Meetings & Events

MRS Fall 2009 Meeting Logo

2009 MRS Fall Meeting & Exhibit

November 30 - December 4, 2009 | Boston
Meeting Chairs
: Kristi Anseth, Li-Chyong Chen, Peter Gumbsch, Ji-Cheng Zhao

Symposium B : Reliability and Materials Issues of Semiconductor Optical and Electrical Devices

2009-11-30   Show All Abstracts

Symposium Organizers

Osamu Ueda Kanazawa Institute of Technology
Mitsuo Fukuda Toyohashi University of Technology
Steve Pearton University of Florida
Edwin Piner Nitronex Corporation
Paolo Montangero Avago Technologies Italy S.R.L.
B1: Laser Reliability
Session Chairs
Osamu Ueda
Monday AM, November 30, 2009
Liberty (Sheraton)

9:30 AM - **B1.1
Catastrophic Optical-damage in High-power, Broad-area Laser-diodes.

Aland Chin 1 , Rick Bertaska 2 , Martin Jaspan 3 , Allen Flusburg 3 , Stephen Swartz 3 , Maciej Knapczyk 3 , Israel Smilanski 3 , Jonah Jacob 3
1 , ALAND CHIN, LLC, Sharon, Massachusetts, United States, 2 , New England Analytical, LLC, Nashua, New Hampshire, United States, 3 , Science Research Laboratory, Inc., Somerville, Massachusetts, United States

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10:00 AM - **B1.2
Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs for Fiber Optical Communication.

Tatsuya Takeshita 1 , Hiromi Oohashi 1
1 Photonics Device Laboratory, NTT Corporation, Atsugi, Kanagawa Pref., Japan

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10:30 AM - **B1.3
Performance of InP/InAlGaAs Light Emitting Transistors Using Zn and C as Base Dopant.

Russell Dupuis 1 , Yong Huang 1 , Jae-Hyun Ryou 1 , Forest Dixon 2 , Nick Holonayk 2 , Milton Feng 2
1 School of ECE, Georgia Institute of Technology, Atlanta, Georgia, United States, 2 Department of ECE, University of Illinois at Urbana-Champaign, Champaign-Urbana, Illinois, United States

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11:00 AM -
BREAK

11:30 AM - **B1.4
InGaN Laser Diode Degradation. Surface and Bulk Processes.

Piotr Perlin 1 2 , Lucja Marona 1 , Tadek Suski 1 , Przemek Wisniewski 1 2 , Mike Leszczynski 1 2 , Pawel Prystawko 1 , Michal Bockowski 1 2 , Robert Czernecki 1 2 , Irina Makarowa 2 , Bogdan Kowalski 3
1 , Institute of high Pressure Physics, Warsaw Poland, 2 , TopGaN Ltd, Warsaw Poland, 3 , Institute of Physics, Warsaw Poland

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12:00 PM - **B1.5
Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes.

Shigetaka Tomiya 1 , Yuya Kanitani 1
1 Advanced Materials Laboratories, Sony Coporation, Atsugi, Kanagawa, Japan

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12:30 PM - B1.6
A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers.

Yongkun Sin 1 , Nathan Presser 1 , Neil Ives 1 , Steven Moss 1
1 Electronics and Photonics Laboratory, The Aerospace Corporation, El Segundo, California, United States

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12:45 PM - B1.7
Reliability of Semiconductor Structures with Buried Quantum Dots.

Vladimir Chaldyshev 1 , Nikolay Bert 1 , Anna Kolesnikova 2 , Vladimir Nenedomsky 1 , Valerii Preobrazhenskii 3 , Mikhail Putyato 3 , Alexei Romanov 1 , Boris Semyagin 3
1 , Ioffe Institute, St.Petersburg Russian Federation, 2 , Institute of Problems in Mechanical Engineering, St.Petersburg Russian Federation, 3 , Institute of Semiconductor Physics, Novosibirsk Russian Federation

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B2: Degradation Mechanisms
Session Chairs
Russell Dupuis
T Takeshita
Monday PM, November 30, 2009
Liberty (Sheraton)

2:30 PM - **B2.1
Recombination-enhanced Dislocation Glides--The Current Status of Knowledge.

Koji Maeda 1
1 Applied Physics, The University of Tokyo, Tokyo Japan

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3:00 PM - **B2.2
Mechanism of Defect Reactions in Semiconductors.

Yuzo Shinozuka 1
1 Faculty of Systems Engineering, Wakayama University, Wakayama Japan

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3:30 PM - B2.3
Bulk Catastrophic Optical-damage of 980nm, InxGa1-xAs/GaAs, High-power, Broad-area Laser-diodes Due to a Void in Au80Sn20 Solder.

Aland Chin 1 , Rick Bertaska 2 , Henry Eppich 3 , Martin Jaspan 3 , Jonah Jacob 3
1 , ALAND CHIN, LLC, Sharon, Massachusetts, United States, 2 , New England Analytical, LLC, Nashua, New Hampshire, United States, 3 , Science Research Laboratory, Inc., Somerville, Massachusetts, United States

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3:45 PM - B2.4
A Thermomechanical Approach to the Formation of Dark Defects in High Power Laser Diodes.

Alonso Martin 1 , Pilar Iniguez 2 , Juan Jimenez 1 , Myriam Oudart 3 , Julien Nagle 4
1 GdS Optron lab, Universidad de Valladolid, Valladolid Spain, 2 Física Teórica, Atómica y Óptica, Universidad de Valladolid, Valladolid Spain, 3 , Alcatel-Thales 3-5lab, Palaiseau France, 4 , Thales Research and Technology (TRT), Palaiseau France

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4:00 PM -
BREAK

B3: Optical Devices and Reliability
Session Chairs
Ed Piner
Shigetaka Tomiya
Monday PM, November 30, 2009
Liberty (Sheraton)

4:30 PM - B3.1
Gain Saturation of 785-nm Laser Signal Amplified in Si-rich SiOx Strip-loaded Waveguides on Quartz and Si.

Chung-Lun Wu 1 , Cheng-Wei Lian 1 , Gong-Ru Lin 1
1 Graduate Institute of Photonics and Optoelectronics, National Taiwan University , Taipei Taiwan

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4:45 PM - B3.2
Surface and Interface Effect of Durable and Efficient Polymer Solar Cells.

Dong Hwan Wang 1 , Jong Hyeok Park 2 , Sang Hyuk Im 3 , O Ok Park 1
1 Chemical & Biomolecular Engineering, KAIST, Daejeon, Daejeon, Korea (the Republic of), 2 Chemical Engineering, Sungkyunkwan University, Suwon, Suwon, Korea (the Republic of), 3 , KRICT, Daejeon, Daejeon, Korea (the Republic of)

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5:00 PM - B3.3
A MHz Modulable Si-based LED Afforded by Engineering Light-emitting Defects in Si.

Norishige Tana-ami 1 , Jun Igarashi 1 , Yosuke Terada 1 , Yuhsuke Yasutake 1 , Susumu Fukatsu 1
1 , University of Tokyo, Tokyo Japan

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5:15 PM - B3.4
Reliability and Performance of Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates.

James Grandusky 1 , Yongjie Cui 1 , Mark Mendrick 1 , Shawn Gibb 1 , Leo Schowalter 1
1 , Crystal IS, Green Island, New York, United States

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5:30 PM - B3.5
Modifications of Defects Concentration Induced by Ammonia Flow Rate and its Effects on Gallium Nitride Grown by MOCVD.

Suresh Sundaram 1 , Ganesh Vattikondala 1 , PremKumar Thirugnanam 1 , Balaji Manavaimaran 1 , Ganesan VedachalaIyer 2 , Baskar Krishnan 1
1 Crystal Growth Centre, Anna University, Chennai, Tamil Nadu, India, 2 , UGC-DAE Consortium for Scientific Reserach, Indore , Madhya Pradesh, India

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5:45 PM - B3.6
Large Batch Etching of Gallium Nitride Using Inductively Coupled Plasma Tools as a Production Solution.

Zhong Ren 1 , Mark Dineen 1 , Ligang Deng 1 , Andrew Goodyear 1 , Robert Gunn 1
1 , Oxford Instruments Plasma Technology, Bristol United Kingdom

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2009-12-01   Show All Abstracts

Symposium Organizers

Osamu Ueda Kanazawa Institute of Technology
Mitsuo Fukuda Toyohashi University of Technology
Steve Pearton University of Florida
Edwin Piner Nitronex Corporation
Paolo Montangero Avago Technologies Italy S.R.L.
B4: Electronic Device Reliability
Session Chairs
Koji Maeda
Yuzo Shinozuka
Tuesday AM, December 01, 2009
Liberty (Sheraton)

9:30 AM - **B4.1
Reliability of InP HBTs Under High Current Density Operation.

Yoshino Fukai 1
1 , NTT Photonics labs., Atugi Japan

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10:00 AM - B4.2
Predictive Model for the Relative Dislocation Sensitivity of GaAs and GaN.

Jeong Ho You 2 , Harley Johnson 1
2 , Caltech, Pasadena, California, United States, 1 , University of Illinois, Urbana, Illinois, United States

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10:15 AM - B4.3
Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric.

Daniel Lichtenwalner 1 , Veena Misra 2 , Sarit Dhar 3 , Sei-Hyung Ryu 3 , Anant Agarwal 3
1 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, United States, 3 Power R & D, CREE, Inc., Research Triangle Park, North Carolina, United States

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10:30 AM - **B4.4
GaN HEMT Reliability.

Kurt Smith 1
1 , Raytheon, Andover, Massachusetts, United States

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11:00 AM -
BREAK

B5 : Wide Bandgap Devices I
Session Chairs
Steve Pearton
Ed Piner
Tuesday AM, December 01, 2009
Liberty (Sheraton)

11:30 AM - **B5.1
Lifetime Assessment of Militarily Critical Electronics: An Evolving Role for Government Science and Technology

Christopher Bozada 1 , Donald Dorsey 2
1 , Air Force Research Laboratory Sensors Directorate, Wright-Patterson AFB, Ohio, United States, 2 , Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio, United States

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12:00 PM - **B5.2
The Analysis of Wide Band Gap Semiconductors Using Raman Spectroscopy.

Samuel Graham 1
1 Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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12:30 PM - B5.3
A Comprehensive Approach to HEMT Reliability Testing.

David Cheney 1 , Brent Gila 2 , Erica Douglas 2 , Fan Ren 3 , Steve Pearton 2 1
1 Electrical & Computing Engineering, University of Florida, Gainesville, Florida, United States, 2 Material Science & Engineering, University of Florida, Gainesville, Florida, United States, 3 Chemical Engineering, University of Florida, Gainesville, Florida, United States

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12:45 PM - B5.4
GaAs and GaN HEMT Reliability and Degredation Mechanisms after Long Term Stress Testing.

Erica Douglas 1 , Dave Cheney 2 , Brent Gila 1 , Stephen Pearton 1 , Fan Ren 3 , Cammy Abernathy 1
1 Materials Science & Engineering, University of Florida, Gainesville, Florida, United States, 2 Electrical and Computer Engineering, University of Florida, Gainesville, Florida, United States, 3 Chemical Engineering, University of Florida, Gainesville, Florida, United States

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B6: Compound Semiconductors
Session Chairs
Yoshino Fukai
Kurt Smith
Tuesday PM, December 01, 2009
Liberty (Sheraton)

2:30 PM - B6.1
Medium Energy Ion Scattering Investigation of SiO2/4H-SiC Interface with Nitridation Anneal.

Xingguang Zhu 1 2 , Sarit Dhar 4 , Hang Dong Lee 1 , Tian Feng 1 , John Rozen 4 , Ayayi Ahyi 5 , John Williams 5 , Eric Garfunkel 3 , Torgny Gustafsson 1 , Leonard Feldman 2 4
1 Department of Physics and Astronomy, Rugters University, Piscataway, New Jersey, United States, 2 Institute for Advanced Materials and Devices, Rugters University, Piscataway, New Jersey, United States, 4 Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee, United States, 5 Department of Physics, Auburn University, Auburn, Alabama, United States, 3 Department of Chemistry, Rutgers University, Piscataway, New Jersey, United States

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2:45 PM - B6.2
Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-doped Base Layers.

Atsushi Koizumi 1 , Kazuki Oshitanai 1 , Kazuo Uchida 1 , Shinji Nozaki 1
1 Department of Electronic Engineering, The University of Electro-Communications, Chofu, Tokyo, Japan

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3:00 PM - **B6.3
Passivation Reliability for III-Nitride Semiconductor Devices.

Brent Gila 1 , A. Gerger 1 , A. Scheuermann 1 , D. Cheney 3 , E. Douglas 1 , C. Abernathy 1 , F. Ren 2 , S. Pearton 1
1 Materials Science and Engineering, University of Florida, Gainesville, Florida, United States, 3 Electrical and Computer Engineering, University of Florida, Gainesville, Florida, United States, 2 Chemical Engineering, University of Florida, Gainesville, Florida, United States

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3:30 PM - **B6.4
Reliability of GaN on Si FETs and MMICs.

Donald Gajewski 1 , Walter Nagy 1 , Allen Hanson 1 , Wayne Johnson 1 , Kevin Linthicum 1
1 , Nitronex Corporation, Durham, North Carolina, United States

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4:00 PM -
BREAK

B7: Characterization I
Session Chairs
Chris Bozada
Samuel Graham
Tuesday PM, December 01, 2009
Liberty (Sheraton)

4:30 PM - B7.1
Investigating of the PCMO Resistance Switching Devices by High Resolution Thermal Imaging Method.

Lau Hon Kit 1 , Chan Kwok-leung 2 , Leung Chi Wah 1
1 Applied Physics , The Hong Kong Polytechnic University, Hong Kong China, 2 Mechanical Engineering , The Hong Kong Polytechnic University, Hong Kong China

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4:45 PM - B7.2
Characterizing Strength of Thin Silicon Samples.

Stephan Schoenfelder 1 , Joerg Bagdahn 1
1 , Fraunhofer Center for Silicon Photovoltaics, Halle Germany

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5:00 PM - B7.3
The Effect of Passivation SiON Layer on the Data Retention Reliability of NAND Flash.

Younggeun Jang 1 , Kwangwook Lee 1 , Jungmyoung Shim 1 , Sangdeok Kim 1 , Junggeun Kim 1 , Sangwook Park 1 , Byungseok Lee 1 , Jinwoong Kim 1
1 Flash Process Development, Hynix Semiconductor Inc., Icheon-si Korea (the Republic of)

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5:15 PM - B7.4
Reliability in Mechatronics Systems from TEM, SEM and SE Material Analysis.

Pierre Dahoo 1 3 4 , Armelle Girard 1 2 , Nadim Alayli 2 3 4
1 Physics & Engineering Science, University of Versailles St Quentin en Yvelines, Versailles France, 3 Laboratoire ATmosphère Milieux Observations Spatiales , CNRS UMR 8190, BP3, 91371, Verrières-le-Buisson France, 4 LATMOS, Institut Pierre Simon Laplace-Université de Versailles-Saint-Quentin, Saint-Quentin en Yvelines France, 2 Laboratoire d'étude des Microstructures , CNRS-ONERA UMR, BP72, 92320 Chatillon cedex France

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5:30 PM - B7.5
Effects of Geometry, Mode Mixity, and Temperature on Dislocation Nucleation in Strained Electronics.

Tianlei Li 1 2 , Jinhaeng Lee 1 , Yanfei Gao 1
1 Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee, United States, 2 Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States

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B8: Poster Session
Session Chairs
Brent Gila
Wayne Johnson
Tuesday PM, December 01, 2009
Exhibit Hall D (Hynes)

9:00 PM - B8.1
Low-resistance Ti/Au Metal Contacts to n-Type Amorphous Gallium Indium Zinc Oxides.

Hyunsoo Kim 1 , Kyoung-Kook Kim 2
1 School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeouju Korea (the Republic of), 2 Dept of Nano-Optics, Korea Polytechnic University, Siheung Korea (the Republic of)

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9:00 PM - B8.10
Electrically Stable InGaZnO4 Thin Film Transistors using Sputter-deposited PMMA Gate Dielectric and Passivation Layers.

Dong Hun Kim 1 , Nam Gyu Cho 1 , Ho Gi Kim 1 , Ill-Doo Kim 2
1 Department of Materials Science and Engineering, KAIST, Daejeon Korea (the Republic of), 2 , KIST, Seoul Korea (the Republic of)

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9:00 PM - B8.11
Density-Functional Analysis on Vacancy Orbital and its Elastic Response of Silicon.

Takafumi Ogawa 1 , Kenji Tsuruta 2 , Hiroshi Iyetomi 1 , Hiroshi Kaneta 1 , Terutaka Goto 1
1 Graduate school of science and technology, Niigata University, Niigata, Niigata, Japan, 2 Graduate school of natural science and technology, Okayama University, Okayama, Okayama, Japan

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