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MRS publishes with Springer Nature

 

Fall 2006 logo2006 MRS Fall Meeting & Exhibit

November 27 - December 1, 2006 | Boston
Meeting Chairs:
 Babu R. Chalamala, Louis J. Terminello, Helena Van Swygenhoven

 

Symposium L : Group IV Semiconductor Nanostructures

2006-11-27   Show All Abstracts

Symposium Organizers

Leonid Tsybeskov New Jersey Institute of Technology
David J. Lockwood National Research Council
Christophe Delerue IEMN
Masakazu Ichikawa The University of Tokyo
Anthony W. van Buuren Lawrence Livermore National Laboratory
L1: Light Emission and Photonic Devices I
Session Chairs
Harry Atwater
David Lockwood
Monday PM, November 27, 2006
Room 207 (Hynes)

9:15 AM - L1: LEPD1
Opening Remarks

Show Abstract

9:30 AM - **L1.1
Group IV Semiconductor Light Emitting Nanostructures: Which can be Bright? Which can Yield Gain?

Harry Atwater 1
1 Applied Physics, California Institute of Technology, Pasadena, California, United States

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10:00 AM - L1.2
Experimental Measurement of the Dielectric Constant of Nanometer-size Silicon Structures

Han Yoo 1 , Rishi Krishnan 2 , Christopher Striemer 2 , Philippe Fauchet 2
1 Department of Physics and Astronomy, University of Rochester, Rochester, New York, United States, 2 Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York, United States

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10:15 AM - L1.3
Effect of Surface Termination on Electronic Structure of Silicon Nanoparticles.

April Montoya Vaverka 1 2 , Robert Meulenburg 2 , Trevor Willey 2 , Subhash Risbud 1 , Louis Terminello 2 , Anthony van Buuren 2 3
1 Chemical Engineering and Materials Science, University of California, Davis, Davis, California, United States, 2 Chemistry and Materials Science, Lawrence Livermore National Laboratory, Livermore, California, United States, 3 , University of California, Merced, Merced, California, United States

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10:30 AM - **L1.4
Quasi-Direct Transition due to Proximity Effects in GaSb-Si Anti-Electron Type-II Quantum Dots.

Susumu Fukatsu 1 2
1 Graduate School of Arts and Sciences, University of Tokyo, Meguro, Tokyo, Japan, 2 PRESTO, Japan Science and Technology Agency, Saitama Japan

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11:00 AM - L1: LEPD1
BREAK

11:30 AM - **L1.5
Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region.

Takashi Suemasu 1 , Tsuyoshi Sunohara 1 , Yuya Ugajin 1 , Ken'ichi Kobayashi 1 , Shigemitsu Murase 1
1 Institute of Applied Physics, University of Tsukuba, Tsukuba Japan

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12:00 PM - L1.6
Quantum-confinement Effect in β-FeSi2 Flat Nanoislands on Si (111) Substrates.

Yoshiaki Nakamura 1 2 , Ryota Suzuki 1 , Masafumi Umeno 1 , Sung Cho 3 2 , Nobuo Tanaka 3 2 , Masakazu Ichikawa 1 2
1 Dept. of applied physics, The University of Tokyo, Tokyo Japan, 2 CREST, Japan Science and Technology Agency, Tokyo Japan, 3 EcoTopia Science Institute, Nagoya University, Nagoya Japan

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12:15 PM - L1.7
Theoretical study of Si-rich transition-metal silicides with double-graphene-like structures.

Takehide Miyazaki 1 , Toshihiko Kanayama 2
1 RICS, AIST, Tsukuba Japan, 2 ASRC, AIST, Tsukuba Japan

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12:30 PM - **L1.8
Advances in SiGeSn/Ge Technology

Richard Soref 1 , John Kouvetakis 2 , Jose Menendez 2
1 , Air Force Research Laboratory, Hanscom AFB, Massachusetts, United States, 2 , Arizona State University, Tempe, Arizona, United States

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L2: Light Emission and Photonic Devices II
Session Chairs
Graham Reed
Richard Soref
Monday PM, November 27, 2006
Room 207 (Hynes)

2:30 PM - **L2.1
Sub-micron Silicon Photonic Devices.

Graham Reed 1 , Goran Mashanovich 1 , Frederic Gardes 1 , Branislav Timotijevic 1 , William Headley 1
1 , University of Surrey, Guildford United Kingdom

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3:00 PM - L2.2
Fabrication of Extreme aspect Ratio Tubes and Wires of Silicon and Germanium Within Microstructured Optical Fibers.

Neil Baril 1 4 , John Badding 1 4 , Vankatraman Gopalan 3 4 , Pier Sazio 5 , Thomas Scheidemantel 2 4 , Bryan Jackson 3 4 , Dong-Jin Won 3 4 , Adrian Amezcua Correa 5 , Chris Finlayson 5
1 Chemistry, The Pennsylvania State University, University Park, Pennsylvania, United States, 4 The Center for Nanoscale Science, The Pennsylvania State University, University Park, Pennsylvania, United States, 3 Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, United States, 5 Optoelectronics Research Centre, University of Southampton, Southampton United Kingdom, 2 Physics, The Pennsylvania State University, University Park, Pennsylvania, United States

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3:15 PM - L2.3
Large Scale Formation of Y2SiO5:Er Oxyorthosilicate Nanocrystals using Si Nanowires for Efficient, High-gain Light Emitting Material at 1.5 μm.

Kiseok Suh 1 , Jung Shin 1 , Byeong-Soo Bae 2
1 Physics, KAIST, Daejeon Korea (the Republic of), 2 Materials Science, KAIST, Daejeon Korea (the Republic of)

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3:30 PM - L2: LEPD2
BREAK

4:30 PM - **L2.4
Silicon Integrated Nanophotonics - Advances and Challenges.

Yurii Vlasov 1 , Fengnian Xia 1 , Lidija Sekaric 1 , Eric Dulkeith 1 , Solomon Assefa 1 , William Green 1 , Martin O'Boyle 1 , Hendrik Hamann 1 , Sharee McNab 1
1 Physical Sciences Department, IBM T.J. Watson Research Center, Yorktown Heights, New York, United States

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5:00 PM - L2.5
Three Dimensional Silicon Inverse Photonic Quasicrystals for Infrared Wavelengths.

Alexandra Ledermann 2 , Ludovico Cademartiri 1 , Martin Hermatschweiler 3 , Martin Wegener 2 , Geoffrey Ozin 1 , Diederik Wiersma 4 , Georg von Freymann 3
2 , Institut für Angewandte Physik, Karlsruhe Germany, 1 Department of Chemistry, University of Toronto, Toronto, Ontario, Canada, 3 , Institut für Nanotechnologie, Karlsruhe Germany, 4 , European Laboratory for Nonlinear Spectroscopy, Firenze Italy

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5:30 PM - L2.7
Ultra-high Resolution Imaging of Highly Confined Optical Modes in Sub-micron Scale SOI Waveguides.

Jacob Robinson 1 , Stefan Preble 1 , Michal Lipson 1
1 Electrical and Computer Engineering, Cornell , Ithaca, New York, United States

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5:45 PM - L2.8
Si3N4-SiO2-Si Slot-waveguide Disk Resonators in a Silicon Photonic Platform.

Bradley Schmidt 1 , Carlos Barrios 2 , Michal Lipson 1
1 Electrical and Computer Engineering, Cornell University, Ithaca, New York, United States, 2 Instituto de Sistemas Optoelectrónicos y Microtecnología, Ciudad Universitaria, Madrid Spain

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2006-11-28   Show All Abstracts

Symposium Organizers

Leonid Tsybeskov New Jersey Institute of Technology
David J. Lockwood National Research Council
Christophe Delerue IEMN
Masakazu Ichikawa The University of Tokyo
Anthony W. van Buuren Lawrence Livermore National Laboratory
L3: Ge and SiGe Nanostructures I
Session Chairs
Philippe Boucaud
Detlev Gruetzmacher
Tuesday AM, November 28, 2006
Room 207 (Hynes)

9:30 AM - **L3.1
Templated Selfassembly of Ge Dot Arrays, Molecules and 3-dimensional Crystals on Si.

Detlev Grutzmacher 1 , Christian Dais 1 , Elisabeth Müller 1 , Harun Solak 1 , Hans Sigg 1 , Julian Stangl 2 , Günther Bauer 2
1 Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, Villigen-PSI Switzerland, 2 Inst. for semiconductor and solid state physics, Johannes Kepler University Linz, Linz Austria

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10:00 AM - L3.2
Stranski–Krastanov Growth of Tensely Strained Si on Ge (001) Substrates.

Dietmar Pachinger 1 , Gang Chen 1 , Herbert Lichtenberger 1 , Friedrich Schäffler 1
1 Semiconductor Physics, Institute of Semiconductor and solid state physics, Linz Austria

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10:15 AM - L3.3
Electric Field Controlled Directional Growth in Metal-Induced Lateral Crystallization of Amorphous SiGe on Insulating Films.

Masanobu Miyao 1 , Hiroshi Kanno 1 , Taizoh Sadoh 1
1 Department of Electronics, Kyushu University, Fukuoka Japan

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10:30 AM - L3.4
Spin Relaxation in SiGe Islands.

Hans Malissa 1 , Wolfgang Jantsch 1 , Gang Chen 1 , Herbert Lichtenberger 1 , Thomas Fromherz 1 , Friedrich Schäffler 1 , Günther Bauer 1 , Alexei Tyryshkin 2 , Stephen Lyon 2 , Zbyslaw Wilamowski 3
1 Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Linz Austria, 2 Department of Electrical Engineering, Princeton University, Princeton, New Jersey, United States, 3 Institute of Physics, Polish Academy of Sciences, Warsaw Poland

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10:45 AM - L3.5
Photoluminescence Excitation Dependencein Three-dimensional Si/SiGe Nanostructures.

Eun Kyu Lee 1 , Boris Kamenev 1 , Theodore Kamins 2 , Jean-Mark Baribeau 3 , David Lockwood 3 , Leonid Tsybeskov 1
1 ECE, New Jersey Institute of Technology, Newark, New Jersey, United States, 2 Quantum Science Research, Hwelett-Packard Laboratories, Palo Alto, California, United States, 3 National Research Council, Institute for Microstructural Sciences, Ottawa, Ontario, Canada

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11:00 AM - L3: Ge/SiGe
BREAK

11:30 AM - **L3.6
Ge/Si self-assembled Islands for Photonics Applications.

Philippe Boucaud 1 , Xiang Li 1 , Moustafa El Kurdi 1 , Sébastien Sauvage 1 , Xavier Checoury 1 , Sylvain David 1 , Navy Yam 1 , Frédéric Fossard 1 , Daniel Bouchier 1 , Guy Fishman 1
1 , CNRS-IEF, Orsay France

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12:00 PM - L3.7
Ordering and Shape Tuning of Ge Islands on Metal-patterned Si.

Jeremy Robinson 1 2 , Donald Walko 3 , Dohn Arms 3 , Daniel Tinberg 4 , Paul Evans 4 , Yifan Cao 1 , J. Liddle 2 , Oscar Dubon 1 2
1 Materials Science and Engineering, University of California, Berkeley, California, United States, 2 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California, United States, 3 Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois, United States, 4 Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin, United States

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12:15 PM - L3.8
Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

Ian Sharp 1 2 , Qing Xu 1 2 , Chun Yuan 1 2 , Joel Ager III 1 , Daryl Chrzan 1 2 , Eugene Haller 1 2
1 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, United States, 2 Materials Science and Engineering Department, University of California, Berkeley, Berkeley, California, United States

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12:30 PM - L3.9
Influence of Nanoimprinted and Etched Surface Relief on Nucleation and Ordering of Si and Ge on Amorphous Silicon Dioxide.

Ted Kamins 1 , Amir Yasseri 1 , Shashank Sharma 1 , Fabian Pease 2 , Qiangfei Xia 3 , Stephen Chou 3
1 Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, California, United States, 2 Dept. of Electrical Engineering, Stanford University, Stanford, California, United States, 3 Nanostructure Lab, Dept. of Electrical Engineering, Princeton University, Princeton, New Jersey, United States

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12:45 PM - L3.10
Control of Valley Splitting in a Si/SiGe 2DEG Quantum Point Contact.

Lisa McGuire 1 , K. Slinker 1 , S. Goswami 1 , J. Chu 2 , Mark Friesen 1 , S. Coppersmith 1 , M. Eriksson 1
1 , University of Wisconsin, Madison, Wisconsin, United States, 2 , IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York, United States

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L4: Ge and SiGe Nanostructures II / MEMS and Strained Si
Session Chairs
Thomas Fromherz
Avi Kornblit
Tuesday PM, November 28, 2006
Room 207 (Hynes)

2:30 PM - **L4.1
Optoelectronic Properties and Bandstructure of SiGe Quantum Dot and Cascade Structures.

Thomas Fromherz 1 , Moritz Brehm 1 , Patrick Rauter 1 , Nguyen Vinh 2 , Ben Murdin 3 , Jonathan Phillips 4 , Carl Pidgeon 4 , Zhenyang Zhong 1 , Gang Chen 1 , Jiri Novak 1 , Julian Stangl 1 , Detlev Gruetzmacher 5 , Guenther Bauer 1
1 Semiconductor Physics, University Linz, Linz Austria, 2 , FOM Institute for Plasma Physics Rijnhuizen , Nieuwegein Netherlands, 3 , University of Surrey, Guildford United Kingdom, 4 , Heriot-Watt University, Edinburgh United Kingdom, 5 , Paul Scherrer Institut, Villigen Switzerland

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3:00 PM - L4.2
WITHDRAWN 11/16/06 Design Criteria for p-type SiGe Bound-to-Continuum THz QCLs.

Marco Califano 1 , Zoran Ikonic 1 , Robert Kelsall 1 , Paul Harrison 1
1 Electronic & Electrical Engineering, University of Leeds, Leeds United Kingdom

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3:15 PM - L4.3
Luminescence in Multilayers of SiGe Nanocrystals Embedded in SiO2.

M. Avella 1 , A. Prieto 1 , Juan Jimenez 1 , A. Rodríguez 2 , J. Sangrador 2 , T. Rodríguez 2 , M. Ortíz 3 , C. Ballesteros 3 , A. Kling 4
1 Dpto. Física de la Materia Condensada, Universidad de Valladolid, Valladolid Spain, 2 Dpto. de Tecnología Electrónica, Universidad Politécnica de Madrid, Madrid Spain, 3 Dpto. de Física, Universidad Carlos III, Madrid Spain, 4 , Instituto Tecnológico e Nuclear, Sacavém Portugal

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3:30 PM - L4.4
Ordering of Strained Ge Islands on Prepatterned Si(001) Substrates: Morphological Evolution and Nucleation Mechanisms

Gang Chen 1 , Herbert Lichtenberger 1 , Zhenyang Zhong 1 , Günther Bauer 1 , Wolfgang Jantsch 1 , Friedrich Schäffler 1
1 Institute of Semiconductor and Solid State Physics , Johannes Kepler University, Linz Austria

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3:45 PM - L4: Ge/SiGeMEMS
BREAK

4:15 PM - **L4.5
Challenges in the Fabrication of Advanced MEMS.

Avi Kornblit 1 , Vladimir Aksyuk 1 , Cristian Bolle 1 , J. Bower 1 , Raymond Cirelli 1 , Harold Dyson 1 , Ed Ferry 1 , Linus Fetter 1 , Robert Fullowan 1 , Arman Gasparyan 1 , Christopher Jones 1 , Robert Keller 1 , Fred Klemens 1 , Warren Lai 1 , O. Lopez 1 , William Mansfield 1 , John Miner 1 , Chien-Shing Pai 1 , Flavio Pardo 1 , Maria Simon 1 , Thomas Sorsch 1 , J. Taylor 1 , Donald Tennant 1 , Brijesh Vyas 1 , George Watson 1
1 , Lucent Technologies Bell Labs, Murray Hill, New Jersey, United States

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4:45 PM - L4.6
Piezoresistance in Strained Silicon and Strained Silicon Germanium.

Jacob Richter 1 , M. Arnoldus 1 , A. Larsen 2 , J. Hansen 2 , O. Hansen 1 , E. Thomsen 1
1 Department of Micro and Nanotechnology, Technical University of Denmark, Kgs. Lyngby Denmark, 2 Institute of Physics and Astronomy, University of Aarhus, Aarhus Denmark

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5:00 PM - L4.7
Elastically Strain-Shared Nanomembranes: A New Route to High-Quality Strained Silicon.

Shelley Scott 1 , Michelle Roberts 1 , Donald Savage 1 , Arrielle Opotowsky 1 , Max Lagally 1
1 , University of Wisconsin, Madison, Wisconsin, United States

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5:15 PM - L4.8
Local Strain Measurements on Sub-100nm Strained Si/SiGe CMOS Device Strucutres with Convergent Beam Electron Diffraction and Finite Element Simulation.

Wenjun Zhao 1 , Gerd Duscher 1 2 , Mohammed Zikry 3 , George Roagonyi 1
1 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 Condensed Matter Division, Oak Ridge National Lab, Oak Ridge , Tennessee, United States, 3 Mechanical and Aerospace, North Carolina State University, Raleigh, North Carolina, United States

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5:30 PM - L4.9
Silicon on Lattice-Engineered Silicon: Fabrication, Thermal Stability, and GaAs Integration

Carl Dohrman 1 , David Isaacson 1 , Kamesh Chilukuri 1 , Minjoo Lee 1 , Eugene Fitzgerald 1
1 Materials Science and Engineering, MIT, Cambridge, Massachusetts, United States

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5:45 PM - L4.10
Development of a Low Temperature 4 Probe STM and Electrical Conductivity Measurement of One Dimensional Surface Super Structure.

Rei Hobara 1 , Naoka Nagamura 1 , Shinya Yoshimoto 1 , Iwao Matsuda 1 , Shuji Hasegawa 1
1 School of Science, Depertment of physics, The University of Tokyo, Bunkyo-ku, Tokyo, Japan

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2006-11-29   Show All Abstracts

Symposium Organizers

Leonid Tsybeskov New Jersey Institute of Technology
David J. Lockwood National Research Council
Christophe Delerue IEMN
Masakazu Ichikawa The University of Tokyo
Anthony W. van Buuren Lawrence Livermore National Laboratory
L5: Group IV Nanowires I
Session Chairs
Leonid Tsybeskov
Wednesday AM, November 29, 2006
Room 207 (Hynes)

9:30 AM - **L5.1
Kinetic Factors Controlling VLS Growth of Si and Ge Nanowires.

Jerry Tersoff 1 , Suneel Kodambaka 1 , Frances Ross 1
1 , IBM Watson Center, Yorktown Heights, New York, United States

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10:00 AM - L5.2
Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires.

Hossam Haick 1
1 Division Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California, United States

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10:15 AM - L5.3
Laser Annealing of Silicon Nanowires

Nipun Misra 1 , Li Xu 1 , Costas Grigoropoulos 1 , Nathan Cheung 2 , Yaoling Pan 3
1 Mechanical Engineering, University of California, Berkeley, Berkeley, California, United States, 2 Electrical Engineering, University of California,Berkeley, Berkeley, California, United States, 3 , Nanosys Inc., Palo Alto, California, United States

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10:30 AM - L5.4
Band-gap Modulation in Single-crystalline Si1-xGex Nanowires.

Jee-Eun Yang 1 , Chang-Beom Jin 1 , Cheol-Joo Kim 1 , Yosep Yang 1 , Chan-Gyung Park 1 , Moon-Ho Jo 1
1 Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk, Korea (the Republic of)

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10:45 AM - L5.5
Silicon and Germanium Nanowire Synthesis: Catalytic Reactant Decomposition and Solid-Phase Seeding by Nanocrystals in Organic Solvents.

Hsing-Yu Tuan 1 2 3 , Doh Lee 1 2 3 , Brian Korgel 1 2 3
1 Chemical Engineering, University of Texas at Austin, Austin, Texas, United States, 2 Texas Materials Institute, University of Texas at Austin, Austin, Texas, United States, 3 Center for Nano- and Molecular Science and Technology , University of Texas at Austin , Austin, Texas, United States

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11:00 AM - L5: GroupNano1
BREAK

11:30 AM - L5.6
Deterministic Nanowire Growth.

Jacob Woodruff 1 , Joshua Ratchford 1 , Hemanth Jagannathan 2 , Yoshio Nishi 2 , Christopher Chidsey 1
1 Chemistry Department, Stanford University, Stanford, California, United States, 2 Electrical Engineering, Stanford University, Stanford, California, United States

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11:45 AM - L5.7
Vertical Growth and Characterization of Single Crystalline SiGe Alloy Nanowires.

Han-Kyu Seong 1 , Tae-Eon Park 1 , Hee-Chul Han 1 , Eun-Kyoung Jeon 2 , Jeong-O Lee 2 , Ju-Jin Kim 3 , Heon-Jin Choi 1
1 School of Advanced Materials Science and Engineering, Yonsei University , Seoul Korea (the Republic of), 2 Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon Korea (the Republic of), 3 Department of Physics, Chon-buk National University, Chon-ju Korea (the Republic of)

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12:00 PM - L5.8
Growth Characteristics and Properties of Small Diameter Silicon Nanowires.

Pramod Nimmatoori 1 , Trevor Clark 2 , Elizabeth Dickey 2 , Joan Redwing 2
1 Department of Chemical Engineering, Pennsylvania State University, State College, Pennsylvania, United States, 2 Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, State College, Pennsylvania, United States

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12:15 PM - L5.9
Transport Characterization and Device Applications of P-donor Nanowires in Silicon.

Tsung-cheng Shen 1 , S. Robinson 1 2 , J. Tucker 2
1 Department of Physics, Utah State University, Logan, Utah, United States, 2 Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States

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12:30 PM - L5.10
Synthesis and Optical Properties of Silicon Nanowires

Billel Salhi 1 2 , Bernard Gelloz 3 , Nobuyoshi Koshida 3 , Gilles Patriarche 4 , Rabah Boukherroub 1 2
1 Institut de Recherche Interdisciplinaire (IRI), CNRS, Villeneuve d'Ascq France, 2 Institut d'Electronique, de Microélectronique et de Nanotechnologie, CNRS, Villeneuve d'Ascq France, 3 Graduate School of Engineering, Tokyo University of Agriculture and Technology, Tokyo Japan, 4 Laboratoire de Photonique et de Nanostructures, CNRS, Marcoussis France

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12:45 PM - L5.11
Saw-tooth Faceting in Silicon Nanowires Related to Gold Migration.

Vladimir Sivakov 1 2 , Gudrun Andrae 2 , Samuel Hoffmann 4 , Johann Michler 4 , Roland Scholz 1 , Reinhard Schneider 1 , Ulrich Goesele 1 , Silke Christiansen 1 3
1 , Max Planck Institute of Microstructure Physics, Halle Germany, 2 Laser Technology, Institute of Physical High Technology, Jena Germany, 4 , EMPA, Thun Switzerland, 3 Physics, Martin Luther University Halle-Wittenberg, Halle Germany

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L6: Group IV Nanowires II
Session Chairs
Ulrich Goesele
Mark Lundstrom
Wednesday PM, November 29, 2006
Room 207 (Hynes)

2:30 PM - **L6.1
Properties and Fabrication of Silicon Nanostructures.

Ulrich Goesele 1 , Silke Christiansen 1 , Florian Kolb 1 , Alexey Milenin 1 , Manfred Reiche 1 , Volker Schmidt 1 , Roland Scholz 1 , Stephan Senz 1 , Tomohiro Shimizu 1 , Martin Steinhart 1 , Peter Werner 1 , Danilo Zschech 1
1 , Max Planck Institute of Microstructure Physics, Halle Germany

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3:00 PM - L6.2
Synthesis and Properties of FeSi and Fe1-xCoxSi alloy Nanowires

Andrew Schmitt 1 , Lei Zhu 1 , Franz Himpsel 2 , Dieter Schmeisser 3 , Song Jin 1
1 Chemistry, University of Wisconsin-Madison, Madison, Wisconsin, United States, 2 Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, United States, 3 , Lehrstuhl Angewandte Physik, Cottbus Germany

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3:15 PM - L6.3
Simulating Optical Properties of Silicon Nanowires.

Hugh Wilson 1 , Giulia Galli 1 , Francois Gygi 1 , Sebastien Hamel 2 , Andrew Williamson 2 , Ed Ratner 3 , Dan Wack 3
1 Chemistry, University of California, Davis, Davis, California, United States, 2 , Lawrence Livermore National Laboratory, Livermore, California, United States, 3 , KLA-Tencor , Milpitas, California, United States

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3:30 PM - L6.4
Magic structures of H-passivated Silicon nanowires

Cristian Ciobanu 1 , Ning Lu 2 , Tzu-Liang Chan 2 , Cai-Zhuang Wang 2 , Kai-Ming Ho 2
1 Division of Engineering, Colorado School of Mines, GOlden, Colorado, United States, 2 USDOE Ames Laboratory, Physics Department, Iowa State University, Ames, Iowa, United States

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3:45 PM - L6.5
Metal Catalysis-free, Direction-controlled Planar Growth ofSingle-crystalline Alfa-Si3N4 Nanowires on Si (100) Substrate.

Xiaoxin Wang 1 , Jifeng Liu 2 , Qiming Wang 1
1 , Institute of Semiconductors, Beijing China, 2 Materials Science and Engineering, Massachusetts Institute of Technology, Cambrdige, Massachusetts, United States

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4:00 PM - L6: GroupNano2
BREAK

4:30 PM - **L6.6
Nanoscale Transistors: Physics and Materials.

Mark Lundstrom 1
1 Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana, United States

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5:00 PM - L6.7
Ultra Narrow Channel Accumulated Body Si MOSFET with Extreme Threshold Voltage Tunability

Ali Gokirmak 1
1 Electrical and Computer Engineering , Cornell University, Ithaca, New York, United States

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5:15 PM - L6.8
Formation of a Thermally Stable NiSi FUSI Gate Electrode by a Novel Integration Process

Shiang Yu Tan 1 , Chin-Lung Sung 2 , Wen-Fa Wu 2 , Hsien-Chia Chiu 3 , Chun-Yen Hu 3
1 Electrical Engineering, Chinese Culture University, Taipei Taiwan, 2 , National Nano Device Laboratories, Hsinchu Taiwan, 3 Materials Science and Manufacturing , Chinese Culture University, Taipei Taiwan

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5:30 PM - **L6.9
Terahertz Plasma Excitations in Nanometer Gate Length Silicon Field Effect Transistors.

Wojciech Knap 1
1 GES UMR5650, CNRS & Montpellier Univeresity, Montpellier France

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L7: Poster Session: Silicon Nanostructures
Session Chairs
David Lockwood
Thursday AM, November 30, 2006
Exhibition Hall D (Hynes)

9:00 PM - L7.1
Pressure - Stimulated Formation of Light-emitting Si Nanostructures in SiO2.

Gregory Kachurin 1 , Andrzej Misiuk 2 , Svetlana Cherkova 1 , Denis Marin 1 , Vladimir Volodin 1 , Zoya Yanovitskaya 1 , Jedrzej Jedrzejewski 3
1 SO RAN, Institute of Semiconductor Physics, Novosibirsk Russian Federation, 2 , Institute of Electron Technology , Warsaw Poland, 3 , Racah Institute of Physics, Hebrew University, Jerusalem Israel

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9:00 PM - L7.10
Dielectric Matrix Influence on the Photoluminescence Properties of Silicon Nanocrystals.

Luigi Ferraioli 1 , Pierluigi Bellutti 2 , Nicola Daldosso 1 , Massimo Cazzanelli 1 , Viviana Mulloni 2 , Ugur Serincan 3 , Rasit Turan 3 , Alexey Mikhaylov 4 , David Tetelbaum 4 , Lorenzo Pavesi 1
1 Physics, University of Trento, Trento Italy, 2 , ITC-Irst, Trento Italy, 3 Physics, Middle East Technical University, Ankara Turkey, 4 Physico-Technical Research Institute, University of Nizhny Novgorod, Nizhny Novgorod Russian Federation

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9:00 PM - L7.11
Signal Enhancement and Confined Carrier Absorption in Si-nc: Er3+ Waveguides.

Luigi Ferraioli 1 , Daniel Navarro-Urrios 1 , Nicola Daldosso 1 , Fabrice Gourbilleau 2 , Richard Rizk 2 , Youcef Lebour 3 , Paolo Pellegrino 3 , Blas Garrido 3 , Lorenzo Pavesi 1
1 Physics, University of Trento, Trento Italy, 2 SIFCOM, UMR CNRS 6176, ENSICAEN, CAEN France, 3 Electrònica, Universitat de Barcelona, Barcelona Spain

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9:00 PM - L7.12
Fundamental Understanding of Silicon Nanoparticle Growth on Amorphous Silica Surfaces from First Principles Modeling

Chin-Lung Kuo 1 , Gyeong Hwang 1
1 Chemical Engineering, The University of Texas at Austin, Austin, Texas, United States

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9:00 PM - L7.13
Structural, Electronic, and Optical Analysis of Luminescent Si-nanocrystal Systems.

Tyler Roschuk 1 , David Comedi 1 2 3 , Othman Zalloum 1 , Jacek Wojcik 1 , Peter Mascher 1
1 Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario, Canada, 2 , Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) , San Miguel, Tucumán, Argentina, 3 Laboratorio de Física del Sólido, Departamento de Física, FACEyT, Universidad Nacional de Tucumán, San Miguel , Tucumán, Argentina

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9:00 PM - L7.14
Nanometric Chemical Imaging of Strained Silicon Thin Films Using a Combination of Tip Enhanced Raman Spectroscopy & Atomic Force Imaging

Aaron Lewis 2 1 , Hesham Taha 1 2 , Rimma Dekhter 1 , Sophia Kokotov 1 , Galina Fish 1 , David Lewis 1
2 Applied Physics, Hebrew University of Jerusalem, Jerusalem Israel, 1 , Nanonics Imaging, Jerusalem Israel

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9:00 PM - L7.15
Investigation of the Structure and Properties of Vacancies in Si Nano-crystals by Ab Initio Methods.

Scott Beckman 1 , James Chelikowsky 1 2 3
1 Center for Computational Materials, Institute for Computational Engineering Sciences, University of Texas at Austin, Austin, Texas, United States, 2 Department of Physics, University of Texas , Austin, Texas, United States, 3 Department of Chemical Engineering, University of Texas , Austin, Texas, United States

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9:00 PM - L7.16
Nano-sized Crystals of Silicon Embedded in Silica Glass: Large Scale Models and Aspects of the Electronic Structure.

Peter Kroll 1 , Hendrik Schulte 1
1 Inorganic Chemistry, RWTH Aachen University, Aachen Germany

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9:00 PM - L7.17
Laser-induced Phase Transitions in Nanocrystalline Silicon Superlattices.

Leonid Tsybeskov 1
1 ECE, NJIT, Newark, New Jersey, United States

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9:00 PM - L7.18
Instability and Transport of Metal Catalyst in the Growth of Silicon Nanostructures.

Jennifer Atchison 1 , Linyou Cao 1 , Bora Garipcan 2 , Chaoying Ni 3 , Bahram Nabet 4
1 Department of Materials Science and Engineering, and the A.J. Drexel Nanotechnology Institute, Drexel University, Philadelphia, Pennsylvania, United States, 2 Department of Chemical Engineering, Bioengineering Division, Hacettepe University, Beytepe, Ankara, Turkey, 3 W.M. Keck Center for Electron Microscopy, University of Delaware, Newark, Delaware, United States, 4 Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania, United States

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9:00 PM - L7.2
P doping for Si nanostructures using GaP.

Phillip Thompson 1 , Glenn Jernigan 1 , David Simons 2 , Peter Chi 2
1 Code 6812, Naval Research Laboratory, Washington, District of Columbia, United States, 2 , National Institute of Standards and Technology, Gaithersburg, Maryland, United States

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9:00 PM - L7.21
Full Visible Spectrum Emission from Silicon Quantum Dots Synthesized with an All Gas Phase Approach.

Xiaodong Pi 1 , Richard Liptak 2 , Stephen Campbell 2 , Uwe Kortshagen 1
1 Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota, United States, 2 Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota, United States

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9:00 PM - L7.22
Synthesis and Characterization of Silicon Nanocrystals with High Efficiency Photoluminescence.

Lorenzo Mangolini 1 , Uwe Kortshagen 1
1 Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota, United States

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9:00 PM - L7.23
Laser Crystallization of Silicon Thin Films Using Photo Absorption Layer Formed by Spin Coating of Carbon Particles.

Naoki Sano 1 2 , Masato Maki 2 , Nobuyuki Andoh 2 , Toshiyuki Sameshima 2
1 , Hightec Systems Corporation, Yokohama, Kanagawa, Japan, 2 , Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan

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9:00 PM - L7.24
Controlled Growth of Ni Silicide Nanostructures by Chemical Vapor Deposition.

Joondong Kim 1 2 , Moon-Ho Jo 1 , Wayne Anderson 2
1 Materials Science and Engineering, Pohang University of Science and Technology, Pohang Korea (the Republic of), 2 Electrical Engineering, University at Buffalo, Buffalo, New York, United States

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9:00 PM - L7.3
Photoluminescence from Er-doped Si-rich SiO2 films: A two-step annealing processes to control efficient light emission from both Er ions and nanostructures

Chenglin Heng 1 , Othman Zalloum 1 , Jacek Wojcik 1 , Peter Mascher 1
1 Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario, Canada

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9:00 PM - L7.4
Comparison of Laser Beam Annealing with Thermal Annealing of a-SiC Layer in Si-QD LED Structure.

Kyung-Hyun Kim 1 , Jae-Heon Shin 1 , Chul Huh 1 , Kwan-Sik Cho 1 , Jong Cheol Hong 1 , Gun Yong Sung 1
1 , ETRI, Daejeon Korea (the Republic of)

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9:00 PM - L7.5
Silicon Nanocrystals Fabricated by Novel Plasma Enhanced Hydrogenation Technique Suitable for Light Emitting Devices.

Mehdi Jamei 1 , Farshid Karbassian 1 , Shamsoddin Mohajerzadeh 1 , Yaser Abdi 1 , Michael Robertson 2
1 Thin Film and Nanoelectronic Lab, University of Tehran, Tehran Iran (the Islamic Republic of), 2 Department of Physics, Acadia University, Wolfvile, Nova Scotia, Canada

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9:00 PM - L7.6
Formation of Si and Ge Nanocrystals in Sapphire Marix by Ion Implantation.

Selcuk Yerci 1 , Ilker Yildiz 1 , Ayse Seyhan 1 , Mustafa Kulakci 1 , Michael Shandalov 2 , Ugur Serincan 1 , Yoval Golan 2 , Rasit Turan 1
1 Physics, Middle East Technical University, Ankara Turkey, 2 , Ben-Gurion University of the Negev, Be'er Sheva Israel

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9:00 PM - L7.7
Nucleation Process During Excimer Laser Annealing of Amorphous Silicon Thin Films on Glass: A Molecular-dynamics Study.

Shinji Munetoh 1 , Takanori Mitani 1 , Takahide Kuranaga 1 , Teruaki Motooka 1
1 Department of Materials Science and Engineering, Kyushu University, Fukuoka Japan

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9:00 PM - L7.8
Geometric Effects of Nickel Island on Electrical Characteristics of Low Temperature Poly-Si Thin Film Transistor

Min-Sun Kim 1 , Jang-Sik Lee 2 , Nam-kyu Song 1 , Seung-Ki Joo 1
1 School of Material Science and Engineering, Seoul National University, Seoul, Seoul, Korea (the Republic of), 2 School of Advanced Materials Engineering, Kookmin University, Seoul, Seoul, Korea (the Republic of)

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2006-11-30   Show All Abstracts

Symposium Organizers

Leonid Tsybeskov New Jersey Institute of Technology
David J. Lockwood National Research Council
Christophe Delerue IEMN
Masakazu Ichikawa The University of Tokyo
Anthony W. van Buuren Lawrence Livermore National Laboratory
L8: Si Nanocrystals
Session Chairs
Christophe Delerue
Jan Linnros
Thursday AM, November 30, 2006
Room 207 (Hynes)

9:30 AM - **L8.1
Probing the Luminescence from a Single Silicon Quantum Dot.

Ilya Sychugov 1 , Robert Juhasz 1 , Jan Valenta 2 , Jan Linnros 1
1 Microelectronics, Royal Institute of Technology, Kista-Stockholm Sweden, 2 Chemical Physics and Optics, Charles University, Prague Czech Republic

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10:00 AM - L8.2
Pronounced Photonic Effects of High-Pressure Water Vapor Annealing on Nanocrystalline Porous Silicon.

Bernard Gelloz 1 , Nobuyoshi Koshida 1
1 , Tokyo Univ. A&T, Tokyo Japan

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10:15 AM - L8.3
Forming Nano- to Micro-Size Pores in Silicon by Wet Process Using Metallic Catalysts.

Kazuya Tsujino 1 , Michio Matsumura 1
1 Research Center for Solar Energy Chemistry, Osaka University, Toyonaka, Osaka, Japan

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10:30 AM - L8.4
Hydrogen Desorption from Aerosolized Silicon Nanoparticles.

Jeffrey Roberts 1 , Jason Holm 2
1 Chemistry, University of Minnesota, Minneapolis, Minnesota, United States, 2 Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota, United States

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11:00 AM - L8: Nanocrystals
BREAK

11:30 AM - L8.6
Non-linear Optical Properties of Si Nanocrystals.

Rita Spano 1 , Luigi Ferraioli 1 , Massimo Cazzanelli 1 , Nicola Daldosso 1 , Zeno Gaburro 1 , Luca Tartara 2 , Jin Yu 2 , Vittorio Degiorgio 2 , Youcef Lebour 3 , Sergi Hernandez 3 , Paolo Pellegrino 3 , Blas Garrido 3 , Emmanuel Jordana 4 , Jean Fedeli 4 , Lorenzo Pavesi 1
1 Physics, University of Trento, Trento Italy, 2 Electronics, University of Pavia, Pavia Italy, 3 Electrònica, Universitat de Barcelona, Barcelona Spain, 4 , CEA-LETI, Grenoble France

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11:45 AM - L8.7
Er3+ Excited State Absorption and the Low Fraction of Nanocluster-excitable Er3+ in SiOx.

Claudio Oton 1 , Wei Loh 1 , Ijaz Ahmad 2 , Anthony Kenyon 2
1 Optoelectronics Research Centre, University of Southampton, Southampton, Hampshire, United Kingdom, 2 Department of Electronic & Electrical Engineering, University College London, London United Kingdom

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12:00 PM - L8.8
Water-Dispersible Photoluminescent Silicon Nanocrystals for Biophotonic Applications

Folarin Erogbogbo 1 , Seiichi Sato 2 1 , Mark Swihart 1
1 Chemical and Biological Engineering, The University at Buffalo (SUNY), Buffalo, New York, United States, 2 Graduate School of Material Science, University of Hyogo, Hyogo Japan

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12:15 PM - L8.9
The role of Local Fields in the Optical Properties of Silicon Nanocrystals.

Fabio Trani 1 , Domenico Ninno 1 2 , Giovanni Cantele 2 , Giuseppe Iadonisi 1 2
1 Department of Physics, University "Federico II", Naples Italy, 2 , Coherentia CNR-INFM, Naples Italy

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12:30 PM - L8.10
Understanding of the Synthesis and Structure of Si Nanocrystals in an Oxide Matrix from First Principles Based Atomistic Modeling

Sangheon Lee 1 , Decai Yu 1 , Gyeong Hwang 1
1 Chemical Engineering, The University of Texas at Austin, Austin, Texas, United States

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12:45 PM - L8.11
Electronic and Optical Properties of Co-doped Si Nanocrystallites

Luis Ramos 1 , Juergen Furthmueller 1 , Friedhelm Bechstedt 1
1 Institut fuer Festkoerpertheorie und -optik, Friedrich-Schiller-Universitaet Jena, Jena, Thueringen, Germany

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L9: Diamond Nanoclusters / Novel Si / Si Ge Nanostructures
Session Chairs
Neil Drummond
Anthony van Buuren
Thursday PM, November 30, 2006
Room 207 (Hynes)

2:30 PM - **L9.1
Electronic Structure of Size-selected, Monodisperse Diamond Clusters (Diamondoids).

Christoph Bostedt 1 , Lasse Landt 1 , Konstantin Lenzke 1 , Trevor Willey 2 , Tony van Buuren 2 , Jeremy Dahl 3 , S. Liu 3 , Robert Carlson 3 , Louis Terminello 2 , Thomas Moeller 1
1 , Technische Universitat Berlin, Berlin Germany, 2 , Lawrence Livermore National Laboratory, Livermore, California, United States, 3 , Chevron MolecularDiamond Technologies, Richmond, California, United States

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3:00 PM - L9.2
Thiol-Modified Diamondoid Monolayers on Gold Studied with Near-Edge X-ray Absorption Fine Structure Spectroscopy.

Trevor Willey 1 , Jason Fabbri 2 , Jonathan Lee 1 , P. Schreiner 3 , A. Fokin 3 , B. Tkachenko 3 , N. Fokina 3 , J. Dahl 4 , S. Liu 4 , R. Carlson 4 , T. van Buuren 1 , N. Melosh 2
1 Chemistry and Materials Science, Lawrence Livermore National Laboratory, Livermore, California, United States, 2 Materials Science and Engineering, Stanford University, Stanford, California, United States, 3 Department of Chemistry, Justus-Liebig University, Giessen Germany, 4 MolecularDiamond Technologies, , Richmond, California, United States

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3:15 PM - L9.3
Mechanical Properties of Solution Grown Diamondoid Single Crystals and Diamondoid LB Films.

Jason Fabbri 1 , Wendelin Wright 1 , William Nix 1 , Arturas Vailionis 1 , Trevor Willey 2 , Jon Lee 2 , Peter Schreiner 3 , Jeremy Dahl 4 , Nicholas Melosh 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Chemistry and Materials Science, Lawrence Livermore National Lab, Livermore, California, United States, 3 Chemistry, Justus-Liebig University of Giessen, Giessen Germany, 4 MolecularDiamond Technologies, Chevron Technolgy Ventures, Richmond, California, United States

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3:30 PM - **L9.4
Electron Emission from Diamondoids: a DMC Study.

Neil Drummond 1
1 , University of Cambridge, Cambridge United Kingdom

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4:00 PM - L9: DiamondsEtc
BREAK

4:15 PM - **L9.5
New Tricks with Silicon

Oliver Schmidt 1
1 , Max-Planck-Institute for Solid State Research, Stuttgart Germany

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4:45 PM - L9.6
Ion-beam Synthesis of Er Doped Ge Nanofoams.

S. Kucheyev 1 , T. Felter 1 , A. Hamza 1 , J. Bradby 2
1 , Lawrence Livermore National Laboratory, Livermore, California, United States, 2 , Australian National University, Canberra, Australian Capital Territory, Australia

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5:00 PM - L9.7
Formation of Ge quantum dots by pulsed laser deposition.

Mohammed Hegazy 1 2 , Hani Elsayed-Ali 1 2
1 Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia, United States, 2 Physical Electronics Research Institute, Old Dominion University, Norfolk, Virginia, United States

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5:15 PM - **L9.8
The Delightful Properties of Silicon Nanomembranes.

Max Lagally 1
1 , University of Wisconsin-Madison, Madison, Wisconsin, United States

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5:45 PM - L9.9
Front and Back Gated Silicon Nanomembranes for the Formation of Patterned Inversion Layer Quantum Devices.

Eric Nordberg 1 , Weina Peng 1 , Lisa McGuire 1 , Keith Slinker 1 , Mark Eriksson 1
1 Physics, University of Wisconsin, Madison, Wisconsin, United States

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L10: Poster Session: Si and SiGe Nanostructures
Session Chairs
Christophe Delerue
Friday AM, December 01, 2006
Exhibition Hall D (Hynes)

9:00 PM - L10.11
Focused Electron Beam Chemical Vapor Deposition of a Periodic Silicon Carbide Nano-pattern.

Lan Sun 1 2 , William White 3 , Konrad Rykaczewski 3 , Gracy Wingkono 4 , Andrei Fedorov 3 , Thomas Orlando 2 1
1 School of Physics, Georgia Institute of Technology, Atlanta, Georgia, United States, 2 School of Chemistry & Biochemistry, Georgia Institute of Technology, Atlanta, Georgia, United States, 3 School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States, 4 School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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9:00 PM - L10.12
Light Emission from Ge/Si and Si Nanostructures Grown on Oxidized Si Surfaces.

Alexander Shklyaev 1 , Yoshiaki Nakamura 1 , Masakazu Ichikawa 1
1 , The University of Tokyo, Tokyo Japan

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9:00 PM - L10.13
Time Evolution of Nano-scale Morphology of Silicon Microstructure Surfaces in the Early Phase of Hydrogen Annealing

Reiko Hiruta 1 , Hitoshi Kuribayashi 1 , Ryosuke Shimizu 2 , Koichi Sudoh 3 , Hiroshi Iwasaki 3
1 Semiconductor Technology Laboratory, Fuji Electric Advanced Technology Co. Ltd., Matsumoto, Nagano, Japan, 2 Material and Science Laboratory, Fuji Electric Advanced Technology Co. Ltd., Hino, Tokyo, Japan, 3 The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, Japan

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9:00 PM - L10.15
Ultra Long Uniform Silicon Nanocables and its Application in MOSFETs

Mingliang Zhang 1
1 Biology and Chemistry, City University of Hong Kong, Hong Kong Hong Kong

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9:00 PM - L10.16
Probing Monolayer Stability through Chemical Reactions on Functionalized Porous Silicon.

Lon Porter 1 , Steven Rhodes 1 , Syud Ahmed 1 , Wassim Labaki 1
1 Chemistry, Wabash College, Crawfordsville, Indiana, United States

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9:00 PM - L10.17
Structural and Mechanical Properties of Si/Ge Nanowire Heterostructures.

Yuichi Yano 1 , Takaaki Nakajima 1 , Kazuhito Shintani 1
1 Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, Chofu, Tokyo, Japan

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9:00 PM - L10.18
Single Crystalline Silicon Nanoribbons.

Tae-Eon Park 1 , Han-Kyu Seong 1 , Ryong Ha 1 , Hanah Jeong 1 , Jea-Heon Shin 2 , Gun Yong Sung 2 , Heon-Jin Choi 1
1 School of Advanced Materials Science and Engineering, Yonsei University , Seoul Korea (the Republic of), 2 IT Convergence & Components Lab., Electronics and Telecommunications Research Institute (ETRI), Daejeon Korea (the Republic of)

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9:00 PM - L10.19
Biological Properties of Nanocrystalline Silicon Particles for Biomedical Applications

Keisuke Sato 1 , Satoshi Yanagisawa 1 , Kenji Hirakuri 1
1 Dep.of Electronic and Computer Engineering, Tokyo Denki University, Hikigun, Saitama, Japan

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9:00 PM - L10.20
Study on the Memory Effect of Si Nanostructures Self-embedded Silicon Nitride Thin Film

Zingway Pei 1 , Huey Hwang 2
1 Department of Electrical Engineering, National Chung Hsing University, Taichung Taiwan, 2 Department of Electrial Engineering, National Tsing Hua University, Hsinchu Taiwan

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9:00 PM - L10.21
SOI-based Silicon Quantum Dots Contacted by Self-aligned Nano-electrodes.

Conrad Wolf 1 , Andreas Ladenburger 1 , Rainer Enchelmaier 1 , Klaus Thonke 1 , Rolf Sauer 1
1 Institut für Halbleiterphysik, Universität Ulm, Ulm Germany

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9:00 PM - L10.22
Effect of Surface Passivation on Stability of Luminescence from Nanocrystalline Silicon Particles in Pure Water.

Masaki Hiruoka 1 , Tetsuya Matsumoto 1 , Takahiro Oku 1 , Keisuke Sato 1 , Kenji Hirakuri 1
1 Dep.of Electronic and Computer Engineering, Tokyo Denki University, Hikigun, Saitama, Japan

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9:00 PM - L10.23
Optical Properties of Multiple, Delta-doped Si:B/Si Layers.

Han-Yun Chang 1 , Eun-Kyu Lee 1 , Boris Kamenev 1 , Jean-Marc Baribeau 2 , David Lockwood 2 , Leonid Tsybeskov 1
1 Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey, United States, 2 Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada

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