Meetings & Events

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2009 MRS Fall Meeting & Exhibit

November 30 - December 4, 2009 | Boston
Meeting Chairs
: Kristi Anseth, Li-Chyong Chen, Peter Gumbsch, Ji-Cheng Zhao

Symposium A : High-k Dielectrics on Semiconductors with High Carrier Mobility

2009-11-30   Show All Abstracts

Symposium Organizers

Minghwei Hong National Tsing Hua University
Wilman Tsai Intel Corporation
Athanasios Dimoulas National Center for Scientific Research “Demokitos”
Peide (Peter) D. Ye Purdue University
A1: High-<i>k</i> Dielectrics
Session Chairs
Raj Jammy
Raynien Kwo
Monday AM, November 30, 2009
Republic A (Sheraton)

9:30 AM - **A1.1
Structural Characteristics of High-k Dielectrics / Semiconductors Heteroepitaxial Systems.

Chia-Hung Hsu 1 2 , J. Kwo 3
1 Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu Taiwan, 2 Department of Photonics, National Chiao Tung University, Hsinchu Taiwan, 3 Department of Physics, National Tsing Hua University, Hsinchu Taiwan

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10:00 AM - A1.2
Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy.

Leonardo Miotti 1 , Karen Paz Bastos 1 , Gerald Lucovsky 1
1 Department of Physics, North Carolina State University, Raleigh, North Carolina, United States

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10:15 AM - A1.3
Effect of La and Al Doping on the Band Alignment at the SiO2 /HfO2 Interface.

Xuhui Luo 1 , Alex Demkov 1
1 Department of Physics , University of Texas at Austin, Austin, Texas, United States

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10:30 AM - A1.4
Rare-earth Oxide Thin Films for High-k Dielectric by Atomic Layer Deposition.

Jun-Jieh Wang 1 , Venkateswara Pallem 1 , Christian Dussarrat 1
1 , American Air Liquide, Inc., Newark, Delaware, United States

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10:45 AM - A1.5
Photoelectron Spectroscopy Study of Rare-Earth Oxide Films Deposited by Atomic Layer Deposition.

Conan Weiland 1 , Nicholas Lorenz 1 , Robert Opila 1
1 Materials Science and Engineering, University of Delaware, Newark, Delaware, United States

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11:00 AM -
BREAK

A2: Simulation
Session Chairs
Tso-Ping Ma
Monday AM, November 30, 2009
Republic A (Sheraton)

11:30 AM - **A2.1
Performance Comparison of Si and III-V MOSFETs beyond the 15nm Node.

Mark Lundstrom 1 , Yang Liu 1 , Himadri Pal 1 , Mathieu Luisier 1
1 ECE, Purdue, West Lafayette, Indiana, United States

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12:00 PM - A2.2
Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices.

Mathieu Moreau 1 , Daniela Munteanu 1 , Jean-Luc Autran 1 2 , Florence Bellenger 3 , Jerome Mitard 3 , Michel Houssa 4
1 , IM2NP-CNRS, Marseille France, 2 , IUF, Paris France, 3 , IMEC, Leuven Belgium, 4 , K. U. Leuven, Leuven Belgium

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12:15 PM - A2.3
Physics of Polymorphic Silicide Interfaces; First-principles Study of Stability, Doping, and Schottky Barrier.

Takashi Nakayama 1 , Shinichi Sotome 1
1 Physics Department, Chiba University, Chiba Japan

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12:30 PM - A2.4
Simulations of Short-channel Effects and Interface Traps in In0.75Ga0.25As MOSFET with ALD Al2O3 as Gate Dielectric.

Ozhan Koybasi 1 , Yanqing Wu 1 , Min Xu 1 , Peide Ye 1
1 Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, United States

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12:45 PM - A2.5
Large-Scale Modeling of GeO2/Ge and SiO2/Si Interface Structures.

Tomoya Onda 1 , Hideaki Yamamoto 1 , Ryo Tosaka 1 , Takanobu Watanabe 1
1 , Waseda university, Japan, Tokyo Japan

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A3: GaN
Session Chairs
Jean Fompeyrine
Andrew Kummel
Monday PM, November 30, 2009
Republic A (Sheraton)

2:30 PM - **A3.1
Enhancement-mode Inversion-channel and Depletion-mode GaN MOSFETs using Atomic-layer-deposited Al2O3 and HfO2 as Gate Dielectrics.

Yao-Chung Chang 1 , Wen-Hsin Chang 1 , Yu-Hsing Chang 1 , Raynien Kwo 2 , James M. Hong 3 , Jacky C. C. Tsai 3 , Minghwei Hong 1
1 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan, 2 Department of Physics, National Tsing Hua University , Hsinchu Taiwan, 3 , HUGA Optotech Inc., Taichung Taiwan

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3:00 PM - A3.2
Electrical and Interfacial Studies of HfO2 Thin Films as high k Metal Gate Dielectric Layer on SiC Devices.

Shiva Hullavarad 1 , Nilima Hullavarad 1
1 Office of Electronic Miniaturization, University of Alaska Fairbanks, Fairbanks, Alaska, United States

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3:15 PM - A3.3
Physical and Electrical Interface Structure of Crystalline Oxides on GaN.

Fred Walker 1 , A. Posadas 1 , C. F. Vaz 1 , V. Henrich 1 , C. Ahn 1
1 Center for Research on Interface Structure and Phenomena, Yale University, New Haven, Connecticut, United States

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3:30 PM - A3.4
The Importance of Chemical Bonding and Crystal Symmetry at the Heteroepitaxial Interface Between Oxides Epilayers and Gallium Nitride Surfaces.

Mark Losego 1 , Lena Fitting Kourkoutis 2 , Ramon Collazo 1 , Seiji Mita 1 , David Muller 2 , Zlatko Sitar 1 , Jon-Paul Maria 1
1 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 Materials Science and Engineering, Cornell University, Ithaca, New York, United States

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3:45 PM - A3.5
Interface Structure of Epitaxially Deposited La2O3 and Sc2O3 Dielectrics on Gallium Nitride for MOS Applications.

Mark Johnson 1 , Virginia Wheeler 1 , Dan Lichtenwalner 1 , Matt Veety 1 , Doug Barlage 1
1 , North Carolina State University, Raleigh, North Carolina, United States

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4:00 PM -
BREAK

A4: Substrates and Devices
Session Chairs
Alfredo Pasquarello
Wei-E Wang
Monday PM, November 30, 2009
Republic A (Sheraton)

4:30 PM - **A4.1
High Performance Scaled Alternative Channel MOSFETs with High Carrier Injection Velocities

Raj Jammy 1 , Jungwoo Oh 1 , Niti Goel 1 , Injo Ok 1 , Jeff Huang 1 , Prashant Majhi 1 , Paul Kirsch 1
1 , SEMATECH, Austin, Texas, United States

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5:00 PM - A4.2
Stress Liner Proximity Technique to Enhance Carrier Mobility in High-K Metal Gate MOSFETs.

Dechao Guo 1 , Kathryn Schonenberg 2 , Jie Chen 3 , Daniel Jaeger 2 , Pranita Kulkarni 1 , Unoh Kwon 2 , Yue Liang 2 , Joyce Liu 2 , Liyang Song 2 , Franck Arnaud 4 , Huiming Bu 1 , Michael Chudzik 2 , William Henson 2 , Philip Oldiges 2 , Melanie Sherony 2 , An Steegan 2 , Voon-Yew Thean 2 , Mukesh Khare 1
1 , IBM T.J. Watson Research Center, Yorktown Heights, New York, United States, 2 , IBM Semiconductor Research and Develeopment Center, Hopewell Junction, New York, United States, 3 , Chartered Semiconductor Manufacturing, Hopewell Junction, New York, United States, 4 , STMicroelectronics, Hopewell Junction, New York, United States

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5:15 PM - A4.3
Channel Strain Analysis in Damascene-gate pMOSFETs on Si (100) and (110) Substrates by Plane and Cross-sectional Raman Measurements.

Munehisa Takei 1 , Daisuke Kosemura 1 , Kohki Nagata 1 , Hiroaki Akamatsu 1 , Satoru Mayuzumi 2 1 , Shinya Yamakawa 2 , Hitoshi Wakabayashi 2 , Atsushi Ogura 1
1 School of Science and Technology, Meiji University, Kawasaki Japan, 2 Atsugi Tec, Sony Corporation, Atsugi Japan

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5:30 PM - A4.4
SiGe Channels for Higher Mobility CMOS Devices.

Andreas Naumann 1 2 , Torben Kelwing 1 2 , Martin Trentzsch 2 , Thorsten Kammler 2 , Stephan Kronholz 2 , Peter Kuecher 1 , Johann Bartha 3
1 , Fraunhofer-Center Nanoelectronische Technologien, Dresden Germany, 2 , GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Dresden Germany, 3 Institut für Halbleiter- und Mikrosystemtechnik, Technische Universistät Dresden, Dresden Germany

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5:45 PM - A4.5
Formation of High Quality Colossal Ge-on-Insulator by Liquid-Phase Epitaxy from Si Substrate.

Takanori Tanaka 1 , Yasuharu Ohta 1 , Kaoru Toko 1 , Masaru Itakura 2 , Taizoh Sadoh 1 , Masanobu Miyao 1
1 Dept. Electronics, Kyushu University, Fukuoka Japan, 2 Dept. ASEM, Kyushu University, Fukuoka Japan

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A5: Poster Session
Session Chairs
Minghwei Hong
Wilman Tsai
Peide (Peter) Ye
Monday PM, November 30, 2009
Exhibit Hall D (Hynes)

9:00 PM - A5.1
Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy.

Tatsuya Hashimoto 1 , Chiaki Yoshimoto 1 , Takuji Hosoi 1 , Takayoshi Shimura 1 , Heiji Watanabe 1
1 Material & Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan

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9:00 PM - A5.10
Novel Zirconium Formamidinate Precursor for ZrO2 ALD Application.

Huazhi Li 1 , Deo Shenai 1
1 Dow Electronic Materials, The Dow Chemical Company, North Andover, Massachusetts, United States

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9:00 PM - A5.11
Improved Dielectric Phase and Interfacial Dipole Control of Gd2O3-doped HfO2 Gate Dielectrics by Co-sputtering Technique.

Pai-Chi Chou 1 , Jer-Chyi Wang 1 , Woei-Cherng Wu 2 , Chao-Sung Lai 1
1 , Chang Gung University, Tao-Yuan Taiwan, 2 department of electrophysics, National Chiao Tung University, Hsinchu Taiwan

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9:00 PM - A5.12
High Performance SnO2 Nanowire FETs with a high-k Al Doped TiO2 high-k Gate Insulator.

Hyun Hee Park 1 , Pil Soo Kang 2 , Jeong Sook Ha 1 , Gyu Tae Kim 2
1 Department of Chemical and Biological Engineering, Korea University, Seoul Korea (the Republic of), 2 School of Electrical Engineering, Korea University, Seoul Korea (the Republic of)

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9:00 PM - A5.2
Structural and Dielectric Characterization of Interlanthanide LaGdO3 Ceramic and Thin Films for High-k Application.

Shojan Pavunny 1 , R. Thomas 1 , N. Karan 1 , J. Schubert 2 , R. Katiyar 1
1 Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico, United States, 2 , Institute of Bio-and Nano-Systems (IBN1-IT) and JARA-Fundamentals of Future Information Technology, Research Centre , Jülich Germany

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9:00 PM - A5.3
Identification of Impurity Contained in LaAlO3 by Photoluminescence.

Eiji Hirata 1 , Yoshimichi Ohki 1
1 Electrical Engineering and Bioscience, Waseda University, Shinjuku, Tokyo, Japan

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9:00 PM - A5.5
Electrostatic Passivation of Peripheral Interface Trap Charges and Electrostatic Doping in Accumulated Body Transistors.

Mustafa Akbulut 1 , Faruk Dirisaglik 1 , Ali Gokirmak 1
1 Electrical Engineering, University of Connecticut, Storrs, Connecticut, United States

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9:00 PM - A5.6
Effective Work Functions of TiCxN1-x in Contact with HfO2 Through ab initio Simulations.

Hong Zhu 1 , Rampi Ramprasad 1
1 Department of Chemical, Materials & Biomolecular Engineering, Institute of Materials Science, University of Connecticut, Storrs, Connecticut, United States

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9:00 PM - A5.7
Interaction of an Oxygen Molecule with GaAs (001)-β2(2×4) Surface: First Principles Study.

Dae-Hyun Kim 1 , Dae-Hee Kim 1 , Hwa-Il Seo 2 , Yeong-Cheol Kim 1
1 Department of Materials Engineering, Korea University of Technology & Education, Chonan Korea (the Republic of), 2 School of Information Technology, Korea University of Technology & Education, Chonan Korea (the Republic of)

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9:00 PM - A5.8
Composition Dependence of the Dielectric Properties of Ta-Ge-O Thin Films.

Taro Naoi 1 , Sara Barron 1 , R. Bruce van Dover 1
1 Materials Science and Engineering, Cornell University, Ithaca, New York, United States

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9:00 PM - A5.9
Atomic-layer-deposited Al2O3 and HfO2 on InGaAs – Electrical and Interfacial Micro-structural and Chemical Characteristics.

Yi Jiun Lee 1 , Mao Lin Huang 3 , Yao Chung Chang 1 , Yu Hsing Chang 1 , Han Chin Chiu 1 , Pen Chang 1 , J. Raynien Kwo 2 , Minghwei Hong 1
1 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan, 3 , National Synchrotron Radiation Research Center, Hsinchu Taiwan, 2 Physics, National Tsing Hua University, Hsinchu Taiwan

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2009-12-01   Show All Abstracts

Symposium Organizers

Minghwei Hong National Tsing Hua University
Wilman Tsai Intel Corporation
Athanasios Dimoulas National Center for Scientific Research “Demokitos”
Peide (Peter) D. Ye Purdue University
A6: Ge and III-V: Device Structures
Session Chairs
Amy Liu
Tetsuji Yasuda
Tuesday AM, December 01, 2009
Republic A (Sheraton)

9:30 AM - **A6.1
Research Advances on III-V and Ge MOSFETs Beyond Si CMOS.

J. Raynien Kwo 1 , Minghwei Hong 2
1 Physics, National Tsing Hua University , Hsinchu Taiwan, 2 Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan

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10:00 AM - **A6.2
Scattering Mechanisms in Buried InGaAs/High-k Channels

S. Oktyabrsky 1 , Padmaja Nagaiah 1 , Rama Kambhampati 1 , Vadim Tokranov 1 , Michael Yakimov 1 , Sergei Koveshnikov 2 , Niti Goel 2 , Wilman Tsai 2
1 , University at Albany, Albany, New York, United States, 2 , Intel Corporation, Santa Clara, California, United States

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10:30 AM - A6.3
Charge Pumping Characterization of Interface Traps in Atomic-layer Deposited Al2O3/In1-xGaxAs Metal-oxide-semiconductor Field-effect Transistors.

Weike Wang 1 , James Hwang 1 , Yi Xuan 2 3 , Peide Ye 2 3
1 Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania, United States, 2 Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, United States, 3 Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, United States

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10:45 AM - A6.4
Structural and Thermal Stability Study of Al2O3/GGO/In0.2Ga0.8As/GaAs Upon High Temperature Annealing.

Yi Jiun Lee 1 , Pen Chang 1 , Tsung Hung Chiang 1 , Cho Ying Chuang 2 , Chih hsun Lee 1 , Shao Yun Wu 1 , Te Yang Lai 1 , J. Raynien Kwo 2 , Chia Hung Hsu 3 , Minghwei Hong 1
1 Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan, 2 Physics, National Tsing Hua University , Hsinchu Taiwan, 3 , National Synchrotron Radiation Research Center, Hsinchu Taiwan

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11:00 AM -
BREAK

11:30 AM - **A6.5
CMOS Technologies with High-electron Mobility III-V Channels and High-k Gate Stacks.

Tso-Ping Ma 1 , Abigail Lubow 1
1 Electrical Engineering, Yale University, New Haven, Connecticut, United States

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12:00 PM - **A6.6
III-V Metal-Oxide-Semiconductor Structures with Silicon Passivation Interlayer: Facts and Future.

Chiara Marchiori 1 , Christian Gerl 1 , Mirja Richter 1 , Daniele Caimi 1 , Dave Webb 1 , Christophe Rossel 1 , Maryline Sousa 1 , Heinz Siegwart 1 , Caroline Andersson 1 , Jean Fompeyrine 1
1 Zurich Research Laboratory, IBM Research GmbH, Rueschlikon Switzerland

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12:30 PM - A6.7
High-performance III-V MOSFETS with ALD High-κ LaLuO3.

Yiqun Liu 1 , Yanqing Wu 2 , Min Xu 2 , Jun-Jieh Wang 1 , Peide Ye 2 , Roy Gordon 1
1 Department of Chemistry and Chemical Biology, Harvard, Cambridge, Massachusetts, United States, 2 School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, United States

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12:45 PM - A6.8
ALD-Al2O3 as an Interlayer for Ge MOS Devices with Higher-k Dielectrics.

Shankar Swaminathan 1 , Yasuhiro Oshima 2 1 , Michael Shandalov 1 , Paul McIntyre 1
1 , Stanford University, CA, Stanford, California, United States, 2 , Tokyo Electron U.S. Holdings, Incorporated, Santa Clara, California, United States

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A7: Ge and III-V: Gate Dielectrics
Session Chairs
Athanasios Dimoulas
Chia-Hung Hsu
Tuesday PM, December 01, 2009
Republic A (Sheraton)

2:30 PM - **A7.1
High Mobility Channel Materials and Novel Devices for Scaling of Nanoelectronics beyond the Si Roadmap.

Marc Heyns 1 2 , Florence Bellenger 1 , Guy Brammertz 1 , Matty Caymax 1 , Stefan De Gendt 1 , Brice De Jaeger 1 , Annelies Delabie 1 , Geert Eneman 1 , Guido Groeseneken 1 , Michel Houssa 3 , Daniele Leonelli 1 , Dennis Lin 1 , Koen Martens 1 , Clement Merckling 1 , Marc Meuris 1 , Jerome Mitard 1 , Julien Penaud 4 , Geoffrey Pourtois 1 , Marco Scarrozza 1 , Eddy Simoen 1 , Sven Van Elshocht 1 , William Vandenberghe 1 , Anne Vandooren 1 , Anne Verhulst 1 , Wei-E Wang 5
1 , IMEC, Leuven Belgium, 2 Metallurgy and Materials Engineering, K.U.Leuven, Leuven Belgium, 3 Physics, K.U.Leuven, Leuven Belgium, 4 , Riber assignee at IMEC, Leuven Belgium, 5 , INTEL assignee at IMEC, Leuven Belgium

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3:00 PM - A7.2
Impact of Plasma Nitridation on Physical and Electrical Properties of Ultrathin Thermal Oxides on Ge(100).

Katsuhiro Kutsuki 1 , Gaku Okamoto 1 , Takuji Hosoi 1 , Takayoshi Shimura 1 , Heiji Watanabe 1
1 Graduate School of Engineering, Osaka University, Suita, Osaka, Japan

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3:15 PM - A7.3
Structural, Chemical and Electrical Characterisation of La-doped ZrO2 and Er-doped HfO2 Films Deposited on Ge Substrates.

Simon Elliott 1 , Pierre-Eugene Coulon 2 , Sylvie Schamm 2 , Claudia Wiemer 3 , Luca Lamagna 3 , Silvia Baldovino 3 , Marco Fanciulli 3 4
1 , Tyndall National Institute, Cork Ireland, 2 , CEMES-CNRS, Toulouse France, 3 Laboratorio Nazionale MDM, CNR-INFM, Agrate Brianza (MB) Italy, 4 Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano Italy

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3:30 PM - A7.4
Effects of Post-Deposition Annealing on the Characteristics of LaLuO3/Ge(100) Structures.

Claudio Radtke 1 , Gabriel Marmitt 1 , Cristiano Krug 2 , Gabriel Soares 3 , Israel J. Baumvol 2 3 , Joao M. Lopes 4 5 , E. Durgun-Ozben 4 5 , J. Schubert 4 5 , S. Mantl 4 5
1 , IQ-UFRGS, Porto Alegre, RS, Brazil, 2 , IF-UFRGS, Porto Alegre, RS, Brazil, 3 CCET, UCS, Caxias do Sul, RS, Brazil, 4 Institute for Bio- and Nanosystems (IBN1-IT), Research Center Juelich, Juelich Germany, 5 , JARA-Fundamentls of Future Information Technologies, Juelich Germany

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3:45 PM - A7.5
In-situ X-ray Photoelectron Spectroscopy Study of As Decapping and Half Cycle Reactions During ALD of Al2O3 on In0.53Ga0.47As(001).

Byungha Shin 1 , Michael Kelly 1 , Paul McIntyre 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States

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4:00 PM -
BREAK

4:15 PM - **A7.6
Catalytic Forming Gas Anneal on III-V/Ge MOS Systems.

Wei-E Wang 1 , Han-Chung Lin 2 , Guy Brammertz 2 , Eddy Simoen 2 , Annelies Delabie 2 , Sonja Sioncke 2 , Matty Caymax 2 , Marc Meuris 2 , Marc Heyns 2
1 , Intel c/o IMEC, Leuven Belgium, 2 , IMEC, Leuven Belgium

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4:45 PM - A7.7
Study on Electronic and Crystal Structures in an Atomic-layer-deposited HfO2 Film on a GaAs (100) Substrate as a Function of Post-annealing Temperature.

Chung Yi Kim 1 , Sun Young Lee 1 , Mann-Ho Cho 1 , Kwun-Bum Chung 2 , Dae Hong Ko 3 , Hyugsub Kim 4 , Hoojung Lee 4
1 Physics, Yonsei University , Seoul Korea (the Republic of), 2 Physics, North Carolina State University, Raleigh, North Carolina, United States, 3 Material Science and Engineering, Yonsei University, Seoul Korea (the Republic of), 4 School of Materials Science and Engineering, Sungkyunkwan University, Seoul Korea (the Republic of)

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5:00 PM - A7.8
Energy-band Parameters of Atomic-layer-deposited Al2O3 and HfO2 on InGaAs.

Mao-Lin Huang 1 3 , Yao-Chung Chang 1 , Yu-Hsing Chang 1 , Tsung-Da Lin 1 , Pen Chang 1 , Minghwei Hong 1 , J. Raynien Kwo 2
1 Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan, 3 Research Division, National Synchrotron Radiation Research Center, Hsinchu Taiwan, 2 Physics, National Tsing Hua University , Hsinchu Taiwan

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5:15 PM - A7.9
Native Point Defects in Al2O3 and Their Impact on Devices.

Justin Weber 1 , Chris Van de Walle 2
1 Department of Physics, University of California, Santa Barbara, Santa Barbara, California, United States, 2 Materials Department, University of California, Santa Barbara, Santa Barbara, California, United States

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5:30 PM - A7.10
The Role of La Surface Chemistry in the Passivation of Ge.

Dimitra Tsoutsou 1 , Georgia Mavrou 1 , Yerasimos Panagiotatos 1 , Sotiria Galata 1 , Andreas Sotiropoulos 1 , Athanasios Dimoulas 1
1 Institute of Materials Science, NCSR Demokritos, Aghia Paraskevi Attikis Greece

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5:45 PM - A7.11
Rare-earth Scandate High-k Films for Future Ge CMOS Technologies.

Joao Marcelo Lopes 1 2 , Eylem Durgun Oezben 1 2 , Alexander Nichau 1 2 , Martin Roeckerath 1 2 , Gregor Mussler 1 2 , Uwe Breuer 3 , Astrid Besmehn 3 , Juergen Schubert 1 2 , Siegfried Mantl 1 2
1 Institute for Bio- and Nanosystems (IBN1), Research Center Juelich, Juelich Germany, 2 JARA-Fundamentals of Future Information Technologies, JARA-FIT, Juelich Germany, 3 Central Division of Analytical Chemistry, Research Center Juelich, Juelich Germany

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2009-12-02   Show All Abstracts