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2011 MRS Fall Meeting & Exhibit

November 28-December 2, 2011 | Boston

Meeting Chairs: Cammy R. Abernathy, Paul V. Braun, Masashi Kawsaki, Kathyn J. Wahl

Symposium L : Topological Insulator Materials

2011-11-28   Show All Abstracts

Symposium Organizers

Yi Cui Stanford University
Hailin Peng Peking University
Claudia Felser Johannes Gutenberg University Mainz
Shuichi Murakami Tokyo Institute of Technology
L1
Session Chairs
Yi Cui
Shoucheng Zhang
Monday AM, November 28, 2011
Room 301 (Hynes)

9:30 AM - *L1.1
Topological Materials.

Shoucheng Zhang 1
1 Department of Physics, Applied Physics, Stanford University, Stanford, California, United States

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10:15 AM - L1.2
Penetration Depth of Edge/Surface States of Topological Insulators.

Shuichi Murakami 1 , Masaki Wada 1
1 Department of Physics, Tokyo Institute of Technology, Tokyo, 0, Japan

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10:30 AM - L1.3
Theoretical Simulation of Topological Surface State in Topologically Nontrivial-Trivial Heterostructure.

Qianfan Zhang 1 , Zhiyong Zhang 1 , Yi Cui 1
1 Department of Materials Science and Engineering, Stanford University, Stanford, California, United States

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10:45 AM - L1.4
Vertical Transport in Topological Insulator Thin Films.

Byounghak Lee 1 2 , Rafi Bistrizer 2 , Allan MacDonald 2
1 Physics, Texas State University, San Marcos, Texas, United States, 2 Physics, The University of Texas at Austin, Austin, Texas, United States

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11:00 AM -
BREAK

11:30 AM - **L1.5
Topological Insulator Surface States for Magnetoelectric, Spintronic, and Thermoelectric Effects.

Joel Moore 1 2
1 Department of Physics, UC Berkeley, Berkeley, California, United States, 2 Materials Sciences Division, LBNL, Berkeley, California, United States

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12:00 PM - L1.6
False-Positive and False-Negative Assignments of Topological Insulators in Density-Functional Theory and Hybrids.

Julien Vidal 1 , Xiuwen Zhang 2 , Jun-Wei Luo 1 , Alex Zunger 1
1 , National Renewable Energy Laboratory, Golden, Colorado, United States, 2 Department of Physics , Colorado School of Mines, Golden, Colorado, United States

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12:15 PM - L1.7
Topological Insulator Application: All-Electrical Switching of Conductance.

Michael Povolotskyi 1 , Tillmann Kubis 1 , Gerhard Klimeck 1
1 , Purdue University, West Lafayette, Indiana, United States

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L2
Session Chairs
Xi Chen
Monday PM, November 28, 2011
Room 301 (Hynes)

2:30 PM - **L2.1
STM Studies of Topological Insulators Grown by MBE.

Xi Chen 1 , Ke He 2 , Xucun Ma 2 , Xue Qi-Kun 1 2
1 Physics, Tsinghua University, Beijing China, 2 Institute of Physics, Chinese Academy of Sciences, Beijng China

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3:00 PM - **L2.2
Manipulating the Dirac Fermions of the 3D Topological Insulators Studied by STM and Synchrotron Radiation ARPES.

Akio Kimura 1
1 Graduate School of Science, Hiroshima University, Higashi-Hiroshima Japan

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3:30 PM - L2.3
Two-Dimensional Electron Gases on the Surface of the Topological Insulator Bi2Se3.

Marco Bianchi 1 , Richard Hatch 1 , Jianli Mi 2 , Bo Iversen 2 , Philip King 3 , Philip Hofmann 1
1 Physics and Astronomy and Interdisciplinary Nanoscience Center, Aarhus University, Aarhus C Denmark, 2 Chemistry and Center for Materials Crystallography and Interdisciplinary Nanoscience Center, Aarhus University, Aarhus C Denmark, 3 Physics and Astronomy, University of St. Andrews, St. Andrews United Kingdom

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3:45 PM - L2.4
Electronic Structure of Topologically Nontrivial Sb Films: A Reconciliation of Spin-Polarized Surface States and Unpolarized Quantum-Well States.

Guang Bian 1 , Thomas Miller 1 , Tai Chiang 1
1 Physics, Univ. of Illinois, Urbana, Illinois, United States

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4:00 PM - *
Break

4:30 PM - **L2.5
Theoretical Design of Topological Insulators.

Naoto Nagaosa 1
1 Department of Applied Physics, University of Tokyo, Tokyo Japan

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5:00 PM - L2.6
Direct Evidence of Three-Dimensional Topological Insulator Phase in Pb Based Ternary Chalcogenide.

Kenta Kuroda 1 , Mao Ye 1 , Hirokazu Miyahara 1 , Yoshifumi Ueda 2 , Koji Miyamoto 3 , Taichi Okuda 3 , Masasi Arita 3 , Kenya Shimada 3 , Hirofumi Namatame 3 , Masaki Taniguchi 1 3 , Akio Kimura 1
1 , Hiroshima University, Higashi Hiroshima, Hiroshima Japan, 2 , Kure National Technology of College, Kure, Hiroshima Japan, 3 , Hiroshima Synchrotron Radiation Center, Higashi Hiorshima, Hiroshima Japan

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5:15 PM - L2.7
Epitaxial Growth of High-Quality Bi2Te3 and Sb2Te3 Thin Films on GaAs (111).

Zhaoquan Zeng 1 3 , Dongsheng Fan 2 3 , Chen Li 1 3 , Yusuke Hirono 1 3 , Timothy Morgan 1 3 , Jian Wang 5 6 , Joon Sue Lee 5 , Zhiming Wang 1 3 4 , Shui-Qing Yu 2 3 , Aqiang Guo 1 3 , Gregory Salamo 1 3
1 Department of Physics, University of Arkansas, Fayetteville, Arkansas, United States, 3 Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas, United States, 2 Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas, United States, 5 The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, United States, 6 International Center for Quantum Materials and State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing China, 4 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuang, China

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2011-11-29   Show All Abstracts

Symposium Organizers

Yi Cui Stanford University
Hailin Peng Peking University
Claudia Felser Johannes Gutenberg University Mainz
Shuichi Murakami Tokyo Institute of Technology
L3
Session Chairs
M. Zahid Hasan
Tuesday AM, November 29, 2011
Room 301 (Hynes)

9:30 AM - *L3.1
Topological Surface States in Topological Insulators and Superconductors: Discovery and the New Frontiers.

M. Zahid Hasan 1
1 Department of Physics, Princeton University, Princeton, New Jersey, United States

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10:15 AM - L3.2
Thin Film Electronic Properties of Ternary Topological Insulator.

Jiwon Chang 1 , Leonard Register 1 , Sanjay Banerjee 1 , Bhagawan Sahu 1
1 , The University of Texas at Austin, Austin, Texas, United States

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10:30 AM - L3.3
Crystal Growth and Physical Property of Bi-Sb-Te-Se Topological Insulator Materials.

Genda Gu 1 , Alina Yang 1 , Zhijun Xu 1 , J. Tranquada 1 , J. Zhao 1 , Z. Pan 1 , W. Si 1 , T. Valla 1
1 , Brookhaven National laboratory, Upton, New York, United States

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10:45 AM - L3.4
Engineering of the Interfacial Topological States in the Guest-Atom-Intercalated 3D Topological Insulator.

Mao Ye 1 , S. Eremeev 2 3 , K. Kuroda 1 , M. Nakatake 4 , E. Krasovskii 5 6 7 , E. Chulkov 5 6 , M. Arita 4 , K. Miyamoto 4 , T. Okuda 4 , K. Shimada 4 , H. Namatame 4 , M. Taniguchi 1 4 , Y. Ueda 8 , A. Kimura 1
1 Graduate School of Science, Hiroshima University, Higashi-Hiroshima Japan, 2 , Institute of Strength Physics and Materials Science, Tomsk Academic City, Tomsk, Russian Federation, 3 , Tomsk State University, Tomsk Russian Federation, 4 Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima Japan, 5 , Departamento de Física de Materiales UPV/EHU and Centro de Física de Materiales CFM and Centro Mixto CSIC-UPV/EHU, SanSebastián/Donostia Spain, 6 , Donostia International Physics Center (DIPC), SanSebastián/Donostia Spain, 7 , IKERBASQUE, Basque Foundation for Science, Bilbao Spain, 8 , Kure National College of Technology, Kure Japan

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11:00 AM -
BREAK

11:30 AM - **L3.5
Electronic Structure of Topological Insulators.

Zhi-xun Shen 1
1 Stanford University , Department of Applied Physics, Physics, SSRL, Stanford, California, United States

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12:00 PM - L3.6
The Third Generation of the Dirac Cone as a Proof of Stacked 2D Electron Systems in Iron Pnictides.

Koichi Kusakabe 1
1 Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, Japan

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12:15 PM - L3.7
Effects of Magnetic Doping on Weak Antilocalization in Bi2Se3 Topological Insulator Nanoribbons.

Judy Cha 1 , Desheng Kong 1 , Seung Sae Hong 2 , Kristie Koski 1 , Yi Cui 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Department of Applied Physics, Stanford University, Stanford, California, United States

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L4
Session Chairs
Alex Balandin
Hailin Peng
Tuesday PM, November 29, 2011
Room 301 (Hynes)

2:30 PM - **L4.1
Topological Insulators: Non-Magnetic vs. Magnetic.

Zhong Fang 1
1 , Institute of Physics, Beijing China

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3:00 PM - **L4.2
Materials-Oriented Research of Topological Insulators and Superconductors.

Yoichi Ando 1
1 ISIR, Osaka Univeristy, Osaka Japan

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3:30 PM - L4.3
Electronic Transport of Surface State in Doped Bi2Se3 Topological Insulator Nanoribbons.

Seung Sae Hong 1 , Judy Cha 2 , Desheng Kong 2 , Yi Cui 2
1 Department of Applied Physics, Stanford university, Stanford, California, United States, 2 Department of Materials Science and Engineering, Stanford University, Stanford, California, United States

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3:45 PM - L4.4
High Density Intercalation of Metal Atoms in Topological Insulator Nanoribbons.

Kristie Koski 1 , Judy Cha 1 , Desheng Kong 1 , Seung Sae Hong 1 , Yi Cui 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States

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4:00 PM -
BREAK

4:30 PM - **L4.5
Micro-Raman and Low-Frequency Noise Spectroscopy of Mechanically Exfoliated Thin Films of Topological Insulators of Bi2Te3 Family.

Alexander Balandin 1
1 Department of Electrical Engineering, University of California - Riverside, Riverside, California, United States

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5:00 PM - L4.6
Raman Spectroscopy of Topological Insulator Bi2Se3, Bi2Te3 and Sb2Te3 Nanoplatelets.

Jun Zhang 1 2 , Zeping Peng 1 , Mildred Dresselhaus 5 , Qihua Xiong 3 4
1 School of Physical and Mathematical Sciences, Nanyang Technological Uni, Singapore Singapore, 2 School of Electrical and Electronic Engineering, Nanyang Technological University, singapore Singapore, 5 School of Physical Science and Technology, Southwest University, Chongqing China, 3 Department of Physics, Masachusetts Institute of Technology, Cambridge, Massachusetts, United States, 4 Department of Electrical Engineering and Computer Science, Masachusetts Institute of Technology, Cambridge, Massachusetts, United States

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2011-11-30   Show All Abstracts

Symposium Organizers

Yi Cui Stanford University
Hailin Peng Peking University
Claudia Felser Johannes Gutenberg University Mainz
Shuichi Murakami Tokyo Institute of Technology
L5
Session Chairs
Laurens Molenchamp
Wednesday AM, November 30, 2011
Room 301 (Hynes)

9:30 AM - *L5.1
Dirac Fermions in HgTe Quantum Wells.

Laurens Molenkamp 1
1 Department of Physics, University of Wuerzburg, Wuerzburg, Bavaria, Germany

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10:15 AM - **L5.2
Ambipolar Field Effect in Ultrathin Nanoplates of Topological Insulators.

Desheng Kong 1 , Yulin Chen 2 3 4 , Judy Cha 1 , Qianfan Zhang 1 , James Analytis 2 4 , Keji Lai 2 3 , Zhongkai Liu 2 3 4 , Seung Sae Hong 2 , Kristie Koski 1 , Sung-Kwan Mo 5 , Zahid Hussain 5 , Ian Fisher 2 4 , Zhi-Xun Shen 2 3 4 , Yi Cui 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Applied Physics, Stanford University, Stanford, California, United States, 3 Physics, Stanford University, Stanford, California, United States, 4 Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California, United States, 5 Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, United States

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10:45 AM - L5.3
Tunability of the Critical Width of a 2D-Topological Insulator.

Parijat Sengupta 1 , Tillmann Kubis 1 , Yaohua Tan 1 , Michael Povolotskyi 1 , Gerhard Klimeck 1
1 Electrical Engineering, Purdue University, West Lafayette, Indiana, United States

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11:00 AM -
BREAK

11:30 AM - **L5.4
Two Dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi2Se3 Nanowires and Nanoribbons.

Xuan Gao 1
1 Department of Physics, Case Wastern Reserve University, Cleveland, Ohio, United States

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12:00 PM - L5.5
Liquid Phase Exfoliation and Characterization of Layered Thermoelectric Metal Chalcogenides.

Mustafa Lotya 1 2 , Jonathan Coleman 1 2
1 School of Physics, Trinity College Dublin, Dublin Ireland, 2 , Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Dublin Ireland

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12:15 PM - L5.6
Microstructure Evolution of Bi-Te Films with Post Annealing for Thermoelectric Applications.

Seungmin Hyun 1 , Seong-jae Jeon 1 2 , Minsub Oh 1 2 , Hoo-jeong Lee 2 , Ho-ki Lyeo 3
1 Department of Nano-Mechanics, Korea Institute of Machinery and Materials, Daejeon Korea (the Republic of), 2 Materials Science and Engineering, Sungkyunkwan University, Suwon Korea (the Republic of), 3 , Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of)

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