Meetings & Events

 

2015 MRS Spring Meeting Logo2015 MRS Spring Meeting & Exhibit

April 6-10, 2015 | San Francisco
Meeting Chairs: Artur Braun, Hongyou Fan, Ken Haenen, Lia Stanciu, Jeremy A. Theil



Symposium AA : Materials for Beyond the Roadmap Devices in Logic, Power and Memory

2015-04-07   Show All Abstracts

Symposium Organizers

Martin Frank, IBM T.J. Watson Research Center
Hyunsang Hwang, Pohang University of Science and Technology
Paul McIntyre, Stanford University
John Robertson, Cambridge University

Symposium Support

Air Liquide
Applied Materials, Inc.
IBM
Lam Research Corporation
ULVAC Technologies, Inc.
AA2: GaN-Based Devices
Session Chairs
Paul McIntyre
Andrew Kummel
Tuesday PM, April 07, 2015
Moscone West, Level 2, Room 2005

2:30 AM - AA2.01
A Comparative Study of Al2O3, HfO2 and AlN on AlGaN/GaN HEMT Heterostructures

Xiaoye Qin 1 Angelica Azcatl 1 Hui Zhu 1 Robert M. Wallace 1

1The University of Texas at Dallas Richardson United States

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2:45 AM - AA2.02
Oxide Charge Engineering Approaches to Produce Enhanced Mode Al2O3/GaN Device Operation

Muhammad Adi Negara 1 Rathnait Long 1 Dmitry Zhernokletov 1 Baylor Triplett 1 Paul C. McIntyre 1

1Stanford University Stanford United States

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3:00 AM - *AA2.03
The PowerGaN Project - Materials and Devices

Iain Thayne 1

1University of Glasgow Glasgow United Kingdom

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3:30 AM - AA2.04
Band Offset Engineering of Polar Oxide Wide Band Gap Semiconductors Interfaces

Vlado Lazarov 1 2 Phil J Hasnip 1 Martin Stankovski 1 Katherine Zeimer 2

1University of York York United Kingdom2Northeastern University Boston United States

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3:45 AM - AA2.05
Electronic States of Plasma-Enhanced Atomic Layer Deposited SiO2 on GaN

Brianna Eller 1 Jialing Yang 1 Robert J. Nemanich 1

1Arizona State University Tempe United States

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4:00 AM -
BREAK

4:30 AM - AA2.06
Pyroelectric Control of Rashba Spin-Split States and Spin-Relaxation Times of a GaN/InN/GaN Quantum Spin Hall Transistor

Parijat Sengupta 1

1University of Wisconsin Madison Madison United States

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AA3: Transition Metal Dichalcogenides I
Session Chairs
Paul McIntyre
Iain Thayne
Tuesday PM, April 07, 2015
Moscone West, Level 2, Room 2005

4:45 AM - *AA3.01
Contact Engineering, Chemical Doping and Heterostructures of Layered Chalcogenides

Ali Javey 1

1UC Berkeley Berkeley United States

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5:15 AM - AA3.02
Analysis of Schottky Barriers, Contacts and Doping Properties of MoS2 and Other Transition Metal Dichalcogenides

Yuzheng Guo 1 John Robertson 1

1University of Cambridge Cambridge United Kingdom

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5:30 AM - AA3.03
The Doping Effect on Electronic Structure of MoS2: From Monolayer to Few-Layer

Chenxi Zhang 3 Cheng Gong 1 Weihua Wang 2 Bin Shan 4 Robert M. Wallace 3 Kyeongjae Cho 3

1UC Berkeley Richardson United States2Univ of Texas-Dallas Richardson United States3University of Texas at Dallas Richardson United States4HuaZhong University of Science and Technology Wuhan China

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5:45 AM - AA3.04
Structural Semiconducting-to-Metallic Phase Transition in Monolayer Transition Metal Dichalcogenides Induced by Electrostatic Gating

Yao Li 1 Karel-Alexander Duerloo 1 Kerry Wauson 2 Evan J. Reed 1

1Stanford University Stanford United States2New Mexico State University Las Cruces United States

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AA1: III-V Channels
Session Chairs
Paul McIntyre
Peide Ye
Tuesday AM, April 07, 2015
Moscone West, Level 2, Room 2005

9:00 AM - AA1.01
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects

Shun Sasaki 1 2 Shailesh Madisetti 1 Vadim Tokranov 1 Michael Yakimov 1 Makoto Hirayama 1 Steven Bentley 3 Ajey P Jacob 3 Serge Oktyabrsky 1

1SUNY College of Nanoscale Science and Engineering Albany United States2SUMCO Corporation Tokyo Japan3Globalfoundries at Albany NanoTech Albany United States

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AA4: Poster Session
Session Chairs
Martin Frank
Hyunsang Hwang
Tuesday PM, April 07, 2015
Marriott Marquis, Yerba Buena Level, Salon 7/8/9

9:00 AM - AA4.01
Investigation of Ferroelectric Polymer Langmuir Film Properties

Timothy J Reece 1 Wyatt Behn 1

1University of Nebraska at Kearney Kearney United States

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9:00 AM - AA4.02
Effects of Heavy in-situ Phosphorus Doping on Si by Using Ultra-High Vacuum Chemical Vapor Deposition

Minhyeong Lee 1 Sangmo Koo 1 Eunjung Ko 1 Hyunchul Jang 1 Dae-Hong Ko 1

1Yonsei University Seoul Korea (the Republic of)

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9:00 AM - AA4.03
Computational Aspects of Molecular Spintronics

Mariana Hildebrand 1 Ariadna Blanca Romero 1 Michael Inkpen 1 Tim Albrecht 1 Nicholas Harrison 1

1Imperial College London United Kingdom

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9:00 AM - AA4.04
Understanding Selectivity on Germanium/SiO2 Chemical Mechanical Planarization through Design of Experiments

Ayse Karagoz 2 James Mal 3 Bahar G. Basim 1

1Ozyegin Univ Istanbul Turkey2Ozyegin University Istanbul Turkey3Oregon State University Corvallis United States

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9:00 AM - AA4.05
CMOS-Compatible Polymer-Based Memory Structures on Copper Substrates

Ehsan Tahmasebian 1 Onkar Singh 2 Michael Freund 2 Peter Gillingham 3

1University of Manitoba Winnipeg Canada2University of Manitoba Winnipeg Canada3Conversant Intellectual Property Management Ottawa Canada

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9:00 AM - AA4.06
Computational Investigation of the Phase Stability and the Electronic Properties of Gd-Doped HfO$_2$

Ligen Wang 1

1General Research Institute for Nonferrous Metals Beijing China

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9:00 AM - AA4.08
Highly Reduced Electroforming Voltage in Resistive Memories by Inserting Gold Nanoparticles Monolayer

Kai Qian 1 Pooi See Lee 1 Jiangxin Wang 1

1NTU Singapore Singapore Singapore

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9:00 AM - AA4.09
Analog Memristive and Memcapacitive Characteristics of Pt-Fe2O3 Core-Shell Nanoparticles Assembly on p+-Si Substrate

Young Jun Noh 1 Yoon-Jae Baek 1 Young Jin Choi 2 Chi Jung Kang 2 Hyun Ho Lee 3 Tae-Sik Yoon 1

1Myongji University Yongin-si Korea (the Republic of)2Myongji University Yongin-si Korea (the Republic of)3Myongji University Yongin-si Korea (the Republic of)

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9:00 AM - AA4.10
Perpendicular Magnetization Switching via Current induced Spin-Orbit Torques on Flexible Substrate

OukJae Lee 1 Long You 1 JaeWon Jang 1 Vivek Subramanian 1 Sayeef Salahuddin 1

1UC Berkeley Berkeley United States

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9:00 AM - AA4.11
Cleaning and ALD Nucleation on InN(0001) Surface

Sang Wook Park 1 2 Tobin Kaufman-Osborn 1 2 Kasra Sardashti 1 2 S.M. Moududul Islam 3 Debdeep Jena 3 Hyunwoong Kim 1 2 Andrew C. Kummel 1

1University of California San Diego La Jolla United States2University of California San Diego La Jolla United States3University of Notre Dame Notre Dame United States

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9:00 AM - AA4.12
P(VDF-TrFE)/PMMA Ferroelectric Films for Low Voltage Non-Volatile Polymer Memory Transistors

Deepa Singh 1 Deepak . 1 Ashish Garg 1

1Indian Institute of Technology Kanpur Kanpur India

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9:00 AM - AA4.13
Nano-Structured TiOx/TiO2 Layer Based Resistive Switching Memory Driven by Low Voltage using Rapid Thermal Annealing

Kwan-Jun Heo 1 Ju-Song Eom 1 Su Chang Yoo 1 Jae-Mun Oh 1 Byung-Do Yang 1 Sung-Jin Kim 1

1Chungbuk National University Cheongju Korea (the Republic of)

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9:00 AM - AA4.14
Synergistic High Charge-Storage Capacitance of Flexible Organic Flash Memory

Minji Kang 1 Dongyoon Khim 2 Won-Tae Park 2 Rira Kang 1 Jun-Seok Yeo 1 Sehyun Lee 1 Yen-Sook Jung 1 Dae-Hee Lim 1 Yong-Young Noh 2 Kang-Jun Baeg 3 Dong-Yu Kim 1

1Gwangju Institute of Science and Technology Gwangju Korea (the Republic of)2Dongguk University Seoul Korea (the Republic of)3Korea Electrotechnology Research Institute Changwon Korea (the Republic of)

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9:00 AM - AA4.15
Nonpolar Resistive Memory Switching in High-K Ternary Oxide Based Pt/LaHoO3/Pt Memory Devices

Yogesh Sharma 1 Shojan Pavunny 1 Ram S. Katiyar 1

1University of Puerto Rico San Juan United States

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9:00 AM - AA4.16
Improved Resistive Switching Performance in Rare-Earths (Sm, Gd)-Modified HfO2 Thin Films Fabricated Using Sequential Pulsed Laser Deposition Technique

Yogesh Sharma 1 Shojan Pavunny 1 Ram S. Katiyar 1

1University of Puerto Rico San Juan United States

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9:00 AM - AA4.17
Nano-Floating Gate Memory Devices Using 3D Multi-Stacking Arrays with Densely Packed Hydrophobic Metal Nanoparticles for Charge Trapping Layers

Ikjun Cho 1 Dongyeeb Shin 1 Jinhan Cho 1

1Korea University Seoul Korea (the Republic of)

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9:00 AM - AA4.18
Density-Functional Theory Molecular Dynamics Simulations of High-K Dielectrics on SiGe and GaN Substrates

Evgueni Chagarov 1 Andrew C. Kummel 2

1UCSD La Jolla United States2University of California-San Diego La Jolla United States

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9:00 AM - AA4.19
Comparative Study of Carbon Nanotube Vias for End-of-Roadmap Technology Nodes

Anshul A Vyas 1 Changjian Zhou 2 Yusuke Abe 3 Phillip Wang 4 Mansun Chan 2 Cary Y. Yang 1

1Santa Clara Univ Santa Clara United States2Hong Kong University of Science and Technology Kowloon Hong Kong3Hitachi High-Tech Ibaraki Japan4Applied Materials Santa Clara United States

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9:00 AM - AA4.20
Sputtering Deposition of Pt/Co/CoFeB/MgO Heterostructure for Tilted Perpendicular Anisotropy

Long You 1 OukJae Lee 1 Haron Abdel-Raziq 1 Sayeef Salahuddin 1

1University of California at Berkeley Berkeley United States

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9:00 AM - AA4.21
Oxygen-Driven Resistive Switching in Silicon-Rich Silica: The Physical Framework of Highly Efficient and Scalable Non-Volatile Memory

Mark Buckwell 1 Luca Montesi 1 Adnan Mehonic 1 Manveer Munde 1 Stephen Hudziak 1 Sarah Fearn 2 Richard Chater 2 David McPhail 2 Anthony Kenyon 1

1University College London London United Kingdom2Imperial College London London United Kingdom

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9:00 AM - AA4.22
MOCVD Epitaxy and Characterization of III-As and III-P Thin Layers on 300mm Silicon Substrate

Mickael Martin 1 Romain Cipro 1 Mathilde Billaud 1 Jeremy Moeyaert 1 Franck Bassani 1 Sandrine Arnaud 1 Sylvain David 1 Viktoriia Gorbenko 2 Jean-Paul Barnes 3 Herve Boutry 3 Julien Duvernay 3 Mikael Casse 3 Yann Bogumilowicz 3 Nevine Rochas 3 Nicolas Chauvin 4 Xinyu Bao 5 Zhiyuan Ye 5 Jean-Baptiste Pin 5 Errol Sanchez 5 Thierry Baron 1

1CNRS Grenoble France2CNRS-LTM Grenoble France3CEA-LETI Grenoble France4INL Lyon France5Applied Materials Santa Clara United States

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9:00 AM - AA4.24
Material Characterization of Tantalum Oxide Resistive Memory Devices for Radiation Resistant Non-Volatile Memory

Joshua Holt 2 Karsten Beckmann 1 Sarah Lombardo 2 Jean Yang-Scharlotta 3 Nathaniel Cady 2

1SUNY Polytechnic Institute Albany United States2SUNY Polytechnic Institute Albany United States3Jet Propulsion Laboratory Pasadena United States

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9:00 AM - AA4.25
Air Stability of Two-Dimensional Transition Metal Dichalcogenide Surfaces

Santosh KC 1 Rafik Addou 1 Diego Barrera 1 2 Roberto C. Longo 1 Julia W. P. Hsu 1 Robert M. Wallace 1 Kyeongjae Cho 1

1Univ of Texas-Dallas Richardson United States2Centro de Investigacioacute;n en Materiales Avanzados, S.C. (CIMAV) Unidad Monterrey Mexico

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9:00 AM -
AA4.24 WITHDRAWN 3-11-15

9:00 AM -
AA4.07 WITHDRAWN 3-23-15

AA1: III-V Channels
Session Chairs
Paul McIntyre
Peide Ye
Tuesday AM, April 07, 2015
Moscone West, Level 2, Room 2005

9:15 AM - AA1.02
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels

Renjie Chen 1 Shadi A. Dayeh 1

1University of California, San Diego La Jolla United States

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9:30 AM - *AA1.03
Low-Frequent Noise and RTN on Near-Ballistic III-V GAA Nanowire MOSFETs

Peide Ye 1

1Purdue University West Lafayette United States

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10:00 AM - *AA1.04
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors

Jesus A. del Alamo 1

1MIT Cambridge United States

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10:30 AM - AA1.05
Efficacy of Ge Passivation with Metal-Interlayer-Semiconductor Structure on III-V FET Source/Drain Contact Resistance Reduction

Kim Seung-Hwan 1 Jeong-Kyu Kim 1 Gwang-Sik Kim 1 Chang-Hwan Choi 2 Hyun-Yong Yu 1

1Korea University Seoul Korea (the Republic of)2Hanyang University Seoul Korea (the Republic of)

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10:45 AM - AA1.06
Low Leakage and Trap State Densities of Extremely High-K/InGaAs Gate Stacks

Varistha Chobpattana 1 Evgeny Mikheev 1 Jack Zhang 1 Thomas E. Mates 1 Susanne Stemmer 1

1University of California Santa Barbara United States

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11:00 AM -
BREAK

11:30 AM - *AA1.07
Time-Resolved X-Ray Photoemission Spectroscopy of the III-V/Oxide Interface during the ALD Process

Rainer Timm 1

1Lund University Lund Sweden

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