Meetings & Events

1998 MRS Fall Meeting & Exhibit

November 30 - December 4, 1998 | Boston
Meeting Chairs:
 Clyde L. Briant, Eric H. Chason, Howard E. Katz, Yuh Shiohara

Symposium C—Surface and Interface Structure and Dynamics

-MRS-

Chairs

Theodore Einstein, Univ of Maryland 
E. Plummer, Univ of Tennessee 
Andreas Schmid, Sandia National Laboratories

Symposium Support

  • Blake Industries, Inc.
  • ELMITEC GmbH
  • Omicron Associates
  • Thermionics Laboratory, Inc.

* Invited paper

SESSION C1: DYNAMICS OF ADATOMS, VACANCIES AND CLUSTERS I 
Chair: Jim Evans 
Monday Morning, November 30, 1998 
Salon C/D (M)

8:30 AM C1.1 
THEORETICAL INVESTIGATION OF THE EFFECTS OF HYDROGEN TERMINATION OF THE SINGLE-HEIGHT STEPPED Si(100) SURFACE. Jun Nara, Taizo Sasaki, Takahisa Ohno, National Research Institute for Metals, Tsukuba, JAPAN. 

8:45 AM C1.2 
TOWARDS A FIRST-PRINCIPLES THEORY OF SURFACE THERMODYNAMICS. C. Stampfl1, H.J. Kreuzer2, H. Pfnür3, and M. Scheffler11Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, GERMANY; 2Department of Physics, Dalhousie University, Halifax, Nova Scotia, CANADA; 3Institut für Festkörperphysik, Universität Hannover, Hannover, GERMANY. 

9:00 AM C1.3 
PERSISTENT LAYER-BY-LAYER SPUTTERING OF Au(111). M.V. Ramana Murty, A. Judy, C. Butler, B.H. Cooper, Department of Physics, Cornell University, Ithaca, NY; A.R. Woll, J.D. Brock, School and Applied and Engineering Physics, Cornell University, Ithaca, NY; and R.L. Headrick, Cornell High Energy Synchrotron Source, Ithaca, NY. 

9:15 AM C1.4 
ADATOM ISLAND NUCLEATION AND ROUGHENING KINTETICS DURING LOW ENERGY ION BOMBARDMENT. H.L. Chan and E.I. Altman, Department of Chemical Engineering, Yale University, New Haven, CT. 

9:30 AM C1.5 
DEFECT ADSORPTION ON OXIDE SURFACES AND DEPOSITED METAL AGGREGATES. H. Kuhlenbeck, M. Baeumer, J. Libuda, H.-J. Freund, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, GERMANY. 

9:45 AM BREAK 

10:15 AM *C1.6 
DYNAMICS OF SURFACE DIFFUSION AND OF ADSORBATE-ADSORBATE INTERACTIONS ON METAL SURFACES STUDIED BY STM. Flemming Besenbacher, Institute of Physics and Astronomy and Center for Atomic-scale Materials Physics, University of Aarhus, Aarhus, DENMARK. 

10:45 AM *C1.7 
ETCHING OF THE Si(001) SURFACE WITH MOLECULAR OXYGEN. James B. Hannon, Surface and Interface Science Department, Sandia National Laboratories, Albuquerque, NM. 

11:15 AM *C1.8 
ORDERING AT SURFACES STUDIED BY SCANNING TUNNELING MICROSCOPY. R. Schuster, S. Renisch, X.H. Xia, J. Wintterlin, and G. Ertl; Fritz-Haber-Institut der Max-Planck-Gesellschaft; Berlin, GERMANY. 

11:45 AM C1.9 
IN SITU OBSERVATION OF ATOMIC STEP MOTION AND INTERACTIONS DURING THE SUBLIMATION OF Si(111). P. Finnieand Y. Homma, NTT Basic Research Laboratories, Atsugi, JAPAN. 

SESSION C2: DYNAMICS AT STEP EDGES 
Chair: Daniel Kandel 
Monday Afternoon, November 30, 1998 
Salon C/D (M)

1:30 PM *C2.1 
FORMATION AND RELAXATION OF TWO-DIMENSIONAL METAL ISLANDS ON SURFACES. Conrad Stoldt, Antonio Cadilhe, Cynthia Jenks, Patricia Thiel, Jim Evans, Iowa State University, Ames, IA; Maria Bartelt, Sandia National Laboratories, Livermore, CA. 

2:00 PM C2.2 
EDGE BARRIERS AND SMOOTHENING ON Cu(100) AT ROOM TEMPERATURE 1John F. Wendelken, Oak Ridge National Laboratory, Oak Ridge, TN; Jiang-Kai Zuo, Southwest Missouri State University, Springfield, MO; Woei Wu Pai, Oak Ridge National Laboratory and The University of Tennessee, Knoxville, TN. 

2:15 PM C2.3 
SELF-CONSISTENT MODEL FOR HOMOEPITAXIAL GROWTH KINETICS IN THE PRESENCE OF AN ISLAND EDGE BARRIER. Vladimir Trofimov, Vladimir Mokerov, Alexander Shumyankov, Institute of Radio Engineering & Electronics of RAS, Moscow, RUSSIA. 

2:30 PM C2.4 
INSTABILITY IN MOLECULAR BEAM EPITAXY DUE TO THE ISLAND CORNER DIFFUSION BARRIER. M.V. Ramana Murty and B.H. Cooper, Department of Physics and Cornell Center for Materials Research, Cornell University, Ithaca, NY. 

2:45 PM BREAK 

3:15 PM *C2.5 
ISLAND DECAY ON AN ANISOTROPIC SURFACE. Karina Morgenstern1,2, Erik Længsgaard1, Flemming Besenbacher11Institute for Physics and Astronomy and Center for Atomic-Scale Materials Physics, University of Aarhus, Aarhus, DENMARK, 2Institute of Experimental Physics, University of Lausanne, Lausanne, SWITZERLAND. 

3:45 PM C2.6 
ORDERING FORCES OF ISLANDS AND DISLOCATION NETWORKS IN STRAINED FILMS. Karsten Pohl, Juan de la Figuera, Maria C. Bartelt, Norman C. Bartelt, Jan Hrbek*, and Robert Q. Hwang, Sandia National Laboratories, Livermore, CA. 

4:00 PM C2.7 
ADVANCES IN STUDYING TERRACE-WIDTH DISTRIBUTIONS ON VICINAL SURFACES: IMPROVED APPROXIMATIONS AND EXACT RESULTS FROM RANDOM-MATRIX THEORY. T.L. Einstein, O. Pierre-Louis, Physics Department, University of Maryland-College Park,College Park, MD. 

4:15 PM *C2.8 
ACCELERATED COARSENING ON METAL SURFACES DUE TO THE DECAY OF MULTILAYER ISLANDS VIA ATOMIC LANDSLIDES. Margret Giesen, Institut fuer Grenzflaechenforschung und Vakuumphysik, Forschungszentrum Juelich, Juelich, GERMANY. 

4:45 PM C2.9 
STRUCTURE OF ARSENIC-PASSIVATED GERMANIUM (100). Shupan Gan, Lian Li, Michael J. Begarney, Byung Han, and Robert F. Hicks, University of California, Dept of Chemical Engineering, Los Angeles, CA. 

SESSION C3: POSTER SESSION: 
SEMICONDUCTORS 
Monday Evening, November 30, 1998 
8:00 P.M. 
America Ballroom (W)

C3.1 
TEMPERATURE AND SURFACTANT EFFECTS ON THE GROWTH OF ULTRATHIN FILMS ON SEMICONDUCTOR SUBSTRATES. T. Chassé, S. Schòmann, A. Preobrajenski, K. Gebhardt, Univ Leipzig, Wilhelm-Ostwald-Inst of Phys and Theor Chem, Leipzig, GERMANY; K. Horn, Fritz-Haber-Inst of the MPG, Berlin, GERMANY. 

C3.2 
AN AB INITIO STUDY OF Ge AD-DIMERS ON THE Si(100) SURFACE. Antônio J.R. da Silva, A. Janotti, A. Fazzio, Instituto de Física da Universidade de São Paulo, São Paulo, BRAZIL. 

C3.3 
MODELLING OF GERMANIUM SEGREGATION WITH GROWTH RATE DEPENDENCE IN GS-MBE. Nicholas James Woods, Eng Soon Tok and Jing Zhang, IRC for Semiconductor Materials and Dept of Physics, Blackett Laboratory, Imperial College, London, UNITED KINGDOM. 

C3.4 
INTERNAL INTERFACES IN COMPOUND SEMICONDUCTOR THIN FILMS. Dov Cohen, D.L. Medlin,* and C. Barry Carter, University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN. *Sandia National Laboratories, Livermore, CA. 

C3.5 
DFT BASED TIGHT-BINDING MOLECULAR DYNAMICS STUDIES OF SI(100):A-SIOX INTERFACE STRUCTURES. Zoltan Hajnal, Alexander Sieck, Thomas Frauenheim, Theoretical Physics, University of Paderborn, GERMANY; Thomas K–hler, Theoretical Physics, Technical University of Chemnitz, GERMANY. 

C3.6 
NANOMETER-SCALE STUDIES OF INTERDIFFUSION IN NON-STOICHIOMETRIC AlAs/GaAs SUPERLATTICES. B. Lita, Smita Ghaisas, and R.S. Goldman, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI; M.R. Melloch, School of Electrical and Computer Engineering, Purdue University, IN. 

C3.7 
MOLECULAR DYNAMICS SIMULATION OF GAS PERMEATION THROUGH THE MICRO POROUS MEMBRANE. Koichi Mizukami, Yasunori Kobayashi, Yasunori Oumi, Kazuo Teraishi, Momoji Kubo, S. Salai Cheettu Ammal, Akira Miyamoto, Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, Sendai, JAPAN. 

C3.8 
KINETICS OF STRAIN RELAXATION THROUGH MISFIT DISLOCATION FORMATION IN LAYER-BY-LAYER SEMICONDUCTOR HETEROEPITAXY. Dimitrios Maroudas, Luis A. Zepeda-Ruiz, Brett Z. Nosho, Rodney I. Pelzel, and W. Henry Weinberg, Department of Chemical Engineering, University of California, Santa Barbara, CA. 

C3.9 
MISFIT DISLOCATION NUCLEATION IN THIN FILMS. Q. Yuan, R. Hull, Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA; J.C. Bean, J. Xu, E. Towe, Department of Electrical Engineering, University of Virginia, Charlottesville, VA. 

C3.10 
FIRST-PRINCIPLES STUDY OF PHYSICAL PROPERTIES OF SILICON EMISSION DURING SILICON OXIDATION. Hiroyuki Kageshima, Kenji Shiraishi, NTT Basic Research Labs, Kanagawa, JAPAN. 

C3.11 
COMPUTATIONAL STUDY ON SURFACE DIFFUSION AND NUCLEATION PROCESSES IN SURFACTANT EPITAXIAL GROWTH. Hitoshi Nakahara, Ayahiko Ichimiya, Nagoya Univ, Dept of Quantum Engineering, Nagoya, JAPAN; Masakazu Ichikawa, Joint Research Center for Atom Technology, Angstrom Technology Partnership, Tsukuba, JAPAN. 

C3.12 
THEORETICAl MODEL OF STEP MOTION ON THE SILICON SURFACES. Grigorii V. Gadiyak, Institute of Computational Technologies, Russian Academy of Sciences, Siberian Division, Novosibirsk, RUSSIA. 

C3.13 
A MOLECULAR DYNAMICS STUDY OF STEP MOTIONS ON VICINAL SILICON SURFACES. A.M.Mazzone, C.N.R.-LAMEL, Bologna, ITALY. 

C3.14 
HYDROGEN-INDUCED ATOMIC MOTION DURING THE INITIAL STAGE OF THIN FILM GROWTH. Kenjiro Oura, Masaru Kubo, Toshiaki Fujino, Mitsuhiro Katayama, Osaka Univ., Dept of Electronic Engineering, Suita, Osaka, JAPAN; Victor G. Lifshits, Alexander A. Saranin, Andrey V. Zotov, Inst of Automation and Control Processes, Vladivostok, RUSSIA. 

C3.15 
COADSORPTION ON SILICON SURFACE AND SURFACE PHASES FORMATION. Yury Gavriljuk, Alexander Saranin, Victor Lifshits, Inst of Automation & Control Processes, Russian Academy of Sciences, Vladivostok, RUSSIA; Andrew Zotov, Vladivostok Univ, Vladivostok, RUSSIA; Sergey Azatyan, Far East State Univ, Vladivostok, RUSSIA. 

C3.16 
A STUDY OF THE SURFACE RECONSTRUCTION OF (100). A.V. Mijiritskii, M.H. Langelaar, D.O. Boerma. 

C3.17 
THERMODYNAMICS AND KINETICS OF THE TISI2 PHASES VIA TIGHT BINDING MOLECULAR DYNAMICS. M.Iannuzzi, INFM and University of Milano, ITALY; M. Celino, ENEA, Roma, ITALY; Leo Miglio INFM and University of Milano, ITALY. 

C3.18 
Abstract Withdrawn. 

C3.19 
IN-SITU MONITORING OF InP ATOMIC LAYER EPITAXY IN METAL-ORGANIC CHEMICAL VAPOR DEPOSITION BY SURFACE PHOTO-ABSORPTION. Tae-Wan Lee, Heedon Hwang, Youngboo Moon, Euijoon Yoon, Seoul National University, School of Materials Science & Engineering, Seoul, KOREA; Young Dong Kim, Kyung Hee University, Dept of Physics, Seoul, KOREA. 

C3.20 
EFFECT OF INTERFACE ROUGHNESS AND GROWTH TEMPERATURE ON THE ABSORPTION SPECTRUM OF 810 NM REFLECTION MODULATOR ACTIVE LAYERS. Wendy L. Sarney, L. Salamanca-Riba, University of Maryland, Dept. of Materials and Nuclear Engineering, College Park, MD; John D. Bruno, Mary S. Tobin, U.S. Army Reseach Laboratory, Adelphi, MD. 

C3.21 
MATERIAL AND SURFACE ANALYSIS OF P-TYPE JUNCTIONS IN SILICON FORMED BY RAPID THERMAL DIFFUSION. M. Nolan, T. Perova, R.A. Moore, Dept. of Electrical and Electronic Eng., Trinity College Dublin, IRELAND; H.S. Gamble, Dept. of Electronic Eng., The Queen's University of Belfast, NORTHERN IRELAND. 

C3.22 
MICROSTRUCTURAL EVOLUTION NEAR THE InGaAs/GaAs STRANSKI-KRASTANOW TRANSITION. R. Leon, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA; S. Fafard, Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, CANADA. 

C3.23 
IN-SITU UHV TEM ANNEALING STUDIES OF Ge/Si ISLAND TRANSITIONS. William L. Henstrom, Peter D. Miller, J. Murray Gibson, Univ of Illinois at Urbana/Champaign, Dept of Physics, Urbana, IL. 

C3.24 
INVESTIGATION OF INTERFACE AND SURFACE SMOOTHNESS AND DEFECT FORMATION IN SiC/Si FILMS GROWN WITH Ge. Wendy L. Sarney, L. Salamanca-Riba, University of Maryland, Dept. of Materials & Nuclear Engineering, College Park, MD; P. Zhou, M. Spencer, Howard University, Materials Science Research Center of Excellence, Washington, DC; R.P. Sharma, R.D. Vispute, T. Venkatesan, Center for Superconductivity, University of Maryland, College Park, MD; K. Jones, U.S. Army Research Laboratory, Adelphi, MD. 

C3.25 
SIMULATION OF SURFACE MORPHOLOGY EVOLUTION IN SILICON GROWTH FROM SILANE. Maurizio Masi, Carlo Cavallotti, Valeria Bertani and Sergio Carra', Dipartimento di Chimica Fisica Applicata, Politecnico di Milano, Milano, ITALY. 

C3.26 
IN-SITU SYNCHROTRON X-RAY SCATTERING STUDY OF SURFACE AND INTERFACIAL BEHAVIOR DURING THE CRYSTALLIZATION OF a-Si:H FILMS. H.J. Kim, S.H. Jeon, D.Y. Noh, K-JIST, Dept of Materials Science and Engineering, Kwangju, KOREA. 

C3.27 
EFFECT OF Mo AND MoSix INTERLAYERS ON C54 TiSi2 FORMATION. Shun-ichiro Ohmi, and Raymond T. Tung, Lucent Technologies, Bell Laboratories, Murray Hill, NJ. 

C3.28 
SURFACE MORPHOLOGY AND STRUCTURE OF InP AND InGaAs FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. L. Li, B.-K. Han, Q. Fu, M. Begarney, D. Law and R.F. Hicks, Chemical Engineering Department, University of California, Los Angeles, CA. 

C3.29 
THEORETICAL INVESTIGATION OF THE INITIAL OXIDATION OF Si (001) AND THE BAND ALIGNMENT AT THE Si/SiO2INTERFACE. A. Demkov, Predictive Engineering Laboratory, Motorola, Inc, Mesa, AZ; O.F. Sankey, Department of Physics, Arizona State University, Tempe, AZ. 

C3.30 
THE MORPHOLOGY OF INCLUSIONS IN RUTILE NANOPARTICLES. Shirley Turner, Surface and Microanalysis Science Division, Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, MD. 

C3.31 
HRTEM CHARACTERIZATION OF STRAIN RELAXATION IN LOW TEMPERATURE ATOMIC LAYER EPITAXY OF INP/INAS/INP HETEROSTRUCTURES. H.H. Kang, L. Salamanca-Riba, Department of Materials and Nuclear Engineering, University of Maryland at College Park, College Park, MD; M. Beaudoin, L. Isnard, R.A. Maust, GCM and Departement de Genie Physique, Ecole Polytechnique de Montreal, Montreal, Quebec, CANADA. 

C3.32 
CONTROL OF MINORITY CARRIER RECOMBINATION THROUGH UHV ATOMIC SCALE SURFACE MODIFICATION. Paul G. Evans, Div. of Eng. and Appl. Sciences, Harvard Univ.; Stephen A. McDonald, Rowland Inst. for Science; Jene A. Golovchenko, Div of Eng. and Appl. Sciences, Harvard Univ, Cambridge, MA. 

C3.33 
INTERFACIAL REACTIONS IN THE FLIP CHIP SOLDER CR/CU/AU - PBSN METALLIZATION SYSTEM. R. Esser and A. Christou, Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD. 

C3.34 
REAL-TIME ELASTIC LIGHT SCATTERING MEASUREMENTS OF III-V SURFACE STRUCTURE EVOLUTION DURING MBE GROWTH. T. Pinnington, M. Adamcyk, A. Ballestad, Y. Levy, J.A. MacKenzie, T. Tiedje, Advanced Materials and Process Engineering Laboratory, University of British Columbia, Vancouver, BC, CANADA. 

C3.35 
ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF DIAMOND USING ENERGETIC IONS UP TO 400 keV. M. Ogura, M. Hasegawa, Y. Tanaka and N. Kobayashi, Quantum Radiation Division, Electrotechnical Laboratory, Tsukuba, JAPAN. 

C3.36 
EFFECT OF SURFACE CARBON AND WET CHEMICAL ETCHING ON THE SURFACE MORPHOLOGY OF LOW-MISCUT (100) SRTIO3 SINGLE-CRYSTAL SUBSTRATES. Andrew D. Polli, Thomas Wagner, Manfred Rühle, Max-Planck-Institut für Metallforschung, Stuttgart, GERMANY. 

C3.37 
OXIDATION DYNAMICS OF Cu THIN FILMS STUDIED BY IN-SITU UHV-TEM. J.C. Yang, M. Yeadon, J.M. Gibson, Univ. of Illinois at Urbana-Champaign, Materials Research Laboratory, Urbana, IL. 

SESSION C4: ALLOYS 
Chair: Flemming Besenbacher 
Tuesday Morning, December 1, 1998 
Salon C/D (M)

8:30 AM C4.1 
THERMODYNAMICS OF SURFACE-ALLOY FORMATION: Pd-Au ON Ru(0001). Babak Sadigh, Mark Asta, Andreas K. Schmid, Norm C. Bartelt and Robert Q. Hwang, Sandia National Laboratories, Livermore, CA; Andrew A. Quong, Lawrence Livermore National Laboratory, Livermore, CA. 

C4.2 
Abstract Withdrawn. 

9:00 AM C4.3 
THEORY OF SURFACE SEGREGATION AT Si/SiGe(001). Piotr Boguslawski, IF PAN, Warsaw, POLAND, J. Bernholc, Dept of Physics, NCSU, Raleigh, NC. 

9:15 AM C4.4 
THEORETICAL INVESTIGATION ON THE INITIAL INCORPORATION PROCESS OF Si ADATOMS ON GaAs(001) SURFACES. Kenji Shiraishi, Tomonori Ito*, NTT Basic Research Laboratories, Atsugi-shi, Kanagawa, JAPAN, *NTT System Electronics Laboratories, Atsugi-shi, Kanagawa, JAPAN. 

9:30 AM C4.5 
REAL-TIME OBSERVATION OF SOLID-LIQUID INTERFACE IN Al AND Al-Si BY TRANSMISSION ELECTRON MICROSCOPY. H. Saka, S. Tsukimoto, Nagoya University, Dept. of Quantum Engineering, Nagoya, JAPAN; S. Arai, Nagoya University, CIRSE, Nagoya, JAPAN. 

9:45 AM BREAK 

10:15 AM *C4.6 
GROWTH OF ULTRATHIN MAGNETIC FILMS BY PULSED LASER DEPOSITION. Jian Shen, Philippe Ohresser, Min Zheng, Hartmunt Jenniches, Sundar Manoharan, Manfred Klaua, Juegen Kirschner, Max-Planck-Institut fuer Mikrostrukturphysik, Halle/Saale, GERMANY. 

10:45 AM *C4.7 
ATOMIC AND ELECTRONIC PROPERTIES OF THIN-FILM ALLOY SURFACES. Phillip Sprunger, CAMD, Louisiana State University, Baton Rouge, LA. 

11:15 AM C4.8 
CO-SEGREGATION AT THE SURFACE OF A Pb-Bi-Ni ALLOY: COMBINED AB INITIO AND MONTE CARLO STUDY. Alex Landa, Paul Wynblatt, Carnegie Mellon Univ, Dept of Materials Science and Engineering, Pittsburgh, PA; Alex Girshick, Vaclav Vitek, Univ of Pennsylvania, Dept of Materials Science and Engineering, Philadelphia, PA; Andrei Ruban, Hans Skriver, Technical Univ of Denmark, Physics Department, DENMARK. 

11:30 AM C4.9 
ALLOY DECOMPOSITION AND SURFACE INSTABILITIES IN THIN FILMS. François Léonard1,2 and Rashmi C. Desai21IBM T.J. Watson Research Center, Yorktown Heights, NY, 2Univ. of Toronto, Dept. of Physics, Toronto, Ontario, CANADA. 

11:45 AM C4.10 
CHARACTERIZATION OF EXTENDED INTERFACES USING ULTRAFAST LASER ULTRASONICS. C.J.K. Richardson, J.W. Wagner, M.J. Ehrlich and J.B. Spicer, Dept of Materials Science and Engineering, The Johns Hopkins University. 

SESSION C5: MORPHOLOGY EVOLUTION 
Chair: Jian Shen 
Tuesday Afternoon, December 1, 1998 
Salon C/D (M)

1:30 PM C5.1 
CRYSTALS BY DESIGN: IN-SITU ATOMIC FORCE MICROSCOPY INVESTIGATION OF SURFACE GROWTH MORPHOLOGY AND KINETICS. Terry A. Landa,b, Mary T. McBrideb, Jim J. DeYoreoa, G.Tayhas, R. PalmorebaLawrence Livermore National Laboratory, Livermore, CA; bUniversity of California Davis, Department of Chemistry, Davis, CA. 

1:45 PM C5.2 
SURFACE DYNAMICS DURING CaCO3 HOMOEPITAXY DETERMINED BY IN SITU AFM. H. Teng, C. Orme*, P.M. Dove and J.J. De Yoreo*, School of Earth and Atmospheric Sciences, Georgia Institute of Technology, Atlanta Georgia; *Department of Chemistry and Materials Science, Lawrence Livermore National Laboratory, Livermore, CA. 

2:00 PM *C5.3 
POST GROWTH MORPHOLOGICAL EVOLUTION IN METALLIC HOMOEPITAXY. Woei Wu Pai, Department of Physics, University of Tennessee at Knoxville and State State Division, Oak Ridge National Laboratory. 

2:30 PM C5.4 
STUDY OF SURFACE ETCH-FRONT MORPHOLOGY USING LIGHT SCATTERING TECHNIQUES. Y.-P. Zhao, G.-C. Wang, and T.-M. Lu Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY. 

2:45 PM C5.5 
ANNEALING OF NANO-RIPPLED Si(001) AT LOW TEMPERATURE. Jonah D. Erlebacher, Harvard University, Division of Engineering and Applied Science, Cambridge, MA; Eric Chason, Sandia National Laboratories, Albuquerque, NM; Michael J. Aziz, Harvard University, Division of Engineering and Applied Science, Cambridge, MA. 

3:00 PM BREAK 

3:30 PM C5.6 
ISLAND SIZE DISTRIBUTIONS AND THE GROWTH OF INAS QUANTUM DOTS ON GaAs(001). T.S. Jones, G.R. Bell, P.B. Joyce, T.J. Krzyzewski, B.A. Joyce, D.D. Vvedensky, IRC for Semiconductor Materials, Imperial College, London, UNITED KINGDOM. 

3:45 PM *C5.7 
PROFILE SCALING IN DECAY OF NANOSTRUCTURES. Daniel Kandel, Dept of Physics of Complex Systems, Weizmann Institute of Science, Rehovot, ISRAEL. 

4:15 PM C5.8 
DIFFUSION-REACTION MODELS OF NANOSCALE ORDERING PROCESSES. Pita Atala, Dept of Physics, Univ of Maryland, College Park, MD. 

4:30 PM C5.9 
MODELING AND MEASURING STRAIN IN Ge ISLANDS ON Si (001) BY DIFFRACTION CONTRAST TEM. Peter D. Miller, William L. Henstrom, and J. Murray Gibson, Dept of Physics, University of Illinois at Urbana-Champaign, Urbana, IL. 

4:45 PM C5.10 
MORPHOLOGY OF ION SPUTTERED SURFACES AND THE NOISY KURAMOTO-SIVASHINSKY EQUATION. J.T. Drotar, Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY. 

SESSION C6: ELECTRONIC GROWTH AND ELECTROMIGRATION 
Chair: Margret Giesen 
Wednesday Morning, December 2, 1998 
Salon C/D (M)

8:30 AM C6.1 
ELECTRONIC STABILIZATION OF STEPS ON InP(110) SURFACES. Ph. Ebert, M. Heinrich, C. Domke, and K. Urban, Institut fur Festkorperforschung, Forschungszentrum Julich, Julich, GERMANY. 

8:45 AM *C6.2 
QUANTUM EFFECTS IN ULTRATHIN METAL OVERLAYER EPITAXY. Zhenyu Zhang, Jun-Hyung Cho, Solid State Division, Oak Ridge National Lab, Oak Ridge, TN; Qian Niu and Chih-Kang Shih, Dept of Physics, Univ. of Texas, Austin, TX; Zhigang Suo, Dept of Mechanical & Aerospace Engineering, Princeton Univ., Princeton, NJ. 

9:15 AM BREAK 

9:30 AM *C6.3 
STEADY-STATE MOTION OF SILICON ISLANDS DRIVEN BY A DIRECT CURRENT. Jean-Jacques Metois, Jean-Claude Heyraud, CRMC2, Marseille, FRANCE; Alberto Pimpinelli, LASMEA Clermont2, Aubriere, FRANCE. 

10:00 AM *C6.4 
PATTERNS AND RATES IN SUB-MICRON SCALE SURFACE RESTRUCTURING. Ellen D. Williams, Q.J. Gu, D.-J. Liu, J.D. Weeks, S. Das Sarma, Materials Research Science and Engineering Center, University of Maryland, College Park, MD; X.-S. Wang, Hong Kong Univ. of Science and Technology, Clear Water Bay, HONG KONG, Prof. Hyeong-Chai Jeong, Department of Physics, Sejong University, Seoul, KOREA. 

10:30 AM C6.5 
RESPONSES OF MONOLAYER CLUSTERS TO ELECTROMIGRATION. Olivier Pierre-Louis, T.L. Einstein, Physics Department, University of Maryland, College Park, MD. 

10:45 AM C6.6 
THEORETICAL ANALYSIS OF VOID-GRAIN BOUNDARY INTERACTION IN METALLIC THIN FILM INTERCONNECT LINES UNDER ELECTROMIGRATION CONDITIONS. M. Rauf Gungor, Department of Chemical Engineering, University of California Santa Barbara, Santa Barbara, CA; William D. Nix, Huajian Gao, John C. Bravman, Department of Materials Science and Engineering, Stanford University, Stanford, CA. 

11:00 AM C6.7 
RATCHET EFFECT IN SURFACE ELECTROMIGRATION: SMOOTHING SURFACES BY AN AC FIELD. Albert-László Barabási, Choongseop Lee, Department of Physics, University of Notre Dame, Notre Dame, IN; and Imre Derényi, Department of Atomic Physics, Eotvos University, Budapest, HUNGARY. 

11:15 AM C6.8 
SELF-CONSISTENT THEORETICAL ANALYSIS OF VOID MORPHOLOGICAL EVOLUTION IN METALLIC THIN FILMS UNDER STRESS AND SURFACE ELECTROMIGRATION CONDITIONS. M. Rauf Gungor, Henry S. Ho, and Dimitrios Maroudas, Department of Chemical Engineering, University of California, Santa Barbara, CA. 

11:30 AM *C6.9 
DEFECTS AND CONDUCTIVITY IN ULTRATHIN METALLIC FILMS. Martin Henzler, Institut für Festkörperphysik, Universität Hannover, Hannover, GERMANY. 

SESSION C7: DYNAMICS OF ADATOMS, VACANCIES AND CLUSTERS II 
Chairs: James B. Hannon and Harald Ibach 
Wednesday Afternoon, December 2, 1998 
Salon C/D (M)

1:30 PM *C7.1 
MOUND FORMATION AND ABSENCE OF COARSENING IN HOMOEPITAXY. Thomas Michely, I. Physikalisches Institut, RWTH Aachen, Aachen, GERMANY; Matthias Kalff, IGV, Forschungszentrum Jülich, Jülich, GERMANY; George Comsa, Institut für Theoretische und Physikalische Chemie, Universität Bonn, Bonn, GERMANY; Pavel Smilauer, Institute of Physics, Praha, CZECH REPUBLIC. 

2:00 PM C7.2 
IN-SITU NANOCALORIMETERY MEASUREMENTS OF EARLY STAGES OF THIN FILM NUCLEATION AND COARSENING. D.Y. Ban, M. Zhang, S.L. Lai, T.D. Wisleder and L.H. Allen, Dept of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL. 

2:15 PM C7.3 
QUANTITATIVE ANALYSIS OF SPATIAL DISTRIBUTION OF NUCLEATION SITES: MICROSTRUCTURAL IMPLICATIONS. W.S. Tong, J.M. Rickman and K. Barmak, Lehigh University, Department of Materials Science and Engineering, Bethlehem, PA. 

2:30 PM C7.4 
REAL-TIME X-RAY SCATTERING STUDIES OF 2-D ISLAND NUCLEATION AND COALESCENCE DURING MOCVD GROWTH OF GaN. G.B. Stephenson, J.A. Eastman, O. Auciello, A. Munkholm, Argonne National Laboratory; C. Thompson, Northern Illinois University and Argonne National Laboratory; P. Fini, S.P. DenBaars, J.S. Speck, University of California, Santa Barbara; P.H. Fuoss, AT&T Laboratories. 

2:45 PM BREAK 

3:15 PM C7.5 
TRENDS IN SURFACE DYNAMICS DURING NEAR-EQUILIBRIUM GROWTH OF CRYSTAL SURFACES BY LOW TEMPERATURE LIQUID PHASE EPITAXY. Jim J. De Yoreoa, Terry A. Land a,b, Chris Orme a, Hui H. Teng c, Mary T. Mc Brideb, Tracie Martin b, Patricia M. Dove c and G. Tayhas R. Palmore b,a Dept of Chemistry and Materials Science, Lawrence Livermore National Laboratory, Livermore, CA,b Dept of Chemistry, University of California at Davis, Davis, CA,c School of Earth and Atmospheric Sciences, Georgia Institute of Technology, Atlanta, GA. 

3:30 PM C7.6 
ATOMISTIC PROCESSES DURING THE GROWTH OF III-V SEMICONDUCTORS. D.D. Vvedensky, M. Itoh, G.R. Bell, T.S. Jones, and B.A. Joyce, Interdisciplinary Research Centre for Semiconductor Materials, Imperial College, London, UNITED KINGDOM; M.F. Gyure, J.H.G. Owen, C. Ratsch, and J.J. Zinck, HRL Laboratories, Malibu, CA. 

3:45 PM C7.7 
CHARACTERIZATION OF DYNAMIC SURFACE AND MICROSTRUCTURE EVOLUTION IN SPUTTERED Al FILMS. Adriana E. Lita, John E. Sanchez, Jr., Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI. 

4:00 PM C7.8 
THE CORRELATION BETWEEN MGO (100) SURFACE MORPHOLOGY AND CHEMICAL REACTIVITY. Scott S. Perry, Syed Imaduddin, Oussama El-bjeirami, Philip B. Merrill, Sang Min Lee, and Hyun I. Kim, University of Houston, Department of Chemistry, Houston, TX. 

4:15 PM C7.9 
SOFT LANDINGS OF Co NANOPARTICLES ON CLEAN Cu AND Ag SURFACES: A COMBINED IN-SITU TEM AND MD STUDY. Claus G. Zimmermann, Mark Yeadon, Mai Ghaly, J. Murray Gibson, Robert S. Averback, University of Illinois, Frederick Seitz Materials Research Laboratory, Urbana/Champaign, IL; Ulrich Herr, Konrad Samwer, Institut für Physik, Universität Augsburg, GERMANY. 

4:30 PM C7.10 
HREM STUDY OF In AND Mo NANOCRYSTALS AS-DEPOSITED IN UHV-MBE. Qing Chen, Miyoko Tanaka, Kazuo Furuya, National Research Inst for Metals, Tsukuba, Ibaraki, JAPAN. 

4:45 PM C7.11 
SHAPE TRANSFORMATION AND SURFACE MELTING OF CUBIC AND TETRAHEDRAL PLATINUM NANOCRYSTALS. Zhong L. Wang, Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA; Janet M. Petroski, Travis C. Green and Mostafa A.