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Symposium EL05-Two-Dimensional (2D) Materials and Heterostructures—Large-Scale Growth and Device Integration

Due to their structural and physical properties, such as high inherent mobility, scalability, and superior electrostatic control, two-dimensional (2D) semiconductors and ultrathin materials have demonstrated a significant promise to enhance cutting-edge transistor and memory technologies. Record-high mobility values have been consistently demonstrated with sub-nm body thicknesses, manifesting desirable properties in many high-density applications with augmented functionalities. To realize this potential, significant efforts have recently focused on the materials aspects for controlled synthesis of 2D materials and their device fabrication, including the channel material quality, contact resistance, and dielectric material performance. This symposium will bring together the leading experts from academia and industry to discuss the recent advancements in the integration of 2D semiconductors in high-performance electronics and optoelectronics, with a special emphasis on large-scale integration for both front-end-of-line (FEOL) and back-end-of-line (BEOL) applications.

The sessions will cover controlled low- and high-temperature synthesis of homogeneous 2D transition metal dichalcogenides (TMDs) at the wafer-scale including, but not limited to, (metalorganic) chemical vapor deposition and atomic layer deposition. Furthermore, the recent advancement in controlling the contact resistance at the metal-2D interface and formation of high-k dielectrics on the dangling bond-free 2D surface will be covered. New device designs integrating crystalline and polycrystalline 2D materials and their heterostructures for electronic and photonic device applications will be of interest as well as the advanced characterization methods focused on the structure-property correlation in 2D materials.

Topics will include:

  • Large-scale synthesis of 2D materials and their heterostructures
  • Back-end-of-line (BEOL) and front-end-of-line (FEOL) applications of 2D materials
  • Low-temperature synthesis of ultrathin materials
  • New device concepts based on 2D materials and ultrathin materials
  • Scalable device fabrication and heterogeneous integration
  • Contact engineering for 2D materials
  • Integration of high-k dielectrics
  • Controlled transfer methods for 2D materials
  • 2D device reliability and failure mechanisms
  • Industry-related adoption of 2D materials

Invited Speakers (tentative):

  • Kah Wee Ang (National University of Singapore, Singapore)
  • Yang Chai (The Hong Kong Polytechnic University, Hong Kong)
  • Manish Chhowalla (University of Cambridge, United Kingdom)
  • Chelsey Dorow (Intel Corporation, Belgium)
  • Xiangfeng Duan (University of California, Los Angeles, USA)
  • Ali Javey (University of California, Berkeley, USA)
  • Holger Kalisch (Aachen University, Germany)
  • Jeehwan  Kim (Massachusetts Institute of Technology, USA)
  • Andras Kis (École Polytechnique Fédérale de Lausanne, Switzerland)
  • Mario Lanza (King Abdullah University of Science and Technology, Saudi Arabia)
  • Sean Li (University of New South Wales, Australia)
  • Eric Pop (Stanford University, USA)
  • Joan Redwing (The Pennsylvania State University, USA)
  • Minsu Seol (Samsung Advanced Institute of Technology, Republic of Korea)
  • Hyeon-Suk Shin (Ulsan National Institute of Science and Technology, Republic of Korea)
  • Aaron Thean (National University of Singapore, Singapore)
  • Han Wang (University of Southern California, USA)

Symposium Organizers

Silvija Gradecak
National University of Singapore
No Phone for Symposium Organizer Provided , [email protected]

Lance Li
University of Hong Kong
Hong Kong
No Phone for Symposium Organizer Provided , [email protected]

Iuliana Radu
Taiwan Semiconductor Manufacturing Company Limited

John Sudijono
Applied Materials, Inc.
No Phone for Symposium Organizer Provided , [email protected]

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MRS publishes with Springer Nature

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