Meetings & Events

MRS Fall 2009 Meeting Logo

2009 MRS Fall Meeting & Exhibit

November 30 - December 4, 2009 | Boston
Meeting Chairs
: Kristi Anseth, Li-Chyong Chen, Peter Gumbsch, Ji-Cheng Zhao

Symposium B : Reliability and Materials Issues of Semiconductor Optical and Electrical Devices

2009-11-30   Show All Abstracts

Symposium Organizers

Osamu Ueda Kanazawa Institute of Technology
Mitsuo Fukuda Toyohashi University of Technology
Steve Pearton University of Florida
Edwin Piner Nitronex Corporation
Paolo Montangero Avago Technologies Italy S.R.L.
B1: Laser Reliability
Session Chairs
Osamu Ueda
Monday AM, November 30, 2009
Liberty (Sheraton)

9:30 AM - **B1.1
Catastrophic Optical-damage in High-power, Broad-area Laser-diodes.

Aland Chin 1 , Rick Bertaska 2 , Martin Jaspan 3 , Allen Flusburg 3 , Stephen Swartz 3 , Maciej Knapczyk 3 , Israel Smilanski 3 , Jonah Jacob 3
1 , ALAND CHIN, LLC, Sharon, Massachusetts, United States, 2 , New England Analytical, LLC, Nashua, New Hampshire, United States, 3 , Science Research Laboratory, Inc., Somerville, Massachusetts, United States

Show Abstract

10:00 AM - **B1.2
Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs for Fiber Optical Communication.

Tatsuya Takeshita 1 , Hiromi Oohashi 1
1 Photonics Device Laboratory, NTT Corporation, Atsugi, Kanagawa Pref., Japan

Show Abstract

10:30 AM - **B1.3
Performance of InP/InAlGaAs Light Emitting Transistors Using Zn and C as Base Dopant.

Russell Dupuis 1 , Yong Huang 1 , Jae-Hyun Ryou 1 , Forest Dixon 2 , Nick Holonayk 2 , Milton Feng 2
1 School of ECE, Georgia Institute of Technology, Atlanta, Georgia, United States, 2 Department of ECE, University of Illinois at Urbana-Champaign, Champaign-Urbana, Illinois, United States

Show Abstract

11:00 AM -
BREAK

11:30 AM - **B1.4
InGaN Laser Diode Degradation. Surface and Bulk Processes.

Piotr Perlin 1 2 , Lucja Marona 1 , Tadek Suski 1 , Przemek Wisniewski 1 2 , Mike Leszczynski 1 2 , Pawel Prystawko 1 , Michal Bockowski 1 2 , Robert Czernecki 1 2 , Irina Makarowa 2 , Bogdan Kowalski 3
1 , Institute of high Pressure Physics, Warsaw Poland, 2 , TopGaN Ltd, Warsaw Poland, 3 , Institute of Physics, Warsaw Poland

Show Abstract

12:00 PM - **B1.5
Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes.

Shigetaka Tomiya 1 , Yuya Kanitani 1
1 Advanced Materials Laboratories, Sony Coporation, Atsugi, Kanagawa, Japan

Show Abstract

12:30 PM - B1.6
A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers.

Yongkun Sin 1 , Nathan Presser 1 , Neil Ives 1 , Steven Moss 1
1 Electronics and Photonics Laboratory, The Aerospace Corporation, El Segundo, California, United States

Show Abstract

12:45 PM - B1.7
Reliability of Semiconductor Structures with Buried Quantum Dots.

Vladimir Chaldyshev 1 , Nikolay Bert 1 , Anna Kolesnikova 2 , Vladimir Nenedomsky 1 , Valerii Preobrazhenskii 3 , Mikhail Putyato 3 , Alexei Romanov 1 , Boris Semyagin 3
1 , Ioffe Institute, St.Petersburg Russian Federation, 2 , Institute of Problems in Mechanical Engineering, St.Petersburg Russian Federation, 3 , Institute of Semiconductor Physics, Novosibirsk Russian Federation

Show Abstract

B2: Degradation Mechanisms
Session Chairs
Russell Dupuis
T Takeshita
Monday PM, November 30, 2009
Liberty (Sheraton)

2:30 PM - **B2.1
Recombination-enhanced Dislocation Glides--The Current Status of Knowledge.

Koji Maeda 1
1 Applied Physics, The University of Tokyo, Tokyo Japan

Show Abstract

3:00 PM - **B2.2
Mechanism of Defect Reactions in Semiconductors.

Yuzo Shinozuka 1
1 Faculty of Systems Engineering, Wakayama University, Wakayama Japan

Show Abstract

3:30 PM - B2.3
Bulk Catastrophic Optical-damage of 980nm, InxGa1-xAs/GaAs, High-power, Broad-area Laser-diodes Due to a Void in Au80Sn20 Solder.

Aland Chin 1 , Rick Bertaska 2 , Henry Eppich 3 , Martin Jaspan 3 , Jonah Jacob 3
1 , ALAND CHIN, LLC, Sharon, Massachusetts, United States, 2 , New England Analytical, LLC, Nashua, New Hampshire, United States, 3 , Science Research Laboratory, Inc., Somerville, Massachusetts, United States

Show Abstract

3:45 PM - B2.4
A Thermomechanical Approach to the Formation of Dark Defects in High Power Laser Diodes.

Alonso Martin 1 , Pilar Iniguez 2 , Juan Jimenez 1 , Myriam Oudart 3 , Julien Nagle 4
1 GdS Optron lab, Universidad de Valladolid, Valladolid Spain, 2 Física Teórica, Atómica y Óptica, Universidad de Valladolid, Valladolid Spain, 3 , Alcatel-Thales 3-5lab, Palaiseau France, 4 , Thales Research and Technology (TRT), Palaiseau France

Show Abstract

4:00 PM -
BREAK

B3: Optical Devices and Reliability
Session Chairs
Ed Piner
Shigetaka Tomiya
Monday PM, November 30, 2009
Liberty (Sheraton)

4:30 PM - B3.1
Gain Saturation of 785-nm Laser Signal Amplified in Si-rich SiOx Strip-loaded Waveguides on Quartz and Si.

Chung-Lun Wu 1 , Cheng-Wei Lian 1 , Gong-Ru Lin 1
1 Graduate Institute of Photonics and Optoelectronics, National Taiwan University , Taipei Taiwan

Show Abstract

4:45 PM - B3.2
Surface and Interface Effect of Durable and Efficient Polymer Solar Cells.

Dong Hwan Wang 1 , Jong Hyeok Park 2 , Sang Hyuk Im 3 , O Ok Park 1
1 Chemical & Biomolecular Engineering, KAIST, Daejeon, Daejeon, Korea (the Republic of), 2 Chemical Engineering, Sungkyunkwan University, Suwon, Suwon, Korea (the Republic of), 3 , KRICT, Daejeon, Daejeon, Korea (the Republic of)

Show Abstract

5:00 PM - B3.3
A MHz Modulable Si-based LED Afforded by Engineering Light-emitting Defects in Si.

Norishige Tana-ami 1 , Jun Igarashi 1 , Yosuke Terada 1 , Yuhsuke Yasutake 1 , Susumu Fukatsu 1
1 , University of Tokyo, Tokyo Japan

Show Abstract

5:15 PM - B3.4
Reliability and Performance of Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates.

James Grandusky 1 , Yongjie Cui 1 , Mark Mendrick 1 , Shawn Gibb 1 , Leo Schowalter 1
1 , Crystal IS, Green Island, New York, United States

Show Abstract

5:30 PM - B3.5
Modifications of Defects Concentration Induced by Ammonia Flow Rate and its Effects on Gallium Nitride Grown by MOCVD.

Suresh Sundaram 1 , Ganesh Vattikondala 1 , PremKumar Thirugnanam 1 , Balaji Manavaimaran 1 , Ganesan VedachalaIyer 2 , Baskar Krishnan 1
1 Crystal Growth Centre, Anna University, Chennai, Tamil Nadu, India, 2 , UGC-DAE Consortium for Scientific Reserach, Indore , Madhya Pradesh, India

Show Abstract

5:45 PM - B3.6
Large Batch Etching of Gallium Nitride Using Inductively Coupled Plasma Tools as a Production Solution.

Zhong Ren 1 , Mark Dineen 1 , Ligang Deng 1 , Andrew Goodyear 1 , Robert Gunn 1
1 , Oxford Instruments Plasma Technology, Bristol United Kingdom

Show Abstract

2009-12-01   Show All Abstracts

Symposium Organizers

Osamu Ueda Kanazawa Institute of Technology
Mitsuo Fukuda Toyohashi University of Technology
Steve Pearton University of Florida
Edwin Piner Nitronex Corporation
Paolo Montangero Avago Technologies Italy S.R.L.
B4: Electronic Device Reliability
Session Chairs
Koji Maeda
Yuzo Shinozuka
Tuesday AM, December 01, 2009
Liberty (Sheraton)

9:30 AM - **B4.1
Reliability of InP HBTs Under High Current Density Operation.

Yoshino Fukai 1
1 , NTT Photonics labs., Atugi Japan

Show Abstract

10:00 AM - B4.2
Predictive Model for the Relative Dislocation Sensitivity of GaAs and GaN.

Jeong Ho You 2 , Harley Johnson 1
2 , Caltech, Pasadena, California, United States, 1 , University of Illinois, Urbana, Illinois, United States

Show Abstract

10:15 AM - B4.3
Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric.

Daniel Lichtenwalner 1 , Veena Misra 2 , Sarit Dhar 3 , Sei-Hyung Ryu 3 , Anant Agarwal 3
1 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, United States, 3 Power R & D, CREE, Inc., Research Triangle Park, North Carolina, United States

Show Abstract

10:30 AM - **B4.4
GaN HEMT Reliability.

Kurt Smith 1
1 , Raytheon, Andover, Massachusetts, United States

Show Abstract

11:00 AM -
BREAK

B5 : Wide Bandgap Devices I
Session Chairs
Steve Pearton
Ed Piner
Tuesday AM, December 01, 2009
Liberty (Sheraton)

11:30 AM - **B5.1
Lifetime Assessment of Militarily Critical Electronics: An Evolving Role for Government Science and Technology

Christopher Bozada 1 , Donald Dorsey 2
1 , Air Force Research Laboratory Sensors Directorate, Wright-Patterson AFB, Ohio, United States, 2 , Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio, United States

Show Abstract

12:00 PM - **B5.2
The Analysis of Wide Band Gap Semiconductors Using Raman Spectroscopy.

Samuel Graham 1
1 Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

Show Abstract

12:30 PM - B5.3
A Comprehensive Approach to HEMT Reliability Testing.

David Cheney 1 , Brent Gila 2 , Erica Douglas 2 , Fan Ren 3 , Steve Pearton 2 1
1 Electrical & Computing Engineering, University of Florida, Gainesville, Florida, United States, 2 Material Science & Engineering, University of Florida, Gainesville, Florida, United States, 3 Chemical Engineering, University of Florida, Gainesville, Florida, United States

Show Abstract

12:45 PM - B5.4
GaAs and GaN HEMT Reliability and Degredation Mechanisms after Long Term Stress Testing.

Erica Douglas 1 , Dave Cheney 2 , Brent Gila 1 , Stephen Pearton 1 , Fan Ren 3 , Cammy Abernathy 1
1 Materials Science & Engineering, University of Florida, Gainesville, Florida, United States, 2 Electrical and Computer Engineering, University of Florida, Gainesville, Florida, United States, 3 Chemical Engineering, University of Florida, Gainesville, Florida, United States

Show Abstract

B6: Compound Semiconductors
Session Chairs
Yoshino Fukai
Kurt Smith
Tuesday PM, December 01, 2009
Liberty (Sheraton)

2:30 PM - B6.1
Medium Energy Ion Scattering Investigation of SiO2/4H-SiC Interface with Nitridation Anneal.

Xingguang Zhu 1 2 ,