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2009 MRS Fall Meeting & Exhibit

November 30 - December 4, 2009 | Boston
Meeting Chairs
: Kristi Anseth, Li-Chyong Chen, Peter Gumbsch, Ji-Cheng Zhao

Symposium I : III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions

2009-11-30   Show All Abstracts

Symposium Organizers

Shangjr (Felix) Gwo National Tsing-Hua University
Joel W. Ager Lawrence Berkeley National Laboratory
Fan Ren University of Florida
Oliver Ambacher Fraunhofer-Institut für Angewandte Festkörperphysik (IAF)
Leo Schowalter Crystal IS Inc.
I1: Growth and Doping
Session Chairs
Shangjr (Felix) Gwo
Monday PM, November 30, 2009
Independence W (Sheraton)

9:30 AM - **I1.1
Heteroepitaxy of m-plane (1010) InN on (100)-LiAlO2 Substrates and its Anisotropic Optical Behaviors.

Kuei-Hsien Chen 1 2 , Jr-Tai Chen 1 , Ching-Lien Hsiao 2 , Ying-Chieh Liao 3 , Li-Wei Tu 4 , Mitch Chou 5
1 Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei Taiwan, 2 Center for Condensed Matter Sciences, National Taiwan University, Taipei Taiwan, 3 Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei Taiwan, 4 Department of Physics, National Sun Yat-Sen University, Kaohsiung Taiwan, 5 Department of Materials Science & Opto-electronic Engineering, National Sun Yat-Sen University, Kaohsiung Taiwan

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10:00 AM - I1.2
Epitaxial Growth and Interface Study of GaN Films on MgAl2O4 Substrates.

Guoqiang Li 1 2 , Vlado Lazarov 1 , Shao-Ju Shih 1
1 Department of Materialsq, University of Oxford, Oxford United Kingdom, 2 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan China

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10:15 AM - I1.3
Efficient InGaN Quantum Wells and Light Emitters Grown by MOVPE on Misoriented GaN Substrates.

Piotr Perlin 1 2 , Tadek Suski 1 , Martin Albrecht 3 , Szymon Grzanka 2 , Grzegorz Staszczak 1 , Robert Czernecki 1 2 , Grzegorz Targowski 2 , Marcin Krysko 1 , Grzegorz Nowak 1 , Grzegorz Kamler 1 , Przemek Wisniewski 1 2 , Mike Leszczynski 1 2 , Boleslaw Lucznik 1
1 , Institute of High Pressure Physics, Warsaw Poland, 2 , TopGaN Ltd. , Warsaw Poland, 3 , Leibniz-Instituts für Kristallzüchtung, Berlin, Germany, Berlin Germany

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10:30 AM - I1.4
Selective Area Epitaxy of InGaN/GaN Stripes, Hexagonal Rings, and Triangular Rings for Achieving Green Emission.

Wen Feng 3 2 , Vladimir Kuryatkov 3 2 , Dana Rosenbladt 4 2 , Nenad Stojanovic 4 2 , Mahesh Pandikunta 3 2 , Sergey Nikishin 4 2 , Mark Holtz 1 2
3 Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas, United States, 2 Nano Tech Center, Texas Tech University, Lubbock, Texas, United States, 4 Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas, United States, 1 Physics, Texas Tech University, Lubbock, Texas, United States

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10:45 AM - I1.5
Free-Standing Zinc-Blende (Cubic) GaN Layers and Substrates Grown by Molecular Beam Epitaxy.

Anthony Kent 1 , Sergei Novikov 1 , Norzaini Zainal 1 , Andrey Akimov 1 , Thomas Foxon 1
1 School of Physics and Astronomy, University of Nottingham, Nottingham United Kingdom

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11:00 AM - *
break

11:30 AM - **I1.6
Doping of InN and AlN Bulk and Surfaces.

Chris Van de Walle 1
1 , University of California, Santa Barbara, Santa Barbara, California, United States

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12:00 PM - **I1.7
Two Mg Related Acceptors in GaN.

Bo Monemar 1 , Plamen Paskov 1 , Galia Pozina 1 , Carl Hemmingsson 1 , Peder Bergman 1 , Hiroshi Amano 2 , Isamu Akasaki 2 , Stephan Figge 3 , Detlef Hommel 3
1 , Linkoping University, Linkoping Sweden, 2 , Meijo University, Nagoya Japan, 3 , University of Bremen, Bremen Germany

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12:30 PM - I1.8
Calculation of Defect Distribution at Interfaces from Ab-initio Based Thermodynamic Data.

Christoph Freysoldt 1 , Bjoern Lange 1 , Joerg Neugebauer 1
1 Computational Materials Design, MPI für Eisenforschung, Düsseldorf Germany

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12:45 PM - I1.9
Surface Reconstructions and Magnesium Incorporation on Semipolar GaN(10-1-1) Surfaces.

Toru Akiyama 1 , Disuke Ammi 1 , Tomoki Yamashita 1 , Kohji Nakamura 1 , Tomonori Ito 1
1 , Mie Univsesity, Tsu-shi Japan

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I2: LEDs and Optical Properties I
Session Chairs
Tadek Suski
Monday PM, November 30, 2009
Independence W (Sheraton)

2:30 PM - **I2.1
Challenges and Opportunities in Solid-state Lighting.

E. Schubert 1 , Jong Kyu Kim 1
1 , Rensselaer Polytechnic Institute, Troy, New York, United States

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3:00 PM - I2.2
TiO2-based Transparent Conducting Oxide for GaN Light Emitting Diodes.

Taro Hitosugi 1 2 , Junpei Kasai 2 , Miki Moriyama 3 , Koichi Goshonoo 3 , N. Huong 4 , Shoichiro Nakao 2 , Naoomi Yamada 2 , Tetsuya Hasegawa 2 4
1 , Tohoku University, Sendai Japan, 2 , Kanagawa Academy of Science and Technology (KAST), Kawasaki Japan, 3 , Toyoda Gosei Co., LTD., Aichi Japan, 4 , University of Tokyo, Tokyo Japan

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3:15 PM - I2.3
Graded-refractive-index Micro-patterns on GaInN Light-emitting Diodes for Enhanced Light Extraction and Control Over the Far Field Emission Pattern.

Ahmed Nayaz Noemaun 1 , Frank Mont 1 , David Poxson 1 , Jong Kyu Kim 1 , E. Fred Schubert 1
1 , Rensselaer Polytechnic Institute, Troy, New York, United States

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3:30 PM - I2.4
Nitride Based Light Emitting Diodes Embedded with a Wire-grid Polarizer.

David Meyaard 1 , Jaehee Cho 1 , Martin Schubert 1 , Sameer Chhajed 1 , Jong Kyu Kim 1 , E. Fred Schubert 1
1 Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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3:45 PM - I2.5
Spatially and Spectrally Resolved Cathodoluminescence of Hexagonal GaN Pyramids Covered by InGaN Single Quantum Well.

Frank Bertram 1 , Sebastian Metzner 1 , Thomas Hempel 1 , Juergen Christen 1 , Michael Jetter 2 , Clemens Waechter 2 , Peter Michler 2
1 , Otto-von-Guericke-University Magdeburg, Magdeburg Germany, 2 , University of Stuttgart, Stuttgart Germany

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4:00 PM - *
break

4:30 PM - **I2.6
On the Light Emission in GaN Based Heterostructures at High Injection,

Hadis Morkoc 1 , Umit Ozgur 1 , Huiyong Liu 1 , Xing Li 1 , Xianfeng Ni 1
1 ECE and Physics, Virginia Commonwealth University, Richmond , Virginia, United States

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5:00 PM - I2.7
The Origin of the High Diode-ideality Factors in GaInN/GaN Multiple Quantum Well Light-emitting Diodes.

Di Zhu 1 2 , Jiuru Xu 1 2 , Ahmed Noemaun 1 3 , Jong-Kyu Kim 1 3 , E. Fred Schubert 1 3 , Mary Crawford 4 , Daniel Koleske 4
1 Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, United States, 3 Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States, 4 , Sandia National Laboratories, Albuquerque, New Mexico, United States

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5:15 PM - I2.8
Reduced Efficiency Droop in High-power InGaN-based Vertical-structure LEDs using External Stress Modulation.

Jun Ho Son 1 , Jong-Lam Lee 1
1 Materials Science and Engineering, POSTECH, Pohang Korea (the Republic of)

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5:30 PM - I2.9
High Performance of GaN Thin Films Deposited on Sapphire Substrates Coated with a Silica-submicron-sphere Monolayer.

Nobuhiro Hagura 1 , Ferry Iskandar 1 , Kikuo Okuyama 1
1 Department of Chemical Engineering, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima Japan

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5:45 PM - I2.10
Self-segregated In Clusters Observed in High Efficient InGaN-based Blue LEDs by using Cs-corrected STEM and 3D Atom Probe Tomography.

Gil Ho Gu 1 , Chan Gyung Park 1 2
1 Materials Sciecne and Engineering, POSTECH, Pohang, Gyungbuk, Korea (the Republic of), 2 National Center for Nanomaterials Technology, POSTECH, Pohang, Gyungbuk, Korea (the Republic of)

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2009-12-01   Show All Abstracts

Symposium Organizers

Shangjr (Felix) Gwo National Tsing-Hua University
Joel W. Ager Lawrence Berkeley National Laboratory
Fan Ren University of Florida
Oliver Ambacher Fraunhofer-Institut für Angewandte Festkörperphysik (IAF)
Leo Schowalter Crystal IS Inc.
I3: Surface and Interface Properties I
Session Chairs
Joel Ager
Tuesday AM, December 01, 2009
Independence W (Sheraton)

9:30 AM - **I3.1
Interface, Bulk and Surface Electronic Properties of InN.

Philip King 1 , Tim Veal 1 , Chris McConville 1
1 Department of Physics, University of Warwick, Coventry United Kingdom

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10:00 AM - I3.2
In-situ Control of the Carrier Density Profile of MBE-Grown Hexagonal Indium Nitride.

Katharina Kloeckner 1 , Marcel Himmerlich 1 , Roland Koch 1 , Vladimir Polyakov 2 , Anja Eisenhardt 1 , Thomas Haensel 1 , S. Imad-Uddin Ahmed 1 , Stefan Krischok 1 , Juergen Schaefer 1 3
1 Institut für Physik and Institut für Mikro- und Nanotechnologien, TU-Ilmenau, Ilmenau Germany, 2 , Fraunhofer Institute for Applied Solid State Physics, Freiburg Germany, 3 Department of Physics, Montana State University, Bozeman, Montana, United States

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10:15 AM - I3.3
Angle-resolved Photoemission Spectroscopy of Quantized Electron Accumulation at N-polar InN Surfaces: Effects of Surface Preparation and Alkali-metal Deposition.

Leyla Colakerol 1 , Louis Piper 1 , Alexei Fedorov 2 , Papo Chen 3 , Theodore Moustakas 3 , Kevin Smith 1
1 Department of Physics, Boston University, Boston , Massachusetts, United States, 2 Advanced Light Source, Lawrence Berkeley National Laboratory,, Berkeley, California, United States, 3 Department of Electrical and Computer Engineering, Boston University, Boston, New York, United States

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10:30 AM - I3.4
Influence of Defects, Dopants, and Surface Orientation on Free Carrier Properties of InN.

V. Darakchieva 1 2 , M. Schubert 3 , E. Alves 1 , K. Lorenz 1 , M. Xie 2 , Tino Hofmann 3 , W. Schaff 4 , L. Chen 5 , L. Tu 6 , Y. Nanishi 7
1 , Instituto Tecnológico e Nuclear, Sacavém Portugal, 2 , Linköping University, Linköping Sweden, 3 , University of Nebraska-Lincoln, Lincoln, Nebraska, United States, 4 , Cornell University, Ithaca, New York, United States, 5 , National Taiwan University, Taipei Taiwan, 6 , National San Yat-Sen University, Kaohsiung Taiwan, 7 , Ritsumeikan University, Shiga Japan

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10:45 AM - I3.5
Raman Scattering by LO-phonon-plasmon Coupled Modes in InN Epilayers: Dependence on the Excitation Laser Intensity and Wavelength.

Ramon Cusco 1 , Jordi Ibanez 1 , Esther Alarcon-Llado 1 , Tomohiro Yamaguchi 2 , Yasushi Nanishi 2 , Luis Artus 1
1 , Inst. Jaume Almera (C.S.I.C.), Barcelona Spain, 2 , Faculty of Science and Engineering,Ritsumeikan University, Shiga Japan

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11:00 AM - *
break

11:30 AM - **I3.6
InN and its Native Oxide In2O3: Electronic and Optical Properties from First Principles.

Friedhelm Bechstedt 1
1 IFTO , Friedrich-Schiller-University Jena, Jena Germany

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12:00 PM - **I3.7
Origin of High Indium Incorporation on the Semipolar InGaN(11-22) Surface.

John Northrup 1
1 , Palo Alto Research Center, Palo Alto, California, United States

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12:30 PM - I3.8
First-principles Study of Bare and Oxidized AlN and GaN Polar and Non-polar Surfaces.

Maosheng Miao 1 , Anderson Janotti 1 , Chris Van de Walle 1
1 Materials Department, University of California, Santa Barbara, California, United States

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12:45 PM - I3.9
Defect Levels from Partial Dislocations and Stacking Faults in GaN.

Iskander Batyrev 1 , T. Zheleva 1 , K. Jones 1
1 , US Army Rsearch Laboratory, Adelphi, Maryland, United States

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I4: Surface and Interface Properties II
Session Chairs
Fan Ren
Tuesday PM, December 01, 2009
Independence W (Sheraton)

2:30 PM - I4.1
Manipulation of Surface Charge on n-type GaN.

Michael Foussekis 1 , Josephus Ferguson 1 , James C. Moore 2 , Michael A. Reshchikov 1 , Alison Baski 1
1 Physics, Virginia Commonwealth Univ., Richmond, Virginia, United States, 2 Chemistry and Physics, Longwood University, Farmville, Virginia, United States

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2:45 PM - I4.2
Photocatalytic Cleavage of Self-assembled Organic Monolayers on GaN Surfaces.

J. Howgate 1 , S. Schoell 1 , Ian Sharp 1 , M. Hoeb 1 , W. Steins 1 , B. Baur 1 , M. Stutzmann 1 , M. Eickhoff 2
1 , Walter Schottky Institut, Technische Universität München, Garching Germany, 2 , I. Physikalisches Institut, Justus-Liebig-Universität, Giessen Germany

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3:00 PM - I4.3
Photoelectron Spectroscopy and X-ray Diffraction Investigation of Ultrathin InN/AlN Heterojunction.

Cheng-Tai Kuo 1 , Hong-Mao Li 1 , Shangjr Gwo 1
1 Physics, National Tsing-Hua University, Hsinchu Taiwan

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3:15 PM - I4.4
Spontaneous and Piezoelectric Polarization Effects in Wurtzite Group III Nitride Heterojunction Varactor Characteristics.

Choudhury Praharaj 1
1 Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah, United States

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3:30 PM - I4.5
AlGaN/GaN Two-dimensional Electron Gas (2DEG) Structures on Low-defect Density Quasi-bulk GaN Substrates as Lateral Devices for Use in Emerging Electric Power Distribution Electric Switch Applications.

Mark Johnson 1 , Judith Grenko 1 , Matt Veety 1 , Mike Morgensen 1 , Doug Barlage 1 , Tanya Paskova 2
1 , nc state university, Raleigh, North Carolina, United States, 2 , Kyma Technologies, Raleigh, North Carolina, United States

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3:45 PM - *
break

4:15 PM - I4.6
Atomic and Electronic Structure of the Non-polar GaN(1-100) Cleaved Surface.

Marco Bertelli 1 , Peter Loeptien 1 , Martin Wenderoth 1 , Angela Rizzi 1 , Rainer Ulbrich 1 , Maria Clelia Righi 2 , Andrea Ferretti 2 , Layla Samos 2 , Carlo Bertoni 3 , Alessandra Catellani 4
1 IV. Physikalisches Institut, Georg-August University Goettingen, Goettingen Germany, 2 CNR-INFM S3 and Physics Dept. , Università di Modena e Reggio Emilia, Modena Italy, 3 S3 and CNISM, Università di Modena e Reggio Emilia, Modena Italy, 4 , CNR-IMEM, Parma Italy

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4:30 PM - I4.7
Low Contact Resistance Metal Semiconductor Field Effect Transistors with N-polar GaN Source/Drain by MOCVD.

Jinqiao Xie 1 , Seiji Mita 1 , Anthony Rice 2 , James Tweedie 2 , Ramon Collazo 2 , Zlatko Sitar 2
1 , Hexatech Inc, Morrisville , North Carolina, United States, 2 Materials Science and Engineering , North Carolina State University, Raleigh, North Carolina, United States

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4:45 PM - I4.8
Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation.

Donat As 1 , Elena Tschumak 1 , Florentina Niebelschuetz 2 , W. Jatal 2 , Joerg Pezoldt 2 , Ralf Granzner 3 , Frank Schwierz 3 , Klaus Lischka 1
1 Department of Physics, University of Paderborn, Paderborn Germany, 2 FG Nanotechnologie, Institut für Mikro- und Nanotechnologien, TU Ilmenau, Ilmenau Germany, 3 FG Festkörperelektronik, TU Ilmenau, Ilmenau Germany

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5:00 PM - I4.9
Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer.

Hongbo Yu 1 , Sefer Lisesivdin 1 , Basar Bolukbas 1 , Ozgur Kelekci 1 , Mustafa Ozturk 1 , Huseyin Cakmak 1 , Pakize Demirel 1 , Ekmel Ozbay 1 2 3
1 , Nanotechnology Research Center, Bilkent University, Ankara Turkey, 2 Department of Physics, Bilkent University, Ankara Turkey, 3 Department of Electrical and Electronics Engineering, Bilkent University, Ankara Turkey

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I5: Poster Session: III-Nitride Growth, Doping, and Device Processing
Session Chairs
Shangjr (Felix) Gwo
Wednesday AM, December 02, 2009
Exhibit Hall D (Hynes)

9:00 PM - I5.1
TEM Analysis of the Microstructures of Undoped and Doped AlN/sapphire Grown by MOCVD.

Bo Cai 1 2 , Mim Nakarmi 1 2
1 Physics, Brooklyn College of the CUNY, Brooklyn, New York, United States, 2 Graduate Center, the City University of New York, New York, New York, United States

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9:00 PM - I5.10
Kinetics and Mechanism of Formation of GaN from β-Ga2O3 by NH3.

Toshiki Sakai 1 , Hajime Kiyono 1 , Shiro Shimada 1
1 , Hokkaido University, Sapporo Japan

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9:00 PM - I5.11
Characteristics of p-type Mg Dopants Activation in Polar and Non-polar GaN Grown by Metalorganic Chemical Vapor Deposition.

Jisu Son 1 2 , Kwang Hyeon Baik 1 , SungHo Lee 1 , Yong Gon Seo 1 , Sung-Min Hwang 1 , Tae Geun Kim 2
1 Green-energy Research Center, Korea Electronics Technology Institute, Seongnam Korea (the Republic of), 2 Electronic Engineering, Korea University, Seoul Korea (the Republic of)

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9:00 PM - I5.12
Control of Facet Structures in Selective Area Growth (SAG) of a-plane GaN by MOVPE.

Bei Ma 1 , Reina Miyagawa 1 , Hideto Miyake 1 , Kazumasa Hiramatsu 1
1 , Department of Electrical and Electronic Engineering, Mie University, Mie University, Tsu Japan

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9:00 PM - I5.13
Influence of Gallium Supersaturation on the Growth of N-polar GaN Films by Metalorganic Chemical Vapor Deposition.

Seiji Mita 1 , Ramon Collazo 2 , Anthony Rice 2 , James Tweedie 2 , Jinqiao Xie 1 , Rafael Dalmau 1 , Zlatko Sitar 2
1 , Hexa Tech Inc., Morrisville, North Carolina, United States, 2 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States

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9:00 PM - I5.14
High-quality Ti-based Schottky Contacts to p-type GaN.

Ja-soon Jang 1 , Sun-Ho Jang 1
1 Department of ECE, Yeungnam University, Gyeongsan-si, Gyeongbuk, Korea (the Republic of)

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9:00 PM - I5.15
Quantitative Description of GaN Photoelectrochemical Oxidation and Etching Using an Equivalent Circuit Model.

Shao-Ning Pei 1 , Kieren Chen 2 , Daniel Porto 1 , Luke Lee 1 , Pei-Cheng Ku 1
1 EECS, University of Michigan, Ann Arbor, Michigan, United States, 2 MSE, University of Michigan, Ann Arbor, Michigan, United States

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9:00 PM - I5.16
Low-resistance Ohmic Contacts to N-face p-GaN for the Fabrication of Functional Devices.

Seung Cheol Han 1 , Jae-Kwan Kim 1 , Jun Young Kim 1 , Joon Seop Kwak 1 , Kangho Kim 2 , Jong-Kyu Kim 3 , E.Fred Schubert 3 , Kyoung-Kook Kim 4 , Ji-Myon Lee 1
1 Department of Materials Science and Metallurgical Engineering, Sunchon National University, Sunchon, Chonnam, Korea (the Republic of), 2 , Korea Photonics Technology Institute, Gwangju Korea (the Republic of), 3 Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States, 4 Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Kyonggi, Korea (the Republic of)

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9:00 PM - I5.17
Low Temperature Growth of c-polar and a-nonpolar GaN on Sapphire Substrates using UHV PLD.

Pranav Gupta 1 , Thomas Rawdanowicz 1 , Titas Dutta 1 , Alok Gupta 1 , Jagdish Narayan 1
1 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States

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9:00 PM - I5.19
Effects of Controlling the Indium to Nitrogen Growth Ratio on the Structural and Optical Properties of InN Grown by Molecular-Beam Epitaxy.

Paul Minor 1 , Michael Sattler 1 , Morgan Ware 1 , Eric Decuir 1 , Omar Manasreh 1 , Martin Schmidbauer 2 , Yuriy Mazur 1 , Gregory Salamo 1
1 , University of Arkansas, Fayetteville, Arkansas, United States, 2 , Leibniz-Institut für Kristallzüchtung, Berlin Germany

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9:00 PM - I5.2
Growth of High Quality c-plane AlN on a-plane Sapphire.

Reina Miyagawa 1 , Jiejun Wu 1 , Hideto Miyake 1 , Kazumasa Hiramatsu 1
1 , Mie Univ., Tsu Japan

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9:00 PM - I5.20
Growth and X-ray Diffraction Structure Study of InGaN/GaN Quantum Wells Implanted with Eu3+ Ions.

Mohammad Ebdah 1 , Wojciech Jadwisienczak 2 , Martin Kordesch 1 , Andre Anders 3
1 Department of Physics and Astronomy, Ohio University, Athens, Ohio, United States, 2 School of EECS, Ohio University, Athens, Ohio, United States, 3 , Lawrence Berkeley National Laboratory, Berkeley, California, United States

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9:00 PM - I5.21
The Characterization of Indium-rich InGaN Alloys Grown by High-pressure CVD.

Nikolaus Dietz 1 , Mustafa Alevli 1 , Ramazan Atalay 1 , Buegler Max 1 , Goksel Durkaya 1 , Ronny Kirste 2 , Jan-Hindrik Schulze 2 , Axel Hoffmann 2
1 Physics & Astronomy, Georgia State University, Atlanta, Georgia, United States, 2 Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Berlin, Germany

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