION OF HIGHLY REGULAR STEP BUNCHES ON (113) SiGe/Si MULTILAYERS. J. Stangl, A. A. Darhuber, G. Bauer, Kepler University, Linz, AUSTRIA; J. Zhu, K. Brunner, G. Abstreiter, TU Munich, GERMANY; P. MikulIk, J. Grim, V. Holy, Masaryk University, Brno, CZECH REPUBLIC. 

SESSION B5: COMPOSITION MODULATION 
Chair: Rachel S. Goldman 
Thursday Afternoon, December 3, 1998 
Provincetown/Orleans (M)

1:30 PM *B5.1 
ATOMIC ORDERING AND THE SURFACE MORPHOLOGY OF THIN FILMS. François Léonard1,2 and Rashmi C. Desai21IBM T.J. Watson Research Center, Yorktown Heights, NY, 2 Univ. of Toronto, Dept. of Physics, Toronto, Ontario, CANADA. 

2:00 PM B5.2 
SELF-ORGANIZED SURFACE ROUGHENING AND ALLOY DECOMPOSITION IN EPITAXIAL GROWTH OF STRAINED MATERIALS. P. Venezuela1, J. Tersoff2, Feng Liu1, and M. G. Lagally11University of Wisconsin, Madison; 2IBM Thomas J. Watson Research Center. 

2:15 PM B5.3 
ELASTIC ANALYSIS OF HETEROEPITAXIAL GROWTH OF MULTILAYERS: GROWTH INSTABILITIES AND LATERAL COMPOSITION MODULATION. L. E. Shilkrot, D. J. Srolovitz, Dept. of Materials Science & Engineering, University of Michigan, Ann Arbor, MI; J. Tersoff, IBM T.J. Watson Research Center, Yorktown Heights, NY. 

2:30 PM *B5.4 
MORPHOLOGICAL INSTABILITY IN COHERENTLY STRAINED ALLOY FILMS. B.J. Spencer, Dept of Mathematics, SUNY at Buffalo; P.W. Voorhees, Dept of Materials Science and Engineering, Northwestern Univ; J. Tersoff, IBM, T.J. Watson Research Center, Yorktown Heights, NY. 

3:00 PM BREAK 

3:30 PM *B5.5 
LATERAL COMPOSITION MODULATION IN SHORT PERIOD SUPERLATTICES. J. Mirecki Millunchick1, R.D. Twesten2, S.R. Lee, J.L. Reno, D.M. Follstaedt, E.D. Jones, Sandia National Laboratory, Albuquerque NM; S.P. Ahrenkiel, A.G. Norman, A. Mascarenhas, National Renewable Energy Laboratory, Golden CO. 1current address: Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI. 2current address: Center of Microanalysis of Materials, University of Illinois, Urbana, IL. 

4:00 PM B5.6 
PHOTOLUMINESCENCE STUDIES OF LATERAL COMPOSITION MODULATED SHORT-PERIOD InAs/AlAs SUPERLATTICES. E.D. Jones, D.M. Follstaedt, S.R. Lee, and J.L. Reno, Sandia National Laboratories, Albuquerque, NM, J. Mirecki Millunchick, University of Michigan, Ann Arbor, MI, S.P. Ahrenkiel, A. Mascarenhas, A.G. Norman, and Y. Zhang, NREL, Golden, CO, R.D. Twesten, University of Illinois, Urbana, IL. 

4:15 PM B5.7 
THE INFLUENCE OF SURFACE STRESS ON THE NATURE OF SELF-ORGANIZED LATERAL COMPOSITION MODULATIONS IN (AlAs)m(InAs)n SHORT-PERIOD SUPERLATTICES. Andrew G. Norman, S. Phillip Ahrenkiel, Helio Moutinho, Mowafak M. Al-Jassim, Angelo Mascarenhas, National Renewable Energy Laboratory, Golden, CO; Stephen R. Lee, David M. Follstaedt, John L. Reno, Eric D. Jones, Sandia National Laboratories, Albuquerque, NM; Joanna Mirecki Millunchick, Univ of Michigan, Dept of Materials Science and Engineering, Ann Arbor, MI; Ray D. Twesten, Univ of Illinois, Center for Microanalysis of Materials, Urbana, IL. 

SESSION B6: SEGREGATION AND DECOMPOSITION 
Chair: Jerrold A. Floro 
Friday Morning, December 4, 1998 
Provincetown/Orleans (M)

8:30 AM B6.1 
ENHANCED NUCLEATION AND COMPOSITIONAL ENRICHMENT OF QUANTUM DOTS ON A STRAINED ALLOY. J. Tersoff, IBM T.J. Watson Center, Yorktown Heights NY. 

8:45 AM B6.2 
COHERENT Sn-RICH SnxSi1-x QUANTUM DOT FORMATION VIA PHASE SEPARATION FROM HOMOGENEOUS ULTRATHIN SnxSi1-x/Si EPITAXIAL ALLOY FILMS. Kyu Sung Min, Nicholas J. Choly and Harry A. Atwater, Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA. 

9:00 AM B6.3 
FORMATION OF NANOSCALE TRENCHES AND WIRES AS A PATHWAY TO PHASE-SEPARATION IN STRAINED EPITAXIAL GeSn ALLOYS. Jie Zhang, X. Deng and M. Krishnamurthy, Department of Metallurgical and Materials Engineering, Michigan Technological University, Houghton, MI. 

9:15 AM B6.4 
Ge SEGREGATION AND FACET FORMATION DURING THE GROWTH OF METASTABLE (GaAs)1-x(Ge2)x ALLOY LAYERS BY METAL ORGANIC VAPOR PHASE EPITAXY. Andrew G. Norman, Jerry M. Olson, John F. Geisz, Helio Moutinho, Mowafak M. Al-Jassim, National Renewable Energy Laboratory, Golden, CO; Stanley M. Vernon, Spire Corporation, Bedford, MA. 

9:30 AM B6.5 
ATOMIC SCALE ANALYSIS OF THE INDIUM DISTRIBUTION IN InGaAs/GaAs(001) HETEROSTRUCTURES: SEGREGATION, DESORPTION AND THE EFFECT OF GROWTH INTERRUPTIONS. A. Rosenauer, F. Fischer, W. Oberst, D. Gerthsen, Laboratorium für Elektronenmikroskopie, Universität (TH) Karlsruhe, GERMANY; A. Förster, Institut für Schicht-und Ionentechnik, Forschungszentrum Jülich, GERMANY. 

9:45 AM BREAK 

10:15 AM B6.6 
Abstract Withdrawn. 

10:30 AM B6.7 
Ge SEGREGATION MECHANISMS DURING Si/Ge MULTI-LAYER GROWTH. Koji Sumitomo, Yoshihiro Kobayashi, Toshio Ogino, NTT Basic Research Labs, Atsugi, Kanagawa, JAPAN; Tomonori Ito, NTT System Electronics Labs, Atsugi, Kanagawa, JAPAN. 

10:45 AM B6.8 
EFFECTS OF ANNEALING ON THE SELF-ORGANIZED INAS QUANTUM ISLANDS ON GaAs(100). Q.W. Mo, T.W. Fan, Q. Gong, J. Wu, Z.G. Wang, Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P.R.CHINA.