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Fall 2006 logo2006 MRS Fall Meeting & Exhibit

November 27 - December 1, 2006 | Boston
Meeting Chairs:
 Babu R. Chalamala, Louis J. Terminello, Helena Van Swygenhoven

 

Symposium I : Advances in III-V Nitride Semiconductor Materials and Devices

2006-11-27   Show All Abstracts

Symposium Organizers

Cammy R. Abernathy University of Florida
Hongxing Jiang Kansas State University
John M. Zavada U.S. Army Research Office
I1: Nitride Based Spintronics
Session Chairs
John Zavada
Monday PM, November 27, 2006
Room 311 (Hynes)

9:30 AM - **I1.1
Spinodal Decomposition and Super-Paramagnetism in Dilute Magnetic Nitride Semiconductors.

Kazunori Sato 1 , Tetsuya Fukushima 1 , Hiroshi Katayama-Yoshida 1
1 , ISIR, Osaka University , Ibaraki, Osaka, Japan

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10:00 AM - I1.2
Spin-orbit Coupling and Zero-field Electron Spin Splitting in AlGaN/AlN/GaN Heterostructures with a Polarization Induced Two-dimensional Electron Gas.

Cagliyan Kurdak 1 2 , Necmi Biyikli 2 , Umit Ozgur 2 , Hadis Morkoç 2 , Vladimir Litvinov 3
1 , University of Michigan, Ann Arbor, Michigan, United States, 2 , Virginia Commonwealth University, Richmond, Virginia, United States, 3 , WaveBand/Sierra Nevada Corporation, Irvine, California, United States

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10:15 AM - I1.3
First Growth of Cr-doped GaN Layers by MOVPE for Spintronics

Nicoleta Kaluza 1 , Yong Cho 1 , Nicolas Thillosen 1 , Martina von der Ahe 1 , Vitalij Guzenko 1 , Thomas Schaepers 1 , Hilde Hardtdegen 1 , Uwe Breuer 2 , Reza Ghadimi 3 , Marian Fecioru-Morianu 3 , Bernd Beschoten 3
1 Institute of Bio- and Nanosystems, Research Center Juelich, Juelich Germany, 2 Central Division of Analytical Chemistry, Research Center Jülich, Juelich Germany, 3 II. Physikalisches Institut, RWTH Aachen, Aachen Germany

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10:30 AM - I1.4
Properties of Ferromagnetic GaGdN.

Jennifer Hite 1 , R. Frazier 1 , K. Allums 1 , R. Davies 1 , G. Thaler 1 , C. Abernathy 1 , S. Pearton 1 , J. Zavada 2
1 Materials Science & Engineering, University of Florida, Gainesville, Florida, United States, 2 , Army Research Office, Research Triangle Park, North Carolina, United States

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10:45 AM - I1.5
Gadolinium and Oxygen co-doping of Gallium Nitride: an LSDA+U study.

Walter Lambrecht 1 , Paul Larson 1
1 Department of Physics, Case Western Reserve University, Cleveland, Ohio, United States

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11:00 AM - I1:Spintronics
BREAK

I2: UV Materials and Devices
Session Chairs
Hongxing Jiang
Monday PM, November 27, 2006
Room 311 (Hynes)

11:30 AM - **I2.1
AlxGa1-xN Based Deep Ultraviolet Emitters and Detectors.

Asif Khan 1
1 Dept. of Electrical Engineering, University of South Carolina, Columbia, South Carolina, United States

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12:00 PM - I2.2
Extremely Large S/N Ratio of UV Detector Based on AlGaN/GaN JH-FET with p-GaN Gate Contact.

Shuichi Miura 1 2 , Takahiro Fujii 1 2 , Motoaki Iwaya 1 2 , Satoshi Kamiyama 1 2 , Hiroshi Amano 1 2 , Isamu Akasaki 1 2
1 Department of Materials Science and Engineering, Meijo University, Nagoya Japan, 2 21st-Century COE Program “Nano-Factory”, Meijo University, Nagoya Japan

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12:15 PM - I2.3
MOCVD Growth of AlGaN UV LEDs (λ~300 nm) on Bulk AlN Substrates

Zaiyuan Ren 1 , Qian Sun 1 , Soon-Yong Kwon 1 , Jung Han 1 , Kristina Davitt 2 , Yoon-Kyu Song 2 , Arto Nurmikko 2 , Wayne Liu 3 , Joe Smart 3 , Leo Schowalter 3
1 Electrical Engineering, Yale University, New Haven, Connecticut, United States, 2 Division of engineering, Brown University, Providence, Rhode Island, United States, 3 , Crystal IS, Green Island, New York, United States

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12:30 PM - I2.4
Growth and Optical Properties of Al rich AlN/AlGaN Quantum Wells.

Talal Al tahtamouni 1 , Neeraj Nepal 1 , Mim Nakarmi 1 , Jingyu Lin 1 , Hongxing Jiang 1
1 Physics, Kansas State University, Manhattan, Kansas, United States

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12:45 PM - I2.5
Fabrication of Deep Ultraviolet Light-Emitting Diodes with a Large Emission Area Using a Laser Lift-Off Technique

Koji Kawasaki 1 , Tomohiro Maegawa 1 , Misaichi Takeuchi 1 2 , Yoshinobu Aoyagi 1 2
1 , Tokyo Institute of Technology, Yokohama Japan, 2 , RIKEN, Wako Japan

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I3: Material Growth
Session Chairs
Vladimir Dmitriev
Zlatko Sitar
Monday PM, November 27, 2006
Room 311 (Hynes)

2:30 PM - I3.1
The Nucleation and Suppression of Threading Dislocations at Isolated Interfacial Steps for III-Nitride Films on 4H-SiC Mesa Substrates

Mark Twigg 1 , Nabil Bassim 1 , Michael Mastro 1 , Charles Eddy 1 , Thomas Zega 1 , Richard Henry 1 , James. Culbertson 1 , Ronald Holm 1 , Philip Neudeck 2 , J. Powell 3 , Andrew Trunek 4
1 , Naval Research Laboratory, Washington, District of Columbia, United States, 2 , NASA Glenn Research Center, Cleveland, Ohio, United States, 3 , OAI, Cleveland, Ohio, United States, 4 , Sest, Inc., Cleveland, Ohio, United States

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2:45 PM - I3.2
Optimizing Growth Conditions of Bulk Gallium Nitride under Acidic Ammonothermal Conditions

Dirk Ehrentraut 1 , Yuji Kagamitani 1 , Naruhiro Hoshino 1 , Akira Yoshikawa 1 , Tsuguo Fukuda 1 , Hirohisa Itoh 2 , Shinichiro Kawabata 2
1 , Tohoku University, Sendai Japan, 2 , Mitsubishi Chemical Corp., Ibaraki Japan

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3:00 PM - I3.3
Ammonothermal Growth and Characterization of AlxGa1-xN Crystals.

Buguo Wang 1 , Michael Callahan 2 , Michael Suscavage 2 , David Bliss 2
1 , Solid State Scientific Corporation, Nashua, New Hampshire, United States, 2 Sensor Directorate, Air Force Research Laboratory, Hanscom AFB, Massachusetts, United States

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3:15 PM - I3.4
Strain-free Low-defect-density Bulk GaN with Nonpolar Orientations.

Tanya Paskova 1 , Plamen P. Paskov 2 , Vanya Darakchieva 2 , Roland Kroeger 1 , Detlef Hommel 1 , Bo Monemar 2 , Edward Preble 3 , Andrew Hanser 3 , Mark N. Williams 3 , Michael Tutor 3
1 , Universiy of Bremen, Bremen Germany, 2 , Linkoping University, Linkoping Sweden, 3 , Kyma Technologies Inc., Raleigh, North Carolina, United States

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3:30 PM - I3:Growth
BREAK

4:30 PM - I3.5
Electrical Properties of Free Standing AlN Grown by Halide Chemical Vapor Deposition.

Timothy Bogart 1 , Mark Fanton 1 , Ed Oslosky 1 , Brian Weiland 1 , Rodney Ray 1 , Adam Dilts 1 , David Snyder 1
1 , Penn State Electro-Optics Center, Freeport, Pennsylvania, United States

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4:45 PM - I3.6
GaN-ready Native AlN Based Substrates for Device Applications

Joseph Smart 1 , Wayne Liu 1 , Robert Bondokov 1 , Kenneth Morgan 1 , Timothy Bettles 1 , Sandra Schujman 1 , Leo Schowalter 1
1 , Crystal IS, Inc. , Green Island, New York, United States

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5:00 PM - I3.7
Bulk AlN Crystal Growth on SiC Seeds and Defects Study

Peng Lu 1 , James Edgar 1 , Raoul Schlesser 2 , Rafael Dalmau 2 , Zlatko Sitar 2
1 Chemical Engineering, Kansas State University, Manhattan, Kansas, United States, 2 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States

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5:15 PM - I3.8
Fabrication and Characterization of 50mm diameter AlN Single-Crystal Wafers cut From Bulk Crystals

Robert Bondokov 1 , Kenneth Morgan 1 , Glen Slack 1 , Leo Schowalter 1
1 , Crystal IS, Inc. , Green Island, New York, Un