1998 MRS Fall Meeting & Exhibit

* Invited paper

SESSION H1: III-V INFRARED LASERS AND MATERIALS - I 
Chair: Steven R. Kurtz 
Tuesday Morning, December 1, 1998 
Wellesley (M)

8:30 AM *H1.1 
ROOM TEMPERATURE MID-INFRARED QUANTUM WELL LASERS FOR GAS ANALYSIS. Alexei N. Baranov, Yves Rouillard, Yvan Cuminal, Guilhem Boissier, Jean-Christophe Nicolas, Philippe Christol, Andre Joullie, and Claude Alibert, Montpellier University, Montpellier, FRANCE. 

9:00 AM H1.2 
CHARACTERIZATION OF HIGH-TEMPERATURE OPTICALLY-PUMPED MID-INFRARED W-LASERS. W.W. Bewley, C.L. Felix, E.H. Aifer, I. Vurgaftman, L.J. Olafsen, J.R. Meyer and M.J. Yang , Naval Research Laboratory, Washington, DC; H. Lee, R.U. Martinelli and J.C. Connolly, Sarnoff Corporation, Princeton, NJ; A.R. Sugg and G.H. Olsen, Sensors Unlimited, Inc., Princeton, NJ. 

9:15 AM H1.3 
DESIGN AND MODELING OF MID-IR TYPE-II INTERBAND CASCADE LASERS. Rui Q. Yang and Yao-Ming Mu, Space Vacuum Epitaxy Center, Univ. of Houston, Houston, TX. 

9:30 AM H1.4 
HIGH-POWER OPTICALLY PUMPED TYPE-II QUANTUM-WELL LASERS. Chih-Hsiang Lin, S. J. Murry, C. H. Kuo, Jun Zheng, and S. S. Pei, Space Vacuum Epitaxy Center, Univ. of Houston, TX; H. Q. Le, MIT Lincoln Laboratory, MA. 

9:45 AM BREAK 

10:15 AM *H1.5 
ULTRAFAST MEASUREMENTS OF OPTICAL PROPERTIES AND CARRIER DYNAMICS IN MID-IR SEMICONDUCTOR LASER MATERIALS. Thomas F. Boggess, Michael E. Flatté, T. C. Hasenberg, S. A. Anson, D.-J. Jang, J. T. Olesberg, and B. J. Brown, Optical Science and Technology Center, Department of Physics and Astronomy, The University of Iowa, Iowa City, IA. 

10:45 AM H1.6 
SUPPRESSION OF NON-RADIATIVE SCATTERING PROCESSES IN NARROW GAP SEMICONDUCTORS. C.R. Pidgeon, Department of Physics, Heriot Watt University, Edinburgh, UK; B N Murdin, Department of Physics, University of Surrey, Guildford, UK. 

11:00 AM H1.7 
COMPARISON OF ACTIVE REGIONS FOR MID-INFRARED LASER DIODES. J. T. Olesberg, Michael E. Flatte, B. J. Brown, T. C. Hasenberg, S. A. Anson, Thomas F. Boggess, The University of Iowa, Iowa City, IA; C. H. Grein, The University of Illinois at Chicago, Chicago, IL. 

11:15 AM H1.8 
IMPROVED DEVICE PERFORMANCE FROM MBE GROWN InSb/InAlSb DIODES: EFFECT OF GROWTH ONTO VICINAL InSb(100) SUBSTRATES. A.D. Johnson, A.B.J. Smout, J.W. Cairns, G.J. Pryce, A.J. Pidduck, T. Ashley and C.T. Elliott, DERA, Great Malvern, UK. M.S.M. Lamb, Wafer Technology Ltd, Tongwell, UK. 

11:30 AM H1.9 
THEORY OF AUGER RECOMBINATION IN TYPE II STRAINED QWS FOR MID-INFRARED LASER APPLICATIONS. A.D. AndreevA.F. Ioffe Institute, St. Petersburg, RUSSIA. 

11:45 AM H1.10 
COMPARISON OF AUGER RECOMBINATION AND INTERVALENCE BAND ABSORPTION IN TYPE I AND TYPE II Sb-BASED LASER STRUCTURES. L.T. Heen, Center for Technology at Kjeller, Kjeller, NORWAY; H.P. Hjalmarson, Sandia National Laboratories, Albuquerque, NM. 

SESSION H2: III-V INFRARED LASERS AND MATERIALS - II 
Chair: Jerry R. Meyer 
Tuesday Afternoon, December 1, 1998 
Wellesley (M)

1:30 PM *H2.1 
HIGH POWER AND TUNABLE SINGLE-MODE QUANTUM CASCADE LASERS. Claire Gmachl, Federico Capasso, Alessandro Tredicucci, Deborah L. Sivco, James N. Baillargeon, Albert L. Hutchinson, and Alfred Y. Cho, Bell Laboratories, Lucent Technologies, Murray Hill, NJ . 

2:00 PM H2.2 
CHIRPED SUPERLATTICE QUANTUM CASCADE LASERS. Alessandro Tredicucci, Federico Capasso, Claire Gmachl, Deborah L. Sivco, Albert L. Hutchinson, and Alfred Y. Cho, Bell Labs, Lucent Technologies, Murray Hill, NJ. 

2:15 PM H2.3 
THE CARRIER DYNAMICS OF FAR-INFRARED INTERSUBBAND LASERS AND TUNABLE EMITTERS. P. Harrison, R. W. Kelsall, P. Kinsler, and K. Donovan, Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, UNITED KINGDOM. 

2:30 PM H2.4 
PROGRESS TOWARDS CONTINUOUS-WAVE OPERATION OF FAR-INFRARED GERMANIUM HOT HOLE LASERS. Danielle R. Chamberlin, Erik Bruendermann, E.E. Haller, Univ of California-Berkeley and Lawrence Berkeley National Laboratory, Berkeley, CA. 

2:45 PM BREAK 

3:15 PM *H2.5 
HIGH-POWER, HIGH-EFFICIENCY QUASI-CW 4-m Sb-BASED LASER. H.Q. Le, G.W. Turner, S. Buchter, and J.L. Daneu, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA; C.H. Lin and S.S. Pei, Space Vacuum Epitaxy Center, University of Houston, Houston, TX. 

3:45 PM H2.6 
THE GROWTH OF NOVEL MID-INFRARED EMITTERS BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION. R. M. Biefeld, S. R. Kurtz, K. C. Baucom, and A. A.Allerman, Sandia National Laboratories, Albuquerque, NM. 

4:00 PM H2.7 
STRUCTURAL AND OPTICAL STUDIES OF InAsSb/ InAlAsSb QUANTUM WELLS FOR USE IN MID-IR LASERS. T. Martin, M.T. Emeny, M.J. Kane, P.D.J. Calcott, D.J. Wallis, G.M. Williams and D.R. Wight. 

4:15 PM H2.8 
STM AND TEM CHARACTERIZATION OF InAs/InGaSb/InAs/AlSb LASER INTERFACES. W. Barvosa-Carter, M.E. Twigg, M.-J. Yang, and L.J. Whitman, Naval Research Laboratory, Washington, DC. 

4:30 PM H2.9 
XSTM CHARACTERIZATION OF Sb SEGREGATION IN GaInSb/InAs SUPERLATTICES. J. Harper and M. Weimer, Department of Physics, Texas AM University, College Station, TX; Chih-Hsiang Lin and S.S. Pei, Space Vacuum Epitaxy Center, University of Houston, Houston, TX. 

4:45 PM H2.10 
ICP ETCHING OF GROUP-III ANTIMONIDES IN BCl₃/Ar, Cl₂/Ar and BCl₃/Cl₂/Ar CHEMISTRIES. Lei Zhang, Luke F. Lester, Univ of New Mexico, Center for High Technology Materials, Albuquerque, NM; Randy J. Shul, Andrew Allerman, Christi G. Willison, Sandia National Laboratories, Albuquerque, NM; Jin Hong, Steve J. Pearton, Univ of Florida, Department of Materials Science and Engineering, Gainesville, FL; Richard L. Leavitt, Army Research Laboratory, Adelphi, MD. 

SESSION H3: THERMOPHOTOVOLTAICS (TPVs) AND SUBSTRATE MISMATCHED GROWTH 
Chair: Robert M. Biefeld 
Wednesday Morning, December 2, 1998 
Wellesley (M)

8:30 AM *H3.1 
RECENT PROGRESS IN LOW TEMPERATURE RADIATOR THERMOPHOTOVOLTAIC ENERGY CONVERSION. Greg W. Charache, Lockheed Martin Corp., Schenectady, NY; Chris S. Murray, Bettis Power Laboratory, West Mifflin, PA. 

9:00 AM H3.2 
LIMITING PHASE SEPARATION IN EPITAXIAL GaInAsSb. C.A. Wang, S.L. Ransom, D.C. Oakley, H.K. Choi, MIT Lincoln Laboratory, Lexington, MA; G.W. Charache, Lockheed Martin Corporation, Schenectady, NY. 

9:15 AM H3.3 
ATOMIC ORDERING AND TEMPERATURE-DEPENDENT TRANSIENT PHOTOCONDUCTIVITY IN Ga_0.47In_0.53As EPITAXIAL FILMS. S. P. Ahrenkiel, S. W. Johnston, R. K. Ahrenkiel, H. R. Moutinho, D. J. Arent, M. C. Hanna, M. W. Wanlass, National Renewable Energy Laboratory, Golden, CO. 

9:30 AM H3.4 
FIRST PRINCIPLES MODELING OF SEMICONDUCTOR OPTICAL PROPERTIES, WITH DEVICE APPLICATIONS. Clint B. Geller, Bettis Atomic Power Laboratory, West Mifflin, PA; Walter Wolf, Molecular Simulations S.a.r.l., Orsay, FRANCE; Thomas S. Blazeck, Bettis Atomic Power Laboratory, West Mifflin, PA; Lalitha Subramanian, Juergen Sticht, Molecular Simulations Inc., San Dieg, CA; Wolfgang Mannstadt, Arthur J. Freeman, Northwestern Univ, Evanston IL; Erich Wimmer, Molecular Simulations S.a.r.l., Orsay, FRANCE. 

9:45 AM BREAK 

10:15 AM H3.5 
BULK CRYSTAL GROWTH OF ANTIMONIDE BASED III-V COMPOUNDS FOR TPV APPLICATIONS. P.S. Dutta, A.G. Ostrogorsky,Rensselaer Polytechnic Institute, Department of Mechanical Engineering, Aeronautical Engineering and Mechanics, Troy, NY. 

10:30 AM H3.6 
MODULATED BEAM MASS SPECTROMETRY STUDY OF THE DECOMPOSITION AND GROWTH MECHANISMS OF GALLIUM ANTIMONIDE BY CHEMICAL BEAM EPITAXY USING TRI-ISOPROPYL GALLIUM (TIPGA) AND TRISDIMETHYLAMINO ANTIMONY (TDMASB) PRECURSORS. J.O. Maclean and T. Martin, Electronic and Optical Materials Centre, Defence and Evaluation Research Agency (DERA) Malvern, Great Malvern, Worcestershire, UNITED KINGDOM. 

10:45 AM H3.7 
LINE-OF-SIGHT MASS SPECTROMETRY AS AN IN-SITU SENSOR FOR CONTROLLING SB-BASED III-V SEMICONDUCTOR MATERIAL GROWTH. Q.-H. Xie and J.E. Van Nostrand, Air Force Base, OH. 

11:00 AM H3.8 
THEORETICAL PREDICTION OF THE PLASMA FREQUENCY AND MOSS BURSTEIN SHIFTS FOR DEGENERATELY DOPED In_xGa_1-xAs and InP_yAs_1-y. J.E. Raynolds¹, C.B. Geller², G.W. Charache¹, T. Holden³, and F.H. Pollak³; ¹Lockheed Martin Corp., Schenectady, NY; ²Bettis Atomic Power Laboratory, West Mifflin, PA; ³Physics Dept. and NYS Center for Advanced Technology in Ultrafast Photonic and Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY. 

11:15 AM H3.9 
MOCVD GROWTH OF HIGH MOBILITY InSb FOR MAGNETORESISTIVE DEVICES USING A HIGHLY RESISTIVE InAlSb BUFFER LAYER. M.W. Pelczynski, J.J. Heremans, S. Schwed, R.F. Karlicek Jr., M.G. Brown, Emcore Corporation, Somerset, NJ. 

11:30 AM H3.10 
OPTICAL CHARACTERIZATION OF EPITAXIAL GaSb/GaAs GROWN BY METALORGANIC MAGNETRON SPUTTERING. Z.C. Feng, S.C. Chua, Institute of Materials Research & Engineering, Kent Ridge, SINGAPORE; S. Perkowitz, Emory Univ., Phys. Dept., Atlanta, GA; J.B. Webb, National Res. Council Canada, Ottawa, CANADA. 

11:45 AM H3.11 
INFRARED AND RAMAN SPECTROSCOPIC ANALYSIS ON MOCVD-GROWN InSb/GaAs. T.R. Yang, National Taiwan Normal Univ, Physics Dept, Taipei, ROC; Z.C. Feng, S. J. Chua, Institute of Materials Research & Engineering, Kent Ridge, SINGAPORE; Y.K. Chyan, National Taiwan Normal Univ, Physics Dept, Taipei, ROC; I. Ferguson, EMCORE Corp., Somerset, NJ. 

SESSION H4: INFRARED DETECTORS AND MATERIALS (III-V AND UNCOOLED) 
Chair: Andrew D. Johnson 
Wednesday Afternoon, December 2, 1998 
Wellesley (M)

1:30 PM *H4.1 
MATERIALS FOR MICROMACHINED ARRAYS OF UNCOOLED INFRARED DETECTORS AND INFRARED EMITTERS. R.E. Higashi, B.E. Cole and R.A. Wood. 

2:00 PM *H4.2 
RECENT DEVELOPMENTS IN QUANTUM WELL INFRARED PHOTOCONDUCTORS. S. D. Gunapala Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA. 

2:30 PM H4.3 
TWO-STACK TWO-COLOR STRAIN COMPENSATED QUANTUM WELL INFRARED PHOTODETECTOR USING InP TECHNOLOGY. S. Maimon, G. M. Cohen, E. Finkman , G. Bahir, D. Ritter, Dept. of Electrical Engineering and Solid State Inst., Technion ñ Israel Institute of Technology, ISRAEL; S. E. Schacham, Dept. of Electrical and Electronic Engineering, College of Judea and Samaria, Ariel, ISRAEL. 

2:45 PM BREAK 

3:15 PM *H4.4 
MBE GROWTH OF InAs/(GAIN)Sb SUPERLATTICE PHOTODIODES. J. Schmitz, F. Fuchs, N. Herres, W. Pletschen, J. Wagner, M. Walther, Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, GERMANY. 

3:45 PM H4.5 
ELECTRON IRRADIATION EFFECTS ON INTERSUBBAND TRANSITIONS IN InGaAs/AlGaAs MULTIPLE QUANTUM WELLS. M. O. Manasreh*, A. M. Mousalitin**, and D. R. Khokhlov***, *Air Force Research Laboratory (AFRL/VSSS), Kirtland AFB, NM; **Moscow Institute of Steel and Alloys, Moscow, RUSSIA; ***Physics Department, Moscow State University, Moscow, RUSSIA. 

4:00 PM H4.6 
InAs/(GAIN)Sb INFRARED SUPERLATTICE PHOTODIODES: CORRELATION BETWEEN SURFACE MORPHOLOGY AND ELECTRICAL PERFORMANCE. F. Fuchs, L. Bürkle, S. Müller, W. Pletschen, J. Schmitz, and M. Walther, Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Freiburg, GERMANY. 

4:15 PM H4.7 
INTERMIXING INDUCED TUNABILITY OF INTERSUBLEVEL TRANSITIONS IN InGaAs/GaAs QUANTUM DOTS. R. Leon, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA; S. Fafard and P.G. Piva, Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, CANADA; S. Ruvimov and Z. Liliental-Weber, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA. 

4:30 PM H4.8 
REFLECTANCE AND PHOTOREFLECTANCE STUDY OF Al_0.4Ga_0.6Sb/GaSb SINGLE QUANTUM WELLS. R. Ferrini, M. Geddo, G. Guizzetti, M. Patrini, INFM - Univ. Pavia, Dept. of Physics, Pavia, ITALY; S. Franchi, C. Bocchi, CNR-MASPEC Institute, Parma, ITALY; E. Kh. Moukhamedjanov, A. V.Shubnikov's Institute of Crystallography of Russian Academy of Sciences, Moscow, RUSSIA; A. Baraldi, R. Magnanini, INFM - Univ. Parma, Dept. of Physics, Parma, ITALY. 

4:45 PM H4.9 
INVESTIGATION OF THE STRAIN RELAXATION PROCESS OF AlSb THIN FILMS GROWN ON GaSb USING ROOM TEMPERATURE SPECTROSCOPIC ELLIPSOMETRY, X-RAY, AND TRANSMISSION ELECTRON MICROSCOPY. Wendy L. Sarney, L. Salamanca-Riba, University of Maryland, College Park, Dept. of Materials and Nuclear Engineering, College Park, MD; John D. Bruno, U.S. Army Research Laboratory, Adelphi, MD. 

SESSION H5: II-VI LASERS AND NEW IR MATERIALS 
Chair: M. O. Manasreh 
Thursday Morning, December 3, 1998 
Wellesley (M)

8:30 AM H5.1 
A NEW MID-INFRARED DIODE LASER ON GaSb. Z. Shi, ECE, University of Oklahoma, Norman, OK; X. Fang, P.J. McCann, School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK; S. Chung, M.B. Santos, Department of Physics and Astronomy. 

8:45 AM H5.2 
FABRICATIION OF LEAD SALT-BASED BRAGG MIRRORS AND MICROCAVITIES FOR 4 TO 7 MICROMETER MID-INFRARED DIODE LASERS USING MOLECULAR BEAM EPITAXY. G. Springholz, T. Schwarzl, and W. Heiss, Institut fuer Halbleiterphysik, University of Linz, Linz, AUSTRIA. 

9:00 AM H5.3 
CHROMIUM DOPED CADMIUM MANGANESE TELLURIDE: A NEW MATERIAL FOR FOR TUNABLE MID-INFRARED LASING. S.W. Kutcher, S.B. Trivedi, R.J. Chen, C.C. Wang, and H. Zong, Brimrose Corporation of America, Baltimore, MD; U. Hommerich, Jae Tae Seo, Matthew Turner and K. Mims, RCOP, Dept.of Physics, Hampton University, Hampton, VA; Phillip R. Boyd and Wayne Tardiff, Army Research Laboratory, Electro-Opitcs and Photonics Division, Adelphi, MD. 

9:15 AM H5.4 
II-VI INFRARED VCSEL WITH 2 POSTGROWTH EVAPORATED DIELECTRIC MIRRORS. C. Roux, P. Filloux, E. Hadji, J.-L. Pautrat Departement de Recherche Fondamentale sur la Matiere Condensee CEA-Grenoble, Grenoble, FRANCE. 

9:30 AM H5.5 
METALLURGICAL BONDING OF (100)-ORIENTED LEAD SELENIDE EPILAYERS TO COPPER AND FABRICATION OF CLEAVED FABRY-PEROT CAVITIES. Denton Wade McAlister, Chun-Pang Li, Xiao-Ming Fang, Khosrow Namjou, Patrick J. McCann, Univ of Oklahoma, Dept of Electrical and Computer Engineering, Norman, OK. 

9:45 AM BREAK 

10:15 AM H5.6 
Sn_xGe_1-x ALLOYS: A NOVEL MATERIAL FOR THE MONOLITHIC INTEGRATION OF INFRARED DETECTORS WITH Si(001). Regina Ragan, Gang He, and Harry A. Atwater, California Institute of Technology, Dept of Applied Physics, Pasadena, CA; Kathleen Meehan, Optoelectronic Solutions, Indiana, PA. 

10:30 AM H5.7 
P-TYPE CuAlO₂ AND OTHER IR-TRANSPARENT, ELECTRICALLY-CONDUCTIVE COATINGS DEPOSITED BY MAGNETRON SPUTTERING. Linda F. Johnson and Mark B. Moran, Naval Air Warfare Center Weapons Division, Research and Technology Group, China Lake, CA. 

10:45 AM H5.8 
OPTICAL STUDY AND CHARACTERIZATION OF GaAs_1-xSb_x/GaAs EPITAXIAL LAYERS. R. Ferrini, G. Guizzetti, M. Patrini, INFM - Univ. Pavia, Dept. of Physics, Pavia, ITALY; S. Franchi, C. Bocchi, E. Germini, CNR-MASPEC Institute, Parma, ITALY; A. Baraldi, R. Magnanini, INFM - Univ. Parma, Dept. of Physics, Parma, ITALY. 

SESSION H6: IN-ROOM POSTERS: 
INFRARED SEMICONDUCTORS 
Thursday Morning, December 3, 1998 
11:00 A.M. 
Simmons (M)

H6.1 
SEMICONDUCTING GLASSES BASED ON GERMANIUM AND ARSENIC SULPHOSELENIDES FOR IR OPTICAL FIBERS AND SENSORS. Andrij P. Kovalskiy, Roman Ya. Golovchak, SRC Carat, Inst of Materials, Lviv, UKRAINE; Oleg I. Shpotyuk, SRC Carat, Inst of Materials, Lviv, UKRAINE and Pedagogical Univ, Physics Institute, Czestochowa, POLAND. 

H6.2 
FURTHER STUDIES ON A NEW-TYPE DIODE WITH AN ENHANCED ABSORPTION OF INFRARED LIGHT. Jianming Li, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, CHINA. 

H6.3 
LOW (<10 ⁶ CM^-2) DISLOCATION DENSITIES IN EPITAXIAL LEAD-SALT ON Si(111) LAYERS BY MULTIPLE ANNEALS. Hans Zogg, Joachim John, Karim Alchalabi, Thin Film Physics Group, Institute of Quantum Electronics, Swiss Federal Institute of Technology (ETH), Zurich, SWITZERLAND. 

H6.4 
PHOTOCONDUCTIVE DETECTORS BASED ON CdHgTe GRADED-BAND-GAP SOLID SOLUTIONS: THEORETICAL INVESTIGATION. V.G.Savitskii, B.S.Sokolovskii, V.K.Pysarevskii, O.V.Nemolovskii, Ivan Franko State University, Institute of Applied Physics, Lviv, UKRAINE. 

H6.5 
CARBIDE-SILICIDE SEMICONDUCTOR MATERIAL FOR INFRARED DETECTORS. Sergiy A. Mulenko, Mykhailo M. Nischenko, Institute of Metal Physics, Kyiv, UKRAINE, Volodymyr S. Ovechko, Kyiv Taras Shevschenko University, Kyiv, UKRAINE. 

H6.6 
MOLECULAR BEAM EPITAXY OF A PbSe-BASED VCSEL STRUCTURE ON BaF₂(111). X.M. Fang, Z. Shi, H.Z. Wu, P.J. McCann, School of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK; N. Dai, Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK. 

H6.7 
XPS STUDY OF BONDING AT GaSb/PbSe INTERFACE. X.M. Fang, Z. Shi, P.J. McCann, School of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK; S.J. Chung, M.B. Santos, Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK. 

H6.8 
MBE GROWTH AND OPTICAL CHARACTERIZATION OF ZnMnSe MATERIALS. T.R. Yang, C.C. Lu, Department of Physics, National Taiwan Normal University, Taipei, Taiwan, REPUBLIC OF CHINA; W.C. Chou, Department of Physics, Chung Yuan Christian University, Chungli, Taiwan, REPUBLIC OF CHINA; Z.C. Feng, Institute of Materials Research & Engineering, SINGAPORE. 

H6.9 
OBTAINING, PROPERTIES AND APPLICATION OF ZN_1-XMG_XSE SINGLE CRYSTALS AS MULTIFUNCTIONAL IR OPTICAL ELEMENTS. Yu.A. Zagoruiko, O.A. Fedorenko, P.V. Mateichenko, A.G. Fedorov, T.S. Teplitskaya, Institute for Single Crystals, Kharkov, UKRAINE. 

H6.10 
FAST NEUTRON IRRADIATION EFFECT ON INTERBAND TRANSITIONS IN InGaAs/AlGaAs MULTIPLE QUANTUM WELLS. M. O. Manasreh^* and S. Subramanian^**, ^*Air Force Research Lab (AFRL/VSSS), Kirtland AFB, NM. ^**Department of Electrical and Computer Engineering, Oregon State University, Corvallis, OR. 

H6.11 
THEORETICAL STUDY OF INFRARED OPTICAL TRANSITIONS IN InAs-BASED QDS. A.D. Andreev A.F. Ioffe Institute, St. Petersburg, RUSSIA. 

SESSION H7: INFRARED DETECTOR MATERIALS (II-VI) 
Chair: Marion B. Reine 
Thursday Afternoon, December 3, 1998 
Wellesley (M)

1:30 PM *H7.1 
PROGRESS IN BANDGAP-ENGINEERING OF HgCdTe BY MOVPE FOR ADVANCED IR DETECTOR ARRAYS. Pradip Mitra, Francine Case, Lockheed Martin Vought Systems, Dallas, TX; Marion Reine, Lockheed Martin IR Imaging Systems, Lexington, MA. 

2:00 PM H7.2 
X-RAY PHOTOELECTRON SPECTROSCOPY STUDY OF HgCdTe SURFACES PREPARED WITH ATOMIC HYDROGEN. R. Haakenaasen, T. Colin, S. Lovold, Norwegian Defense Research Establishment, Division for Electronics, Kjeller, NORWAY; L.S. Hirsch, T.H. Myers, Dept. of Physics, West Virginia University, Morgantown, WV. 

2:15 PM H7.3 
BONDING OF PbSe GROWN BY MBE ON Si (111) AND CHARACTERIZATION OF THE PbSe GROWTH INTERFACE. H.Z. Wu, R. Salas Jr, X.M. Fang, D. McAlister, P.J. McCann, University of Oklahoma, Norman, OK. 

2:30 PM H7.4 
PHOTOVOLTAIC LEAD-SALT ON SILICON IR-SENSORS FOR THE MWIR: EXPERIMENTAL VS THEORETICAL PERFORMANCE. Joachim John, Hans Zogg, Karim Alchalabi, Yordan Athanassov, Thin Film Physics Group, Institute of Quantum Electronics, Swiss Federal Institute of Technology (ETH), Zurich, SWITZERLAND. 

2:45 PM BREAK 

3:15 PM *H7.5 
MBE-HgCdTe TECHNOLOGY FOR ADVANCED INFRARED DETECTORS. Rajesh D. Rajavel, Hughes Research Laboratory, Malibu, CA. 

3:45 PM H7.6 
ANALYSIS OF MULTIBAND CONDUCTION IN HgCdTe MBE FILMS FROM VARIABLE MAGNETIC FIELD HALL MEASUREMENTS. Yongsheng Gui, Biao Li, Guozhen Zheng, Li He and Junhao Chu, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, CHINA. 

4:00 PM H7.7 
GROWTH AND CHARACTERIZATION OF CdZnTe(211)B/Si(211) - ALTERNATIVE SUBSTRATES FOR HgCdTe(211)B. David J. Smith, D. Chandrasekhar, S-C-Y. Tsen, Arizona State University, Center for Solid State Science, Tempe AZ; G. Brill, S. Rujiwarat, S. Sivananthan, University of Illinois at Chicago, Microphysics Laboratory, Department of Physics, Chicago IL. 

4:15 PM H7.8 
BAND TO BAND TRANSITION AND OPTICAL CONSTANTS OF Hg_1-xCd_xTe. Junhao Chu, Zhiming Huang, Biao Li, Yong Chang, Yongsheng Gui, Li He and Dingyuan Tang, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, CHINA.