Call for Papers

Please contact the symposium organizers with questions.

Research in ultra-wide-bandgap (UWBG) semiconductor materials and devices continues to progress rapidly, providing new and exciting research opportunities for a wide range of electronic, optical, sensing and quantum applications. Materials with bandgaps exceeding that of GaN and SiC, such as GaO/AlGaO, diamond, c-BN and AlGaN are at the frontier of semiconductor materials research and device physics. Many of the fundamental properties of these emerging materials are still poorly understood; however, as an example, the physics of high-energy carrier scattering and transport processes responsible for electrical breakdown are largely unknown. Practical challenges such as efficient and controllable n-type and p-type doping, production of large area, low defect density substrates, the formation of reliable, low resistance electrical contacts and the integration of dielectric films with high quality interfaces are also yet to be sufficiently addressed to facilitate the delivery of mature, viable and cost competitive UWBG technologies. While such materials hold great promise for applications ranging from UV emitters/detectors, to more compact and efficient energy converters, to higher-power high-frequency amplifiers, to advances in quantum information science, many materials and processing challenges must be addressed before such UWBG semiconductors can reach maturity and have significant impact. This symposium will cover comprehensive topics related to the materials science, device physics, and processing of UWBG materials, with a perspective on the applications that are driving research in the field. Topics of current interest in the more traditional wide-bandgap materials will also be considered. In this symposium, we will arrange a special session focusing on vertical GaN power devices targeting high-voltage operation, in coordination with DOE’s Advanced Research Projects Agency, ARPA-E. Approaches to addressing specific challenges in GaN, such as the epitaxial growth of thick, low-doped drift layers and the realization of selective-area doping, will be covered.

Topics will include:

• Bulk crystals and substrates
• Epitaxial growth
• Theory and first principal calculations
• Defects science and doping
• Novel polarization effects and utilization in devices
• Device performance and reliability
• Low-dimensional structures
• Carrier recombination dynamics
• Gate and passivation dielectrics
• Thermal properties and thermal engineering
• Advanced materials characterization techniques
• Color centers for quantum technologies
• Ultraviolet light emitting diodes and detectors

Invited Speakers:

• Nasim Alem (The Pennsylvania State University, USA)
• Andrew Armstrong (Sandia National Laboratories, USA)
• Sukwon Choi (The Pennsylvania State University, USA)
• Srabanti Chowdhury (Stanford University, USA)
• Bruno Daudin (Commissariat à l’énergie atomique et aux énergies alternatives, France)
• Ken Haenen (Hasselt University, Belgium)
• Mutsuko Hatano (Tokyo Institute of Technology, Japan)
• Isik Kizilyalli (Advanced Research Projects Agency-Energy, USA)
• Satoshi Koizumi (National Institute for Materials Science, Japan)
• Martin Kuball (University of Bristol, United Kingdom)
• Maki Kushimoto (Nagoya University, Japan)
• Walter Lambrecht (Case Western Reserve University, USA)
• Jingyu Lin (Texas Tech University, USA)
• Robert Nemanich (Arizona State University, USA)
• Takeyoshi Onuma (Kogakuin University, Japan)
• Siddharth Rajan (The Ohio State University, USA)
• Steven Ringel (The Ohio State University, USA)
• Zlatko Sitar (North Carolina State University, USA)
• Tokuyuki Teraji (National Institute for Materials Science, Japan)
• Hitoshi Umezawa (National Institute of Advanced Industrial Science and Technology, Japan)
• Xinqiang Wang (Peking University, China)

Symposium Organizers