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2015 MRS Spring Meeting Logo2015 MRS Spring Meeting & Exhibit

April 6-10, 2015 | San Francisco
Meeting Chairs: Artur Braun, Hongyou Fan, Ken Haenen, Lia Stanciu, Jeremy A. Theil



Symposium AA : Materials for Beyond the Roadmap Devices in Logic, Power and Memory

2015-04-07   Show All Abstracts

Symposium Organizers

Martin Frank, IBM T.J. Watson Research Center
Hyunsang Hwang, Pohang University of Science and Technology
Paul McIntyre, Stanford University
John Robertson, Cambridge University

Symposium Support

Air Liquide
Applied Materials, Inc.
IBM
Lam Research Corporation
ULVAC Technologies, Inc.
AA2: GaN-Based Devices
Session Chairs
Paul McIntyre
Andrew Kummel
Tuesday PM, April 07, 2015
Moscone West, Level 2, Room 2005

2:30 AM - AA2.01
A Comparative Study of Al2O3, HfO2 and AlN on AlGaN/GaN HEMT Heterostructures

Xiaoye Qin 1 Angelica Azcatl 1 Hui Zhu 1 Robert M. Wallace 1

1The University of Texas at Dallas Richardson United States

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2:45 AM - AA2.02
Oxide Charge Engineering Approaches to Produce Enhanced Mode Al2O3/GaN Device Operation

Muhammad Adi Negara 1 Rathnait Long 1 Dmitry Zhernokletov 1 Baylor Triplett 1 Paul C. McIntyre 1

1Stanford University Stanford United States

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3:00 AM - *AA2.03
The PowerGaN Project - Materials and Devices

Iain Thayne 1

1University of Glasgow Glasgow United Kingdom

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3:30 AM - AA2.04
Band Offset Engineering of Polar Oxide Wide Band Gap Semiconductors Interfaces

Vlado Lazarov 1 2 Phil J Hasnip 1 Martin Stankovski 1 Katherine Zeimer 2

1University of York York United Kingdom2Northeastern University Boston United States

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3:45 AM - AA2.05
Electronic States of Plasma-Enhanced Atomic Layer Deposited SiO2 on GaN

Brianna Eller 1 Jialing Yang 1 Robert J. Nemanich 1

1Arizona State University Tempe United States

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4:00 AM - AA2
BREAK

4:30 AM - AA2.06
Pyroelectric Control of Rashba Spin-Split States and Spin-Relaxation Times of a GaN/InN/GaN Quantum Spin Hall Transistor

Parijat Sengupta 1

1University of Wisconsin Madison Madison United States

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AA3: Transition Metal Dichalcogenides I
Session Chairs
Paul McIntyre
Iain Thayne
Tuesday PM, April 07, 2015
Moscone West, Level 2, Room 2005

4:45 AM - *AA3.01
Contact Engineering, Chemical Doping and Heterostructures of Layered Chalcogenides

Ali Javey 1

1UC Berkeley Berkeley United States

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5:15 AM - AA3.02
Analysis of Schottky Barriers, Contacts and Doping Properties of MoS2 and Other Transition Metal Dichalcogenides

Yuzheng Guo 1 John Robertson 1

1University of Cambridge Cambridge United Kingdom

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5:30 AM - AA3.03
The Doping Effect on Electronic Structure of MoS2: From Monolayer to Few-Layer

Chenxi Zhang 3 Cheng Gong 1 Weihua Wang 2 Bin Shan 4 Robert M. Wallace 3 Kyeongjae Cho 3

1UC Berkeley Richardson United States2Univ of Texas-Dallas Richardson United States3University of Texas at Dallas Richardson United States4HuaZhong University of Science and Technology Wuhan China

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5:45 AM - AA3.04
Structural Semiconducting-to-Metallic Phase Transition in Monolayer Transition Metal Dichalcogenides Induced by Electrostatic Gating

Yao Li 1 Karel-Alexander Duerloo 1 Kerry Wauson 2 Evan J. Reed 1

1Stanford University Stanford United States2New Mexico State University Las Cruces United States

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AA1: III-V Channels
Session Chairs
Paul McIntyre
Peide Ye
Tuesday AM, April 07, 2015
Moscone West, Level 2, Room 2005

9:00 AM - AA1.01
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects

Shun Sasaki 1 2 Shailesh Madisetti 1 Vadim Tokranov 1 Michael Yakimov 1 Makoto Hirayama 1 Steven Bentley 3 Ajey P Jacob 3 Serge Oktyabrsky 1

1SUNY College of Nanoscale Science and Engineering Albany United States2SUMCO Corporation Tokyo Japan3Globalfoundries at Albany NanoTech Albany United States

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AA4: Poster Session
Session Chairs
Martin Frank
Hyunsang Hwang
Tuesday PM, April 07, 2015
Marriott Marquis, Yerba Buena Level, Salon 7/8/9

9:00 AM - AA4.01
Investigation of Ferroelectric Polymer Langmuir Film Properties

Timothy J Reece 1 Wyatt Behn 1

1University of Nebraska at Kearney Kearney United States

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9:00 AM - AA4.02
Effects of Heavy in-situ Phosphorus Doping on Si by Using Ultra-High Vacuum Chemical Vapor Deposition

Minhyeong Lee 1 Sangmo Koo 1 Eunjung Ko 1 Hyunchul Jang 1 Dae-Hong Ko 1

1Yonsei University Seoul Korea (the Republic of)

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9:00 AM - AA4.03
Computational Aspects of Molecular Spintronics

Mariana Hildebrand 1 Ariadna Blanca Romero 1 Michael Inkpen 1 Tim Albrecht 1 Nicholas Harrison 1

1Imperial College London United Kingdom

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9:00 AM - AA4.04
Understanding Selectivity on Germanium/SiO2 Chemical Mechanical Planarization through Design of Experiments

Ayse Karagoz 2 James Mal 3 Bahar G. Basim 1

1Ozyegin Univ Istanbul Turkey2Ozyegin University Istanbul Turkey3Oregon State University Corvallis United States

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9:00 AM - AA4.05
CMOS-Compatible Polymer-Based Memory Structures on Copper Substrates

Ehsan Tahmasebian 1 Onkar Singh 2 Michael Freund 2 Peter Gillingham 3

1University of Manitoba Winnipeg Canada2University of Manitoba Winnipeg Canada3Conversant Intellectual Property Management Ottawa Canada

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9:00 AM - AA4.06
Computational Investigation of the Phase Stability and the Electronic Properties of Gd-Doped HfO$_2$

Ligen Wang 1

1General Research Institute for Nonferrous Metals Beijing China

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9:00 AM - AA4.08
Highly Reduced Electroforming Voltage in Resistive Memories by Inserting Gold Nanoparticles Monolayer

Kai Qian 1 Pooi See Lee 1 Jiangxin Wang 1

1NTU Singapore Singapore Singapore

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9:00 AM - AA4.09
Analog Memristive and Memcapacitive Characteristics of Pt-Fe2O3 Core-Shell Nanoparticles Assembly on p+-Si Substrate

Young Jun Noh 1 Yoon-Jae Baek 1 Young Jin Choi 2 Chi Jung Kang 2 Hyun Ho Lee 3 Tae-Sik Yoon 1

1Myongji University Yongin-si Korea (the Republic of)2Myongji University Yongin-si Korea (the Republic of)3Myongji University Yongin-si Korea (the Republic of)

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9:00 AM - AA4.10
Perpendicular Magnetization Switching via Current induced Spin-Orbit Torques on Flexible Substrate

OukJae Lee 1 Long You 1 JaeWon Jang 1 Vivek Subramanian 1 Sayeef Salahuddin 1

1UC Berkeley Berkeley United States

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9:00 AM - AA4.11
Cleaning and ALD Nucleation on InN(0001) Surface

Sang Wook Park 1 2 Tobin Kaufman-Osborn 1 2 Kasra Sardashti 1 2 S.M. Moududul Islam 3 Debdeep Jena 3 Hyunwoong Kim 1 2 Andrew C. Kummel 1

1University of California San Diego La Jolla United States2University of California San Diego La Jolla United States3University of Notre Dame Notre Dame United States

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9:00 AM - AA4.12
P(VDF-TrFE)/PMMA Ferroelectric Films for Low Voltage Non-Volatile Polymer Memory Transistors

Deepa Singh 1 Deepak . 1 Ashish Garg 1

1Indian Institute of Technology Kanpur Kanpur India

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9:00 AM - AA4.13
Nano-Structured TiOx/TiO2 Layer Based Resistive Switching Memory Driven by Low Voltage using Rapid Thermal Annealing

Kwan-Jun Heo 1 Ju-Song Eom 1 Su Chang Yoo 1 Jae-Mun Oh 1 Byung-Do Yang 1 Sung-Jin Kim 1

1Chungbuk National University Cheongju Korea (the Republic of)

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9:00 AM - AA4.14
Synergistic High Charge-Storage Capacitance of Flexible Organic Flash Memory

Minji Kang 1 Dongyoon Khim 2 Won-Tae Park 2 Rira Kang 1 Jun-Seok Yeo 1 Sehyun Lee 1 Yen-Sook Jung 1 Dae-Hee Lim 1 Yong-Young Noh 2 Kang-Jun Baeg 3 Dong-Yu Kim 1

1Gwangju Institute of Science and Technology Gwangju Korea (the Republic of)2Dongguk University Seoul Korea (the Republic of)3Korea Electrotechnology Research Institute Changwon Korea (the Republic of)

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9:00 AM - AA4.15
Nonpolar Resistive Memory Switching in High-K Ternary Oxide Based Pt/LaHoO3/Pt Memory Devices

Yogesh Sharma 1 Shojan Pavunny 1 Ram S. Katiyar 1

1University of Puerto Rico San Juan United States

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9:00 AM - AA4.16
Improved Resistive Switching Performance in Rare-Earths (Sm, Gd)-Modified HfO2 Thin Films Fabricated Using Sequential Pulsed Laser Deposition Technique

Yogesh Sharma 1 Shojan Pavunny 1 Ram S. Katiyar 1

1University of Puerto Rico San Juan United States

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9:00 AM - AA4.17
Nano-Floating Gate Memory Devices Using 3D Multi-Stacking Arrays with Densely Packed Hydrophobic Metal Nanoparticles for Charge Trapping Layers

Ikjun Cho 1 Dongyeeb Shin 1 Jinhan Cho 1

1Korea University Seoul Korea (the Republic of)

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9:00 AM - AA4.18
Density-Functional Theory Molecular Dynamics Simulations of High-K Dielectrics on SiGe and GaN Substrates

Evgueni Chagarov 1 Andrew C. Kummel 2

1UCSD La Jolla United States2University of California-San Diego La Jolla United States

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9:00 AM - AA4.19
Comparative Study of Carbon Nanotube Vias for End-of-Roadmap Technology Nodes

Anshul A Vyas 1 Changjian Zhou 2 Yusuke Abe 3 Phillip Wang 4 Mansun Chan 2 Cary Y. Yang 1

1Santa Clara Univ Santa Clara United States2Hong Kong University of Science and Technology Kowloon Hong Kong3Hitachi High-Tech Ibaraki Japan4Applied Materials Santa Clara United States

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9:00 AM - AA4.20
Sputtering Deposition of Pt/Co/CoFeB/MgO Heterostructure for Tilted Perpendicular Anisotropy

Long You 1 OukJae Lee 1 Haron Abdel-Raziq 1 Sayeef Salahuddin 1

1University of California at Berkeley Berkeley United States

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9:00 AM - AA4.21
Oxygen-Driven Resistive Switching in Silicon-Rich Silica: The Physical Framework of Highly Efficient and Scalable Non-Volatile Memory

Mark Buckwell 1 Luca Montesi 1 Adnan Mehonic 1 Manveer Munde 1 Stephen Hudziak 1 Sarah Fearn 2 Richard Chater 2 David McPhail 2 Anthony Kenyon 1

1University College London London United Kingdom2Imperial College London London United Kingdom

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9:00 AM - AA4.22
MOCVD Epitaxy and Characterization of III-As and III-P Thin Layers on 300mm Silicon Substrate

Mickael Martin 1 Romain Cipro 1 Mathilde Billaud 1 Jeremy Moeyaert 1 Franck Bassani 1 Sandrine Arnaud 1 Sylvain David 1 Viktoriia Gorbenko 2 Jean-Paul Barnes 3 Herve Boutry 3 Julien Duvernay 3 Mikael Casse 3 Yann Bogumilowicz 3 Nevine Rochas 3 Nicolas Chauvin 4 Xinyu Bao 5 Zhiyuan Ye 5 Jean-Baptiste Pin 5 Errol Sanchez 5 Thierry Baron 1

1CNRS Grenoble France2CNRS-LTM Grenoble France3CEA-LETI Grenoble France4INL Lyon France5Applied Materials Santa Clara United States

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9:00 AM - AA4.24
Material Characterization of Tantalum Oxide Resistive Memory Devices for Radiation Resistant Non-Volatile Memory

Joshua Holt 2 Karsten Beckmann 1 Sarah Lombardo 2 Jean Yang-Scharlotta 3 Nathaniel Cady 2

1SUNY Polytechnic Institute Albany United States2SUNY Polytechnic Institute Albany United States3Jet Propulsion Laboratory Pasadena United States

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9:00 AM - AA4.25
Air Stability of Two-Dimensional Transition Metal Dichalcogenide Surfaces

Santosh KC 1 Rafik Addou 1 Diego Barrera 1 2 Roberto C. Longo 1 Julia W. P. Hsu 1 Robert M. Wallace 1 Kyeongjae Cho 1

1Univ of Texas-Dallas Richardson United States2Centro de Investigacioacute;n en Materiales Avanzados, S.C. (CIMAV) Unidad Monterrey Mexico

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9:00 AM - AA4
AA4.24 WITHDRAWN 3-11-15

Show Abstract

9:00 AM - AA4
AA4.07 WITHDRAWN 3-23-15

Show Abstract

AA1: III-V Channels
Session Chairs
Paul McIntyre
Peide Ye
Tuesday AM, April 07, 2015
Moscone West, Level 2, Room 2005

9:15 AM - AA1.02
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels

Renjie Chen 1 Shadi A. Dayeh 1

1University of California, San Diego La Jolla United States

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9:30 AM - *AA1.03
Low-Frequent Noise and RTN on Near-Ballistic III-V GAA Nanowire MOSFETs

Peide Ye 1

1Purdue University West Lafayette United States

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10:00 AM - *AA1.04
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors

Jesus A. del Alamo 1

1MIT Cambridge United States

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10:30 AM - AA1.05
Efficacy of Ge Passivation with Metal-Interlayer-Semiconductor Structure on III-V FET Source/Drain Contact Resistance Reduction

Kim Seung-Hwan 1 Jeong-Kyu Kim 1 Gwang-Sik Kim 1 Chang-Hwan Choi 2 Hyun-Yong Yu 1

1Korea University Seoul Korea (the Republic of)2Hanyang University Seoul Korea (the Republic of)

Show Abstract

10:45 AM - AA1.06
Low Leakage and Trap State Densities of Extremely High-K/InGaAs Gate Stacks

Varistha Chobpattana 1 Evgeny Mikheev 1 Jack Zhang 1 Thomas E. Mates 1 Susanne Stemmer 1

1University of California Santa Barbara United States

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11:00 AM - AA1
BREAK

11:30 AM - *AA1.07
Time-Resolved X-Ray Photoemission Spectroscopy of the III-V/Oxide Interface during the ALD Process

Rainer Timm 1

1Lund University Lund Sweden

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12:00 PM - AA1.08
Al Nitride for Improved Interface Passivation of III-V - Oxide Interfaces

Yuzheng Guo 1 John Robertson 1

1University of Cambridge Cambridge United Kingdom

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12:15 PM - AA1.09
Self-Limiting CVD and ALD of An Electrically Passivating Silicon Seed Layer on InGaAs(001)-(2x4)

Mary E. Edmonds 1 Tyler Kent 1 Mei Chang 2 Jessica Kachian 2 Ravi Droopad 3 Evgueni Chagarov 4 Andrew C. Kummel 4

1University of California, San Diego La Jolla United States2Applied Materials Sunnyvale United States3Texas State University San Marcos United States4University of California, San Diego La Jolla United States

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12:30 PM - AA1.10
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks

Kechao Tang 1 Muhammad Adi Negara 1 Ravi Droopad 2 Paul C. McIntyre 3

1Stanford University Stanford United States2Texas State Univ San Marcos United States3Stanford Univ Stanford United States

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12:45 PM - AA1.11
Physical Properties Investigation of Arsenic Based III-V Materials Grown on Nanopatterned Si(100) Substrates

Romain Cipro 1 Mickael Martin 2 Jeremy Moeyaert 1 Franck Bassani 2 Viktoriia Gorbenko 1 3 Sylvain David 1 Eddy Latu-Romain 1 Jean-Paul Barnes 3 Yann Bogumilowicz 3 Nevine Rochas 3 Virginie Loup 3 Christian Vizioz 3 Karim Yckache 3 Nicolas Chauvin 4 Xinyu Bao 5 Zhiyuan Ye 5 David Carlson 5 Jean-Baptiste Pin 5 Errol Sanchez 5 Thierry Baron 2

1CNRS-LTM Grenoble France2CNRS Grenoble France3CEA-LETI Grenoble France4INL Lyon France5Applied Materials Santa Clara United States

Show Abstract

2015-04-08   Show All Abstracts

Symposium Organizers

Martin Frank, IBM T.J. Watson Research Center
Hyunsang Hwang, Pohang University of Science and Technology
Paul McIntyre, Stanford University
John Robertson, Cambridge University

Symposium Support

Air Liquide
Applied Materials, Inc.
IBM
Lam Research Corporation
ULVAC Technologies, Inc.
AA6: Transition Metal Dichalcogenides II
Session Chairs
John Robertson
Robert Wallace
Wednesday PM, April 08, 2015
Moscone West, Level 2, Room 2005

2:30 AM - AA6.01
Reactivity of Transition Metal Dichalcogenide

Rafik Addou 1 Hui Zhu 1 Diego Barrera 2 4 Santosh KC 2 Jian Wang 2 Kyeongjae Cho 2 Julia W. P. Hsu 3 Robert M. Wallace 2

1UT Dallas Richardson United States2The University of Texas at Dallas Richardson United States3Univ of Texas-Dallas Richardson United States4Centro de Investigacion en Materiales Avanzados, S. C. (CIMAV) Apodaca Mexico

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2:45 AM - AA6.02
HfO2 on UV-O3 Exposed Transition Metal Dichalcogenides: Surface Functionalization and Implications

Angelica Azcatl 1 Santosh KC 1 Xin Peng 1 Ning Lu 1 Stephen McDonnell 1 Xiaoye Qin 1 Francis de Dios 1 Rafik Addou 1 Jiyoung Kim 1 Moon J. Kim 1 Kyeongjae Cho 1 Robert M. Wallace 1

1The University of Texas at Dallas Richardson United States

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3:00 AM - *AA6.03
WSe2 and WTe2 Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

Ruoyu Yue 2 Adam Barton 2 Hui Zhu 2 Ning Lu 2 Lanxia Cheng 2 Rafik Addou 2 Stephen McDonnell 2 Luigi Colombo 1 Jiyoung Kim 2 Moon J. Kim 2 Robert M. Wallace 2 Christopher L. Hinkle 2

1Texas Instruments Dallas United States2University of Texas at Dallas Richardson United States

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3:30 AM - *AA6.04
Surface and Interfaces for 2D Beyond CMOS Materials

Robert M. Wallace 1

1The University of Texas at Dallas Richardson United States

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4:00 AM - AA6
BREAK

AA7: Transition Metal Dichalcogenides and Oxides
Session Chairs
Alex Demkov
Andrew Kummel
Wednesday PM, April 08, 2015
Moscone West, Level 2, Room 2005

4:30 AM - *AA7.01
Self-Assembled Ordered Phthalocyanine Monolayers on 2D Semiconductors for Subnanometer Dielectrics ALD Nucleation

Jun Hong Park 4 3 Iljo Kwak 4 3 Pabitra Choudhury 2 Kasra Sardashti 4 3 Mary Edmonds 4 3 Steven Wolf 4 3 Tyler Kent 4 3 Hema Chandra Prakash Movva 5 Sanjay Banerjee 5 Susan Fullerton 1 Andrew C. Kummel 3

1Univ of Notre Dame Notre Dame United States2New Mexico Tech Socorro United States3University of California San Diego San Diego United States4University of California San Diego San Diego United States5University of Texas at Austin Austin United States

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5:00 AM - *AA7.02
Integrated Films of Transition Metal Oxides for Information Technology

Alex Demkov 1

1The University of Texas Austin United States

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5:30 AM - AA7.03
Extreme Doping in Correlated Oxides and Its Application to Synaptic Transistors

You Zhou 1 Jian Shi 1 2 Shriram Ramanathan 1

1Harvard University Cambridge United States2Rensselaer Polytechnic Institute Troy United States

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5:45 AM - AA7.04
ALD Dielectric Layers on Phosphorus Doped Diamond (100) Surfaces

Brianna S Eller 1 Franz A. Koeck 1 Robert J. Nemanich 1

1Arizona State University Tempe United States

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AA5: RRAM
Session Chairs
Sergiu Clima
Hyunsang Hwang
Wednesday AM, April 08, 2015
Moscone West, Level 2, Room 2005

9:00 AM - AA5.01
Volatile Resistance States for Non-Destructive Read Out and Selector Devices

Jan van den Hurk 2 Eike Linn 2 Rainer Waser 2 Ilia Valov 1

1Research Centre Juelich Juelich Germany2RWTH-Aachen University Aachen Germany

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9:15 AM - AA5.02
Characterization of Highly Resistive Nanoscale RRAM Contacts

Sanchit Deshmukh 1 Feng Xiong 1 Feifei Lian 1 Yi Cui 2 Eric Pop 1

1Stanford University Stanford United States2Stanford University Stanford United States

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9:30 AM - *AA5.03
Design and Optimization of Transition Metal Oxide-Based Resistive Switching Devices for Data Storage and Computing Systems

Jinfeng Kang 1 B. Gao 1 P. Huang 1 Z. Chen 1 Y.D. Zhao 1 C. Liu 1 H. T. Li 1 F. F. Zhang 1 L. F. Liu 1 X. Y. Liu 1

1Institute of Microelectronics, Peking University Beijing China

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10:00 AM - AA5.04
Materials Selection Criteria for Metal Oxide based Resistive Random Access Memories

Yuzheng Guo 2 John Robertson 1

1Cambridge University Cambridge United Kingdom2University of Cambridge Cambridge United Kingdom

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10:15 AM - AA5.05
Characterizing Switching Variability in TaOx Memristors with Varying Stoichiometry

David Hughart 1 Patrick Mickel 1 Roger Apodaca 1 Gad Haase 1 Matthew Marinella 1

1Sandia National Laboratories Albuquerque United States

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10:30 AM - *AA5.06
Crossbar Arrays for Non-von Neumann Computing

Geoffrey Burr 1 Robert M Shelby 1 Carmelo di Nolfo 1 Irem Boybat 1 Junwoo Jang 2 Kumar R. Virwani 1 Rohit S Shenoy 1 Pritish Narayanan 1 Emanuele U Giacometti 1 Buelent Kurdi 1 Hyunsang Hwang 2

1IBM Almaden Research Center San Jose United States2Pohang University of Science and Technology Pohang Korea (the Republic of)

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11:00 AM - AA5
BREAK

11:30 AM - *AA5.07
Designing the Ideal Transition-Metal-Oxide-Based RRAM Stack from First-Principles Thermodynamics and Defect Kinetics

Sergiu Clima 1 Yang Yin Chen 1 Andrea Fantini 1 Ludovic Goux 1 Bogdan Govoreanu 1 Robin Degraeve 1 Malgorzata Jurczak 1 Geoffrey Pourtois 1 2

1IMEC Leuven Belgium2University of Antwerp Antwerpen Belgium

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12:00 PM - AA5.08
Revealing Electrochemical Dynamics of Nanoscale Metallic Inclusions in Memristive Devices via In Situ TEM

Yuchao Yang 1 Peng Gao 2 Linze Li 2 Xiaoqing Pan 2 Stefan Tappertzhofen 3 Shinhyun Choi 1 Rainer Waser 3 4 Ilia Valov 3 4 Wei Lu 1

1University of Michigan, Ann Arbor Ann Arbor United States2University of Michigan, Ann Arbor Ann Arbor United States3RWTH Aachen University Aachen Germany4Research Centre Juuml;lich GmbH Juuml;lich Germany

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12:15 PM - AA5.09
SET and RESET Kinetics of SrTiO3-Based Resistive Memory Devices

Karsten Fleck 3 2 Ulrich Boettger 3 2 Rainer Waser 3 2 1 Stephan Menzel 1 2

1Forschungszentrum Juelich, Peter Gruuml;nberg Institute (PGI-7) Juelich Germany2JARA - Fundamentals of Future Information Technology Aachen Germany3RWTH Aachen University Aachen Germany

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12:30 PM - AA5.10
Kinetic Monte Carlo Simulation of Electrochemical Metallization Memory Cells

Stephan Menzel 1 Philip Kaupmann 2 Rainer Waser 2 1

1Forschungszentrum Juelich, Peter Gruuml;nberg Institute (PGI-7) Juelich Germany2RWTH Aachen Aachen Germany

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12:45 PM - AA5.11
From HfO2 Memory Resistors (RRAM) to Memory Impedance (MEM-Z) Devices

Christophe Vallee 1 Patrice Gonon 1 Cedric Mannequin 1 Tarik Wakrim 1 Mohamed Saadi 1 Alain Sylvestre 1

1Univ. Grenoble Alpes Grenoble France

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