Meetings & Events

1998 MRS Fall Meeting & Exhibit

November 30 - December 4, 1998 | Boston
Meeting Chairs:
 Clyde L. Briant, Eric H. Chason, Howard E. Katz, Yuh Shiohara

Symposium N—Microstructural Processes in Irradiated Materials

-MRS-

Chairs

Rodney Ewing, Univ of Michigan 
Gene Luca,s Univ of California-S Barbara 
James Williams, Australian National Univ 
Steve Zinkle, Oak Ridge National Laboratory

Symposium Support

  • Argonne National Laboratory
  • EPRI
  • Oak Ridge National Laboratory

* Invited paper

SESSION N1: SEMICONDUCTORS 
Chairs: Bent Nielsen and James S. Williams 
Monday Morning, November 30, 1998 
Simmons (M)

8:30 AM *N1.1 
MICROSTRUCTURE EVOLUTION IN LOW-TEMPERATURE, ION-IMPLANTED AlxGa1-xAs. Benjamin W. Lagow, Ian M. Robertson

9:00 AM *N1.2 
SELECTIVE INTERMIXING OF ION IRRADIATED SEMICONDUCTOR HETEROSTRUCTURES. R.D. Goldberg, I.V. Mitchell, P. Piva, Dept of Physics and Astronomy, Univ of Western Ontario, CANADA; H.H. Tan, C. Jagadish, Dept of Electronic Materials Engineering, RSPSE, Australian National Univ; P. Poole, G. Aers, S. Charbonneau, National Research Council of Canada; G.C. Weatherly, Dept of Materials Engineering and Metallurgy, McMaster Univ, CANADA; M.B. Johnston, M. Gal, Dept of Physics, Univ of New South Wales, AUSTRALIA; H. Chen and R. Feenstra, Dept of Physics, Carnegie-Mellon Univ, Pittsburgh, PA. 

9:30 AM N1.3 
MEDIUM-RANGE ORDER IN AMORPHOUS SILICON MADE BY ION-IMPLANTATION. J. Murray Gibson, Paul M. Voyles, University of Illinois, Urbana; Michael M.J. Treacy, NEC Research Institute, NJ; Dale Jacobson, Lucent Bell Laboratories, NJ. 

9:45 AM N1.4 
MEASUREMENT AND MODELLING OF THE RADIATION DAMAGE OF SILICON BY MeV Ag IONS. J.K.N. Lindner, J. Eder, and B. Stritzker, Univ of Augsburg, Augsburg, GERMANY. 

10:00 AM BREAK 

10:30 AM N1.5 
EFFECT OF STRESS AND IMPURITIES ON PREFERENTIAL AMORPHIZATION OF GRAIN BOUNDARIES IN POLYCRYSTALLINE-SILICON. Mitsuhiro Takeda, Somei Ohnuki, Seiichi Watanabe, Hokkaido University, Sapporo, JAPAN; Hiroaki Abe, Hiroshi Naramoto, JAERI, Takasaki, JAPAN; Paul R. Okamoto, Nghi Q. Lam, Argonne National Laboratory, Argonne, IL. 

10:45 AM N1.6 
CATHODOLUMINESCENCE MICROANALYSIS OF ELECTRON IRRADIATION DAMAGE IN WIDE BAND GAP MATERIALS. M.A. Stevens Kalceff, M.R. Phillips and A.R. Moon. Microstructural Analysis Unit, University of Technology, Sydney, AUSTRALIA. 

11:00 AM N1.7 
Li-DEFECT REACTIONS DURING LOW DOSE ION IMPLANTATION OF 8Li INTO ZnSe SINGLE CRYSTALS. Markus Restle, Michael Dalmer, Ulrich Vetter, Hans C. Hofsaess, Fakultaet Physik, Universitaet Konstanz, GERMANY; Ulrich Wahl, Instituut voor Kern- en Stralingsfysica, University of Leuven, BELGIUM; ISOLDE Collaboration, CERN, Geneva, SWITZERLAND. 

11:15 AM *N1.8 
ION-IRRADIATION OF GeSi/Si STRAINED-LAYER HETEROSTRUCTURES. R.G. Elliman and J.M. Glasko, Department of Electronic Materials Engineering, Institute of Advanced Studies, Australian National University, Canberra, AUSTRALIA; J. Zou and D.J.H. Cockayne, Australian Key Centre for Microscopy and Microanalysis and Electron Microscope Unit, University of Sydney, Sydney, AUSTRALIA; J.D. Fitz Gerald, Petrophysics Group, Research School of Earth Sciences, Institute of Advanced Studies, Australian National University, Canberra, AUSTRALIA. 

11:45 AM N1.9 
ORIENTATION AND TEMPERATURE DEPENDENCE OF ELECTRON-INDUCED CRYSTALLIZATION IN Si AND Ge. Eric P. Hollar, Ian M. Robertson, University of Illinois, Dept. of Materials Science and Engineering, Urbana, IL; Igor Jencic, Jure Skvarc, Jozef Stefan Institute, Ljubljana, SLOVENIA. 

SESSION N2: ELECTRONIC MATERIALS AND CERAMICS (FUNDAMENTALS) 
Chairs: Michael Nastasi and Lu-Min Wang 
Monday Afternoon, November 30, 1998 
Simmons (M)

1:30 PM *N2.1 
ION-IRRADIATION EFFECTS IN NONMETALS: AMORPHIZATION, PHASE DECOMPOSITION, AND NANOPARTICLES. A. Meldrum, L.A. Boatner, C.W. White, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN; D.O. Henderson, Fisk University, Nashville, TN. 

2:00 PM N2.2 
RADIATION INDUCED NUCLEATION OF NANOPARTICLES IN SILICA. D. Ila, E.K. Williams, Center for Irradiation of Materials, Alabama A&M University, Normal, AL; D.B. Poker, D.K. Hensley, Solid State Div., Oak Ridge National Laboratory, Oak Ridge, TN; C. Klatt, S. Kalbitzer, Max-Plank-Institut fur Kernphysik, Heidelberg, GERMANY. 

2:15 PM N2.3 
ION IRRADIATION-CONTROLLED NUCLEATION AND GROWTH OF METALLIC CLUSTERS IN GLASS. E. Valentin1,2H. Bernas1, C. Ricolleau3, F. Creuzet41Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Orsay, FRANCE; 2Laboratoire de Recherche CNRS-St. Gobain, Aubervilliers, FRANCE; 3Laboratoire de Mineralogie et Cristallographie, Universite Paris, Paris, FRANCE; 4present address: Corning Research Center, Fontainebleau, FRANCE. 

2:30 PM N2.4 
NANOCRYSTAL GROWTH IN CRYSTALLINE INSULATORS IRRADIATED WITH HIGH-CURRENT Cu- IONS. N. Kishimoto, Y. Takeda, National Research Institute for Metals, Tsukuba, Ibaraki, JAPAN; V.T.Gritsyna, Kharkov State University, Kharkov, UKRAINE; N. Umeda, Tsukuba University, Tsukuba, Ibaraki, JAPAN; C.G. Lee, National Research Institute for Metals, Tsukuba, Ibaraki, JAPAN. 

2:45 PM BREAK 

3:15 PM N2.5 
ACCUMULATION AND RECOVERY OF IRRADIATION EFFECTS IN SILICON CARBIDE. W.J. Weber, W. Jiang, S. Thevuthasan, and D.E. McCready, Pacific Northwest National Laboratory, Richland, WA. 

3:30 PM N2.6 
DOSE RATE DEPENDENCE OF THE AMORPHIZATION OF SILICON CARBIDE. L.L. Snead, S.J. Zinkle, W.S. Eatherly, D.K. Hensley, Oak Ridge National Laboratory, Oak Ridge, TN. 

3:45 PM N2.7 
INTRINSIC STRESS IN ION SYNTHESIZED MATERIALS. Michael Nastasi, Amit Misra, Serge Fayeulle, Harriet Kung, and Terence E. Mitchell, Division of Materials Science and Technology, Los Alamos National Laboratory, Los Alamos, NM. 

4:00 PM N2.8 
ION IRRADIATION-INDUCED DIAMOND FORMATION IN CARBONACEOUS MATERIALS. T. L. Daulton, M. A. Kirk, and, L. E. Rehn, Materials Science Division, Argonne National Laboratory, Argonne, IL; R. S. Lewis, Enrico Fermi Institute, University of Chicago, Chicago, IL. 

4:15 PM N2.9 
IRRADIATION-ENHANCED DIFFUSION IN METALLIC GLASSES. T.Schuler, P. Scharwaechter, and W.F.J. Frank, Max-Planck-Institut fuer Metallforschung and Universitaet Stuttgart, GERMANY. 

4:30 PM N2.10 
EFFECT OF ELECTRON BEAM IRRADIATION ENHANCED DIFFUSION ON W-ALUMINUM OXIDE-Ti/Cu MULTILAYER. Shigemasa Ohta, Heishichiro Takahashi, Center for Advanced Research of Energy Technology, Hokkaido Univ., Sapporo, JAPAN. 

4:45 PM N2.11 
MICROSTRUCTURAL EVOLUTION OF RADIATION-INDUCED DEFECTS IN ZnO DURING ISOCHRONAL ANNEALING. Sebastian Brunner, Werner Puff, Institut für Technische Physik, Technische Universität Graz, Graz, AUSTRIA; Peter Mascher, Dept of Engineering Physics, McMaster University, Hamilton, CANADA; Adam G. Balogh, Dept of Material Science, Technical University Darmstadt, Darmstadt, GERMANY. 

SESSION N3: POSTER SESSION: 
ELECTRONIC MATERIALS AND CERAMICS 
Chairs: Robert G. Elliman Ian M. Robertson and C. Woody White 
Monday Evening, November 30, 1998 
8:00 P.M. 
Salons (M)

N3.1 
DEFECT GENERATION BY PROTON IRRADIATION OF SEMI-INSULATING LEC GaAs. A. Castaldini, A. Cavallini, L. Polenta, C. Canali, F. Nava, INFM and Dipartimento di Fisica, Universita' di Bologna, Bologna, ITALY; E. de la Puente, A. Alvarez, J. Jimenez, Física de la Materia Condensada, ETSII, Universidad de Valladolid, Valladolid, SPAIN. 

N3.2 
IRRADIATION-INDUCED GALLIUM VACANCY-RELATED DEFECTS IN GaAs AND AlxGa1-xAs STUDIED BY OPTICAL DETECTION OF MAGNETIC RESONANCE. F. K. Koschnick, University of Paderborn, Paderborn, GERMANY. 

N3.3 
LOCAL STRUCTURAL CHANGES OF ION DAMAGED InGaAs. Kin Man Yu, Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA. 

N3.4 
A RAMAN SCATTERING, ION CHANNELING AND PHOTOLUMINESCENCE STUDY OF ARGON ION RADIATION DAMAGE IN Cu(Ga,In)Se2 - DOSE DEPENDENCE AND DOSE RATE EFFECTS. G. Lippold, Universität Leipzig, Fakultät für Physik und Geowissenschaften, Leipzig, GERMANY; M.V. Yakushev, R.D. Pilkington, University of Salford, Department of Physics, Salford, UNITED KINGDOM; K. Weinert, W. Grill, Universität Leipzig, Fakultät für Physik und Geowissenschaften, Leipzig, GERMANY; K. Otte, Institut für Oberflächenmodifizierung e.V., Leipzig, GERMANY. 

N3.5 
NON-COLLISIONAL QUANTUM WELL INTERMIXING INDUCED BY HIGH ENERGY ION IMPLANTATION. M. Chicoine, S. Roorda, P. Paki and R. Leonelli, Groupe de recherche en physique et technologie des Couches Minces (GCM) and Universitè de Montrèal; R.A. Masut, GCM and Šcole Polytechnique de Montrèal, Montrèal, Quèbec, CANADA. 

N3.6 
AMORPHIZATION MECHANISM OF Si/Ge SUPERLATTICES UPON ION IMPLANTATION. N.A. Sobolev, Department of Physics, University of Aveiro, PORTUGAL; U. Kaiser, Institute of Solid State Physics, Friedrich Schiller University, Jena, GERMANY; I.I. Khodos, Institute of Microelectronics Technology and High Purity Materials, Chernogolovka, RUSSIA; H. Presting, U. Konig, Daimler Benz Research Center, Ulm, GERMANY. 

N3.7 
CHARACTERIZATION OF THE ELECTRON DENSITY IN Si+-IMPLANTED InP BY MEANS OF RAMAN SCATTERING BY LO-PLASMA COUPLED MODES. J. Ibáñez1, R. Cuscó1, N. Blanco2, G. González-Díaz2, J. Jiménez3, and L. Artús11 Institut Jaume Almera (CSIC), Barcelona, SPAIN; 2 Departamento de Electricidad y Electrónica, Universidad Complutense, Madrid, SPAIN; 3Departamento de Física de la Materia Condensada, Cristalografía y Mineralogía, Escuela Técnica Superior de Ingenieros Industriales, Valladolid, SPAIN. 

N3.8 
THERMAL WAVE ANALYSIS: A TOOL FOR NON-INVASIVE TESTING IN ION BEAM SYNTHESIS OF WIDE BAND GAP MATERIALS. Gerd Teichert, Materialforschungs- und Prüfanstalt Weimar, Weimar; Larissa Schleicher, Christian Knedlik, TU Ilmenau, Institut für Werkstofftechnik, Ilmenau, GERMANY; Matthias Voelskov, Wolfgang Skorupa, FZ Rossendorf e.V., Insitut für Ionenstrahlphysik und Materialforschung, Dresden, GERMANY; R.A. Yankov, J. Pezoldt, TU Ilmenau, Institut für Festkörperelektronik, Ilmenau, GERMANY. 

N3.9 
SHARP SPIKE FORMATION ON SILICON INDUCED BY FEMTOSECOND LASER PULSES. Tsing-Hua Her, Eric Mazur, Harvard Univ, Div of Engineering and Applied Science, Cambridge, MA; Rich Finlay, Claudia Wu, Harvard Univ, Dept of Physics, Cambridge, MA. 

N3.10 
FAST CARRIER DIFFUSION PROBED BY TABLE-TOP ULTRAFAST X-RAY DIFFRACTION. Ting Guo, Ralph Jimenez, Christoph Rose-Petruck, Kent Wilson, C.P.J. Barty, Dept. of Chemistry, University of California San Diego, La Jolla, CA. 

N3.11 
NONCRUCIAL ROLE OF THE DEFECTS IN THE SPLITTING FOR HYDROGEN IMPLANTED SILICON WITH HIGH BORON CONCENTRATION. Vladimir P.Popov, Vladimir F. Stas, Irina V. Antonova, Institute of Semiconductor Physics, Novosibirsk, RUSSIA. 

N3.12 
FLUX DEPENDENT GENERATION RATES OF IRRADIATION-INDUCED DEFECT CLUSTERS IN n-Si UNDER 17 MeV PROTON IRRADIATION. K. Kono, N. Kishimoto and H. Amakura, High Resolution Beam Research Station, National Research Institute for Metals, Tskuba, Ibaraki, JAPAN. 

N3.13 
Abstract Withdrawn. 

N3.14 
CRYSTALLIZATION ANALYSIS OF AMORPHOUS Si FILMS OBTAINED THROUGH ION IRRADIATION AND EXCIMER LASER IRRADIATION: IMPLICATIONS FOR AMORPHIZATION MECHANISMS. J.P. Leonard, John C. Leu, and James S. Im, Program in Materials Science and Engineering, School of Engineering and Applied Science, Columbia University, New York, NY. 

N3.15 
A DLTS INVESTIGATION ON THE EFFECT OF ION MASS, DOSE, DOSE RATE AND ENERGY ON THE INTRODUCTION OF A HIGHER-ORDER VACANCY CLUSTER IN NOBLE GAS ION BOMBARDED n-Si. Prakash N. K. Deenapanray, J.S. Williams, Australian National University, Dept of Electronic Materials Engineering, Canberra, ACT, AUSTRALIA. 

N3.16 
INSTABILITY OF NANOCAVITIES IN DISORDERED AND AMORPHOUS Si UNDER ION IRRADIATION. Xianfang Zhu, James Williams, Dept of Electronic Materials Engineering, Research School of Physical Sciences & Engineering, ANU, Canberra, AUSTRALIA; Jeff McCallum, School of Physics, Melbourne University, Parkville, AUSTRALIA. 

N3.17 
ION-IMPLANTATION/ANNEALING-INDUCED PRECIPITATION OF NANOPHASE FERROMAGNETIC PARTICLES IN YTTRIUM-STABILIZED ZrO2S. Honda, F.A. Modine, A. Meldrum, J.D. Budai, T.E. Haynes, and L.A. Boatner, Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN; L.A. Gea, Joint Research Center, Institute of Advanced Materials, Ispra, ITALY. 

N3.18 
INTERACTION OF DEUTERIUM WITH CAVITIES IN CRYSTALLINE Si AND MgO. A.V. Fedorov, A. van Veen, H. Schut, E.A.C. Neeft, IRI, TU Delft, Delft, NETHERLANDS. 

N3.19 
DEFECTS IN ION IMPLANTED Si STUDIED WITH POSITRONS. Bent Nielsen, Brookhaven National Laboratory, Upton, NY: O.W. Holland and E. Roth, Oak Ridge National Laboratory, Oak Ridge, TN. 

N3.20 
OPTICAL PROPERTIES OF LASER-MODIFIED DIAMOND SURFACES. A.V. Khomich, V.I. Polyakov, Institute of Radio Engineering and Electronics, Moscow, RUSSIA; S.M. Pimenov, V.V. Kononenko, V.I. Konov, General Physics Institute, Moscow, RUSSIA; S. Gloor, W. Luthy, H.P. Weber, Institute of Applied Physics, University of Bern, Bern, SWITZERLAND. 

N3.21 
NUCLEATION AND GROWTH OF DIAMOND IN GRAPHITIC STRUCTURES UNDER IRRADIATION: THEORETICAL CONSIDERATIONS. Michael Zaiser, Florian Banhart, Max-Planck Institut fuer Metallforschung, Stuttgart, GERMANY. 

N3.22 
REDUCED COMPRESSIVE STRESS IN DIAMONDLIKE CARBON THIN FILM BY LOW ENERGY PLASMA SOURCE ION IMPLANTATION. Doug H. Lee, Kevin C. Walter, Michael A. Nastasi, Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, NM. 

N3.23 
ION-INDUCED EFFECTIVE SURFACE DIFFUSION IN ION SPUTTERING. Maxim A. Makeev, Albert-Laszlo Barabasi, Dept of Physics, University of Notre Dame, Notre Dame, IN. 

N3.24 
ORDERING OF IRON PRECIPITATES FORMED BY ION IMPLANTATION INTO PMMA. V.Yu.Petukhov, M.I. Ibragimova, N.R. Khabibullina, I.B. Khaibullin, Physical Technical Institute of the Russian Academy of Sciences, Kazan, RUSSIA. 

N3.25 
ION BEAM IRRADIATIONæAN EFFICIENT CONTROL METHOD TO MODIFY MICROSTRUCTURE OF POLYMERS ON A SUB-NANOMETER SCALE. Xinglong Xu and M. R. Coleman, Dept. of Chem. Engineering, University of Arkansas, Fayetteville, AR; U. Myler, P. J. Simpson, Dept. of Phys. and Astronomy, Univ. of Western Ontario, London, Ontario, CANADA. 

N3.26 
THIN-FILM SYNTHESIS USING PULSED ION BEAM DEPOSITION. T.J. Renk, T.A. Friedmann, P. Newcomer Provencio, M.P. Siegal, and D.R. Tallant, Sandia National Laboratories, Albuquerque, NM; and K. Kasuya, Tokyo Institute of Technology, Yokohama, JAPAN. 

N3.27 
INFLUENCE OF ELECTRON BEAM IRRADIATION ON NUCLEATION OF WATER DROPS ON SiO2 GLASS MISTED. Kazuya Oguri, Akira Tonegawa, Department of Physics, Tokai University, Kazuo Takayama, Yoshitake Nishi, Department of Materials Science, Tokai University. 

N3.28 
MEASUREMENT OF OXYGEN DISORDER AND NANO-TWIN MICROSTRUCTURE ASSOCIATED WITH COLUMNAR DEFECTS IN YBCO. Y. Yan, Materials Science Division, Argonne National Laboratory, Argonne, IL; T. Walther, Institut fuer Anorganische Materialforschung, Universitaet Bonn, Bonn, GERMANY; M.A. Kirk, Materials Science Division, Argonne National Laboratory, Argonne, IL. 

N3.29 
OXYGEN DEFECTS IN YBCO CRYSTALS AFTER 300keV ELECTRON AND GAMMA- IRRADIATIONS. Marquis Kirk, ANL, Argonne, IL; Elvira Ibragimova, Eldar Gasanov, Anatoly Nebesny, Inst of Nuclear Physics, Tashkent, UZBEKISTAN. 

N3.30 
RADIATION STABLE SEMICONDUCTORS, INSULATORS AND METALS. (EXPERIMENTS, THE THEORY, AND TECHNICAL APPLICATIONS). Vladimir M. Koshkin, Polytechnic Univ., Kharkov, UKRAINE. 

N3.31 
RADIATION-INDUCED DEFECTS IN ELECTRON AND PROTON IRRADIATED ZnS. Sebastian Brunner, Werner Puff, Institut für Technische Physik, Technische Universität Graz, Graz, AUSTRIA; Adam G. Balogh, Dept of Material Science, Technical University Darmstadt, Darmstadt, GERMANY; Peter Mascher, Dept of Engineering Physics, McMaster University, Hamilton, CANADA. 

N3.32 
PROTON IRRADIATION INDUCED DEFECTS IN 6H- AND 4H-SiC. Werner Puff, Institut für Technische Physik, Technische Universität Graz, Graz, AUSTRIA; Adam G. Balogh, Department of Material Science, Technical University Darmstadt, Darmstadt, GERMANY; Peter Mascher, Department of Engineering Physics, McMaster University, Hamilton, CANADA. 

N3.33 
DAMAGE RESPONSE TO IRRADIATION TEMPERATURE AND ION FLUENCE IN C+ IMPLANTED 6H-SiC. W. Jiang, W.J. Weber, S. Thevuthasan and D.E. McCready, Pacific Northwest National Laboratory, Richland, WA. 

N3.34 
IN SITU AMORPHIZATION OF SiC BY ELECTRON IRRADIATION. J. Bentley, Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge, TN. 

N3.35 
DISPLACEMENT THRESHOLD ENERGIES IN 6H SILICON CARBIDE. R. Devanathan, W.J. Weber, H.L. Heinisch, Pacific Northwest National Laboratory, Richland, WA; H. Serizawa, Joining and Welding Research Institute, Osaka, JAPAN; T. Diaz de la Rubia, Lawrence Livermore National Laboratory, Livermore, CA. 

N3.36 
EFFECTS OF NEUTRON IRRADIATION ON THE INTERPHASE INTEGRITY OF SiC COMPOSITES. L.L. Snead, Oak Ridge National Laboratory, Oak Ridge, TN. 

N3.37 
LIGHT ION IRRADIATION CREEP OF SCS-6 SILICON CARBIDE FIBERS IN THE TEMPERATURE RANGE 450 TO 1100 C. Reinhard Scholz, Commisson of the European Community, JRC Ispra, ITALY; Hajrudin Pasic, Ohio University, Mech. Engrg. Dept., Athens, OH. 

N3.38 
EFFECT OF LOW TEMPERATURE ION IRRADIATION ON THE MICROSTRUCTURE OF NITRIDE CERAMICS. S.J. Zinkle, L.L. Snead, W.S. Eatherly, J.W. Jones and D.K. Hensley, Oak Ridge National Laboratory, Oak Ridge, TN. 

N3.39 
DAMAGE EVOLUTION IN Xe-ION IRRADIATED RUTILE (TiO2) SINGLE CRYSTALS Fuxin Li, Kurt E. Sickafus, Caleb R. Evans, Michael Nastasi, Materials Science & Technology, Los Alamos National Laboratory, Los Alamos, NM; Ping Lu, New Mexico Institute of Technology, Socorro, NM. 

N3.40 
A COMPARATIVE STUDY ON MECHANICAL PROPERTIES OF ION-IRRADIATED Al2O3 AND MgO$\cdot$Al2O3Kazuhiro Yasuda, Chiken Kinoshita, Koichiro Izumi, Kyushu University, Dept of Applied Quamtum Physics and Nuclear Engineering, Fukuoka, JAPAN. 

N3.41 
AMORPHIZATION OF Gd2Ti2O7 BY ENERGETIC HEAVY ION IRRADIATION. R. Devanathan, W.J. Weber, and R.E. Williford, Pacific Northwest National Laboratory, Richland, WA. 

N3.42 
ION IRRADIATION EFFECTS FOR TWO PYROCHLORE COMPOSITIONS: Gd2Ti2O7 AND Gd2Zr2O7S.X. Wang, L.M. Wang and R.C. Ewing, Department of Nuclear Engineering & Radiological Sciences, University of Michigan, Ann Arbor, MI. 

N3.43 
ELECTRON IRRADIATION OF ZEOLITES. S.X. Wang, L.M. Wang and R.C. Ewing, Department of Nuclear Engineering & Radiological Sciences, University of Michigan, Ann Arbor, MI. 

N3.44 
THE EFFECT OF TEMPERATURE AND RECOIL SPECTRA ON AMORPHIZATION IN ZIRCON. W. J. Weber, R. Devanathan, Pacific Northwest National Laboratory, Richland, WA; A. Meldrum, L. A. Boatner, Oak Ridge National Laboratory, Oak Ridge, TN; R. C. Ewing, L. M. Wang, Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, Ann Arbor, MI. 

N3.45 
EFFECTS OF CESIUM ION IMPLANTATION IN ZIRCONOLITE AND ZIRCONIA. L.M. Wang and R.C. Ewing, Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, Ann Arbor, MI. 

N3.46 
DAMAGE ACCUMULATION AND THERMAL RECOVERY IN SrTiO3 IMPLANTED WITH VARIOUS IONS. S. Thevuthasan, W. Jiang, D.E. McCready, and W.J. Weber, Pacific Northwest National Laboratory, Richland, WA. 

N3.47 
RIGIDITY CONSTRAINTS IN AMORPHIZATION OF SINGLY- AND MULTIPLY-POLYTOPIC STRUCTURES. Linn W. Hobbs, Department of Materials Science & Engineering; C. Esther Jesurum, Bonnie Berger, Department of Mathematics, MIT, Cambridge, MA. 

N3.48 
SPECTROSCOPIC STUDIES OF GAMMA-IRRADIATED GLASS WASTE FORMS. Nancy J. Hess, Actinide and Trace Metals Geochemistry, Pacific Northwest National Laboratory; William J. Weber, Materials Science, Pacific Northwest National Laboratory. 

N3.49 
EXCITONS AND DEFECTS IN SILICA: A SEMIEMPIRICAL AND DFT METHODOLOGY STUDY. Jakyoung Song and L. Rene Corrales, Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA. 

N3.50 
TIN E' CENTERS IN X-RAY IRRADIATED Sn-DOPED SILICA. Norberto Chiodini, Franco Meinardi, Franca Morazzoni, Alberto Paleari, Roberto Scotti, Giorgio Spinolo INFM - Dept. of Material Science, Univ of Milano, Milano, ITALY. 

N3.51 
PHASE TRANSFORMATIONS INDUCED IN METALLIC GLASSES BY PULSED LASER AND ALPHA PARTICLE BEAM IRRADIATION. Monica Sorescu, Duquesne University, Department of Physics, Pittsburgh, PA. 

N3.52 
EFFECTS OF ALPHA DECAY DAMAGE ON THE STRUCTURE AND LEACHING RATES OF A GLASS-BONDED CERAMIC HIGH LEVEL WASTE FORM. Steven M. Frank, David W. Esh, Stephen G. Johnson, Marianne Noy and Thomas P. O'Holleran, Argonne National Laboratory-West, Idaho Falls, ID. 

N3.53 
RADIATION EFFECTS IN ZIRCON, HAFNON, AND THORITE: IMPLICATIONS FOR Pu DISPOSAL. A. Meldrum, S.J. Zinkle, L.A. Boatner, Oak Ridge National Laboratory, Oak Ridge, TN; R.C. Ewing, The University of Michigan, Dept of NE&RS, Ann Arbor, MI. 

N3.54 
STRUCTURAL EVOLUTION OF SIMPLIFIED NUCLEAR GLASSES UNDER -IRRADIATION: A RAMAN SPECTROSCOPY STUDY. Bruno Boizot, Guillaume Petite, CEA/DSM/DRECAM/SRSIM, Saclay, FRANCE; Dominique Ghaleb, CEA/DCC/SCD, Marcoule, FRANCE; Bruno Reynard, Laboratoire de Sciences de la Terre, ENS Lyon, FRANCE; Georges Calas, LMCP, Paris, FRANCE. 

SESSION N4: CERAMICS AND NUCLEAR WASTE MATERIALS 
Chairs: Ram Devanathan and Rodney C. Ewing 
Tuesday Morning, December 1, 1998 



8:30 AM *N4.1 
IRRADIATED MICROSTRUCTURES OF MAGNESIA ALUMINATE SPINEL AND THEIR CONTROLLING FACTORS. Chiken Kinoshita, Syo Matsumura, Kazuhiro Yasuda, Takeshi Soeda, Kyushu University, Dept of Applied Quamtum Physics and Nuclear Engineering, Fukuoka, JAPAN. 

9:00 AM N4.2 
MICROSTRUCTURE OF SWIFT HEAVY ION IRRADIATED MgAl2O4 SPINEL. S.J. Zinkle, Oak Ridge National Lab, Oak Ridge, TN; H.J. Matzke, Institute for Transuranium Elements, Karlsruhe, GERMANY and V.A. Skuratov, Joint Institute for Nuclear Research, Flerov Lab, Center of Applied Physics, Dubna, RUSSIA. 

9:15 AM N4.3 
FORMATION OF ZnAl2O4 SPINEL IN Al2O3 BY ION IMPLANTATION. C.W. White, E. Sonder, J.D. Budai, A. Meldrum, R.A. Zuhr, S.P. Withrow, Oak Ridge National Laboratory, Oak Ridge, TN; D.O Henderson, Fisk University, Nashville, TN. 

9:30 AM N4.4 
THE CRITICAL DOSE FOR AMORPHISATION OF PEROVSKITE: EFFECT OF PRE-EXISTING CATION VACANCIES. Katherine L. Smith, Mark G. Blackford, Eric R. Vance, Materials Division, Australian Nuclear Science and Technology Organisation, Menai, NSW, AUSTRALIA. 

9:45 AM N4.5 
BUBBLE FORMATION AND GROWTH IN NUCLEAR WASTE GLASSES. Xidong Chen, Robert C. Birtcher, Materials Science Division, Argonne National Laboratory, Argonne, IL; S. E. Donnelly, Joule Physics Laboratory, Science Research Institute, University of Salford, UK. 

10:00 AM BREAK 

10:30 AM *N4.6 
CASCADE DISORDERING OF SILICA AND BOROSILICATE GLASSES USING LOCAL TOPOLOGICAL MODELING. C. Esther Jesurum, Bonnie Berger, Department of Mathematics; Vinay Pulim, Laboratory for Computer Science; Linn W. Hobbs, Department of Materials Science & Engineering, MIT, Cambridge, MA. 

11:00 AM N4.7 
BEHAVIOUR OF Cs AND I IN ZIRCONIA BASED FUEL. Claude Degueldre, Manuel Pouchon, Max Doebli, Guido Ledergerber, Paul Scherrer Institute, Villigen PSI, SWITZERLAND. 

11:15 AM N4.8 
MOLECULAR DYNAMICS SIMULATION OF RECOIL NUCLEUS DISPLACEMENT CASCADE IN ZIRCON. Jean-Paul CrocombetteCEA-CEREM-SRMP, Gif/Yvette, FRANCE and Dominique Ghaleb CEA-DCC-DRRV-SCD, CE-VALRHO, Bagnols/Ceze, FRANCE. 

11:30 AM N4.9 
COMPUTER SIMULATIONS OF IRRADIATION-INDUCED DEFECT ACCUMULATION AND AMORPHIZATION IN ZIRCON. H.L. Heinisch, R.E. Williford and W.J. Weber, Pacific Northwest National Laboratory, Richland WA. 

11:45 AM N4.10 
STRUCTURAL ANALYSIS OF A COMPLETELY AMORPHOUS 238Pu-DOPED ZIRCON BY NEUTRON DIFFRACTION. Jeffrey A. Fortner, John M. Hanchar, Yaspal Badyal, David C.L. Price, Argonne National Laboratory, Argonne, IL; and William J. Weber, Pacific Northwest National Laboratory. 

SESSION N5: AUSTENITIC AND REACTOR PRESSURE VESSEL STEELS 
Chairs: Dan Edwards and Heinrich J. Wollenberger 
Tuesday Afternoon, December 1, 1998 
Simmons (M)

1:30 PM N5.1 
HIGH-RESOLUTION ELECTRON MICROSCOPY STUDIES OF THE PRECIPITATION OF COPPER UNDER NEUTRON IRRADIATION IN AN Fe-1.3% Cu ALLOY. A.C. Rice, M.L. Jenkins, Department of Materials, University of Oxford, Oxford, UNITED KINGDOM; M.A. Kirk, Materials Science Division, Argonne, National Laboratory, Argonne, IL. 

1:45 PM N5.2 
ANOMALOUS SMALL ANGLE X-RAY SCATTERING STUDIES OF MODEL PRESSURE VESSEL ALLOY MICROSTRUCTURES. Dale E. Alexander and B.J. Kestel, Argonne National Laboratory, Materials Science Division, Argonne, IL; Pete R. Jemian, University of Illinois at Urbana-Champaign, Materials Research Lab., Urbana-Champaign, IL; G.R. Odette, D. Klingensmith and D. Gragg, University of California at Santa Barbara, Department of Mechanical and Environmental Engineering, Santa Barbara, CA. 

2:00 PM N5.3 
SANS STUDIES OF COPPER RICH PRECIPITATE EVOLUTION FOLLOWING POST-IRRADIATION ANNEALING AND RE-IRRADIATION IN REACTOR PRESSURE VESSEL STEELS. B.D. Wirth, Dept. of Mechanical Engineering, University of California, Santa Barbara, Santa Barbara, CA; M.A. Sokolov, Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN; G.R. Odette, G.E. Lucas, and R.D. Klingensmith, Dept. of Mechanical Engineering, University of California, Santa Barbara, Santa Barbara, CA. 

2:15 PM *N5.4 
MICROCHEMISTRY OF PROTON-IRRADIATED AUSTENITIC ALLOYS UNDER CONDITIONS RELEVANT TO LWR CORE COMPONENTS. Gary S. Was, Todd R. Allen, Jeremy T. Busby, Jian Gan, Deborah Damcott, Dean Carter, Michael Atzmon, University of Michigan, Ann Arbor, MI; Ed Kenik, Oak Ridge National Laboratory, Oak Ridge, TN. 

2:45 PM BREAK 

3:15 PM N5.5 
THE EFFECT OF LOW DOSE-RATE IRRADIATION ON THE MICROSTRUCTURE OF 304 STAINLESS STEEL. James I. Cole, Todd R. Allen, Argonne National Laboratory-West, Idaho Falls, ID. 

3:30 PM N5.6 
DAMAGE STRUCTURE OF AUSTENITIC STAINLESS STEEL 316LN IRRADIATED AT LOW TEMPERATURE IN HFIR. N. Hashimotoand J.P. Robertson, Oak Ridge National Laboratory, Oak Ridge, TN; E. Wakai, Japan Atomic Energy Research Institute, Ibaraki, JAPAN.