Meetings & Events

1998 MRS Fall Meeting & Exhibit

November 30 - December 4, 1998 | Boston
Meeting Chairs:
 Clyde L. Briant, Eric H. Chason, Howard E. Katz, Yuh Shiohara

Symposium G—GaN and Related Alloys

-MRS-

Chairs

Chihping Kuo Hewlett Packard 
Stephen Pearton Univ of Florida 
Takeshi Uenoyama Matsushita Electric Industrial Co Ltd 
Alan Wright Sandia National Laboratories

Symposium Support

  • Army Research Office
  • Hewlett Packard Company
  • Matsushita Electric Industrial Co., Ltd.
  • Sandia National Laboratories

* Invited paper

TUTORIAL 

FTG: GaN ELECTRONIC AND PHOTONIC DEVICES 
Sunday, November 29, 1:00-5:00 p.m. 
Salons C/D (Marriott) 

The tutorial will cover the basic materials parameters for the GaN/AlN/InN System, basic processing modules, and GaN-Based Photodetectors, Transistors, LEDs, and Lasers. The applications of these devices will also be discussed. 

Instructor: Michael S. Shur, Rensselaer Polytechnic Institute 

SESSION G1: PLENARY 
Chairs: Takeshi Uenoyama and Alan F. Wright 
Monday Morning, November 30, 1998 
Salon G (M)

8:30 AM *G1.1 
InGaN/GaN/AlGaN-BASED LASER DIODES. Shuji Nakamura, Department of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima, JAPAN. 

9:00 AM *G1.2 
MATERIAL PROPERTIES OF GaN IN THE CONTEXT OF ELECTRONIC DEVICES. Hadis Morkoc, Virginia Commonwealth University, Richmond VA. 

9:30 AM *G1.3 
NEAR DEFECT FREE GaN SUBSTRATES. Sylwester Porowski, High Pressure Research Center, Warsaw, POLAND. 

10:00 AM BREAK 

10:30 AM *G1.4 
DRY AND WET ETCHING FOR III-V NITRIDES. I. Adesida, C. Youtsey, A.T. Ping, F. Khan, University of Illinois, Dept. of Electrical and Computer Engineering, Urbana-Champaign, IL; L. Romano, Xerox PARC, Palo Alto, CA. 

11:00 AM *G1.5 
CONTACT ISSUES FOR GaN TECHNOLOGY. D. Qiao, S.S. Lau Department of Electrical and Computer Engineering University of California San Diego, CA. 

11:30 AM *G1.6 
PYROELECTRIC AND PIEZOELECTRIC PROPERTIES OF GaN-BASED MATERIALS. Michael S. Shur, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY; A. D. Bykhovski, Department of Electrical Engineering, University of Virginia, Charlottesville, VA; R. Gaska APA Optics, Inc., Blaine, MN. 

SESSION G2: LASER DIODES AND SPECTROSCOPY 
Chairs: Chihping Kuo and Stephen J. Pearton 
Monday Afternoon, November 30, 1998 
Salon G (M)

1:30 PM *G2.1 
THEORETICAL INVESTIGATION OF GROUP-III NITRIDE QUANTUM WELL LASERS. W.W. Chow, M.H. Crawford, J. Han and A.F. Wright, Sandia National Laboratories, Albuquerque, NM. 

2:00 PM G2.2 
CHARACTERIZATION OF InGaN/GaN-BASED MULTI-QUANTUM WELL DISTRIBUTED FEEDBACK LASERS. Daniel Hofstetter, Robert L. Thornton, Linda T. Romano, David P. Bour, Michael Kneissl, Rose M. Donaldson, Clarence Dunnrowicz, XEROX Palo Alto Research Center, Palo Alto, CA. 

2:15 PM G2.3 
MECHANISMS OF OPTICAL GAIN IN CUBIC GaN AND InGaN. A. Hoffmann, J. Holst, I. Broser, Institute of Solid State Physics, Technical University Berlin, GERMANY; D.J. As, D. Schikora, B. Schoettker, K. Lischka Fachbereich Physik, University of Paderborn, GERMANY. 

2:30 PM G2.4 
CARRIER DYNAMICS OF ABNORMAL TEMPERATURE-DEPENDENT EMISSION SHIFT IN MOCVD-GROWN InGaN EPILAYERS AND InGaN/GaN QUANTUM WELLS. Yong-Hoon Cho, B.D. Little, G.H. Gainer, J.J. Song, Oklahoma State Univ, Center for Laser and Photonics Research and Dept of Physics, Stillwater, OK; S. Keller, U.K. Mishra, S.P. DenBaars, Univ of California, Electrical and Computer Engineering and Materials Dept, Santa Barbara, CA. 

2:45 PM G2.5 
MECHANISM OF RADIATIVE RECOMBINATION IN InGaN/GaN MULTIPLE QUANTUM WELLS. B. Monemar, J.P. Bergman, J. Dalfors, N. Saksulv, P.O. Holtz, Dept of Physics and Measurement Technology, Linköping University, Linköping, SWEDEN; H. Amano and I. Akasaki, Meijo University, Nagoya, JAPAN. 

3:00 PM BREAK 

3:30 PM *G2.6 
ROOM TEMPERATURE GAIN IN GaN LASER DIODES. Georg Mohs, Makoto Kuwata-Gonokami, Dept of Applied Physics, Univ. of Tokyo, Tokyo, JAPAN, Core Research for Evolutional Sciences and Technology (CREST), Japan Science and Technology Corporation (JST) JAPAN; Shuji Nakamura, R&D Department, Nichia Chemical Indistries, Ltd., Tokushima, JAPAN. 

4:00 PM *G2.7 
SPECTROSCOPIC STUDIES IN InGaN QUANTUM WELL LASERS. Shigefusa Chichibu a, Steven DenBaars, Materials Dept., Univ. of California Santa Barbara, CA; Takayuki Sota, Dept. of EEC, Waseda Univ., Tokyo, JAPAN; Shuji Nakamura, Dept. of Research and Development, Nichia Chemical Ind. Ltd., Tokushima, JAPAN. aalso, Fac. of Sci. Tech., Science Univ. Tokyo, Chiba, JAPAN. 

4:30 PM G2.8 
COMPOSITION DEPENDENCE OF THE BAND GAP ENERGY OF InxGa1-xN LAYERS ON GaN (x$\le$0.15) GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION. J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Obloh, and K.-H. Bachem, Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, GERMANY. 

4:45 PM G2.9 
OPTICAL GAIN SPECTRA IN GaN/InGaN QUANTUM WELLS WITH THE COMPOSITIONAL FLUCTUATIONS. Takeshi Uenoyama, Central Research Laboratories, Matsushita Electric Industrial Co., Sourakugun, Kyoto, JAPAN. 

SESSION G3: POSTER SESSION: 
GROWTH AND CHARACTERIZATION 
Chairs: Chihping Kuo Stephen J. Pearton Takeshi Uenoyama and Alan F. Wright 
Monday Evening, November 30, 1998 
8:00 P.M. 
Salons (M)

G3.1 
HYDROGEN AND NITROGEN AMBIENT EFFECTS ON EPITAXIAL LATERAL OVERGROWTH (ELO) OF GaN VIA MOVPE. Kazumasa Hiramatsu, Mie University, Dept of Electrical & Electronic Eng, JAPAN; Kazuyuki Tadatomo, Youichiro Ohuchi, Hiroaki Okagawa, Hirotaka Itoh, Mitsubishi Cable Industries, Ltd., Central Research Laboratory, JAPAN. 

G3.2 
DEPOSITION ROUTES FOR MULTILAYER THIN FILMS AND DEVICE GEOMETRIES USING LATERAL EPITAXIAL GROWTH OF STRUCTURES (LEGOS). T. Gehrke, D.B. Thomson, K.J. Linthicum, P. Rajagopal, P. Hartlieb, T.S. Zheleva, R.F. Davis; Dept of Materials Science and Engineering, North Carolina State University, Raleigh, NC. 

G3.3 
PIEZOELECTRIC EFFECTS IN GaN/AlGaN MULTIPLE QUANTUM WELLS PROBED BY PICOSECOND TIME-RESOLVED PHOTOLUMINESCENCE. H.S. Kim, J.Y. Lin, and H.X. Jiang, Dept of Physics, Kansas State University, Manhattan, KS; W.W. Chow, Sandia National Laboratory, Albuquerque, NM; A. Botchkarev and H. Morkoc, Dept of Electrical Engineering, Virginia Commonwealth University, VA. 

G3.4 
NITRIDATION OF GaAs(001)-2x4 SURFACE STUDIED BY AUGER ELECTRON SPECTROSCOPY. Igor Aksenov, JRCAT-ATP, Tsukuba, Ibaraki, JAPAN: Yoshinobu Nakada, Central Research Institute, Mitsubishi Materials Corporation, Omiya, Saitama, JAPAN; Hajime Okumura, Electrotechnical Laboratory, Tsukuba, Ibaraki, JAPAN. 

G3.5 
LASER ASSISTED III-V CLUSTER REACTION IN CONSTRAINED GAS PULSE EXPANSIONS OF TEGa, TMGa and TMAl WITH NH3. Alexander Demchuk, John Porter, and Brent Koplitz, Department of Chemistry, Tulane University, New Orleans, LA. 

G3.6 
TRANSMISSION ELECTRON MICROSCOPY STUDIES OF GaN and AlGaN THIN FILMS ON Si FOR FIELD EMISSION APPLICATIONS. I. Berishev, A. Bensaoula, Space Vacuum Epitaxy Center, University of Houston, Houston, TX; I. Rusakova, Texas Center for Superconductivity, University of Houston, Houston, TX; A. Karabutov, M. Ugarov and V.P. Ageev, General Physics Institute, Moscow, RUSSIA. 

G3.7 
TEMPERATURE EFFECT ON THE QUALITY OF AlN THIN FILMS. Margarita P. Thompson, Dept of Chemical Engineering and Materials Science; Feng Jin, Gregory Auner, Dept of Electrical and Computer Engineering; Ratna Naik, Dept of Physics, Wayne State University, Detroit, MI; Vaman Naik, Dept of Physics, University of Michigan-Dearborn, Dearborn, MI. 

G3.8 
EPITAXIAL GROWTH AND CHARACTERIZATION OF SINGLE CRYSTALLINE ZnGeN2Long D. Zhu, Paul H. Maruska, Peter E. Norris, NZ Applied Technologies, Woburn, MA; Yingyi Zhu, Chinese Academy of Sciences, Beijing, CHINA; Lee Bouthillette, Pearl W. Yip, Air Force Research Laboratory, Hanscom, MA. 

G3.9 
CUBIC GaN HETEROEPITAXY ON THIN-SiC COVERED Si(001). Yuichi Hiroyama, Masao Tamura, Joint Research Center for Atom Technology - Angstrom Technology Partnership (JRCAT - ATP), Ibaraki, JAPAN. 

G3.10 
INFLUENCE OF ACTIVE NITROGEN SPECIES ON THE NITRIDATION RATE OF SAPPHIRE. A.J. Ptak, Dept of Physics, K.S. Ziemer, Dept of Chemical Engineering, M.R. Millechia, EPI Vacuum Products, C.D. Stinespring, Dept of Chemical Engineering, T.H. Meyers, Dept of Physics, West Virginia Univ, Morgantown, WV. 

G3.11 
STRUCTURAL STUDY OF GAN(AS,P) LAYERS GROWN ON (0001) GAN BY GAS SOURCE MOLECULAR BEAM EPITAXY. In-Tae Bae and Tae-Yeon Seong, Dept. of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju, KOREA; Y. Zhao and C.W. Tu, Dept. of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA. 

G3.12 
GaN GROWTH BY REMOTE PLASMA MOCVD: CHEMISTRY AND KINETICS BY REAL TIME ELLIPSOMETRY. Maria Losurdo, Pio Capezzuto, Giovanni Bruno, Plasma Chemistry Research Center, CNR-MITER, Bari, ITALY. 

G3.13 
DISLOCATION STRUCTURE IN SELECTIVELY GROWN GaN PYRAMIDS ON Si(111). Zhigang Mao, Stuart McKernan, and C. Barry Carter, Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN; Wei Yang and Scott McPherson, Honeywell Technology Center, Honeywell Inc., Plymouth, MN. 

G3.14 
ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATION OF DEEP DEFECTS IN CUBIC GaN ON GaAs. M. Lisker, A. Krtschil, H. Witte, J. Christen, Otto-von-Guericke-Univ. Magdeburg, Instit. fuer Exper. Physik, Magdeburg, GERMANY, D.J. As , B. Schöttker, K. Lischka, Univ. Paderborn, FB 6- Physik, Paderborn, GERMANY. 

G3.15 
PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS. W. Shan, J.W. Ager III, and W. Walukiewicz, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA; E.E. Haller, Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, CA; M.D. McCluskey, N.M. Johnson, and D.P. Bour, Xerox Palo Alto Research Center, Palo Alto, CA. 

G3.16 
DOMAIN STRUCTURE OF THICK GaN LAYERS GROWN BY HYDRIDE VAPOR PHASE EPITAXY. T.Paskova, E.B.Svedberg, L.D.Madsen, R.Yakimova, I.G.Ivanov, A.Henry, B.Monemar, Department of Physics and Measurement Technology, Linkoping University, Linkoping, SWEDEN. 

G3.17 
CHARACTERIZATION

OF Be-IMPLANTED GaN ANNEALED AT HIGH TEMPERATURES. C. Ronning, K.J. Linthicum, E.P. Carlson, P.J. Hartlieb, D.B. Thomson, and R.F. Davis, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC. 

G3.18 
THERMAL RESIDUAL STRESS MODELING IN AlN AND GaN MULTILAYER SAMPLES. Kai Wang, Robert R. Reeber, Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC. 

G3.19 
STRONG PIEZOELECTRIC EFFECTS IN UNSTRAINED GAN QUANTUM WELLS. R. Langer, J. Simon, N.T. Pelekanos, A. Barski, CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, Grenoble, FRANCE. 

G3.20 
X-RAY DIFFRACTION ANALYSIS OF STRESS AND STRAIN DISTRIBUTION IN GaN BASED HETEROSTRUCTURES. T.S. Zheleva, K.W. Kirchner, K.A. Jones, US Army Research Lab - SEDD, Adelphi, MD; K. Matney, Bede Scientific, Denver, CO; R.D. Vispute, T. Venkatesan, MSNE Dept., U. of Maryland, College Park, MD; W.D. Perry, M.D. Bremser, R.F. Davis, MSE Dept., NCSU, Raleigh, NC. 

G3.21 
ANALYSIS OF INHOMOGENEOUS STRAIN IN AlGaN FILMS BY X-RAY DIFFRACTION AND SPATIALLY RESOLVED CATHODOLUMINESCENCE SPECTROSCOPY. L.H. Robins, M.D. Vaudin, National Institute of Standards and Technology, Gaithersburg, MD; D.K. Wickenden, Johns Hopkins University, Applied Physics Laboratory, Laurel, MD. 

G3.22 
OPTICAL ABSORPTION AND RAMAN SPECTROSCOPY OF SINGLE-PHASE AND PHASE-SEPARATED InGaN FILMS. L.H. Robins, National Institute of Standards and Technology, Gaithersburg, MD; C.A. Parker, J.C. Roberts, and S.M. Bedair, North Carolina State University, Dept. of Electrical and Computer Engineering, Raleigh, NC; E.L. Piner and N. A. El-Masry, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC. 

G3.23 
GROWTH OF ORIENTED GALLIUM AND INDIUM NITRIDES ON SAPPHIRE BY PLASMA NITRIDATION OF THIN LIQUID FILMS. Jeffrey S. Dyck, Kathleen Kash, Dept of Physics; Michael T. Grossner, Cliff C. Hayman, Alberto Argoitia, John C. Angus, Dept of Chemical Engineering; Nan Yang, Dept of Materials Science and Engineering; Case Western Reserve University, Cleveland, OH. 

G3.24 
P- AND N-TYPE DOPING OF MBE GROWN CUBIC GaN/GaAs EPILAYERS. D.J. As, T. Simonsmeier, J. Busch, B. Schöttker, M. Lübbers, J. Mimkes, D. Schikora, and K. Lischka, Universität Paderborn, Physik, Paderbon, GERMANY; W. Kriegseis, W. Burkhardt, and B.K. Meyer, Universität Giessen, I. Physik. Inst., Giessen, GERMANY. 

G3.25 
HIGH In CONTENT CUBIC InGaN GROWN BY MOCVD. J.B.Li, Hui Yang, L.X. Zheng, National Research Center for Optoelectronic Technology Institute of Semiconductors, Chinese Academy of Sciences, Beijing, CHINA. 

G3.26 
EXCITONIC RECOMBINATION IN STRAINED AlxGa1-xN ON GaN. G. Steude, D.M. Hofmann, T. Christmann, A. Ekimov, B.K. Meyer, Justus-Liebig-University, Giessen, GERMANY; F. Bertram, J. Christen, University of Magdeburg, GERMANY; A. Goeldner, A. Hoffmann, TU Berlin, GERMANY; I. Akasaki, H. Amano, Meijo University, JAPAN. 

G3.27 
NUCLEATION LAYER MICROSTRUCTURE IN GALLIUM NITRIDE GROWN ON A-PLANE SAPPHIRE. M.E. Twigg, R.L. Henry, A.E. Wickenden, and J.C. Culbertson, Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC. 

G3.28 
DISLOCATION MEDIATED SURFACE STRUCTURES IN GaN. B. Heying, E.J. Tarsa, C.R. Elsass, P. Fini, S.P. DenBaars, J.S. Speck, Univ. of California-Santa Barbara, Dept. of Materials, Santa Barbara, CA. 

G3.29 
THE INTERACTION OF OXYGEN WITH THREADING EDGE AND SCREW DISLOCATIONS IN GAN. J. Elsner, M. Haugk, Th. Frauenheim, Technische Universitat Chemnitz, Chemnitz, GERMANY; R. Jones, University of Exeter, Exeter, UNITED KINGDOM; M.I. Heggie, CPES, University of Sussex, Falmer, Brighton, UNITED KINGDOM; S. Oberg, University of Luleaa, Luleaa, SWEDEN; P.R. Briddon, University of Newcastle upon Tyne, Newcastle, UNITED KINGDOM. 

G3.30 
ELECTRON BEAM INDUCED IMPURITY ELECTRO-MIGRATION IN UNINTENTIONALLY DOPED GAN. Milos Toth and Matthew R. Phillips, Microstructural Analysis Unit, University of Technology, Sydney, AUSTRALIA. 

G3.31 
NEW YELLOW LUMINESCENCE EMISSION IN BULK HVPE GAN. G.Salviati, C.Zanotti-Fregonara, N.Armani, CNR-MASPEC Inst., Parma, ITALY; M.Albrecht, H.P.Strunk, Univ. Erlangen, Inst. fur Werkstoffwissenschaften, Erlangen, GERMANY; F.Demangeot, Univ. Paul Sabatier, Lab. De Physique Des Solides, Toulouse, FRANCE; K.Vassilevski, V.A.Dimitriev*, Phys.Tech-WBG research Group, A.F.Ioffe Institute, St Petersburg, RUSSIA; *also with Howard Univ., Materials Science Research Center of Excellence, Washington, DC. 

G3.32 
EXCITONS IN CUBIC ALGaN. G. Salviati, C. Zanotti-Fregonara, CNR-MASPEC Inst., Parma, ITALY; M. Albrecht, S. Christiansen, H. Strunk, Univ. Erlangen, Inst. für Werkstoffwissenschaften, Erlangen, GERMANY; H. Angerer, O. Ambacher, M. Stutzmann, Tu Muenchen, Walter-Schottky-Institut, Garching, GERMANY. 

G3.33 
THE CONTROL OF HOMOGENEITY AND DEFECTS IN MBE GROWN InGaN AND AlGaN BY SHORT PERIOD SUPERLATTICES. S. Einfeldt, T. Boettcher, K. Vogeler, V. Kirchner, H. Heinke, D. Hommel, Institute of Solid State Physics, University of Bremen, GERMANY, H. Selke, P. L. Ryder, Institute of Materials Physics and Structural Research, University of Bremen, GERMANY, F. Bertram, J. Christen, Institute of Experimental Physics, University of Magdeburg, GERMANY. 

G3.34 
CORRELATION OF RECOMBINATION PROCESSES AND DEFECT STRUCTURE IN Si DOPED AlGaN BY ELECTRON MICROSCOPY RELATED TECHNIQUES. M. Albrecht, Institut für Werkstoffwissenschaften Mikrocharacterisierung, Univ. Erlangen-Nürnberg, GERMANY, A. Cremades, Walter Schottky Institut, Technische Univ. München, GERMANY, Permanent address: Dpto. Fisica de Materiales, Facultad de Fisicas, Univ. Complutense, Madrid, SPAIN, G. Salviati, CNR-MASPEC, Parma, ITALY, J. Krinke, H. P. Strunk, Institut für Werkstoffwissenschaften Mikrocharacterisierung, Univ. Erlangen-Nürenberg, GERMANY, R. Dimitrov, O. Ambacher, M. Stutzmann, Walter Schottky Institut, Technische Univ. München, GERMANY. 

G3.35 
PINHOLES, DISLOCATIONS AND STRAIN RELAXATION IN InGaN. B. Jahnen, M. Albrecht, S. Christiansen, W. Dorsch, H. P. Strunk Institut für Werkstoffwissenschaften, Lehrstuhl VII, Universität Erlangen-Nürnberg, Erlangen, GERMANY; D. Hanser, Robert F. Davis Department of Physics, North Carolina State University, Raleigh, NC. 

G3.36 
FLEXIBLE MOCVD GROWTH PROCESS FOR PRECISE COMPOSITION CONTROL IN InGaN/GaN HETEROSTRUCTURES. H. Protzmann, O. Schoen, M. Schwambera, M. Heuken, H. Juergensen, Aixtron AG, Aachen, GERMANY; M. Bremser, Aixtron Inc., Buffalo Grove, IL. 

G3.37 
RANGES OF METALORGANIC VAPOR PHASE EPITAXY PARAMETERS AND THE OPTIMIZATION FOR GaN FILMS VIA THE TECHNIQUE OF LATERAL EPITAXIAL GROWTH OF STRUCTURES (LEGOS). D. Thomson, T. Gehrke, K.J. Linthicum, P. Rajagopal, P. Hartlieb, T.S. Zheleva, R.F. Davis; Dept of Materials Science and Engineering, North Carolina State University, Raleigh, NC. 

G3.38 
A NOVEL APPROACH FOR LATERAL EPITAXY GROWTH OF GaN STRUCTURES - LEGOS Tsvetanka S. Zheleva*, Darren Thomson, Scott Smith, Pradeep Rajagopal, Kevin Linthicum, Thomas Gehrke and Robert F. Davis, North Carolina State University, Department of MSE, Raleigh, NC. *Present Address: US Army Research Laboratory, AMSRL-SE-EM, Adelpi, MD. 

G3.39 
EFFECTS OF SURFACE PREPARATION ON EPITAXIAL GaN ON 6H-Si DEPOSITED VIA MOCVD. Z.Y. Xie, C.H. Wei, J.H. Edgar, Kansas State Univ, Dept of Chemical Engineering, Manhattan, KS; J. Chaudhuri, G. Jiji, Wichita State Univ, Dept of Mechanical Engineering, Wichita, KS. 

G3.40 
HIGH QUALITY HYDROTHERMAL ZnO CRYSTALS. M. Suscavage, M. Harris, D. Bliss, P. Yip, S.-Q. Wang, D. Schwall, L. Bouthillette, J. Bailey1, M. Callahan1, D.C. Look2, D.C. Reynolds2, R.L. Jones3, and C.W. Litton3 Air Force Research Lab, Sensors Directorate, Hanscom AFB, MA; 1Solid State Scientific Corp. Hollis, NH; 2Wright State Univ., Dayton OH; 3Air Force Research Lab, Materials and Manufacturing Directorate, WPAFB, OH. 

G3.41 
SPATIAL DISTRIBUTION AND POWER DEPENDENCE OF BAND-EDGE AND DEEP LEVEL DEFECT CATHODOLUMINESCENCE IN GaN THIN FILMS. N. Missert, C. H. Seager, J. Han, D. M. Follstaedt, M. H. Crawford, and R. G. Copeland, Sandia National Laboratories, Albuquerque, NM. 

G3.42 
DISORDERING OF InGaN/GaN SUPERLATTICES AFTER HIGH-PRESSURE ANNEALING. M.D. McCluskey, Dept of Physics, Washington State University; L.T. Romano, B.S. Krusor, D. Hofstetter, N.M. Johnson, Xerox PARC; T. Suski, J. Jun; Unipress. 

G3.43 
POLARITY DETERMINATION OF GaN THIN FILMS ON SAPPHIRE(0001) BY X-RAY STANDING WAVES. A. Kazimirov(Northwestern University), M.J. Bedzyk (Northwestern University and Argonne National Laboratory), T.L. Lee, D.L. Marasco (Northwestern University), J. Zegenhagen (Max-Planck Institute - FKF), M. Kelly, H. Angerer, O. Ambacher (Walter-Schottky Institute). 

G3.44 
SYNTHESIS OF METASTABLE GANAS SEMICONDUCTOR FILMS FROM THE DILUTE ARSENIC DOPING LIMIT TO NITROGEN-RICH TERNARY ALLOYS. Maria Gherasimova, B. Gaffey, P. Mitev, and L.J. Guido, Yale University, New Haven, CT; K.L. Chang and K.C. Hsieh, University of Illinois, Urbana, IL. 

G3.45 
SYNTHESIS OF LATTICE MATCHED Cd-In-Ga OXIDES FOR GaN THIN FILM GROWTH. Sy-Chyi Lin, Richard Wilkins, Prairie View A&M University, NASA Center for Applied Radiation Research, Prairie View, TX; Mikael D. Nersesyan, Russian Science of Academy, Institute of Structural Macrokinetics, Moscow, RUSSIA; Dan Luss, University of Houston, Chemical Engineering Department, Houston, TX. 

G3.46 
X-RAY PHOTOEMISSION SPECTROSCOPY STUDY OF OXIDATION OF GAN. N.J. Watkins1, G.W. Wicks2, Y. Gao11Department of Physics and Astronomy, 2The Institute of Optics, University of Rochester, Rochester, NY. 

G3.47 
ANISOTROPIC OPTICAL PROPERTIES OF GaN STUDIED BY GENERALIZED VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY. C.H. Yan, H. Yao, University of Nebraska, Lincoln, NE; J.M. Van Hove, A.M. Wowchak , P.P. Chow, SVT Associates, Eden Prairie, MN; S. P. Denbaars, University of California, Santa Barbara, CA; J.M. Zavada, US Army Research Office, Research Triangle Park, NC. 

G3.48 
PHOTOLUMINESCENCE

STUDIES IN InGaN/GaN MULTIQUANTUM WELLS GROWN BY MOCVD. Eun-joo Shin, N.W. Song, J.I. Lee, D. Kim, Korea Research Institute of Standards and Sciences, Spectroscopy Group, Taejon, KOREA; D. Lee, Chugnam National Univ, Dept of Physics, Taejon, KOREA; Y. -H. Choi, LG CIT, Optoelectronics Group, Seoul, KOREA; C. -H. Hong, Chonbuk National Univ, SPRC, Chonbuk, KOREA. 

G3.49 
SI DELTA DOPED GaN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION. Jong-Hee Kim, Gye Mo Yang, Sung Chul Choi, Ji Youn Choi, Hyun Kyong Cho, Kee Young Lim, Hyung Jae Lee, Chonbuk National Univ., Semiconductor Physics Research Center/Dept. of Semiconductor Science and Technology. 

G3.50 
INFLUENCE OF THE FIRST PREPARATION STEPS ON THE PROPERTIES OF GaN LAYERS GROWN ON 6H-SiC BY MBE. Roberta Lantier, Angela Rizzi, D. Guggi, G. Crecelius, Hans L$\ddot{\rm u}$th, Forschungszentrum J$\ddot{\rm u}$lich, Institut f$\ddot{\rm u}$r Schicht- und Ionentechnik, J$\ddot{\rm u}$lich, GERMANY; Giuliano Colì , Roberto Cingolani, Università di Lecce, Istituto Nazionale Fisica della Materia e Dipartimento Scienza dei Materiali, Lecce, ITALY; Brigitte Neubauer, Dagmar Gerthsen, Universit$\ddot{\rm a}$t Karlsruhe, Laboratorium f$\ddot{\rm u}$r Elektronenmikroskopie, Karlsruhe, GERMANY. 

G3.51 
A STUDY ON In INCORPORATION AND PHASE SEPARATION IN InGaN THIN FILMS GROWN BY REMOTE PLASMA ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITION. Hyun Jin Kim, Min Hong Kim, Feng Qi, Hyunseok Na, and Euijoon Yoon, School of Materials Science and Engineering, Seoul National University, Seoul, KOREA. 

G3.52 
GROWTH OF GaN AND AlN BY LOW ENERGY SPUTTER DEPOSITION. A.J. Drehman, S.-Q. Wang, P.W. Yip, Air Force Research Laboratory, Hanscom AFB, MA. 

G3.53 
CHARACTERIZATION

OF HIGH-QUALITY GaN EPILAYERS GROWN ON Si(111) WITH A NEW MOCVD REACTOR. Yungeng Gao, Daniel Gulino, Dept of Chemical Engineering and Condensed Matter and Surface Science Program Ohio Univ, Athens, OH; Ryan Higgins, Condensed Matter and Surface Science Program, Ohio Univ, Athens, OH. 

G3.54 
MOCVD GROWTH OF GaN LAYERS ON Si SUBSTRATES USING AlAs AND ZnO BUFFER LAYERS - INFLUENCE OF GROWTH PARAMETERS ON THE GaN LUMINESCENCE PROPERTIES. A. Strittmatter, A. Krost, and D. Bimberg, Inst. f. Festkoerperphysik, Technische Universitaet Berlin, GERMANY; T. Hempel, J. Blasing, and J. Christen, Inst. f. Experimentelle Physik, Otto-v.-Guericke Universitaet Magdeburg, GERMANY. 

G3.55 
EPITAXIAL LATERAL OVERGROWTH OF GaN BY HYDRIDE VPE : TOWARDS SUBSTRATES FOR DEVICE STRUCTURES. O. Parillaud, V. Wagner, H.J. Buehlmann, M. Ilegems, Institute for Micro and Optoelectronics, Swiss Federal Institute of Technology, Lausanne, SWITZERLAND. 

G3.56 
STRUCTURE OF MOVPE DEPOSITED AlN ON Si(111). Eric Rehder, M. Zhou, L. Zhang, N.R. Perkins, S.E. Babcock, T.F. Kuech; Dept of Materials Science and Dept of Chemical Engineering, University of Wisconsin-Madison, Madison, WI. 

G3.57 
INFLUENCE OF DOPING ON THE LATTICE DYNAMICS GaN. A. Kaschner, H. Siegle, A. Hoffmann, C. Thomsen, Institut fur Festkerperphysik, TU Berlin, Hardenbergstrasse Berlin, GERMANY; U. Birkle, S. Einfeldt, D. Hommel, Institut fur Festkerperphysik, Universitat Bremen, Bremen, GERMANY. 

G3.58 
Abstract Withdrawn. 

G3.59 
MOLECULAR BEAM EPITAXY OF HIGH QUALITY InGaN ALLOYS USING AMMONIA: OPTICAL AND STRUCTURAL PROPERTIES. Jean Massies, Nicolas Grandjean, Mathieu Leroux, Marguerite Lagt, Gerard Neu, CRHEA-CNRS, Valbonne, FRANCE; Pierre Ruterana, LERMAT-CNRS, Caen, FRANCE. 

G3.60 
PROPERTIES OF EPITAXIAL ZnO THIN FILMS FOR GaN AND RELATED APPLICATIONS. H. Shen, M. Wraback, and J. Pamulapati, U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, Adelphi, MD; S. Liang, C. Gorla, and Y. Lu, College of Engineering, Rutgers University, Piscataway, NJ. 

G3.61 
COMPARATIVE GROWTH OF AlN ON SINGULAR AND OFF-AXIS 6H AND 4H-SiC BY MOCVD. Sylvia Wilson, Corey Dickens, Michael G. Spencer, James Griffin, Howard Univ, Materials Science Research Center of Excellence, Washington, DC. 

G3.62 
GALLIUM NITRIDE GROWTH USING DIETHYLGALLIUM CHLORIDE AS AN ALTERNATIVE GALLIUM SOURCE. Ling Zhang, Rong Zhang, T.F. Kuech, Department of Chemical Engineering, University of Wisconsin, Madison, WI; Marek P. Boleslawski, Aldrich Chemical, Milwaukee, WI. 

G3.63 
OPTICAL PROPETIES OF HVPE GROWN III-NITRIDES: GaN BULKS AND Al(Ga)N THIN LAYERS. Andrei S. Zubrilov, Yuri V. Melnik, Andrei E. Nikolaev, Denis V. Tsvetkov, Sergrei G. Stepanov, Irina P. Nikitina, Alexander I. Babanin, Phys Tech WBG Research Group, Ioffe Inst St.-Petersburg, RUSSIA; Vladimir V. Tretyakov, Maya A. Jakobson, Dmitri K. Nelson, Ioffe Inst St.-Petersburg, RUSSIA; Vladimir A. Dmitriev1,2 1Howard University, MSRCE, Washington, DC; 2TDI, Inc., Gaithersburg, MD. 

G3.64 
PIEZOELECTRIC DOPING IN AlGaN/GaN HETEROSTRUCTURES WITH ABRUPT AND GRADED INTERFACES. Alexei D. Bykhovski, University of Virginia, Dept of Electrical Engineering, Charlottesville, VA; Remis Gaska, APA Optics, Inc., Blaine, MN; Michael S. Shur, Rensselaer Polytechnic Institute, Dept of Electrical, Computer and System Engineering, Troy, NY. 

G3.65 
ACCURATE DETERMINATION OF As COMPOSTION DEPTH PROFILES IN GaAsN FILMS USING SIMS AND RBS. Salman Mitha, Chris Huang, and Joseph F. Kirchoff, Charles Evans and Associates, Redwood City, CA; Louis J. Guido, Dept of EE and App Physics, Yale University, New Haven, CT. 

G3.66 
PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS. C. Wetzel, T. Takeuchi, S. Yamaguchi, T. Detchprohm, H. Amano, and I. Akasaki, High Tech Research Center and Dept of Electrical and Electronic Engineering, Meijo University, Tempaku-ku, Nagoya, JAPAN. 

G3.67 
PHOTOLUMINESCENCE

EXCITATION SPECTROSCOPY OF CARBON-DOPED GALLIUM NITRIDE. Erik Reuter, Stephen Bishop, Univ. of Illinois, Microelectronics Lab, Urbana, IL; Rong Zhang, Thomas Kuech, Univ. of Wisconsin, Dept. of Chemical Engineering, Madison, WI.