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Symposium EQ11-Materials, Processes and Device Structures Enabling Next-Generation High-Frequency Flexible Electronics

The vision of flexible electronics is to enable light-weight, cost-effective, power-efficient, and versatile electronic devices to become our daily companions – or in brief, electronics anywhere and anytime. However, despite significant progress in printing techniques, roll-to-roll fabrication, circuit design, and the development of new electronic materials, there is still a large gap between the performance of conventional silicon-based and flexible electronics. This gap is caused by various problems related to processing on flexible substrates, e.g., thermal, mechanical, and chemical stability of flexible substrates, deteriorated charge transport, increased alignment tolerances due to thermal expansion, and many more. In consequence, commercially attractive applications such as wireless communication with flexible sensor tags or high-resolution flexible displays are still a vision of the future. In order to tackle these problems, a joint approach combining material, process, and device development specifically for flexible substrates, is required. In particular, achieving transistors operating above 300 MHz, e.g., needed for medium-range wireless communication, necessitates an effective charge carrier mobility above 20 cm²/(Vs) for a channel length and overlap of electrodes of <1 µm at voltages lower than 5 V. These targets can only be reached if innovative semiconductor materials are combined with tailor-made integration processes and device architectures.

This symposium aims at bringing together researchers from different communities that are concerned with high-performance flexible transistors, printable functional materials, surface engineering, and processing on flexible substrates to elaborate on strategies for next-generation flexible electronic devices.

Topics will include:

  • Charge transport, injection, and doping in thin-film devices
  • Surface crystallization methods, e.g., meniscus-guided shear-coating
  • Interface engineering (Electrodes and dielectric interfaces)
  • Advanced thin-film transistor architectures
  • Characterization of flexible devices at Ultra-High-Frequencies
  • Heat management for high power devices on flexible substrates
  • High throughput processes for large-area manufacturing of high-frequency and ultra-high-frequency flexible electronics
  • Modeling of high-frequency flexible transistors

Invited Speakers:

  • Aram Amassian (North Carolina State University, USA)
  • Thomas Anthopoulos (King Abdullah University of Science and Technology, Saudi Arabia)
  • Annalisa Bonfiglio (Università di Cagliari, Italy)
  • Oana Jurchescu (Wake Forest University, USA)
  • Chang-Hyun Kim (Gachon University, Republic of Korea)
  • Masatoshi Kitamura (Kobe University, Japan)
  • Hagen Klauk (Max Planck Institute for Solid State Research, Germany)
  • Maria Antonietta Loi (University of Groningen, Netherlands)
  • Nico Münzenrieder (Free University of Bozen-Bolzano, Italy)
  • Kris Myny (imec, Belgium)
  • Thuc-Quyen Nguyen (University of California, Santa Barbara, USA)
  • Yong-Young Noh (Pohang University of Science and Technology, Republic of Korea)
  • Simon Ogier (Smartkem, United Kingdom)
  • Henning Sirringhaus (University of Cambridge, United Kingdom)
  • Barbara Stadllober (JOANNEUM RESEARCH Forschungsgesellschaft mbh, Austria)
  • Tse Nga Tg (University of California, San Diego, USA)
  • Shu-Jen Wang (Technische Universität Dresden, Germany)
  • Jana Zaumseil (Universität Heidelberg, Germany)

Symposium Organizers

Hans Kleemann
Technische Universität Dresden, IAPP

Mario Caironi
Istituto Italiano di Tecnologia
Center for Nano Science and Technology @PoliMi

Antonio Facchetti
Flexterra, Inc.

Jun Takeya
The University of Tokyo
Department of Advanced Materials Science

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MRS publishes with Springer Nature


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