Research in ultra-wide-bandgap (UWBG) semiconductor materials and devices continues to progress rapidly. Materials beyond silicon carbide and gallium nitride, such as gallium oxide, diamond, cubic boron nitride, aluminum nitride, and others, are at the frontier of semiconductor materials research and device physics. While such materials hold great promise for applications such as ultraviolet optoelectronic emitters and detectors, more compact and efficient energy converters, higher power high-frequency amplifiers, and quantum information science, many materials and processing challenges must still be addressed before UWBG semiconductors mature and can have significant impact. For example, many of the fundamental properties of these emerging materials are still poorly understood, including the physics of high-energy carrier scattering and transport responsible for electrical breakdown. Practical challenges such as efficient and controllable n- and p-type doping, synthesis of large area, low-defect-density substrates, the formation of reliable, low resistance electrical contacts, and the integration of dielectric films with high quality interfaces are also areas that need to be further advanced before delivery of mature, viable, and cost competitive UWBG technologies can occur. This symposium will address a comprehensive set of topics related to the materials science, device physics, and processing of ultra-wide-bandgap materials, with a view towards the applications that are driving research in the field. Topics of current interest in the more traditional wide-bandgap materials will also be considered.
Sandia National Laboratories
Tokyo University of Agriculture and Technology
Division of Applied Chemistry
Université Grenoble Alpes