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MRS Fall 2009 Meeting Logo

2009 MRS Fall Meeting & Exhibit

November 30 - December 4, 2009 | Boston
Meeting Chairs
: Kristi Anseth, Li-Chyong Chen, Peter Gumbsch, Ji-Cheng Zhao

Symposium B : Reliability and Materials Issues of Semiconductor Optical and Electrical Devices

2009-11-30   Show All Abstracts

Symposium Organizers

Osamu Ueda Kanazawa Institute of Technology
Mitsuo Fukuda Toyohashi University of Technology
Steve Pearton University of Florida
Edwin Piner Nitronex Corporation
Paolo Montangero Avago Technologies Italy S.R.L.
B1: Laser Reliability
Session Chairs
Osamu Ueda
Monday PM, November 30, 2009
Liberty (Sheraton)

9:30 AM - **B1.1
Catastrophic Optical-damage in High-power, Broad-area Laser-diodes.

Aland Chin 1 , Rick Bertaska 2 , Martin Jaspan 3 , Allen Flusburg 3 , Stephen Swartz 3 , Maciej Knapczyk 3 , Israel Smilanski 3 , Jonah Jacob 3
1 , ALAND CHIN, LLC, Sharon, Massachusetts, United States, 2 , New England Analytical, LLC, Nashua, New Hampshire, United States, 3 , Science Research Laboratory, Inc., Somerville, Massachusetts, United States

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10:00 AM - **B1.2
Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs for Fiber Optical Communication.

Tatsuya Takeshita 1 , Hiromi Oohashi 1
1 Photonics Device Laboratory, NTT Corporation, Atsugi, Kanagawa Pref., Japan

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10:30 AM - **B1.3
Performance of InP/InAlGaAs Light Emitting Transistors Using Zn and C as Base Dopant.

Russell Dupuis 1 , Yong Huang 1 , Jae-Hyun Ryou 1 , Forest Dixon 2 , Nick Holonayk 2 , Milton Feng 2
1 School of ECE, Georgia Institute of Technology, Atlanta, Georgia, United States, 2 Department of ECE, University of Illinois at Urbana-Champaign, Champaign-Urbana, Illinois, United States

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11:00 AM - B1
BREAK

11:30 AM - **B1.4
InGaN Laser Diode Degradation. Surface and Bulk Processes.

Piotr Perlin 1 2 , Lucja Marona 1 , Tadek Suski 1 , Przemek Wisniewski 1 2 , Mike Leszczynski 1 2 , Pawel Prystawko 1 , Michal Bockowski 1 2 , Robert Czernecki 1 2 , Irina Makarowa 2 , Bogdan Kowalski 3
1 , Institute of high Pressure Physics, Warsaw Poland, 2 , TopGaN Ltd, Warsaw Poland, 3 , Institute of Physics, Warsaw Poland

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12:00 PM - **B1.5
Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes.

Shigetaka Tomiya 1 , Yuya Kanitani 1
1 Advanced Materials Laboratories, Sony Coporation, Atsugi, Kanagawa, Japan

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12:30 PM - B1.6
A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers.

Yongkun Sin 1 , Nathan Presser 1 , Neil Ives 1 , Steven Moss 1
1 Electronics and Photonics Laboratory, The Aerospace Corporation, El Segundo, California, United States

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12:45 PM - B1.7
Reliability of Semiconductor Structures with Buried Quantum Dots.

Vladimir Chaldyshev 1 , Nikolay Bert 1 , Anna Kolesnikova 2 , Vladimir Nenedomsky 1 , Valerii Preobrazhenskii 3 , Mikhail Putyato 3 , Alexei Romanov 1 , Boris Semyagin 3
1 , Ioffe Institute, St.Petersburg Russian Federation, 2 , Institute of Problems in Mechanical Engineering, St.Petersburg Russian Federation, 3 , Institute of Semiconductor Physics, Novosibirsk Russian Federation

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B2: Degradation Mechanisms
Session Chairs
Russell Dupuis
T Takeshita
Monday PM, November 30, 2009
Liberty (Sheraton)

2:30 PM - **B2.1
Recombination-enhanced Dislocation Glides--The Current Status of Knowledge.

Koji Maeda 1
1 Applied Physics, The University of Tokyo, Tokyo Japan

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3:00 PM - **B2.2
Mechanism of Defect Reactions in Semiconductors.

Yuzo Shinozuka 1
1 Faculty of Systems Engineering, Wakayama University, Wakayama Japan

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3:30 PM - B2.3
Bulk Catastrophic Optical-damage of 980nm, InxGa1-xAs/GaAs, High-power, Broad-area Laser-diodes Due to a Void in Au80Sn20 Solder.

Aland Chin 1 , Rick Bertaska 2 , Henry Eppich 3 , Martin Jaspan 3 , Jonah Jacob 3
1 , ALAND CHIN, LLC, Sharon, Massachusetts, United States, 2 , New England Analytical, LLC, Nashua, New Hampshire, United States, 3 , Science Research Laboratory, Inc., Somerville, Massachusetts, United States

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3:45 PM - B2.4
A Thermomechanical Approach to the Formation of Dark Defects in High Power Laser Diodes.

Alonso Martin 1 , Pilar Iniguez 2 , Juan Jimenez 1 , Myriam Oudart 3 , Julien Nagle 4
1 GdS Optron lab, Universidad de Valladolid, Valladolid Spain, 2 Física Teórica, Atómica y Óptica, Universidad de Valladolid, Valladolid Spain, 3 , Alcatel-Thales 3-5lab, Palaiseau France, 4 , Thales Research and Technology (TRT), Palaiseau France

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4:00 PM - B2
BREAK

B3: Optical Devices and Reliability
Session Chairs
Ed Piner
Shigetaka Tomiya
Monday PM, November 30, 2009
Liberty (Sheraton)

4:30 PM - B3.1
Gain Saturation of 785-nm Laser Signal Amplified in Si-rich SiOx Strip-loaded Waveguides on Quartz and Si.

Chung-Lun Wu 1 , Cheng-Wei Lian 1 , Gong-Ru Lin 1
1 Graduate Institute of Photonics and Optoelectronics, National Taiwan University , Taipei Taiwan

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4:45 PM - B3.2
Surface and Interface Effect of Durable and Efficient Polymer Solar Cells.

Dong Hwan Wang 1 , Jong Hyeok Park 2 , Sang Hyuk Im 3 , O Ok Park 1
1 Chemical & Biomolecular Engineering, KAIST, Daejeon, Daejeon, Korea (the Republic of), 2 Chemical Engineering, Sungkyunkwan University, Suwon, Suwon, Korea (the Republic of), 3 , KRICT, Daejeon, Daejeon, Korea (the Republic of)

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5:00 PM - B3.3
A MHz Modulable Si-based LED Afforded by Engineering Light-emitting Defects in Si.

Norishige Tana-ami 1 , Jun Igarashi 1 , Yosuke Terada 1 , Yuhsuke Yasutake 1 , Susumu Fukatsu 1
1 , University of Tokyo, Tokyo Japan

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5:15 PM - B3.4
Reliability and Performance of Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates.

James Grandusky 1 , Yongjie Cui 1 , Mark Mendrick 1 , Shawn Gibb 1 , Leo Schowalter 1
1 , Crystal IS, Green Island, New York, United States

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5:30 PM - B3.5
Modifications of Defects Concentration Induced by Ammonia Flow Rate and its Effects on Gallium Nitride Grown by MOCVD.

Suresh Sundaram 1 , Ganesh Vattikondala 1 , PremKumar Thirugnanam 1 , Balaji Manavaimaran 1 , Ganesan VedachalaIyer 2 , Baskar Krishnan 1
1 Crystal Growth Centre, Anna University, Chennai, Tamil Nadu, India, 2 , UGC-DAE Consortium for Scientific Reserach, Indore , Madhya Pradesh, India

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5:45 PM - B3.6
Large Batch Etching of Gallium Nitride Using Inductively Coupled Plasma Tools as a Production Solution.

Zhong Ren 1 , Mark Dineen 1 , Ligang Deng 1 , Andrew Goodyear 1 , Robert Gunn 1
1 , Oxford Instruments Plasma Technology, Bristol United Kingdom

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2009-12-01   Show All Abstracts

Symposium Organizers

Osamu Ueda Kanazawa Institute of Technology
Mitsuo Fukuda Toyohashi University of Technology
Steve Pearton University of Florida
Edwin Piner Nitronex Corporation
Paolo Montangero Avago Technologies Italy S.R.L.
B4: Electronic Device Reliability
Session Chairs
Koji Maeda
Yuzo Shinozuka
Tuesday AM, December 01, 2009
Liberty (Sheraton)

9:30 AM - **B4.1
Reliability of InP HBTs Under High Current Density Operation.

Yoshino Fukai 1
1 , NTT Photonics labs., Atugi Japan

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10:00 AM - B4.2
Predictive Model for the Relative Dislocation Sensitivity of GaAs and GaN.

Jeong Ho You 2 , Harley Johnson 1
2 , Caltech, Pasadena, California, United States, 1 , University of Illinois, Urbana, Illinois, United States

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10:15 AM - B4.3
Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric.

Daniel Lichtenwalner 1 , Veena Misra 2 , Sarit Dhar 3 , Sei-Hyung Ryu 3 , Anant Agarwal 3
1 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, United States, 3 Power R & D, CREE, Inc., Research Triangle Park, North Carolina, United States

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10:30 AM - **B4.4
GaN HEMT Reliability.

Kurt Smith 1
1 , Raytheon, Andover, Massachusetts, United States

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11:00 AM - B4
BREAK

B5 : Wide Bandgap Devices I
Session Chairs
Steve Pearton
Ed Piner
Tuesday PM, December 01, 2009
Liberty (Sheraton)

11:30 AM - **B5.1
Lifetime Assessment of Militarily Critical Electronics: An Evolving Role for Government Science and Technology

Christopher Bozada 1 , Donald Dorsey 2
1 , Air Force Research Laboratory Sensors Directorate, Wright-Patterson AFB, Ohio, United States, 2 , Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio, United States

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12:00 PM - **B5.2
The Analysis of Wide Band Gap Semiconductors Using Raman Spectroscopy.

Samuel Graham 1
1 Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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12:30 PM - B5.3
A Comprehensive Approach to HEMT Reliability Testing.

David Cheney 1 , Brent Gila 2 , Erica Douglas 2 , Fan Ren 3 , Steve Pearton 2 1
1 Electrical & Computing Engineering, University of Florida, Gainesville, Florida, United States, 2 Material Science & Engineering, University of Florida, Gainesville, Florida, United States, 3 Chemical Engineering, University of Florida, Gainesville, Florida, United States

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12:45 PM - B5.4
GaAs and GaN HEMT Reliability and Degredation Mechanisms after Long Term Stress Testing.

Erica Douglas 1 , Dave Cheney 2 , Brent Gila 1 , Stephen Pearton 1 , Fan Ren 3 , Cammy Abernathy 1
1 Materials Science & Engineering, University of Florida, Gainesville, Florida, United States, 2 Electrical and Computer Engineering, University of Florida, Gainesville, Florida, United States, 3 Chemical Engineering, University of Florida, Gainesville, Florida, United States

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B6: Compound Semiconductors
Session Chairs
Yoshino Fukai
Kurt Smith
Tuesday PM, December 01, 2009
Liberty (Sheraton)

2:30 PM - B6.1
Medium Energy Ion Scattering Investigation of SiO2/4H-SiC Interface with Nitridation Anneal.

Xingguang Zhu 1 2 , Sarit Dhar 4 , Hang Dong Lee 1 , Tian Feng 1 , John Rozen 4 , Ayayi Ahyi 5 , John Williams 5 , Eric Garfunkel 3 , Torgny Gustafsson 1 , Leonard Feldman 2 4
1 Department of Physics and Astronomy, Rugters University, Piscataway, New Jersey, United States, 2 Institute for Advanced Materials and Devices, Rugters University, Piscataway, New Jersey, United States, 4 Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee, United States, 5 Department of Physics, Auburn University, Auburn, Alabama, United States, 3 Department of Chemistry, Rutgers University, Piscataway, New Jersey, United States

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2:45 PM - B6.2
Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-doped Base Layers.

Atsushi Koizumi 1 , Kazuki Oshitanai 1 , Kazuo Uchida 1 , Shinji Nozaki 1
1 Department of Electronic Engineering, The University of Electro-Communications, Chofu, Tokyo, Japan

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3:00 PM - **B6.3
Passivation Reliability for III-Nitride Semiconductor Devices.

Brent Gila 1 , A. Gerger 1 , A. Scheuermann 1 , D. Cheney 3 , E. Douglas 1 , C. Abernathy 1 , F. Ren 2 , S. Pearton 1
1 Materials Science and Engineering, University of Florida, Gainesville, Florida, United States, 3 Electrical and Computer Engineering, University of Florida, Gainesville, Florida, United States, 2 Chemical Engineering, University of Florida, Gainesville, Florida, United States

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3:30 PM - **B6.4
Reliability of GaN on Si FETs and MMICs.

Donald Gajewski 1 , Walter Nagy 1 , Allen Hanson 1 , Wayne Johnson 1 , Kevin Linthicum 1
1 , Nitronex Corporation, Durham, North Carolina, United States

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4:00 PM - B6
BREAK

B7: Characterization I
Session Chairs
Chris Bozada
Samuel Graham
Tuesday PM, December 01, 2009
Liberty (Sheraton)

4:30 PM - B7.1
Investigating of the PCMO Resistance Switching Devices by High Resolution Thermal Imaging Method.

Lau Hon Kit 1 , Chan Kwok-leung 2 , Leung Chi Wah 1
1 Applied Physics , The Hong Kong Polytechnic University, Hong Kong China, 2 Mechanical Engineering , The Hong Kong Polytechnic University, Hong Kong China

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4:45 PM - B7.2
Characterizing Strength of Thin Silicon Samples.

Stephan Schoenfelder 1 , Joerg Bagdahn 1
1 , Fraunhofer Center for Silicon Photovoltaics, Halle Germany

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5:00 PM - B7.3
The Effect of Passivation SiON Layer on the Data Retention Reliability of NAND Flash.

Younggeun Jang 1 , Kwangwook Lee 1 , Jungmyoung Shim 1 , Sangdeok Kim 1 , Junggeun Kim 1 , Sangwook Park 1 , Byungseok Lee 1 , Jinwoong Kim 1
1 Flash Process Development, Hynix Semiconductor Inc., Icheon-si Korea (the Republic of)

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5:15 PM - B7.4
Reliability in Mechatronics Systems from TEM, SEM and SE Material Analysis.

Pierre Dahoo 1 3 4 , Armelle Girard 1 2 , Nadim Alayli 2 3 4
1 Physics & Engineering Science, University of Versailles St Quentin en Yvelines, Versailles France, 3 Laboratoire ATmosphère Milieux Observations Spatiales , CNRS UMR 8190, BP3, 91371, Verrières-le-Buisson France, 4 LATMOS, Institut Pierre Simon Laplace-Université de Versailles-Saint-Quentin, Saint-Quentin en Yvelines France, 2 Laboratoire d'étude des Microstructures , CNRS-ONERA UMR, BP72, 92320 Chatillon cedex France

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5:30 PM - B7.5
Effects of Geometry, Mode Mixity, and Temperature on Dislocation Nucleation in Strained Electronics.

Tianlei Li 1 2 , Jinhaeng Lee 1 , Yanfei Gao 1
1 Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee, United States, 2 Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States

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B8: Poster Session
Session Chairs
Brent Gila
Wayne Johnson
Wednesday AM, December 02, 2009
Exhibit Hall D (Hynes)

9:00 PM - B8.1
Low-resistance Ti/Au Metal Contacts to n-Type Amorphous Gallium Indium Zinc Oxides.

Hyunsoo Kim 1 , Kyoung-Kook Kim 2
1 School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeouju Korea (the Republic of), 2 Dept of Nano-Optics, Korea Polytechnic University, Siheung Korea (the Republic of)

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9:00 PM - B8.10
Electrically Stable InGaZnO4 Thin Film Transistors using Sputter-deposited PMMA Gate Dielectric and Passivation Layers.

Dong Hun Kim 1 , Nam Gyu Cho 1 , Ho Gi Kim 1 , Ill-Doo Kim 2
1 Department of Materials Science and Engineering, KAIST, Daejeon Korea (the Republic of), 2 , KIST, Seoul Korea (the Republic of)

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9:00 PM - B8.11
Density-Functional Analysis on Vacancy Orbital and its Elastic Response of Silicon.

Takafumi Ogawa 1 , Kenji Tsuruta 2 , Hiroshi Iyetomi 1 , Hiroshi Kaneta 1 , Terutaka Goto 1
1 Graduate school of science and technology, Niigata University, Niigata, Niigata, Japan, 2 Graduate school of natural science and technology, Okayama University, Okayama, Okayama, Japan

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9:00 PM - B8.12
Comparative Study of Inductively Coupled Plasma Induced Damage in MOCVD GaN on GaN and Sapphire Substrates.

Yutaka Tokuda 1 , Kazuki Akiyama 1 , Yujiro Yamada 1 , Hiroyuki Ueda 2 , Osamu Ishiguro 2 , Narumasa Soejima 2 , Tetsu Kachi 2
1 Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Toyota Japan, 2 , Toyota Central R&D Inc., Aichi Japan

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9:00 PM - B8.13
Effect of W Doping Composition Ratio on the Optical Properties of VO2 Thin Films.

Hyun Koo 1 , Il Hwan Yoo 1 , Sung-Hwan Bae 1 , Dong Min Shin 1 , Chan Park 1 2
1 Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 Research Institue of Advanced Materials, Seoul National University, Seoul Korea (the Republic of)

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9:00 PM - B8.14
Photocapacitance Transient Study of Silicon Doped GaN.

Mo Ahoujja 1
1 Physics, University of Dayton, Dayton, Ohio, United States

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9:00 PM - B8.15
Anomalous X-ray Reflectivity Study of InGaN/GaN Multi-quantum Well Structure.

Do Young Noh 1 , Sung Pyo Lee 1
1 , Gwangju Institute of Science and Technology, Gwangju Korea (the Republic of)

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9:00 PM - B8.16
Electrical Characterization of Crossed Electrospun Tin Oxide Nanoribbons in a Field Effect Transistor Configuration.

Jaime Rodriguez 1 , Nicholas Pinto 1
1 Physics, University of Puerto Rico at Humacao, Guaynabo, Puerto Rico, United States

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9:00 PM - B8.17
Effects of Sulfur Treatment on N-polar InN Surfaces.

Yuh-Hwa Chang 1 , Yen-Sheng Lu 2 , J. Yeh 1 , Yu-Liang Hong 3 , Cheng-Tai Kuo 3 , Shangjr Gwo 3
1 , Institute of NanoEngineering and MicroSystems,National Tsing Hua University, Hsinchu Taiwan, 2 , Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu Taiwan, 3 , Department of Physics, National Tsing-Hua University, Hsinchu Taiwan

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9:00 PM - B8.18
Effect of Oxygen Content in Mo Diffusion Barrier on the Reliability of Cu Interconnector.

Gil Ho Gu 1 , Chan Gyung Park 1 2
1 Materials Science and Engineerging, POSTECH, Pohang, Gyungbuk, Korea (the Republic of), 2 National Center for Nanomaterials and Technology, POSTECH, Pohang, Gyungbuk, Korea (the Republic of)

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9:00 PM - B8.19
The Effect of Surface Morphology and Coating Thickness of Ta2O5-IrO2 Electrode for Electrolysis.

Jung Dae Kim 1 2 , Dongcheol Yoon 2 , Heesoo Lee 2 , Youngmin Oh 3 , Kyu Hwan Lee 4 , Min-Seok Jeon 5
1 , Gyeongnam Regional Small & Medium Business Administration, Changwon, Gyeongnam Korea (the Republic of), 2 School of Materials Science & Engineering, Pusan National University, Busan Korea (the Republic of), 3 , Danam ENE Digital Technology Innovation Center , Busan Korea (the Republic of), 4 , Korea Institute of Materials Science, Changwon Korea (the Republic of), 5 Machinery & Material Testing Center, Korea Testing Laboratory , Seoul Korea (the Republic of)

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9:00 PM - B8.2
Reliability of High-Temperature Operation for GaN-Based OPAMP.

Kazuki Nomoto 1 , Kazuya Hasegawa 1 , Masataka Satoh 1 , Tohru Nakamura 1
1 Research Center for Micro-Nano Technology, HOSEI University, Koganei Japan

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9:00 PM - B8.21
Selective Electrochemical Etching of GaN Having More Than Two n-GaN Layers.

Baro Lee 1 , Joonmo Park 1 , Kwang Min Song 1 , Sang-Wan Ryu 1
1 Physics, Chonnam National University, Gwangju Korea (the Republic of)

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9:00 PM - B8.22
Fabrication of Thin Film Ti-Si-C for Reliable Metallization to Power AlInN/GaN HEMTs.

Michal Borysiewicz 1 , Marie-Antoinette di Forte-Poisson 2 , Marek Ekielski 1 , Eliana Kaminska 1 , Anna Piotrowska 1 , Rafal Jakiela 3 , Elzbieta Dynowska 3 , Tomasz Wojciechowski 3
1 , Institute of Electron Technology, Warsaw Poland, 2 , Alcatel-Thales III-V Lab, Marcoussis France, 3 , Institute of Physics, PAS, Warsaw Poland

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9:00 PM - B8.23
Microstructure Study of the Oxidation of TiN Layers During Sputtering Process.

Chun Wang 1
1 Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States

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9:00 PM - B8.24
Temperature Dependent Optical Band Gap Measurements of III-V Films by Low Temperature Photoluminescence Spectroscopy.

Linda Casson 1 , Francis Ndi 1 , Eric Teboul 1
1 , HORIBA Scientific, Edison, New Jersey, United States

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9:00 PM - B8.25
Time-resolved PL and EL Measurements of PV Materials using a Modular TCSPC System.

Linda Casson 1 , Arnaud Vigier 1 , Salvatore Atzeni 1
1 , HORIBA Scientific, Edison, New Jersey, United States

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9:00 PM - B8.26
Transparent, Flexible Composite Barrier Films from Solution.

Jeffrey Gerbec 1 3 , Jimmy Granstrom 3 4 , Hunaid Nulwala 2 3 , Motoko Furukawa 1 , Luis Campos 2 3 , Craig Hawker 2
1 , MC Research and Innovation Center, Goleta, California, United States, 3 Mitsubishi Chemical Center for Advanced Materials, University of California, Santa Barbara, California, United States, 4 Center for Polymers and Organic Solids, University of California, Santa Barbara, California, United States, 2 Materials Research Laboratory, University of California, Santa Barbara, California, United States

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9:00 PM - B8.27
Dependency of Indium Concentration on Structural Defects in MOVPE-grown InGaN/GaN Heterostructures.

J. Dudding 1 , D. Korakakis 1 2
1 Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia, United States, 2 , National Energy Technology Laboratory, Morgantown, West Virginia, United States

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9:00 PM - B8.28
Cyclic Failure Mechanism of Gold Thin Film on Polydimethylsiloxane (PDMS).

Onobu Akogwu 1 2 , David Kwabi 2 , Winston Soboyejo 2
1 Electrical Engineering, Princeton University, Princeton , New Jersey, United States, 2 Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey, United States

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9:00 PM - B8.29
Thermo-mechanical Property of Porous low-k Material.

Suk Hoon Kang 1 , Tae Jun Ko 1 , Kyu Hwan Oh 1 , Woong Ho Bang 2 , Liangshan Chen 2 , Choong-Un Kim 2
1 , Seoul National University, Seoul Korea (the Republic of), 2 , University of Texas at Arlingtion, Arlingtion, Texas, United States

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9:00 PM - B8.3
High Current Gain Triple Ion Implanted 4H-SiC BJT.

Taku Tajima 1 , Tadashi Nakamura 1 , Yuki Watabe 1 , Masataka Satho 1 , Tohru Nakamura 1
1 , Hosei Univ., Koganei-Shi, Tokyo Japan

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9:00 PM - B8.32
Tuning Work Functions of Mo and Cu Films with O2 Annealing Processes using Furnace and RTP.

Dong-Jin Yun 1 , Jung-Min Kim 1 , Shi-Woo Rhee 1
1 chemical enginnering, POSTECH, Pohang, kyungbuk, Korea (the Republic of)

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9:00 PM - B8.33
Optimization of Interpoly Dielectric Using Plasma Nitridation for Future Non-volatile Memory.

Ching Yuan Ho 1 , Jr Hau He 1
1 , Photonics and Optoelectronisc of National Taiwan University, Taipei Taiwan

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9:00 PM - B8.4
Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor.

Yuki Watabe 1 , Taku Tajima 1 , Tohru Nakamura 1
1 , Hosei University, Tokyo Japan

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9:00 PM - B8.6
Reliability Study of GaN-based LEDs with Different Growth Conditions for the Multiple Quantum Wells.

Leung Ka Kuen 1 , Fong Patrick W. K. 1 , Surya Charles 1
1 EIE, The Hong Kong Polytechnic University, Hong Kong China

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9:00 PM - B8.7
Novel Procedure Method to Improve of White Light Emitting Diode Uniformity.

Chi-Feng Chang 1 , Chun-Liang Lin 2 3 , Wan-Zhen Li 4 , Hsin-Hua Ho 4
1 Electro Optical Engineering, Kun Shan University, Tainan County Taiwan, 2 Electronic Engineering, Kun-Shan University, Tainan County Taiwan, 3 Nanotechnology R&D Center, Kun-Shan University, Tainan County Taiwan, 4 , Chi Mei LIghting Technology Corp, Tainan County Taiwan

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9:00 PM - B8.8
Ge/Si(100) Photodetector Based on High-quality Epitaxial Germanium Deposited by RPCVD.

Sang Hoon Kim 1 , Dongwoo Suh 2 , Jiho Joo 2 , Gyungock Kim 2
1 , Thin Film Solae Cell Technology Team, Electronics and Telecommunications Research Institute, Daejeon Korea (the Republic of), 2 , Nano New Technology Research Team, Electronics and Telecommunications Research Institute, Daejeon Korea (the Republic of)

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9:00 PM - B8.9
Measurement of the Stress Distribution in Depth for Cu/Ta Double Layers using a GIXS Method.

Shinji Takayama 1 , Yasuhiro Asahi 1
1 Electrical and Electronics Engineering, Hosei University, Tokyo Japan

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2009-12-02   Show All Abstracts

Symposium Organizers

Osamu Ueda Kanazawa Institute of Technology
Mitsuo Fukuda Toyohashi University of Technology
Steve Pearton University of Florida
Edwin Piner Nitronex Corporation
Paolo Montangero Avago Technologies Italy S.R.L.
B9: Characterization Methods
Session Chairs
Osamu Ueda
Wednesday AM, December 02, 2009
Liberty (Sheraton)

9:30 AM - **B9.1
Observation of Dopant Profile of Transistors Using Scanning Nonlinear Dielectric Microscopy.

Koichiro Honda 1 , Yasuo Cho 2
1 , Fujitsu Laboratories Ltd., Atsugi Japan, 2 , Tohoku University, Sendai Japan

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10:00 AM - B9.2
Sub Surface Material Characterization using High Frequency Eddy Current Spectroscopy.

Henning Heuer 1 , Susanne Hillmann 1 , Mike Roellig 1
1 Institute for non destructive testing, Fraunhofer IZFP Dresden, Dresden Germany

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10:15 AM - B9.3
Prevention of Si Wafer Breakage Via Non-destructive Evaluation of Plasma Arc Induced Damage.

Jennifer Stopford 1 , Ken Horan 1 , David Allen 1 , Andreas Danilewsky 3 , Muhammad Morshed 2 , Patrick McNally 1
1 Nanomaterials Processing Laboratory, Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, DCU, Dublin Ireland, 3 , Kristallographisches Institut, -Herder-Strasse 5, 79104 Freiburg i. Br Germany, 2 National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 Ireland

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10:30 AM - B9.4
Minority Carrier Lifetime Measurement Based on Low Frequency Fluctuation.

Lin Ke 1 , Sha Huang 2 , Soo Jin Chua 1 , Szu Cheng Lai 1 , Bin Dolmanan Surani 1
1 , IMRE, Singapore Singapore, 2 , National Univerisity of Singapore, Singapore Singapore

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10:45 AM - B9.5
Mobility Variation in Electron Irradiated Gated and Ungated AlGaN/GaN High Electron Mobility Transistors.

Helen Jackson 1 2 3
1 Sensors, Air Force, BeaverCreek, Ohio, United States, 2 Physics , Wright State University, Dayton, Ohio, United States, 3 Semiconductor Research Center, Wright State University, Dayton, Ohio, United States

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11:00 AM - B9
BREAK

B10: Strain Effects
Session Chairs
Koichiro Honda
Steve Pearton
Wednesday PM, December 02, 2009
Liberty (Sheraton)

11:30 AM - B10.1
Surfactant Effects of Indium on the Growth of AlN/GaN Distributed Bragg Reflectors via Metal Organic Vapor Phase Epitaxy.

L. Rodak 1 , C. Miller 1 , D. Korakakis 1 2
1 Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia, United States, 2 , National Energy Technology Laboratory, Morgantown, West Virginia, United States

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11:45 AM - B10.2
Stress Limited Silicide Formation in Constrained Nano-dimensions.

Ahmet Ozcan 1 , Christian Lavoie 2 , Stefan Zollner 1 , Anthony Domenicucci 1 , Asa Frye 1 , Conal Murray 2 , Dong-ick Lee 1 , Valli Arunachalam 3 , Bin Yang 4 , Patrick Press 5 , Sadanand Deshpande 1
1 Microelectronics, IBM, Hopewell Junction, New York, United States, 2 Research, IBM, Yorktown Heights, New York, United States, 3 , GLOBALFOUNDRIES, Hopewell Junction, New York, United States, 4 , GLOBALFOUNDRIES, Yorktown Heights, New York, United States, 5 , GLOBALFOUNDRIES, Dresden Germany

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12:00 PM - B10.3
Resistive Switching Characteristics in Pt Nanoparticles-included TiO2 Films.

Yu-Lung Chung 1 , Jen-Sue Chen 1
1 Department of Materials Science and Engineering, National Cheng Kung University, Tainan Taiwan

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12:15 PM - B10.4
Stress-Induced Void Formation in Cu Interconnects Investigated by In-Situ TEM and D-STEM.

K. Ganesh 1 , P. Ferreira 1 2
1 Materials Science and Engineering, University of Texas at Austin, Austin, Texas, United States, 2 Mechanical Engineering, University of Texas at Austin, Austin, Texas, United States

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12:30 PM - B10.5
Enhanced Adhesion Strength of Cu/TaN Interface by Alloying Cu.

Junya Inoue 1 , Shuichiro Ikemoto 1 , Shoichi Nambu 1 , Toshihiko Koseki 1
1 Department of Materials Engineering, The University of Tokyo, Tokyo Japan

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12:45 PM - B10.6
Ultra-thin Ni-based Silicides Formed from Metal-Si Intermixed Layer.

Zhen Zhang 1 , Yu Zhu 1 , Steve Rossnagel 1 , Bin Yang 2 , Simon Gaudet 3 , Andrew Kellock 4 , Ahmet Ozcan 5 , Conal Murray 1 , Patrick Desjardins 3 , Jean Jordan-Sweet 1 , Christian Lavoie 1
1 T. J. Watson research center, IBM , Yorktown Heights, New York, United States, 2 T.J. Watson Research Center, GLOBALFOUNDRIES, Yorktown Heights, New York, United States, 3 , Ecole Polytechnique de Montréal, Montréal, Quebec, Canada, 4 Almaden Research Center, IBM , San Jose, California, United States, 5 Microelectronics, IBM , Hopewell Junction, New York, United States

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B11: Defects/Growth
Session Chairs
Steve Pearton
Ed Piner
Wednesday PM, December 02, 2009
Liberty (Sheraton)

2:30 PM - B11.1
InGaAs/GaAsSb Heterostructures: Aluminum-Free Intersubband Devices.

Michele Nobile 1 , Aaron Andrews 1 , Hermann Detz 1 , Elvis Mujagic 1 , Pavel Klang 1 , Werner Schrenk 1 , Gottfried Strasser 1 2
1 Solid State Electronics, TU Wien, Vienna Austria, 2 EE and Physics, University at Buffalo, Buffalo, New York, United States

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2:45 PM - B11.2
Distribution of Hydrogen- and Vacancy-related Donor and Acceptor States in Helium Implanted and Plasma Hydrogenated Float Zone Silicon.

Reinhart Job 1 , Franz-Josef Niedernostheide 2 , Hans-Joachim Schulze 2 , Holger Schulze 3
1 Mathematics and Computer Science, University of Hagen, Hagen Germany, 2 , Infineon Technologies AG, Munich Germany, 3 , Infineon Technologies Austria AG, Villach Austria

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3:00 PM - B11.3
Microstructure and Properties of p-type SnO Thin Films.

Wei Guo 1 , Li Fu 1 , Yi Zhang 1 , Kui Zhang 1 , Zhimin Liu 2 , Hongtao Cao 2 , Xiaoqing Pan 1
1 Material Science and Engineering, University of Michigan-Ann Arbor, Ann Arbor, Michigan, United States, 2 Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering – Chinese Academic of Science, Ningbo, Zhejiang, China

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