Meetings & Events

1998 MRS Fall Meeting & Exhibit

November 30 - December 4, 1998 | Boston
Meeting Chairs:
 Clyde L. Briant, Eric H. Chason, Howard E. Katz, Yuh Shiohara

Symposium D—Integration of Dissimilar Materials in Micro- and Optoelectronics

-MRS-

Chairs

Eugene Fitzgerald, MIT 
Fred Kish, Hewlett Packard 
Steven Ringel, Ohio State Univ 
James Speck, Univ of California-Santa Barbara

Symposium Support

  • Army Research Office

* Invited paper

SESSION D1: BONDING, LIFT-OFF, AND BACK-END PROCESSES 
Chair: Fred Kish 
Monday Morning, November 30, 1998 
Provincetown/Orleans (M)

8:30 AM *D1.1 
INTEGRATION OF DISSIMILAR MATERIALS BY WAFER BONDING. Ulrich M. Goesele, Max Planck Institute of Microstructure Physics, Halle, GERMANY. 

9:00 AM D1.2 
BONDING AND LASER LIFTOFF OF GaN THIN FILMS FROM SAPPHIRE ONTO Si AND GaAs SUBSTRATES. W.S. Wong, Dept of Materials Science and Mineral Engineering, University of California, Berkeley, CA; A.B. Wengrow, Applied Science and Technology Group, University of California, Berkeley, CA; Y. Cho, E.R. Weber, Dept of Materials Science and Mineral Engineering, University of California, Berkeley, CA; N.W. Cheung, Dept of Electrical Engineering and Computer Science, University of California, Berkeley, CA; T. Sands, Dept of Materials Science and Mineral Engineering, University of California, Berkeley, CA. 

9:15 AM D1.3 
GROWTH OF GaN ON THIN (111) Si LAYERS WAFER BONDED TO (100) Si SUBSTRATES. J.G. Fleming, Jung Han, Sandia National Laboratories, Albuquerque, NM. 

9:30 AM D1.4 
ONE DIMENSIONAL PHOTONIC BANDGAP BY WAFER BONDING AND DELAMINATION TECHNIQUE. K. Wada, T. Chen, J. Michel, L.C. Kimerling, Massachusetts Institute of Technology, Cambridge, MA; H. Aga, K. Mitani, T. Abe, Shin-Etsu Handotai, Annaka, JAPAN; M. Suezawa, Tohoku University, Sendai, JAPAN. 

9:45 AM BREAK 

10:15 AM *D1.5 
INTEGRATED PHOTONIC DEVICES AND SYSTEMS USING WAFER BONDING TECHNOLOGY. Y.-H. Lo, Cornell University, Ithaca, NY. 

10:45 AM D1.6 
A MODEL OF WAFER BONDING BY ELASTIC ACCOMMODATION. H.H. Yu and Z. Suo, Mechanical and Aerospace Engineering Department and Princeton Materials Institute, Princeton University, Princeton, NJ. 

11:00 AM D1.7 
INTEGRATION OF DIAMOND AND SILICON FOR ELECTRONIC MATERIALS. Stefan Bengtsson, Mats Bergh, Anders Jauhiainen, Solid State Electronics Laboratory, Dept of Microelectronics ED, Chalmers University of Technology, Goteborg, SWEDEN; Anders Soderbarg, Ericsson Components AB, Kista-Stockholm, SWEDEN; Bengt Edholm, Ericsson Mobile Communication AB, Nya Vattentornet, Lund, SWEDEN; Jorgen Olsson, Solid State Electronics, Uppsala University, Uppsala, SWEDEN; Stefan Tiensuu, Mitel Semiconductor AB, SWEDEN. 

11:15 AM D1.8 
EFFECT OF MICROSTRUCTURE AND CHEMICAL BONDING ON THE ADHESION STRENGTH OF A SILICON/POLYMER INTERFACE FOR MICROELECTRONIC PACKAGING APPLICATIONS. Dimitrios Pantelidis, John C. Bravman, Department of Materials Science and Engineering, Stanford University, Stanford, CA. 

11:30 AM D1.9 
FE-MODELING AND PHYSICAL TESTING OF IGBT CHIPS FOR PRESS-PACKAGING. Gianni Nicoletto, Alessandro Pirondi, Dept of Industrial Engineering, Paolo Cova, Dept of Information Engineering, University of Parma, Parma, ITALY; Maurizio Pasqualetti, Marco Portesine, Pier Enrico Zani, Angelo Camera, Ansaldo Trasporti, Semiconductors Div, Genova, ITALY. 

11:45 AM D1.10 
FLIP CHIP INTERCONNECTIONS BASED ON Bi-COATED Ag-Sn SOLDER BALLS. T.M. Korhonen, M.A. Korhonen and C.-Y. Li, Cornell University, Dept. of Materials Science and Engineering, Ithaca, NY; V. Vuorinen and J.K. Kivilahti, Helsinki University of Technology, Dept. of Electrical and Communications Engineering, Espoo, FINLAND. 

SESSION D2: DEFECT ENGINEERING I 
Chair: Catherine Hartford 
Monday Afternoon, November 30, 1998 
Provincetown/Orleans (M)

1:30 PM *D2.1 
GROWTH AND CHARACTERIZATION OF GaN THIN FILMS ACHIEVED VIA LATERAL EPITAXIAL OVERGROWTH ON 6H-SiC(0001) SUBSTRATES. Robert F. Davis, Ok-Hyun Nam, T.S. Zheleva, M.D. Bremser, R.J. Nemanich, B.M. Ward; Dept of Materials Science and Engineering, North Carolina State University, Raleigh, NC. 

2:00 PM D2.2 
KINETIC MODELLING OF THE SELECTIVE EPITAXY OF GaAs ON PATTERNED SUBSTRATES BY HVPE. APPLICATION TO THE CONFORMAL GROWTH OF LOW DEFECT DENSITY GaAs LAYERS ON Si. Evelyne Gil-Lafon, Jérome Napierala, Dominique Castelluci, Alberto Pimpinelli, LASMEA UMR CNRS, Université Blaise Pascal, Clermont-Ferrand, FRANCE ; Bruno Gérard, Didier Pribat, THOMSON-CSF Central Research Laboratory, Orsay, FRANCE. 

2:15 PM D2.3 
MECHANISMS OF DEFECT GENERATION IN HIGHLY MISMATCH III-V EPITAXIAL SYSTEMS. S. Ruvimov, Z. Liliental-Weber and J. Washburn, Lawrence Berkeley National Laboratory, Berkeley, CA. 

2:30 PM BREAK 

3:00 PM *D2.4 
HVPE GaN. Richard Molnar

3:30 PM D2.5 
GROWTH OF IMPROVED GaAs/Si: SUPRESSION OF 3-D NUCLEATION FOR HETEROEPITAXIAL FILMS WITH REDUCED THREADING DISLOCATION SEGMENT DENSITY. Patrick Taylor*, William A. Jesser, University of Virginia, Dept. of Materials Science and Engineering, Charlottesville, VA; Mike Martinka, J. David Benson, John H. Dinan, US Army CECOM-Night Vision and Electronic Sensors Dir. Fort Belvoir, VA; Wayne Chang, John Bradshaw, Monica Lara-Taysing, William Clark III, US Army Research Laboratory, Sensors and Electronic Devices Directorate, Adeplhi, MD, *now with M.I.T.-Lincoln Laboratory, Lexington, MA. 

3:45 PM D2.6 
MONOLITHIC INTEGRATION OF III-V MICROCAVITY LEDS ON SILICON DRIVERS USING CONFORMAL EPITAXY. Bruno Gérard, Xavier Marcadet, Patrick Etienne, Didier Pribat, Julien Nagle, THOMSON-CSF Central Research Laboratory, Orsay, FRANCE ; Jean-Francois Carlin, Marc Ilegems, Institute for Micro- and Opto-electronic, Ecole Polytechnique Fédérale, Lausanne, SWITZERLAND; Detlef Friedrich, Joerg Eichholz, Helmut Bernt, Fraunhofer Institute for Silicon Technology, Itzehoe, GERMANY. 

4:00 PM D2.7 
EVOLUTION OF MICROSTRUCTURE AND DISLOCATION DYNAMICS IN InxGa1-xP GRADED COMPOSITION BUFFERS GROWN ON GaP BY MOVPE. Andrew Y. Kim and Eugene A. Fitzgerald, MIT, Dept. of Materials Science and Engineering, Cambridge, MA. 

4:15 PM D2.8 
STRAIN RELAXATION OF SIGE ON SI BY HYDROGEN IMPLANTATION REDUCES DISLOCATION DENSITY. S. Mantl, B. Hollaender, S. Mesters, S. Rongen, Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, Juelich, GERMANY; H.J. Herzog, H. Kibbel, T. Hackbarth, Daimler Benz-AG, Research and Technology 2, Ulm, GERMANY. 

4:30 PM D2.9 
THREADING DISLOCATION DENSITY REDUCTION IN HETEROEPITAXIAL GROWTH. Margherita Chang, Glenn E. Beltz, Department of Mechanical and Environmental Engineering, University of California, Santa Barbara, CA; Sheila K. Mathis, Materials Department, University of California, Santa Barbara, CA. 

4:45 PM D2.10 
QUANTITATIVE EXPERIMENTAL DETERMINATION OF THE EFFECT OF DISLOCATION - DISLOCATION INTERACTIONS ON STRAIN RELAXATION IN LATTICE MISMATCHED HETEROSTRUCTURES. Eric A. Stach, Lawrence Berkeley National Laboratory, National Center for Electron Microscopy, Berkeley, CA; R. Hull, University of Virginia, Department of Materials Science, Charlottesville, VA; R.M. Tromp, F.M. Ross and M.C. Reuter, IBM T.J. Watson Research Center, Research Division, Yorktown Heights, NY; and J.C. Bean, University of Virginia, Department of Electrical Engineering, Charlottesville, VA. 

SESSION D3: DEFECT ENGINEERING II 
Chair: Eugene A. Fitzgerald 
Tuesday Morning, December 1, 1998 
Provincetown/Orleans (M)

8:30 AM *D3.1 
MODELS OF STRAIN RELAXATION IN LAYERED COMPLIANT SUBSTRATE SYSTEMS. L.B. Freund, Division of Engineering, Brown University, Providence, RI. 

9:00 AM D3.2 
OBERVATIONS ON THE KINETICS OF RELAXATION IN EPITAXIAL FILMS GROWN ON COMPLIANT SUBSTRATES. R.V. Kukta, California Inst of Technology, Div of Engineering and Applied Sciences, Pasadena, CA; L.B. Freund, Div of Engineering, Brown Univ, Providence, RI. 

9:15 AM D3.3 
STRAIN RELAXATION DURING HETEROEPITAXY ON TWIST BONDED COMPLIANT GaAs SUBSTRATES. P. Kopperschmidt, St. Senz, U. Goesele, Max-Planck-Institute of Microstructure Physics, Halle, GERMANY. 

9:30 AM D3.4 
LATTICE ENGINEERING USING LATERAL OXIDATION OF AlAs: AN APPROACH TO GENERATE SUBSTRATES WITH NEW LATTICE CONSTANTS. Prashant Chavarkar, Li-Jie Zhao, Stacia Keller, K. Alexis Black, Evelyn Hu, James Speck, Umesh Mishra, Dept of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA. 

9:45 AM BREAK 

10:15 AM *D3.5 
MODELING OF DISLOCATIONS IN HETEROEPITXIAL FILMS. Alexei E. Romanov, A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, RUSSIA. 

10:45 AM D3.6 
DEVELOPMENT OF A PROCESS SIMULATOR FOR STRAINED LAYER EPITAXY. R. Hull, E. Stach, Y. Quan and J.C. Bean*; University of Virginia, Department of Materials Science and Engineering (*Department of Electrical Engineering), Charlottesville, VA. 

11:00 AM D3.7 
CHARACTERIZATION OF SINGLE-CRYSTAL 3C-SiC ON SI EPITAXIAL LAYERS. M.E. Okhusyen, S E. Saddow, M.S. Mazzola, M. Dudley,1 X.R. Huang,1 W. Huang,1 and M. Shamsuzzoha,2 Emerging Materials Research Laboratory, Dept of ECE, Mississippi State University, Starkville, MS 1Dept of Materials Science, SUNY-Stony Brook, Stony Brook, NY; 2Dept of Agriculture and Mining, University of Alabama, Tuscaloosa, AL. 

11:15 AM D3.8 
METALORGANIC MOLECULAR BEAM EPITAXY OF GaAsP FOR VISIBLE LIGHT-EMITTING DEVICES ON Si. Masahiro Yoshimoto, Junji Saraie, Kyoto Institute of Technology, Dept of Information Sci and Electronics, Kyoto, JAPAN; Toshiyuki Yasui, Sanghoon Ha, Hiroyuki Matsunami, Kyoto Univ, Dept Electronic Sci and Eng, Kyoto, JAPAN. 

11:30 AM D3.9 
UNIQUE DEFECT-INDUCED DONOR STRUCTURE AT THE LATTICE MISMATCHED InAs/GaP HETEROINTERFACE. V.Gopal, E.-H. Chen, E.P. Kvam, and J.M. Woodall, Purdue University, W. Lafayette, IN. 

11:45 AM D3.10 
DEEP LEVEL DEFECT STUDIES IN MOCVD-GROWN InxGa1-xAs1-yNy FILMS LATTICE-MATCHED TO GaAs. Daewon Kwon, Robert J. Kaplar, Steven A. Ringel, The Ohio State Univ, Dept of Electrical Engineering, Columbus, OH; A.A. Allerman, Sandia National Laboratories, Albuquerque, NM. 

SESSION D4: INTEGRATION OF DISSIMILAR MATERIALS 
Chair: Steven A. Ringel 
Tuesday Afternoon, December 1, 1998 
Provincetown/Orleans (M)

1:30 PM D4.1 
OPTICAL ABSORPTION IN ZnSe-GaAs HETEROVALENT QUANTUM STRUCTURES. Mitsuru Funato, Shizuo Fujita, and Shigeo Fujita, Dept of Electronic Science and Engineering, Kyoto University, Kyoto, JAPAN. 

1:45 PM D4.2 
DEEP LEVEL CHARACTERIZATION OF INTERFACE-ENGINEERED ZnSe LAYERS ON GaAs GROWN BY MOLECULAR BEAM EPITAXY. Adrian Hierro, Daewon Kwon, Steven A. Ringel, L.J. Brillson, J. Schaefer, A.P. Young, Ohio State Univ, Dept of Electrical Engineering, Columbus, OH; A. Franciosi, Istituto Nazionale di Fisica della Materia, Laboratorio Tecnologie Avanzate Superfici e Catalisi, Trieste, ITALY. 

2:00 PM D4.3 
SPATIAL DISTRIBUTION OF LUMINESCENT CENTERS IN ORGANOMETALLIC VAPOR PHASE EPITAXIAL GROWN ZnxCd1-xSe ON InP (001). X.B. Zhang and S.K. Hark, The Chinese University of Hong Kong, Department of Physics, Shatin, Hong Kong. 

2:15 PM D4.4 
HETEROEPITAXY OF GaAs ON CaF2/Si(111) BY SURFACE FREE ENERGY MODULATION METHOD. Koji Kawasaki and Kazuo Tsutsui, Interdisciplinary Grad Sch Sci & Eng, Tokyo Inst Technol, Yokohama, JAPAN. 

2:30 PM D4.5 
GROWTH OF AlN AND InN ON Si(111) BY MOLECULAR BEAM EPITAXY. H.P. David Schenk, Gela D. Kipshidze, Ute Kaiser, Joerg Schulze, Wolfgang Richter, Friedrich-Schiller-Universitat Jena, Physikalisch Astronomische Fakultat, Jena, GERMANY. 

2:45 PM D4.6 
ADHESION AND SCHOTTKY-BARRIER HEIGHTS AT SiC/Al AND SiC/Ti INTERFACES: A FIRST-PRINCIPLES STUDY. Masanori Kohyama, Dept of Material Physics, Osaka National Research Institute, Ikeda, Osaka, JAPAN; John Hoekstra, Dept of Materials, Oxford University, Oxford, UK. 

3:00 PM BREAK 

3:30 PM D4.7 
Abstract Withdrawn. 

3:45 PM D4.8 
EPITAXIAL GROWTH OF NANOCRYSTAL ZnO ON CaF2/Si(111). Masahiro Watanabe, Yasuhisa Maeda, Atsushi Yamada, Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Tokyo, JAPAN. 

4:00 PM D4.9 
CONTROL OF ZNO NANOCRYSTALLINE THIN FILM GROWTH ON LATTICE-MISMATCHED SAPPHIRE FOR ULTRAVIOLET EXCITON LASER. M. Kawasaki, A. Ohtomo, I. Ohkubo, K. Saikusa, H. Koinuma, Dept. of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, JAPAN; G. Isoya, T. Yasuda, Dept. Elec. Mat., Ishinomaki Sensyu Univ., Ishinomaki, Japan, Y. Segawa, Photodynamics Res. Ctr., RIKEN, Sendai, JAPAN. 

4:15 PM D4.10 
FABRICATION OF MONOLITHICALLY INTEGRATED FERRITE/SEMICONDUCTOR CIRCULATORS. S.A. Oliver, Northeastern University, Center for Electromagnetic Research, Boston, MA; H. How, EMA Inc. Boston, MA; P. Shi, W. Hu, M.L. Chen, I. Kozulin, N.E. McGruer, P.M. Zavracky and C. Vittoria, Northeastern University, Dept. of Electrical and Computer Engineering, Boston, MA. 

4:30 PM D4.11 
GROWTH OF Fe3O4/TiN HETEROSTRUCTURE BY PULSED LASER DEPOSITION AND STUDY OF ITS STRUCTURAL, MAGNETIC AND ELECTRICAL PROPERTIES. Eric J. Li, S.B. Ogale, A. Orozco, I. Jin, R.D. Vispute, R. Ramesh and T. Venkatesan NSF-MRSEC on oxides, surfaces and probes and Center for superconductivity research, Department of Physics, University of Maryland, College Park, MD. 

4:45 PM D4.12 
SINGLE CRYSTAL CUBIC Gd2O3 FILMS ON GaAs - A NEW DIELECTRIC FOR GaAs PASSIVATION. M. Hong, J. Kwo, A.R. Kortan, J.P. Mannaerts, M.C. Wu, and A.M. Sergent, Bell Labs, Lucent Technologies, Murray Hill, NJ.