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2014 MRS Spring Meeting Logo2014 MRS Spring Meeting & Exhibit

April 21-25, 2014 | San Francisco
Meeting Chairs: Jose A. Garrido, Sergei V. Kalinin, Edson R. Leite, David Parrillo, Molly Stevens


Symposium BB : Materials for End-of-Roadmap Devices in Logic, Power and Memory

2014-04-22   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Andrew C. Kummel, University of California, San Diego
Paul C. McIntyre, Stanford University
Masaaki Niwa, Tohoku University

Symposium Support

Picosun USA LLC
BB3: Resistive RAM I
Session Chairs
Gennadi Bersuker
Tuesday PM, April 22, 2014
Moscone West, Level 3, Room 3001

2:30 AM - BB3.01
Modeling Noise and Variability in Oxide-Based RRAM

Stefano Ambrogio 1 Simone Balatti 1 Antonio Cubeta 1 Daniele Ielmini 1

1Politecnico di Milano Milano Italy

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2:45 AM - BB3.02
HfO2 for Resistive Memory: From CBRAM to OxRAM

Cedric Mannequin 1 Christophe Vallee 1 Patrice Gonon 1 Mohamed Saadi 1 Laurence Latu-Romain 1 Helen Grampeix 2 Vincent Jousseaume 2

1UJF Grenoble France2CEA Grenoble France

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3:00 AM - *BB3.03
Intrinsic Variability of RRAM Devices

Gennadi Bersuker 1

1SEMATECH Albany USA

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3:30 AM - BB3.04
Comparison of Oxygen Vacancy Creation, Migration, Coalescent and Dispersion Energies for Different Metal Oxides for RRAM

Yuzheng Guo 1 John Robertson 1

1Cambridge University Cambridge United Kingdom

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3:45 AM - BB3.05
In-Situ TEM Biasing Investigation on Evolution of Wadsley Defects/Magneacute;li Phases during Resistive Switching Events in TiO2-Based RRAMs

Jonghan Kwon 1 Abhishek A. Sharma 2 James A. Bain 2 Yoosuf N. Picard 1 Marek Skowronski 1

1Carnegie Mellon University Pittsburgh USA2Carnegie Mellon University Pittsburgh USA

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4:00 AM - BB3
BREAK

4:30 AM - BB3.06
Enhancing the Performance of Metal/Insulator/Insulator/Metal (MIIM) Diodes

John F. Conley 1 Nasir Alimardani 1 Benjamin L. French 2 Sean W. King 3

1Oregon State University Corvallis USA2Intel Corp. Chandler USA3Intel Corp. Hillsboro USA

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4:45 AM - BB3.07
Resolving Voltage-Time Dilemma Using an Atomic Lever of Sub-Picosecond Electron-Phonon Interaction

Xiang Yang 1 Ioan Tudosa 1 I-Wei Chen 1

1University of Pennsylvania Philadelphia USA

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5:00 AM - *BB3.08
Challenges and Materials Solutions for Memristive Devices (ReRAM)

J. Joshua Yang 1

1Hewlett Packard Laboratories Palo Alto USA

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5:30 AM - BB3.09
Electroforming of Resistively Switching Fe:STO Samples Made Visible by Electrocoloration Observed by High Resolution Optical Microscopy

Viktor Havel 1 3 Astrid Marchewka 1 3 Stephan Menzel 2 3 Rainer Waser 1 2 3

1RWTH Aachen Aachen Germany2Forschungszentrum Jamp;#252;lich GmbH Jamp;#252;lich Germany3JARA - Fundamentals of Future Information Technology Aachen / Jamp;#252;lich Germany

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5:45 AM - BB3.10
Materials Challenges in NEMS Logic: Failure Mechanisms and Novel Materials Solutions

Robert W. Carpick 1 Frank Streller 1 Graham E. Wabiszewski 1 Filippo Mangolini 1 Gang Feng 2 Gianluca Piazza 3

1University of Pennsylvania Philadelphia USA2Villanova University Villanova USA3Carnegie Mellon University Pittsburgh USA

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BB1: III-V Semiconductors I
Session Chairs
Andrew C. Kummel
John Robertson
Tuesday AM, April 22, 2014
Moscone West, Level 3, Room 3001

9:00 AM - BB1.01
Al2O3/InGaAs Interface and Bulk Oxide Defect Passivation

Kechao Tang 1 Jaesoo Ahn 1 Tyler Kent 2 Evgueni Chagarov 2 Ravi Droopad 3 Andrew C Kummel 2 Paul C McIntyre 1

1Stanford University Stanford USA2University of California, San Diego La Jolla USA3Texas State University San Marcos USA

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9:15 AM - BB1.02
Self-Limiting and Saturating CVD of a Silicon Seed Layer on InGaAs(001)-(2x4)

Mary Edmonds 1 Tyler Kent 1 Ravi Droopad 3 Evgueni Chagarov 2 Andrew Kummel 2

1University of California, San Diego La Jolla USA2University of California, San Diego La Jolla USA3Texas State University San Marcos USA

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9:30 AM - BB1.03
In, Al, Ga, As Compounds Grown by MOCVD for MOSFET Channel on Blanket and Patterned 300 mm Si (100) Substrates Exhibiting Room Temperature Photoluminescence

Thierry Baron 1 Romain Cipro 1 Mickael Martin 1 Franck Bassani 1 S. Arnaud 1 S. David 1 Viktoria Gorbenko 1 2 Jean-Paul Barnes 2 Yann Bogumilowicz 2 Patrice Gergaud 2 Nevine Rochas 2 Virginie Loup 2 Christian Vizioz 2 Karim Yckache 2 Nicolas Chauvin 3 Xin Yu Bao 4 Zhiyuan Ye 4 David Carlson 4 Jean-Baptiste Pin 4 Errol Sanchez 4

1CNRS-LTM Grenoble France2CEA Grenoble France3Universitamp;#233; de Lyon Villeurbanne France4AMAT Santa Clara USA

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9:45 AM - BB1.04
Passivation of III-V Oxide Interfaces with Nitrogen

Yuzheng Guo 1 John Robertson 1

1Cambridge University Cambridge United Kingdom

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10:00 AM - *BB1.05
CMOS Scaling Beyond the Si Roadmap

Marc Heyns 1 2

1IMEC Leuven Belgium2KULeuven - MTM Leuven Belgium

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10:30 AM - *BB1.06
ALD of Epitaxial Oxides on III-V Semiconductors for MOSFETs

Roy G. Gordon 1 2 Xinwei Wang 1 3 Xiabing Lou 1 Ling Dong 4 Peide D. Ye 4

1Harvard University Cambridge USA2Harvard University Cambridge USA3Peking University Shenzhen Graduate School Shenzhen China4Purdue University West Lafayette USA

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11:00 AM - BB1
BREAK

BB2: Ge Based Channels
Session Chairs
Paul C. McIntyre
Tuesday AM, April 22, 2014
Moscone West, Level 3, Room 3001

11:30 AM - BB2.01
Effect of In-Situ Boron Doping in Germanium Source Regions on Performance of Germanium/Strained-Silicon-on-Insulator Tunnel Field-Effect Transistors

Minsoo Kim 1 Yuki Wakabayashi 1 Ryosho Nakane 1 Masafumi Yokoyama 1 Mitsuru Takenaka 1 Shinichi Takagi 1

1The University of Tokyo Tokyo Japan

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11:45 AM - BB2.02
Fabrication and Demonstration of High Performance Tensile-Strained GeOI nMOSFETs

Tatsuro Maeda 1 Yuuichi Kamimuta 1 Yoshihiko Moriyama 1 Eiko Mieda 1 Wipakorn Jevasuwan 1 Yuichi Kurashima 2 Hideki Takagi 2 Minoru Oda 1 Toshifumi Irisawa 1 Keiji Ikeda 1 Etsuo Kurosawa 1 Tsutomu Tezuka 1

1AIST Tsukuba Japan2AIST Tsukuba Japan

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12:00 PM - *BB2.03
Retarded Oxidation Rate of Ge in High-Pressure O2

Akira Toriumi 1 2 Choong-hyun Lee 1 2 Tomonori Nishimura 1 2

1The University of Tokyo Tokyo Japan2JST-CREST Tokyo Japan

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12:30 PM - *BB2.04
Defects at the Ge/Oxide Interface: Properties and Passivation

Marco Fanciulli 1 2 Stefano Paleari 1 Alessandro Molle 2 Federico Accetta 1 Abdelmadjid Mesli 3

1University of Milano Bicocca Milano Italy2CNR Agrate Brianza Italy3Universitamp;#233; Paul Camp;#233;zanne Marseille France

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2014-04-23   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Andrew C. Kummel, University of California, San Diego
Paul C. McIntyre, Stanford University
Masaaki Niwa, Tohoku University

Symposium Support

Picosun USA LLC
BB6: III-V Semiconductors III
Session Chairs
Andrew C. Kummel
Wednesday PM, April 23, 2014
Moscone West, Level 3, Room 3001

2:30 AM - BB6.01
Synchrotron Texture Analysis on Ultrathin Ni-Based Germanosilicide in Bottom of Trenches: Application to pMOS 14nm UTBB SOI

Emilie Bourjot 1 2 3 Tra Nguyen Thanh 3 4 Nathalie Boudet 4 Patrice Gergaud 3 Yves Morand 1 Jean-Michel Hartmann 3 Christian Vizioz 3 Jonathan Pradelles 3 Fabrice Nemouchi 3 Magali Gregoire 1 Dominique Mangelinck 2

1ST-Microelectronics Crolles France2CNRS-Aix Marseille University Marseille France3CEA-Leti Grenoble France4CRG-D2AM, ESRF amp; Inst. Namp;#233;el Grenoble France

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2:45 AM - *BB6.02
Disorder Induced Gap States at the High-k/III-V Interface

Eric M Vogel 1

1Georgia Institute of Technology Atlanta USA

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3:15 AM - *BB6.03
III-V MOS: Planar and Fin Technologies

Mark Rodwell 1 Sanghoon Lee 1 Cheng-Ying Huang 1 Doron Elias 1 Varista Chobpattana 2 Stephan Kraemer 2 Brian Thibeault 1 William Mitchell 1 Susanne Stemmer 2 Arthur C. Gossard 2 Stacia Keller 2 Paul McIntyre 4 Andrew Kummel 3

1UCSB Santa Barbara USA2UCSB Santa Barbara USA3UCSD San Diego USA4Stanford University Stanford USA

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3:45 AM - BB6.04
InGaAs 4D MOSFETs with Ultrathin Gate-All-Around Channels

Mengwei Si 1 Xiabing Lou 2 Roy G. Gordon 2 Peide D. Ye 1

1Purdue University West Lafayette USA2Harvard University Cambridge USA

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4:00 AM - BB6
BREAK

BB7: Advanced Devices
Session Chairs
Massimo Fischetti
Wednesday PM, April 23, 2014
Moscone West, Level 3, Room 3001

4:30 AM - *BB7.01
2D Materials: Characterization and Device Application

Randall Feenstra 1

1Carnegie Mellon University Pittsburgh USA

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5:00 AM - BB7.02
Transistors without Semiconductors: Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots

Chee Huei Lee 1 Shengyong Qin 2 Madhusudan A Savaikar 1 Jiesheng Wang 1 Boyi Hao 1 Dongyan Zhang 1 Douglas Banyai 1 John A Jaszczak 1 Kendal W Clark 2 Juan-Carlos Idrobo 3 An-Ping Li 2 Yoke Khin Yap 1

1Michigan Technological University Houghton USA2Oak Ridge National Laboratory Oak Ridge USA3Oak Ridge National Laboratory Oak Ridge USA

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5:15 AM - *BB7.03
Negative Capacitance Transistors

Sayeef Salahuddin 1

1University of California Berkeley Berkeley USA

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5:45 AM - BB7.04
Ultra-Low-Energy Straintronics Using Multiferroic Composites

Kuntal Roy 1

1Purdue University West Lafayette USA

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BB4: Nitride Semiconductors
Session Chairs
Robert Nemanich
Wednesday AM, April 23, 2014
Moscone West, Level 3, Room 3001

9:00 AM - BB4.01
Improved Performance of AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) Grown on Si Substrate with Si and Mg Pair-Doped Interlayers

Yiqiang Ni 1 Zhiyuan He 1 Deqiu Zhou 1 Shuo Wang 1 Jincheng Zhang 1 Fan Yang 1 Yao Yao 1 Zhen Shen 1 Peng Xiang 1 Zhisheng Wu 1 Baijun Zhang 1 Yang Liu 1

1Sun Yat-Sen University Guangzhou China

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9:15 AM - BB4.02
Growth Comparison Study of High-k Dielectric/GaN Using Atom Probe

Baishakhi Mazumder 1 X. Liu 2 U. K Mishra 2 J. S Speck 1

1University of California Santa Barbara USA2University of California Santa Barbara USA

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9:30 AM - BB4.03
Hydrogen Annealing and TiO2/Al2O3 Bilayer Dielectric Structure Effects on GaN-Based MOS Device Characteristics

Muhammad Adi Negara 1 Rathnait D Long 1 Dmitry M Zhernokletov 1 Omair I Saadat 2 Christine M Jackson 3 Aaron R Arehart 3 Steven A Ringel 3 Tomas Palacios 2 Paul C McIntyre 1

1Stanford University Stanford USA2Massachusetts Institute of Technology Cambridge USA3The Ohio State University Columbus USA

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9:45 AM - *BB4.04
MOCVD Grown Oxide for GaN MOSCAPs and Devices: An Oxidental Benefit?

Xiang Liu 1 Ramya Yeluri 1 Jeonghee Kim 1 Silvia Chan 1 Jing Lu 1 Matt Laurent 1 Stacia Keller 1 Umesh K Mishra 1

1University of California Santa Barbara USA

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10:15 AM - BB4.05
Materials Issues for the Development of Scaled 3D Nanowire Transistors

Guilhem Larrieu 1 Xiang-Lei Han 2 Youssouf Guerfi 1 Christophe Krzeminski 2

1LAAS CNRS Toulouse France2IEMN CNRS Villeneuve d'Ascq France

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10:30 AM - BB4
BREAK

BB5: III-V and Ge Semiconductors II
Session Chairs
Masaaki Niwa
Marc Heyns
Wednesday AM, April 23, 2014
Moscone West, Level 3, Room 3001

11:00 AM - BB5.01
A Combined Study of the Metal/Al2O3/InGaAs MOS System Using Capacitance-Voltage Characterization and Hard X-Ray Photoelectron Spectroscopy

Jun Lin 1 Lee A. Walsh 2 Greg J. Hughes 2 Joseph C. Woicik 3 Paul K. Hurley 1

1Tyndall National Institute Cork Ireland2Dublin City University Dublin Ireland3National Institute of Standards and Technology Gaithersburg USA

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11:15 AM - BB5.02
Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53Ga0.47As/Al2O3/HfO2 Stack

John D'Amico 1 Alexandre Savtchouk 1 Marshall Wilson 1 Jacek Lagowski 1 Wei-E Wang 2 Taewoo Kim 2 Gennadi Bersuker 2 Dmitry Veksler 2 Donghyi Koh 2

1Semilab SDI LLC Tampa USA2SEMATECH Albany USA

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11:30 AM - *BB5.03
The Characteristic Behaviour of Capacitance and Conductance for the InGaAs MOS System in Inversion

Paul Hurley 1 Scott Monaghan 1 Eamon O'Connor 1 Eimear Ryan 1 Brendan Sheehan 1 Liam Floyd 1 Jun Lin 1 Karim Cherkaoui 1 Rafael Rios 2 Fahmida Ferdousi 2 Kelin Kuhn 2

1Tyndall-UCC Cork Ireland2INTEL Portland USA

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12:00 PM - *BB5.04
Pseudopotential-Based Study of Electron Transport in Low-Dimensionality Nanostructures

Massimo V Fischetti 1 Shela J Aboud 2 William G Vandenberghe 1 Zhun-Yong Ong 1 Jiseok Kim 1 Sudarshan Narayanan 1 Bo Fu 1 Catherine Sachs 1

1The University of Texas at Dallas Richardson USA2Stanford University Stanford USA

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12:30 PM - BB5.05
A Hybrid Functional View of Hydrogen in Functional Oxides

Huanglong Li 1 John Robertson 1

1University of Cambridge Cambridge United Kingdom

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12:45 PM - BB5.06
Hydrogen Incorporation in GeO2/Ge Structures

Nicolau Molina Bom 3 Samuel Hartmann 1 Gabriel Vieira Soares 2 Claudio Radtke 1

1UFRGS Porto Alegre Brazil2UFRGS Porto Alegre Brazil3UFRGS Porto Alegre Brazil

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2014-04-24   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Andrew C. Kummel, University of California, San Diego
Paul C. McIntyre, Stanford University
Masaaki Niwa, Tohoku University

Symposium Support

Picosun USA LLC
BB10: Resistive RAM II
Session Chairs
Christophe Vallee
John Conley
Thursday PM, April 24, 2014
Moscone West, Level 3, Room 3001

2:30 AM - BB10.01
Resistive Switching Kinetics in SrTiO3-SrFeO3 Oxide-Based Memristors

Jennifer L.M. Rupp 1 Felix Messerschmitt 1 Sebastian Schweiger 1 Markus Kubicek 1 Yanuo Shi 1

1Electrochemical Materials, ETH Zurich Zurich Switzerland

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2:45 AM - *BB10.02
Metal-Oxide-Based Resistive Switching Memory (RRAM): Modeling, Scaling, and 3D Integration

Shimeng Yu 1 2 Yi Wu 1 Hong-Yu Chen 1 Zizhen Jiang 1 Joon Sohn 1 H.-S. Philip Wong 1

1Stanford University Stnaford USA2Arizona State University Tempe USA

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3:15 AM - BB10.03
Stress-Induced Switching in Conductive-Bridge RAM

Stefano Ambrogio 1 Simone Balatti 1 Seol Choi 1 Daniele Ielmini 1

1Politecnico di Milano Milano Italy

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3:30 AM - BB10.04
Nonvolatile Memories Based on AlOx Embedded ZrHfO High-k Gate Dielectric

Shumao Zhang 1 Yue Kuo 1 Xi Liu 2 1 Chi-Chou Lin 1

1Texas Aamp;M University College Station USA2Ohio University Athens USA

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3:45 AM - BB10.05
Tuning of Metal-Insulator Transition in NbO2 Thin Films by Doping for Selection Devices in 3D ReRAM

Minkook Kang 1 Sangbae Yu 1 Junwoo Son 1

1POSTECH Pohang Republic of Korea

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4:00 AM - BB10
BREAK

4:30 AM - BB10.06
Memristive Switching Mechanism in Polycrystalline ZnO

Yevgeniy Puzyrev 1 Xiao Shen 1 Sokrates Pantelides 1 2 3

1Vanderbilt University Nashville USA2Vanderbilt University Nashville USA3Oak Ridge National Laboratory Oak Ridge USA

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4:45 AM - BB10.07
The Influence of Water on Memory Characteristics of Transition-Metal-Oxide Resistive Random Access Memory

Ryosuke Ogata 1 Masataka Yoshihara 1 Naohiro Murayama 1 Satoru Kishida 1 2 Kentaro Kinoshita 1 2

1Tottori University Tottori Japan2Tottori Univ. Electronic Display Research Center Tottori Japan

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