Call for Papers

Please contact the symposium organizers with questions.

Research in wide and ultra-wide-bandgap (WBG/UWBG) semiconductor materials and devices continues to progress rapidly. Materials beyond silicon carbide and gallium nitride, such as gallium oxide, diamond, cubic boron nitride, aluminum nitride, and others, are at the frontier of semiconductor materials research and device physics. While such materials hold great promise for applications such as ultraviolet optoelectronic emitters and detectors, more compact and efficient energy converters, higher power high-frequency amplifiers, and quantum information science, many materials and processing challenges must still be addressed before UWBG semiconductors mature and can have significant impact. For example, many of the fundamental properties of these emerging materials are still poorly understood, including the physics of high-energy carrier scattering and transport responsible for electrical breakdown. Practical challenges such as efficient and controllable n- and p-type doping, synthesis of large area, low-defect-density substrates, the formation of reliable, low-resistance electrical contacts, and the integration of dielectric films with high quality interfaces are also areas that need to be further advanced before delivery of mature, viable, and cost competitive UWBG technologies can occur. This symposium will address a comprehensive set of topics related to the materials science, device physics, and processing of ultra-wide-bandgap materials, with a view towards the applications that are driving research in the field. The concept of co-design, whereby research topics such as those described above as well as their potential impact on applications are considered concurrently, is anticipated to be a theme of the symposium. Topics of current interest in the more traditional wide-bandgap materials will also be considered for this symposium.

Topics will include:

• Defects and Doping
• First-principles theory
• Electronic transport and carrier dynamics
• Advanced materials characterization and techniques
• Heterointergration approaches
• WBG/UWBG electronic and optoelectronic devices
• Materials and device processing
• Ultraviolet emitters and detectors
• Thermal properties and electro-thermal co-design
• Color centers for quantum technologies

Invited Speakers (tentative):

• Elaheh Ahmadi (University of Michigan, USA)
• Fikadu Alema (Agnitron Technology, USA)
• Patrick Fiorenza (Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche, Italy)
• Steve Goodnick (Arizona State University, USA)
• Mark Goorsky (University of California, Los Angeles, USA)
• Asa Haglund (Chalmers University of Technology, Sweden)
• Jennifer Hite (U.S. Naval Research Laboratory, USA)
• Ahmad Islam (Air Force Research Laboratory, USA)
• Motoaki Iwaya (Meijo University, Japan)
• Breanna Klein (Sandia National Laboratories, USA)
• Akito Kuramata (Novel Crystal Technology, Inc., Japan)
• Jingyu Lin (Texas Tech University, USA)
• Nadeemullah Mahadik (U.S. Naval Research Laboratory, USA)
• Baishakhi Mazumder (University at Buffalo, The State University of New York, USA)
• Matthew McCluskey (Washington State University, USA)
• Farid Medjdoub (Institut d'électronique de microélectronique et de nanotechnologie, France)
• Dallas Morisette (Purdue University, USA)
• Digbijoy Nath (Indian Institute of Science, India)
• Spyridon Pavlidis (North Carolina State University, USA)
• Lorenzo Rigutti (Universite de Rouen, France)
• Kornelius Tetzner (Ferdinand Braun Institut Berlin, Germany)
• Filip Tuomisto (University of Helsinki, Finland)
• Joel Varley (Lawrence Livermore National Laboratory, USA)
• Tim Wernicke (Technische Universität Berlin, Germany)
• Man Hoi Wong (Hong Kong University of Science and Technology, China)
• Yuhao Zhang (Virginia Tech, USA)

Symposium Organizers