The
tutorial focuses on the fundamentals and applications of
heterogeneously integrated structures using 1D, 2D, and 3D materials
from the growth of 3D materials on 2D materials, and various lift-off
technologies to heterogeneous integration of electronic/optoelectronic
devices.
Remote Epitaxy: Growth of 3D Materials on 2D Materials
Jeehwan Kim, Massachusetts Institute of Technology
The
instructor will discuss a new epitaxy lift-off technique, a so-called
remote epitaxy that can produce freestanding semiconductor membranes.
Discussion will include 1) Remote epitaxy mechanism 2) High yield
peeling mechanism 3) Reusability of the substrates 4) Economic aspect of
remote epitaxy and 5) Heterointegration of 3D materials with 2D materials
for advanced heterostructuring.
van der Waals Epitaxy : Epitaxial Growth of 2D and 3D Materials
Xinqiang Wang, Peking University
The
instructor will provide the overview regarding the epitaxial growth of
Nitride-based semiconductor materials by MOVPE including GaN and h-BN,
and design device structures for opto-electronic devices. In addition,
the tutorial will cover the fabrication of nanostructures and materials
characterization. The epitaxial growth of 3D and 2D materials and
characterization of them is the basis of fabrication of
heterointegration systems for various device applications.
Heterostructures Built on Three-Dimensional (3D) Semiconductor
Zhenqiang (Jack) Ma, University of Wisconsin-Madison
Heterostructures
built on three-dimensional (3D) semiconductor materials are rooted in
the theory conceived by Nobel Laureate Hebert Kroemer in 1957. Since
then, the four classes, namely, GaAs-, InP-, Si/Ge-, and
III-nitrides-based heterostructures, have revolutionized the electronics
and optoelectronics that set the foundation of today’s communications,
lighting, sensing, infotainment, etc. These heterostructures were
universally formed by epitaxy techniques uniquely governed and enabled
by the stringent requirements of lattice matching. Limited by this
requirement, realizing heterostructures between lattice-mismatched
semiconductors has been a decades-long obstacle, although the materials
space to explore and the number of heterostructures that can be made are
vast compared to its lattice-matched counterparts. In this tutorial,
lattice-mismatched heterostructures, i.e., heterogeneous
heterostructures, or arbitrary heterostructures, formed via
semiconductor grafting based on a quantum tunneling gluing approach, are
described. The tutorial will include: the history of attempts to form
lattice-mismatched heterostructures; physical principles of bypassing
the lattice constraints; fabrication methods and scalability; and a set
of application examples that are selected from about 18 pairs of
heterostructures formed between Si, Ge, GeSn, GaAs, InGaAs, AlGaAs, GaN,
AlGaN, SiC, GaN, Diamond, β-Ga2O3, and CsPbBr3.
van der Waals Heterostructures
Deep Jariwala, University of Pennsylvania and Xiangfeng Duan, University of California, Los Angeles
The
isolation of a growing number of two-dimensional (2D) van der Waals
(vdW) materials has inspired worldwide efforts to integrate distinct 2D
materials into vdW heterostructures. Over the past decade a tremendous
amount of research activity has occurred in assembling disparate 2D
materials into “all-2D” van der Waals heterostructures, thereby making
outstanding progress on fundamental studies at 2D/2D interfaces.
However, practical applications of 2D and other low-dimensional
materials will require a broader integration strategy. Namely,
integration of 2D materials with other self-passivated,
quantum-confined, or molecular materials will be necessary. In this
regard significant progress has been achieved in recent years, which
involves successful integration of 2D materials with organic small
molecules, quantum-dots, nanocrystals, semiconducting polymers, and
inorganic nanowires, as well as carbon-nanotubes. These studies have
produced interesting results, both in terms of basic science as well as
in device applications including in photodetectors, logic, memory, and
light emitting devices. In addition, 2D van der Waals layers have also
provided a rich and interesting avenue in terms of hetero-integration
with three-dimensional (3D) and bulk materials including 3D
semiconductors, piezoelectrics, ferroelectrics, and magnets. The 2D/3D
combinations are particularly favorable and attractive in terms of
vertical integration on Silicon CMOS and enabling “More than Moore”
approaches including memory, electronic-photonic integration, etc., for
semiconductor chips. This tutorial will provide an overview of the
progress on the above described heterostructures and their devices,
focusing on the unique advantages and capabilities that each materials
combination provides. It will end with a broad and forward-looking
perspective on future investigation and development opportunities in
mixed-dimensional heterostructures and their applications for the
research community.