Call for Papers

Please contact the symposium organizers with questions.

In the era of "big data" and the "Internet of Things" the ever-expanding need for computational resources will be make evident the need for reduced energy consumption in modern information technologies. Energy is increasingly becoming a critical issue in the current architecture of processor-centric computing (von Neumann architectures) based on CMOS technology. To solve this bottleneck, researchers are expanding the search to new materials systems in search of the enabling understanding and phenomena that will make possible new technologies beyond CMOS including data-centric architectures including, for example, in-memory and near-memory computing which have been suggested as a promising solution. There is a grow set of foundational materials research required to make these device concepts possible and this represents an important research direction in the field.

This session, in turn, focuses on the discussion and analysis of those material solutions including aspects of fundamental materials response and phenomena, innovative synthesis approaches to produce such materials, associated process/processing/fabrication developments, and device prototypes focused on the realization of data-centric computing/AI technology for new types of low-power memory and logic devices.

Topics will include:

• Piezoelectric and ferroelectrics materials for devices
• Magnetic materials for devices
• Multiferroic and magnetoelectric materials for devices
• Heterostructures of and interfaces in piezoelectric, ferroelectric, magnetic, multiferroic, etc. materials
• Voltage-driven evolution of polarization, magnetic, and multiferroic states
• Current driven elements based on spin-orbit coupling
• Domain-wall nanoelectronics
• Topological textures in magnetic and polar materials and device prototypes
• Novel patterning and device fabrication techniques of piezoelectric, ferroelectric, magnetic, and multiferroic materials and heterostructures
• Large area thin-film deposition of complex oxides (e.g., ALD, PVD, CVD, etc.)
• Monolithic integration on semiconductors
• Ultralow voltage (100 mV) and power (1 aJ) testing and switching dynamics
• Self-aligning patterning techniques
• Integration issues and BEOL compatibility
• Materials prediction, microstructure simulation, and device modelling

Invited Speakers (tentative):

• Thanasis Dimoulas (Demokritos, Greece)
• Regina Dittmann (Forschungszentrum Jülich GmbH, Germany)
• Judith Driscoll (University of Cambridge, United Kingdom)
• Claudia Felser (Max Planck Institute for Chemical Physics of Solids, Germany)
• Yunseok Kim (Sungkyunkwan University, Republic of Korea)
• Chih-Huang Lai (National Tsing Hua University, Taiwan)
• Sasikanth Manipatruni (Kepler Computing Inc., USA)
• Dennis Meier (Norwegian University of Science and Technology, Norway)
• John Plombon (Intel Corporation, USA)
• Ramamoorthy Ramesh (University of California, Berkeley, USA)
• Alec Talin (Sandia National Laboratories, USA)
• Susan Trolier-McKinstry (The Pennsylvania State University, USA)
• Daniel Worledge (IBM T.J. Watson Research Center, USA)
• Shuolong Yang (The University of Chicago, USA)
• Pu Yu (Tsinghua University, China)

Symposium Organizers